Efficient Photothermoelectric Conversion in Lateral Topological Insulator Heterojunctions

Pulse irradiation synthesis of metal chalcogenides on flexible substrates for enhanced photothermoelectric performance

High synthesis temperatures and specific growth substrates are typically required to obtain crystalline or oriented inorganic functional thin films, posing a significant challenge for their utilization in large-scale, low-cost (opto-)electronic applications on conventional flexible substrates. Here, we explore a pulse irradiation synthesis (PIS) to prepare thermoelectric metal chalcogenide (e.g., Bi2Se3, SnSe2, and Bi2Te3) films on multiple polymeric substrates. The self-propagating combustion process enables PIS to achieve a synthesis temperature as low as 150 °C, with an ultrafast reaction completed within one second. Beyond the photothermoelectric (PTE) property, the thermal coupling between polymeric substrates and bismuth selenide films is also examined to enhance the PTE performance, resulting in a responsivity of 71.9 V/W and a response time of less than 50 ms at 1550 nm, surpassing most of its counterparts. This PIS platform offers a promising route for realizing flexible PTE or thermoelectric devices in an energy-, time-, and cost-efficient manner.

High thermoelectric performance of two-dimensional SiPGaS/As heterostructures

Thermoelectric technology holds great promise as a green and sustainable energy solution, generating electric power directly from waste heat. Herein, we investigate the thermoelectric properties of SiPGaS/As van der Waals heterostructures by using computations based on density functional theory and semiclassical Boltzmann transport theory. Our results show that both models of SiPGaS/As van der Waals heterostructures have low lattice thermal conductivity at room temperature (300 K). Applying 4% tensile strain to the models leads to a significant enhancement in the figure of merit (ZT), with model-I and model-II exhibiting ZT improvements of up to 24.5% and 14.8%, respectively. Notably, model-II outperforms all previously reported heterostructures in terms of ZT value. Additionally, we find that the maximum thermoelectric conversion efficiency (η) for model-II at 4% tensile strain reaches 23.98% at 700 K. Our predicted ZT_avg > 1 suggests that these materials have practical potential for thermoelectric applications over a wide temperature range. Overall, our findings offer valuable insights for designing better thermoelectric materials.

Pressure-Tailored Self-Driven and Broadband Photoresponse in PbI2

Photoelectric devices based on the photothermoelectric (PTE) effect show promising prospects for broadband detection without an external power supply. However, effective strategies are still required to regulate the conversion efficiency of light to heat and electricity. Herein, significantly enhanced photoresponse properties of PbI₂ generated from a PTE mechanism via a high-pressure strategy are reported. PbI₂ exhibits a stable, fast, self-driven, and broadband photoresponse at ≈980 nm. Intriguingly, the synergy of the photoconductivity and PTE mechanism is conducive to enhancing the photoelectric properties, and extending the detection bandwidth to the optical communication waveband (1650 nm) with an external bias. The dramatically enhanced photoresponse characteristics are attributed to narrowing of the band gap and a significantly decreased resistance, which originate from the enhancement of atomic orbital overlap owing to pressure-induced Pb-I bond contraction. These findings open up a new avenue toward designing self-driven and broadband photoelectric devices.

Hot carriers in graphene - fundamentals and applications

Hot charge carriers in graphene exhibit fascinating physical phenomena, whose understanding has improved greatly over the past decade. They have distinctly different physical properties compared to, for example, hot carriers in conventional metals. This is predominantly the result of graphene's linear energy-momentum dispersion, its phonon properties, its all-interface character, and the tunability of its carrier density down to very small values, and from electron- to hole-doping. Since a few years, we have witnessed an increasing interest in technological applications enabled by hot carriers in graphene. Of particular interest are optical and optoelectronic applications, where hot carriers are used to detect (photodetection), convert (nonlinear photonics), or emit (luminescence) light. Graphene-enabled systems in these application areas could find widespread use and have a disruptive impact, for example in the field of data communication, high-frequency electronics, and industrial quality control. The aim of this review is to provide an overview of the most relevant physics and working principles that are relevant for applications exploiting hot carriers in graphene.

Significant improvement in thermoelectric performance of SnSe/SnS via nano-heterostructures

In this work, we study theoretically the electronic and phonon transport properties of heterojunction SnSe/SnS, bilayer SnSe and SnS. The energy filtering effect caused by the nano heterostructure in SnSe/SnS induces an increase in the Seebeck coefficient, causing a large power factor. We calculate the phonon relaxation time and lattice thermal conductivity κL for the three structures; the heterogeneous nanostructure could effectively reduce κL due to the enhanced phonon boundary scattering at interfaces. The average κL notably reduces from around 3.3 (3.2) W m-1 K-1 for bilayer SnSe (SnS) to nearly 2.2 W m-1 K-1 for SnSe/SnS at 300 K. As a result, the average ZT (ZTave in b and c directions) reaches 1.63 with temperature range around 300-800 K, which is improved by 63% (25%) compared with that of bilayer SnSe (SnS). Our theoretical results show that the heterogeneous nanostructure is an innovative approach for improving the Seebeck coefficient and significantly reducing κL, effectively enhancing thermoelectric properties.

Photothermoelectric SnTe Photodetector with Broad Spectral Response and High On/Off Ratio

A broadband photodetector with high performance is highly desirable for the optoelectric and sensing application. Herein, we report a "photo-thermo-electric" (PTE) detector based on an ultrathin SnTe film. The (001)-oriented SnTe films with the wafer size scale are epitaxially grown on the surface of sodium chloride crystals by a scalable sputtering method. Due to the giant PTE effect under laser spot excitation on the asymmetric position between two terminals, a built-in electrical field is produced to drive bulk carriers for a self-powered photodetector, leading to a broad spectral response in the wavelength range from 404 nm to 10.6 μm far beyond the limitation of the energy band gap. Significantly, the photodetector displays a high on/off photoswitching ratio of over 10⁵ with a suppressed dark current, which is 4-5 orders of magnitude higher than that of other reported SnTe-based detectors. Under zero external bias, the device yields the highest detectivity of ∼1.3 × 10¹⁰ cm Hz^1/2 W^-1 with a corresponding responsivity of ∼3.9 mA W^-1 and short rising/falling times of ∼78/84 ms. Furthermore, the photodetector transferred onto the flexible template exhibits excellent mechanical flexibility over 300 bending cycles. These findings offer feasible strategies toward designing and developing low-power-consumption wearable optoelectronics with competitive performance.

Deep tuning of photo-thermoelectricity in topological surface states

Three-dimensional topological insulators have been demonstrated in recent years, which possess intriguing gapless, spin-polarized Dirac states with linear dispersion only on the surface. The spin polarization of the topological surface states is also locked to its momentum, which allows controlling motion of electrons using optical helicity, i.e., circularly polarized light. The electrical and thermal transport can also be significantly tuned by the helicity-control of surface state electrons. Here, we report studies of photo-thermoelectric effect of the topological surface states in Bi₂Te₂Se thin films with large tunability using varied gate voltages and optical helicity. The Seebeck coefficient can be altered by more than five times compared to the case without spin injection. This deep tuning is originated from the optical helicity-induced photocurrent which is shown to be enhanced, reduced, turned off, and even inverted due to the change of the accessed band structures by electrical gating. The helicity-selected topological surface state thus has a large effect on thermoelectric transport, demonstrating great opportunities for realizing helicity control of optoelectronic and thermal devices.

Large and Reconfigurable Infrared Photothermoelectric Effect at Oxide Interfaces

To maximize the photovoltaic efficiency, it is highly desirable to enable the electricity conversion from low energy photons and to extract the excessive energy from hot carriers. Here we report a large photovoltage generation at the LaAlO₃/SrTiO₃ interfaces from infrared photons with energies far below the oxide bandgaps. This effect is a result of the photoexcitation of hot carriers in metasurface electrical contacts and the subsequent thermoelectric charge separations by the interfacial two-dimensional electron gas (2DEG). Reaching a room-temperature responsivity of 4.4 V/W, such light-to-charge conversion can be spatially controlled and reconfigured through the patterning of 2DEG using conducting atomic force microscope. Compatible for broadband applications, our results demonstrate a new path toward efficient and programmable light sensing using oxide-based low-dimensional electron systems.

Phonon-enhanced photothermoelectric effect in SrTiO3 ultra-broadband photodetector

The self-powered and ultra-broadband photodetectors based on photothermoelectric (PTE) effect are promising for diverse applications such as sensing, environmental monitoring, night vision and astronomy. The sensitivity of PTE photodetectors is determined by the Seebeck coefficient and the rising temperature under illumination. Previous PTE photodetectors mostly rely on traditional thermoelectric materials with Seebeck coefficients in the range of 100 μV K⁻¹, and array structures with multiple units are usually employed to enhance the photodetection performance. Herein, we demonstrate a reduced SrTiO₃ (r-STO) based PTE photodetector with sensitivity up to 1.2 V W⁻¹ and broadband spectral response from 325 nm to 10.67 μm. The high performance of r-STO PTE photodetector is attributed to its intrinsic high Seebeck coefficient and phonon-enhanced photoresponse in the long wavelength infrared region. Our results open up a new avenue towards searching for novel PTE materials beyond traditional thermoelectric materials for low-cost and high-performance photodetector at room temperature.

Broadband photodetectors for various applications are in high demand, however, often suffering from non-linearities at high power densities. Here, a reduced strontium titanate based photodetector exhibiting linear response up to 1235 W/cm² is presented not achieved by other broadband photodetectors.

Thermoelectric Performance of Sb2Te3-Based Alloys is Improved by Introducing PN Junctions

Interface engineering has been demonstrated to be an effective strategy for enhancing the thermoelectric (TE) performance of materials. However, a very typical interface in semiconductors, that is, the PN junction (PNJ), is scarcely adopted by the thermoelectrical community because of the coexistence of holes and electrons. Interestingly, our explorative results provide a definitively positive case that appropriate PNJs are able to enhance the TE performance of p-type Sb₂Te₃-based alloys. Specifically, owing to the formation of the charge-depletion layer and built-in electric field, the carrier concentration and transport can be optimized and thus the power factor is improved and the electronic thermal conductivity is decreased. Meanwhile, PNJs provide scattering centers for phonons, leading to a reduced lattice thermal conductivity. Consequently, the p-type (Bi₂Te₃)_0.15-(Sb₂Te₃)_0.85 composites comprising PNJs achieve a ∼131% improvement of the ZT value compared with the pure Sb₂Te₃. The increased ZT demonstrates the feasibility of improving the TE properties by introducing PNJs, which will open a new and effective avenue for designing TE alloys with high performance.

Phase engineering of seamless heterophase homojunctions with co-existing 3R and 2H phases in WS2 monolayers

Self-organized semiconductor-semiconductor heterostructures (3R-2H) that coexist in atomically thin 2D monolayers forming homojunctions are of great importance for next-generation nanoelectronics and optoelectronics applications. Herein, we investigated the defect controlled growth of heterogeneous electronic structure within a single domain of monolayer WS₂ to enable in-plane homojunctions consisting of alternate 2H semiconducting and 3R semiconducting phases of WS₂. X-ray photoelectron, Raman, and photoluminescence spectroscopy along with fluorescence and Kelvin probe force microscopy imaging confirm the formation of homojunctions, enabling a direct correlation between chemical heterogeneity and electronic heterostructure in the atomically thin WS₂ monolayer. Quantitative analysis of phase fractions shows 59% stable 2H phase and 41% metastable 3R phase estimated over WS₂ flakes of different sizes. Time-resolved fluorescence lifetime imaging confirms distinct contrast between 2H and 3R phases with two distinct lifetimes of 3.2 ns and 1.1 ns, respectively. Kelvin probe force microscopy imaging revealed an abrupt change in the contact potential difference with a depletion width of ∼2.5 μm, capturing a difference in work function of ∼40 meV across the homojunction. Further, the thermal stability of coexisting phases and their temperature dependent optical behavior show a distinct difference among 2H and 3R phases. The investigated aspects of the controlled in plane growth of coexisting phases with seamless homojunctions, their properties, and their thermal stability will enable the development of nanoscale devices that are free from issues of lattice mismatch and grain boundaries.

Strong Photothermoelectric Response and Contact Reactivity of the Dirac Semimetal ZrTe5

The family of three-dimensional topological insulators opens new avenues to discover novel photophysics and to develop novel types of photodetectors. ZrTe₅ has been shown to be a Dirac semimetal possessing unique topological, electronic, and optical properties. Here, we present spatially resolved photocurrent measurements on devices made of nanoplatelets of ZrTe₅, demonstrating the photothermoelectric origin of the photoresponse. Because of the high electrical conductivity and good Seebeck coefficient, we obtain noise-equivalent powers as low as 42 pW/Hz^1/2, at room temperature for visible light illumination, at zero bias. We also show that these devices suffer from significant ambient reactivity, such as the formation of a Te-rich surface region driven by Zr oxidation as well as severe reactions with the metal contacts. This reactivity results in significant stresses in the devices, leading to unusual geometries that are useful for gaining insight into the photocurrent mechanisms. Our results indicate that both the large photothermoelectric response and reactivity must be considered when designing or interpreting photocurrent measurements in these systems.

Self-Assembled Heterostructures: Selective Growth of Metallic Nanoparticles on V2 -VI3 Nanoplates

Precise control of the selective growth of heterostructures with specific composition and functionalities is an emerging and extremely challenging topic. Here, the first investigation of the difference in binding energy between a series of metal-semiconductor heterostructures based on layered V₂ -VI₃ nanostructures is investigated by means of density functional theory. All lateral configurations show lower formation energy compared with that of the vertical ones, implying the selective growth of metal nanoparticles. The simulation results are supported by the successful fabrication of self-assembled Ag/Cu-nanoparticle-decorated p-type Sb₂ Te₃ and n-type Bi₂ Te₃ nanoplates at their lateral sites through a solution reaction. The detailed nucleation-growth kinetics are well studied with controllable reaction times and precursor concentrations. Accompanied by the preserved topological structure integrity and electron transfer on the semiconductor host, exceptional properties such as dramatically increased electrical conductivity are observed thanks to the pre-energy-filtering effect before carrier injection. A zigzag thermoelectric generator is built using Cu/Ag-decorated Sb₂ Te₃ and Bi₂ Te₃ as p-n legs to utilize the temperature gradient in the vertical direction. Synthetic approaches using similar chalcogenide nanoplates as building blocks, as well as careful control of the dopant metallic nanoparticles or semiconductors, are believed to be broadly applicable to other heterostructures with novel applications.