Direct Observation of the Band Gap Transition in Atomically Thin ReS2

In-plane anisotropic two-dimensional materials for twistronics

In-plane anisotropic two-dimensional (2D) materials exhibit in-plane orientation-dependent properties. The anisotropic unit cell causes these materials to show lower symmetry but more diverse physical properties than in-plane isotropic 2D materials. In addition, the artificial stacking of in-plane anisotropic 2D materials can generate new phenomena that cannot be achieved in in-plane isotropic 2D materials. In this perspective we provide an overview of representative in-plane anisotropic 2D materials and their properties, such as black phosphorus, group IV monochalcogenides, group VI transition metal dichalcogenides with 1T' and Tdphases, and rhenium dichalcogenides. In addition, we discuss recent theoretical and experimental investigations of twistronics using in-plane anisotropic 2D materials. Both in-plane anisotropic 2D materials and their twistronics hold considerable potential for advancing the field of 2D materials, particularly in the context of orientation-dependent optoelectronic devices.

Recent Strategies for the Synthesis of Phase-Pure Ultrathin 1T/1T' Transition Metal Dichalcogenide Nanosheets

The past few decades have witnessed a notable increase in transition metal dichalcogenide (TMD) related research not only because of the large family of TMD candidates but also because of the various polytypes that arise from the monolayer configuration and layer stacking order. The peculiar physicochemical properties of TMD nanosheets enable an enormous range of applications from fundamental science to industrial technologies based on the preparation of high-quality TMDs. For polymorphic TMDs, the 1T/1T' phase is particularly intriguing because of the enriched density of states, and thus facilitates fruitful chemistry. Herein, we comprehensively discuss the most recent strategies for direct synthesis of phase-pure 1T/1T' TMD nanosheets such as mechanical exfoliation, chemical vapor deposition, wet chemical synthesis, atomic layer deposition, and more. We also review frequently adopted methods for phase engineering in TMD nanosheets ranging from chemical doping and alloying, to charge injection, and irradiation with optical or charged particle beams. Prior to the synthesis methods, we discuss the configuration of TMDs as well as the characterization tools mostly used in experiments. Finally, we discuss the current challenges and opportunities as well as emphasize the promising fields for the future development.

Study on interface engineering and chemical bonding of the ReS2@ZnO heterointerface for efficient charge transfer and nonlinear optical conversion efficiency

Rhenium sulfide (ReS2) has emerged as a promising two-dimensional material, demonstrating broad-spectrum visible absorption properties that make it highly relevant for diverse optoelectronic applications. Manipulating and optimizing the pathway of photogenerated carriers play a pivotal role in enhancing the efficiency of charge separation and transfer in novel semiconductor composites. This study focuses on the strategic construction of a semiconductor heterostructure by synthesizing ZnO on vacancy-containing ReS2 (VRe-ReS2) through chemical bonding processes. The ingeniously engineered built-in electric field within the heterostructure effectively suppresses the recombination of photogenerated electron-hole pairs. A direct and well-established interfacial connection between VRe-ReS2 and ZnO is achieved through a robust Zn-S bond. This distinctive bond configuration leads to enhanced nonlinear optical conversion efficiency, attributed to shortened carrier migration distances and accelerated charge transfer rates. Furthermore, theoretical calculations unveil the superior chemical interactions between Re vacancies and sulfide moieties, facilitating the formation of Zn-S bonds. The photoluminescence (PL) intensity is increased by the formation of VRe-ReS2 and ZnO heterostructure and the PL quantum yield of VRe-ReS2 is improved. The intricate impact of the Zn-S bond on the nonlinear absorption behavior of the VRe-ReS2@ZnO heterostructure is systematically investigated using femtosecond Z-scan techniques. The charge transfer from ZnO to ReS2 defect levels induces a transition from saturable absorption to reverse saturable absorption in the VRe-ReS2@ZnO heterostructure. Transient absorption measurements further confirm the presence of the Zn-S bond between the interfaces, as evidenced by the prolonged relaxation time (τ3) in the VRe-ReS2@ZnO heterostructure. This study offers valuable insights into the rational construction of heterojunctions through tailored interfacial bonding and surface/interface charge transfer pathways. These endeavors facilitate the modulation of electron transfer dynamics, ultimately yielding superior nonlinear optical conversion efficiency and effective charge regulation in optoelectronic functional materials.

Orbital perspective on high-harmonic generation from solids

High-harmonic generation in solids allows probing and controlling electron dynamics in crystals on few femtosecond timescales, paving the way to lightwave electronics. In the spatial domain, recent advances in the real-space interpretation of high-harmonic emission in solids allows imaging the field-free, static, potential of the valence electrons with picometer resolution. The combination of such extreme spatial and temporal resolutions to measure and control strong-field dynamics in solids at the atomic scale is poised to unlock a new frontier of lightwave electronics. Here, we report a strong intensity-dependent anisotropy in the high-harmonic generation from ReS2 that we attribute to angle-dependent interference of currents from the different atoms in the unit cell. Furthermore, we demonstrate how the laser parameters control the relative contribution of these atoms to the high-harmonic emission. Our findings provide an unprecedented atomic perspective on strong-field dynamics in crystals, revealing key factors to consider in the route towards developing efficient harmonic emitters.

Photocatalysis with atomically thin sheets

Atomically thin sheets (e.g., graphene and monolayer molybdenum disulfide) are ideal optical and reaction platforms. They provide opportunities for deciphering some important and often elusive photocatalytic phenomena related to electronic band structures and photo-charges. In parallel, in such thin sheets, fine tuning of photocatalytic properties can be achieved. These include atomic-level regulation of electronic band structures and atomic-level steering of charge separation and transfer. Herein, we review the physics and chemistry of electronic band structures and photo-charges, as well as their state-of-the-art characterization techniques, before delving into their atomic-level deciphering and mastery on the platform of atomically thin sheets.

Stacking-Order-Dependent Excitonic Properties Reveal Interlayer Interactions in Bulk ReS2

Rhenium disulfide, a member of the transition metal dichalcogenide family of semiconducting materials, is unique among 2D van der Waals materials due to its anisotropy and, albeit weak, interlayer interactions, confining excitons within single atomic layers and leading to monolayer-like excitonic properties even in bulk crystals. While recent work has established the existence of two stacking modes in bulk, AA and AB, the influence of the different interlayer coupling on the excitonic properties has been poorly explored. Here, we use polarization-dependent optical measurements to elucidate the nature of excitons in AA and AB-stacked rhenium disulfide to obtain insight into the effect of interlayer interactions. We combine polarization-dependent Raman with low-temperature photoluminescence and reflection spectroscopy to show that, while the similar polarization dependence of both stacking orders indicates similar excitonic alignments within the crystal planes, differences in peak width, position, and degree of anisotropy reveal a different degree of interlayer coupling. DFT calculations confirm the very similar band structure of the two stacking orders while revealing a change of the spin-split states at the top of the valence band to possibly underlie their different exciton binding energies. These results suggest that the excitonic properties are largely determined by in-plane interactions, however, strongly modified by the interlayer coupling. These modifications are stronger than those in other 2D semiconductors, making ReS2 an excellent platform for investigating stacking as a tuning parameter for 2D materials. Furthermore, the optical anisotropy makes this material an interesting candidate for polarization-sensitive applications such as photodetectors and polarimetry.

Probing the Electronic and Opto-Electronic Properties of Multilayer MoS2 Field-Effect Transistors at Low Temperatures

Transition metal dichalcogenides (TMDs)-based field-effect transistors (FETs) are being investigated vigorously for their promising applications in optoelectronics. Despite the high optical response reported in the literature, most of them are studied at room temperature. To extend the application of these materials in a photodetector, particularly at a low temperature, detailed understanding of the photo response behavior of these materials at low temperatures is crucial. Here we present a systematic investigation of temperature-dependent electronic and optoelectronic properties of few-layers MoS2 FETs, synthesized using the mechanical exfoliation of bulk MoS2 crystal, on the Si/SiO2 substrate. Our MoS2 FET show a room-temperature field-effect mobility μFE ~40 cm2·V-1·s-1, which increases with decreasing temperature, stabilizing at 80 cm2·V-1·s-1 below 100 K. The temperature-dependent (50 K < T < 300 K) photoconductivity measurements were investigated using a continuous laser source λ = 658 nm (E = 1.88 eV) over a broad range of effective illuminating laser intensity, Peff (0.02 μW < Peff < 0.6 μW). Photoconductivity measurements indicate a fractional power dependence of the steady-state photocurrent. The room-temperature photoresponsivity (R) obtained in these samples was found to be ~2 AW-1, and it increases as a function of decreasing temperature, reaching a maximum at T = 75 K. The optoelectronic properties of MoS2 at a low temperature give an insight into photocurrent generation mechanisms, which will help in altering/improving the performance of TMD-based devices for various applications.

Dominating Interlayer Resonant Energy Transfer in Type-II 2D Heterostructure

Type-II heterostructures (HSs) are essential components of modern electronic and optoelectronic devices. Earlier studies have found that in type-II transition metal dichalcogenide (TMD) HSs, the dominating carrier relaxation pathway is the interlayer charge transfer (CT) mechanism. Here, this report shows that, in a type-II HS formed between monolayers of MoSe₂ and ReS₂, nonradiative energy transfer (ET) from higher to lower work function material (ReS₂ to MoSe₂) dominates over the traditional CT process with and without a charge-blocking interlayer. Without a charge-blocking interlayer, the HS area shows 3.6 times MoSe₂ photoluminescence (PL) enhancement as compared to the MoSe₂ area alone. In a completely encapsulated sample, the HS PL emission further increases by a factor of 6.4. After completely blocking the CT process, more than 1 order of magnitude higher MoSe₂ PL emission was achieved from the HS area. This work reveals that the nature of this ET is truly a resonant effect by showing that in a similar type-II HS formed by ReS₂ and WSe₂, CT dominates over ET, resulting in a severely quenched WSe₂ PL. This study not only provides significant insight into the competing interlayer processes but also shows an innovative way to increase the PL emission intensity of the desired TMD material using the ET process by carefully choosing the right material combination for HS.

Multiple charge density wave phases of monolayer VSe2manifested by graphene substrates

A combined study of scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES) is conducted to understand the multiple charge density wave (CDW) phases of monolayer (ML) VSe₂films manifested by graphene substrates. Submonolayer (∼0.8 ML) VSe₂films are prepared on two different substrates of single-layer graphene (SLG) and bi-layer graphene (BLG) on a 6H-SiC(0001). We find that ML VSe₂films are less coupled to the SLG substrate compared to that of ML VSe₂/BLG. Then, ML VSe₂grown on SLG and BLG substrates reveals a very different topography in STM. While ML VSe₂/BLG shows one unidirectional modulation of √3 × 2 and √3 × √7 CDW in topography, ML VSe₂/SLG presents a clear modulation of 4 × 1 CDW interfering with √3 × 2 and √3 × √7 CDW which has not been previously observed. We explicitly show that the reciprocal vector of 4 × 1 CDW fits perfectly into the long parallel sections of cigar-shaped Fermi surfaces near the M point in ML VSe₂, satisfying Fermi surface nesting. Since bulk VSe₂is also well-known for the 4 × 4 × 3 CDW formed by Fermi surface nesting, the 4 × 1 CDW in ML VSe₂/SLG is attributed to the planar projection of 4 × 4 × 3 CDW in bulk. Our result clarifies the nature of the 4 × 1 CDW in ML VSe₂system and is a good example demonstrating the essential role of substrates in two-dimensional transition metal dichalcogenides.

Angle, Spin, and Depth Resolved Photoelectron Spectroscopy on Quantum Materials

The role of X-ray based electron spectroscopies in determining chemical, electronic, and magnetic properties of solids has been well-known for several decades. A powerful approach is angle-resolved photoelectron spectroscopy, whereby the kinetic energy and angle of photoelectrons emitted from a sample surface are measured. This provides a direct measurement of the electronic band structure of crystalline solids. Moreover, it yields powerful insights into the electronic interactions at play within a material and into the control of spin, charge, and orbital degrees of freedom, central pillars of future solid state science. With strong recent focus on research of lower-dimensional materials and modified electronic behavior at surfaces and interfaces, angle-resolved photoelectron spectroscopy has become a core technique in the study of quantum materials. In this review, we provide an introduction to the technique. Through examples from several topical materials systems, including topological insulators, transition metal dichalcogenides, and transition metal oxides, we highlight the types of information which can be obtained. We show how the combination of angle, spin, time, and depth-resolved experiments are able to reveal "hidden" spectral features, connected to semiconducting, metallic and magnetic properties of solids, as well as underlining the importance of dimensional effects in quantum materials.

Polarized Light-Emitting Diodes Based on Anisotropic Excitons in Few-Layer ReS2

An on-chip polarized light source is desirable in signal processing, optical communication, and display applications. Layered semiconductors with reduced in-plane symmetry have inherent anisotropic excitons that are attractive candidates as polarized dipole emitters. Herein, the demonstration of polarized light-emitting diode based on anisotropic excitons in few-layer ReS₂ , a 2D semiconductor with excitonic transition energy of 1.5-1.6 eV, is reported. The light-emitting device is based on minority carrier (hole) injection into n-type ReS₂ through a hexagonal boron nitride (hBN) tunnel barrier in a metal-insulator-semiconductor (MIS) van der Waals heterostack. Two distinct emission peaks from excitons are observed at near-infrared wavelength regime from few-layer ReS₂ . The emissions exhibit a degree of polarization of 80% reflecting the nearly 1D nature of excitons in ReS₂ .

Visualizing Orbital Content of Electronic Bands in Anisotropic 2D Semiconducting ReSe2

Many properties of layered materials change as they are thinned from their bulk forms down to single layers, with examples including indirect-to-direct band gap transition in 2H semiconducting transition metal dichalcogenides as well as thickness-dependent changes in the valence band structure in post-transition-metal monochalcogenides and black phosphorus. Here, we use angle-resolved photoemission spectroscopy to study the electronic band structure of monolayer ReSe₂, a semiconductor with a distorted 1T structure and in-plane anisotropy. By changing the polarization of incoming photons, we demonstrate that for ReSe₂, in contrast to the 2H materials, the out-of-plane transition metal d_z² and chalcogen p_z orbitals do not contribute significantly to the top of the valence band, which explains the reported weak changes in the electronic structure of this compound as a function of layer number. We estimate a band gap of 1.7 eV in pristine ReSe₂ using scanning tunneling spectroscopy and explore the implications on the gap following surface doping with potassium. A lower bound of 1.4 eV is estimated for the gap in the fully doped case, suggesting that doping-dependent many-body effects significantly affect the electronic properties of ReSe₂. Our results, supported by density functional theory calculations, provide insight into the mechanisms behind polarization-dependent optical properties of rhenium dichalcogenides and highlight their place among two-dimensional crystals.

MoS2-ReS2 Heterojunctions from a Bimetallic Co-chamber Feeding Atomic Layer Deposition for Ultrasensitive MiRNA-21 Detection

Rhenium disulfide (ReS₂), which possessed a unique direct band gap from the bulk to monolayer, played a very important role in establishing optoelectronic devices, while the rapid recombination of electron-hole pairs might hinder its further applications. Therefore, to improve its photocurrent performance, a bimetallic co-chamber feeding atomic layer deposition (ALD) with a precise dose regulation strategy was used to fabricate MoS₂-ReS₂ heterojunctions with a controllable Mo-to-Re ratio in this work. Furthermore, because of the controlled addition of Mo atoms, the electron-transfer capacity, carrier mobility, and photocurrent response of these heterojunctions were significantly improved among which the sample obtained under 100 supercycles (one supercycle for this sample consists of the following in turn: one ReCl₅ pulse, one H₂S pulse, one ReCl₅ pulse, one MoCl₅ pulse, and one H₂S pulse; the real Mo-to-Re ratio R_r = 57.9%) exhibited the best photocurrent response. Due to the significant improvement in optoelectronic performance, a photoelectrochemical (PEC) biosensor with the basis of the above optimized sample could achieve the ultrasensitive detection of cancer-related miRNA-21 ranging from 10 aM to 1 nM with a low detection limit of 2.8 aM.

Stacking-Order-Driven Optical Properties and Carrier Dynamics in ReS2

Two distinct stacking orders in ReS₂ are identified without ambiguity and their influence on vibrational, optical properties and carrier dynamics are investigated. With atomic resolution scanning transmission electron microscopy (STEM), two stacking orders are determined as AA stacking with negligible displacement across layers, and AB stacking with about a one-unit cell displacement along the a axis. First-principles calculations confirm that these two stacking orders correspond to two local energy minima. Raman spectra inform a consistent difference of modes I & III, about 13 cm^-1 for AA stacking, and 20 cm^-1 for AB stacking, making a simple tool for determining the stacking orders in ReS₂ . Polarized photoluminescence (PL) reveals that AB stacking possesses blueshifted PL peak positions, and broader peak widths, compared with AA stacking, indicating stronger interlayer interaction. Transient transmission measured with femtosecond pump-probe spectroscopy suggests exciton dynamics being more anisotropic in AB stacking, where excited state absorption related to Exc. III mode disappears when probe polarization aligns perpendicular to b axis. The findings underscore the stacking-order driven optical properties and carrier dynamics of ReS₂ , mediate many seemingly contradictory results in the literature, and open up an opportunity to engineer electronic devices with new functionalities by manipulating the stacking order.

Direct fabrication of two-dimensional ReS2 on SiO2/Si substrate by a wide-temperature-range atomic layer deposition

The building of high-quality, especially thickness-controllable ReS₂, is the crux of researching it and developing its wider application. In this work, ultrathin (1-5 layers) ReS₂ with controllable thickness and improved quality is obtained on SiO₂/Si substrates, using wide-temperature-range (WTR) atomic layer deposition (ALD). First, a WTR ALD system for building thin films and in situ annealing is constructed. ReS₂ of precise thicknesses can be achieved by regulating the number of ALD cycles, controlling the reaction temperature and plasma treatment. In particular, a method of in situ H₂S annealing is used to reduce S defects, which improves the quality of ReS₂. After annealing, the atomic ratio of S/Re in ReS₂ increases from 1.74 to 1.92, considering the presence of Re-O bond at the SiO₂-ReS₂ interface, which indicates that the S defects in ReS₂ films are completely eliminated at annealing temperature of 850 °C and 900 °C. In particular, at an annealing temperature of 900 °C, ReS₂ recrystallizes to form about 120 nm triangular grains, and its frictional force is reduced by 27.5% compared with the as-grown ReS₂.

High-κ Dielectric on ReS₂: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al₂O₃

We report an excellent growth behavior of a high-κ dielectric on ReS₂, a two-dimensional (2D) transition metal dichalcogenide (TMD). The atomic layer deposition (ALD) of an Al₂O₃ thin film on the UV-Ozone pretreated surface of ReS₂ yields a pinhole free and conformal growth. In-situ half-cycle X-ray photoelectron spectroscopy (XPS) was used to monitor the interfacial chemistry and ex-situ atomic force microscopy (AFM) was used to evaluate the surface morphology. A significant enhancement in the uniformity of the Al₂O₃ thin film was deposited via plasma-enhanced atomic layer deposition (PEALD), while pinhole free Al₂O₃ was achieved using a UV-Ozone pretreatment. The ReS₂ substrate stays intact during all different experiments and processes without any formation of the Re oxide. This work demonstrates that a combination of the ALD process and the formation of weak S⁻O bonds presents an effective route for a uniform and conformal high-κ dielectric for advanced devices based on 2D materials.

Strong One-Dimensional Characteristics of Hole-Carriers in ReS2 and ReSe2

Each plane of layered ReS₂ and ReSe₂ materials has 1D chain structure, from which intriguing properties such as 1D character of the exciton states and linearly polarized photoluminescence originate. However, systematic studies on the 1D character of charge carriers have not been done yet. Here, we report on systematic and comparative studies on the energy-momentum dispersion relationships of layered transition metal dichalcogenides ReS₂ and ReSe₂ by angle resolved photoemission. We found that the valence band maximum or the minimum energy for holes is located at the high symmetric Z-point for both materials. However, the out-of-plane (\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${k}_{z}$$\end{document}kz) dispersion for ReSe₂ (20 meV) is found to be much smaller than that of ReS₂ (150 meV). We observe that the effective mass of the hole carriers along the direction perpendicular to the chain is about 4 times larger than that along the chain direction for both ReS₂ and ReSe₂. Remarkably, the experimentally measured hole effective mass is about twice heavier than that from first principles calculation for ReS₂ although the in-plane anisotropy values from the experiment and calculations are comparable. These observation indicate that bulk ReS₂ and ReSe₂ are unique semiconducting transition metal dichalcogenides having strong one-dimensional characters.

Exciton binding energy and hydrogenic Rydberg series in layered ReS2

Unlike monolayers of transition metal dichalcogenides such as MoS2, which possess high in-plane symmetry, layered ReS2 exhibits reduced in-plane crystal symmetry with a distorted 1 T structure. This unique symmetry leads to anisotropic optical properties, very promising for light polarization devices. Here, we report on low temperature polarization-resolved emission and absorption measurements of excitons in ReS2 from bulk to monolayer. In photoluminescence and reflectivity contrast spectra we distinguish two strongly polarized excitons X1 and X2 with dipole vectors along different crystal directions, which persist from bulk down to monolayer. Basing on the PL and RC spectra of bulk crystals we determine the energy of the ground and first four excited states of both excitons, which follow the usual hydrogenic Rydberg series of energy levels of 3D excitonic states (En = Ry*/n2). From the numerical fit we estimate that the energy gap is direct and equal to 1671.7 meV and binding energy of X1 and X2 is equal to 117.5 and 86.6 meV, respectively. In magneto-PL spectra of bulk ReS2 up to B = 10 T, the energy shift of all the states is below 2 meV. On reducing the crystal thickness from bulk to monolayer the ground state experience a strong blue shift.

Interlayer-Decoupled Sc-Based Mxene with High Carrier Mobility and Strong Light-Harvesting Ability

Two-dimensional (2D) van der Waals (vdW) layered materials offer a unique combination of electronic and structural properties attractive for technological applications. Most of them show strong vdW interactions, which lead to interlayer-coupled optoelectronic properties due to quantum confinement. Here we present a systematic computational study of one Mxene, 2D double-metal-layered scandium chloride carbides (Sc₂CCl₂). Unlike conventional quantum-confined nanosystems, 2D Sc₂CCl₂ exhibits weak vdW interactions with robust interlayer-decoupled optoelectronic properties and extremely high and anisotropic carrier mobilities of about 1-4.5 × 10⁴ cm² V^-1 s^-1 that consequently produce comparatively large drain currents. Specifically, the 2D Sc₂CCl₂ family has strong light-harvesting ability and could be utilized as efficient donor materials in excitonic solar cells. Overall, in combination with high structural stability against ambient conditions, interlayer-decoupled robust optoelectronic properties potentially relax the requirements for the fabrication of high-quality monolayers and for selection of suitable substrates and suggest promising next-generation optoelectronic applications.

Probing the upper band gap of atomic rhenium disulfide layers

Here, we investigate the ultrafast carrier dynamics and electronic states of exfoliated ReS2 films using time-resolved second harmonic generation (TSHG) microscopy and density functional theory (DFT) calculations. The second harmonic generation (SHG) of layers with various thicknesses is probed using a 1.19-eV beam. Up to ~13 nm, a gradual increment is observed, followed by a decrease caused by bulk interferometric light absorption. The addition of a pump pulse tuned to the exciton band gap (1.57 eV) creates a decay-to-rise TSHG profile as a function of the probe delay. The power and thickness dependencies indicate that the electron-hole recombination is mediated by defects and surfaces. The two photon absorptions of 2.38 eV in the excited state that are induced by pumping from 1.57 to 1.72 eV are restricted because these transitions highly correlate with the forbidden d-d intrasubshell orbital transitions. However, the combined usage of a frequency-doubled pump (2.38 eV) with wavelength-variant SHG probes (2.60-2.82 eV) allows us to vividly monitor the variations in TSHG profiles from decay-to-rise to rise-to-decay, which imply the existence of an additional electron absorption state (s-orbital) at an approximate distance of 5.05 eV from the highest occupied molecular orbital states. This observation was critically examined by considering the allowance of each electronic transition and a small upper band gap (~0.5 eV) using modified DFT calculations.

Identifying the Non-Identical Outermost Selenium Atoms and Invariable Band Gaps across the Grain Boundary of Anisotropic Rhenium Diselenide

Rhenium diselenide (ReSe₂) is a unique transition-metal dichalcogenide (TMDC) possessing distorted 1T structure with a triclinic symmetry, strong in-plane anisotropy, and promising applications in optoelectronics and energy-related fields. So far, the structural and physical properties of ReSe₂ are mainly uncovered by transmission electron microscopy and spectroscopy characterizations. Herein, by combining scanning tunneling microscopy and spectroscopy (STM and STS) with first-principles calculations, we accomplish the on-site atomic-scale identification of the top four non-identical Se atoms in a unit cell of the anisotropic monolayer ReSe₂ on the Au substrate. According to STS and photoluminescence results, we also determine the quasiparticle and optical band gaps as well as the exciton binding energy of monolayer ReSe₂. In particular, we detect a perfect lattice coherence and an invariable band gap across the mirror-symmetric grain boundaries in monolayer and bilayer ReSe₂, which considerably differ from the traditional isotropic TMDCs featured with defect structures and additional states inside the band gap. Such essential findings should deepen our understanding of the intrinsic properties of two-dimensional anisotropic materials and provide fundamental references for their applications in related fields.

A Perspective on the Application of Spatially Resolved ARPES for 2D Materials

In this paper, a perspective on the application of Spatially- and Angle-Resolved PhotoEmission Spectroscopy (ARPES) for the study of two-dimensional (2D) materials is presented. ARPES allows the direct measurement of the electronic band structure of materials generating extremely useful insights into their electronic properties. The possibility to apply this technique to 2D materials is of paramount importance because these ultrathin layers are considered fundamental for future electronic, photonic and spintronic devices. In this review an overview of the technical aspects of spatially localized ARPES is given along with a description of the most advanced setups for laboratory and synchrotron-based equipment. This technique is sensitive to the lateral dimensions of the sample. Therefore, a discussion on the preparation methods of 2D material is presented. Some of the most interesting results obtained by ARPES are reported in three sections including: graphene, transition metal dichalcogenides (TMDCs) and 2D heterostructures. Graphene has played a key role in ARPES studies because it inspired the use of this technique with other 2D materials. TMDCs are presented for their peculiar transport, optical and spin properties. Finally, the section featuring heterostructures highlights a future direction for research into 2D material structures.

Unraveling the Raman Enhancement Mechanism on 1T'-Phase ReS2 Nanosheets

2D transition metal dichalcogenides materials are explored as potential surface-enhanced Raman spectroscopy substrates. Herein, a systematic study of the Raman enhancement mechanism on distorted 1T (1T') rhenium disulfide (ReS₂ ) nanosheets is demonstrated. Combined Raman and photoluminescence studies with the introduction of an Al₂ O₃ dielectric layer unambiguously reveal that Raman enhancement on ReS₂ materials is from a charge transfer process rather than from an energy transfer process, and Raman enhancement is inversely proportional while the photoluminescence quenching effect is proportional to the layer number (thickness) of ReS₂ nanosheets. On monolayer ReS₂ film, a strong resonance-enhanced Raman scattering effect dependent on the laser excitation energy is detected, and a detection limit as low as 10^-9 m can be reached from the studied dye molecules such as rhodamine 6G and methylene blue. Such a high enhancement factor achieved through enhanced charge interaction between target molecule and substrate suggests that with careful consideration of the layer-number-dependent feature and excitation-energy-related resonance effect, ReS₂ is a promising Raman enhancement platform for sensing applications.