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Yang G, Kim Y, Jeon J, Lee M, Kim D, Kim S, Eom K, Lee H. Reversible Photomodulation of Two-Dimensional Electron Gas in LaAlO 3/SrTiO 3 Heterostructures. NANO LETTERS 2023. [PMID: 37418557 DOI: 10.1021/acs.nanolett.3c01076] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/09/2023]
Abstract
Long-lived photoinduced conductance changes in LaAlO3/SrTiO3 (LAO/STO) heterostructures enable their use in optoelectronic memory applications. However, it remains challenging to quench the persistent photoconductivity (PPC) instantly and reproducibly, which limits the reversible optoelectronic switching. Herein, we demonstrate a reversible photomodulation of two-dimensional electron gas (2DEG) in LAO/STO heterostructures with high reproducibility. By irradiating UV pulses, the 2DEG at the LAO/STO interface is gradually transformed to the PPC state. Notably, the PPC can be completely removed by water treatment when two key requirements are met: (1) the moderate oxygen deficiency in STO and (2) the minimal band edge fluctuation at the interface. Through our X-ray photoelectron spectroscopy and electrical noise analysis, we reveal that the reproducible change in the conductivity of 2DEG is directly attributed to the surface-driven electron relaxation in the STO. Our results provide a stepping-stone toward developing optically tunable memristive devices based on oxide 2DEG systems.
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Affiliation(s)
- Gyeongmo Yang
- Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
| | - Youngmin Kim
- Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
| | - Jaeyoung Jeon
- Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
| | - Minkyung Lee
- Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
| | - Doyeop Kim
- Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
| | - Sungkyu Kim
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, Republic of Korea
| | - Kitae Eom
- School of Advanced Materials science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Hyungwoo Lee
- Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
- Department of Physics, Ajou University, Suwon 16499, Republic of Korea
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2
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Tyagi S, Rout PC, Lüders U, Eckern U, Schwingenschlögl U. (LaCrO 3) m /SrCrO 3 superlattices as transparent p-type semiconductors with finite magnetization. NANOSCALE ADVANCES 2023; 5:1714-1721. [PMID: 36926555 PMCID: PMC10012850 DOI: 10.1039/d2na00656a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/24/2022] [Accepted: 02/07/2023] [Indexed: 06/18/2023]
Abstract
The electronic and magnetic properties of (LaCrO3) m /SrCrO3 superlattices are investigated using first principles calculations. We show that the magnetic moments in the two CrO2 layers sandwiching the SrO layer compensate each other for even m but give rise to a finite magnetization for odd m, which is explained by charge ordering with Cr3+ and Cr4+ ions arranged in a checkerboard pattern. The Cr4+ ions induce in-gap hole states at the interface, implying that the transparent superlattices are p-type semiconductors. The availability of transparent p-type semiconductors with finite magnetization enables the fabrication of transparent magnetic diodes and transistors, for example, with a multitude of potential technological applications.
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Affiliation(s)
- Shubham Tyagi
- Physical Sciences and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST) Thuwal 23955-6900 Saudi Arabia
| | - Paresh C Rout
- Physical Sciences and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST) Thuwal 23955-6900 Saudi Arabia
| | - Ulrike Lüders
- Laboratoire CRISMAT, UMR CNRS ENSICAEN 6508 14050 Caen France
| | - Ulrich Eckern
- Institut für Physik, Universität Augsburg 86135 Augsburg Germany
| | - Udo Schwingenschlögl
- Physical Sciences and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST) Thuwal 23955-6900 Saudi Arabia
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3
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Singh G, Lesne E, Winkler D, Claeson T, Bauch T, Lombardi F, Caviglia AD, Kalaboukhov A. Nanopatterning of Weak Links in Superconducting Oxide Interfaces. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:398. [PMID: 33557305 PMCID: PMC7914727 DOI: 10.3390/nano11020398] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/30/2020] [Revised: 01/22/2021] [Accepted: 01/28/2021] [Indexed: 11/16/2022]
Abstract
The interface between two wide band-gap insulators, LaAlO3 and SrTiO3 (LAO/STO), hosts a quasi-two-dimensional electron gas (q2DEG), two-dimensional superconductivity, ferromagnetism, and giant Rashba spin-orbit coupling. The co-existence of two-dimensional superconductivity with gate-tunable spin-orbit coupling and multiband occupation is of particular interest for the realization of unconventional superconducting pairing. To investigate the symmetry of the superconducting order parameter, phase sensitive measurements of the Josephson effect are required. We describe an approach for the fabrication of artificial superconducting weak links at the LAO/STO interface using direct high-resolution electron beam lithography and low-energy argon ion beam irradiation. The method does not require lift-off steps or sacrificial layers. Therefore, resolution is only limited by the electron beam lithography and pattern transfer. We have realized superconducting weak links with a barrier thickness of 30-100 nm. The barrier transparency of the weak links can be controlled by the irradiation dose and further tuned by a gate voltage. Our results open up new possibilities for the realization of quantum devices in oxide interfaces.
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Affiliation(s)
- Gyanendra Singh
- Department of Microtechnology and Nanoscience—MC2, Chalmers University of Technology, SE 412 96 Gothenburg, Sweden; (G.S.); (D.W.); (T.C.); (T.B.); (F.L.)
| | - Edouard Lesne
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands; (E.L.); (A.D.C.)
| | - Dag Winkler
- Department of Microtechnology and Nanoscience—MC2, Chalmers University of Technology, SE 412 96 Gothenburg, Sweden; (G.S.); (D.W.); (T.C.); (T.B.); (F.L.)
| | - Tord Claeson
- Department of Microtechnology and Nanoscience—MC2, Chalmers University of Technology, SE 412 96 Gothenburg, Sweden; (G.S.); (D.W.); (T.C.); (T.B.); (F.L.)
| | - Thilo Bauch
- Department of Microtechnology and Nanoscience—MC2, Chalmers University of Technology, SE 412 96 Gothenburg, Sweden; (G.S.); (D.W.); (T.C.); (T.B.); (F.L.)
| | - Floriana Lombardi
- Department of Microtechnology and Nanoscience—MC2, Chalmers University of Technology, SE 412 96 Gothenburg, Sweden; (G.S.); (D.W.); (T.C.); (T.B.); (F.L.)
| | - Andrea D. Caviglia
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands; (E.L.); (A.D.C.)
| | - Alexei Kalaboukhov
- Department of Microtechnology and Nanoscience—MC2, Chalmers University of Technology, SE 412 96 Gothenburg, Sweden; (G.S.); (D.W.); (T.C.); (T.B.); (F.L.)
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Bourlier Y, Bérini B, Frégnaux M, Fouchet A, Aureau D, Dumont Y. Transfer of Epitaxial SrTiO 3 Nanothick Layers Using Water-Soluble Sacrificial Perovskite Oxides. ACS APPLIED MATERIALS & INTERFACES 2020; 12:8466-8474. [PMID: 31971768 DOI: 10.1021/acsami.9b21047] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The integration of functional thin film materials with adaptable properties is essential for the development of new paradigms in information technology. Among them, complex oxides with perovskite structures have huge potential based on the particularly vast diversity of physical properties. Here, we demonstrate the possibility of transferring perovskite oxide materials like SrTiO3 onto a silicon substrate using an environmentally friendly process at the nanoscale by means of a water-soluble perovskite sacrificial layer, SrVO3. Based on in situ monitoring atomic force microscopy and photoemission studies, we reveal that the dissolution is initiated from a strontium-rich phase at the extreme surface of SrVO3. The nanothick SrTiO3-transferred layer onto silicon presents appropriate morphology and monocrystalline quality, providing a proof of concept for the integration and development of all-perovskite-oxide electronics or "oxitronics" onto any Si-based substrate.
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Affiliation(s)
- Yoan Bourlier
- Groupe d'Etude de la Matière Condensée (GEMaC) , Université de Versailles Saint-Quentin en Yvelines, Université Paris-Saclay CNRS , 45 Avenue des Etats-Unis , 78035 Versailles , France
- Institut Lavoisier de Versailles (ILV) , Université de Versailles Saint-Quentin en Yvelines, Université Paris-Saclay CNRS , 45 Avenue des Etats-Unis , 78035 Versailles , France
| | - Bruno Bérini
- Groupe d'Etude de la Matière Condensée (GEMaC) , Université de Versailles Saint-Quentin en Yvelines, Université Paris-Saclay CNRS , 45 Avenue des Etats-Unis , 78035 Versailles , France
| | - Mathieu Frégnaux
- Institut Lavoisier de Versailles (ILV) , Université de Versailles Saint-Quentin en Yvelines, Université Paris-Saclay CNRS , 45 Avenue des Etats-Unis , 78035 Versailles , France
| | - Arnaud Fouchet
- Normandie Univ, ENSICAEN, UNICAEN, CNRS, CRISMAT , 14000 Caen , France
| | - Damien Aureau
- Institut Lavoisier de Versailles (ILV) , Université de Versailles Saint-Quentin en Yvelines, Université Paris-Saclay CNRS , 45 Avenue des Etats-Unis , 78035 Versailles , France
| | - Yves Dumont
- Groupe d'Etude de la Matière Condensée (GEMaC) , Université de Versailles Saint-Quentin en Yvelines, Université Paris-Saclay CNRS , 45 Avenue des Etats-Unis , 78035 Versailles , France
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Dai W, Liang Y, Yang M, Schrecongost D, Gajurel P, Lee H, Lee JW, Chen J, Eom CB, Cen C. Large and Reconfigurable Infrared Photothermoelectric Effect at Oxide Interfaces. NANO LETTERS 2019; 19:7149-7154. [PMID: 31525937 DOI: 10.1021/acs.nanolett.9b02712] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
To maximize the photovoltaic efficiency, it is highly desirable to enable the electricity conversion from low energy photons and to extract the excessive energy from hot carriers. Here we report a large photovoltage generation at the LaAlO3/SrTiO3 interfaces from infrared photons with energies far below the oxide bandgaps. This effect is a result of the photoexcitation of hot carriers in metasurface electrical contacts and the subsequent thermoelectric charge separations by the interfacial two-dimensional electron gas (2DEG). Reaching a room-temperature responsivity of 4.4 V/W, such light-to-charge conversion can be spatially controlled and reconfigured through the patterning of 2DEG using conducting atomic force microscope. Compatible for broadband applications, our results demonstrate a new path toward efficient and programmable light sensing using oxide-based low-dimensional electron systems.
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Affiliation(s)
- Weitao Dai
- Department of Physics and Astronomy , West Virginia University , Morgantown , West Virginia 26506 , United States
| | - Yi Liang
- Department of Physics and Astronomy , West Virginia University , Morgantown , West Virginia 26506 , United States
- Guangxi Key Lab for Relativistic Astrophysics, Center on Nanoenergy Research, School of Physical Science and Technology , Guangxi University, Nanning , Guangxi 530004 , China
| | - Ming Yang
- Department of Physics and Astronomy , West Virginia University , Morgantown , West Virginia 26506 , United States
| | - Dustin Schrecongost
- Department of Physics and Astronomy , West Virginia University , Morgantown , West Virginia 26506 , United States
| | - Prakash Gajurel
- Department of Physics and Astronomy , West Virginia University , Morgantown , West Virginia 26506 , United States
| | - Hyungwoo Lee
- Department of Material Science and Engineering , University of Wisconsin-Madison , Madison , Wisconsin 53706 , United States
| | - Jung-Woo Lee
- Department of Material Science and Engineering , University of Wisconsin-Madison , Madison , Wisconsin 53706 , United States
| | - Jun Chen
- Department of Electrical and Computer Engineering and Peterson Institute of NanoScience and Engineering , University of Pittsburgh , Pittsburgh , Pennsylvania 15261 , United States
| | - Chang-Beom Eom
- Department of Material Science and Engineering , University of Wisconsin-Madison , Madison , Wisconsin 53706 , United States
| | - Cheng Cen
- Department of Physics and Astronomy , West Virginia University , Morgantown , West Virginia 26506 , United States
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6
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Electrostatic potential and valence modulation in La 0.7Sr 0.3MnO 3 thin films. Sci Rep 2018; 8:14313. [PMID: 30254275 PMCID: PMC6156561 DOI: 10.1038/s41598-018-32701-x] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/23/2018] [Accepted: 09/13/2018] [Indexed: 11/13/2022] Open
Abstract
The Mn valence in thin film La0.7Sr0.3MnO3 was studied as a function of film thickness in the range of 1–16 unit cells with a combination of non-destructive bulk and surface sensitive X-ray absorption spectroscopy techniques. Using a layer-by-layer valence model, it was found that while the bulk averaged valence hovers around its expected value of 3.3, a significant deviation occurs within several unit cells of the surface and interface. These results were supported by first principles calculations. The surface valence increases to up to Mn3.7+, whereas the interface valence reduces down to Mn2.5+. The change in valence from the expected bulk value is consistent with charge redistribution due to the polar discontinuity at the film-substrate interface. The comparison with theory employed here illustrates how this layer-by-layer valence evolves with film thickness and allows for a deeper understanding of the microscopic mechanisms at play in this effect. These results offer insight on how the two-dimensional electron gas is created in thin film oxide alloys and how the magnetic ordering is reduced with dimensionality.
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Pai YY, Tylan-Tyler A, Irvin P, Levy J. Physics of SrTiO 3-based heterostructures and nanostructures: a review. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2018; 81:036503. [PMID: 29424362 DOI: 10.1088/1361-6633/aa892d] [Citation(s) in RCA: 51] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/06/2023]
Abstract
This review provides a summary of the rich physics expressed within SrTiO3-based heterostructures and nanostructures. The intended audience is researchers who are working in the field of oxides, but also those with different backgrounds (e.g., semiconductor nanostructures). After reviewing the relevant properties of SrTiO3 itself, we will then discuss the basics of SrTiO3-based heterostructures, how they can be grown, and how devices are typically fabricated. Next, we will cover the physics of these heterostructures, including their phase diagram and coupling between the various degrees of freedom. Finally, we will review the rich landscape of quantum transport phenomena, as well as the devices that elicit them.
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Affiliation(s)
- Yun-Yi Pai
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, United States of America. Pittsburgh Quantum Institute, Pittsburgh, PA 15260, United States of America
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8
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Dai W, Yang M, Lee H, Lee JW, Eom CB, Cen C. Tailoring the Doping Mechanisms at Oxide Interfaces in Nanoscale. NANO LETTERS 2017; 17:5620-5625. [PMID: 28806520 DOI: 10.1021/acs.nanolett.7b02508] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Here, we demonstrate the nanoscale manipulations of two types of charge transfer to the LaAlO3/SrTiO3 interfaces: one from surface adsorbates and another from oxygen vacancies inside LaAlO3 films. This method can be used to produce multiple insulating and metallic interface states with distinct carrier properties that are highly stable in air. By reconfiguring the patterning and comparing interface structures formed from different doping sources, effects of extrinsic and intrinsic material characters on the transport properties can be distinguished. In particular, a multisubband to single-subband transition controlled by the structural phases in SrTiO3 was revealed. In addition, the transient behaviors of nanostructures also provided a unique opportunity to study the nanoscale diffusions of adsorbates and oxygen vacancies in oxide heterostructures. Knowledge of such dynamic processes is important for nanodevice implementations.
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Affiliation(s)
- Weitao Dai
- Department of Physics and Astronomy, West Virginia University , Morgantown, West Virginia 26506, United States
| | - Ming Yang
- Department of Physics and Astronomy, West Virginia University , Morgantown, West Virginia 26506, United States
| | - Hyungwoo Lee
- Department of Material Science and Engineering, University of Wisconsin-Madison , Madison, Wisconsin 53706, United States
| | - Jung-Woo Lee
- Department of Material Science and Engineering, University of Wisconsin-Madison , Madison, Wisconsin 53706, United States
| | - Chang-Beom Eom
- Department of Material Science and Engineering, University of Wisconsin-Madison , Madison, Wisconsin 53706, United States
| | - Cheng Cen
- Department of Physics and Astronomy, West Virginia University , Morgantown, West Virginia 26506, United States
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9
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Vaz DC, Lesne E, Sander A, Naganuma H, Jacquet E, Santamaria J, Barthélémy A, Bibes M. Tuning Up or Down the Critical Thickness in LaAlO 3 /SrTiO 3 through In Situ Deposition of Metal Overlayers. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017; 29:1700486. [PMID: 28505388 DOI: 10.1002/adma.201700486] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/24/2017] [Revised: 03/28/2017] [Indexed: 06/07/2023]
Abstract
The quasi 2D electron system (q2DES) that forms at the interface between LaAlO3 and SrTiO3 has attracted much attention from the oxide electronics community. One of its hallmark features is the existence of a critical LaAlO3 thickness of 4 unit-cells (uc) for interfacial conductivity to emerge. In this paper, the chemical, electronic, and transport properties of LaAlO3 /SrTiO3 samples capped with different metals grown in a system combining pulsed laser deposition, sputtering, and in situ X-ray photoemission spectroscopy are investigated. The results show that for metals with low work function a q2DES forms at 1-2 uc of LaAlO3 and is accompanied by a partial oxidation of the metal, a phenomenon that affects the q2DES properties and triggers the formation of defects. In contrast, for noble metals, the critical thickness is increased above 4 uc. The results are discussed in terms of a hybrid mechanism that incorporates electrostatic and chemical effects.
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Affiliation(s)
- Diogo Castro Vaz
- Unité Mixte de Physique UMR 137 CNRS/Thales, Université Paris-Sud, Université Paris-Saclay, 91767, Palaiseau, France
| | - Edouard Lesne
- Unité Mixte de Physique UMR 137 CNRS/Thales, Université Paris-Sud, Université Paris-Saclay, 91767, Palaiseau, France
| | - Anke Sander
- Unité Mixte de Physique UMR 137 CNRS/Thales, Université Paris-Sud, Université Paris-Saclay, 91767, Palaiseau, France
| | - Hiroshi Naganuma
- Unité Mixte de Physique UMR 137 CNRS/Thales, Université Paris-Sud, Université Paris-Saclay, 91767, Palaiseau, France
- Department of Applied Physics, Graduate School of Engineering, Tohoku University, Sendai, 980-8579, Japan
| | - Eric Jacquet
- Unité Mixte de Physique UMR 137 CNRS/Thales, Université Paris-Sud, Université Paris-Saclay, 91767, Palaiseau, France
| | - Jacobo Santamaria
- Unité Mixte de Physique UMR 137 CNRS/Thales, Université Paris-Sud, Université Paris-Saclay, 91767, Palaiseau, France
- Instituto de Magnetismo Aplicado, Universidad Complutense de Madrid, 28040, Madrid, Spain
| | - Agnès Barthélémy
- Unité Mixte de Physique UMR 137 CNRS/Thales, Université Paris-Sud, Université Paris-Saclay, 91767, Palaiseau, France
| | - Manuel Bibes
- Unité Mixte de Physique UMR 137 CNRS/Thales, Université Paris-Sud, Université Paris-Saclay, 91767, Palaiseau, France
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Monteiro AMRVL, Groenendijk DJ, Manca N, Mulazimoglu E, Goswami S, Blanter Y, Vandersypen LMK, Caviglia AD. Side Gate Tunable Josephson Junctions at the LaAlO 3/SrTiO 3 Interface. NANO LETTERS 2017; 17:715-720. [PMID: 28071920 PMCID: PMC5343548 DOI: 10.1021/acs.nanolett.6b03820] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/12/2016] [Revised: 01/07/2017] [Indexed: 05/22/2023]
Abstract
Novel physical phenomena arising at the interface of complex oxide heterostructures offer exciting opportunities for the development of future electronic devices. Using the prototypical LaAlO3/SrTiO3 interface as a model system, we employ a single-step lithographic process to realize gate-tunable Josephson junctions through a combination of lateral confinement and local side gating. The action of the side gates is found to be comparable to that of a local back gate, constituting a robust and efficient way to control the properties of the interface at the nanoscale. We demonstrate that the side gates enable reliable tuning of both the normal-state resistance and the critical (Josephson) current of the constrictions. The conductance and Josephson current show mesoscopic fluctuations as a function of the applied side gate voltage, and the analysis of their amplitude enables the extraction of the phase coherence and thermal lengths. Finally, we realize a superconducting quantum interference device in which the critical currents of each of the constriction-type Josephson junctions can be controlled independently via the side gates.
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Abstract
The thermoelectric properties of the (001) n-type 6.5STO/1.5LAO interface were investigated by means of the all-electron full-potential method based on the semi-classical Boltzmann theory.
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Affiliation(s)
- A. H. Reshak
- New Technologies – Research Centre
- University of West Bohemia
- 306 14 Pilsen
- Czech Republic
- School of Material Engineering
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