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Darwish M, Zhabura Y, Pohl L. Recent Advances of VO 2 in Sensors and Actuators. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:582. [PMID: 38607118 PMCID: PMC11154574 DOI: 10.3390/nano14070582] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/22/2024] [Revised: 03/24/2024] [Accepted: 03/25/2024] [Indexed: 04/13/2024]
Abstract
Vanadium dioxide (VO2) stands out for its versatility in numerous applications, thanks to its unique reversible insulator-to-metal phase transition. This transition can be initiated by various stimuli, leading to significant alterations in the material's characteristics, including its resistivity and optical properties. As the interest in the material is growing year by year, the purpose of this review is to explore the trends and current state of progress on some of the applications proposed for VO2 in the field of sensors and actuators using literature review methods. Some key applications identified are resistive sensors such as strain, temperature, light, gas concentration, and thermal fluid flow sensors for microfluidics and mechanical microactuators. Several critical challenges have been recognized in the field, including the expanded investigation of VO2-based applications across multiple domains, exploring various methods to enhance device performance such as modifying the phase transition temperature, advancing the fabrication techniques for VO2 structures, and developing innovative modelling approaches. Current research in the field shows a variety of different sensors, actuators, and material combinations, leading to different sensor and actuator performance input ranges and output sensitivities.
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Affiliation(s)
- Mahmoud Darwish
- Department of Electron Devices, Faculty of Electrical Engineering and Informatics, Budapest University of Technology and Economics, 1111 Budapest, Hungary
| | - Yana Zhabura
- Department of Electrical Engineering and Automation, School of Electrical Engineering, Aalto University, 02150 Espoo, Finland;
| | - László Pohl
- Department of Electron Devices, Faculty of Electrical Engineering and Informatics, Budapest University of Technology and Economics, 1111 Budapest, Hungary
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2
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Zhou S, Chen P, Xiao C, Ge Y, Gao H. Recent advances in dynamic dual mode systems for daytime radiative cooling and solar heating. RSC Adv 2023; 13:31738-31755. [PMID: 37908645 PMCID: PMC10613950 DOI: 10.1039/d3ra05506j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/13/2023] [Accepted: 10/24/2023] [Indexed: 11/02/2023] Open
Abstract
Thermal management, including heating and cooling, plays an important role in human productive activities and daily life. Nevertheless, in the actual environment, almost all the ambient scenarios come with the challenge that the objects are located in a quite dynamic and variable environment, which includes fluctuations in aspects such as space, time, sunlight, season, and temperature. It is imperative to develop low-energy or even zero-energy thermal-management technologies with renewable and clean energy. In this review, we summarised the latest technological advances and the prospects in this burgeoning field. First, we present the fundamental principles of the daytime passive radiative cooling (PDRC) thermal management device. Next, In the domain of dual-mode systems, they are classified into various types based on the diverse mechanisms of transitioning between cooling and heating states, including electrical responsive, mechanical responsive, temperature responsive, and solution responsive. Furthermore, we conducted an in-depth analysis of the principles and design methodologies associated with these categories, followed by a comparative assessment of their performance in radiative cooling and solar heating applications. Finally, this review presents the challenges and opportunities of dynamic dual mode thermal management, while also identifying future directions.
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Affiliation(s)
- Shiqing Zhou
- College of Environmental Science and Engineering, Tongji University 1239 Siping Road Shanghai 200092 P. R. China
| | - Pengyue Chen
- College of Environmental Science and Engineering, Tongji University 1239 Siping Road Shanghai 200092 P. R. China
| | - Chunhong Xiao
- College of Environmental Science and Engineering, Tongji University 1239 Siping Road Shanghai 200092 P. R. China
| | - Yuqing Ge
- College of Environmental Science and Engineering, Tongji University 1239 Siping Road Shanghai 200092 P. R. China
| | - Hongwen Gao
- College of Environmental Science and Engineering, Tongji University 1239 Siping Road Shanghai 200092 P. R. China
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3
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Birkhölzer YA, Sotthewes K, Gauquelin N, Riekehr L, Jannis D, van der Minne E, Bu Y, Verbeeck J, Zandvliet HJW, Koster G, Rijnders G. High-Strain-Induced Local Modification of the Electronic Properties of VO 2 Thin Films. ACS APPLIED ELECTRONIC MATERIALS 2022; 4:6020-6028. [PMID: 36588623 PMCID: PMC9798830 DOI: 10.1021/acsaelm.2c01176] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/05/2022] [Accepted: 11/07/2022] [Indexed: 06/17/2023]
Abstract
Vanadium dioxide (VO2) is a popular candidate for electronic and optical switching applications due to its well-known semiconductor-metal transition. Its study is notoriously challenging due to the interplay of long- and short-range elastic distortions, as well as the symmetry change and the electronic structure changes. The inherent coupling of lattice and electronic degrees of freedom opens the avenue toward mechanical actuation of single domains. In this work, we show that we can manipulate and monitor the reversible semiconductor-to-metal transition of VO2 while applying a controlled amount of mechanical pressure by a nanosized metallic probe using an atomic force microscope. At a critical pressure, we can reversibly actuate the phase transition with a large modulation of the conductivity. Direct tunneling through the VO2-metal contact is observed as the main charge carrier injection mechanism before and after the phase transition of VO2. The tunneling barrier is formed by a very thin but persistently insulating surface layer of the VO2. The necessary pressure to induce the transition decreases with temperature. In addition, we measured the phase coexistence line in a hitherto unexplored regime. Our study provides valuable information on pressure-induced electronic modifications of the VO2 properties, as well as on nanoscale metal-oxide contacts, which can help in the future design of oxide electronics.
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Affiliation(s)
- Yorick A. Birkhölzer
- MESA+
Institute of Nanotechnology, University
of Twente, P.O. Box 217, 7500AEEnschede, The Netherlands
| | - Kai Sotthewes
- MESA+
Institute of Nanotechnology, University
of Twente, P.O. Box 217, 7500AEEnschede, The Netherlands
| | - Nicolas Gauquelin
- Electron
Microscopy for Materials Science (EMAT), University of Antwerp, Groenenborgerlaan 171, 2020Antwerp, Belgium
| | - Lars Riekehr
- Electron
Microscopy for Materials Science (EMAT), University of Antwerp, Groenenborgerlaan 171, 2020Antwerp, Belgium
| | - Daen Jannis
- Electron
Microscopy for Materials Science (EMAT), University of Antwerp, Groenenborgerlaan 171, 2020Antwerp, Belgium
| | - Emma van der Minne
- MESA+
Institute of Nanotechnology, University
of Twente, P.O. Box 217, 7500AEEnschede, The Netherlands
| | - Yibin Bu
- MESA+
Institute of Nanotechnology, University
of Twente, P.O. Box 217, 7500AEEnschede, The Netherlands
| | - Johan Verbeeck
- Electron
Microscopy for Materials Science (EMAT), University of Antwerp, Groenenborgerlaan 171, 2020Antwerp, Belgium
| | - Harold J. W. Zandvliet
- MESA+
Institute of Nanotechnology, University
of Twente, P.O. Box 217, 7500AEEnschede, The Netherlands
| | - Gertjan Koster
- MESA+
Institute of Nanotechnology, University
of Twente, P.O. Box 217, 7500AEEnschede, The Netherlands
| | - Guus Rijnders
- MESA+
Institute of Nanotechnology, University
of Twente, P.O. Box 217, 7500AEEnschede, The Netherlands
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4
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Self-rolling of vanadium dioxide nanomembranes for enhanced multi-level solar modulation. Nat Commun 2022; 13:7819. [PMID: 36535951 PMCID: PMC9763237 DOI: 10.1038/s41467-022-35513-w] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/30/2022] [Accepted: 12/08/2022] [Indexed: 12/24/2022] Open
Abstract
Thermochromic window develops as a competitive solution for carbon emissions due to comprehensive advantages of its passivity and effective utilization of energy. How to further enhance the solar modulation ([Formula: see text]) of thermochromic windows while ensuring high luminous transmittance ([Formula: see text]) becomes the latest challenge to touch the limit of energy efficiency. Here, we show a smart window combining mechanochromism with thermochromism by self-rolling of vanadium dioxide (VO2) nanomembranes to enhance multi-level solar modulation. The mechanochromism is introduced by the temperature-controlled regulation of curvature of rolled-up smart window, which benefits from effective strain adjustment in VO2 nanomembranes upon the phase transition. Under geometry design and optimization, the rolled-up smart window with high [Formula: see text] and [Formula: see text] is achieved for the modulation of indoor temperature self-adapted to seasons and climate. Furthermore, such rolled-up smart window enables high infrared reflectance after triggered phase transition and acts as a smart lens protective cover for strong radiation. This work supports the feasibility of self-rolling technology in smart windows and lens protection, which promises broad interest and practical applications of self-adapting devices and systems for smart building, intelligent sensors and actuators with the perspective of energy efficiency.
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5
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Biswas S. A DFT Study of the Electronic, Magnetic and Structural Properties of Rutile VO2. PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES INDIA SECTION A-PHYSICAL SCIENCES 2022. [DOI: 10.1007/s40010-021-00731-2] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
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6
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Shi R, Chen Y, Cai X, Lian Q, Zhang Z, Shen N, Amini A, Wang N, Cheng C. Phase management in single-crystalline vanadium dioxide beams. Nat Commun 2021; 12:4214. [PMID: 34244501 PMCID: PMC8270972 DOI: 10.1038/s41467-021-24527-5] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/10/2021] [Accepted: 06/24/2021] [Indexed: 11/10/2022] Open
Abstract
A systematic study of various metal-insulator transition (MIT) associated phases of VO2, including metallic R phase and insulating phases (T, M1, M2), is required to uncover the physics of MIT and trigger their promising applications. Here, through an oxide inhibitor-assisted stoichiometry engineering, we show that all the insulating phases can be selectively stabilized in single-crystalline VO2 beams at room temperature. The stoichiometry engineering strategy also provides precise spatial control of the phase configurations in as-grown VO2 beams at the submicron-scale, introducing a fresh concept of phase transition route devices. For instance, the combination of different phase transition routes at the two sides of VO2 beams gives birth to a family of single-crystalline VO2 actuators with highly improved performance and functional diversity. This work provides a substantial understanding of the stoichiometry-temperature phase diagram and a stoichiometry engineering strategy for the effective phase management of VO2. Control of the phases associated with the metal-insulator transition in VO2 underpins its applications as a phase change material. Here, the authors report phase management by means of oxide inhibitor-assisted growth and present high-performance VO2 actuators based on asymmetric phase transition routes.
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Affiliation(s)
- Run Shi
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, People's Republic of China.,Department of Physics and Center for Quantum Materials, Hong Kong University of Science and Technology, Hong Kong, People's Republic of China
| | - Yong Chen
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, People's Republic of China.,Department of Physics and Center for Quantum Materials, Hong Kong University of Science and Technology, Hong Kong, People's Republic of China
| | - Xiangbin Cai
- Department of Physics and Center for Quantum Materials, Hong Kong University of Science and Technology, Hong Kong, People's Republic of China
| | - Qing Lian
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, People's Republic of China
| | - Zhuoqiong Zhang
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, People's Republic of China
| | - Nan Shen
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, People's Republic of China
| | - Abbas Amini
- Center for Infrastructure Engineering, Western Sydney University, Kingswood, NSW, Australia
| | - Ning Wang
- Department of Physics and Center for Quantum Materials, Hong Kong University of Science and Technology, Hong Kong, People's Republic of China
| | - Chun Cheng
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, People's Republic of China.
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7
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Garg AB, Errandonea D, Rodríguez-Hernández P, Muñoz A. High-pressure monoclinic-monoclinic transition in fergusonite-type HoNbO 4. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:195401. [PMID: 33561835 DOI: 10.1088/1361-648x/abe478] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/20/2020] [Accepted: 02/09/2021] [Indexed: 06/12/2023]
Abstract
In this paper we perform a high-pressure (HP) study of fergusonite-type HoNbO4. Powder x-ray diffraction experiments andab initiodensity-functional theory (DFT) simulations provide evidence of a phase transition at 18.9(1.1) GPa from the monoclinic fergusonite-type structure (space group I2/a) to another monoclinic polymorph described by space group P21/c. The phase transition is reversible and the HP structural behavior is different than the one previously observed in related niobates. The HP phase remains stable up to 29 GPa. The observed transition involves a change in the Nb coordination number from 4 to 6, and it is driven by mechanical instabilities. We have determined the pressure dependence of unit-cell parameters of both phases and calculated their room-temperature equation of state. For the fergusonite-phase we have also obtained the isothermal compressibility tensor. In addition to the HP studies, we report ambient-pressure Raman and infrared (IR) spectroscopy measurements. We have been able to identify all the active modes of fergusonite-type HoNbO4, which have been assigned based upon DFT calculations. These simulations also provide the elastic constants of the different structures and the pressure dependence of the Raman and IR modes of the two phases of HoNbO4. According toab initiocalculations, the reported phase transition is related to a mechanical instability and a phonon softening.
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Affiliation(s)
- A B Garg
- High Pressure and Synchrotron Radiation Physics Division, Bhabha Atomic Research Centre, Mumbai 400085, India
- Homi Bhabha National Institute, Anushaktinagar, Mumbai 400094, India
| | - D Errandonea
- Departamento de Física Aplicada-ICMUV, Universidad de Valencia, Dr. Moliner 50, Burjassot, 46100 Valencia, Spain
| | - P Rodríguez-Hernández
- Departamento de Física, Instituto de Materiales y Nanotecnología, Universidad de La Laguna, La Laguna 38205, Tenerife, Spain
| | - A Muñoz
- Departamento de Física, Instituto de Materiales y Nanotecnología, Universidad de La Laguna, La Laguna 38205, Tenerife, Spain
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8
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Ke Y, Wang T, Li N, Wang S, Long Y. On-off near-infrared absorbance based on thermal-responsive plasmonic coupling in vanadium dioxide arrays for thermochromic windows. OPTICS EXPRESS 2021; 29:9324-9331. [PMID: 33820363 DOI: 10.1364/oe.419872] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/14/2021] [Accepted: 03/03/2021] [Indexed: 06/12/2023]
Abstract
Vanadium dioxide (VO2) emerges as an attractive plasmonic material due to its unique reversible thermal-responsive phase transition and the promising application in energy-saving smart windows. Here, by optimizing the geometry of VO2 nano-cylinder arrays, we demonstrate a significant performance enhancement for energy-efficient thermochromic windows. Such a performance enhancement relies on the on-off behavior of plasmonic resonance in the extremely high packing density of VO2 nano-cylinder arrays. Different from the typical plasmonic material, silver, VO2 nano-cylinders are characterized to have strong absorbance in near-infrared spectrum with significantly weaker plasmonic coupling to their neighbors, making them suitable to be arranged with a high packing density. The VO2 nano-cylinder arrays exhibit a 160% luminous transmittance increment, comparing to a flat film with the same solar modulation of ∼10%. The work provides a better understanding of the plasmonic behavior on phase-change VO2 and an efficient method to enhance smart window performance.
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9
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Zhang Y, Xiong W, Chen W, Zheng Y. Recent Progress on Vanadium Dioxide Nanostructures and Devices: Fabrication, Properties, Applications and Perspectives. NANOMATERIALS 2021; 11:nano11020338. [PMID: 33525597 PMCID: PMC7911400 DOI: 10.3390/nano11020338] [Citation(s) in RCA: 22] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/23/2020] [Revised: 01/19/2021] [Accepted: 01/20/2021] [Indexed: 01/24/2023]
Abstract
Vanadium dioxide (VO2) is a typical metal-insulator transition (MIT) material, which changes from room-temperature monoclinic insulating phase to high-temperature rutile metallic phase. The phase transition of VO2 is accompanied by sudden changes in conductance and optical transmittance. Due to the excellent phase transition characteristics of VO2, it has been widely studied in the applications of electric and optical devices, smart windows, sensors, actuators, etc. In this review, we provide a summary about several phases of VO2 and their corresponding structural features, the typical fabrication methods of VO2 nanostructures (e.g., thin film and low-dimensional structures (LDSs)) and the properties and related applications of VO2. In addition, the challenges and opportunities for VO2 in future studies and applications are also discussed.
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Affiliation(s)
- Yanqing Zhang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China; (Y.Z.); (W.C.)
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Weiming Xiong
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China; (Y.Z.); (W.C.)
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Correspondence: (W.X.); (Y.Z.)
| | - Weijin Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China; (Y.Z.); (W.C.)
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- School of Materials, Sun Yat-sen University, Guangzhou 510275, China
| | - Yue Zheng
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China; (Y.Z.); (W.C.)
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Correspondence: (W.X.); (Y.Z.)
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10
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Acosta D, Magaña C, Hernández F, Chavez-Esquivel G, Cortes-Cordova DE, Huerta L, Valdés-Martínez OU. Temperature effects on VO2 thin films deposited by RF sputtering for the degradation by photocatalysis of methylene blue and naproxen. INTERNATIONAL JOURNAL OF CHEMICAL REACTOR ENGINEERING 2020. [DOI: 10.1515/ijcre-2019-0214] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/15/2022]
Abstract
AbstractThe temperature effect on VO2 thin films synthesized by RF sputtering on their morphological, optical, electrical properties and their activity in the photocatalytic degradation of methylene blue and naproxen was studied. Characterization results presented microcrystallinity for VO2 films treated at 50 and 100 °C. Nevertheless, the untreated films and films treated at 200 °C revealed characteristic peaks of monoclinic and tetragonal phases. SEM micrographs with elemental mapping of VO2 films showed granular morphology and a good oxygen dispersion along the film surface, possibly due to a restructuring on the film occasioned by particle coalescence and vanadium oxide island conformation. The electronic transmittance spectra showed the d–d transition characteristic for the square-pyramidal stereochemistry of vanadium (IV) ion, where the optical band interval was high for films treated at 50 °C. Raman spectroscopy results presented an increment in the V = O/V–O ratio as a function of temperature, probably related to superficial vanadium species formation. X-ray spectroscopy results showed the Onon-lattice/Olattice ratio values higher for films treated at 50 °C than the other films, related to an oxide character. The V 2p fit results presented V4+, V5+ regions and satellites for VO2 films thermal treated at 50 °C. The electrical resistivity on the VO2 films decreased as a function of temperature. Finally, the VO2 films thermal treated at 50 °C had higher photocatalytic activity in the degradation of methylene blue and naproxen compared to the other VO2 films, possibly associated with high electron mobility between the surface and the bulk, where the oxygen vacancies act as recombination sites for the e−/h+ pairs during photocatalytic degradation.
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Affiliation(s)
- Dwight Acosta
- Instituto de Física, Universidad Nacional Autónoma de México, Ciudad Universitaria, Circuito de la Investigación Científica, Coyoacán, Mexico City, 04510, Mexico
| | - Carlos Magaña
- Instituto de Física, Universidad Nacional Autónoma de México, Ciudad Universitaria, Circuito de la Investigación Científica, Coyoacán, Mexico City, 04510, Mexico
| | - Francisco Hernández
- Instituto de Física, Universidad Nacional Autónoma de México, Ciudad Universitaria, Circuito de la Investigación Científica, Coyoacán, Mexico City, 04510, Mexico
| | - Gerardo Chavez-Esquivel
- Instituto de Física, Universidad Nacional Autónoma de México, Ciudad Universitaria, Circuito de la Investigación Científica, Coyoacán, Mexico City, 04510, Mexico
- Departamento de Ciencias Básicas, División de Ciencias Básicas e Ingeniería, Universidad Autónoma Metropolitana Azcapotzalco, Av. San Pablo 180, Col. Reynosa Tamaulipas, Azcapotzalco, Mexico City, 02200, Mexico
| | - Daniel Eduardo Cortes-Cordova
- Departamento de Ciencias Básicas, División de Ciencias Básicas e Ingeniería, Universidad Autónoma Metropolitana Azcapotzalco, Av. San Pablo 180, Col. Reynosa Tamaulipas, Azcapotzalco, Mexico City, 02200, Mexico
| | - Lázaro Huerta
- Instituto de Materiales, Universidad Nacional Autónoma de México, Circuito Exterior S/N Circuito de la, Investigación Científica, Cuidad Universitaria, Coyoacán, Mexico City, 04510, Mexico
| | - Omar Uriel Valdés-Martínez
- Departamento de Ingeniería de Procesos e Hidráulica, Universidad Autónoma Metropolitana-Iztapalapa, Av. San Rafael Atlixco No. 86, Col. Leyes de Reforma 1a Secc., Iztapalapa, Mexico City, 09310, Mexico
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11
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A newly designed paraffin@VO2 phase change material with the combination of high latent heat and large thermal conductivity. J Colloid Interface Sci 2020; 559:226-235. [DOI: 10.1016/j.jcis.2019.10.033] [Citation(s) in RCA: 29] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/26/2019] [Revised: 10/08/2019] [Accepted: 10/10/2019] [Indexed: 11/23/2022]
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12
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Giant nonvolatile resistive switching in a Mott oxide and ferroelectric hybrid. Proc Natl Acad Sci U S A 2019; 116:8798-8802. [PMID: 30975746 DOI: 10.1073/pnas.1822138116] [Citation(s) in RCA: 29] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022] Open
Abstract
Controlling the electronic properties of oxides that feature a metal-insulator transition (MIT) is a key requirement for developing a new class of electronics often referred to as "Mottronics." A simple, controllable method to switch the MIT properties in real time is needed for practical applications. Here we report a giant, nonvolatile resistive switching (ΔR/R > 1,000%) and strong modulation of the MIT temperature (ΔTc > 30 K) in a voltage-actuated V2O3/PMN-PT [Pb(Mg,Nb)O3-PbTiO3] heterostructure. This resistive switching is an order of magnitude larger than ever encountered in any other similar systems. The control of the V2O3 electronic properties is achieved using the transfer of switchable ferroelastic strain from the PMN-PT substrate into the epitaxially grown V2O3 film. Strain can reversibly promote/hinder the structural phase transition in the V2O3, thus advancing/suppressing the associated MIT. The giant resistive switching and strong Tc modulation could enable practical implementations of voltage-controlled Mott devices and provide a platform for exploring fundamental electronic properties of V2O3.
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Kim J, Baczewski AT, Beaudet TD, Benali A, Bennett MC, Berrill MA, Blunt NS, Borda EJL, Casula M, Ceperley DM, Chiesa S, Clark BK, Clay RC, Delaney KT, Dewing M, Esler KP, Hao H, Heinonen O, Kent PRC, Krogel JT, Kylänpää I, Li YW, Lopez MG, Luo Y, Malone FD, Martin RM, Mathuriya A, McMinis J, Melton CA, Mitas L, Morales MA, Neuscamman E, Parker WD, Pineda Flores SD, Romero NA, Rubenstein BM, Shea JAR, Shin H, Shulenburger L, Tillack AF, Townsend JP, Tubman NM, Van Der Goetz B, Vincent JE, Yang DC, Yang Y, Zhang S, Zhao L. QMCPACK: an open source ab initio quantum Monte Carlo package for the electronic structure of atoms, molecules and solids. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2018; 30:195901. [PMID: 29582782 DOI: 10.1088/1361-648x/aab9c3] [Citation(s) in RCA: 74] [Impact Index Per Article: 12.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
QMCPACK is an open source quantum Monte Carlo package for ab initio electronic structure calculations. It supports calculations of metallic and insulating solids, molecules, atoms, and some model Hamiltonians. Implemented real space quantum Monte Carlo algorithms include variational, diffusion, and reptation Monte Carlo. QMCPACK uses Slater-Jastrow type trial wavefunctions in conjunction with a sophisticated optimizer capable of optimizing tens of thousands of parameters. The orbital space auxiliary-field quantum Monte Carlo method is also implemented, enabling cross validation between different highly accurate methods. The code is specifically optimized for calculations with large numbers of electrons on the latest high performance computing architectures, including multicore central processing unit and graphical processing unit systems. We detail the program's capabilities, outline its structure, and give examples of its use in current research calculations. The package is available at http://qmcpack.org.
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Affiliation(s)
- Jeongnim Kim
- Intel Corporation, Hillsboro, OR 987124, United States of America
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14
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Tian Z, Xu B, Hsu B, Stan L, Yang Z, Mei Y. Reconfigurable Vanadium Dioxide Nanomembranes and Microtubes with Controllable Phase Transition Temperatures. NANO LETTERS 2018; 18:3017-3023. [PMID: 29633849 DOI: 10.1021/acs.nanolett.8b00483] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Two additional structural forms, free-standing nanomembranes and microtubes, are reported and added to the vanadium dioxide (VO2) material family. Free-standing VO2 nanomembranes were fabricated by precisely thinning as-grown VO2 thin films and etching away the sacrificial layer underneath. VO2 microtubes with a range of controllable diameters were rolled-up from the VO2 nanomembranes. When a VO2 nanomembrane is rolled-up into a microtubular structure, a significant compressive strain is generated and accommodated therein, which decreases the phase transition temperature of the VO2 material. The magnitude of the compressive strain is determined by the curvature of the VO2 microtube, which can be rationally and accurately designed by controlling the tube diameter during the rolling-up fabrication process. The VO2 microtube rolling-up process presents a novel way to controllably tune the phase transition temperature of VO2 materials over a wide range toward practical applications. Furthermore, the rolling-up process is reversible. A VO2 microtube can be transformed back into a nanomembrane by introducing an external strain. Because of its tunable phase transition temperature and reversible shape transformation, the VO2 nanomembrane-microtube structure is promising for device applications. As an example application, a tubular microactuator device with low driving energy but large displacement is demonstrated at various triggering temperatures.
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Affiliation(s)
- Ziao Tian
- Department of Materials Science, State Key Laboratory of ASIC and Systems , Fudan University , 200433 Shanghai , PR China
| | - Borui Xu
- Department of Materials Science, State Key Laboratory of ASIC and Systems , Fudan University , 200433 Shanghai , PR China
| | - Bo Hsu
- Department of Electrical and Computer Engineering , University of Illinois at Chicago , Chicago , Illinois 60607 , United States
| | - Liliana Stan
- Center for Nanoscale Materials , Argonne National Laboratory , Lemont , Illinois 60439 , United States
| | - Zheng Yang
- Department of Electrical and Computer Engineering , University of Illinois at Chicago , Chicago , Illinois 60607 , United States
| | - YongFeng Mei
- Department of Materials Science, State Key Laboratory of ASIC and Systems , Fudan University , 200433 Shanghai , PR China
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15
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Xie SY, Wang L, Liu F, Li XB, Bai L, Prakapenka VB, Cai Z, Mao HK, Zhang S, Liu H. Correlated High-Pressure Phase Sequence of VO 2 under Strong Compression. J Phys Chem Lett 2018; 9:2388-2393. [PMID: 29669204 DOI: 10.1021/acs.jpclett.8b00771] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Understanding how the structures of a crystal behave under compression is a fundamental issue both for condensed matter physics and for geoscience. Traditional description of a crystal as the stacking of a unit cell with special symmetry has gained much success on the analysis of physical properties. Unfortunately, it is hard to reveal the relationship between the compressed phases. Taking the family of metal dioxides (MO2) as an example, the structural evolution, subject to fixed chemical formula and highly confined space, often appears as a set of random and uncorrelated events. Here we provide an alternative way to treat the crystal as the stacking of the coordination polyhedron and then discover a unified structure transition pattern, in our case VO2. X-ray diffraction (XRD) experiments and first-principles calculations show that the coordination increase happens only at one apex of the V-centered octahedron in an orderly fashion, leaving the base plane and the other apex topologically intact. The polyhedron evolves toward increasing their sharing, indicating a general rule for the chemical bonds of MO2 to give away the ionicity in exchange for covalency under pressure.
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Affiliation(s)
- Sheng-Yi Xie
- Center for High Pressure Science and Technology Advanced Research , Changchun and Beijing 130012 , China
- School of Physics and Electronics , Hunan University , Changsha 410082 , China
| | - Luhong Wang
- Harbin Institute of Technology , Harbin 150080 , China
| | - Fuyang Liu
- Center for High Pressure Science and Technology Advanced Research , Changchun and Beijing 130012 , China
| | - Xian-Bin Li
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering , Jilin University , Changchun 130012 , China
| | - Ligang Bai
- Institute of High Energy Physics , Chinese Academy of Sciences , Beijing 100049 , China
| | - Vitali B Prakapenka
- Center for Advanced Radiation Sources , University of Chicago , Chicago , Illinois 60637 , United States
| | - Zhonghou Cai
- Advanced Photon Source , Argonne National Laboratory , Argonne , Illinois 60439 , United States
| | - Ho-Kwang Mao
- Center for High Pressure Science and Technology Advanced Research , Changchun and Beijing 130012 , China
- Geophysical Laboratory , Carnegie Institution for Science , Washington, D.C. 20015 , United States
| | - Shengbai Zhang
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering , Jilin University , Changchun 130012 , China
- Department of Physics, Applied Physics, and Astronomy , Rensselaer Polytechnic Institute , Troy , New York 12180 , United States
- Beijing Computational Science Research Center , Beijing 100094 , China
| | - Haozhe Liu
- Center for High Pressure Science and Technology Advanced Research , Changchun and Beijing 130012 , China
- Harbin Institute of Technology , Harbin 150080 , China
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16
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Kulish VV, Koch D, Manzhos S. Ab initio study of Li, Mg and Al insertion into rutile VO 2: fast diffusion and enhanced voltages for multivalent batteries. Phys Chem Chem Phys 2018; 19:22538-22545. [PMID: 28809972 DOI: 10.1039/c7cp04360k] [Citation(s) in RCA: 27] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/14/2022]
Abstract
Vanadium oxides are among the most promising materials that can be used as electrodes in rechargeable metal-ion batteries. In this work, we systematically investigate thermodynamic, electronic, and kinetic properties associated with the insertion of Li, Mg and Al atoms into rutile VO2. Using first-principles calculations, we systematically study the structural evolution and voltage curves of LixVO2, MgxVO2 and AlxVO2 (0 < x < 1) compounds. The calculated lithium intercalation voltage starts at 3.50 V for single-atom insertion and decreases to 2.23 V for full lithiation, to the LiVO2 compound, which agrees well with the experimental results. The Mg insertion features a plateau about 1.6 V up to Mg0.5VO2 and then another plateau-like region at around 0.5 V up to Mg1VO2. The predicted voltage curve for Al insertion starts at 1.98 V, followed by two plateaus at 1.48 V and 1.17 V. The diffusion barrier of Li, Mg and Al in the tunnel structure of VO2 is 0.06, 0.33 and 0.50 eV, respectively. The demonstrated excellent Li, Mg and Al mobility, high structural stability and high specific capacity suggest promising potential of rutile VO2 electrodes especially for multivalent batteries.
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Affiliation(s)
- Vadym V Kulish
- Department of Mechanical Engineering, Faculty of Engineering, National University of Singapore, Block EA #07-08, 9 Engineering Drive 1, Singapore 117576.
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