Dislocations in AlGaN: Core Structure, Atom Segregation, and Optical Properties

Effect of Extended Defects on AlGaN Quantum Dots for Electron-Pumped Ultraviolet Emitters

We study the origin of bimodal emission in AlGaN/AlN QD superlattices displaying a high internal quantum efficiency (around 50%) in the 230-300 nm spectral range. The secondary emission at longer wavelengths is linked to the presence of cone-like domains with deformed QD layers, which originate at the first AlN buffer/superlattice interface and propagate vertically. The cones originate at a 30°-faceted shallow pit in the AlN, which appears to be associated with a threading dislocation that produces strong shear strain. The cone-like structures present Ga enrichment at the boundaring facets and larger QDs within the conic domain. The bimodality of the luminescence is attributed to the differing dot size and composition within the cones and at the faceted boundaries, which is confirmed by the correlation of microscopy results and Schrödinger-Poisson calculations.

The dissociation of (a+c) misfit dislocations at the InGaN/GaN interface

In hexagonal materials, (a+c) dislocations are typically observed to dissociate into partial dislocations. Edge (a+c) dislocations are introduced into (0001) nitride semiconductor layers by the process of plastic relaxation. As there is an increasing interest in obtaining relaxed InGaN buffer layers for the deposition of high In content structures, the study of the dissociation mechanism of misfit (a+c) dislocations laying at the InGaN/GaN interface is then crucial for understanding their nucleation and glide mechanisms. In the case of the presented plastically relaxed InGaN layers deposited on GaN substrates, we observe a trigonal network of (a+c) dislocations extending at the interface with a rotation of 3° from <11 ¯ $\bar 1$ 00> directions. High-resolution microscopy studies show that these dislocations are dissociated into two Frank-Shockley 1/6<22 ¯ $\bar 2$ 03> partial dislocations with the I1 BSF spreading between them. Atomistic simulations of a dissociated edge (a+c) dislocation revealed a 3/5-atom ring structure for the cores of both partial dislocations. The observed separation between two partial dislocations must result from the climb of at least one of the dislocations during the dissociation process, possibly induced by the mismatch stress in the InGaN layer.

Atomic Diffusion of Indium through Threading Dislocations in InGaN Quantum Wells

The compositional and structural investigations of threading dislocations (TDs) in InGaN/GaN multiple quantum wells were carried out using correlative transmission electron microscopy (TEM) and atom probe tomography (APT). The correlative TEM/APT analysis on the same TD reveals that the indium atoms are diffused along the TD and its concentration decreases with distance from the InGaN layer. On the basis of the results, we directly observed that the indium atoms originating from the InGaN layer diffuse toward the epitaxial GaN surface through the TD, and it is considered to have occurred via the pipe diffusion mechanism induced by strain energy relaxation.

Role of Strain-Induced Microscale Compositional Pulling on Optical Properties of High Al Content AlGaN Quantum Wells for Deep-Ultraviolet LED

A systematic study was carried out for strain-induced microscale compositional pulling effect on the structural and optical properties of high Al content AlGaN multiple quantum wells (MQWs). Investigations reveal that a large tensile strain is introduced during the epitaxial growth of AlGaN MQWs, due to the grain boundary formation, coalescence and growth. The presence of this tensile strain results in the microscale inhomogeneous compositional pulling and Ga segregation, which is further confirmed by the lower formation enthalpy of Ga atom than Al atom on AlGaN slab using first principle simulations. The strain-induced microscale compositional pulling leads to an asymmetrical feature of emission spectra and local variation in emission energy of AlGaN MQWs. Because of a stronger three-dimensional carrier localization, the area of Ga segregation shows a higher emission efficiency compared with the intrinsic area of MQWs, which is benefit for fabricating efficient AlGaN-based deep-ultraviolet light-emitting diode.

Effect of indium doping on motions of 〈a〉-prismatic edge dislocations in wurtzite gallium nitride

The influences of indium doping on dynamics of 〈a〉-prismatic edge dislocation along [Formula: see text] shuffle plane in wurtzite GaN have been investigated employing classical molecular dynamics (MD) simulations. The dependence of dislocation motion mode and dislocation velocity on indium doping concentration, temperature, and applied shear stress was clarified. Moreover, the simulation results were further analyzed using elastic theory of dislocation and thermal activation theory of dislocation motion, showing excellent agreement with the simulation. Our findings help gain deep insights into modifying dynamic behaviors of TDs through the alloying doping and offer generic tools to the study of other wurtzite materials of promising application prospects, such as AlGaN and ZnO.

Quantitative intrinsic auto-cathodoluminescence can resolve spectral signatures of tissue-isolated collagen extracellular matrix

By analyzing isolated collagen gel samples, we demonstrated in situ detection of spectrally deconvoluted auto-cathodoluminescence signatures of specific molecular content with precise spatial localization over a maximum field of view of 300 µm. Correlation of the secondary electron and the hyperspectral images proved ~40 nm resolution in the optical channel, obtained due to a short carrier diffusion length, suppressed by fibril dimensions and poor electrical conductivity specific to their organic composition. By correlating spectrally analyzed auto-cathodoluminescence with mass spectroscopy data, we differentiated spectral signatures of two extracellular matrices, namely human fibrin complex and rat tail collagen isolate, and uncovered differences in protein distributions of isolated extracellular matrix networks of heterogeneous populations. Furthermore, we demonstrated that cathodoluminescence can monitor the progress of a human cell-mediated remodeling process, where human collagenous matrix was deposited within a rat collagenous matrix. The revealed change of the heterogeneous biological composition was confirmed by mass spectroscopy.

Zielinski et al. show that quantitative label-free cathodoluminescence-scanning electron microscopy differentiates spectral signatures of two extracellular matrices. This method can monitor the progress of a smooth muscle cell-mediated remodeling process without using antibodies to enhance the optical signal.

Microscopic View of Defect Evolution in Thermal Treated AlGaInAs Quantum Well Revealed by Spatially Resolved Cathodoluminescence

An aluminum gallium indium arsenic (AlGaInAs) material system is indispensable as the active layer of diode lasers emitting at 1310 or 1550 nm, which are used in optical fiber communications. However, the course of the high-temperature instability of a quantum well structure, which is closely related to the diffusion of indium atoms, is still not clear due to the system’s complexity. The diffusion process of indium atoms was simulated by thermal treatment, and the changes in the optical and structural properties of an AlGaInAs quantum well are investigated in this paper. Compressive strained Al_0.07Ga_0.22In_0.71As quantum wells were treated at 170 °C with different heat durations. A significant decrement of photoluminescence decay time was observed on the quantum well of a sample that was annealed after 4 h. The microscopic cathodoluminescent (CL) spectra of these quantum wells were measured by scanning electron microscope-cathodoluminescence (SEM-CL). The thermal treatment effect on quantum wells was characterized via CL emission peak wavelength and energy density distribution, which were obtained by spatially resolved cathodoluminescence. The defect area was clearly observed in the Al_0.07Ga_0.22In_0.71As quantum wells layer after thermal treatment. CL emissions from the defect core have higher emission energy than those from the defect-free regions. The defect core distribution, which was associated with indium segregation gradient distribution, showed asymmetric character.