1
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Liu R, Yang F, Cheng S, Yue X, Liang F, Li W, Wang J, Zhang Q, Zou L, Yuan H, Yang Y, Zheng K, Liu L, Liu M, Gu W, Tu C, Mao X, Wang X, Qi Y, Liu Z. Controllable preparation of graphene glass fiber fabric towards mass production and its application in self-adaptive thermal management. Sci Bull (Beijing) 2024; 69:2712-2722. [PMID: 39060214 DOI: 10.1016/j.scib.2024.07.016] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/15/2024] [Revised: 05/25/2024] [Accepted: 06/28/2024] [Indexed: 07/28/2024]
Abstract
Direct synthesis of graphene on nonmetallic substrates via chemical vapor deposition (CVD) has become a frontier research realm targeting transfer-free applications of CVD graphene. However, the stable mass production of graphene with a favorable growth rate and quality remains a grand challenge. Herein, graphene glass fiber fabric (GGFF) was successfully developed through the controllable growth of graphene on non-catalytic glass fiber fabric, employing a synergistic binary-precursor CVD strategy to alleviate the dilemma between growth rate and quality. The binary precursors consisted of acetylene and acetone, where acetylene with high decomposition efficiency fed rapid graphene growth while oxygen-containing acetone was adopted for improving the layer uniformity and quality. Notably, the bifurcating introducing-confluent premixing (BI-CP) system was self-built for the controllable introduction of gas and liquid precursors, enabling the stable production of GGFF. GGFF features solar absorption and infrared emission properties, based on which the self-adaptive dual-mode thermal management film was developed. This film can automatically switch between heating and cooling modes by spontaneously perceiving the temperature, achieving excellent thermal management performances with heating and cooling power of ∼501.2 and ∼108.6 W m-2, respectively. These findings unlock a new strategy for the large-scale batch production of graphene materials and inspire advanced possibilities for further applications.
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Affiliation(s)
- Ruojuan Liu
- Centre for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China; Beijing Graphene Institute (BGI), Beijing 100095, China
| | - Fan Yang
- Centre for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China; Beijing Graphene Institute (BGI), Beijing 100095, China
| | - Shuting Cheng
- Beijing Graphene Institute (BGI), Beijing 100095, China; State Key Laboratory of Heavy Oil Processing, College of Science, China University of Petroleum, Beijing 102249, China
| | - Xianghe Yue
- School of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin 150001, China
| | - Fushun Liang
- Centre for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China; Beijing Graphene Institute (BGI), Beijing 100095, China
| | - Wenjuan Li
- Centre for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China; Beijing Graphene Institute (BGI), Beijing 100095, China
| | - Jingnan Wang
- Beijing Graphene Institute (BGI), Beijing 100095, China
| | - Qinchi Zhang
- Beijing Graphene Institute (BGI), Beijing 100095, China
| | - Liangyu Zou
- Beijing Graphene Institute (BGI), Beijing 100095, China
| | - Hao Yuan
- Centre for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China; Beijing Graphene Institute (BGI), Beijing 100095, China
| | - Yuyao Yang
- Centre for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China; Beijing Graphene Institute (BGI), Beijing 100095, China
| | - Kangyi Zheng
- Beijing Graphene Institute (BGI), Beijing 100095, China; Soochow Institute for Energy and Materials Innovations (SIEMIS), College of Energy, Soochow University, Suzhou 215006, China
| | - Longfei Liu
- Beijing Graphene Institute (BGI), Beijing 100095, China; Academy for Advanced Interdisciplinary Research, North University of China, Taiyuan 030051, China
| | - Mengxiong Liu
- Centre for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China; Beijing Graphene Institute (BGI), Beijing 100095, China
| | - Wei Gu
- Beijing Graphene Institute (BGI), Beijing 100095, China
| | - Ce Tu
- Beijing Graphene Institute (BGI), Beijing 100095, China
| | - Xinyu Mao
- Beijing Graphene Institute (BGI), Beijing 100095, China
| | - Xiaobai Wang
- Department of Chemistry, College of Chemistry and Materials Engineering, Beijing Technology and Business University, Beijing 100048, China.
| | - Yue Qi
- Beijing Graphene Institute (BGI), Beijing 100095, China.
| | - Zhongfan Liu
- Centre for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China; Beijing Graphene Institute (BGI), Beijing 100095, China.
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2
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Huang K, Liang F, Sun J, Zhang Q, Li Z, Cheng S, Li W, Yuan H, Liu R, Ge Y, Cheng Y, Wang K, Jiang J, Yang Y, Ma M, Yang F, Tu C, Xie Q, Yin W, Wang X, Qi Y, Liu Z. Overcoming the Incompatibility Between Electrical Conductivity and Electromagnetic Transmissivity: A Graphene Glass Fiber Fabric Design Strategy. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2313752. [PMID: 38576272 DOI: 10.1002/adma.202313752] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/16/2023] [Revised: 04/02/2024] [Indexed: 04/06/2024]
Abstract
Conventional conductive materials such as metals are crucial functional components of conductive systems in diverse electronic instruments. However, their severe intrinsic impedance mismatch with air dielectric causes strong reflection of incident electromagnetic waves, and the resulting low electromagnetic transmissivity typically interferes with surrounding electromagnetic signal communications in modern multifunction-integrated instruments. Herein, graphene glass fiber fabric (GGFF) that merges intrinsic electrical and electromagnetic properties of graphene with dielectric attributes and highly porous macrostructure of glass fiber fabric (GFF) is innovatively developed. Using a novel decoupling chemical vapor deposition growth strategy, high-quality and layer-limited graphene is prepared on noncatalytic nonmetallic GFF in a controlled manner; this is pivotal to realizing GGFF with the desired compatibility among high conductivity, low electromagnetic reflectivity, and high electromagnetic transmissivity. At the same sheet resistance over a wide range of values (250-3000 Ω·sq-1), the GGFF exhibits significantly lower electromagnetic reflectivity (by 0.42-0.51) and higher transmissivity (by 0.27-0.62) than those of its metal-based conductive counterpart (CuGFF). The material design strategy reported herein provides a constructive solution to eliminate the incompatibility between electrical conductivity and electromagnetic transmissivity faced by conventional conductive materials, spotlighting the applicability of GGFF in electric heating scenarios in radar, antenna, and stealth systems.
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Affiliation(s)
- Kewen Huang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Fushun Liang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Jianbo Sun
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Qinchi Zhang
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Zhihao Li
- College of Energy, Soochow Institute for Energy and Materials InnovationS (SIEMIS), Jiangsu Provincial Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies, Soochow University, Suzhou, 215006, P. R. China
| | - Shuting Cheng
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- State Key Laboratory of Heavy Oil Processing, College of Science, China University of Petroleum, Beijing, 102249, P. R. China
| | - Wenjuan Li
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Hao Yuan
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Ruojuan Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Yunsong Ge
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Yi Cheng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Kun Wang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Jun Jiang
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- State Key Laboratory of Heavy Oil Processing, College of Science, China University of Petroleum, Beijing, 102249, P. R. China
| | - Yuyao Yang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Mingyang Ma
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Fan Yang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Ce Tu
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Qin Xie
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Wanjian Yin
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- College of Energy, Soochow Institute for Energy and Materials InnovationS (SIEMIS), Jiangsu Provincial Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies, Soochow University, Suzhou, 215006, P. R. China
| | - Xiaobai Wang
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- Department of Chemistry, College of Chemistry and Materials Engineering, Beijing Technology and Business University, Beijing, 100048, P. R. China
| | - Yue Qi
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Zhongfan Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
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3
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Yoo MS, Byun KE, Lee H, Lee MH, Kwon J, Kim SW, Jeong U, Seol M. Ultraclean Interface of Metal Chalcogenides with Metal through Confined Interfacial Chalcogenization. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2310282. [PMID: 38190458 DOI: 10.1002/adma.202310282] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/04/2023] [Revised: 12/07/2023] [Indexed: 01/10/2024]
Abstract
Acquisition of defect-free transition metal dichalcogenides (TMDs) channels with clean heterojunctions is a critical issue in the production of TMD-based functional electronic devices. Conventional approaches have transferred TMD onto a target substrate, and then apply the typical device fabrication processes. Unfortunately, those processes cause physical and chemical defects in the TMD channels. Here, a novel synthetic process of TMD thin films, named confined interfacial chalcogenization (CIC) is proposed. In the proposed synthesis, a uniform TMDlayer is created at the Au/transition metal (TM) interface by diffusion of chalcogen through the upper Au layer and the reaction of chalcogen with the underlying TM. CIC allows for ultraclean heterojunctions with the metals, synthesis of various homo- and hetero-structured TMDs, and in situ TMD channel formation in the last stage of device fabrication. The mechanism of TMD growth is revealed by the TM-accelerated chalcogen diffusion, epitaxial growth of TMD on Au(111). We demonstrated a wafer-scale TMD-based vertical memristors which exhibit excellent statistical concordance in device performance enabled by the ultraclean heterojunctions and superior uniformity in thickness. CIC proposed in this study represents a breakthrough in in TMD-based electronic device fabrication and marking a substantial step toward practical next-generation integrated electronics.
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Affiliation(s)
- Min Seok Yoo
- 2D Device Technical Unit, Samsung Advanced Institute of Technology, Suwon, 16678, Republic of Korea
| | - Kyung-Eun Byun
- 2D Device Technical Unit, Samsung Advanced Institute of Technology, Suwon, 16678, Republic of Korea
| | - Hyangsook Lee
- Analytical Science Laboratory, Samsung Advanced Institute of Technology, Suwon, 16678, Republic of Korea
| | - Min-Hyun Lee
- Thin film Technical Unit, Samsung Advanced Institute of Technology, Suwon, 16678, Republic of Korea
| | - Junyoung Kwon
- 2D Device Technical Unit, Samsung Advanced Institute of Technology, Suwon, 16678, Republic of Korea
| | - Sang Won Kim
- 2D Device Technical Unit, Samsung Advanced Institute of Technology, Suwon, 16678, Republic of Korea
| | - Unyong Jeong
- Department of Materials Science and Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro Nam-Gu, Pohang, 37673, Republic of Korea
| | - Minsu Seol
- 2D Device Technical Unit, Samsung Advanced Institute of Technology, Suwon, 16678, Republic of Korea
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4
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Alghfeli A, Fisher TS. Sequential Bayesian-optimized graphene synthesis by direct solar-thermal chemical vapor deposition. Sci Rep 2024; 14:3660. [PMID: 38351180 PMCID: PMC11306603 DOI: 10.1038/s41598-024-54005-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/07/2023] [Accepted: 02/07/2024] [Indexed: 08/09/2024] Open
Abstract
This work reports the use of a high-flux solar simulator that mimics the solar spectrum and a cold-wall CVD reactor to demonstrate the feasibility of utilizing a renewable energy resource in synthesizing graphene under various conditions. A parametric study of process parameters was conducted using a probabilistic approach. Gaussian process regression serves as a surrogate to establish a prior for Bayesian optimization, and an information acquisition function is employed to identify conditions that yield high-quality products. Backscattered electron images and Raman mapping were used to assess the effects of growth conditions on graphene characteristic sizes, film quality, and uniformity. We report the synthesis of high-quality single-layer graphene (SLG) and AB-stacked bilayer graphene films in a one-step, short-time process with [Formula: see text] ratios of 0.21 and 0.14, respectively. Electron diffraction analysis shows peak intensities that resemble SLG and AB-bilayer graphene with up to 5 and 20 [Formula: see text]m grain sizes, respectively. The optical transmissivities of SLG and AB-bilayer graphene fall between 0.959-0.977 and 0.929-0.953, whereas the sheet resistances measured by a 4-point probe with 1 mm spacing are 15.5 ± 4.6 and 3.4 ± 1.5 k[Formula: see text]/sq, respectively. Further scale-up of the optimized graphene growth area was achieved by flattening the insolation profile, leading to spatial uniformity up to 13 mm in radius. Direct solar capture for CVD synthesis enable a practical and sustainable option for synthesizing graphene films applicable for photonic and electronic applications.
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Affiliation(s)
- Abdalla Alghfeli
- Mechanical and Aerospace Engineering Department, University of California Los Angeles, 420 Westwood Plaza, Los Angeles, CA, 90095, USA
| | - Timothy S Fisher
- Mechanical and Aerospace Engineering Department, University of California Los Angeles, 420 Westwood Plaza, Los Angeles, CA, 90095, USA.
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5
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Xue X, Liu M, Zhou X, Liu S, Wang L, Yu G. Controllable Synthesis and Growth Mechanism of Interlayer-Coupled Multilayer Graphene. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2634. [PMID: 37836275 PMCID: PMC10574119 DOI: 10.3390/nano13192634] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/28/2023] [Revised: 09/14/2023] [Accepted: 09/20/2023] [Indexed: 10/15/2023]
Abstract
The potential applications of multilayer graphene in many fields, such as superconductivity and thermal conductivity, continue to emerge. However, there are still many problems in the growth mechanism of multilayer graphene. In this paper, a simple control strategy for the preparation of interlayer-coupled multilayer graphene on a liquid Cu substrate was developed. By adjusting the flow rate of a carrier gas in the CVD system, the effect for finely controlling the carbon source supply was achieved. Therefore, the carbon could diffuse from the edge of the single-layer graphene to underneath the layer of graphene and then interlayer-coupled multilayer graphene with different shapes were prepared. Through a variety of characterization methods, it was determined that the stacked mode of interlayer-coupled multilayer graphene conformed to AB-stacking structure. The small multilayer graphene domains stacked under single-layer graphene was first found, and the growth process and growth mechanism of interlayer-coupled multilayer graphene with winged and umbrella shapes were studied, respectively. This study reveals the growth mechanism of multilayer graphene grown by using a carbon source through edge diffusion, paving the way for the controllable preparation of multilayer graphene on a liquid Cu surface.
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Affiliation(s)
- Xudong Xue
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China; (X.X.); (M.L.); (X.Z.); (S.L.)
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China;
| | - Mengya Liu
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China; (X.X.); (M.L.); (X.Z.); (S.L.)
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China;
| | - Xiahong Zhou
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China; (X.X.); (M.L.); (X.Z.); (S.L.)
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Shan Liu
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China; (X.X.); (M.L.); (X.Z.); (S.L.)
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Liping Wang
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China;
| | - Gui Yu
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China; (X.X.); (M.L.); (X.Z.); (S.L.)
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
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6
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Hong HC, Ryu JI, Lee HC. Recent Understanding in the Chemical Vapor Deposition of Multilayer Graphene: Controlling Uniformity, Thickness, and Stacking Configuration. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2217. [PMID: 37570535 PMCID: PMC10421010 DOI: 10.3390/nano13152217] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2023] [Revised: 07/24/2023] [Accepted: 07/28/2023] [Indexed: 08/13/2023]
Abstract
Multilayer graphene has attracted significant attention because its physical properties can be tuned by stacking its layers in a particular configuration. To apply the intriguing properties of multilayer graphene in various optoelectronic or spintronic devices, it is essential to develop a synthetic method that enables the control of the stacking configuration. This review article presents the recent progress in the synthesis of multilayer graphene by chemical vapor deposition (CVD). First, we discuss the CVD of multilayer graphene, utilizing the precipitation or segregation of carbon atoms from metal catalysts with high carbon solubility. Subsequently, we present novel CVD approaches to yield uniform and thickness-controlled multilayer graphene, which goes beyond the conventional precipitation or segregation methods. Finally, we introduce the latest studies on the control of stacking configurations in bilayer graphene during CVD processes.
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Affiliation(s)
| | | | - Hyo Chan Lee
- Department of Chemical Engineering, Myongji University, Yongin 17058, Republic of Korea
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7
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Bachu S, Kowalik M, Huet B, Nayir N, Dwivedi S, Hickey DR, Qian C, Snyder DW, Rotkin SV, Redwing JM, van Duin ACT, Alem N. Role of Bilayer Graphene Microstructure on the Nucleation of WSe 2 Overlayers. ACS NANO 2023. [PMID: 37368885 DOI: 10.1021/acsnano.2c12621] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/29/2023]
Abstract
Over the past few years, graphene grown by chemical vapor deposition (CVD) has gained prominence as a template to grow transition metal dichalcogenide (TMD) overlayers. The resulting two-dimensional (2D) TMD/graphene vertical heterostructures are attractive for optoelectronic and energy applications. However, the effects of the microstructural heterogeneities of graphene grown by CVD on the growth of the TMD overlayers are relatively unknown. Here, we present a detailed investigation of how the stacking order and twist angle of CVD graphene influence the nucleation of WSe2 triangular crystals. Through the combination of experiments and theory, we correlate the presence of interlayer dislocations in bilayer graphene with how WSe2 nucleates, in agreement with the observation of a higher nucleation density of WSe2 on top of Bernal-stacked bilayer graphene versus twisted bilayer graphene. Scanning/transmission electron microscopy (S/TEM) data show that interlayer dislocations are present only in Bernal-stacked bilayer graphene but not in twisted bilayer graphene. Atomistic ReaxFF reactive force field molecular dynamics simulations reveal that strain relaxation promotes the formation of these interlayer dislocations with localized buckling in Bernal-stacked bilayer graphene, whereas the strain becomes distributed in twisted bilayer graphene. Furthermore, these localized buckles in graphene are predicted to serve as thermodynamically favorable sites for binding WSex molecules, leading to the higher nucleation density of WSe2 on Bernal-stacked graphene. Overall, this study explores synthesis-structure correlations in the WSe2/graphene vertical heterostructure system toward the site-selective synthesis of TMDs by controlling the structural attributes of the graphene substrate.
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Affiliation(s)
- Saiphaneendra Bachu
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Malgorzata Kowalik
- Department of Mechanical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- 2D Crystal Consortium (2DCC), Materials Research Institute (MRI), The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Benjamin Huet
- 2D Crystal Consortium (2DCC), Materials Research Institute (MRI), The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Applied Research Laboratory (ARL), The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Nadire Nayir
- Department of Mechanical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- 2D Crystal Consortium (2DCC), Materials Research Institute (MRI), The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Physics, Karamanoglu Mehmetbey University, Karaman, Turkey 7000
| | - Swarit Dwivedi
- Department of Mechanical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- 2D Crystal Consortium (2DCC), Materials Research Institute (MRI), The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Danielle Reifsnyder Hickey
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- 2D Crystal Consortium (2DCC), Materials Research Institute (MRI), The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Chenhao Qian
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - David W Snyder
- Applied Research Laboratory (ARL), The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Slava V Rotkin
- Materials Research Institute and Department of Engineering Science & Mechanics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Joan M Redwing
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- 2D Crystal Consortium (2DCC), Materials Research Institute (MRI), The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Adri C T van Duin
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Mechanical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- 2D Crystal Consortium (2DCC), Materials Research Institute (MRI), The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Nasim Alem
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- 2D Crystal Consortium (2DCC), Materials Research Institute (MRI), The Pennsylvania State University, University Park, Pennsylvania 16802, United States
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8
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Meng Y, Li X, Kang X, Li W, Wang W, Lai Z, Wang W, Quan Q, Bu X, Yip S, Xie P, Chen D, Li D, Wang F, Yeung CF, Lan C, Liu C, Shen L, Lu Y, Chen F, Wong CY, Ho JC. Van der Waals nanomesh electronics on arbitrary surfaces. Nat Commun 2023; 14:2431. [PMID: 37105992 PMCID: PMC10140039 DOI: 10.1038/s41467-023-38090-8] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/09/2022] [Accepted: 04/14/2023] [Indexed: 04/29/2023] Open
Abstract
Chemical bonds, including covalent and ionic bonds, endow semiconductors with stable electronic configurations but also impose constraints on their synthesis and lattice-mismatched heteroepitaxy. Here, the unique multi-scale van der Waals (vdWs) interactions are explored in one-dimensional tellurium (Te) systems to overcome these restrictions, enabled by the vdWs bonds between Te atomic chains and the spontaneous misfit relaxation at quasi-vdWs interfaces. Wafer-scale Te vdWs nanomeshes composed of self-welding Te nanowires are laterally vapor grown on arbitrary surfaces at a low temperature of 100 °C, bringing greater integration freedoms for enhanced device functionality and broad applicability. The prepared Te vdWs nanomeshes can be patterned at the microscale and exhibit high field-effect hole mobility of 145 cm2/Vs, ultrafast photoresponse below 3 μs in paper-based infrared photodetectors, as well as controllable electronic structure in mixed-dimensional heterojunctions. All these device metrics of Te vdWs nanomesh electronics are promising to meet emerging technological demands.
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Affiliation(s)
- You Meng
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR
- State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR
| | - Xiaocui Li
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR
| | - Xiaolin Kang
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR
| | - Wanpeng Li
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR
| | - Wei Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR
- State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR
| | - Zhengxun Lai
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR
| | - Weijun Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR
| | - Quan Quan
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR
| | - Xiuming Bu
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR
| | - SenPo Yip
- Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka, 816-8580, Japan
| | - Pengshan Xie
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR
| | - Dong Chen
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR
| | - Dengji Li
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR
| | - Fei Wang
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130021, China.
| | - Chi-Fung Yeung
- Department of Chemistry, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR
| | - Changyong Lan
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Chuntai Liu
- Key Laboratory of Advanced Materials Processing & Mold (Zhengzhou University), Ministry of Education, Zhengzhou, 450002, P.R. China
| | - Lifan Shen
- College of Microelectronics and Key Laboratory of Optoelectronics Technology, Faculty of Information Technology, Beijing University of Technology, Beijing, 100124, P.R. China
| | - Yang Lu
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR
| | - Furong Chen
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR
| | - Chun-Yuen Wong
- State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR.
- Department of Chemistry, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR.
| | - Johnny C Ho
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR.
- State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR.
- Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka, 816-8580, Japan.
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9
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Yuan H, Chen Y, Lin R, Tan D, Zhang J, Wang Y, Gazit E, Ji W, Yang R. Modified Stranski-Krastanov Growth of Amino Acid Arrays toward Piezoelectric Energy Harvesting. ACS APPLIED MATERIALS & INTERFACES 2022; 14:46304-46312. [PMID: 36196653 DOI: 10.1021/acsami.2c13399] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Biomolecule-based piezoelectric nanostructures emerged as a new class of energy-converse materials, and designing tailored piezoelectric amino acid arrays is essential to achieve efficient electrical-mechanical coupling and fulfill their application potential. However, the controlled growth of amino acid nanostructures is still challenging due to the limited understanding of their growth mechanism. Herein, we base on the Stranski-Krastanov (S-K) growth mode and propose a mechanism for the growth of ordered amino acid array structures via physical vapor deposition. The growth of vertical valine sheet arrays is examined by changing the substrate temperature, chamber pressure, and source-substrate distance, and a "layer-plus-sheet" growth process is revealed. The modified S-K growth mode is applied to fabricate other amino acid nanostructures like leucine and isoleucine. The growth mode not only explains the formation of uniform and controllable morphology of amino acid structures but also leads to the significant enhancement of their piezoelectric properties. The maximal effective piezoelectric constant of valine sheets is 11.4 pm V-1, which approaches its highest predicted value. The output voltage of the valine array-based nanogenerator is ∼4.6 times the output voltage of the valine powder-based nanogenerator. This work provides new insights into the growth mechanism of ordered piezoelectric amino acid arrays, making them promising candidates for applications in wearable or implantable electronic devices.
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Affiliation(s)
- Hui Yuan
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an710126, China
- Department of Molecular Microbiology and Biotechnology, The Shmunis School of Biomedicine and Cancer Research, Tel Aviv University, Tel Aviv6997801, Israel
| | - Yu Chen
- Department of Molecular Microbiology and Biotechnology, The Shmunis School of Biomedicine and Cancer Research, Tel Aviv University, Tel Aviv6997801, Israel
| | - Ruikang Lin
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an710126, China
| | - Dan Tan
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an710126, China
| | - Jiaojiao Zhang
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an710126, China
| | - Yongmei Wang
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an710126, China
| | - Ehud Gazit
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an710126, China
- Department of Molecular Microbiology and Biotechnology, The Shmunis School of Biomedicine and Cancer Research, Tel Aviv University, Tel Aviv6997801, Israel
| | - Wei Ji
- Key Laboratory of Biorheological Science and Technology, Ministry of Education College of Bioengineering, Chongqing University, Chongqing400044, P. R. China
| | - Rusen Yang
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an710126, China
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10
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Sun H, Kong X, Park H, Liu F, Lee Z, Ding F. Spiral Growth of Adlayer Graphene. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2107587. [PMID: 35048426 DOI: 10.1002/adma.202107587] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/22/2021] [Revised: 12/22/2021] [Indexed: 06/14/2023]
Abstract
The morphology of as-grown graphene in chemical vapor deposition (CVD) experiments is sensitive to the reaction environment. Understanding the mechanism of formation of different graphene morphologies is essential to achieve controlled graphene CVD growth. Here the growth and formation mechanism of adlayer graphene spirals are reported. An adlayer graphene spiral is formed by fast propagation of the tips of spiral arms along the edge of the first graphene layer. The driving force to form spirals is the limited availability of carbon diffusing from the Cu surface through the edge of the first graphene layer. In addition, it is found that graphene onions are formed by overlapping graphene spirals with clockwise and anticlockwise arms. Based on these features, a kinetic Monte Carlo (kMC) method is demonstrated using which all the observed graphene spiral structures are successfully reproduced at the atomic level. This study thus unravels the hither-to unresolved mechanism of graphene onion growth and paves the way to the controllable growth of few-layer graphene by increasing the carbon supply at the edge of the first layer graphene.
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Affiliation(s)
- Haibin Sun
- Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan, 44919, Republic of Korea
- Key Laboratory of Microelectronics and Energy of Henan Province, College of Physics and Electronic Engineering, Xinyang Normal University, Xinyang, 464000, P. R. China
| | - Xiao Kong
- Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan, 44919, Republic of Korea
| | - Hyoju Park
- Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan, 44919, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, Republic of Korea
| | - Fengning Liu
- Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan, 44919, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, Republic of Korea
| | - Zonghoon Lee
- Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan, 44919, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, Republic of Korea
| | - Feng Ding
- Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan, 44919, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, Republic of Korea
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11
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Pedrazzetti L, Gibertini E, Bizzoni F, Russo V, Lucotti A, Nobili L, Magagnin L. Graphene Growth on Electroformed Copper Substrates by Atmospheric Pressure CVD. MATERIALS 2022; 15:ma15041572. [PMID: 35208110 PMCID: PMC8878375 DOI: 10.3390/ma15041572] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/20/2022] [Revised: 02/15/2022] [Accepted: 02/16/2022] [Indexed: 11/29/2022]
Abstract
Chemical vapor deposition (CVD) is regarded as the most promising technique for the mass production of graphene. CVD synthesis under vacuum is the most employed process, because the slower kinetics give better control on the graphene quality, but the requirement for high-vacuum equipment heavily affects the overall energy cost. In this work, we explore the possibility of using electroformed Cu substrate as a catalyst for atmospheric-pressure graphene growth. Electrochemical processes can produce high purity, freestanding metallic films, avoiding the surface defects that characterize the rolled foils. It was found that the growth mode of graphene on the electroformed catalyst was related to the surface morphology, which, in turn, was affected by the preliminary treatment of the substrate material. Suitable conditions for growing single layer graphene were identified.
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Affiliation(s)
- Lorenzo Pedrazzetti
- Department of Chemistry, Materials and Chemical Engineering “Giulio Natta”, Politecnico di Milano, 20131 Milano, Italy; (L.P.); (E.G.); (F.B.); (A.L.); (L.M.)
| | - Eugenio Gibertini
- Department of Chemistry, Materials and Chemical Engineering “Giulio Natta”, Politecnico di Milano, 20131 Milano, Italy; (L.P.); (E.G.); (F.B.); (A.L.); (L.M.)
| | - Fabio Bizzoni
- Department of Chemistry, Materials and Chemical Engineering “Giulio Natta”, Politecnico di Milano, 20131 Milano, Italy; (L.P.); (E.G.); (F.B.); (A.L.); (L.M.)
| | - Valeria Russo
- Energy Department, Politecnico di Milano, 20133 Milano, Italy;
| | - Andrea Lucotti
- Department of Chemistry, Materials and Chemical Engineering “Giulio Natta”, Politecnico di Milano, 20131 Milano, Italy; (L.P.); (E.G.); (F.B.); (A.L.); (L.M.)
| | - Luca Nobili
- Department of Chemistry, Materials and Chemical Engineering “Giulio Natta”, Politecnico di Milano, 20131 Milano, Italy; (L.P.); (E.G.); (F.B.); (A.L.); (L.M.)
- Correspondence:
| | - Luca Magagnin
- Department of Chemistry, Materials and Chemical Engineering “Giulio Natta”, Politecnico di Milano, 20131 Milano, Italy; (L.P.); (E.G.); (F.B.); (A.L.); (L.M.)
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12
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Kondapalli VR, He X, Khosravifar M, Khodabakhsh S, Collins B, Yarmolenko S, Paz y Puente A, Shanov V. CVD Synthesis of 3D-Shaped 3D Graphene Using a 3D-Printed Nickel-PLGA Catalyst Precursor. ACS OMEGA 2021; 6:29009-29021. [PMID: 34746590 PMCID: PMC8567395 DOI: 10.1021/acsomega.1c04072] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/30/2021] [Accepted: 10/01/2021] [Indexed: 06/13/2023]
Abstract
Earlier, various attempts to develop graphene structures using chemical and nonchemical routes were reported. Being efficient, scalable, and repeatable, 3D printing of graphene-based polymer inks and aerogels seems attractive; however, the produced structures highly rely on a binder or an ice support to stay intact. The presence of a binder or graphene oxide hinders the translation of the excellent graphene properties to the 3D structure. In this communication, we report our efforts to synthesize a 3D-shaped 3D graphene (3D2G) with good quality, desirable shape, and structure control by combining 3D printing with the atmospheric pressure chemical vapor deposition (CVD) process. Direct ink writing has been used in this work as a 3D-printing technique to print nickel powder-PLGA slurry into various shapes. The latter has been employed as a catalyst for graphene growth via CVD. Porous 3D2G with high purity was obtained after etching out the nickel substrate. The conducted micro CT and 2D Raman study of pristine 3D2G revealed important features of this new material. The interconnected porous nature of the obtained 3D2G combined with its good electrical conductivity (about 17 S/cm) and promising electrochemical properties invites applications for energy storage electrodes, where fast electron transfer and intimate contact with the active material and with the electrolyte are critically important. By changing the printing design, one can manipulate the electrical, electrochemical, and mechanical properties, including the structural porosity, without any requirement for additional doping or chemical postprocessing. The obtained binder-free 3D2G showed a very good thermal stability, tested by thermo-gravimetric analysis in air up to 500 °C. This work brings together two advanced manufacturing approaches, CVD and 3D printing, thus enabling the synthesis of high-quality, binder-free 3D2G structures with a tailored design that appeared to be suitable for multiple applications.
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Affiliation(s)
| | - Xingyu He
- Department
of Chemical and Environmental Engineering, University of Cincinnati, Cincinnati, Ohio 45221, United States
| | - Mahnoosh Khosravifar
- Department
of Mechanical and Materials Engineering, University of Cincinnati, Cincinnati, Ohio 45221, United States
| | - Safa Khodabakhsh
- Department
of Mechanical and Materials Engineering, University of Cincinnati, Cincinnati, Ohio 45221, United States
| | - Boyce Collins
- Engineering
Research Center for Revolutionizing Biomaterials, North Carolina A&T State University, IRC Building, Suite 242, Greensboro, North Carolina 27411, United States
| | - Sergey Yarmolenko
- Engineering
Research Center for Revolutionizing Biomaterials, North Carolina A&T State University, IRC Building, Suite 242, Greensboro, North Carolina 27411, United States
| | - Ashley Paz y Puente
- Department
of Mechanical and Materials Engineering, University of Cincinnati, Cincinnati, Ohio 45221, United States
| | - Vesselin Shanov
- Department
of Mechanical and Materials Engineering, University of Cincinnati, Cincinnati, Ohio 45221, United States
- Department
of Chemical and Environmental Engineering, University of Cincinnati, Cincinnati, Ohio 45221, United States
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13
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Ta HQ, Mendes RG, Liu Y, Yang X, Luo J, Bachmatiuk A, Gemming T, Zeng M, Fu L, Liu L, Rümmeli MH. In Situ Fabrication of Freestanding Single-Atom-Thick 2D Metal/Metallene and 2D Metal/ Metallene Oxide Membranes: Recent Developments. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:e2100619. [PMID: 34459155 PMCID: PMC8529443 DOI: 10.1002/advs.202100619] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/16/2021] [Revised: 06/23/2021] [Indexed: 05/13/2023]
Abstract
In recent years, two-dimensional (2D) materials have attracted a lot of research interest as they exhibit several fascinating properties. However, outside of 2D materials derived from van der Waals layered bulk materials only a few other such materials are realized, and it remains difficult to confirm their 2D freestanding structure. Despite that, many metals are predicted to exist as 2D systems. In this review, the authors summarize the recent progress made in the synthesis and characterization of these 2D metals, so called metallenes, and their oxide forms, metallene oxides as free standing 2D structures formed in situ through the use of transmission electron microscopy (TEM) and scanning TEM (STEM) to synthesize these materials. Two primary approaches for forming freestanding monoatomic metallic membranes are identified. In the first, graphene pores as a means to suspend the metallene or metallene oxide and in the second, electron-beam sputtering for the selective etching of metal alloys or thick complex initial materials is employed to obtain freestanding single-atom-thick 2D metal. The data show a growing number of 2D metals/metallenes and 2D metal/ metallene oxides having been confirmed and point to a bright future for further discoveries of these 2D materials.
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Affiliation(s)
- Huy Q. Ta
- Soochow Institute for Energy and Materials InnovationsCollege of EnergyCollaborative Innovation Center of SuzhouNano Science and TechnologyKey Laboratory of Advanced Carbon MaterialsWearable Energy Technologies of Jiangsu ProvinceSoochow UniversitySuzhou215006China
- Institute for Complex MaterialsIFW DresdenP.O. Box D‐01171DresdenGermany
| | - Rafael G. Mendes
- Institute for Complex MaterialsIFW DresdenP.O. Box D‐01171DresdenGermany
| | - Yu Liu
- Soochow Institute for Energy and Materials InnovationsCollege of EnergyCollaborative Innovation Center of SuzhouNano Science and TechnologyKey Laboratory of Advanced Carbon MaterialsWearable Energy Technologies of Jiangsu ProvinceSoochow UniversitySuzhou215006China
| | - Xiaoqin Yang
- Soochow Institute for Energy and Materials InnovationsCollege of EnergyCollaborative Innovation Center of SuzhouNano Science and TechnologyKey Laboratory of Advanced Carbon MaterialsWearable Energy Technologies of Jiangsu ProvinceSoochow UniversitySuzhou215006China
- School of Energy and Power EngineeringXi'an Jiaotong UniversityNo. 28, Xianning West RoadXi'anShaanxi710049China
| | - Jingping Luo
- School of Energy and Power EngineeringXi'an Jiaotong UniversityNo. 28, Xianning West RoadXi'anShaanxi710049China
| | - Alicja Bachmatiuk
- Material Science & Engineering CenterŁukasiewicz Research Network – PORT Polish Center for Technology DevelopmentUl. Stabłowicka 147Wrocław54‐066Poland
| | - Thomas Gemming
- Institute for Complex MaterialsIFW DresdenP.O. Box D‐01171DresdenGermany
| | - Mengqi Zeng
- College of Chemistry and Molecular ScienceWuhan UniversityWuhan430072China
| | - Lei Fu
- College of Chemistry and Molecular ScienceWuhan UniversityWuhan430072China
| | - Lijun Liu
- School of Energy and Power EngineeringXi'an Jiaotong UniversityNo. 28, Xianning West RoadXi'anShaanxi710049China
| | - Mark H. Rümmeli
- Soochow Institute for Energy and Materials InnovationsCollege of EnergyCollaborative Innovation Center of SuzhouNano Science and TechnologyKey Laboratory of Advanced Carbon MaterialsWearable Energy Technologies of Jiangsu ProvinceSoochow UniversitySuzhou215006China
- Institute for Complex MaterialsIFW DresdenP.O. Box D‐01171DresdenGermany
- Centre of Polymer and Carbon MaterialsPolish Academy of SciencesM. Curie‐Sklodowskiej 34Zabrze41‐819Poland
- Center for Energy and Environmental TechnologiesVSB‐Technical University of Ostrava17. Listopadu 15Ostrava708 33Czech Republic
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14
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Electric Field Induced Twisted Bilayer Graphene Infrared Plasmon Spectrum. NANOMATERIALS 2021; 11:nano11092433. [PMID: 34578749 PMCID: PMC8465028 DOI: 10.3390/nano11092433] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/22/2021] [Revised: 09/12/2021] [Accepted: 09/15/2021] [Indexed: 01/08/2023]
Abstract
In this work, we investigate the role of an external electric field in modulating the spectrum and electronic structure behavior of twisted bilayer graphene (TBG) and its physical mechanisms. Through theoretical studies, it is found that the external electric field can drive the relative positions of the conduction band and valence band to some extent. The difference of electric field strength and direction can reduce the original conduction band, and through the Fermi energy level, the band is significantly influenced by the tunable electric field and also increases the density of states of the valence band passing through the Fermi level. Under these two effects, the valence and conduction bands can alternately fold, causing drastic changes in spectrum behavior. In turn, the plasmon spectrum of TBG varies from semiconductor to metal. The dielectric function of TBG can exhibit plasmon resonance in a certain range of infrared.
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15
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Sun L, Wang Z, Wang Y, Zhao L, Li Y, Chen B, Huang S, Zhang S, Wang W, Pei D, Fang H, Zhong S, Liu H, Zhang J, Tong L, Chen Y, Li Z, Rümmeli MH, Novoselov KS, Peng H, Lin L, Liu Z. Hetero-site nucleation for growing twisted bilayer graphene with a wide range of twist angles. Nat Commun 2021; 12:2391. [PMID: 33888688 PMCID: PMC8062483 DOI: 10.1038/s41467-021-22533-1] [Citation(s) in RCA: 45] [Impact Index Per Article: 15.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/26/2020] [Accepted: 03/17/2021] [Indexed: 11/09/2022] Open
Abstract
Twisted bilayer graphene (tBLG) has recently attracted growing interest due to its unique twist-angle-dependent electronic properties. The preparation of high-quality large-area bilayer graphene with rich rotation angles would be important for the investigation of angle-dependent physics and applications, which, however, is still challenging. Here, we demonstrate a chemical vapor deposition (CVD) approach for growing high-quality tBLG using a hetero-site nucleation strategy, which enables the nucleation of the second layer at a different site from that of the first layer. The fraction of tBLGs in bilayer graphene domains with twist angles ranging from 0° to 30° was found to be improved to 88%, which is significantly higher than those reported previously. The hetero-site nucleation behavior was carefully investigated using an isotope-labeling technique. Furthermore, the clear Moiré patterns and ultrahigh room-temperature carrier mobility of 68,000 cm2 V-1 s-1 confirmed the high crystalline quality of our tBLG. Our study opens an avenue for the controllable growth of tBLGs for both fundamental research and practical applications.
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Affiliation(s)
- Luzhao Sun
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, People's Republic of China.,Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, People's Republic of China.,Beijing Graphene Institute, Beijing, 100095, People's Republic of China
| | - Zihao Wang
- School of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, UK
| | - Yuechen Wang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, People's Republic of China.,Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, People's Republic of China
| | - Liang Zhao
- Soochow Institute for Energy and Materials Innovation, Soochow University, Suzhou, 215006, People's Republic of China
| | - Yanglizhi Li
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, People's Republic of China.,Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, People's Republic of China.,Beijing Graphene Institute, Beijing, 100095, People's Republic of China
| | - Buhang Chen
- Beijing Graphene Institute, Beijing, 100095, People's Republic of China
| | - Shenghong Huang
- Department of Modern Mechanics, University of Science and Technology of China, Hefei, 230026, People's Republic of China.
| | - Shishu Zhang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, People's Republic of China
| | - Wendong Wang
- School of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, UK
| | - Ding Pei
- Clarendon Laboratory, Department of Physics, University of Oxford, Oxford, OX1 3PU, UK
| | - Hongwei Fang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, People's Republic of China
| | - Shan Zhong
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, People's Republic of China
| | - Haiyang Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, People's Republic of China
| | - Jincan Zhang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, People's Republic of China.,Beijing Graphene Institute, Beijing, 100095, People's Republic of China
| | - Lianming Tong
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, People's Republic of China
| | - Yulin Chen
- Clarendon Laboratory, Department of Physics, University of Oxford, Oxford, OX1 3PU, UK.,School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, People's Republic of China
| | - Zhenyu Li
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, 230026, People's Republic of China
| | - Mark H Rümmeli
- Soochow Institute for Energy and Materials Innovation, Soochow University, Suzhou, 215006, People's Republic of China
| | - Kostya S Novoselov
- School of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, UK
| | - Hailin Peng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, People's Republic of China. .,Beijing Graphene Institute, Beijing, 100095, People's Republic of China.
| | - Li Lin
- School of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, UK.
| | - Zhongfan Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, People's Republic of China. .,Beijing Graphene Institute, Beijing, 100095, People's Republic of China.
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16
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Cai L, Yu G. Fabrication Strategies of Twisted Bilayer Graphenes and Their Unique Properties. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2004974. [PMID: 33615593 DOI: 10.1002/adma.202004974] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/21/2020] [Revised: 10/09/2020] [Indexed: 06/12/2023]
Abstract
Twisted bilayer graphene (tBLG) exhibits a host of innovative physical phenomena owing to the formation of moiré superlattice. Especially, the discovery of superconducting behavior has generated new interest in graphene. The growing studies of tBLG mainly focus on its physical properties, while the fabrication of high-quality tBLG is a prerequisite for achieving the desired properties due to the great dependence on the twist angle and the interfacial contact. Here, the cutting-edge preparation strategies and challenges of tBLG fabrication are reviewed. The advantages and disadvantages of chemical vapor deposition, epitaxial growth on silicon carbide, stacking monolayer graphene, and folding monolayer graphene methods for the fabrication of tBLG are analyzed in detail, providing a reference for further development of preparation methods. Moreover, the characterization methods of twist angle for the tBLG are presented. Then, the unique physicochemical properties and corresponding applications of tBLG, containing correlated insulating and superconducting states, ferromagnetic state, soliton, enhanced optical absorption, tunable bandgap, and lithium intercalation and diffusion, are described. Finally, the opportunities and challenges for fabricating high-quality and large-area tBLG are discussed, unique physical properties are displayed, and new applications inferred from its angle-dependent features are explored, thereby impelling the commercialization of tBLG from laboratory to market.
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Affiliation(s)
- Le Cai
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Gui Yu
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
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17
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Meng L, Lu J, Bai Y, Liu L, Tang J, Zhang X. Graphene adlayer growth between nonepitaxial graphene and the Ni(111) substrate: a theoretical study. Phys Chem Chem Phys 2021; 23:2222-2228. [PMID: 33439169 DOI: 10.1039/d0cp04667a] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/22/2022]
Abstract
Understanding the fundamentals of chemical vapor deposition bilayer graphene growth is crucial for its synthesis. By employing density functional theory calculations and classical molecular dynamics simulations, we have investigated the evolution of carbon structures and the kinetics of the adlayer graphene nucleation between the graphene top layer (GTL) and the Ni(111) substrate. Compared to the epitaxial GTL, the weaker interaction between the nonepitaxial GTL and the Ni(111) substrate makes the nucleation of the adlayer more favorable. Furthermore, the defects involving in the adlayer graphene are easier to be healed by adopting the nonepitaxial GTL. Our results agree well with the experimental observation and demonstrate that the adlayer graphene with a high quality can be grown underneath the nonepitaxial GTL on Ni-like substrates.
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Affiliation(s)
- Lijuan Meng
- Department of Physics, Yancheng Institute of Technology, Yancheng, Jiangsu 224051, China
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18
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Khokhriakov D, Karpiak B, Hoque AM, Zhao B, Parui S, Dash SP. Robust Spin Interconnect with Isotropic Spin Dynamics in Chemical Vapor Deposited Graphene Layers and Boundaries. ACS NANO 2020; 14:15864-15873. [PMID: 33136363 PMCID: PMC7690053 DOI: 10.1021/acsnano.0c07163] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/25/2020] [Accepted: 10/20/2020] [Indexed: 06/11/2023]
Abstract
The utilization of large-area graphene grown by chemical vapor deposition (CVD) is crucial for the development of scalable spin interconnects in all-spin-based memory and logic circuits. However, the fundamental influence of the presence of multilayer graphene patches and their boundaries on spin dynamics has not been addressed yet, which is necessary for basic understanding and application of robust spin interconnects. Here, we report universal spin transport and dynamic properties in specially devised single layer, bilayer, and trilayer graphene channels and their layer boundaries and folds that are usually present in CVD graphene samples. We observe uniform spin lifetime with isotropic spin relaxation for spins with different orientations in graphene layers and their boundaries at room temperature. In all of the inhomogeneous graphene channels, the spin lifetime anisotropy ratios for spins polarized out-of-plane and in-plane are measured to be close to unity. Our analysis shows the importance of both Elliott-Yafet and D'yakonov-Perel' mechanisms with an increasing role of the latter mechanism in multilayer channels. These results of universal and isotropic spin transport on large-area inhomogeneous CVD graphene with multilayer patches and their boundaries and folds at room temperature prove its outstanding spin interconnect functionality, which is beneficial for the development of scalable spintronic circuits.
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Affiliation(s)
- Dmitrii Khokhriakov
- Department
of Microtechnology and Nanoscience, Chalmers
University of Technology, SE-41296, Göteborg, Sweden
| | - Bogdan Karpiak
- Department
of Microtechnology and Nanoscience, Chalmers
University of Technology, SE-41296, Göteborg, Sweden
| | - Anamul Md. Hoque
- Department
of Microtechnology and Nanoscience, Chalmers
University of Technology, SE-41296, Göteborg, Sweden
| | - Bing Zhao
- Department
of Microtechnology and Nanoscience, Chalmers
University of Technology, SE-41296, Göteborg, Sweden
| | | | - Saroj P. Dash
- Department
of Microtechnology and Nanoscience, Chalmers
University of Technology, SE-41296, Göteborg, Sweden
- Graphene
center, Chalmers University of Technology, SE-41296, Göteborg, Sweden
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19
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Ta HQ, Bachmatiuk A, Mendes RG, Perello DJ, Zhao L, Trzebicka B, Gemming T, Rotkin SV, Rümmeli MH. Large-Area Single-Crystal Graphene via Self-Organization at the Macroscale. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2002755. [PMID: 32965054 DOI: 10.1002/adma.202002755] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/23/2020] [Revised: 07/11/2020] [Indexed: 06/11/2023]
Abstract
In 1665 Christiaan Huygens first noticed how two pendulums, regardless of their initial state, would synchronize. It is now known that the universe is full of complex self-organizing systems, from neural networks to correlated materials. Here, graphene flakes, nucleated over a polycrystalline graphene film, synchronize during growth so as to ultimately yield a common crystal orientation at the macroscale. Strain and diffusion gradients are argued as the probable causes for the long-range cross-talk between flakes and the formation of a single-grain graphene layer. The work demonstrates that graphene synthesis can be advanced to control the nucleated crystal shape, registry, and relative alignment between graphene crystals for large area, that is, a single-crystal bilayer, and (AB-stacked) few-layer graphene can been grown at the wafer scale.
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Affiliation(s)
- Huy Quang Ta
- Soochow Institute for Energy and Materials Innovations, College of Physics, Optoelectronics and Energy, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, China
- Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, China
- Leibniz Institute for Solid State and Materials Research Dresden, P.O. Box 270116, Dresden, D-01171, Germany
| | - Alicja Bachmatiuk
- Leibniz Institute for Solid State and Materials Research Dresden, P.O. Box 270116, Dresden, D-01171, Germany
- Centre of Polymer and Carbon Materials, Polish Academy of Sciences, M. Curie-Sklodowskiej 34, Zabrze, 41-819, Poland
- Polish Center for Technology Development (PORT), Ul. Stabłowicka 147, Wrocław, 54-066, Poland
| | - Rafael Gregorio Mendes
- Soochow Institute for Energy and Materials Innovations, College of Physics, Optoelectronics and Energy, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, China
- Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, China
- Leibniz Institute for Solid State and Materials Research Dresden, P.O. Box 270116, Dresden, D-01171, Germany
| | - David J Perello
- School of Physics and Astronomy, The University of Manchester, Manchester, M13 9PL, UK
- National Graphene Institute, The University of Manchester, Booth St. E, Manchester, M13 9PL, UK
| | - Liang Zhao
- Soochow Institute for Energy and Materials Innovations, College of Physics, Optoelectronics and Energy, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, China
- Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, China
| | - Barbara Trzebicka
- Centre of Polymer and Carbon Materials, Polish Academy of Sciences, M. Curie-Sklodowskiej 34, Zabrze, 41-819, Poland
| | - Thomas Gemming
- Leibniz Institute for Solid State and Materials Research Dresden, P.O. Box 270116, Dresden, D-01171, Germany
| | - Slava V Rotkin
- Department of Engineering Science and Mechanics, Materials Research Institute, The Pennsylvania State University, Millennium Science Complex, University Park, PA, 16802, USA
| | - Mark H Rümmeli
- Soochow Institute for Energy and Materials Innovations, College of Physics, Optoelectronics and Energy, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, China
- Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, China
- Leibniz Institute for Solid State and Materials Research Dresden, P.O. Box 270116, Dresden, D-01171, Germany
- Centre of Polymer and Carbon Materials, Polish Academy of Sciences, M. Curie-Sklodowskiej 34, Zabrze, 41-819, Poland
- Institute of Environmental Technology, VSB-Technical University of Ostrava, 17. Listopadu 15, Ostrava, 708 33, Czech Republic
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20
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Nguyen VL, Duong DL, Lee SH, Avila J, Han G, Kim YM, Asensio MC, Jeong SY, Lee YH. Layer-controlled single-crystalline graphene film with stacking order via Cu-Si alloy formation. NATURE NANOTECHNOLOGY 2020; 15:861-867. [PMID: 32719494 DOI: 10.1038/s41565-020-0743-0] [Citation(s) in RCA: 33] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/01/2019] [Accepted: 06/24/2020] [Indexed: 06/11/2023]
Abstract
Multilayer graphene and its stacking order provide both fundamentally intriguing properties and technological engineering applications. Several approaches to control the stacking order have been demonstrated, but a method of precisely controlling the number of layers with desired stacking sequences is still lacking. Here, we propose an approach for controlling the layer thickness and crystallographic stacking sequence of multilayer graphene films at the wafer scale via Cu-Si alloy formation using direct chemical vapour deposition. C atoms are introduced by tuning the ultra-low-limit CH4 concentration to form a SiC layer, reaching one to four graphene layers at the wafer scale after Si sublimation. The crystallographic structure of single-crystalline or uniformly oriented bilayer (AB), trilayer (ABA) and tetralayer (ABCA) graphene are determined via nano-angle-resolved photoemission spectroscopy, which agrees with theoretical calculations, Raman spectroscopy and transport measurements. The present study takes a step towards the layer-controlled growth of graphite and other two-dimensional materials.
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Affiliation(s)
- Van Luan Nguyen
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, Republic of Korea
- Inorganic Materials Laboratory, Samsung Advanced Institute of Technology, Samsung Electronics, Suwon, Korea
| | - Dinh Loc Duong
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, Republic of Korea
- Department of Energy Science, Department of Physics, Sungkyunkwan University, Suwon, Korea
| | - Sang Hyub Lee
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, Republic of Korea
- Department of Energy Science, Department of Physics, Sungkyunkwan University, Suwon, Korea
| | - José Avila
- Synchrotron SOLEIL, Université Paris-Saclay, L'Orme des Merisiers Saint-Aubin, Gif sur Yvette, France
| | - Gyeongtak Han
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, Republic of Korea
| | - Young-Min Kim
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, Republic of Korea
- Department of Energy Science, Department of Physics, Sungkyunkwan University, Suwon, Korea
| | - Maria C Asensio
- Materials Science Institute of Madrid (ICMM), Spanish Scientific Research Council (CSIC), Cantoblanco, Madrid, Spain.
- MATINÉE: CSIC Associated Unit (ICMM-ICMUV Valencia University), Cantoblanco, Madrid, Spain.
| | - Se-Young Jeong
- Department of Cogno-mechatronics Engineering, Department of Optics and Mechatronics Engineering, Pusan National University, Busan, Republic of Korea.
| | - Young Hee Lee
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, Republic of Korea.
- Department of Energy Science, Department of Physics, Sungkyunkwan University, Suwon, Korea.
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21
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Hu L, Yi W, Rao T, Tang J, Hu C, Yin H, Hao H, Zhang L, Li C, Li T. Two-dimensional type-II g-C 3N 4/SiP-GaS heterojunctions as water splitting photocatalysts: first-principles predictions. Phys Chem Chem Phys 2020; 22:15649-15657. [PMID: 32618305 DOI: 10.1039/d0cp01360a] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/18/2022]
Abstract
Hydrogen production from water splitting by sunlight is a promising approach to solve the increasing energy and environmental crises, and the two-dimensional (2D) g-C3N4 monolayer is a red star in this realm. However, it suffers from low quantum efficiency caused by the fast combination of photogenerated electrons and holes. In this work, we investigate the electronic and photocatalytic properties of three newly proposed g-C3N4/SiP-GaS-α, -β and -γ heterojunctions via first principles predictions. Theoretical results demonstrate that the three g-C3N4/SiP-GaS heterojunctions exhibit direct bandgaps of ∼2.2 eV, and have a type-II band alignment with the valence band maximum (VBM) located at the g-C3N4 layer and the conduction band minimum (CBM) at the SiP-GaS layer. Furthermore, their band edges straddle the redox potential of water in a wide range of biaxial strain. Their absorption coefficients are several times larger than that of most previously discovered 2D heterojunctions. Moreover, the in-built electric field adds a driving force to separate photogenerated electrons and holes. The oxygen evolution reaction (OER) and hydrogen evolution reaction (HER) successfully take place on the g-C3N4 and SiP-GaS layers, respectively. Briefly, separated charge carriers, suitable band edges and strong visible-light absorbance, successful OER and HER enable the three g-C3N4/SiP-GaS heterojunctions to be promising water-splitting photocatalysts.
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Affiliation(s)
- Lei Hu
- Chongqing Key Laboratory of Water Environment Evolution and Pollution Control in Three Gorges Reservoir, School of Environmental and Chemical Engineering, Chongqing Three Gorges University, Chongqing, 404100, China.
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22
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Mayyas M, Li H, Kumar P, Ghasemian MB, Yang J, Wang Y, Lawes DJ, Han J, Saborio MG, Tang J, Jalili R, Lee SH, Seong WK, Russo SP, Esrafilzadeh D, Daeneke T, Kaner RB, Ruoff RS, Kalantar-Zadeh K. Liquid-Metal-Templated Synthesis of 2D Graphitic Materials at Room Temperature. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2001997. [PMID: 32510699 DOI: 10.1002/adma.202001997] [Citation(s) in RCA: 29] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/23/2020] [Revised: 05/11/2020] [Indexed: 06/11/2023]
Abstract
Room-temperature synthesis of 2D graphitic materials (2D-GMs) remains an elusive aim, especially with electrochemical means. Here, it is shown that liquid metals render this possible as they offer catalytic activity and an ultrasmooth templating interface that promotes Frank-van der Merwe regime growth, while allowing facile exfoliation due to the absence of interfacial forces as a nonpolar liquid. The 2D-GMs are formed at low onset potential and can be in situ doped depending on the choice of organic precursors and the electrochemical set-up. The materials are tuned to exhibit porous or pinhole-free morphologies and are engineered for their degree of oxidation and number of layers. The proposed liquid-metal-based room-temperature electrochemical route can be expanded to many other 2D materials.
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Affiliation(s)
- Mohannad Mayyas
- School of Chemical Engineering, University of New South Wales (UNSW), Sydney, 2052, Australia
| | - Hongzhe Li
- School of Chemical Engineering, University of New South Wales (UNSW), Sydney, 2052, Australia
| | - Priyank Kumar
- School of Chemical Engineering, University of New South Wales (UNSW), Sydney, 2052, Australia
| | - Mohammad B Ghasemian
- School of Chemical Engineering, University of New South Wales (UNSW), Sydney, 2052, Australia
| | - Jiong Yang
- School of Chemical Engineering, University of New South Wales (UNSW), Sydney, 2052, Australia
| | - Yifang Wang
- School of Chemical Engineering, University of New South Wales (UNSW), Sydney, 2052, Australia
| | - Douglas J Lawes
- Mark Wainwright Analytical Centre, University of New South Wales (UNSW), Sydney, 2052, Australia
| | - Jialuo Han
- School of Chemical Engineering, University of New South Wales (UNSW), Sydney, 2052, Australia
| | - Maricruz G Saborio
- School of Chemical Engineering, University of New South Wales (UNSW), Sydney, 2052, Australia
| | - Jianbo Tang
- School of Chemical Engineering, University of New South Wales (UNSW), Sydney, 2052, Australia
| | - Rouhollah Jalili
- School of Chemical Engineering, University of New South Wales (UNSW), Sydney, 2052, Australia
| | - Sun Hwa Lee
- Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
| | - Won Kyung Seong
- Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
| | - Salvy P Russo
- School of Science, Royal Melbourne Institute of Technology (RMIT), Melbourne, 3001, Australia
| | - Dorna Esrafilzadeh
- Graduate School of Biomedical Engineering, University of New South Wales (UNSW), Sydney, 2031, Australia
| | - Torben Daeneke
- School of Engineering, Royal Melbourne Institute of Technology (RMIT), Melbourne, 3001, Australia
| | - Richard B Kaner
- Department of Chemistry and Biochemistry and California NanoSystems Institute, University of California Los Angeles (UCLA), Los Angeles, CA, 90095, USA
- Department of Materials Science and Engineering and California NanoSystems Institute, University of California Los Angeles (UCLA), Los Angeles, California, 90095, USA
| | - Rodney S Ruoff
- Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Kourosh Kalantar-Zadeh
- School of Chemical Engineering, University of New South Wales (UNSW), Sydney, 2052, Australia
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23
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Ta HQ, Yang QX, Liu S, Bachmatiuk A, Mendes RG, Gemming T, Liu Y, Liu L, Tokarska K, Patel RB, Choi JH, Rümmeli MH. In Situ Formation of Free-Standing Single-Atom-Thick Antiferromagnetic Chromium Membranes. NANO LETTERS 2020; 20:4354-4361. [PMID: 32357000 DOI: 10.1021/acs.nanolett.0c01082] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Compared to van der Waals two-dimensional (2D) layers with lateral covalent bonds, metallic bonding systems favor close-packed structures, and thus, free-standing 2D metals have remained, for the most part, elusive. However, a number of theoretical studies suggest a number of metals can exist as 2D materials and a few early experiments support this notion. Here we demonstrate free-standing single-atom-thick crystalline chromium (Cr) suspended membranes using aberration-corrected transmission electron microscopy and image simulations. Density functional theory studies confirm the 2D Cr membranes have an antiferromagnetic ground state making them highly attractive for spintronic applications. Moreover, the work also helps consolidate the existence of a new family of 2D metal layers.
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Affiliation(s)
- Huy Quang Ta
- Soochow Institute for Energy and Materials Innovations, College of Physics, Optoelectronics and Energy, Collaborative Innovation Center of Suzhou Nano Science and Technology, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215006, China
- Leibniz Institute for Solid State and Materials Research Dresden, P.O. Box 270116, Dresden D-01171, Germany
| | - Qin Xiao Yang
- Soochow Institute for Energy and Materials Innovations, College of Physics, Optoelectronics and Energy, Collaborative Innovation Center of Suzhou Nano Science and Technology, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215006, China
- School of Energy and Power Engineering, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an, Shaanxi 710049, China
| | - Shuyuan Liu
- Soochow Institute for Energy and Materials Innovations, College of Physics, Optoelectronics and Energy, Collaborative Innovation Center of Suzhou Nano Science and Technology, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215006, China
| | - A Bachmatiuk
- Leibniz Institute for Solid State and Materials Research Dresden, P.O. Box 270116, Dresden D-01171, Germany
- Polish Center for Technology Development (PORT), Ul. Stabłowicka 147, Wrocław 54-066, Poland
- Centre of Polymer and Carbon Materials, Polish Academy of Sciences, M. Curie-Sklodowskiej 34, Zabrze 41-819, Poland
| | - Rafael G Mendes
- Leibniz Institute for Solid State and Materials Research Dresden, P.O. Box 270116, Dresden D-01171, Germany
| | - Thomas Gemming
- Leibniz Institute for Solid State and Materials Research Dresden, P.O. Box 270116, Dresden D-01171, Germany
| | - Yu Liu
- Soochow Institute for Energy and Materials Innovations, College of Physics, Optoelectronics and Energy, Collaborative Innovation Center of Suzhou Nano Science and Technology, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215006, China
| | - Lijun Liu
- School of Energy and Power Engineering, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an, Shaanxi 710049, China
| | - Klaudia Tokarska
- Centre of Polymer and Carbon Materials, Polish Academy of Sciences, M. Curie-Sklodowskiej 34, Zabrze 41-819, Poland
| | - Rajen B Patel
- NJ Explosives Research Branch, Picatinny Arsenal, Picatinny Arsenal, New Jersey 07806, United States
| | - Jin-Ho Choi
- Soochow Institute for Energy and Materials Innovations, College of Physics, Optoelectronics and Energy, Collaborative Innovation Center of Suzhou Nano Science and Technology, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215006, China
| | - Mark H Rümmeli
- Soochow Institute for Energy and Materials Innovations, College of Physics, Optoelectronics and Energy, Collaborative Innovation Center of Suzhou Nano Science and Technology, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215006, China
- Leibniz Institute for Solid State and Materials Research Dresden, P.O. Box 270116, Dresden D-01171, Germany
- Centre of Polymer and Carbon Materials, Polish Academy of Sciences, M. Curie-Sklodowskiej 34, Zabrze 41-819, Poland
- Institute of Environmental Technology, VSB-Technical University of Ostrava, 17. Listopadu 15, Ostrava 708 33, Czech Republic
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24
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Yu Z, Song A, Sun L, Li Y, Gao L, Peng H, Ma T, Liu Z, Luo J. Understanding Interlayer Contact Conductance in Twisted Bilayer Graphene. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e1902844. [PMID: 31490630 DOI: 10.1002/smll.201902844] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2019] [Revised: 08/15/2019] [Indexed: 05/13/2023]
Abstract
Bilayer or few-layer 2D materials showing novel electrical properties in electronic device applications have aroused increasing interest in recent years. Obtaining a comprehensive understanding of interlayer contact conductance still remains a challenge, but is significant for improving the performance of bilayer or few-layer 2D electronic devices. Here, conductive atomic force microscope (C-AFM) experiments are reported to explore the interlayer contact conductance between bilayer graphene (BLG) with various twisted stacking structures fabricated by the chemical vapor deposition (CVD) method. The current maps show that the interlayer contact conductance between BLG strongly depends on the twist angle. The interlayer contact conductance of 0° AB-stacking bilayer graphene (AB-BLG) is ≈4 times as large as that of 30° twisted bilayer graphene (t-BLG), which indicates that the twist angle-dependent interlayer contact conductance originates from the coupling-decoupling transitions. Moreover, the moiré superlattice-level current images of t-BLG show modulations of local interlayer contact conductance. Density functional theory calculations together with a theoretical model reproduce the C-AFM current map and show that the modulation is mainly attributed to the overall contribution of local interfacial carrier density and tunneling barrier.
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Affiliation(s)
- Zhiwei Yu
- State Key Laboratory of Tribology, Tsinghua University, Beijing, 100084, China
| | - Aisheng Song
- State Key Laboratory of Tribology, Tsinghua University, Beijing, 100084, China
| | - Luzhao Sun
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China
| | - Yanglizhi Li
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China
| | - Lei Gao
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing, 100083, China
| | - Hailin Peng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
- Beijing Graphene Institute, Beijing, 100094, China
| | - Tianbao Ma
- State Key Laboratory of Tribology, Tsinghua University, Beijing, 100084, China
| | - Zhongfan Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
- Beijing Graphene Institute, Beijing, 100094, China
| | - Jianbin Luo
- State Key Laboratory of Tribology, Tsinghua University, Beijing, 100084, China
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25
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Lu Z, Sun X, Xiang Y, Wang GC, Washington MA, Lu TM. Large scale epitaxial graphite grown on twin free nickel(111)/spinel substrate. CrystEngComm 2020. [DOI: 10.1039/c9ce01515a] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Large scale, single crystalline graphite with millimeter size domain is achieved using a LPCVD process with a temperature below 925 °C.
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Affiliation(s)
- Zonghuan Lu
- Department of Physics, Applied Physics, and Astronomy, and
- Center for Materials, Devices, and Integrated Systems (cMDIS)
- Rensselaer Polytechnic Institute
- Troy
- USA
| | - Xin Sun
- Department of Physics, Applied Physics, and Astronomy, and
- Center for Materials, Devices, and Integrated Systems (cMDIS)
- Rensselaer Polytechnic Institute
- Troy
- USA
| | - Yu Xiang
- Department of Physics, Applied Physics, and Astronomy, and
- Center for Materials, Devices, and Integrated Systems (cMDIS)
- Rensselaer Polytechnic Institute
- Troy
- USA
| | - Gwo-Ching Wang
- Department of Physics, Applied Physics, and Astronomy, and
- Center for Materials, Devices, and Integrated Systems (cMDIS)
- Rensselaer Polytechnic Institute
- Troy
- USA
| | - Morris A. Washington
- Department of Physics, Applied Physics, and Astronomy, and
- Center for Materials, Devices, and Integrated Systems (cMDIS)
- Rensselaer Polytechnic Institute
- Troy
- USA
| | - Toh-Ming Lu
- Department of Physics, Applied Physics, and Astronomy, and
- Center for Materials, Devices, and Integrated Systems (cMDIS)
- Rensselaer Polytechnic Institute
- Troy
- USA
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26
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Cho JH, Na SR, Park S, Akinwande D, Liechti KM, Cullinan MA. Controlling the number of layers in graphene using the growth pressure. NANOTECHNOLOGY 2019; 30:235602. [PMID: 30780133 DOI: 10.1088/1361-6528/ab0847] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Monolayer graphene is commonly grown on Cu substrates due to the self-limiting nature of graphene synthesis by chemical vapor deposition (CVD). Consequently, the growth of multilayer graphene by CVD has proven to be relatively difficult. This study demonstrates that the number of layers in graphene synthesized on a copper substrate can be precisely set by controlling the partial pressure of hydrogen gas used in the CVD process. This study also shows that a pressure threshold exists for a distinct transition from monolayer to multilayer graphene growth. This threshold is shown to be the boundary where the graphene growth process on Cu by CVD is no longer a self-limiting process. In addition, the multilayer graphene synthesized through the pressure control method forms in the Volmer-Weber mode with an AB stacking structure.
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Affiliation(s)
- Joon Hyong Cho
- Department of Mechanical Engineering, The University of Texas at Austin, Austin, TX 78712, United States of America
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27
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Muniraj VKA, Dwivedi PK, Tamhane PS, Szunerits S, Boukherroub R, Shelke MV. High-Energy Flexible Supercapacitor-Synergistic Effects of Polyhydroquinone and RuO 2· xH 2O with Microsized, Few-Layered, Self-Supportive Exfoliated-Graphite Sheets. ACS APPLIED MATERIALS & INTERFACES 2019; 11:18349-18360. [PMID: 31059221 DOI: 10.1021/acsami.9b01712] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
An effective and straightforward route for tailoring the self-supporting, exfoliated flexible graphite substrate (E-FGS) using electrochemical anodization is proposed. E-FGS has essential features of highly exfoliated, few-layered, two-dimensional graphite sheets with the size of several tens of micrometers, interconnected along the axis of the substrate surface. The novel hierarchical porous structural morphology of E-FGS enables large active sites for efficient electrolyte ion and charge transport when used as electrode material for a supercapacitor. In order to effectively utilize this promising E-FGS electrode for energy storage purpose, a ternary composite is further synthesized with pseudocapacitive polyhydroquinone (PHQ) and hydrous RuO2 (hRO). hRO is synthesized via a sol-gel route, while electropolymerization is utilized for the electrodeposition of PHQ over E-FGS. Ultimately, the fabricated self-supporting E-FGS-based flexible supercapacitor is capable of delivering areal specific capacitance values as high as 378 mF cm-2 at a current density of 1 mA cm-2. Addition of the pseudocapacitive component to the E-FGS texture leads to ∼10 times increase of the electrochemical charge storage capability. The imposition of mechanical forces to this flexible supercapacitor device results in trivial changes in electrochemical properties and is still capable of retaining 91% of the initial specific capacitance after 10 000 cycles. Alongside, the fabricated symmetrical solid-state flexible device exhibited a high energy density of 8.4 μWh cm-2. The excellent performance along with the ease of synthesis and fabrication process of the flexible solid-state supercapacitor device using PHQ/hRO/E-FGS holds promise for large-scale production.
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Affiliation(s)
- Vedi Kuyil Azhagan Muniraj
- Physical and Materials Chemistry Division , CSIR-National Chemical Laboratory , Pune 411008 , Maharashtra , India
- Academy of Scientific and Innovative Research (AcSIR) , Gaziabad 201002 , Uttar Pradesh , India
- CNRS, Centrale Lille, ISEN, University Valenciennes, UMR 8520-IEMN , University of Lille , F-59000 Lille , France
| | - Pravin Kumari Dwivedi
- Physical and Materials Chemistry Division , CSIR-National Chemical Laboratory , Pune 411008 , Maharashtra , India
- Academy of Scientific and Innovative Research (AcSIR) , Gaziabad 201002 , Uttar Pradesh , India
| | - Parikshit Shivaji Tamhane
- Physical and Materials Chemistry Division , CSIR-National Chemical Laboratory , Pune 411008 , Maharashtra , India
| | - Sabine Szunerits
- CNRS, Centrale Lille, ISEN, University Valenciennes, UMR 8520-IEMN , University of Lille , F-59000 Lille , France
| | - Rabah Boukherroub
- CNRS, Centrale Lille, ISEN, University Valenciennes, UMR 8520-IEMN , University of Lille , F-59000 Lille , France
| | - Manjusha Vilas Shelke
- Physical and Materials Chemistry Division , CSIR-National Chemical Laboratory , Pune 411008 , Maharashtra , India
- Academy of Scientific and Innovative Research (AcSIR) , Gaziabad 201002 , Uttar Pradesh , India
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28
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Reckinger N, Casa M, Scheerder JE, Keijers W, Paillet M, Huntzinger JR, Haye E, Felten A, Van de Vondel J, Sarno M, Henrard L, Colomer JF. Restoring self-limited growth of single-layer graphene on copper foil via backside coating. NANOSCALE 2019; 11:5094-5101. [PMID: 30839973 DOI: 10.1039/c8nr09841g] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The growth of single-layer graphene (SLG) by chemical vapor deposition (CVD) on copper surfaces is very popular because of the self-limiting effect that, in principle, prevents the growth of few-layer graphene (FLG). However, the reproducibility of the CVD growth of homogeneous SLG remains a major challenge, especially if one wants to avoid heavy surface treatments, monocrystalline substrates and expensive equipment to control the atmosphere inside the growth system. We demonstrate here that backside tungsten coating of copper foils allows for the exclusive growth of SLG with full coverage by atmospheric pressure CVD implemented in a vacuum-free furnace. We show that the absence of FLG patches is related to the suppression of carbon diffusion through copper. In the perspective of large-scale production of graphene, this approach constitutes a significant improvement to the traditional CVD growth process since (1) a tight control of the hydrocarbon flow is no longer required to avoid FLG formation and, consequently, (2) the growth duration necessary to reach full coverage can be drastically shortened.
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Affiliation(s)
- Nicolas Reckinger
- Department of Physics, University of Namur, Rue de Bruxelles 61, 5000 Namur, Belgium.
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29
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Deng B, Liu Z, Peng H. Toward Mass Production of CVD Graphene Films. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1800996. [PMID: 30277604 DOI: 10.1002/adma.201800996] [Citation(s) in RCA: 81] [Impact Index Per Article: 16.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/11/2018] [Revised: 06/14/2018] [Indexed: 05/09/2023]
Abstract
Chemical vapor deposition (CVD) is considered to be an efficient method for fabricating large-area and high-quality graphene films due to its excellent controllability and scalability. Great efforts have been made to control the growth of graphene to achieve large domain sizes, uniform layers, fast growth, and low synthesis temperatures. Some attempts have been made by both the scientific community and startup companies to mass produce graphene films; however, there is a large difference in the quality of graphene synthesized on a laboratory scale and an industrial scale. Here, recent progress toward the mass production of CVD graphene films is summarized, including the manufacturing process, equipment, and critical process parameters. Moreover, the large-scale homogeneity of graphene films and fast characterization methods are also discussed, which are crucial for quality control in mass production.
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Affiliation(s)
- Bing Deng
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Zhongfan Liu
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
- Beijing Graphene Institute (BGI), Beijing, 100094, China
| | - Hailin Peng
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
- Beijing Graphene Institute (BGI), Beijing, 100094, China
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30
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Hasan M, Meiou W, Yulian L, Ullah S, Ta HQ, Zhao L, Mendes RG, Malik ZP, Ahmad N, Liu Z, Rümmeli MH. Direct chemical vapor deposition synthesis of large area single-layer brominated graphene. RSC Adv 2019; 9:13527-13532. [PMID: 35519551 PMCID: PMC9063914 DOI: 10.1039/c9ra01152h] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/14/2019] [Revised: 05/22/2019] [Accepted: 04/17/2019] [Indexed: 11/21/2022] Open
Abstract
Graphene and its derivatives such as functionalized graphene are considered to hold significant promise in numerous applications. Within that context, halogen functionalization is exciting for radical and nucleophilic substitution reactions as well as for the grafting of organic moieties. Historically, the successful covalent doping of sp2 carbon with halogens, such as bromine, was demonstrated with carbon nanotubes. However, the direct synthesis of brominated graphene has thus far remained elusive. In this study we show how large area brominated graphene with C–Br bonds can be achieved directly (i.e. a single step) using hydrogen rich low pressure chemical vapor deposition. The direct synthesis of brominated graphene could lead to practical developments. In this study we present the first direct synthesis of large area, single layer, crystalline graphene with covalently doped bromine.![]()
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31
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Asokan V, Zhu D, Huang W, Wang H, Gao W, Zhang Z, Jin C. Growth of 'W' doped molybdenum disulfide on graphene transferred molybdenum substrate. Sci Rep 2018; 8:7396. [PMID: 29743558 PMCID: PMC5943342 DOI: 10.1038/s41598-018-25796-9] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/01/2018] [Accepted: 04/23/2018] [Indexed: 12/05/2022] Open
Abstract
In the present study, a novel method has been carried out to grow tungsten (W) doped molybdenum disulfide (MoS2) on the graphene transferred TEM grid in a chemical vapor deposition (CVD) setup. Tungsten trioxide (WO3) has been used as a source for ‘W’ while ‘Mo’ has been derived from Mo based substrate. Different experimental parameters were used in this experiment. Higher gas flow rate decreases the size of the sample flake and on other side increases the dopant concentrations. The interaction mechanism between Mo, S, W and oxygen (O) have been explored. The influence of oxygen seems to be not avoidable completely which also imposes effective growth condition for the reaction of Mo with incoming sulfur atoms. The difference in the migration energies of Mo, WO3, S clusters on the graphene and the higher reactivity of Mo clusters over other possibly formed atomic clusters on the graphene leads to the growth of W doped MoS2 monolayers. Formation of MoS2 monolayer and the nature of edge doping of ‘W’ is explained well with the crystal model using underlying nucleation principles. We believe our result provide a special route to prepare W doped MoS2 on graphene substrate in the future.
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Affiliation(s)
- Vijayshankar Asokan
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, China.,Environmental Inorganic Chemistry, Department of Chemistry and Chemical Engineering, Chalmers University of Technology, Gothenburg, 41296, Sweden
| | - Dancheng Zhu
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, China
| | - Wei Huang
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, China
| | - Hulian Wang
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, China
| | - Wandong Gao
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, China
| | - Ze Zhang
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, China
| | - Chuanhong Jin
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, China.
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32
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Gao Z, Zhang Q, Naylor CH, Kim Y, Abidi IH, Ping J, Ducos P, Zauberman J, Zhao MQ, Rappe AM, Luo Z, Ren L, Johnson ATC. Crystalline Bilayer Graphene with Preferential Stacking from Ni-Cu Gradient Alloy. ACS NANO 2018; 12:2275-2282. [PMID: 29509401 DOI: 10.1021/acsnano.7b06992] [Citation(s) in RCA: 19] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
We developed a high-yield synthesis of highly crystalline bilayer graphene (BLG) with two preferential stacking modes using a Ni-Cu gradient alloy growth substrate. Previously reported approaches for BLG growth include flat growth substrates of Cu or Ni-Cu uniform alloys and "copper pocket" structures. Use of flat substrates has the advantage of being scalable, but the growth mechanism is either "surface limited" (for Cu) or carbon precipitation (for uniform Ni-Cu), which results in multicrystalline BLG grains. For copper pockets, growth proceeds through a carbon back-diffusion mechanism, which leads to the formation of highly crystalline BLG, but scaling of the copper pocket structure is expected to be difficult. Here we demonstrate a Ni-Cu gradient alloy that combines the advantages of these earlier methods: the substrate is flat, so easy to scale, while growth proceeds by a carbon back-diffusion mechanism leading to high-yield growth of BLG with high crystallinity. The BLG layer stacking was almost exclusively Bernal or twisted with an angle of 30°, consistent with first-principles calculations we conducted. Furthermore, we demonstrated scalable production of transistor arrays based crystalline Bernal-stacked BLG with a band gap that was tunable at room temperature.
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Affiliation(s)
- Zhaoli Gao
- Department of Physics and Astronomy , University of Pennsylvania , Philadelphia , Pennsylvania 19104 , United States
| | - Qicheng Zhang
- Department of Physics and Astronomy , University of Pennsylvania , Philadelphia , Pennsylvania 19104 , United States
- Department of Chemical and Biomolecular Engineering , Hong Kong University of Science and Technology , Clear Water Bay , Kowloon , Hong Kong
| | - Carl H Naylor
- Department of Physics and Astronomy , University of Pennsylvania , Philadelphia , Pennsylvania 19104 , United States
| | - Youngkuk Kim
- The Makineni Theoretical Laboratories, Department of Chemistry , University of Pennsylvania , Philadelphia , Pennsylvania 19104-632 , United States
- Department of Physics , Sungkyunkwan University , Suwon 16419 , Korea
| | - Irfan Haider Abidi
- Department of Chemical and Biomolecular Engineering , Hong Kong University of Science and Technology , Clear Water Bay , Kowloon , Hong Kong
| | - Jinglei Ping
- Department of Physics and Astronomy , University of Pennsylvania , Philadelphia , Pennsylvania 19104 , United States
| | - Pedro Ducos
- Department of Physics and Astronomy , University of Pennsylvania , Philadelphia , Pennsylvania 19104 , United States
- Departamento de Física , Universidad San Francisco de Quito , Quito 170901 , Ecuador
| | - Jonathan Zauberman
- Department of Physics and Astronomy , University of Pennsylvania , Philadelphia , Pennsylvania 19104 , United States
| | - Meng-Qiang Zhao
- Department of Physics and Astronomy , University of Pennsylvania , Philadelphia , Pennsylvania 19104 , United States
| | - Andrew M Rappe
- The Makineni Theoretical Laboratories, Department of Chemistry , University of Pennsylvania , Philadelphia , Pennsylvania 19104-632 , United States
| | - Zhengtang Luo
- Department of Chemical and Biomolecular Engineering , Hong Kong University of Science and Technology , Clear Water Bay , Kowloon , Hong Kong
| | - Li Ren
- School of Materials Science and Engineering , South China University of Technology , Guangzhou 510006 , People's Republic of China
| | - Alan T Charlie Johnson
- Department of Physics and Astronomy , University of Pennsylvania , Philadelphia , Pennsylvania 19104 , United States
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33
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Habib MR, Liang T, Yu X, Pi X, Liu Y, Xu M. A review of theoretical study of graphene chemical vapor deposition synthesis on metals: nucleation, growth, and the role of hydrogen and oxygen. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2018; 81:036501. [PMID: 29355108 DOI: 10.1088/1361-6633/aa9bbf] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Graphene has attracted intense research interest due to its extraordinary properties and great application potential. Various methods have been proposed for the synthesis of graphene, among which chemical vapor deposition has drawn a great deal of attention for synthesizing large-area and high-quality graphene. Theoretical understanding of the synthesis mechanism is crucial for optimizing the experimental design for desired graphene production. In this review, we discuss the three fundamental steps of graphene synthesis in details, i.e. (1) decomposition of carbon feedstocks and formation of various active carbon species, (2) nucleation, and (3) attachment and extension. We provide a complete scenario of graphene synthesis on metal surfaces at atomistic level by means of density functional theory, molecular dynamics (MD), Monte Carlo (MC) and their combination and interface with other simulation methods such as quantum mechanical molecular dynamics, density functional tight binding molecular dynamics, and combination of MD and MC. We also address the latest investigation of the influences of the hydrogen and oxygen on the synthesis and the quality of the synthesized graphene.
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Affiliation(s)
- Mohammad Rezwan Habib
- State Key Laboratory of Silicon Materials, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China
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34
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No YS, Choi HK, Kim JS, Kim H, Yu YJ, Choi CG, Choi JS. Layer number identification of CVD-grown multilayer graphene using Si peak analysis. Sci Rep 2018; 8:571. [PMID: 29330376 PMCID: PMC5766578 DOI: 10.1038/s41598-017-19084-1] [Citation(s) in RCA: 27] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/31/2017] [Accepted: 12/21/2017] [Indexed: 11/27/2022] Open
Abstract
Since the successful exfoliation of graphene, various methodologies have been developed to identify the number of layers of exfoliated graphene. The optical contrast, Raman G-peak intensity, and 2D-peak line-shape are currently widely used as the first level of inspection for graphene samples. Although the combination analysis of G- and 2D-peaks is powerful for exfoliated graphene samples, its use is limited in chemical vapor deposition (CVD)-grown graphene because CVD-grown graphene consists of various domains with randomly rotated crystallographic axes between layers, which makes the G- and 2D-peaks analysis difficult for use in number identification. We report herein that the Raman Si-peak intensity can be a universal measure for the number identification of multilayered graphene. We synthesized a few-layered graphene via the CVD method and performed Raman spectroscopy. Moreover, we measured the Si-peak intensities from various individual graphene domains and correlated them with the corresponding layer numbers. We then compared the normalized Si-peak intensity of the CVD-grown multilayer graphene with the exfoliated multilayer graphene as a reference and successfully identified the layer number of the CVD-grown graphene. We believe that this Si-peak analysis can be further applied to various 2-dimensional (2D) materials prepared by both exfoliation and chemical growth.
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Affiliation(s)
- You-Shin No
- Department of Physics, Konkuk University, Seoul, 05029, Korea
| | - Hong Kyw Choi
- Emerging Devices Research Group, Electronics and Telecommunications Research Institute (ETRI), Daejeon, 34129, Korea
| | - Jin-Soo Kim
- Department of Physics, Korea University, Seoul, 02841, Korea
| | - Hakseong Kim
- Korea Research Institute of Standards and Science (KRISS), Daejeon, 34113, Korea
| | - Young-Jun Yu
- Department of Physics, Chungnam National University, Daejeon, 34134, Korea
| | - Choon-Gi Choi
- Graphene Research Lab., Emerging Devices Research Group, Electronics and Telecommunications Research Institute (ETRI), Daejeon, 34129, Korea
| | - Jin Sik Choi
- Department of Physics, Konkuk University, Seoul, 05029, Korea.
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35
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Zhang PZ, Liu R, Sun LD, Dong H, Li LD, Zheng XY, Wu K, Yan CH. Phase segregation enabled scandium fluoride–lanthanide fluoride Janus nanoparticles. Inorg Chem Front 2018. [DOI: 10.1039/c8qi00328a] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/30/2022]
Abstract
A phase-segregation based protocol enables the fabrication of a series of scandium fluoride–lanthanide fluoride Janus particles.
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Affiliation(s)
- Pei-Zhi Zhang
- Beijing National Laboratory for Molecular Sciences
- State Key Laboratory of Rare Earth Materials Chemistry and Applications
- PKU-HKU Joint Laboratory in Rare Earth Materials and Bioinorganic Chemistry
- College of Chemistry and Molecular Engineering
- Peking University
| | - Rui Liu
- Beijing National Laboratory for Molecular Sciences
- State Key Laboratory of Rare Earth Materials Chemistry and Applications
- PKU-HKU Joint Laboratory in Rare Earth Materials and Bioinorganic Chemistry
- College of Chemistry and Molecular Engineering
- Peking University
| | - Ling-Dong Sun
- Beijing National Laboratory for Molecular Sciences
- State Key Laboratory of Rare Earth Materials Chemistry and Applications
- PKU-HKU Joint Laboratory in Rare Earth Materials and Bioinorganic Chemistry
- College of Chemistry and Molecular Engineering
- Peking University
| | - Hao Dong
- Beijing National Laboratory for Molecular Sciences
- State Key Laboratory of Rare Earth Materials Chemistry and Applications
- PKU-HKU Joint Laboratory in Rare Earth Materials and Bioinorganic Chemistry
- College of Chemistry and Molecular Engineering
- Peking University
| | - Lin-Dong Li
- Beijing National Laboratory for Molecular Sciences
- State Key Laboratory of Rare Earth Materials Chemistry and Applications
- PKU-HKU Joint Laboratory in Rare Earth Materials and Bioinorganic Chemistry
- College of Chemistry and Molecular Engineering
- Peking University
| | - Xiao-Yu Zheng
- Beijing National Laboratory for Molecular Sciences
- State Key Laboratory of Rare Earth Materials Chemistry and Applications
- PKU-HKU Joint Laboratory in Rare Earth Materials and Bioinorganic Chemistry
- College of Chemistry and Molecular Engineering
- Peking University
| | - Ke Wu
- Beijing National Laboratory for Molecular Sciences
- State Key Laboratory of Rare Earth Materials Chemistry and Applications
- PKU-HKU Joint Laboratory in Rare Earth Materials and Bioinorganic Chemistry
- College of Chemistry and Molecular Engineering
- Peking University
| | - Chun-Hua Yan
- Beijing National Laboratory for Molecular Sciences
- State Key Laboratory of Rare Earth Materials Chemistry and Applications
- PKU-HKU Joint Laboratory in Rare Earth Materials and Bioinorganic Chemistry
- College of Chemistry and Molecular Engineering
- Peking University
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36
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Ye H, Zhou J, Er D, Price CC, Yu Z, Liu Y, Lowengrub J, Lou J, Liu Z, Shenoy VB. Toward a Mechanistic Understanding of Vertical Growth of van der Waals Stacked 2D Materials: A Multiscale Model and Experiments. ACS NANO 2017; 11:12780-12788. [PMID: 29206441 DOI: 10.1021/acsnano.7b07604] [Citation(s) in RCA: 18] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/18/2023]
Abstract
Vertical stacking of monolayers via van der Waals (vdW) interaction opens promising routes toward engineering physical properties of two-dimensional (2D) materials and designing atomically thin devices. However, due to the lack of mechanistic understanding, challenges remain in the controlled fabrication of these structures via scalable methods such as chemical vapor deposition (CVD) onto substrates. In this paper, we develop a general multiscale model to describe the size evolution of 2D layers and predict the necessary growth conditions for vertical (initial + subsequent layers) versus in-plane lateral (monolayer) growth. An analytic thermodynamic criterion is established for subsequent layer growth that depends on the sizes of both layers, the vdW interaction energies, and the edge energy of 2D layers. Considering the time-dependent growth process, we find that temperature and adatom flux from vapor are the primary criteria affecting the self-assembled growth. The proposed model clearly demonstrates the distinct roles of thermodynamic and kinetic mechanisms governing the final structure. Our model agrees with experimental observations of various monolayer and bilayer transition metal dichalcogenides grown by CVD and provides a predictive framework to guide the fabrication of vertically stacked 2D materials.
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Affiliation(s)
- Han Ye
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications , Beijing 100876, China
- Department of Materials Science and Engineering, University of Pennsylvania , Philadelphia, Pennsylvania 19104, United States
| | - Jiadong Zhou
- Centre for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University , Singapore 639798, Singapore
| | - Dequan Er
- Department of Materials Science and Engineering, University of Pennsylvania , Philadelphia, Pennsylvania 19104, United States
| | - Christopher C Price
- Department of Materials Science and Engineering, University of Pennsylvania , Philadelphia, Pennsylvania 19104, United States
| | - Zhongyuan Yu
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications , Beijing 100876, China
| | - Yumin Liu
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications , Beijing 100876, China
| | - John Lowengrub
- Departments of Mathematics and Chemical Engineering & Materials Science, University of California , Irvine, California 92697, United States
| | - Jun Lou
- Department of Materials Science and NanoEngineering, Rice University , Houston, Texas 77005, United States
| | - Zheng Liu
- Centre for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University , Singapore 639798, Singapore
| | - Vivek B Shenoy
- Department of Materials Science and Engineering, University of Pennsylvania , Philadelphia, Pennsylvania 19104, United States
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37
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Chemical etching of copper foils for single-layer graphene growth by chemical vapor deposition. Chem Phys Lett 2017. [DOI: 10.1016/j.cplett.2017.07.035] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/19/2022]
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38
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Di Bernardo I, Avvisati G, Mariani C, Motta N, Chen C, Avila J, Asensio MC, Lupi S, Ito Y, Chen M, Fujita T, Betti MG. Two-Dimensional Hallmark of Highly Interconnected Three-Dimensional Nanoporous Graphene. ACS OMEGA 2017; 2:3691-3697. [PMID: 31457683 PMCID: PMC6641586 DOI: 10.1021/acsomega.7b00706] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/30/2017] [Accepted: 07/05/2017] [Indexed: 05/24/2023]
Abstract
Scaling graphene from a two-dimensional (2D) ideal structure to a three-dimensional (3D) millimeter-sized architecture without compromising its remarkable electrical, optical, and thermal properties is currently a great challenge to overcome the limitations of integrating single graphene flakes into 3D devices. Herewith, highly connected and continuous nanoporous graphene (NPG) samples, with electronic and vibrational properties very similar to those of suspended graphene layers, are presented. We pinpoint the hallmarks of 2D ideal graphene scaled in these 3D porous architectures by combining the state-of-the-art spectromicroscopy and imaging techniques. The connected and bicontinuous topology, without frayed borders and edges and with low density of crystalline defects, has been unveiled via helium ion, Raman, and transmission electron microscopies down to the atomic scale. Most importantly, nanoscanning photoemission unravels a 3D NPG structure with preserved 2D electronic density of states (Dirac cone like) throughout the porous sample. Furthermore, the high spatial resolution brings to light the interrelationship between the topology and the morphology in the wrinkled and highly bent regions, where distorted sp2 C bonds, associated with sp3-like hybridization state, induce small energy gaps. This highly connected graphene structure with a 3D skeleton overcomes the limitations of small-sized individual graphene sheets and opens a new route for a plethora of applications of the 2D graphene properties in 3D devices.
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Affiliation(s)
- Iolanda Di Bernardo
- Department
of Physics, Sapienza University of Rome, Piazzale Aldo Moro 2, 00185 Rome, Italy
| | - Giulia Avvisati
- Department
of Physics, Sapienza University of Rome, Piazzale Aldo Moro 2, 00185 Rome, Italy
| | - Carlo Mariani
- Department
of Physics, Sapienza University of Rome, Piazzale Aldo Moro 2, 00185 Rome, Italy
| | - Nunzio Motta
- School
of Chemistry, Physics and Mechanical Engineering and Institute for
Future Environments, Queensland University
of Technology, 2 George
Street, 4000 Brisbane, Australia
| | - Chaoyu Chen
- Synchrotron
SOLEIL, L’Orme des Merisiers, Saint Aubin, 91190 Gif sur Yvette, France
| | - José Avila
- Synchrotron
SOLEIL, L’Orme des Merisiers, Saint Aubin, 91190 Gif sur Yvette, France
| | - Maria Carmen Asensio
- Synchrotron
SOLEIL, L’Orme des Merisiers, Saint Aubin, 91190 Gif sur Yvette, France
| | - Stefano Lupi
- Department
of Physics, CNR-IOM, Sapienza University
of Rome, Piazzale Aldo Moro 2, 00185 Rome, Italy
| | - Yoshikazu Ito
- Institute
of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, 305-8571 Tsukuba, Japan
- PRESTO,
Japan Science and Technology Agency, 332-0012 Saitama, Japan
| | - Mingwei Chen
- Advanced
Institute for Materials Research, Tohoku University, 980-8577 Sendai, Japan
| | - Takeshi Fujita
- Advanced
Institute for Materials Research, Tohoku University, 980-8577 Sendai, Japan
| | - Maria Grazia Betti
- Department
of Physics, Sapienza University of Rome, Piazzale Aldo Moro 2, 00185 Rome, Italy
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39
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Pang J, Mendes RG, Wrobel PS, Wlodarski MD, Ta HQ, Zhao L, Giebeler L, Trzebicka B, Gemming T, Fu L, Liu Z, Eckert J, Bachmatiuk A, Rümmeli MH. Self-Terminating Confinement Approach for Large-Area Uniform Monolayer Graphene Directly over Si/SiO x by Chemical Vapor Deposition. ACS NANO 2017; 11:1946-1956. [PMID: 28117971 DOI: 10.1021/acsnano.6b08069] [Citation(s) in RCA: 19] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
To synthesize graphene by chemical vapor deposition (CVD) both in large area and with uniform layer number directly over Si/SiOx has proven challenging. The use of catalytically active metal substrates, in particular Cu, has shown far greater success and therefore is popular. That said, for electronics applications it requires a transfer procedure, which tends to damage and contaminate the graphene. Thus, the direct fabrication of uniform graphene on Si/SiOx remains attractive. Here we show a facile confinement CVD approach in which we simply "sandwich" two Si wafers with their oxide faces in contact to form uniform monolayer graphene. A thorough examination of the material reveals it comprises faceted grains despite initially nucleating as round islands. Upon clustering, they facet to minimize their energy. This behavior leads to faceting in polygons, as the system aims to ideally form hexagons, the lowest energy form, much like the hexagonal cells in a beehive, which requires the minimum wax. This process also leads to a near minimal total grain boundary length per unit area. This fact, along with the high graphene quality, is reflected in its electrical performance, which is highly comparable with graphene formed over other substrates, including Cu. In addition, the graphene growth is self-terminating. Our CVD approach is easily scalable and will make graphene formation directly on Si wafers competitive against that from metal substrates, which suffer from transfer. Moreover, this CVD route should be applicable for the direct synthesis of other 2D materials and their van der Waals heterostructures.
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Affiliation(s)
- Jinbo Pang
- IFW-Dresden , Helmholtz Strasse 20, D-01171 Dresden, Germany
| | - Rafael G Mendes
- IFW-Dresden , Helmholtz Strasse 20, D-01171 Dresden, Germany
| | - Pawel S Wrobel
- Centre of Polymer and Carbon Materials, Polish Academy of Sciences , ul. M. Curie-Sklodowskiej 34, Zabrze, PL-41-819 Zabrze, Poland
| | - Michal D Wlodarski
- Centre of Polymer and Carbon Materials, Polish Academy of Sciences , ul. M. Curie-Sklodowskiej 34, Zabrze, PL-41-819 Zabrze, Poland
| | - Huy Quang Ta
- IFW-Dresden , Helmholtz Strasse 20, D-01171 Dresden, Germany
- Centre of Polymer and Carbon Materials, Polish Academy of Sciences , ul. M. Curie-Sklodowskiej 34, Zabrze, PL-41-819 Zabrze, Poland
| | | | - Lars Giebeler
- IFW-Dresden , Helmholtz Strasse 20, D-01171 Dresden, Germany
| | - Barbara Trzebicka
- Centre of Polymer and Carbon Materials, Polish Academy of Sciences , ul. M. Curie-Sklodowskiej 34, Zabrze, PL-41-819 Zabrze, Poland
| | - Thomas Gemming
- IFW-Dresden , Helmholtz Strasse 20, D-01171 Dresden, Germany
| | - Lei Fu
- College of Chemistry and Molecular Science, Wuhan University , Wuhan, 430072, China
| | - Zhongfan Liu
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, College of Chemistry and Molecular Engineering, Peking University , Beijing 100871, China
| | - Juergen Eckert
- Erich Schmid Institute of Materials Science, Austrian Academy of Sciences , Jahnstraße 12, A-8700 Leoben, Austria
- Department Materials Physics, Montanuniversität Leoben , Jahnstraße 12, A-8700 Leoben, Austria
| | - Alicja Bachmatiuk
- IFW-Dresden , Helmholtz Strasse 20, D-01171 Dresden, Germany
- Centre of Polymer and Carbon Materials, Polish Academy of Sciences , ul. M. Curie-Sklodowskiej 34, Zabrze, PL-41-819 Zabrze, Poland
| | - Mark H Rümmeli
- IFW-Dresden , Helmholtz Strasse 20, D-01171 Dresden, Germany
- Centre of Polymer and Carbon Materials, Polish Academy of Sciences , ul. M. Curie-Sklodowskiej 34, Zabrze, PL-41-819 Zabrze, Poland
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40
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Borah M, Pathak AK, Singh DK, Pal P, Dhakate SR. Role of limited hydrogen and flow interval on the growth of single crystal to continuous graphene by low-pressure chemical vapor deposition. NANOTECHNOLOGY 2017; 28:075602. [PMID: 28084223 DOI: 10.1088/1361-6528/aa527e] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
A method for defect-free large crystallite graphene growth remains unknown despite much research effort. In this work, we discuss the role of flow duration of H2 gas for the production of graphene as per requirement and production at a minimum flow rate considering the safety issue of hydrogen utilization. The copper substrate used for growth was treated for different time intervals (0 to 35 min) in H2 flow prior to growth. Structural and chemical changes occurring in the copper substrate surface were probed by grazing incidence x-ray diffraction and x-ray photoelectron spectroscopy. The results were correlated with the Raman spectroscopy data, which can quantify the quality of graphene. With increasing H2 flow interval, secondary nucleation sites were observed and growth favored few-layer graphene structures. The surface-adsorbed oxygen molecules and its conversion to an OH terminated surface with increasing hydrogen flow interval was found to be a key factor in enhancing nucleation density. The Stranski-Krastanov type of nucleation was observed for samples grown with different time intervals of H2 treatment, except 5 min of H2 flow prior to growth for which the Volmer-Weber type of growth favored monolayer graphene crystallite growth.
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Affiliation(s)
- Munu Borah
- Advanced Carbon Products section, Advanced Materials and Devices Division, CSIR-National Physical Laboratory, New Delhi-110012, India. Academy of Scientific & Innovative Research (AcSIR), CSIR-NPL, New Delhi-110012, India
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