Lead Telluride Quantum Dot Solar Cells Displaying External Quantum Efficiencies Exceeding 120%

Indeno[3,2-b]carbazole-Based Small Molecule Layer Enables Optimized Carrier Transport for PbS Quantum Dot NIR Photodetectors

Colloidal quantum dots (CQDs) have garnered considerable attention for photodetectors (PDs), attributable to exceptional photoelectric properties and ease solution-based processing. However, the prevalent use of 1,2-ethanedithiol (EDT) as a hole transport layer (HTL) has limitations, such as energy level discrepancies, requisite oxidation, and intricate multilayer assembly. Organic p-type materials, lauded for their superior attributes and synthetic versatility, are now stepping forward as viable substitutes for conventional EDT HTLs. In this work, we introduced an organic HTL derived from indolo[3,2-b]carbazole, named ZL004, leading to a marked improvement in carrier generation and collection, facilitated by the optimized band alignment and enhanced interfacial charge dynamics. The ZL004-based PDs exhibit a photoresponsivity of 0.45 A/W, a noise current of 1.8 × 10-11 A Hz-0.5, a specific detectivity of 4.6 × 109 Jones, and an expansive linear dynamic range of 107 dB─surpassing EDT-based devices across the board, demonstrating the extraordinary property of organic p-type materials for CQD-based PDs.

Organoborane Se and Te Precursors for Controlled Modulation of Reactivity in Nanomaterial Synthesis

To exploit the distinctive optoelectrical properties of nanomaterials, precise control over the size, morphology, and interface structure is essential. Achieving a controlled synthesis demands precursors with tailored reactivity and optimal reaction temperatures. Here, we introduce organoborane-based selenium and tellurium precursors borabicyclononane-selenol (BBN-SeH) and tellurol (BBN-TeH). The reactivity of these precursors can be modified by commercially available additives, covering a wide range of intermediate reactivity and filling significant reactivity gaps in existing options. By allowing systematic adjustment of growth conditions, they achieve the controlled growth of quantum dots of various sizes and materials. Operating via a surface-assisted conversion mechanism, these precursors rely on surface coordination for activation and undergo quantitative deposition on coordinating surfaces. These properties allow precise control over the radial distribution and density of different chalcogenide atoms within the nanoparticles. Diborabicyclononanyl selane ((BBN)2Se), an intermediate from the BBN-SeH synthesis, can also serve as a selenium precursor. While BBN-SeH suppresses nucleation, (BBN)2Se exhibits efficient nucleation under specific conditions. By leveraging these distinct activation behaviors, we achieved a controlled synthesis of thermally stable nanoplates with different thicknesses. This study not only bridges critical reactivity gaps but also provides a systematic methodology for precise nanomaterial synthesis.

A review of toxicity assessment procedures of solar photovoltaic modules

Environmental management of solar photovoltaic (PV) modules is attracting attention as a growing number of field-operated PV modules approach end of life (EoL). PV modules may contain small amounts of toxic metals, and the procedures for assessing and regulating the toxic metal content and release of such materials at EoL differ widely across nations. This paper provides an overview of the metal composition of PV modules and common procedures for toxicity assessment through extensive research and review of technical literature and legislative documents. This review focuses on three primary aspects: first, it explores the distribution of toxic elements within current and emerging PV module designs, with a specific focus on obtaining representative samples for proportional toxicity testing within different module laminate areas. Second, it examines a sampling standard and the diverse toxicity testing methods and regulations employed in various regions, encompassing standards like the Environmental Protection Agency (EPA) Test Method 1311 (Toxicity Characteristic Leaching Procedure, TCLP) in the U.S., Restriction of Hazardous Substances (RoHS) in Europe, and the Waste Extraction Test (WET) in California. Third, the review examines the sources of variability in toxicity testing outcomes, including techniques for securing homogeneous samples from non-uniform PV modules, selecting particle sizes representative of landfill conditions in extracted samples, determining appropriate leachate characteristics such as leaching agents and pH levels, and considering factors like test duration and temperatures. In summary, this review summarizes relevant regulations and offers a comprehensive overview of the strengths and limitations associated with several toxicity assessment procedures currently in practice.

Phase-Change Memory from Molecular Tellurides

Phase-change memory (PCM) is an emerging memory technology based on the resistance contrast between the crystalline and amorphous states of a material. Further development and realization of PCM as a mainstream memory technology rely on innovative materials and inexpensive fabrication methods. Here, we propose a generalizable and scalable solution-processing approach to synthesize phase-change telluride inks in order to meet demands for high-throughput material screening, increased energy efficiency, and advanced device architectures. Bulk tellurides, such as Sb2Te3, GeTe, Sc2Te3, and TiTe2, are dissolved and purified to obtain inks of molecular metal telluride complexes. This allowed us to unlock a wide range of solution-processed ternary tellurides by the simple mixing of binary inks. We demonstrate accurate and quantitative composition control, including prototype materials (Ge-Sb-Te) and emerging rare-earth-metal telluride-doped materials (Sc-Sb-Te). Spin-coating and annealing convert ink formulations into high-quality, phase-pure telluride films with preferred orientation along the (00l) direction. Deposition engineering of liquid tellurides enables thickness-tunable films, infilling of nanoscale vias, and film preparation on flexible substrates. Finally, we demonstrate cyclable and non-volatile prototype memory devices, achieving performance indicators such as resistance contrast and low reset energy on par with state-of-the-art sputtered PCM layers.

Slow Auger Recombination in Ag2Se Colloidal Quantum Dots

Efficient Auger recombination (AR) presents a significant challenge for the advancement of colloidal quantum dot (QD)-based devices involving multiexcitons. Here, the AR dynamics of near-infrared Ag2Se QDs were studied through transient absorption experiments. As the QD radius increases from 0.9 to 2.5 nm, the biexciton lifetime (τ2) of Ag2Se QDs increases from 35 to 736 ps, which is approximately 10 times longer than that of comparable-sized CdSe and PbSe QDs. A qualitative analysis based on observables indicates that the slow Auger rate is primarily attributed to the low density of the final states. The biexciton lifetime and triexciton lifetime (τ3) of Ag2Se QDs follow R3 and R2.6 dependence, respectively. Moreover, the ratio of τ2/τ3 is ∼2.3-3.2, which is markedly lower than the value expected from statistical scaling (4.5). These findings suggest that environmentally friendly Ag2Se QDs can serve as excellent candidates for low-threshold lasers and third-generation photovoltaics utilizing carrier multiplication.

Spin-exchange carrier multiplication in manganese-doped colloidal quantum dots

Carrier multiplication is a process whereby a kinetic energy of a carrier relaxes via generation of additional electron-hole pairs (excitons). This effect has been extensively studied in the context of advanced photoconversion as it could boost the yield of generated excitons. Carrier multiplication is driven by carrier-carrier interactions that lead to excitation of a valence-band electron to the conduction band. Normally, the rate of phonon-assisted relaxation exceeds that of Coulombic collisions, which limits the carrier multiplication yield. Here we show that this limitation can be overcome by exploiting not 'direct' but 'spin-exchange' Coulomb interactions in manganese-doped core/shell PbSe/CdSe quantum dots. In these structures, carrier multiplication occurs via two spin-exchange steps. First, an exciton generated in the CdSe shell is rapidly transferred to a Mn dopant. Then, the excited Mn ion undergoes spin-flip relaxation via a spin-conserving pathway, which creates two excitons in the PbSe core. Due to the extremely fast, subpicosecond timescales of spin-exchange interactions, the Mn-doped quantum dots exhibit an up-to-threefold enhancement of the multiexciton yield versus the undoped samples, which points towards the considerable potential of spin-exchange carrier multiplication in advanced photoconversion.

Doping Colloidal Quantum Dot Materials and Devices for Photovoltaics

Colloidal semiconductor nanocrystals have generated tremendous interest because of their solution processability and robust tunability. Among such nanocrystals, the colloidal quantum dot (CQD) draws the most attention for its well-known quantum size effects. In the last decade, applications of CQDs have been booming in electronics and optoelectronics, especially in photovoltaics. Electronically doped semiconductors are critical in the fabrication of solar cells, because carefully designed band structures are able to promote efficient charge extraction. Unlike conventional semiconductors, diffusion and ion implantation technologies are not suitable for doping CQDs. Therefore, researchers have creatively developed alternative doping methods for CQD materials and devices. In order to provide a state-of-the-art summary and comprehensive understanding to this research community, we focused on various doping techniques and their applications for photovoltaics and demystify them from different perspectives. By analyzing two classes of CQDs, lead chalcogenide CQDs and perovskite CQDs, we compared different working scenarios of each technique, summarized the development in this field, and raised our own future perspectives.

Surface Chemistry Engineering of Perovskite Quantum Dots: Strategies, Applications, and Perspectives

The presence of surface ligands not only plays a key role in keeping the colloidal integrity and non-defective surface of metal halide perovskite quantum dots (PQDs), but also serves as a knob to tune their optoelectronic properties for a variety of exciting applications including solar cells and light-emitting diodes. However, these indispensable surface ligands may also deteriorate the stability and key properties of PQDs due to their highly dynamic binding and insulating nature. To address these issues, a number of innovative surface chemistry engineering approaches have been developed in the past few years. Based on an in-depth fundamental understanding of the surface atomistic structure and surface defect formation mechanism in the tiny nanoparticles, a critical overview focusing on the surface chemistry engineering of PQDs including advanced colloidal synthesis, in-situ surface passivation, and solution-phase/solid-state ligand exchange is presented, after which their unprecedented achievements in photovoltaics and other optoelectronics are presented. The practical hurdles and future directions are critically discussed to inspire more rational design of PQD surface chemistry toward practical applications.

Multiple exciton generation in isolated and interacting silicon nanocrystals

An important challenge in the field of renewable energy is the development of novel nanostructured solar cell devices which implement low-dimensional materials to overcome the limits of traditional photovoltaic systems. For optimal energy conversion in photovoltaic devices, one important requirement is that the full energy of the solar spectrum is effectively used. In this context, the possibility of exploiting features and functionalities induced by the reduced dimensionality of the nanocrystalline phase, in particular by the quantum confinement of the electronic density, can lead to a better use of the carrier excess energy and thus to an increment of the thermodynamic conversion efficiency of the system. Carrier multiplication, i.e. the generation of multiple electron-hole pairs after absorption of one single high-energy photon (with energy at least twice the energy gap of the system), can be exploited to maximize cell performance, promoting a net reduction of loss mechanisms. Over the past fifteen years, carrier multiplication has been recorded in a large variety of semiconductor nanocrystals and other nanostructures. Owing to the role of silicon in solar cell applications, the mission of this review is to summarize the progress in this fascinating research field considering carrier multiplication in Si-based low-dimensional systems, in particular Si nanocrystals, both from the experimental and theoretical point of view, with special attention given to the results obtained by ab initio calculations.

Open-Circuit Voltage Loss in Lead Chalcogenide Quantum Dot Solar Cells

Lead chalcogenide colloidal quantum dot solar cells (CQDSCs) have received considerable attention due to their broad and tunable absorption and high stability. Presently, lead chalcogenide CQDSC has achieved a power conversion efficiency of ≈14%. However, the state-of-the-art lead chalcogenide CQDSC still has an open-circuit voltage (V_oc ) loss of ≈0.45 V, which is significantly higher than those of c-Si and perovskite solar cells. Such high V_oc loss severely limits the performance improvement and commercialization of lead chalcogenide CQDSCs. In this review, the V_oc loss is first analyzed via detailed balance theory and the origin of V_oc loss from both solar absorber and interface is summarized. Subsequently, various strategies for improving the V_oc from the solar absorber, including the passivation strategies during the synthesis and ligand exchange are overviewed. The great impact of the ligand exchange process on CQD passivation is highlighted and the corresponding strategies to further reduce the V_oc loss are summarized. Finally, various strategies are discussed to reduce interface V_oc loss from charge transport layers. More importantly, the great potential of achieving performance breakthroughs via various organic hole transport layers is highlighted and the existing challenges toward commercialization are discussed.

Aspect ratio dependent air stability of PbSe nanorods and photovoltaic applications

Development of unique strategies to overcome Shockley–Queisser (SQ) limit in solar cells has gained a great deal of interest. Multiple exciton generation (MEG) process has been considered as one of the best approaches to the SQ limitation. In this respect, PbSe quantum dots (QDs) and nanorods (NRs) have been regarded as promising solar energy harvesting materials owing to their noticeable MEG yields. Although air stability has been regarded as one of the main disadvantage of PbSe QDs, no study has pointed out to the air sensitivity of PbSe NRs yet. Here, we reveal the effect of aspect ratio on air sensitivity and optical properties of PbSe NRs and discover that NRs with higher aspect ratios are more air stable, attributed to the reduced density of NR ends with air sensitive {100} facets. Furthermore, a band offset was created by utilization of tetrabutylammonium iodide and 1,2-ethanedithiol ligands in cell designs. We found that solar cells based on pristine PbSe NRs are limited by low open circuit voltages due to leakage current pathways. On the other hand, modified cells comprising light absorbing layers prepared by blending NRs and QDs and hole transporting QD layer exhibit a 10-fold improvement in solar cell efficiency.

Approaching Charge Separation Efficiency to Unity without Charge Recombination

Improving the efficiency of charge separation (CS) and charge transport (CT) is essential for almost all optoelectronic applications, yet its maximization remains a big challenge. Here we propose a conceptual strategy to achieve CS efficiency close to unity and simultaneously avoid charge recombination (CR) during CT in a ferroelectric polar-discontinuity (PD) superlattice structure, as demonstrated in (BaTiO_{3})_{m}/(BiFeO_{3})_{n}, which is fundamentally different from the existing mechanisms. The competition of interfacial dipole and ferroelectric PD induces opposite band bending in BiFeO_{3} and BaTiO_{3} sublattices. Consequently, the photoexcited electrons (e) and holes (h) in individual sublattices move forward to the opposite interfaces forming electrically isolated e and h channels, leading to a CS efficiency close to unity. Importantly, the spatial isolation of conduction channels in (BaTiO_{3})_{m}/(BiFeO_{3})_{n} enable suppression of CR during CT, thus realizing a unique band diagram for spatially orthogonal CS and CT. Remarkably, (BaTiO_{3})_{m}/(BiFeO_{3})_{n} can maintain a high photocurrent and large band gap simultaneously. Our results provide a fascinating illumination for designing artificial heterostructures toward ideal CS and CT in optoelectronic applications.

Recent advances in persistent luminescence based on molecular hybrid materials

Molecular persistently luminescent materials have received recent attention due to their promising applications in optical displays, biological imaging, chemical sensing, and security systems. In this review, we systematically summarize recent advances in establishing persistently luminescent materials-specifically focusing on materials composed of molecular hybrids for the first time. We describe the main strategies for synthesizing these hybrid materials, namely: (i) inorganics/organics, (ii) organics/organics, and (iii) organics/polymer systems and demonstrate how molecular hybrids provide synergistic effects, while improving luminescence lifetimes and efficiencies. These hybrid materials promote new methods for tuning key physical properties such as singlet-triplet excited state energies by controlling the chemical interactions and molecular orientations in the solid state. We review new advances in these materials from the perspective of examining experimental and theoretical approaches to room-temperature phosphorescence and thermally-activated delayed fluorescence. Finally, this review concludes by summarizing the current challenges and future opportunities for these hybrid materials.

Unconventional singlet fission materials

Singlet fission (SF) is a photophysical downconversion pathway, in which a singlet excitation transforms into two triplet excited states. As such, it constitutes an exciton multiplication generation process, which is currently at the focal point for future integration into solar energy conversion devices. Beyond this, various other exciting applications were proposed, including quantum cryptography or organic light emitting diodes. Also, the mechanistic understanding evolved rapidly during the last year. Unfortunately, the number of suitable SF-chromophores is still limited. This is per se problematic, considering the wide range of envisaged applicability. With that in mind, we emphasize uncommon SF-scaffolds and outline requirements as well as strategies to expand the chromophore pool of SF-materials.

A Bayesian approach to luminescent down-conversion

Photon conversion embodies a range of promising possibilities in pushing the theoretical Shockley-Queisser efficiency model of classical solar cells. Luminescent down-conversion, despite its potential, is held back in practical applications due to the difficulty of proper characterization in no small part because of concurrent luminescent downshifting events. Recent advances have demonstrated the opportunity provided by photon correlation measurement for down-conversion characterization. In this methodological work, we present a general method based on Bayesian probabilities for deriving auto-correlation functions analytically. This method is then applied to the five down-conversion mechanisms reported in the literature and successfully tested against numerical simulations. We show that the zero delay auto-correlation function can be the most direct way to demonstrate down-conversion and assess its efficiency. Our analysis offers additional useful tools for the design of characterization experiments and emphasizes some universal behavior valid for all reported conversion mechanisms.

Structural properties of PbTe quantum dots revealed by high-energy x-ray diffraction

High-energy x-ray diffraction (HE-XRD) experiments combined with an analysis based on atomic-pair-distribution functions can be an effective tool for probing low-dimensional materials. Here, we show how such an analysis can be used to gain insight into structural properties of PbTe nanoparticles (NPs). We interpret our HE-XRD data using an orthorhombic Pnma phase of PbTe, which is an orthorhombic distortion of the rocksalt phase. Although local crystal geometry can vary substantially with particle size at scales below 10 nm, and for very small NPs the particle size itself influences x-ray diffraction patterns, our study shows that HE-XRD can provide a unique nano-characterization tool for unraveling structural properties of nanoscale systems.

Numerical Analysis of the Detailed Balance of Multiple Exciton Generation Solar Cells with Nonradiative Recombination

In this study, we analyzed the nonradiative recombination impact of multiple exciton generation solar cells (MEGSCs) with a revised detailed balance (DB) limit. The nonideal quantum yield (QY) of a material depends on the surface defects or the status of the material. Thus, its QY shape deviates from the ideal QY because of carrier losses. We used the ideal reverse saturation current variation in the DB of MEGSCs to explain the impact of nonradiative recombination. We compared ideal and nonideal QYs with the nonradiative recombination into the DB of MEGSCs under one-sun and full-light concentration. Through this research, we seek to develop a strategy to maintain MEGSC performance.

Solution Processing and Self-Organization of PbS Quantum Dots Passivated with Formamidinium Lead Iodide (FAPbI3)

Solution-processed lead sulfide quantum dots (PbS QDs) are very attractive as NIR-active semiconductors for the fabrication of cost-efficient optoelectronic devices. To control the thin film carrier transport, as well as stability, surface passivation is of crucial importance. Here, we present the successful surface passivation of PbS QDs by the formamidinium lead iodide (FAPbI3) ligand. An effective procedure for the fabrication of FAPbI3-passivated PbS QDs through a binary-phase ligand exchange protocol in hexane and n-methylformamide is demonstrated. It is shown that this solution-processed ligand exchange drastically changes the photoluminescence intensity, exciton recombination dynamics, and carrier lifetime of the nanocrystals. The solution casting of the ligand-exchanged nanocrystals into thin films results in the periodic ordering of QDs in a square superlattice with close contacts. Planar graphene/QD photodetectors fabricated with PbS QDs passivated with FAPbI3 show substantially increased thermal stability as compared to similar devices using PbS QDs passivated with commonly used methylammonium lead iodide.

Experimental study of the size-dependent photoluminescence emission of CBD-grown PbSe nanocrystals on glass

In this work, we study the size-dependent properties of Photoluminescence (PL) emissions of PbSe Nanocrystals (NCs) grown by Chemical Bath Deposition (CBD) method. In previous studies, PL emissions have been tuned by CBD-grown PbSe, and the growth mechanism was dependent on crystalized substrates such as GaAs. In this research, however, PL emissions are controlled over the midinfrared (MIR) range, through PbSe NCs, which are deposited on glass as an amorphous material. This study proposes an alternative approach to control PL emissions, which provides us with more freedom to fabricate low-cost MIR light sources as crucial components in remote sensing and gas analysis. Moreover, in this study, the advantage of the post-thermal method to control the NCs size, compared to the growth temperature, is shown.

PbE (E = S, Se) Colloidal Quantum Dot-Layered 2D Material Hybrid Photodetectors

Hybrid lead chalcogenide (PbE) (E = S, Se) quantum dot (QD)-layered 2D systems are an emerging class of photodetectors with unique potential to expand the range of current technologies and easily integrate into current complementary metal-oxide-semiconductor (CMOS)-compatible architectures. Herein, we review recent advancements in hybrid PbE QD-layered 2D photodetectors and place them in the context of key findings from studies of charge transport in layered 2D materials and QD films that provide lessons to be applied to the hybrid system. Photodetectors utilizing a range of layered 2D materials including graphene and transition metal dichalcogenides sensitized with PbE QDs in various device architectures are presented. Figures of merit such as responsivity (R) and detectivity (D*) are reviewed for a multitude of devices in order to compare detector performance. Finally, a look to the future considers possible avenues for future device development, including potential new materials and device treatment/fabrication options.

Photoexcited carrier dynamics in colloidal quantum dot solar cells: insights into individual quantum dots, quantum dot solid films and devices

The certified power conversion efficiency (PCE) record of colloidal quantum dot solar cells (QDSCs) has considerably improved from below 4% to 16.6% in the last few years. However, the record PCE value of QDSCs is still substantially lower than the theoretical efficiency. So far, there have been several reviews on recent and significant achievements in QDSCs, but reviews on photoexcited carrier dynamics in QDSCs are scarce. The photovoltaic performances of QDSCs are still limited by the photovoltage, photocurrent and fill factor that are mainly determined by the photoexcited carrier dynamics, including carrier (or exciton) generation, carrier extraction or transfer, and the carrier recombination process, in the devices. In this review, the photoexcited carrier dynamics in the whole QDSCs, originating from individual quantum dots (QDs) to the entire device as well as the characterization methods used for analyzing the photoexcited carrier dynamics are summarized and discussed. The recent research including photoexcited multiple exciton generation (MEG), hot electron extraction, and carrier transfer between adjacent QDs, as well as carrier injection and recombination at each interface of QDSCs are discussed in detail herein. The influence of photoexcited carrier dynamics on the physiochemical properties of QDs and photovoltaic performances of QDSC devices is also discussed.

Hot-electron dynamics in quantum dots manipulated by spin-exchange Auger interactions

The ability to effectively manipulate non-equilibrium 'hot' carriers could enable novel schemes for highly efficient energy harvesting and interconversion. In the case of semiconductor materials, realization of such hot-carrier schemes is complicated by extremely fast intraband cooling (picosecond to subpicosecond time scales) due to processes such as phonon emission. Here we show that using magnetically doped colloidal semiconductor quantum dots we can achieve extremely fast rates of spin-exchange processes that allow for 'uphill' energy transfer with an energy-gain rate that greatly exceeds the intraband cooling rate. This represents a dramatic departure from the usual situation where energy-dissipation via phonon emission outpaces energy gains due to standard Auger-type energy transfer at least by a factor of three. A highly favourable energy gain/loss rate ratio realized in magnetically doped quantum dots can enable effective schemes for capturing kinetic energy of hot, unrelaxed carriers via processes such as spin-exchange-mediated carrier multiplication and upconversion, hot-carrier extraction and electron photoemission.

Oxygen Plasma-Induced p-Type Doping Improves Performance and Stability of PbS Quantum Dot Solar Cells

PbS quantum dots (QDs) have been extensively studied for photovoltaic applications, thanks to their facile and low-cost fabrication processing and interesting physical properties such as size dependent and tunable band gap. However, the performance of PbS QD-based solar cells is highly sensitive to the humidity level in the ambient air, which is a serious obstacle toward its practical applications. Although it has been previously revealed that oxygen doping of the hole transporting layer can mitigate the cause of this issue, the suggested methods to recover the device performance are time-consuming and relatively costly. Here, we report a low-power oxygen plasma treatment as a rapid and low-cost method to effectively recover the device performance and stability. Our optimization results show that a 10 min treatment is the best condition, resulting in an enhanced power conversion efficiency from 6.9% for the as-prepared device to 9% for the plasma treated one. Moreover, our modified device shows long-term shelf-life stability.

Unveiling a Novel, Cation-Rich Compound in a High-Pressure Pb-Te Binary System

Because of the common oxidation states of group IV elements (+2 or +4) and group VI elements (-2), 1:1 and 1:2 are two typical stoichiometries found in the IV-VI compounds. Particularly, in the Pb-Te binary system, the 1:1 stoichiometric PbTe is believed to be the only stable compound. Herein, using evolutionary algorithms, density functional theory, a laser-heated diamond anvil cell, and synchrotron X-ray diffraction experiments, we discovered a novel Pb-Te compound with an unexpected stoichiometry of 3:2 above 20 GPa. This tetragonal Pb3Te2 is the one of the very few cation-rich compounds that has ever been discovered in the entire IV-VI binary system. Further analyses based on electron density distribution, electron localization function, and Bader charge have shown that this newly discovered compound has a mixed character of chemical bonding with a decreased ionicity. By further calculating the electron-phonon interaction, Pb3Te2 is predicted to exhibit a superconducting transition at low temperatures. The discovery of Pb3Te2 paves the way for further explorations of other novel cation-rich IV-VI group compounds.

Infrared Quantum Dots: Progress, Challenges, and Opportunities

Infrared technologies provide tremendous value to our modern-day society. The need for easy-to-fabricate, solution-processable, tunable infrared active optoelectronic materials has driven the development of infrared colloidal quantum dots, whose band gaps can readily be tuned by dimensional constraints due to the quantum confinement effect. In this Perspective, we summarize recent progress in the development of infrared quantum dots both as infrared light emitters ( e.g., in light-emitting diodes, biological imaging, etc.) as well as infrared absorbers ( e.g., in photovoltaics, solar fuels, photon up-conversion, etc.), focusing on how fundamental breakthroughs in synthesis, surface chemistry, and characterization techniques are facilitating the implementation of these nanostructures into exploratory device architectures as well as in emerging applications. We discuss the ongoing challenges and opportunities associated with infrared colloidal quantum dots.

Copper selenide (Cu3Se2 and Cu2-xSe) thin films: electrochemical deposition and electrocatalytic application in quantum dot-sensitized solar cells

In this work, high crystallinity copper selenide thin films directly deposited onto conducting substrates were obtained through a potentiostatic electrodeposition approach. The as-deposited copper selenides involve annealing induced phase transformation from tetragonal Cu3Se2 to cubic Cu2-xSe. The annealing also leads to a remarkable morphology change from dendritic nanosheets to connected networks and separated particle shapes for the annealed (A-Cu2-xSe) and selenized (S-Cu2-xSe) samples, respectively. The copper selenide thin films were demonstrated to serve as efficient counter electrodes (CEs) in quantum dot-sensitized solar cells (QDSCs) for electrocatalyzing polysulfide electrolyte regeneration. The CdS/CdSe QDSCs constructed with copper selenide CEs deliver considerable power conversion efficiencies (PCEs), especially an optimal value of 3.89% for the A-Cu2-xSe CE-based device. The enhanced photovoltaic performance benefits from the connected network microstructure of A-Cu2-xSe films which afford a large number of reaction sites and efficient charge transport pathways. The Tafel polarization characterization further indicates that, in contrast to the commonly used Cu2S and Pt CEs, the non-stoichiometric Cu2-xSe CE exhibits better electrochemical catalytic activity. This work highlights the great potential of electrodeposition for fabricating promising copper selenide CEs for high performance QDSCs.

Enhanced Multiple Exciton Generation in PbS|CdS Janus-like Heterostructured Nanocrystals

Generating multiple excitons by a single high-energy photon is a promising third-generation solar energy conversion strategy. We demonstrate that multiple exciton generation (MEG) in PbS|CdS Janus-like heteronanostructures is enhanced over that of single-component and core/shell nanocrystal architectures, with an onset close to two times the PbS band gap. We attribute the enhanced MEG to the asymmetric nature of the heteronanostructure that results in an increase in the effective Coulomb interaction that drives MEG and a reduction of the competing hot exciton cooling rate. Slowed cooling occurs through effective trapping of hot-holes by a manifold of valence band interfacial states having both PbS and CdS character, as evidenced by photoluminescence studies and ab initio calculations. Using transient photocurrent spectroscopy, we find that the MEG characteristics of the individual nanostructures are maintained in conductive arrays and demonstrate that these quasi-spherical PbS|CdS nanocrystals can be incorporated as the main absorber layer in functional solid-state solar cell architectures. Finally, based upon our analysis, we provide design rules for the next generation of engineered nanocrystals to further improve the MEG characteristics.

Effects of Electric Fields on Multiple Exciton Generation

Unique properties of lead chalcogenides have enabled multiple exciton generation (MEG) in their nanocrystals that can be beneficial in enhancing the efficiency of third-generation solar cells. Although the intrinsic electric field plays an imperative role in a solar cell, its effect on the multiple exciton generation (MEG) has been overlooked, so far. Using EOM-CCSD as a many-body approach, we show that any electric field can affect the absorptivity spectra of the lead chalcogenide nanocrystals (Pb₄ Te₄ , Pb₄ Se₄ , and Pb₄ S₄ ). The same electric field, however, has insignificant effects on the MEG quantum probabilities and the thresholds in these nanocrystals. Furthermore, simulations show that Pb₄ Te₄ , among the aforementioned nanocrystals, has the lowest MEG threshold and the strongest absorptivity peak that is located in the multi-excitation window, irrespective of the field strength, making it the most suitable candidate for MEG applications. Simulations also demonstrate that an electric field affects the MEG characteristics in the Pb₄ Te₄ nanocrystal, in general, less than it perturbs MEG characteristics in Pb₄ Se₄ and Pb₄ S₄ nanocrystals. Our results can have a great impact in designing optoelectronic devices whose performance can be significantly influenced by MEG.

Quantum Dot Solar Cells: Small Beginnings Have Large Impacts

From a niche field over 30 years ago, quantum dots (QDs) have developed into viable materials for many commercial optoelectronic devices. We discuss the advancements in Pb-based QD solar cells (QDSCs) from a viewpoint of the pathways an excited state can take when relaxing back to the ground state. Systematically understanding the fundamental processes occurring in QDs has led to improvements in solar cell efficiency from ~3% to over 13% in 8 years. We compile data from ~200 articles reporting functioning QDSCs to give an overview of the current limitations in the technology. We find that the open circuit voltage limits the device efficiency and propose some strategies for overcoming this limitation.

Dynamics of Charge Transfer and Multiple Exciton Generation in the Doped Silicon Quantum Dot-Carbon Nanotube System: Density Functional Theory-Based Computation

We use the Boltzmann transport equation (BE) to study time evolution of a photoexcited state, including phonon-mediated exciton relaxation, multiple exciton generation (MEG), and energy-transfer processes. BE collision integrals are derived using Kadanoff-Baym-Keldysh many-body perturbation theory (MBPT) based on density functional theory (DFT) simulations, including exciton effects. We apply the method to a nanostructured p- n junction composed of a 1 nm hydrogen-terminated Si quantum dot (QD) doped with two phosphorus atoms (Si₃₆P₂H₄₂) adjacent to the (6, 2) single-wall carbon nanotube (CNT) with two chlorine atoms per two unit cells adsorbed to the surface. We find that an initial excitation localized on either the QD or CNT evolves into a transient charge-transfer (CT) state where either electron or hole transfer has taken place. The CT state lifetime is about 40 fs. Also, we study MEG in this system by computing internal quantum efficiency (QE), which is the number of excitons generated from an absorbed photon during relaxation. We predict efficient MEG starting at 3 E_g ≃ 1.5 eV and with QE reaching QE = 1.65 at about 5 E_g, where E_g ≃ 0.5 eV is the lowest exciton energy, i.e., the gap. However, we find that including energy transfer and MEG effects suppresses CT state generation.

In Situ Passivation for Efficient PbS Quantum Dot Solar Cells by Precursor Engineering

Current efforts on lead sulfide quantum dot (PbS QD) solar cells are mostly paid to the device architecture engineering and postsynthetic surface modification, while very rare work regarding the optimization of PbS synthesis is reported. Here, PbS QDs are successfully synthesized using PbO and PbAc₂  · 3H₂ O as the lead sources. QD solar cells based on PbAc-PbS have demonstrated a high power conversion efficiency (PCE) of 10.82% (and independently certificated values of 10.62%), which is significantly higher than the PCE of 9.39% for PbO-PbS QD based ones. For the first time, systematic investigations are carried out on the effect of lead precursor engineering on the device performance. It is revealed that acetate can act as an efficient capping ligands together with oleic acid, providing better surface coverage and replace some of the harmful hydroxyl (OH) ligands during the synthesis. Then the acetate on the surface can be exchanged by iodide and lead to desired passivation. This work demonstrates that the precursor engineering has great potential in performance improvement. It is also pointed out that the initial synthesis is an often neglected but critical stage and has abundant room for optimization to further improve the quality of the resultant QDs, leading to breakthrough efficiency.

Dynamics of singlet fission and electron injection in self-assembled acene monolayers on titanium dioxide

We employ a combination of linear spectroscopy, electrochemistry, and transient absorption spectroscopy to characterize the interplay between electron transfer and singlet fission dynamics in polyacene-based dyes attached to nanostructured TiO2. For triisopropyl silylethynyl (TIPS)-pentacene, we find that the singlet fission time constant increases to 6.5 ps on a nanostructured TiO2 surface relative to a thin film time constant of 150 fs, and that triplets do not dissociate after they are formed. In contrast, TIPS-tetracene singlets quickly dissociate in 2 ps at the molecule/TiO2 interface, and this dissociation outcompetes the relatively slow singlet fission process. The addition of an alumina layer slows down electron injection, allowing the formation of triplets from singlet fission in 40 ps. However, the triplets do not inject electrons, which is likely due to a lack of sufficient driving force for triplet dissociation. These results point to the critical balance required between efficient singlet fission and appropriate energetics for interfacial charge transfer.

Scattering and absorption differ drastically in their inner filter effects on fluorescence, resonance synchronous, and polarized resonance synchronous spectroscopic measurements

Reported herein is the finding that photon scattering and absorption differ drastically in inducing the sample IFE in SSF, RS2, and the PRS2 spectra measurements.

Multiple Exciton Generation in Nanostructures for Advanced Photovoltaic Cells

This paper reviews both experimental and theoretical work on nanostructures showing high quantum yields due to the phenomenon of multiple exciton generation. It outlines the aims and barriers to progress in identifying further such nanostructures and also includes important developments concerning solar devices where nanostructures act as the light-absorbing component. It reports on both semiconductor and carbon structures, both monocomposite (of various dimensionalities) and heterogeneous. Finally, it looks at future directions that can be taken to push solar cell efficiency above the classic limit set by Shockley and Queisser in 1961.

Nearly monodisperse PbS quantum dots for highly efficient solar cells: anin situseeded ion exchange approach

A facilein situseeded ion-exchange is explored to produce nearly monodisperse Pbs QDs sensitized mesoporous TiO₂for highly efficient photovoltaics.

Designing Diameter-Modulated Heterostructure Nanowires of PbTe/Te by Controlled Dewetting

Heterostructures consisting of semiconductors with controlled morphology and interfaces find applications in many fields. A range of axial, radial, and diameter-modulated nanostructures have been synthesized primarily using vapor phase methods. Here, we present a simple wet chemical routine to synthesize heterostructures of PbTe/Te using Te nanowires as templates. A morphology evolution study for the formation of these heterostructures has been performed. On the basis of these control experiments, a pathway for the formation of these nanostructures is proposed. Reduction of a Pb precursor to Pb on Te nanowire templates followed by interdiffusion of Pb/Te leads to the formation of a thin shell of PbTe on the Te wires. Controlled dewetting of the thin shell leads to the formation of cube-shaped PbTe that is periodically arranged on the Te wires. Using control experiments, we show that different reactions parameters like rate of addition of the reducing agent, concentration of Pb precursor and thickness of initial Te nanowire play a critical role in controlling the spacing between the PbTe cubes on the Te wires. Using simple surface energy arguments, we propose a mechanism for the formation of the hybrid. The principles presented are general and can be exploited for the synthesis of other nanoscale heterostructures.

Highly Efficient Flexible Quantum Dot Solar Cells with Improved Electron Extraction Using MgZnO Nanocrystals

Colloidal quantum dot (CQD) solar cells have high potential for realizing an efficient and lightweight energy supply for flexible or wearable electronic devices. To achieve highly efficient and flexible CQD solar cells, the electron transport layer (ETL), extracting electrons from the CQD solid layer, needs to be processed at a low-temperature and should also suppress interfacial recombination. Herein, a highly stable MgZnO nanocrystal (MZO-NC) layer is reported for efficient flexible PbS CQD solar cells. Solar cells fabricated with MZO-NC ETL give a high power conversion efficiency (PCE) of 10.4% and 9.4%, on glass and flexible plastic substrates, respectively. The reported flexible CQD solar cell has the record efficiency to date of flexible CQD solar cells. Detailed theoretical simulations and extensive characterizations reveal that the MZO-NCs significantly enhance charge extraction from CQD solids and diminish the charge accumulation at the ETL/CQD interface, suppressing charge interfacial recombination. These important results suggest that the low-temperature processed MZO-NCs are very promising for use in efficient flexible solar cells or other flexible optoelectronic devices.

Investigation of anti-solvent induced optical properties change of cesium lead bromide iodide mixed perovskite (CsPbBr3-xIx) quantum dots

Cesium lead halide (CsPbX₃, X=Cl, Br, I) perovskites are a new material system that has attracted a lot of research focus. Its tunable band gap and better thermal stability than organic lead halide perovskite give it the potential for applications in optoelectronic devices such as light-emitting diodes and solar cells. Here we have synthesized CsPbBr_3-xI_x perovskite quantum dots (QDs) via a solution process, and then have selected three different anti-solvents to purify the product. A significant effect on optical properties of CsPbBr_3-xI_x was found after the centrifugation process. Up to a ∼40nm shift was observed in mixed halide CsPbBr_3-xI_x QDs in both absorbance and PL spectra after purification while there was no obvious change in pure CsPbBr₃ when it was subjected to the same purification steps. XPS analysis shows that the Br:I ratio of the CsPbBr_3-xI_x QDs had changed as a result of exposure to the anti-solvent, causing the change of the band gap and shift of the spectra. It is also shown that iodine can be removed more easily than bromine during the anti-solvent purification. Ab-initio simulations of small CsPbBr_3-xI_x atomic clusters suggest that exposed Cs ions on Cs-terminated facets are the first species to be attacked by hydrophilic molecules, likely dragging halide ions into solution with them to maintain overall charge neutrality in the material. Charge carrier recombination rates were found to be unchanged and all samples maintained a good PL quantum yield which was more than 44%.

Non-Poissonian photon statistics from macroscopic photon cutting materials

In optical materials energy is usually extracted only from the lowest excited state, resulting in fundamental energy-efficiency limits such as the Shockley-Queisser limit for single-junction solar cells. Photon-cutting materials provide a way around such limits by absorbing high-energy photons and 'cutting' them into multiple low-energy excitations that can subsequently be extracted. The occurrence of photon cutting or quantum cutting has been demonstrated in a variety of materials, including semiconductor quantum dots, lanthanides and organic dyes. Here we show that photon cutting results in bunched photon emission on the timescale of the excited-state lifetime, even when observing a macroscopic number of optical centres. Our theoretical derivation matches well with experimental data on NaLaF₄:Pr³⁺, a material that can cut deep-ultraviolet photons into two visible photons. This signature of photon cutting can be used to identify and characterize new photon-cutting materials unambiguously.

Understanding chemically processed solar cells based on quantum dots

Photovoltaic energy conversion is one of the best alternatives to fossil fuel combustion. Petroleum resources are now close to depletion and their combustion is known to be responsible for the release of a considerable amount of greenhouse gases and carcinogenic airborne particles. Novel third-generation solar cells include a vast range of device designs and materials aiming to overcome the factors limiting the current technologies. Among them, quantum dot-based devices showed promising potential both as sensitizers and as colloidal nanoparticle films. A good example is the p-type PbS colloidal quantum dots (CQDs) forming a heterojunction with a n-type wide-band-gap semiconductor such as TiO2 or ZnO. The confinement in these nanostructures is also expected to result in marginal mechanisms, such as the collection of hot carriers and generation of multiple excitons, which would increase the theoretical conversion efficiency limit. Ultimately, this technology could also lead to the assembly of a tandem-type cell with CQD films absorbing in different regions of the solar spectrum.

Phase-Transfer Ligand Exchange of Lead Chalcogenide Quantum Dots for Direct Deposition of Thick, Highly Conductive Films

The use of semiconductor nanocrystal quantum dots (QDs) in optoelectronic devices typically requires postsynthetic chemical surface treatments to enhance electronic coupling between QDs and allow for efficient charge transport in QD films. Despite their importance in solar cells and infrared (IR) light-emitting diodes and photodetectors, advances in these chemical treatments for lead chalcogenide (PbE; E = S, Se, Te) QDs have lagged behind those of, for instance, II-VI semiconductor QDs. Here, we introduce a method for fast and effective ligand exchange for PbE QDs in solution, resulting in QDs completely passivated by a wide range of small anionic ligands. Due to electrostatic stabilization, these QDs are readily dispersible in polar solvents, in which they form highly concentrated solutions that remain stable for months. QDs of all three Pb chalcogenides retain their photoluminescence, allowing for a detailed study of the effect of the surface ionic double layer on electronic passivation of QD surfaces, which we find can be explained using the hard/soft acid-base theory. Importantly, we prepare highly conductive films of PbS, PbSe, and PbTe QDs by directly casting from solution without further chemical treatment, as determined by field-effect transistor measurements. This method allows for precise control over the surface chemistry, and therefore the transport properties of deposited films. It also permits single-step deposition of films of unprecedented thickness via continuous processing techniques, as we demonstrate by preparing a dense, smooth, 5.3-μm-thick PbSe QD film via doctor-blading. As such, it offers important advantages over laborious layer-by-layer methods for solar cells and photodetectors, while opening the door to new possibilities in ionizing-radiation detectors.