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Villeneuve-Faure C, Boumaarouf A, Shah V, Gammon PM, Lüders U, Coq Germanicus R. SiC Doping Impact during Conducting AFM under Ambient Atmosphere. Materials (Basel) 2023; 16:5401. [PMID: 37570104 PMCID: PMC10419843 DOI: 10.3390/ma16155401] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2023] [Revised: 07/25/2023] [Accepted: 07/28/2023] [Indexed: 08/13/2023]
Abstract
The characterization of silicon carbide (SiC) by specific electrical atomic force microscopy (AFM) modes is highly appreciated for revealing its structure and properties at a nanoscale. However, during the conductive AFM (C-AFM) measurements, the strong electric field that builds up around and below the AFM conductive tip in ambient atmosphere may lead to a direct anodic oxidation of the SiC surface due to the formation of a water nanomeniscus. In this paper, the underlying effects of the anodization are experimentally investigated for SiC multilayers with different doping levels by studying gradual SiC epitaxial-doped layers with nitrogen (N) from 5 × 1017 to 1019 at/cm3. The presence of the water nanomeniscus is probed by the AFM and analyzed with the force-distance curve when a negative bias is applied to the AFM tip. From the water meniscus breakup distance measured without and with polarization, the water meniscus volume is increased by a factor of three under polarization. AFM experimental results are supported by electrostatic modeling to study oxide growth. By taking into account the presence of the water nanomeniscus, the surface oxide layer and the SiC doping level, a 2D-axisymmetric finite element model is developed to calculate the electric field distribution nearby the tip contact and the current distributions at the nanocontact. The results demonstrate that the anodization occurred for the conductive regime in which the current depends strongly to the doping; its threshold value is 7 × 1018 at/cm3 for anodization. Finally, the characterization of a classical planar SiC-MOSFET by C-AFM is examined. Results reveal the local oxidation mechanism of the SiC material at the surface of the MOSFET structure. AFM topographies after successive C-AFM measurements show that the local oxide created by anodization is located on both sides of the MOS channel; these areas are the locations of the highly n-type-doped zones. A selective wet chemical etching confirms that the oxide induced by local anodic oxidation is a SiOCH layer.
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Affiliation(s)
- Christina Villeneuve-Faure
- LAPLACE (Laboratoire Plasma et Conversion d’Energie), Université de Toulouse, CNRS, UPS, INPT, 118 Route de Narbonne, CEDEX 9, 31062 Toulouse, France;
| | - Abdelhaq Boumaarouf
- CRISMAT UMR6508 (Laboratoire de Cristallographie et Sciences des Matériaux), Normandie University, Ensicaen, Unicaen, CNRS, 14000 Caen, France; (A.B.); (U.L.)
| | - Vishal Shah
- School of Engineering, University of Warwick, Coventry CV4 7AL, UK; (V.S.); (P.M.G.)
| | - Peter M. Gammon
- School of Engineering, University of Warwick, Coventry CV4 7AL, UK; (V.S.); (P.M.G.)
| | - Ulrike Lüders
- CRISMAT UMR6508 (Laboratoire de Cristallographie et Sciences des Matériaux), Normandie University, Ensicaen, Unicaen, CNRS, 14000 Caen, France; (A.B.); (U.L.)
| | - Rosine Coq Germanicus
- CRISMAT UMR6508 (Laboratoire de Cristallographie et Sciences des Matériaux), Normandie University, Ensicaen, Unicaen, CNRS, 14000 Caen, France; (A.B.); (U.L.)
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Rath M, Mezhoud M, El Khaloufi O, Lebedev O, Cardin J, Labbé C, Gourbilleau F, Polewczyk V, Vinai G, Torelli P, Fouchet A, David A, Prellier W, Lüders U. Artificial Aging of Thin Films of the Indium-Free Transparent Conducting Oxide SrVO 3. ACS Appl Mater Interfaces 2023; 15:20240-20251. [PMID: 37067020 DOI: 10.1021/acsami.3c02421] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
SrVO3 (SVO) is a prospective candidate to replace the conventional indium tin oxide (ITO) among the new generation of transparent conducting oxide (TCO) materials. In this study, the structural, electrical, and optical properties of SVO thin films, both epitaxial and polycrystalline, are determined during and after heat treatments in the 150-250 °C range and under ambient environment in order to explore the chemical stability of this material. The use of these relatively low temperatures speeds up the natural aging of the films and allows following the evolution of their related properties. The combination of techniques rather sensitive to the film surface and of techniques sampling the film volume will emphasize the presence of a surface oxidation evolving in time at low annealing temperatures, whereas the perovskite phase is destroyed throughout the film for treatments above 200 °C. The present study is designed to understand the thermal degradation and long-term stability issues of vanadate-based TCOs and to identify technologically viable solutions for the application of this group as new TCOs.
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Affiliation(s)
- Martando Rath
- Normandie Univ, ENSICAEN, UNICAEN, CNRS, CRISMAT, 6, boulevard du Maréchal Juin, F-14050 Caen, France
| | - Moussa Mezhoud
- Normandie Univ, ENSICAEN, UNICAEN, CNRS, CRISMAT, 6, boulevard du Maréchal Juin, F-14050 Caen, France
| | - Oualyd El Khaloufi
- Normandie Univ, ENSICAEN, UNICAEN, CNRS, CRISMAT, 6, boulevard du Maréchal Juin, F-14050 Caen, France
| | - Oleg Lebedev
- Normandie Univ, ENSICAEN, UNICAEN, CNRS, CRISMAT, 6, boulevard du Maréchal Juin, F-14050 Caen, France
| | - Julien Cardin
- CIMAP, CNRS, ENSICAEN, UNICAEN, Normandie Univ, 6, boulevard du Maréchal Juin, F-14050 Caen, France
| | - Christophe Labbé
- CIMAP, CNRS, ENSICAEN, UNICAEN, Normandie Univ, 6, boulevard du Maréchal Juin, F-14050 Caen, France
| | - Fabrice Gourbilleau
- CIMAP, CNRS, ENSICAEN, UNICAEN, Normandie Univ, 6, boulevard du Maréchal Juin, F-14050 Caen, France
| | - Vincent Polewczyk
- Istituto Officina dei Materiali (IOM)-CNR, Laboratorio TASC, Area Science Park, S.S.14, km 163.5, I-34149 Trieste, Italy
| | - Giovanni Vinai
- Istituto Officina dei Materiali (IOM)-CNR, Laboratorio TASC, Area Science Park, S.S.14, km 163.5, I-34149 Trieste, Italy
| | - Piero Torelli
- Istituto Officina dei Materiali (IOM)-CNR, Laboratorio TASC, Area Science Park, S.S.14, km 163.5, I-34149 Trieste, Italy
| | - Arnaud Fouchet
- Normandie Univ, ENSICAEN, UNICAEN, CNRS, CRISMAT, 6, boulevard du Maréchal Juin, F-14050 Caen, France
| | - Adrian David
- Normandie Univ, ENSICAEN, UNICAEN, CNRS, CRISMAT, 6, boulevard du Maréchal Juin, F-14050 Caen, France
| | - Wilfrid Prellier
- Normandie Univ, ENSICAEN, UNICAEN, CNRS, CRISMAT, 6, boulevard du Maréchal Juin, F-14050 Caen, France
| | - Ulrike Lüders
- Normandie Univ, ENSICAEN, UNICAEN, CNRS, CRISMAT, 6, boulevard du Maréchal Juin, F-14050 Caen, France
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Tyagi S, Rout PC, Lüders U, Eckern U, Schwingenschlögl U. (LaCrO 3) m /SrCrO 3 superlattices as transparent p-type semiconductors with finite magnetization. Nanoscale Adv 2023; 5:1714-1721. [PMID: 36926555 PMCID: PMC10012850 DOI: 10.1039/d2na00656a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/24/2022] [Accepted: 02/07/2023] [Indexed: 06/18/2023]
Abstract
The electronic and magnetic properties of (LaCrO3) m /SrCrO3 superlattices are investigated using first principles calculations. We show that the magnetic moments in the two CrO2 layers sandwiching the SrO layer compensate each other for even m but give rise to a finite magnetization for odd m, which is explained by charge ordering with Cr3+ and Cr4+ ions arranged in a checkerboard pattern. The Cr4+ ions induce in-gap hole states at the interface, implying that the transparent superlattices are p-type semiconductors. The availability of transparent p-type semiconductors with finite magnetization enables the fabrication of transparent magnetic diodes and transistors, for example, with a multitude of potential technological applications.
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Affiliation(s)
- Shubham Tyagi
- Physical Sciences and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST) Thuwal 23955-6900 Saudi Arabia
| | - Paresh C Rout
- Physical Sciences and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST) Thuwal 23955-6900 Saudi Arabia
| | - Ulrike Lüders
- Laboratoire CRISMAT, UMR CNRS ENSICAEN 6508 14050 Caen France
| | - Ulrich Eckern
- Institut für Physik, Universität Augsburg 86135 Augsburg Germany
| | - Udo Schwingenschlögl
- Physical Sciences and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST) Thuwal 23955-6900 Saudi Arabia
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Rengifo M, Aguirre MH, Sirena M, Lüders U, Rubi D. Epitaxial ferroelectric memristors integrated with silicon. Front Nanotechnol 2022. [DOI: 10.3389/fnano.2022.1092177] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2022] Open
Abstract
Neuromorphic computing requires the development of solid-state units able to electrically mimic the behavior of biological neurons and synapses. This can be achieved by developing memristive systems based on ferroelectric oxides. In this work we fabricate and characterize high quality epitaxial BaTiO3-based memristors integrated with silicon. After proving the ferroelectric character of BaTiO3 we tested the memristive response of LaNiO3/BaTiO3/Pt microstructures and found a complex behavior which includes the co-existence of volatile and non-volatile effects, arising from the modulation of the BaTiO3/Pt Schottky interface by the direction of the polarization coupled to oxygen vacancy electromigration to/from the interface. This produces remanent resistance loops with tunable ON/OFF ratio and asymmetric resistance relaxations. These properties might be harnessed for the development of neuromorphic hardware compatible with existing silicon-based technology.
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Leal Martir R, José Sánchez M, Aguirre M, Quiñonez W, Ferreyra C, Acha C, Lecourt J, Lüders U, Rubi D. Oxygen vacancy dynamics in Pt/TiO x/TaO y/Pt memristors: exchange with the environment and internal electromigration. Nanotechnology 2022; 34:095202. [PMID: 36541534 DOI: 10.1088/1361-6528/aca597] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/01/2022] [Accepted: 11/24/2022] [Indexed: 06/17/2023]
Abstract
Memristors are expected to be one of the key building blocks for the development of new bio-inspired nanoelectronics. Memristive effects in transition metal oxides are usually linked to the electromigration at the nanoscale of charged oxygen vacancies (OV). In this paper we address, for Pt/TiOx/TaOy/Pt devices, the exchange of OV between the device and the environment upon the application of electrical stress. From a combination of experiments and theoretical simulations we determine that both TiOxand TaOylayers oxidize, via environmental oxygen uptake, during the electroforming process. Once the memristive effect is stabilized (post-forming behavior) our results suggest that oxygen exchange with the environment is suppressed and the OV dynamics that drives the memristive behavior is restricted to an internal electromigration between TiOxand TaOylayers. Our work provides relevant information for the design of reliable binary oxide memristive devices.
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Affiliation(s)
- Rodrigo Leal Martir
- Departamento de Micro y Nanotecnologías, Centro Atómico Constituyentes, Comisión Nacional de Energía Atómica, Gral Paz. 1499 (1650), San Martín, Argentina
- Instituto de Nanociencia y Nanotecnología (INN), CONICET-CNEA, Buenos Aires and Bariloche, Argentina
| | - María José Sánchez
- Instituto de Nanociencia y Nanotecnología (INN), CONICET-CNEA, Buenos Aires and Bariloche, Argentina
- Centro Atómico Bariloche and Instituto Balseiro (Universidad Nacional de Cuyo), 8400 San Carlos de Bariloche, Río Negro, Argentina
| | - Myriam Aguirre
- Instituto de Nanociencia y Materiales de Aragón (INMA-CSIC) and Dpto. de Física de la Materia Condensada, Universidad de Zaragoza, Spain
- Laboratorio de Microscopías Avanzadas, Edificio I + D, Campus Rio Ebro C/Mariano Esquillor s/n, E-50018 Zaragoza, Spain
| | - Walter Quiñonez
- Departamento de Micro y Nanotecnologías, Centro Atómico Constituyentes, Comisión Nacional de Energía Atómica, Gral Paz. 1499 (1650), San Martín, Argentina
- Instituto de Nanociencia y Nanotecnología (INN), CONICET-CNEA, Buenos Aires and Bariloche, Argentina
| | - Cristian Ferreyra
- Departamento de Micro y Nanotecnologías, Centro Atómico Constituyentes, Comisión Nacional de Energía Atómica, Gral Paz. 1499 (1650), San Martín, Argentina
- Instituto de Nanociencia y Nanotecnología (INN), CONICET-CNEA, Buenos Aires and Bariloche, Argentina
| | - Carlos Acha
- Depto. de Física, FCEyN, Universidad de Buenos Aires and IFIBA, UBA-CONICET, Pab I, Ciudad Universitaria, Buenos Aires (1428), Argentina
| | - Jerome Lecourt
- CRISMAT, CNRS UMR 6508, ENSICAEN, 6 Boulevard Maréchal Juin, F-14050 Caen Cedex 4, France
| | - Ulrike Lüders
- CRISMAT, CNRS UMR 6508, ENSICAEN, 6 Boulevard Maréchal Juin, F-14050 Caen Cedex 4, France
| | - Diego Rubi
- Departamento de Micro y Nanotecnologías, Centro Atómico Constituyentes, Comisión Nacional de Energía Atómica, Gral Paz. 1499 (1650), San Martín, Argentina
- Instituto de Nanociencia y Nanotecnología (INN), CONICET-CNEA, Buenos Aires and Bariloche, Argentina
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Vinci D, Lüders U, Guillaume C, Lemrhari M, Le Cornec F, Chateigner D. Structure, texture and residual strain in Al/W/Al heterostructures. Acta Cryst Sect A 2022. [DOI: 10.1107/s2053273322092233] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/19/2023]
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Coq Germanicus R, Lallemand F, Chateigner D, Jouha W, Moultif N, Latry O, Fouchet A, Murray H, Bunel C, Lüders U. Dopant activity for highly in-situ doped polycrystalline silicon: hall, XRD, scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM). Nano Ex 2021. [DOI: 10.1088/2632-959x/abed3e] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
Abstract
Abstract
Progressing miniaturization and the development of semiconductor integrated devices ask for advanced characterizations of the different device components with ever-increasing accuracy. Particularly in highly doped layers, a fine control of local conduction is essential to minimize access resistances and optimize integrated devices. For this, electrical Atomic Force Microscopy (AFM) are useful tools to examine the local properties at nanometric scale, for the fundamental understanding of the layer conductivity, process optimization during the device fabrication and reliability issues. By using Scanning Capacitance Microscopy (SCM) and Scanning Spreading Resistance Microscopy (SSRM), we investigate a highly in situ doped polycrystalline silicon layer, a material where the electrical transport properties are well known. This film is deposited on a oxide layer as a passivating contact. The study of the nano-MIS (SCM) and nano-Schottky (SSRM) contacts allows to determine the distribution and homogeneity of the carrier concentration (active dopants), especially by investigating the redistribution of the dopants after an annealing step used for their activation. While the chemical analysis by Secondary Ions Mass Spectroscopy (SIMS) quantifies only the dopant concentration in the polycrystalline layer, the comparison with macroscopic characterization techniques as Hall effect measurements, supported with XRD characterization, shows that careful SCM and SSRM measurements can be used to highlight the dopant activation. This analysis gives a complete investigation of the local electrical properties of the passivating contact when the parameters (applied voltages and applied forces) of the AFM nano-contacts are correctly controlled.
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Coq Germanicus R, De Wolf P, Lallemand F, Bunel C, Bardy S, Murray H, Lüders U. Mapping of integrated PIN diodes with a 3D architecture by scanning microwave impedance microscopy and dynamic spectroscopy. Beilstein J Nanotechnol 2020; 11:1764-1775. [PMID: 33299736 PMCID: PMC7705862 DOI: 10.3762/bjnano.11.159] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/25/2020] [Accepted: 11/07/2020] [Indexed: 06/12/2023]
Abstract
This work addresses the need for a comprehensive methodology for nanoscale electrical testing dedicated to the analysis of both "front end of line" (FEOL) (doped semiconducting layers) and "back end of line" (BEOL) layers (metallization, trench dielectric, and isolation) of highly integrated microelectronic devices. Based on atomic force microscopy, an electromagnetically shielded and electrically conductive tip is used in scanning microwave impedance microscopy (sMIM). sMIM allows for the characterization of the local electrical properties through the analysis of the microwave impedance of the metal-insulator-semiconductor nanocapacitor (nano-MIS capacitor) that is formed by tip and sample. A highly integrated monolithic silicon PIN diode with a 3D architecture is analysed. sMIM measurements of the different layers of the PIN diode are presented and discussed in terms of detection mechanism, sensitivity, and precision. In the second part, supported by analytic calculations of the equivalent nano-MIS capacitor, a new multidimensional approach, including a complete parametric investigation, is performed with a dynamic spectroscopy method. The results emphasize the strong impact, in terms of distinction and location, of the applied bias on the local sMIM measurements for both FEOL and BEOL layers.
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Affiliation(s)
| | - Peter De Wolf
- Bruker Nano Surfaces, 112 Robin Hill Road, CA 93117, Santa Barbara, USA
| | - Florent Lallemand
- Murata Integrated Passive Solutions, 2 Rue de la Girafe, 14000 Caen, France
| | - Catherine Bunel
- Murata Integrated Passive Solutions, 2 Rue de la Girafe, 14000 Caen, France
| | - Serge Bardy
- NXP Semiconductors, Esplanade Anton Philips 2, 14905, Colombelles, France
| | - Hugues Murray
- Normandie Université, ENSICAEN, UNICAEN, CNRS, CRISMAT, 14000 Caen, France
| | - Ulrike Lüders
- Normandie Université, ENSICAEN, UNICAEN, CNRS, CRISMAT, 14000 Caen, France
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Ferreyra C, Sánchez MJ, Aguirre M, Acha C, Bengió S, Lecourt J, Lüders U, Rubi D. Selective activation of memristive interfaces in TaO x -based devices by controlling oxygen vacancies dynamics at the nanoscale. Nanotechnology 2020; 31:155204. [PMID: 31860894 DOI: 10.1088/1361-6528/ab6476] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The development of novel devices for neuromorphic computing and non-traditional logic operations largely relies on the fabrication of well controlled memristive systems with functionalities beyond standard bipolar behavior and digital ON-OFF states. In the present work we demonstrate for Ta2O5-based devices that it is possible to selectively activate/deactivate two series memristive interfaces in order to obtain clockwise or counter-clockwise multilevel squared remanent resistance loops, just by controlling both the electroforming process and the (a)symmetry of the applied stimuli, and independently of the nature of the used metallic electrodes. Based on our thorough characterization, analysis and modeling, we show that the physical origin of this electrical behavior relies on controlled oxygen vacancies electromigration between three different nanoscopic zones of the active Ta2O5-x layer: a central one and two quasi-symmetric interfaces with reduced TaO2-h(y) layers. Our devices fabrication process is rather simple as it implies the room temperature deposition of only one CMOS compatible oxide-Ta-oxide-and one metal, suggesting that it might be possible to take advantage of these properties at low cost and with easy scability. The tunable opposite remanent resistance loops circulations with multiple-analogic-intermediate stable states allows mimicking the adaptable synaptic weight of biological systems and presents potential for non-standard logic devices.
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Affiliation(s)
- C Ferreyra
- GIyA and INN-CONICET, CNEA, Av. Gral Paz 1499 (1650), San Martín, Buenos Aires, Argentina
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Boileau A, Dallocchio M, Baudouin F, David A, Lüders U, Mercey B, Pautrat A, Demange V, Guilloux-Viry M, Prellier W, Fouchet A. Textured Manganite Films Anywhere. ACS Appl Mater Interfaces 2019; 11:37302-37312. [PMID: 31512470 DOI: 10.1021/acsami.9b12209] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
New paradigms are required in microelectronics when the transistor is in its downscaling limit and integration of materials presenting functional properties not available in classical silicon is one of the promising alternatives. Here, we demonstrate the possibility to grow La0.67Sr0.33MnO3 (LSMO) functional materials on amorphous substrates with properties close to films grown on single-crystalline substrates using a two-dimensional seed layer. X-ray diffraction and electron backscatter diffraction mapping demonstrate that the Ca2Nb3O10- nanosheet (NS) layer induces epitaxial stabilization of LSMO films with a strong out-of-plane (001) texture, whereas the growth of LSMO films on uncoated glass substrates exhibits a nontextured polycrystalline phase. The magnetic properties of LSMO films deposited on NS are similar to those of the LSMO grown on SrTiO3 single-crystal substrates in the same conditions (which is used as a reference in this work). Moreover, transport measurements take advantages of the texture and polycrystalline properties to induce low-field magnetoresistance at low temperature and also a high value of 40% magnetoresistance from 10 to 300 K, making it interesting for sensor applications. Therefore, the NS seed layer offers new perspectives for the integration of functional materials grown at moderate temperatures on any substrate, which will be the key for the development of oxitronics.
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Affiliation(s)
- Alexis Boileau
- Normandie Univ, ENSICAEN, UNICAEN, CNRS, CRISMAT , 14000 Caen , France
| | - Marie Dallocchio
- Normandie Univ, ENSICAEN, UNICAEN, CNRS, CRISMAT , 14000 Caen , France
| | - Florent Baudouin
- ISCR Univ Rennes, CNRS, ISCR-UMR 6226, ScanMAT-UMS 2001 , F-35000 Rennes , France
| | - Adrian David
- Normandie Univ, ENSICAEN, UNICAEN, CNRS, CRISMAT , 14000 Caen , France
| | - Ulrike Lüders
- Normandie Univ, ENSICAEN, UNICAEN, CNRS, CRISMAT , 14000 Caen , France
| | - Bernard Mercey
- Normandie Univ, ENSICAEN, UNICAEN, CNRS, CRISMAT , 14000 Caen , France
| | - Alain Pautrat
- Normandie Univ, ENSICAEN, UNICAEN, CNRS, CRISMAT , 14000 Caen , France
| | - Valérie Demange
- ISCR Univ Rennes, CNRS, ISCR-UMR 6226, ScanMAT-UMS 2001 , F-35000 Rennes , France
| | | | - Wilfrid Prellier
- Normandie Univ, ENSICAEN, UNICAEN, CNRS, CRISMAT , 14000 Caen , France
| | - Arnaud Fouchet
- Normandie Univ, ENSICAEN, UNICAEN, CNRS, CRISMAT , 14000 Caen , France
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Kahouli A, Elbahri MB, Lebedev O, Lüders U. Capacitance-voltage characteristics of sub-nanometric Al 2O 3 / TiO 2 laminates: dielectric and interface charge densities. J Phys Condens Matter 2017; 29:275301. [PMID: 28569244 DOI: 10.1088/1361-648x/aa7237] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Advanced amorphous sub-nanometric laminates based on TiO2 and Al2O3 were deposited by atomic layer deposition at low temperature. Low densities of 'slow' and 'fast' interface states are achieved with values of 3.96 · 1010 cm-2 and 4.85 · 10-9 eV-1 cm-2, respectively, by using a 40 nm laminate constituted of 0.7 nm TiO2 and 0.8 nm Al2O3. The sub-nanometric laminate shows a low hysteresis width of 20 mV due to the low oxide charge density of about 3.72 · 1011 cm-2. Interestingly, such properties are required for stable and reliable performance of MOS capacitors and transistor operation. Thus, decreasing the individual layer thickness to the sub-nanometric range and combining two dielectric materials with oppositely charged defects may play a major role in the electrical response, highly promising for the application in future micro and nano-electronics applications.
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Kahouli A, Lebedev O, Ben Elbahri M, Mercey B, Prellier W, Riedel S, Czernohorsky M, Lallemand F, Bunel C, Lüders U. Structural and Dielectric Properties of Subnanometric Laminates of Binary Oxides. ACS Appl Mater Interfaces 2015; 7:25679-25684. [PMID: 26523935 DOI: 10.1021/acsami.5b06485] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Capacitors with a dielectric material consisting of amorphous laminates of Al2O3 and TiO2 with subnanometer individual layer thicknesses can show strongly enhanced capacitance densities compared to the bulk or laminates with nanometer layer thickness. In this study, the structural and dielectric properties of such subnanometer laminates grown on silicon by state-of-the-art atomic layer deposition are investigated with varying electrode materials. The laminates show a dielectric constant reaching 95 combined with a dielectric loss (tan δ) of about 0.2. The differences of the observed dielectric properties in capacitors with varying electrodes indicate that chemical effects at the interface with the TiN electrode play a major role, while the influence of the local roughness of the individual layers is rather limited.
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Affiliation(s)
- Abdelkader Kahouli
- CRISMAT, UMR 6508, CNRS-ENSICAEN, Normandie Université , 6 Blvd Maréchal Juin, 14000 Caen Cedex, France
| | - Oleg Lebedev
- CRISMAT, UMR 6508, CNRS-ENSICAEN, Normandie Université , 6 Blvd Maréchal Juin, 14000 Caen Cedex, France
| | - Marwa Ben Elbahri
- CRISMAT, UMR 6508, CNRS-ENSICAEN, Normandie Université , 6 Blvd Maréchal Juin, 14000 Caen Cedex, France
| | - Bernard Mercey
- CRISMAT, UMR 6508, CNRS-ENSICAEN, Normandie Université , 6 Blvd Maréchal Juin, 14000 Caen Cedex, France
| | - Wilfrid Prellier
- CRISMAT, UMR 6508, CNRS-ENSICAEN, Normandie Université , 6 Blvd Maréchal Juin, 14000 Caen Cedex, France
| | - Stefan Riedel
- Center Nanoelectronic Technologies, Fraunhofer Institute for Photonic Microsystems , Königsbrücker Strasse 178, 01099 Dresden, Germany
| | - Malte Czernohorsky
- Center Nanoelectronic Technologies, Fraunhofer Institute for Photonic Microsystems , Königsbrücker Strasse 178, 01099 Dresden, Germany
| | | | | | - Ulrike Lüders
- CRISMAT, UMR 6508, CNRS-ENSICAEN, Normandie Université , 6 Blvd Maréchal Juin, 14000 Caen Cedex, France
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Copie O, Rotella H, Boullay P, Morales M, Pautrat A, Janolin PE, Infante IC, Pravathana D, Lüders U, Prellier W. Structure and magnetism of epitaxial PrVO3 films. J Phys Condens Matter 2013; 25:492201. [PMID: 24214665 DOI: 10.1088/0953-8984/25/49/492201] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
The interplay between charge, spin, orbital and lattice degrees of freedom in transition metal oxides has motivated extensive research aiming to understand the coupling phenomena in these multifunctional materials. Among them, rare earth vanadates are Mott insulators characterized by spin and orbital orderings strongly influenced by lattice distortions. Using epitaxial strain as a means to tailor the unit cell deformation, we report here on the first thin films of PrVO3 grown on (001)-oriented SrTiO3 substrate by pulsed laser deposition. An extensive structural characterization of the PrVO3 films, combining x-ray diffraction and high-resolution transmission electron microscopy studies, reveals the presence of oriented domains and a unit cell deformation tailored by the growth conditions. We have also investigated the physical properties of the PrVO3 films. We show that, while PrVO3 exhibits an insulating character, magnetic measurements indicate low-temperature hard-ferromagnetic behavior below 80 K. We discuss these properties in view of the thin-film structure.
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Affiliation(s)
- O Copie
- Laboratoire CRISMAT, CNRS-ENSICAEN and Université de Caen Basse Normandie (UMR 6508), 6 boulevard du Maréchal Juin, F-14050 Caen Cedex, France
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14
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Laukhin V, Skumryev V, Martí X, Hrabovsky D, Sánchez F, García-Cuenca MV, Ferrater C, Varela M, Lüders U, Bobo JF, Fontcuberta J. Electric-field control of exchange bias in multiferroic epitaxial heterostructures. Phys Rev Lett 2006; 97:227201. [PMID: 17155834 DOI: 10.1103/physrevlett.97.227201] [Citation(s) in RCA: 34] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2006] [Indexed: 05/12/2023]
Abstract
The magnetic exchange between epitaxial thin films of the multiferroic (antiferromagnetic and ferroelectric) hexagonal YMnO3 oxide and a soft ferromagnetic (FM) layer is used to couple the magnetic response of the FM layer to the magnetic state of the antiferromagnetic one. We will show that biasing the ferroelectric YMnO3 layer by an electric field allows control of the magnetic exchange bias and subsequently the magnetotransport properties of the FM layer. This finding may contribute to paving the way towards a new generation of electric-field controlled spintronic devices.
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Affiliation(s)
- V Laukhin
- Institut de Ciència de Materials de Barcelona-CSIC, Campus UAB, Bellaterra 08193, Spain
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