1
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Malkoc O, Stano P, Loss D. Charge-Noise-Induced Dephasing in Silicon Hole-Spin Qubits. PHYSICAL REVIEW LETTERS 2022; 129:247701. [PMID: 36563265 DOI: 10.1103/physrevlett.129.247701] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/23/2022] [Revised: 09/27/2022] [Accepted: 11/09/2022] [Indexed: 06/17/2023]
Abstract
We investigate, theoretically, charge-noise-induced spin dephasing of a hole confined in a quasi-two-dimensional silicon quantum dot. Central to our treatment is accounting for higher-order corrections to the Luttinger Hamiltonian. Using experimentally reported parameters, we find that the new terms give rise to sweet spots for the hole-spin dephasing, which are sensitive to device details: dot size and asymmetry, growth direction, and applied magnetic and electric fields. Furthermore, we estimate that the dephasing time at the sweet spots is boosted by several orders of magnitude, up to on the order of milliseconds.
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Affiliation(s)
- Ognjen Malkoc
- RIKEN Center for Emergent Matter Science, Wako-shi, Saitama 351-0198, Japan
| | - Peter Stano
- RIKEN Center for Emergent Matter Science, Wako-shi, Saitama 351-0198, Japan
- Institute of Physics, Slovak Academy of Sciences, 845 11 Bratislava, Slovakia
| | - Daniel Loss
- RIKEN Center for Emergent Matter Science, Wako-shi, Saitama 351-0198, Japan
- RIKEN Center for Quantum Computing, Wako, Saitama 351-0198, Japan
- Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland
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2
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Bosco S, Scarlino P, Klinovaja J, Loss D. Fully Tunable Longitudinal Spin-Photon Interactions in Si and Ge Quantum Dots. PHYSICAL REVIEW LETTERS 2022; 129:066801. [PMID: 36018647 DOI: 10.1103/physrevlett.129.066801] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/31/2022] [Accepted: 07/06/2022] [Indexed: 06/15/2023]
Abstract
Spin qubits in silicon and germanium quantum dots are promising platforms for quantum computing, but entangling spin qubits over micrometer distances remains a critical challenge. Current prototypical architectures maximize transversal interactions between qubits and microwave resonators, where the spin state is flipped by nearly resonant photons. However, these interactions cause backaction on the qubit that yields unavoidable residual qubit-qubit couplings and significantly affects the gate fidelity. Strikingly, residual couplings vanish when spin-photon interactions are longitudinal and photons couple to the phase of the qubit. We show that large and tunable spin-photon interactions emerge naturally in state-of-the-art hole spin qubits and that they change from transversal to longitudinal depending on the magnetic field direction. We propose ways to electrically control and measure these interactions, as well as realistic protocols to implement fast high-fidelity two-qubit entangling gates. These protocols work also at high temperatures, paving the way toward the implementation of large-scale quantum processors.
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Affiliation(s)
- Stefano Bosco
- Department of Physics, University of Basel, Klingelbergstrasse 82, 4056 Basel, Switzerland
| | - Pasquale Scarlino
- Institute of Physics, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
| | - Jelena Klinovaja
- Department of Physics, University of Basel, Klingelbergstrasse 82, 4056 Basel, Switzerland
| | - Daniel Loss
- Department of Physics, University of Basel, Klingelbergstrasse 82, 4056 Basel, Switzerland
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3
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Chen J, Han W, Zhang Y, Zhang X, Ge Y, Guo Y, Yang F. Bias-dependent hole transport through a multi-channel silicon nanowire transistor with single-acceptor-induced quantum dots. NANOSCALE 2022; 14:11018-11027. [PMID: 35866357 DOI: 10.1039/d2nr02250h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Quantum transport in multi-channel silicon nanowire transistors presents enhanced data capacity and driving ability by overlapping current, which are essential for constructing quantum logic platforms. However, the overlapping behavior of the quantum transport through multi-channels remains elusive. Herein, we demonstrated bias-dependent hole transport spectroscopy from zero-dimensional (0D) to one-dimensional (1D) features in a lightly boron-doped multi-channel silicon nanowire transistor. The evolution of the initial 0D conductance peak splitting with source/drain bias voltages reveals the statistically distributed positions of single dopant atoms in multi-channels relative to the source or drain side. Two sets of 1D subbands are determined separately for heavy and light holes with different effective masses by measuring the positions of transconductance valleys, which have a negative shift with increasing bias voltage. Our results will benefit the practical utilization of silicon-based devices with atomic-level functionality in the field of quantum computation.
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Affiliation(s)
- Jundong Chen
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Weihua Han
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Yanbo Zhang
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Xiaodi Zhang
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Yandong Ge
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Yangyan Guo
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Fuhua Yang
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
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4
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4.2 K sensitivity-tunable radio frequency reflectometry of a physically defined p-channel silicon quantum dot. Sci Rep 2021; 11:20039. [PMID: 34625617 PMCID: PMC8501031 DOI: 10.1038/s41598-021-99560-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/07/2021] [Accepted: 09/27/2021] [Indexed: 11/30/2022] Open
Abstract
We demonstrate the measurement of p-channel silicon-on-insulator quantum dots at liquid helium temperatures by using a radio frequency (rf) reflectometry circuit comprising of two independently tunable GaAs varactors. This arrangement allows observing Coulomb diamonds at 4.2 K under nearly best matching condition and optimal signal-to-noise ratio. We also discuss the rf leakage induced by the presence of the large top gate in MOS nanostructures and its consequence on the efficiency of rf-reflectometry. These results open the way to fast and sensitive readout in multi-gate architectures, including multi qubit platforms.
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5
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Mu J, Huang S, Wang JY, Huang GY, Wang X, Xu HQ. Measurements of anisotropic g-factors for electrons in InSb nanowire quantum dots. NANOTECHNOLOGY 2021; 32:020002. [PMID: 32987368 DOI: 10.1088/1361-6528/abbc24] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We have measured the Zeeman splitting of quantum levels in few-electron quantum dots (QDs) formed in narrow bandgap InSb nanowires via the Schottky barriers at the contacts under application of different spatially orientated magnetic fields. The effective g-factor tensor extracted from the measurements is strongly anisotropic and level-dependent, which can be attributed to the presence of strong spin-orbit interaction (SOI) and asymmetric quantum confinement potentials in the QDs. We have demonstrated a successful determination of the principal values and the principal axis orientations of the g-factor tensors in an InSb nanowire QD by the measurements under rotations of a magnetic field in the three orthogonal planes. We also examine the magnetic field evolution of the excitation spectra in an InSb nanowire QD and extract a SOI strength of [Formula: see text] ∼ 180 μeV from an avoided level crossing between a ground state and its neighboring first excited state in the QD.
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Affiliation(s)
- Jingwei Mu
- Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and Department of Electronics, Peking University, Beijing 100871, People's Republic of China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People's Republic of China
| | - Shaoyun Huang
- Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and Department of Electronics, Peking University, Beijing 100871, People's Republic of China
| | - Ji-Yin Wang
- Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and Department of Electronics, Peking University, Beijing 100871, People's Republic of China
| | - Guang-Yao Huang
- Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and Department of Electronics, Peking University, Beijing 100871, People's Republic of China
| | - Xuming Wang
- Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and Department of Electronics, Peking University, Beijing 100871, People's Republic of China
| | - H Q Xu
- Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and Department of Electronics, Peking University, Beijing 100871, People's Republic of China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People's Republic of China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, People's Republic of China
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6
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Stein RM, Barcikowski ZS, Pookpanratana SJ, Pomeroy JM, Stewart MD. Alternatives to aluminum gates for silicon quantum devices: defects and strain. JOURNAL OF APPLIED PHYSICS 2021; 130:10.1063/5.0036520. [PMID: 36733463 PMCID: PMC9890375 DOI: 10.1063/5.0036520] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/05/2020] [Accepted: 02/16/2021] [Indexed: 06/13/2023]
Abstract
Gate-defined quantum dots (QD) benefit from the use of small grain size metals for gate materials because it aids in shrinking the device dimensions. However, it is not clear what differences arise with respect to process-induced defect densities and inhomogeneous strain. Here, we present measurements of fixed charge, Q f , interface trap density, D it , the intrinsic film stress, σ, and the coefficient of thermal expansion, α as a function of forming gas anneal temperature for Al, Ti/Pd, and Ti/Pt gates. We show D it is minimal at an anneal temperature of 350 °C for all materials but Ti/Pd and Ti/Pt have higher Q f and D it compared to Al. In addition, σ and α increase with anneal temperature for all three metals with α larger than the bulk value. These results indicate that there is a tradeoff between minimizing defects and minimizing the impact of strain in quantum device fabrication.
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Affiliation(s)
- Ryan M. Stein
- Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742, USA
| | - Z. S. Barcikowski
- Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742, USA
| | - S. J. Pookpanratana
- National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA
| | - J. M. Pomeroy
- National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA
| | - M. D. Stewart
- National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA
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7
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Sun Y, Dong T, Yu L, Xu J, Chen K. Planar Growth, Integration, and Applications of Semiconducting Nanowires. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1903945. [PMID: 31746050 DOI: 10.1002/adma.201903945] [Citation(s) in RCA: 19] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/21/2019] [Revised: 10/05/2019] [Indexed: 06/10/2023]
Abstract
Silicon and other inorganic semiconductor nanowires (NWs) have been extensively investigated in the last two decades for constructing high-performance nanoelectronics, sensors, and optoelectronics. For many of these applications, these tiny building blocks have to be integrated into the existing planar electronic platform, where precise location, orientation, and layout controls are indispensable. In the advent of More-than-Moore's era, there are also emerging demands for a programmable growth engineering of the geometry, composition, and line-shape of NWs on planar or out-of-plane 3D sidewall surfaces. Here, the critical technologies established for synthesis, transferring, and assembly of NWs upon planar surface are examined; then, the recent progress of in-plane growth of horizontal NWs directly upon crystalline or patterned substrates, constrained by using nanochannels, an epitaxial interface, or amorphous thin film precursors is discussed. Finally, the unique capabilities of planar growth of NWs in achieving precise guided growth control, programmable geometry, composition, and line-shape engineering are reviewed, followed by their latest device applications in building high-performance field-effect transistors, photodetectors, stretchable electronics, and 3D stacked-channel integration.
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Affiliation(s)
- Ying Sun
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Taige Dong
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Linwei Yu
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Jun Xu
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Kunji Chen
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
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8
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Abstract
Semiconductor nanowires have attracted extensive interest as one of the best-defined classes of nanoscale building blocks for the bottom-up assembly of functional electronic and optoelectronic devices over the past two decades. The article provides a comprehensive review of the continuing efforts in exploring semiconductor nanowires for the assembly of functional nanoscale electronics and macroelectronics. Specifically, we start with a brief overview of the synthetic control of various semiconductor nanowires and nanowire heterostructures with precisely controlled physical dimension, chemical composition, heterostructure interface, and electronic properties to define the material foundation for nanowire electronics. We then summarize a series of assembly strategies developed for creating well-ordered nanowire arrays with controlled spatial position, orientation, and density, which are essential for constructing increasingly complex electronic devices and circuits from synthetic semiconductor nanowires. Next, we review the fundamental electronic properties and various single nanowire transistor concepts. Combining the designable electronic properties and controllable assembly approaches, we then discuss a series of nanoscale devices and integrated circuits assembled from nanowire building blocks, as well as a unique design of solution-processable nanowire thin-film transistors for high-performance large-area flexible electronics. Last, we conclude with a brief perspective on the standing challenges and future opportunities.
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Affiliation(s)
- Chuancheng Jia
- Department of Chemistry and Biochemistry , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Zhaoyang Lin
- Department of Chemistry and Biochemistry , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Yu Huang
- Department of Materials Science and Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States.,California NanoSystems Institute , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry , University of California, Los Angeles , Los Angeles , California 90095 , United States.,California NanoSystems Institute , University of California, Los Angeles , Los Angeles , California 90095 , United States
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9
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van der Heijden J, Kobayashi T, House MG, Salfi J, Barraud S, Laviéville R, Simmons MY, Rogge S. Readout and control of the spin-orbit states of two coupled acceptor atoms in a silicon transistor. SCIENCE ADVANCES 2018; 4:eaat9199. [PMID: 30539142 PMCID: PMC6286166 DOI: 10.1126/sciadv.aat9199] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/18/2018] [Accepted: 11/07/2018] [Indexed: 06/09/2023]
Abstract
Coupling spin qubits to electric fields is attractive to simplify qubit manipulation and couple qubits over long distances. Electron spins in silicon offer long lifetimes, but their weak spin-orbit interaction makes electrical coupling challenging. Hole spins bound to acceptor dopants, spin-orbit-coupled J = 3/2 systems similar to Si vacancies in SiC and single Co dopants, are an electrically active spin system in silicon. However, J = 3/2 systems are much less studied than S = 1/2 electrons, and spin readout has not yet been demonstrated for acceptors in silicon. Here, we study acceptor hole spin dynamics by dispersive readout of single-hole tunneling between two coupled acceptors in a nanowire transistor. We identify m J = ±1/2 and m J = ±3/2 levels, and we use a magnetic field to overcome the initial heavy-light hole splitting and to tune the J = 3/2 energy spectrum. We find regimes of spin-like (+3/2 to -3/2) and charge-like (±1/2 to ±3/2) relaxations, separated by a regime of enhanced relaxation induced by mixing of light and heavy holes. The demonstrated control over the energy level ordering and hybridization are new tools in the J = 3/2 system that are crucial to optimize single-atom spin lifetime and electrical coupling.
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Affiliation(s)
- Joost van der Heijden
- School of Physics and Australian Centre of Excellence for Quantum Computation and Communication Technology, UNSW, Sydney, Australia
| | - Takashi Kobayashi
- School of Physics and Australian Centre of Excellence for Quantum Computation and Communication Technology, UNSW, Sydney, Australia
| | - Matthew G. House
- School of Physics and Australian Centre of Excellence for Quantum Computation and Communication Technology, UNSW, Sydney, Australia
| | - Joe Salfi
- School of Physics and Australian Centre of Excellence for Quantum Computation and Communication Technology, UNSW, Sydney, Australia
| | - Sylvain Barraud
- University of Grenoble Alpes and CEA, LETI, MINATEC, 38000 Grenoble, France
| | - Romain Laviéville
- University of Grenoble Alpes and CEA, LETI, MINATEC, 38000 Grenoble, France
| | - Michelle Y. Simmons
- School of Physics and Australian Centre of Excellence for Quantum Computation and Communication Technology, UNSW, Sydney, Australia
| | - Sven Rogge
- School of Physics and Australian Centre of Excellence for Quantum Computation and Communication Technology, UNSW, Sydney, Australia
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10
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Seo M, Roulleau P, Roche P, Glattli DC, Sanquer M, Jehl X, Hutin L, Barraud S, Parmentier FD. Strongly Correlated Charge Transport in Silicon Metal-Oxide-Semiconductor Field-Effect Transistor Quantum Dots. PHYSICAL REVIEW LETTERS 2018; 121:027701. [PMID: 30085716 DOI: 10.1103/physrevlett.121.027701] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/22/2018] [Indexed: 06/08/2023]
Abstract
Quantum shot noise probes the dynamics of charge transfers through a quantum conductor, reflecting whether quasiparticles flow across the conductor in a steady stream, or in syncopated bursts. We have performed high-sensitivity shot noise measurements in a quantum dot obtained in a silicon metal-oxide-semiconductor field-effect transistor. The quality of our device allows us to precisely associate the different transport regimes and their statistics with the internal state of the quantum dot. In particular, we report on large current fluctuations in the inelastic cotunneling regime, corresponding to different highly correlated, non-Markovian charge transfer processes. We have also observed unusually large current fluctuations at low energy in the elastic cotunneling regime, the origin of which remains to be fully investigated.
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Affiliation(s)
- M Seo
- SPEC, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-sur-Yvette cedex, France
| | - P Roulleau
- SPEC, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-sur-Yvette cedex, France
| | - P Roche
- SPEC, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-sur-Yvette cedex, France
| | - D C Glattli
- SPEC, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-sur-Yvette cedex, France
| | - M Sanquer
- Université Grenoble Alpes, CEA, INAC-PHELIQS, 38000 Grenoble, France
| | - X Jehl
- Université Grenoble Alpes, CEA, INAC-PHELIQS, 38000 Grenoble, France
| | - L Hutin
- CEA, LETI, Minatec Campus, 38000 Grenoble, France
| | - S Barraud
- CEA, LETI, Minatec Campus, 38000 Grenoble, France
| | - F D Parmentier
- SPEC, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-sur-Yvette cedex, France
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11
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Bogan A, Studenikin S, Korkusinski M, Gaudreau L, Zawadzki P, Sachrajda AS, Tracy L, Reno J, Hargett T. Landau-Zener-Stückelberg-Majorana Interferometry of a Single Hole. PHYSICAL REVIEW LETTERS 2018; 120:207701. [PMID: 29864336 DOI: 10.1103/physrevlett.120.207701] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/03/2017] [Indexed: 06/08/2023]
Abstract
We perform Landau-Zener-Stückelberg-Majorana (LZSM) spectroscopy on a system with strong spin-orbit interaction (SOI), realized as a single hole confined in a gated double quantum dot. Analogous to electron systems, at a magnetic field B=0 and high modulation frequencies, we observe photon-assisted tunneling between dots, which smoothly evolves into the typical LZSM funnel-shaped interference pattern as the frequency is decreased. In contrast to electrons, the SOI enables an additional, efficient spin-flip interdot tunneling channel, introducing a distinct interference pattern at finite B. Magnetotransport spectra at low-frequency LZSM driving show the two channels to be equally coherent. High-frequency LZSM driving reveals complex photon-assisted tunneling pathways, both spin conserving and spin flip, which form closed loops at critical magnetic fields. In one such loop, an arbitrary hole spin state is inverted, opening the way toward its all-electrical manipulation.
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Affiliation(s)
- Alex Bogan
- Emerging Technology Division, National Research Council, Ottawa, Canada K1A0R6
| | - Sergei Studenikin
- Emerging Technology Division, National Research Council, Ottawa, Canada K1A0R6
| | - Marek Korkusinski
- Emerging Technology Division, National Research Council, Ottawa, Canada K1A0R6
| | - Louis Gaudreau
- Emerging Technology Division, National Research Council, Ottawa, Canada K1A0R6
| | - Piotr Zawadzki
- Emerging Technology Division, National Research Council, Ottawa, Canada K1A0R6
| | - Andy S Sachrajda
- Emerging Technology Division, National Research Council, Ottawa, Canada K1A0R6
| | - Lisa Tracy
- Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
| | - John Reno
- Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
| | - Terry Hargett
- Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
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12
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Shiri D, Verma A, Nekovei R, Isacsson A, Selvakumar CR, Anantram MP. Gunn-Hilsum Effect in Mechanically Strained Silicon Nanowires: Tunable Negative Differential Resistance. Sci Rep 2018; 8:6273. [PMID: 29674663 PMCID: PMC5908846 DOI: 10.1038/s41598-018-24387-y] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/06/2017] [Accepted: 03/21/2018] [Indexed: 11/09/2022] Open
Abstract
Gunn (or Gunn-Hilsum) Effect and its associated negative differential resistivity (NDR) emanates from transfer of electrons between two different energy subbands. This effect was observed in semiconductors like GaAs which has a direct bandgap of very low effective mass and an indirect subband of high effective mass which lies ~300 meV above the former. In contrast to GaAs, bulk silicon has a very high energy spacing (~1 eV) which renders the initiation of transfer-induced NDR unobservable. Using Density Functional Theory (DFT), semi-empirical 10 orbital (sp3d5s*) Tight Binding and Ensemble Monte Carlo (EMC) methods we show for the first time that (a) Gunn Effect can be induced in silicon nanowires (SiNW) with diameters of 3.1 nm under +3% strain and an electric field of 5000 V/cm, (b) the onset of NDR in the I-V characteristics is reversibly adjustable by strain and (c) strain modulates the resistivity by a factor 2.3 for SiNWs of normal I-V characteristics i.e. those without NDR. These observations are promising for applications of SiNWs in electromechanical sensors and adjustable microwave oscillators. It is noteworthy that the observed NDC is different in principle from Esaki-Diode and Resonant Tunneling Diodes (RTD) in which NDR originates from tunneling effect.
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Affiliation(s)
- Daryoush Shiri
- Department of Physics, Chalmers University of Technology, SE-41296, Göteborg, Sweden.
| | - Amit Verma
- Department of Electrical Engineering and Computer Science, Texas A&M University-Kingsville, Kingsville, Texas, 78363, USA
| | - Reza Nekovei
- Department of Electrical Engineering and Computer Science, Texas A&M University-Kingsville, Kingsville, Texas, 78363, USA
| | - Andreas Isacsson
- Department of Physics, Chalmers University of Technology, SE-41296, Göteborg, Sweden
| | - C R Selvakumar
- Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario, N2L 3G1, Canada
| | - M P Anantram
- Department of Electrical Engineering, University of Washington, Seattle, Washington, 98195-2500, USA
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13
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Crippa A, Maurand R, Bourdet L, Kotekar-Patil D, Amisse A, Jehl X, Sanquer M, Laviéville R, Bohuslavskyi H, Hutin L, Barraud S, Vinet M, Niquet YM, De Franceschi S. Electrical Spin Driving by g-Matrix Modulation in Spin-Orbit Qubits. PHYSICAL REVIEW LETTERS 2018; 120:137702. [PMID: 29694195 DOI: 10.1103/physrevlett.120.137702] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/23/2017] [Indexed: 06/08/2023]
Abstract
In a semiconductor spin qubit with sizable spin-orbit coupling, coherent spin rotations can be driven by a resonant gate-voltage modulation. Recently, we have exploited this opportunity in the experimental demonstration of a hole spin qubit in a silicon device. Here we investigate the underlying physical mechanisms by measuring the full angular dependence of the Rabi frequency, as well as the gate-voltage dependence and anisotropy of the hole g factor. We show that a g-matrix formalism can simultaneously capture and discriminate the contributions of two mechanisms so far independently discussed in the literature: one associated with the modulation of the g factor, and measurable by Zeeman energy spectroscopy, the other not. Our approach has a general validity and can be applied to the analysis of other types of spin-orbit qubits.
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Affiliation(s)
- Alessandro Crippa
- Université Grenoble Alpes and CEA INAC-PHELIQS, F-38000 Grenoble, France
| | - Romain Maurand
- Université Grenoble Alpes and CEA INAC-PHELIQS, F-38000 Grenoble, France
| | - Léo Bourdet
- Université Grenoble Alpes and CEA INAC-MEM, F-38000 Grenoble, France
| | | | - Anthony Amisse
- Université Grenoble Alpes and CEA INAC-PHELIQS, F-38000 Grenoble, France
| | - Xavier Jehl
- Université Grenoble Alpes and CEA INAC-PHELIQS, F-38000 Grenoble, France
| | - Marc Sanquer
- Université Grenoble Alpes and CEA INAC-PHELIQS, F-38000 Grenoble, France
| | - Romain Laviéville
- Université Grenoble Alpes and CEA LETI, MINATEC campus, F-38000 Grenoble, France
| | - Heorhii Bohuslavskyi
- Université Grenoble Alpes and CEA INAC-PHELIQS, F-38000 Grenoble, France
- Université Grenoble Alpes and CEA LETI, MINATEC campus, F-38000 Grenoble, France
| | - Louis Hutin
- Université Grenoble Alpes and CEA LETI, MINATEC campus, F-38000 Grenoble, France
| | - Sylvain Barraud
- Université Grenoble Alpes and CEA LETI, MINATEC campus, F-38000 Grenoble, France
| | - Maud Vinet
- Université Grenoble Alpes and CEA LETI, MINATEC campus, F-38000 Grenoble, France
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14
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Chiodi F, Bayliss SL, Barast L, Débarre D, Bouchiat H, Friend RH, Chepelianskii AD. Room temperature magneto-optic effect in silicon light-emitting diodes. Nat Commun 2018; 9:398. [PMID: 29374170 PMCID: PMC5785965 DOI: 10.1038/s41467-017-02804-6] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/08/2017] [Accepted: 12/28/2017] [Indexed: 12/04/2022] Open
Abstract
In weakly spin-orbit coupled materials, the spin-selective nature of recombination can give rise to large magnetic-field effects, e.g. on the electro-luminescence of molecular semiconductors. Although silicon has weak spin-orbit coupling, observing spin-dependent recombination through magneto-electroluminescence is challenging: silicon's indirect band-gap causes an inefficient emission and it is difficult to separate spin-dependent phenomena from classical magneto-resistance effects. Here we overcome these challenges and measure magneto-electroluminescence in silicon light-emitting diodes fabricated via gas immersion laser doping. These devices allow us to achieve efficient emission while retaining a well-defined geometry, thus suppressing classical magnetoresistance effects to a few percent. We find that electroluminescence can be enhanced by up to 300% near room temperature in a seven Tesla magnetic field, showing that the control of the spin degree of freedom can have a strong impact on the efficiency of silicon LEDs.
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Affiliation(s)
- F Chiodi
- Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Université Paris-Saclay, C2N-Orsay, Orsay, 91405, France
| | - S L Bayliss
- Laboratoire de Physique des solides, CNRS, Univ. Paris-Sud, Université Paris-Saclay, LPS-Orsay, Orsay, 91405, France
- Cavendish Laboratory, University of Cambridge, J. J. Thomson Avenue, Cambridge, CB3 OHE, UK
| | - L Barast
- Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Université Paris-Saclay, C2N-Orsay, Orsay, 91405, France
- Laboratoire de Physique des solides, CNRS, Univ. Paris-Sud, Université Paris-Saclay, LPS-Orsay, Orsay, 91405, France
| | - D Débarre
- Laboratoire de Physique des solides, CNRS, Univ. Paris-Sud, Université Paris-Saclay, LPS-Orsay, Orsay, 91405, France
| | - H Bouchiat
- Laboratoire de Physique des solides, CNRS, Univ. Paris-Sud, Université Paris-Saclay, LPS-Orsay, Orsay, 91405, France
| | - R H Friend
- Cavendish Laboratory, University of Cambridge, J. J. Thomson Avenue, Cambridge, CB3 OHE, UK
| | - A D Chepelianskii
- Laboratoire de Physique des solides, CNRS, Univ. Paris-Sud, Université Paris-Saclay, LPS-Orsay, Orsay, 91405, France.
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15
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Bogan A, Studenikin SA, Korkusinski M, Aers GC, Gaudreau L, Zawadzki P, Sachrajda AS, Tracy LA, Reno JL, Hargett TW. Consequences of Spin-Orbit Coupling at the Single Hole Level: Spin-Flip Tunneling and the Anisotropic g Factor. PHYSICAL REVIEW LETTERS 2017; 118:167701. [PMID: 28474907 DOI: 10.1103/physrevlett.118.167701] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/01/2016] [Indexed: 06/07/2023]
Abstract
Hole transport experiments were performed on a gated double quantum dot device defined in a p-GaAs/AlGaAs heterostructure with a single hole occupancy in each dot. The charging diagram of the device was mapped out using charge detection confirming that the single hole limit is reached. In that limit, a detailed study of the two-hole spin system was performed using high bias magnetotransport spectroscopy. In contrast to electron systems, the hole spin was found not to be conserved during interdot resonant tunneling. This allows one to fully map out the two-hole energy spectrum as a function of the magnitude and the direction of the external magnetic field. The heavy-hole g factor was extracted and shown to be strongly anisotropic, with a value of 1.45 for a perpendicular field and close to zero for an in-plane field as required for hybridizing schemes between spin and photonic quantum platforms.
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Affiliation(s)
- A Bogan
- Emerging Technology Division, National Research Council, Ottawa, Canada K1A0R6
| | - S A Studenikin
- Emerging Technology Division, National Research Council, Ottawa, Canada K1A0R6
| | - M Korkusinski
- Emerging Technology Division, National Research Council, Ottawa, Canada K1A0R6
| | - G C Aers
- Emerging Technology Division, National Research Council, Ottawa, Canada K1A0R6
| | - L Gaudreau
- Emerging Technology Division, National Research Council, Ottawa, Canada K1A0R6
| | - P Zawadzki
- Emerging Technology Division, National Research Council, Ottawa, Canada K1A0R6
| | - A S Sachrajda
- Emerging Technology Division, National Research Council, Ottawa, Canada K1A0R6
| | - L A Tracy
- Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
| | - J L Reno
- Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
| | - T W Hargett
- Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
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16
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Maurand R, Jehl X, Kotekar-Patil D, Corna A, Bohuslavskyi H, Laviéville R, Hutin L, Barraud S, Vinet M, Sanquer M, De Franceschi S. A CMOS silicon spin qubit. Nat Commun 2016; 7:13575. [PMID: 27882926 PMCID: PMC5123048 DOI: 10.1038/ncomms13575] [Citation(s) in RCA: 313] [Impact Index Per Article: 39.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/28/2016] [Accepted: 10/14/2016] [Indexed: 12/11/2022] Open
Abstract
Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot encoding a hole spin qubit, the second one a quantum dot used for the qubit read-out. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. The demonstrated qubit functionality in a basic transistor-like device constitutes a promising step towards the elaboration of scalable spin qubit geometries in a readily exploitable CMOS platform.
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Affiliation(s)
- R. Maurand
- University Grenoble Alpes, F-38000 Grenoble, France
- CEA, INAC-PHELIQS, F-38000 Grenoble, France
| | - X. Jehl
- University Grenoble Alpes, F-38000 Grenoble, France
- CEA, INAC-PHELIQS, F-38000 Grenoble, France
| | - D. Kotekar-Patil
- University Grenoble Alpes, F-38000 Grenoble, France
- CEA, INAC-PHELIQS, F-38000 Grenoble, France
| | - A. Corna
- University Grenoble Alpes, F-38000 Grenoble, France
- CEA, INAC-PHELIQS, F-38000 Grenoble, France
| | - H. Bohuslavskyi
- University Grenoble Alpes, F-38000 Grenoble, France
- CEA, INAC-PHELIQS, F-38000 Grenoble, France
| | - R. Laviéville
- University Grenoble Alpes, F-38000 Grenoble, France
- CEA, LETI, MINATEC Campus, F-38054 Grenoble, France
| | - L. Hutin
- University Grenoble Alpes, F-38000 Grenoble, France
- CEA, LETI, MINATEC Campus, F-38054 Grenoble, France
| | - S. Barraud
- University Grenoble Alpes, F-38000 Grenoble, France
- CEA, LETI, MINATEC Campus, F-38054 Grenoble, France
| | - M. Vinet
- University Grenoble Alpes, F-38000 Grenoble, France
- CEA, LETI, MINATEC Campus, F-38054 Grenoble, France
| | - M. Sanquer
- University Grenoble Alpes, F-38000 Grenoble, France
- CEA, INAC-PHELIQS, F-38000 Grenoble, France
| | - S. De Franceschi
- University Grenoble Alpes, F-38000 Grenoble, France
- CEA, INAC-PHELIQS, F-38000 Grenoble, France
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17
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Salfi J, Mol JA, Culcer D, Rogge S. Charge-Insensitive Single-Atom Spin-Orbit Qubit in Silicon. PHYSICAL REVIEW LETTERS 2016; 116:246801. [PMID: 27367400 DOI: 10.1103/physrevlett.116.246801] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/19/2015] [Indexed: 06/06/2023]
Abstract
High fidelity entanglement of an on-chip array of spin qubits poses many challenges. Spin-orbit coupling (SOC) can ease some of these challenges by enabling long-ranged entanglement via electric dipole-dipole interactions, microwave photons, or phonons. However, SOC exposes conventional spin qubits to decoherence from electrical noise. Here, we propose an acceptor-based spin-orbit qubit in silicon offering long-range entanglement at a sweet spot where the qubit is protected from electrical noise. The qubit relies on quadrupolar SOC with the interface and gate potentials. As required for surface codes, 10^{5} electrically mediated single-qubit and 10^{4} dipole-dipole mediated two-qubit gates are possible in the predicted spin lifetime. Moreover, circuit quantum electrodynamics with single spins is feasible, including dispersive readout, cavity-mediated entanglement, and spin-photon entanglement. An industrially relevant silicon-based platform is employed.
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Affiliation(s)
- Joe Salfi
- School of Physics, The University of New South Wales, Sydney, New South Wales 2052, Australia
- Centre for Quantum Computation and Communication Technology, The University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Jan A Mol
- School of Physics, The University of New South Wales, Sydney, New South Wales 2052, Australia
- Centre for Quantum Computation and Communication Technology, The University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Dimitrie Culcer
- School of Physics, The University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Sven Rogge
- School of Physics, The University of New South Wales, Sydney, New South Wales 2052, Australia
- Centre for Quantum Computation and Communication Technology, The University of New South Wales, Sydney, New South Wales 2052, Australia
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18
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Salfi J, Tong M, Rogge S, Culcer D. Quantum computing with acceptor spins in silicon. NANOTECHNOLOGY 2016; 27:244001. [PMID: 27171901 DOI: 10.1088/0957-4484/27/24/244001] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
The states of a boron acceptor near a Si/SiO2 interface, which bind two low-energy Kramers pairs, have exceptional properties for encoding quantum information and, with the aid of strain, both heavy hole and light hole-based spin qubits can be designed. Whereas a light-hole spin qubit was introduced recently (arXiv:1508.04259), here we present analytical and numerical results proving that a heavy-hole spin qubit can be reliably initialised, rotated and entangled by electrical means alone. This is due to strong Rashba-like spin-orbit interaction terms enabled by the interface inversion asymmetry. Single qubit rotations rely on electric-dipole spin resonance (EDSR), which is strongly enhanced by interface-induced spin-orbit terms. Entanglement can be accomplished by Coulomb exchange, coupling to a resonator, or spin-orbit induced dipole-dipole interactions. By analysing the qubit sensitivity to charge noise, we demonstrate that interface-induced spin-orbit terms are responsible for sweet spots in the dephasing time [Formula: see text] as a function of the top gate electric field, which are close to maxima in the EDSR strength, where the EDSR gate has high fidelity. We show that both qubits can be described using the same starting Hamiltonian, and by comparing their properties we show that the complex interplay of bulk and interface-induced spin-orbit terms allows a high degree of electrical control and makes acceptors potential candidates for scalable quantum computation in Si.
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Affiliation(s)
- Joe Salfi
- School of Physics, The University of New South Wales, Sydney 2052, Australia
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