1
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Liu L, Pan D, Wen L, Zhuo R, Zhao J. High-quality vertically aligned InAs nanowires grown by molecular-beam epitaxy using Ag-In alloy segregation. NANOTECHNOLOGY 2023; 34:225701. [PMID: 36827703 DOI: 10.1088/1361-6528/acbeb2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/22/2022] [Accepted: 02/24/2023] [Indexed: 06/18/2023]
Abstract
InAs nanowires show important potential applications in novel nanoelectronic devices, infrared optoelectronic devices and quantum devices, and all these applications require controllable growth of the InAs nanowires. However, the growth direction of metal-assisted InAs nanowires on Si substrates is often random. Here, we develop a new approach to grow vertically aligned InAs nanowires on Si (111) substrates by molecular-beam epitaxy using Ag as catalysts. The vertically aligned one-dimensional InAs nanowires are grown on the parasitic two-dimensional InAs film on the Si substrates by using the Ag nanoparticles segregated from Ag-In alloy catalysts. The diameters of the vertically aligned InAs nanowires obtained by this method are mainly distributed between 20 and 50 nm. Detailed transmission electron microscope data show that the nanowires with thinner diameters tend to have less stacking faults and twin defects and high crystal quality pure wurtzite nanowires can be obtained. Using these vertically aligned InAs nanowires as the channel material of field effect transistors, we have obtained a field-effect mobility of ∼2800 cm2V-1s-1and anIon/Ioffratio of ∼104at room temperature. Our work provides a new method for the controlled growth of high-quality vertically aligned InAs nanowires on Si substrates.
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Affiliation(s)
- Lei Liu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Dong Pan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Lianjun Wen
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China
| | - Ran Zhuo
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Jianhua Zhao
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
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2
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Yan X, Liu Y, Zha C, Zhang X, Zhang Y, Ren X. Non-〈111〉-oriented semiconductor nanowires: growth, properties, and applications. NANOSCALE 2023; 15:3032-3050. [PMID: 36722935 DOI: 10.1039/d2nr06421a] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
In recent years, non-〈111〉-oriented semiconductor nanowires have attracted increasing interest in terms of fundamental research and promising applications due to their outstanding crystal quality and distinctive physical properties. Here, a comprehensive overview of recent advances in the study of non-〈111〉-oriented semiconductor nanowires is presented. We start by introducing various growth techniques for obtaining nanowires with certain orientations, for which the growth energetics and kinetics are discussed. Attention is then given to the physical properties of non-〈111〉 nanowires, as predicted by theoretical calculations or demonstrated experimentally. After that, we review the advantages and challenges of non-〈111〉 nanowires as building blocks for electronic and optoelectronic devices. Finally, we discuss the possible challenges and opportunities in the research field of non-〈111〉 semiconductor nanowires.
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Affiliation(s)
- Xin Yan
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China.
| | - Yuqing Liu
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China.
| | - Chaofei Zha
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China.
- School of Micro-Nano Electronics, Zhejiang University, Hangzhou, Zhejiang 311200, China.
| | - Xia Zhang
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China.
| | - Yunyan Zhang
- School of Micro-Nano Electronics, Zhejiang University, Hangzhou, Zhejiang 311200, China.
| | - Xiaomin Ren
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China.
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3
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Verma V, Mitchell H, Guo M, Hodnett BK, Heng JYY. Studying the impact of the pre-exponential factor on templated nucleation. Faraday Discuss 2022; 235:199-218. [PMID: 35388818 DOI: 10.1039/d1fd00101a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Traditionally, the enhancement of nucleation rates in the presence of heterogeneous surfaces in crystallisation processes has been attributed to the modification of the interfacial energy of the system according to the classical nucleation theory. However, recent developments have shown that heterogeneous surfaces instead alter the pre-exponential factor of nucleation. In this work, the nucleation kinetics of glycine and diglycine in aqueous solutions have been explored in the presence and absence of a heterogeneous surface. Results from induction time experiments show that the presence of a heterogeneous surface increases the pre-exponential factor by 2-fold or more for both glycine and diglycine, while the interfacial energy remains unchanged for both species. This study suggests that the heterogeneous surface enhances the nucleation rate via hydrogen bond formation with both glycine and diglycine. This is verified by hydrogen bond propensity calculations, molecular functionality analysis, and calculation of the time taken for a solute molecule to attach to the growing nucleus, which is an order of magnitude shorter than the estimated lifetime of the hydrogen bond. The effect of the heterosurface is of greater magnitude for diglycine than for glycine, which may be due to the heightened molecular complementarity between the hydrogen bond donor and acceptor sites on diglycine and the heterosurface.
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Affiliation(s)
- Vivek Verma
- Department of Chemical Engineering, Imperial College London, South Kensington Campus, London, SW7 2AZ, UK.
| | - Hamish Mitchell
- Department of Chemical Engineering, Imperial College London, South Kensington Campus, London, SW7 2AZ, UK.
| | - Mingxia Guo
- Department of Chemical Engineering, Imperial College London, South Kensington Campus, London, SW7 2AZ, UK.
| | - Benjamin K Hodnett
- Synthesis and Solid State Pharmaceutical Centre, Department of Chemical Sciences, Bernal Institute, University of Limerick, Limerick, V94 T9PX, Ireland
| | - Jerry Y Y Heng
- Department of Chemical Engineering, Imperial College London, South Kensington Campus, London, SW7 2AZ, UK. .,Institute of Molecular Science and Engineering, Imperial College London, South Kensington Campus, London, SW7 2AZ, UK
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4
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Alhalaili B, Al-Duweesh A, Popescu IN, Vidu R, Vladareanu L, Islam MS. Improvement of Schottky Contacts of Gallium Oxide (Ga2O3) Nanowires for UV Applications. SENSORS 2022; 22:s22052048. [PMID: 35271195 PMCID: PMC8914786 DOI: 10.3390/s22052048] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/14/2021] [Revised: 02/07/2022] [Accepted: 03/03/2022] [Indexed: 12/04/2022]
Abstract
Interest in the synthesis and fabrication of gallium oxide (Ga2O3) nanostructures as wide bandgap semiconductor-based ultraviolet (UV) photodetectors has recently increased due to their importance in cases of deep-UV photodetectors operating in high power/temperature conditions. Due to their unique properties, i.e., higher surface-to-volume ratio and quantum effects, these nanostructures can significantly enhance the sensitivity of detection. In this work, two Ga2O3 nanostructured films with different nanowire densities and sizes obtained by thermal oxidation of Ga on quartz, in the presence and absence of Ag catalyst, were investigated. The electrical properties influenced by the density of Ga2O3 nanowires (NWs) were analyzed to define the configuration of UV detection. The electrical measurements were performed on two different electric contacts and were located at distances of 1 and 3 mm. Factors affecting the detection performance of Ga2O3 NWs film, such as the distance between metal contacts (1 and 3 mm apart), voltages (5–20 V) and transient photocurrents were discussed in relation to the composition and nanostructure of the Ga2O3 NWs film.
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Affiliation(s)
- Badriyah Alhalaili
- Nanotechnology and Advanced Materials Program, Kuwait Institute for Scientific Research, P.O. Box 24885, Kuwait City 13109, Kuwait; (B.A.); (A.A.-D.)
| | - Ahmad Al-Duweesh
- Nanotechnology and Advanced Materials Program, Kuwait Institute for Scientific Research, P.O. Box 24885, Kuwait City 13109, Kuwait; (B.A.); (A.A.-D.)
| | - Ileana Nicoleta Popescu
- Faculty of Materials Engineering and Mechanics, Valahia University of Targoviste, 130004 Targoviste, Romania;
| | - Ruxandra Vidu
- Faculty of Materials Science and Engineering, University Politehnica of Bucharest, 060042 Bucharest, Romania
- Department of Electrical and Computer Engineering, University of California, Davis, Davis, CA 95616, USA;
- Correspondence: (R.V.); (L.V.)
| | - Luige Vladareanu
- Robotics and Mechatronics Department, Institute of Solid Mechanics, Romanian Academy, 030167 Bucharest, Romania
- Correspondence: (R.V.); (L.V.)
| | - M. Saif Islam
- Department of Electrical and Computer Engineering, University of California, Davis, Davis, CA 95616, USA;
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5
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Zhang L, Li X, Cheng S, Shan C. Microscopic Understanding of the Growth and Structural Evolution of Narrow Bandgap III-V Nanostructures. MATERIALS 2022; 15:ma15051917. [PMID: 35269147 PMCID: PMC8911728 DOI: 10.3390/ma15051917] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/29/2021] [Revised: 02/23/2022] [Accepted: 02/24/2022] [Indexed: 12/02/2022]
Abstract
III–V group nanomaterials with a narrow bandgap have been demonstrated to be promising building blocks in future electronic and optoelectronic devices. Thus, revealing the underlying structural evolutions under various external stimuli is quite necessary. To present a clear view about the structure–property relationship of III–V nanowires (NWs), this review mainly focuses on key procedures involved in the synthesis, fabrication, and application of III–V materials-based devices. We summarized the influence of synthesis methods on the nanostructures (NWs, nanodots and nanosheets) and presented the role of catalyst/droplet on their synthesis process through in situ techniques. To provide valuable guidance for device design, we further summarize the influence of structural parameters (phase, defects and orientation) on their electrical, optical, mechanical and electromechanical properties. Moreover, the dissolution and contact formation processes under heat, electric field and ionic water environments are further demonstrated at the atomic level for the evaluation of structural stability of III–V NWs. Finally, the promising applications of III–V materials in the energy-storage field are introduced.
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Affiliation(s)
| | - Xing Li
- Correspondence: (X.L.); (C.S.)
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Maliakkal CB, Jacobsson D, Tornberg M, Dick KA. Post-nucleation evolution of the liquid-solid interface in nanowire growth. NANOTECHNOLOGY 2021; 33:105607. [PMID: 34847548 DOI: 10.1088/1361-6528/ac3e8d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/01/2021] [Accepted: 11/30/2021] [Indexed: 06/13/2023]
Abstract
We study usingin situtransmission electron microscopy the birth of GaAs nanowires from liquid Au-Ga catalysts on amorphous substrates. Lattice-resolved observations of the starting stages of growth are reported here for the first time. It reveals how the initial nanostructure evolves into a nanowire growing in a zincblende 〈111〉 or the equivalent wurtzite〈0001〉 direction. This growth direction(s) is what is typically observed in most III-V and II-VI nanowires. However, the reason for this preferential nanowire growth along this direction is still a dilemma. Based on the videos recorded shortly after the nucleation of nanowires, we argue that the lower catalyst droplet-nanowire interface energy of the {111} facet when zincblende (or the equivalent {0001} facet in wurtzite) is the reason for this direction selectivity in nanowires.
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Affiliation(s)
- Carina B Maliakkal
- Centre for Analysis and Synthesis, Lund University, Box 124, 22100, Lund, Sweden
- Solid State Physics, Lund University, Box 118, 22100, Lund, Sweden
- NanoLund, Lund University, Box 118, 22100, Lund, Sweden
| | - Daniel Jacobsson
- Centre for Analysis and Synthesis, Lund University, Box 124, 22100, Lund, Sweden
- NanoLund, Lund University, Box 118, 22100, Lund, Sweden
- National Center for High Resolution Electron Microscopy, Lund University, Box 124, 22100, Lund, Sweden
| | - Marcus Tornberg
- Centre for Analysis and Synthesis, Lund University, Box 124, 22100, Lund, Sweden
- NanoLund, Lund University, Box 118, 22100, Lund, Sweden
| | - Kimberly A Dick
- Centre for Analysis and Synthesis, Lund University, Box 124, 22100, Lund, Sweden
- NanoLund, Lund University, Box 118, 22100, Lund, Sweden
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7
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Gang GW, Lee JH, Kim SY, Jeong T, Bin Kim K, Thi Hong Men N, Kim YR, Ahn SJ, Kim CS, Kim YH. Microstructural evolution in self-catalyzed GaAs nanowires during in-situ TEM study. NANOTECHNOLOGY 2021; 32:145709. [PMID: 33326944 DOI: 10.1088/1361-6528/abd437] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The microstructural evolutions in self-catalyzed GaAs nanowires (NWs) were investigated by using in situ heating transmission electron microscopy (TEM). The morphological changes of the self-catalyst metal gallium (Ga) droplet, the GaAs NWs, and the atomic behavior at the interface between the self-catalyst metal gallium and GaAs NWs were carefully studied by analysis of high-resolution TEM images. The microstructural change of the Ga-droplet/GaAs-NWs started at a low temperature of ∼200 °C. Formation and destruction of atomic layers were observed at the Ga/GaAs interface and slow depletion of the Ga droplet was detected in the temperature range investigated. Above 300 °C, the evolution process dramatically changed with time: The Ga droplet depleted rapidly and fast growth of zinc-blende (ZB) GaAs structures were observed in the droplet. The Ga droplet was completely removed with time and temperature. When the temperature reached ∼600 °C, the decomposition of GaAs was detected. This process began in the wurtzite (WZ) structure and propagated to the ZB structure. The morphological and atomistic behaviors in self-catalyzed GaAs NWs were demonstrated based on thermodynamic considerations, in addition to the effect of the incident electron beam in TEM. Finally, GaAs decomposition was demonstrated in terms of congruent vaporization.
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Affiliation(s)
- Geun Won Gang
- Department of Physics, Chungnam National University, 99 Daehak-Ro, Yuseong-Gu, Daejeon 34134, Republic of Korea
| | - Jong Hoon Lee
- UNIST Central Research Facilities (UCRF), UNIST, Ulsan 44919, Republic of Korea
| | - Su Yeon Kim
- Graduate School of Analytical Science and Technology (GRAST), Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon 34134, Republic of Korea
| | - Taehyeon Jeong
- Graduate School of Analytical Science and Technology (GRAST), Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon 34134, Republic of Korea
| | - Kyung Bin Kim
- Graduate School of Analytical Science and Technology (GRAST), Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon 34134, Republic of Korea
| | - Nguyen Thi Hong Men
- Graduate School of Analytical Science and Technology (GRAST), Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon 34134, Republic of Korea
| | - Yu Ra Kim
- Graduate School of Analytical Science and Technology (GRAST), Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon 34134, Republic of Korea
| | - Sang Jung Ahn
- Korea Research Institute of Standard and Science, 267 Gajeong-ro, Yuseong-gu, Daejeon 34113, Republic of Korea
- Korea University of Science and Technology, 217 Gajeong-ro, Yuseong-gu, Daejeon 34113, Republic of Korea
| | - Chung Soo Kim
- Korea Institute of Ceramic Engineering and Technology, 101 Soho-ro, Jinju 52851, Republic of Korea
| | - Young Heon Kim
- Graduate School of Analytical Science and Technology (GRAST), Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon 34134, Republic of Korea
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8
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Influence of Silver as a Catalyst on the Growth of β-Ga 2O 3 Nanowires on GaAs. MATERIALS 2020; 13:ma13235377. [PMID: 33256254 PMCID: PMC7730707 DOI: 10.3390/ma13235377] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/20/2020] [Revised: 11/19/2020] [Accepted: 11/24/2020] [Indexed: 01/01/2023]
Abstract
A simple and inexpensive thermal oxidation process was performed to synthesize gallium oxide (Ga2O3) nanowires using Ag thin film as a catalyst at 800 °C and 1000 °C to understand the effect of the silver catalyst on the nanowire growth. The effect of doping and orientation of the substrates on the growth of Ga2O3 nanowires on single-crystal gallium arsenide (GaAs) wafers in atmosphere were investigated. A comprehensive study of the oxide film and nanowire growth was performed using various characterization techniques including XRD, SEM, EDS, focused ion beam (FIB), XPS and STEM. Based on the characterization results, we believe that Ag thin film produces Ag nanoparticles at high temperatures and enhances the reaction between oxygen and gallium, contributing to denser and longer Ga2O3 nanowires compared to those grown without silver catalyst. This process can be optimized for large-scale production of high-quality, dense, and long nanowires.
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9
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Wen L, Liu L, Liao D, Zhuo R, Pan D, Zhao J. Silver-assisted growth of high-quality InAs 1- x Sb x nanowires by molecular-beam epitaxy. NANOTECHNOLOGY 2020; 31:465602. [PMID: 32750681 DOI: 10.1088/1361-6528/abac32] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
InAs1-x Sb x nanowires show promise for use in nanoelectronics, infrared optoelectronics and topological quantum computation. Such applications require a high degree of growth control over the growth direction, crystal quality and morphology of the nanowires. Here, we report on the silver-assisted growth of InAs1-x Sb x nanowires by molecular-beam epitaxy for the first time. We find that the growth parameters including growth temperature, indium flux and substrate play an important role in nanowire growth. Relatively high growth temperatures and low indium fluxes can suppress the growth of non-[111]-oriented nanowires on Si (111) substrates. Vertically aligned InAs1-x Sb x nanowires with high aspect ratios can be achieved on GaAs (111)B substrates. Detailed structural studies suggest that high-quality InAs1-x Sb x nanowires can be obtained by increasing antimony content. Silver-indium alloy segregation is found in ternary alloy InAs1-x Sb x nanowires, and it plays a key role in morphological evolution of the nanowires. Our work provides useful insights into the controllable growth of high-quality III-V semiconductor nanowires.
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Affiliation(s)
- Lianjun Wen
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
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10
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Berdnikov Y, Ilkiv I, Sibirev N, Ubyivovk E, Bouravleuv A. Comparison of GaAs nanowire growth seeded by Ag and Au colloidal nanoparticles on silicon. NANOTECHNOLOGY 2020; 31:374005. [PMID: 32460266 DOI: 10.1088/1361-6528/ab96e1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We present a comparative study of GaAs nanowire growth on Si(111) substrates by molecular beam epitaxy with the assistance of Au and Ag colloidal nanoparticles. Our approach allows the synthesis of nanowires with different catalyst materials in separate sectors of the same substrate within the same epitaxial process. We match the experimental results to the modeling of chemical potentials and nanowire length distributions to analyze the impact of silicon incorporation into the catalyst droplets on the growth rates and size homogeneity in ensembles of Au- and Ag-catalyzed GaAs nanowires.
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Affiliation(s)
- Yury Berdnikov
- ITMO University, Kronverkskiy 49, St. Petersburg, 197101 Russia
| | - Igor Ilkiv
- St. Petersburg Academic University, Khlopina 8/3, St. Petersburg, 194021 Russia
- St. Petersburg State University, Universitetskaya emb. 7/9, St. Petersburg, 199034 Russia
| | - Nickolay Sibirev
- St. Petersburg State University, Universitetskaya emb. 7/9, St. Petersburg, 199034 Russia
| | - Evgeniy Ubyivovk
- ITMO University, Kronverkskiy 49, St. Petersburg, 197101 Russia
- St. Petersburg State University, Universitetskaya emb. 7/9, St. Petersburg, 199034 Russia
| | - Alexei Bouravleuv
- St. Petersburg Academic University, Khlopina 8/3, St. Petersburg, 194021 Russia
- St. Petersburg Electrotechnical University, Prof. Popova 5, St. Petersburg, 197376 Russia
- Institute for Analytical Instrumentation RAS, Ivana Chernykh 31-33, St. Petersburg, 198095 Russia
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11
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Sun Q, Pan D, Li M, Zhao J, Chen P, Lu W, Zou J. In situ TEM observation of the vapor-solid-solid growth of <001[combining macron]> InAs nanowires. NANOSCALE 2020; 12:11711-11717. [PMID: 32452500 DOI: 10.1039/d0nr02892d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
In situ transmission electron microscopy characterization is a powerful method in investigating the growth mechanism of catalyst-induced semiconductor nanowires. By providing direct evidence on the crystal growth at the atomic level, a real-time in situ heating investigation was carried out on Au-catalyzed <001[combining macron]> InAs nanowires. It was found that the Au catalyst maintained itself in the solid form during the nanowire growth, and maintained a fixed epitaxial relationship with its underlying InAs nanowire, indicating the vapor-solid-solid mechanism. Importantly, the growth of <001[combining macron]> InAs nanowires through a layer-by-layer manner at the catalyst/nanowire interface is evident. This study provides direct insights into the vapor-solid-solid growth and clarified the growth mechanism of <001[combining macron]> III-V nanowires, which provides pathways in controlling the growth of <001[combining macron]> semiconductor nanowires.
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Affiliation(s)
- Qiang Sun
- Materials Engineering, The University of Queensland, St. Lucia, Queensland 4072, Australia.
| | - Dong Pan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Meng Li
- Materials Engineering, The University of Queensland, St. Lucia, Queensland 4072, Australia.
| | - Jianhua Zhao
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Pingping Chen
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Wei Lu
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Jin Zou
- Materials Engineering, The University of Queensland, St. Lucia, Queensland 4072, Australia. and Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia, Queensland 4072, Australia
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12
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Sun Q, Gao H, Zhang X, Yao X, Zheng K, Chen P, Lu W, Zou J. Free-Standing InAs Nanobelts Driven by Polarity in MBE. ACS APPLIED MATERIALS & INTERFACES 2019; 11:44609-44616. [PMID: 31684720 DOI: 10.1021/acsami.9b15575] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
In this study, we demonstrated the Au-catalyzed growth of free-standing defect-free zinc-blende structured InAs nanobelts on the GaAs {111}B substrate by molecular beam epitaxy. Through detailed morphological, chemical, and structural characterizations using advanced electron microscopy, it was found that the nanobelts grew along the ⟨001̅⟩ direction, induced by Au catalysts via vapor-solid-solid mechanism, with features of {001̅} catalyst/nanobelt interfaces and extensive {11̅0} surfaces. The formation of the belt-shaped morphology of our nanostructures resulted from a faster lateral growth rate along the ±[110] direction than that along the ±[11̅0] direction, driven by polarity. This study provides insights into understanding the growth of free-standing zinc-blende structured <001̅> InAs nanobelts.
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Affiliation(s)
| | | | - Xutao Zhang
- State Key Laboratory for Infrared Physics , Shanghai Institute of Technical Physics, Chinese Academy of Sciences , 500 Yutian Road , Shanghai 200083 , China
- University of Chinese Academy of Sciences , No. 19A Yuquan Road , Beijing 100049 , China
| | - Xiaomei Yao
- State Key Laboratory for Infrared Physics , Shanghai Institute of Technical Physics, Chinese Academy of Sciences , 500 Yutian Road , Shanghai 200083 , China
- University of Chinese Academy of Sciences , No. 19A Yuquan Road , Beijing 100049 , China
| | - Kun Zheng
- Institute of Microstructure and Properties of Advanced Materials , Beijing University of Technology , Beijing 100124 , China
| | - Pingping Chen
- State Key Laboratory for Infrared Physics , Shanghai Institute of Technical Physics, Chinese Academy of Sciences , 500 Yutian Road , Shanghai 200083 , China
| | - Wei Lu
- State Key Laboratory for Infrared Physics , Shanghai Institute of Technical Physics, Chinese Academy of Sciences , 500 Yutian Road , Shanghai 200083 , China
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13
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Dynamics Contributions to the Growth Mechanism of Ga 2O 3 Thin Film and NWs Enabled by Ag Catalyst. NANOMATERIALS 2019; 9:nano9091272. [PMID: 31500158 PMCID: PMC6781042 DOI: 10.3390/nano9091272] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/16/2019] [Revised: 08/31/2019] [Accepted: 09/03/2019] [Indexed: 11/16/2022]
Abstract
In the last few years, interest in the use of gallium oxide (Ga2O3) as a semiconductor for high power/high temperature devices and UV nano-sensors has grown. Ga2O3 has an enormous band gap of 4.8 eV, which makes it well suited for applications in harsh environments. In this work, we explored the effect of Ag thin film as a catalyst to grow gallium oxide. The growth of gallium oxide thin film and nanowires can be achieved by heating and oxidizing pure gallium at high temperatures (~1000 °C) in the presence of trace amounts of oxygen. We present the results of structural, morphological, and elemental characterization of the β-Ga2O3 thin film and nanowires. In addition, we explore and compare the sensing properties of the β-Ga2O3 thin film and nanowires for UV detection. The proposed process can be optimized to a high scale production Ga2O3 nanocrystalline thin film and nanowires. By using Ag thin film as a catalyst, we can control the growth parameters to obtain either nanocrystalline thin film or nanowires.
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14
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Barrigón E, Heurlin M, Bi Z, Monemar B, Samuelson L. Synthesis and Applications of III-V Nanowires. Chem Rev 2019; 119:9170-9220. [PMID: 31385696 DOI: 10.1021/acs.chemrev.9b00075] [Citation(s) in RCA: 79] [Impact Index Per Article: 15.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/27/2023]
Abstract
Low-dimensional semiconductor materials structures, where nanowires are needle-like one-dimensional examples, have developed into one of the most intensely studied fields of science and technology. The subarea described in this review is compound semiconductor nanowires, with the materials covered limited to III-V materials (like GaAs, InAs, GaP, InP,...) and III-nitride materials (GaN, InGaN, AlGaN,...). We review the way in which several innovative synthesis methods constitute the basis for the realization of highly controlled nanowires, and we combine this perspective with one of how the different families of nanowires can contribute to applications. One reason for the very intense research in this field is motivated by what they can offer to main-stream semiconductors, by which ultrahigh performing electronic (e.g., transistors) and photonic (e.g., photovoltaics, photodetectors or LEDs) technologies can be merged with silicon and CMOS. Other important aspects, also covered in the review, deals with synthesis methods that can lead to dramatic reduction of cost of fabrication and opportunities for up-scaling to mass production methods.
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Affiliation(s)
- Enrique Barrigón
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
| | - Magnus Heurlin
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden.,Sol Voltaics AB , Scheelevägen 63 , 223 63 Lund , Sweden
| | - Zhaoxia Bi
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
| | - Bo Monemar
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
| | - Lars Samuelson
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
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Hallberg RT, Messing ME, Dick KA. Nanowire morphology and particle phase control by tuning the In concentration of the foreign metal nanoparticle. NANOTECHNOLOGY 2019; 30:054005. [PMID: 30511656 DOI: 10.1088/1361-6528/aaefbe] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Controllable particle assisted growth (PAG) of III-V nanowires is today almost exclusively done with Au, Ga or In nanoparticles, whereas other metals often yield nanowires with uncontrolled growth directions. To improve the control of the initial growth direction in PAG, independent of choice of metal, we propose to initiate nanowire growth from a group-III-rich foreign metal particle. For III-V nanowire growth, the group III concentration of the particle can be made to increase or decrease with the relative supply of group III and group V material, which can be used to promote the liquid phase that is necessary for vapor-liquid-solid growth. In this paper, 30 nm Pd nanoparticles are used to develop growth conditions for In-rich PAG of InAs nanowires. The particle size evolution for different growth times and V/III ratios is correlated with changes in nanowire density and morphology. In addition, we demonstrate In-rich Co, Pd, Pt and Rh nanoparticles and optimized In-rich PAG from Au and Pd seeds. The Au and Pd seeded nanowires are remarkably similar and by tuning the particle composition we trigger a morphological change. The vertical nanowire morphology is associated with In-rich nanoparticles that contain a liquid phase. The curly nanowire morphology, with random growth directions have an In concentration less than or equal to that of the most In rich compound of the seed metal-In system.
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16
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Li Q, Jun YS. The apparent activation energy and pre-exponential kinetic factor for heterogeneous calcium carbonate nucleation on quartz. Commun Chem 2018. [DOI: 10.1038/s42004-018-0056-5] [Citation(s) in RCA: 25] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/06/2023] Open
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17
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Collar KN, Li J, Jiao W, Kong W, Brown AS. Unidirectional lateral nanowire formation during the epitaxial growth of GaAsBi on vicinal substrates. NANOTECHNOLOGY 2018; 29:035604. [PMID: 29186010 DOI: 10.1088/1361-6528/aa9e34] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
We report on enhanced control of the growth of lateral GaAs nanowires (NWs) embedded in epitaxial (100) GaAsBi thin films enabled by the use of vicinal substrates and the growth-condition dependent role of Bi as a surfactant. Enhanced step-flow growth is achieved through the use of vicinal substrates and yields unidirectional nanowire growth. The addition of Bi during GaAsBi growth enhances Ga adatom diffusion anisotropy and modifies incorporation rates at steps in comparison to GaAs growth yielding lower density but longer NWs. The NWs grown on vicinal substrates grew unidirectionally towards the misorientation direction when Bi was present. The III/V flux ratio significantly impacts the size, shape and density of the resulting NWs. These results suggest that utilizing growth conditions which enhance step-flow growth enable enhanced control of lateral nanostructures.
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Affiliation(s)
- Kristen N Collar
- Department of Physics, Duke University, Durham, NC 27708, United States of America
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18
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Oliveira DS, Zavarize M, Tizei LHG, Walls M, Ospina CA, Iikawa F, Ugarte D, Cotta MA. Different growth regimes in InP nanowire growth mediated by Ag nanoparticles. NANOTECHNOLOGY 2017; 28:505604. [PMID: 29099391 DOI: 10.1088/1361-6528/aa9816] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
We report on the existence of two different regimes in one-step Ag-seeded InP nanowire growth. The vapor-liquid-solid-mechanism is present at larger In precursor flows and temperatures, ∼500 °C, yielding high aspect ratio and pure wurtzite InP nanowires with a semi-spherical metal particle at the thin apex. Periodic diameter oscillations can be achieved under extreme In supersaturations at this temperature range, showing the presence of a liquid catalyst. However, under lower temperatures and In precursor flows, large diameter InP nanowires with mixed wurtzite/zincblende segments are obtained, similarly to In-assisted growth. Chemical composition analysis suggest that In-rich droplet formation is catalyzed at the substrate surface via Ag nanoparticles; this process might be facilitated by the sulfur contamination detected in these nanoparticles. Furthermore, part of the original Ag nanoparticle remains solid and is embedded inside the actual catalyst, providing an in situ method to switch growth mechanisms upon changing In precursor flow. Nevertheless, our Ag-seeded InP nanowires exhibit overall optical emission spectra consistent with the observed structural properties and similar to Au-catalyzed InP nanowires. We thus show that Ag nanoparticles may be a suitable replacement for Au in InP nanowire growth.
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Affiliation(s)
- D S Oliveira
- Gleb Wataghin Physics Institute, University of Campinas, 13083-859 Campinas, SP, Brazil
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19
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De Luca M, Rubini S, Felici M, Meaney A, Christianen PCM, Martelli F, Polimeni A. Addressing the Fundamental Electronic Properties of Wurtzite GaAs Nanowires by High-Field Magneto-Photoluminescence Spectroscopy. NANO LETTERS 2017; 17:6540-6547. [PMID: 29035544 DOI: 10.1021/acs.nanolett.7b02189] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
At ambient conditions, GaAs forms in the zincblende (ZB) phase with the notable exception of nanowires (NWs) where the wurtzite (WZ) lattice is also found. The WZ formation is both a complication to be dealt with and a potential feature to be exploited, for example, in NW homostructures wherein ZB and WZ phases alternate controllably and thus band gap engineering is achieved. Despite intense studies, some of the fundamental electronic properties of WZ GaAs NWs are not fully assessed yet. In this work, by using photoluminescence (PL) under high magnetic fields (B = 0-28 T), we measure the diamagnetic shift, ΔEd, and the Zeeman splitting of the band gap free exciton in WZ GaAs formed in core-shell InGaAs-GaAs NWs. The quantitative analysis of ΔEd at different temperatures (T = 4.2 and 77 K) and for different directions of B⃗ allows the determination of the exciton reduced mass, μexc, in planes perpendicular (μexc = 0.052 m0, where m0 is the electron mass in vacuum) and parallel (μexc = 0.057 m0) to the ĉ axis of the WZ lattice. The value and anisotropy of the exciton reduced mass are compatible with the electron lowest-energy state having Γ7C instead of Γ8C symmetry. This finding answers a long discussed issue about the correct ordering of the conduction band states in WZ GaAs. As for the Zeeman splitting, it varies considerably with the field direction, resulting in an exciton gyromagnetic factor equal to 5.4 and ∼0 for B⃗//ĉ and B⃗⊥ĉ, respectively. This latter result provides fundamental insight into the band structure of wurtzite GaAs.
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Affiliation(s)
- Marta De Luca
- Dipartimento di Fisica, Sapienza Università di Roma , 00185 Roma, Italy
- Department of Physics, University of Basel , Klingelbergstrasse 82, 4056 Basel, Switzerland
| | - Silvia Rubini
- Istituto Officina dei Materiali CNR , Basovizza 34149 Trieste, Italy
| | - Marco Felici
- Dipartimento di Fisica, Sapienza Università di Roma , 00185 Roma, Italy
| | - Alan Meaney
- High Field Magnet Laboratory (HFML - EMFL), Radboud University , NL-6525 ED Nijmegen, The Netherlands
| | - Peter C M Christianen
- High Field Magnet Laboratory (HFML - EMFL), Radboud University , NL-6525 ED Nijmegen, The Netherlands
| | - Faustino Martelli
- Istituto per la Microelettronica e i Microsistemi CNR , 00133 Roma, Italy
| | - Antonio Polimeni
- Dipartimento di Fisica, Sapienza Università di Roma , 00185 Roma, Italy
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Whiticar AM, Mårtensson EK, Nygård J, Dick KA, Bolinsson J. Annealing of Au, Ag and Au-Ag alloy nanoparticle arrays on GaAs (100) and (111)B. NANOTECHNOLOGY 2017; 28:205702. [PMID: 28445163 DOI: 10.1088/1361-6528/aa6aef] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
Metal nanoparticles (NPs), in particular gold NPs, are often used in the fabrication process of semiconductor nanowires. Besides being able to induce the 1D crystallization of new material, it is highly beneficial if the NPs can be used to dictate the position and diameter of the final nanowire structure. To achieve well-defined NP arrays of varying diameter and pitch distances for nanowire growth, it is necessary to understand and control the effect that a pre-growth annealing process may have on the pre-defined NP arrays. Recently, it has been demonstrated that silver (Ag) may be an alternative to using gold (Au) NPs as seed for particle-seeded nanowire fabrication. This work brings light onto the effect of annealing of Au, Ag and Au-Ag alloy metal NP arrays in two commonly used epitaxial systems, the molecular beam epitaxy (MBE) and the metalorganic vapor phase epitaxy (MOVPE). The metal NP arrays are fabricated with the aid of electron beam lithography on GaAs 100 and 111B wafers and the evolution of the NPs with respect to shape, size and position on the surfaces is studied after annealing using scanning electron microscopy. We find that while the Au NP arrays are found to be stable when annealed up to 600 °C in a MOVPE system, a diameter and pitch dependent splitting of the particles is seen for annealing in a MBE system. The Ag NP arrays are found to be less stable, with smaller diameters (≤50 nm) dissolving during the annealing process in both epitaxial systems. In general, the mobility of the NPs is observed to differ between the two the GaAs 100 and 111B surfaces. Finally, our observations on the effect of annealing on Au-Ag alloy NP arrays suggest that these NP can withstand necessary annealing conditions for a complete de-oxidation of GaAs surfaces in both MOVPE and MBE.
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Affiliation(s)
- Alexander M Whiticar
- Center for Quantum Devices & Nano-Science Center, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen, Denmark
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21
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Meyer-Holdt J, Kanne T, Sestoft JE, Gejl A, Zeng L, Johnson E, Olsson E, Nygård J, Krogstrup P. Ag-catalyzed InAs nanowires grown on transferable graphite flakes. NANOTECHNOLOGY 2016; 27:365603. [PMID: 27479073 DOI: 10.1088/0957-4484/27/36/365603] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Semiconducting nanowires grown by quasi-van-der-Waals epitaxy on graphite flakes are a new class of hybrid materials that hold promise for scalable nanostructured devices within opto-electronics. Here we report on high aspect ratio and stacking fault free Ag-seeded InAs nanowires grown on exfoliated graphite flakes by molecular beam epitaxy. Ag catalyzes the InAs nanowire growth selectively on the graphite flakes and not on the underlying InAs substrates. This allows for easy transfer of the flexible graphite flakes with as-grown nanowire ensembles to arbitrary substrates by a micro-needle manipulator. Besides the possibilities for fabricating novel nanostructure device designs, we show how this method is used to study the parasitic growth and bicrystal match between the graphite flake and the nanowires by transmission electron microscopy.
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Affiliation(s)
- Jakob Meyer-Holdt
- Nano-Science Center, Center for Quantum Devices and Station Q Copenhagen, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen, Denmark. University of Chinese Academy of Sciences, Sino-Danish Center for Education & Research (SDC), Beijing 100049, People's Republic of China
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