Boosting Solar Cell Photovoltage via Nanophotonic Engineering

Nanowires: Exponential speedup in quantum computing

This review paper examines the crucial role of nanowires in the field of quantum computing, highlighting their importance as versatile platforms for qubits and vital building blocks for creating fault-tolerant and scalable quantum information processing systems. Researchers are studying many categories of nanowires, including semiconductor, superconducting, and topological nanowires, to explore their distinct quantum features that play a role in creating various qubit designs. The paper explores the interdisciplinary character of quantum computing, combining the fields of quantum physics and materials science. This text highlights the significance of quantum gate operations in manipulating qubits for computation, thus creating the toolbox of quantum algorithms. The paper emphasizes the key research areas in quantum technology, such as entanglement engineering, quantum error correction, and a wide range of applications spanning from encryption to climate change modeling. The research highlights the importance of tackling difficulties related to decoding mitigation, error correction, and hardware scalability to fully utilize the transformative potential of quantum computing in scientific, technical, and computational fields.

Formation and characterization of Group IV semiconductor nanowires

To enable the application to next-generation devices of semiconductor nanowires (NWs), it is important to control their formation and tune their functionality by doping and the use of heterojunctions. In this paper, we introduce formation and the characterization methods of nanowires, focusing on our research results. We describe a top-down method of controlling the size and alignment of nanowires that shows advantages over bottom-up growth methods. The latter technique causes damage to the nanowire surfaces, requiring defect removal after the NW formation process. We show various methods of evaluating the bonding state and electrical activity of impurities in NWs. If an impurity is doped in a NW, mobility decreases due to the scattering that it causes. As a strategy for solving this problem, we describe research into core-shell nanowires, in which Si and Ge heterojunctions are formed in the diameter direction inside the NW. This structure can separate the impurity-doped region from the carrier transport region, promising as a channel for the new ultimate high-mobility transistor.

Nanoscale Characterization of Photocurrent and Photovoltage in Polycrystalline Solar Cells

We investigate the role of grain structures in nanoscale carrier dynamics of polycrystalline solar cells. By using Kelvin probe force microscopy (KPFM) and near-field scanning photocurrent microscopy (NSPM) techniques, we characterize nanoscopic photovoltage and photocurrent patterns of inorganic CdTe and organic-inorganic hybrid perovskite solar cells. For CdTe solar cells, we analyze the nanoscale electric power patterns that are created by correlating nanoscale photovoltage and photocurrent maps on the same location. Distinct relations between the sample preparation conditions and the nanoscale photovoltaic properties of microscopic CdTe grain structures are observed. The same techniques are applied for characterization of a perovskite solar cell. It is found that a moderate amount of PbI₂ near grain boundaries leads to the enhanced photogenerated carrier collections at grain boundaries. Finally, the capabilities and the limitations of the nanoscale techniques are discussed.

GaAs/GaInP nanowire solar cell on Si with state-of-the-art Voc and quasi-Fermi level splitting

With their unique structural, optical and electrical properties, III-V nanowires (NWs) are an extremely attractive option for the direct growth of III-Vs on Si for tandem solar cell applications. Here, we introduce a core-shell GaAs/GaInP NW solar cell grown by molecular beam epitaxy on a patterned Si substrate, and we present an in-depth investigation of its optoelectronic properties and limitations. We report a power conversion efficiency of almost 3.7%, and a state-of-the-art open-circuit voltage (V_OC) for a NW array solar cell on Si of 0.65 V. We also present the first quantification of the quasi-Fermi level splitting in NW array solar cells using hyperspectral photoluminescence measurements. A value of 0.84 eV is obtained at 1 sun (1.01 eV at 81 suns), which is significantly higher than qV_OC. It indicates NWs with a better intrinsic optoelectronic quality than what could be expected from TEM images or deduced from electrical measurements. Optical and electronic simulations provide insights into the main absorption and electrical losses, and guidelines to design and fabricate higher-efficiency devices. It suggests that improvements at the n-type contact (GaInP/ITO) are key to unlocking the potential of next generation NW solar cells.

Surface-Tailored InP Nanowires via Self-Assembled Au Nanodots for Efficient and Stable Photoelectrochemical Hydrogen Evolution

With a band gap close to the Shockley-Quiesser limit and excellent conduction band alignment with the water reduction potential, InP is an ideal photocathode material for photoelectrochemical (PEC) water reduction. Here, we develop facile self-assembled Au nanodots based on dewetting phenomena as a masking technique to fabricate wafer-scale InP nanowires (NWs) via a top-down approach. In addition, we report dual-function wet treatment using sulfur-dissolved oleylamine (S-OA) to remove a plasma-damaged surface in a controlled manner and stabilize InP NWs against surface corrosion in harsh electrolyte solutions. The resulting InP NW photocathodes exhibit an excellent photocurrent density of 33 mA/cm² under 1 sun illumination in 1 M HCl with a highly stabilized performance without needing additional protection layers. Our approach combining large-area NW fabrication and surface engineering synergistically enhances light harvesting and PEC performance and stability, thereby providing a pathway for the development of efficient and durable InP photoelectrodes in a scalable manner.

Photonics for Photovoltaics: Advances and Opportunities

Photovoltaic systems have reached impressive efficiencies, with records in the range of 20-30% for single-junction cells based on many different materials, yet the fundamental Shockley-Queisser efficiency limit of 34% is still out of reach. Improved photonic design can help approach the efficiency limit by eliminating losses from incomplete absorption or nonradiative recombination. This Perspective reviews nanopatterning methods and metasurfaces for increased light incoupling and light trapping in light absorbers and describes nanophotonics opportunities to reduce carrier recombination and utilize spectral conversion. Beyond the state-of-the-art single junction cells, photonic design plays a crucial role in the next generation of photovoltaics, including tandem and self-adaptive solar cells, and to extend the applicability of solar cells in many different ways. We address the exciting research opportunities and challenges in photonic design principles and fabrication that will accelerate the massive upscaling and (invisible) integration of photovoltaics into every available surface.

Nanoscale Photovoltaic Responses in 3D Radial Junction Solar Cells Revealed by High Spatial Resolution Laser Excitation Photoelectric Microscopy

The actual light absorption photovoltaic responses realized in three-dimensional (3D) radial junction (RJ) units can be rather different from their planar counterparts and remain largely unexplored. We here adopt a laser excitation photoelectric microscope (LEPM) technology to probe the local light harvesting and photoelectric signals of 3D hydrogenated amorphous silicon (a-Si:H) RJ thin film solar cells constructed over a Si nanowire (SiNW) matrix, with a high spatial resolution of 600 nm thanks to the use of a high numerical aperture objective. The LEPM scan can help to resolve clearly the impacts of local structural damages, which are invisible to optical and SEM observations. More importantly, the high-resolution photoelectric mapping establishes a straightforward link between the local 3D geometry of RJ units and their light conversion performance. Surprisingly, it is found that the maximal photoelectric signals are usually recorded in the void locations among the standing SiNW RJs, instead of the overhead positions above the RJs. This phenomenon can be well explained and reproduced by finite element simulation analysis, which highlights unambiguously the dominant contribution of inter-RJ-unit scattering against direct mode incoupling in the 3D solar cell architecture. This LEPM mapping technology and the results help to achieve a straightforward and high-resolution evaluation of the local photovoltaic responses among the 3D RJ units, providing a solid basis for further structural optimization and performance improvement.

Synthesis and Applications of III-V Nanowires

Low-dimensional semiconductor materials structures, where nanowires are needle-like one-dimensional examples, have developed into one of the most intensely studied fields of science and technology. The subarea described in this review is compound semiconductor nanowires, with the materials covered limited to III-V materials (like GaAs, InAs, GaP, InP,...) and III-nitride materials (GaN, InGaN, AlGaN,...). We review the way in which several innovative synthesis methods constitute the basis for the realization of highly controlled nanowires, and we combine this perspective with one of how the different families of nanowires can contribute to applications. One reason for the very intense research in this field is motivated by what they can offer to main-stream semiconductors, by which ultrahigh performing electronic (e.g., transistors) and photonic (e.g., photovoltaics, photodetectors or LEDs) technologies can be merged with silicon and CMOS. Other important aspects, also covered in the review, deals with synthesis methods that can lead to dramatic reduction of cost of fabrication and opportunities for up-scaling to mass production methods.

Increasing Photoluminescence Quantum Yield by Nanophotonic Design of Quantum-Confined Halide Perovskite Nanowire Arrays

High-photoluminescence quantum yield (PLQY) is required to reach optimal performance in solar cells, lasers, and light-emitting diodes (LEDs). Typically, PLQY can be increased by improving the material quality to reduce the nonradiative recombination rate. It is in principle equally effective to improve the optical design by nanostructuring a material to increase light out-coupling efficiency (OCE) and introduce quantum confinement, both of which can increase the radiative recombination rate. However, increased surface recombination typically minimizes nanostructure gains in PLQY. Here a template-guided vapor phase growth of CH₃NH₃PbI₃ (MAPbI₃) nanowire (NW) arrays with unprecedented control of NW diameter from the bulk (250 nm) to the quantum confined regime (5.7 nm) is demonstrated, while simultaneously providing a low surface recombination velocity of 18 cm s^-1. This enables a 56-fold increase in the internal PLQY, from 0.81% to 45.1%, and a 2.3-fold increase in OCEy to increase the external PLQY by a factor of 130, from 0.33% up to 42.6%, exclusively using nanophotonic design.

Nanowires for High-Efficiency, Low-Cost Solar Photovoltaics

Solar energy is abundant, clean, and renewable, making it an ideal energy source. Solar cells are a good option to harvest this energy. However, it is difficult to balance the cost and efficiency of traditional thin-film solar cells, whereas nanowires (NW) are far superior in making high-efficiency low-cost solar cells. Therefore, the NW solar cell has attracted great attention in recent years and is developing rapidly. Here, we review the great advantages, recent breakthroughs, novel designs, and remaining challenges of NW solar cells. Special attention is given to (but not limited to) the popular semiconductor NWs for solar cells, in particular, Si, GaAs(P), and InP.

Growth kinetics of Ga x In(1-x)P nanowires using triethylgallium as Ga precursor

Ga _x In_(1-x)P nanowire arrays are promising for various optoelectronic applications with a tunable band-gap over a wide range. In particular, they are well suited as the top cell in tandem junction solar cell devices. So far, most Ga _x In_(1-x)P nanowires have been synthesized by the use of trimethylgallium (TMGa). However, particle assisted nanowire growth in metal organic vapor phase epitaxy is typically carried out at relatively low temperatures, where TMGa is not fully pyrolysed. In this work, we developed the growth of Ga _x In_(1-x)P nanowires using triethylgallium (TEGa) as the Ga precursor, which reduced Ga precursor consumption by about five times compared to TMGa due to the lower homogeneous pyrolysis temperature of TEGa. The versatility of TEGa is shown by synthesis of high yield Ga _x In_(1-x)P nanowire arrays, with a material composition tunable by the group III input flows, as verified by x-ray diffraction measurements and photoluminescence characterization. The growth dynamics of Ga _x In_(1-x)P nanowires was assessed by varying the input growth precursor molar fractions and growth temperature, using hydrogen-chloride as in situ etchant. We observed a complex interplay between the precursors. First, trimethylindium (TMIn) inhibits Ga incorporation into the nanowires, resulting in higher In composition in the grown nanowires than in the vapor. Second, the growth rate increases with temperature, indicating a kinetically limited growth, which from nanowire effective binary volume growth rates of InP and GaP can be attributed to the synthesis of GaP in Ga _x In_(1-x)P. We observed that phosphine has a strong effect on the nanowire growth rate with behavior expected for a unimolecular Langmuir-Hinshelwood mechanism of pyrolysis on a catalytic surface. However, growth rates increase strongly with both TEGa and TMIn precursors as well, indicating the complexity of vapor-liquid-solid growth for ternary materials. One precursor can affect the decomposition of another, and each precursor can affect the wetting properties and catalytic activity of the metal particle.

Charge carrier-selective contacts for nanowire solar cells

Charge carrier-selective contacts transform a light-absorbing semiconductor into a photovoltaic device. Current record efficiency solar cells nearly all use advanced heterojunction contacts that simultaneously provide carrier selectivity and contact passivation. One remaining challenge with heterojunction contacts is the tradeoff between better carrier selectivity/contact passivation (thicker layers) and better carrier extraction (thinner layers). Here we demonstrate that the nanowire geometry can remove this tradeoff by utilizing a permanent local gate (molybdenum oxide surface layer) to control the carrier selectivity of an adjacent ohmic metal contact. We show an open-circuit voltage increase for single indium phosphide nanowire solar cells by up to 335 mV, ultimately reaching 835 mV, and a reduction in open-circuit voltage spread from 303 to 105 mV after application of the surface gate. Importantly, reference experiments show that the carriers are not extracted via the molybdenum oxide but the ohmic metal contacts at the wire ends.

Balancing the carrier selectivity and extraction by the selective contacts is of vital importance to the performance of the nanowire solar cells. Here Oener et al. employ a permanent local gate to overcome this tradeoff and substantially increase the open-circuit voltage by 335 mV.

Twofold origin of strain-induced bending in core-shell nanowires: the GaP/InGaP case

Nanowires have emerged as a promising platform for the development of novel and high-quality heterostructures at large lattice misfit, inaccessible in a thin film configuration. However, despite core-shell nanowires allowing a very efficient elastic release of the misfit strain, the growth of highly uniform arrays of nanowire heterostructures still represents a challenge, for example due to a strain-induced bending morphology. Here we investigate the bending of wurtzite GaP/In _x Ga_1-x P core-shell nanowires using transmission electron microscopy and energy dispersive x-ray spectroscopy, both in terms of geometric and compositional asymmetry with respect to the longitudinal axis. We compare the experimental data with finite element method simulations in three dimensions, showing that both asymmetries are responsible for the actual bending. Such findings are valid for all lattice-mismatched core-shell nanowire heterostructures based on ternary alloys. Our work provides a quantitative understanding of the bending effect in general while also suggesting a strategy to minimise it.

Time-resolved photoluminescence characterization of GaAs nanowire arrays on native substrate

Time-resolved photoluminescence (TRPL) measurements of nanowires (NWs) are often carried out on broken-off NWs in order to avoid the ensemble effects as well as substrate contribution. However, the development of NW-array solar cells could benefit from non-destructive optical characterization to allow faster feedback and further device processing. With this work, we show that different NW array and substrate spectral behaviors with delay time and excitation power can be used to determine which part of the sample dominates the detected spectrum. Here, we evaluate TRPL characterization of dense periodic as-grown GaAs NW arrays on a p-type GaAs substrate, including a sample with uncapped GaAs NWs and several samples passivated with AlGaAs radial shell of varied composition and thickness. We observe a strong spectral overlap of substrate and NW signals and find that the NWs can absorb part of the substrate luminescence signal, thus resulting in a modified substrate signal. The level of absorption depends on the NW-array geometry, making a deconvolution of the NW signal very difficult. By studying TRPL of substrate-only and as-grown NWs at 770 and 400 nm excitation wavelengths, we find a difference in spectral behavior with delay time and excitation power that can be used to assess whether the signal is dominated by the NWs. We find that the NW signal dominates with 400 nm excitation wavelength, where we observe two different types of excitation power dependence for the NWs capped with high and low Al composition shells. Finally, from the excitation power dependence of the peak TRPL signal, we extract an estimate of background carrier concentration in the NWs.

Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer

III/V semiconductor nanostructures have significant potential in device applications, but effective surface passivation is critical due to their large surface-to-volume ratio. For InP such passivation has proven particularly difficult, with substantial depassivation generally observed following dielectric deposition on InP surfaces. We present a novel approach based on passivation with a phosphorus-rich interfacial oxide deposited using a low-temperature process, which is critical to avoid P-desorption. For this purpose we have chosen a PO_x layer deposited in a plasma-assisted atomic layer deposition (ALD) system at room temperature. Since PO_x is known to be hygroscopic and therefore unstable in atmosphere, we encapsulate this layer with a thin ALD Al₂O₃ capping layer to form a PO_x/Al₂O₃ stack. This passivation scheme is capable of improving the photoluminescence (PL) efficiency of our state-of-the-art wurtzite (WZ) InP nanowires by a factor of ∼20 at low excitation. If we apply the rate equation analysis advocated by some authors, we derive a PL internal quantum efficiency (IQE) of 75% for our passivated wires at high excitation. Our results indicate that it is more reliable to calculate the IQE as the ratio of the integrated PL intensity at room temperature to that at 10 K. By this means we derive an IQE of 27% for the passivated wires at high excitation (>10 kW cm^-2), which constitutes an unprecedented level of performance for undoped InP nanowires. This conclusion is supported by time-resolved PL decay lifetimes, which are also shown to be significantly higher than previously reported for similar wires. The passivation scheme displays excellent long-term stability (>7 months) and is additionally shown to substantially improve the thermal stability of InP surfaces (>300 °C), significantly expanding the temperature window for device processing. Such effective surface passivation is a key enabling technology for InP nanowire devices such as nanolasers and solar cells.

Nanoscale Back Contact Perovskite Solar Cell Design for Improved Tandem Efficiency

Tandem photovoltaics, combining absorber layers with two distinct band gap energies into a single device, provide a practical solution to reduce thermalization losses in solar energy conversion. Traditionally, tandem devices have been assembled using two-terminal (2-T) or four-terminal (4-T) configurations; the 2-T limits the tandem performance due to the series connection requiring current matching, while the standard 4-T configuration requires at least three transparent electrical contacts, which reduce the total collected power due to unavoidable parasitic absorption. Here, we introduce a novel architecture based on a nanoscale back-contact for a thin-film top cell in a three terminal (3-T) configuration. Using coupled optical-electrical modeling, we optimize this architecture for a planar perovskite-silicon tandem, highlighting the roles of nanoscale contacts to reduce the required perovskite electronic quality. For example, with an 18% planar silicon base cell, the 3-T back contact design can reach a 32.9% tandem efficiency with a 10 μm diffusion length perovskite material. Using the same perovskite quality, the 4-T and 2-T configurations only reach 30.2% and 24.8%, respectively. We also confirm that the same 3-T efficiency advantage applies when using 25% efficient textured silicon base cells, where the tandems reach 35.2% and 32.8% efficiency for the 3-T, and 4-T configurations, respectively. Furthermore, because our design is based on the individual subcells being back-contacted, further improvements can be readily made by optimizing the front surface, which is left free for additional antireflective coating, light trapping, surface passivation, and photoluminescence outcoupling enhancements.

Boosting magnetic field enhancement with radiative couplings of magnetic modes in dielectric nanostructures

Dielectric nanostructures can readily support considerable magnetic field enhancements that offer great potential applications in field enhanced spectroscopies. However, the magnetic fields of dielectric structures are usually distributed within the entire volume, which brings challenge to the further increment of the magnetic field enhancement. Here, we theoretically demonstrate that the magnetic field enhancement in dielectric nanostructures can be boosted through the radiative couplings of magnetic modes. Our concentric structure consists of a hollow disk and a ring. The disk has a magnetic dipole mode. The ring has two magnetic dipole modes that are out of phase. Strong radiative interactions between the modes on the disk and the ring can occur, which result in a net constructive coupling effect. For a lossless material with n = 3.3, a sharp peak can be obtained on the scattering spectrum of the coupled system due to the radiative interactions. The corresponding resonant magnetic field enhancement at the disk center reaches 96 times. This enhancement is about 7 times higher than that of an individual disk. The structure with a lossy material Si is also considered, where radiative couplings and boosted magnetic field can also be obtained. Our research reveals the strong radiative mode couplings in dielectric structures and is important for furthering our understanding on the light-matter interactions at the nanoscale.

Halide perovskite solar cells using monocrystalline TiO2 nanorod arrays as electron transport layers: impact of nanorod morphology

This is the first report of a 17.6% champion efficiency solar cell architecture comprising monocrystalline TiO₂ nanorods (TNRs) coupled with perovskite, and formed using facile solution processing without non-routine surface conditioning. Vertically oriented TNR ensembles are desirable as electron transporting layers (ETLs) in halide perovskite solar cells (HPSCs) because of potential advantages such as vectorial electron percolation pathways to balance the longer hole diffusion lengths in certain halide perovskite semiconductors, ease of incorporating nanophotonic enhancements, and optimization between a high contact surface area for charge transfer (good) versus high interfacial recombination (bad). These advantages arise from the tunable morphology of hydrothermally grown rutile TNRs, which is a strong function of the growth conditions. Fluorescence lifetime imaging microscopy of the HPSCs demonstrated a stronger quenching of the perovskite PL when using TNRs as compared to mesoporous/compact TiO₂ thin films. Due to increased interfacial contact area between the ETL and perovskite with easier pore filling, charge separation efficiency is dramatically enhanced. Additionally, solid-state impedance spectroscopy results strongly suggested the suppression of interfacial charge recombination between TNRs and perovskite layer, compared to other ETLs. The optimal ETL morphology in this study was found to consist of an array of TNRs ∼300 nm in length and ∼40 nm in width. This work highlights the potential of TNR ETLs to achieve high performance solution-processed HPSCs.

Towards higher electron mobility in modulation doped GaAs/AlGaAs core shell nanowires

Precise control over the electrical conductivity of semiconductor nanowires is a crucial prerequisite for implementation of these nanostructures into novel electronic and optoelectronic devices. Advances in our understanding of doping mechanisms in nanowires and their influence on electron mobility and radiative efficiency are urgently required. Here, we investigate the electronic properties of n-type modulation doped GaAs/AlGaAs nanowires via optical pump terahertz (THz) probe spectroscopy and photoluminescence spectroscopy over the temperature range 5 K-300 K. We directly determine an ionization energy of 6.7 ± 0.5 meV (T = 52 K) for the Si donors within the AlGaAs shell that create the modulation doping structure. We further elucidate the temperature dependence of the electron mobility, photoconductivity lifetime and radiative efficiency, and determine the charge-carrier scattering mechanisms that limit electron mobility. We show that below the donor ionization temperature, charge scattering is limited by interactions with interfaces, leading to an excellent electron mobility of 4360 ± 380 cm² V^-1 s^-1 at 5 K. Above the ionization temperature, polar scattering via longitudinal optical (LO) phonons dominates, leading to a room temperature mobility of 2220 ± 130 cm² V^-1 s^-1. In addition, we show that the Si donors effectively passivate interfacial trap states in the nanowires, leading to prolonged photoconductivity lifetimes with increasing temperature, accompanied by an enhanced radiative efficiency that exceeds 10% at room temperature.

Top-down fabricated tapered GaAs nanowires with sacrificial etching of the mask

A novel fabrication method using controlled sacrificial etching of the mask is utilized to fabricate tapered vertical GaAs nanowire arrays. Experimental measurements of the absorption characteristics show that the tapered nanowires absorb over a broadband range as compared to cylindrical ones. The broadband characterization is verified by using optical modeling and results from improved coupling of the nanowires due to distinct radial HE modes being excited separately in the taper and the cylindrical part. The absorption is found to be more broadband as compared to conical nanowires studied so far.

Scalable Indium Phosphide Thin-Film Nanophotonics Platform for Photovoltaic and Photoelectrochemical Devices

Recent developments in nanophotonics have provided a clear roadmap for improving the efficiency of photonic devices through control over absorption and emission of devices. These advances could prove transformative for a wide variety of devices, such as photovoltaics, photoelectrochemical devices, photodetectors, and light-emitting diodes. However, it is often challenging to physically create the nanophotonic designs required to engineer the optical properties of devices. Here, we present a platform based on crystalline indium phosphide that enables thin-film nanophotonic structures with physical morphologies that are impossible to achieve through conventional state-of-the-art material growth techniques. Here, nanostructured InP thin films have been demonstrated on non-epitaxial alumina inverted nanocone (i-cone) substrates via a low-cost and scalable thin-film vapor-liquid-solid growth technique. In this process, indium films are first evaporated onto the i-cone structures in the desired morphology, followed by a high-temperature step that causes a phase transformation of the indium into indium phosphide, preserving the original morphology of the deposited indium. Through this approach, a wide variety of nanostructured film morphologies are accessible using only control over evaporation process variables. Critically, the as-grown nanotextured InP thin films demonstrate excellent optoelectronic properties, suggesting this platform is promising for future high-performance nanophotonic devices.

One-Dimensional Electron Transport Layers for Perovskite Solar Cells

The electron diffusion length (Ln) is smaller than the hole diffusion length (Lp) in many halide perovskite semiconductors meaning that the use of ordered one-dimensional (1D) structures such as nanowires (NWs) and nanotubes (NTs) as electron transport layers (ETLs) is a promising method of achieving high performance halide perovskite solar cells (HPSCs). ETLs consisting of oriented and aligned NWs and NTs offer the potential not merely for improved directional charge transport but also for the enhanced absorption of incoming light and thermodynamically efficient management of photogenerated carrier populations. The ordered architecture of NW/NT arrays affords superior infiltration of a deposited material making them ideal for use in HPSCs. Photoconversion efficiencies (PCEs) as high as 18% have been demonstrated for HPSCs using 1D ETLs. Despite the advantages of 1D ETLs, there are still challenges that need to be overcome to achieve even higher PCEs, such as better methods to eliminate or passivate surface traps, improved understanding of the hetero-interface and optimization of the morphology (i.e., length, diameter, and spacing of NWs/NTs). This review introduces the general considerations of ETLs for HPSCs, deposition techniques used, and the current research and challenges in the field of 1D ETLs for perovskite solar cells.

High-Efficiency Nanowire Solar Cells with Omnidirectionally Enhanced Absorption Due to Self-Aligned Indium-Tin-Oxide Mie Scatterers

Photovoltaic cells based on arrays of semiconductor nanowires promise efficiencies comparable or even better than their planar counterparts with much less material. One reason for the high efficiencies is their large absorption cross section, but until recently the photocurrent has been limited to less than 70% of the theoretical maximum. Here we enhance the absorption in indium phosphide (InP) nanowire solar cells by employing broadband forward scattering of self-aligned nanoparticles on top of the transparent top contact layer. This results in a nanowire solar cell with a photovoltaic conversion efficiency of 17.8% and a short-circuit current of 29.3 mA/cm² under 1 sun illumination, which is the highest reported so far for nanowire solar cells and among the highest reported for III-V solar cells. We also measure the angle-dependent photocurrent, using time-reversed Fourier microscopy, and demonstrate a broadband and omnidirectional absorption enhancement for unpolarized light up to 60° with a wavelength average of 12% due to Mie scattering. These results unambiguously demonstrate the potential of semiconductor nanowires as nanostructures for the next generation of photovoltaic devices.

Influence of growth conditions on the performance of InP nanowire solar cells

Nanowire based solar cells have attracted great attention due to their potential for high efficiency and low device cost. Photovoltaic devices based on InP nanowires now have characteristics comparable to InP bulk solar cells. A detailed and direct correlation of the influence of growth conditions on performance is necessary to improve efficiency further. We explored the effects of the growth temperature, and of the addition of HCl during growth, on the efficiency of nanowire array based solar cell devices. By increasing HCl, the saturation dark current was reduced, and thereby the nanowire solar cell efficiency was enhanced from less than 1% to 7.6% under AM 1.5 illumination at 1 sun. At the same time, we observed that the solar cell efficiency decreased by increasing the tri-methyl-indium content, strongly suggesting that these effects are carbon related.