Phase-Controlled Growth of One-Dimensional Mo6Te6 Nanowires and Two-Dimensional MoTe2 Ultrathin Films Heterostructures

Solution-Processable Large-Area Black Phosphorus/Reduced Graphene Oxide Schottky Junction for High-Temperature Broadband Photodetectors

2D materials-based broadband photodetectors have extensive applications in security monitoring and remote sensing fields, especially in supersonic aircraft that require reliable performance under extreme high-temperature conditions. However, the integration of large-area heterostructures with 2D materials often involves high-temperature deposition methods, and also limited options and size of substrates. Herein, a liquid-phase spin-coating method is presented based on the interface engineering to prepare larger-area Van der Waals heterojunctions of black phosphorus (BP)/reduced graphene oxide (RGO) films at room temperature on arbitrary substrates of any required size. Importantly, this method avoids the common requirement of high-temperature, and prevents the curling or stacking in 2D materials during the liquid-phase film formation. The BP/RGO films-based devices exhibit a wide spectral photo-response, ranging from the visible of 532 nm to infrared range of 2200 nm. Additionally, due to Van der Waals interface of Schottky junction, the array devices provide infrared detection at temperatures up to 400 K, with an outstanding photoresponsivity (R) of 12 A W-1 and a specific detectivity (D*) of ≈2.4 × 109 Jones. This work offers an efficient approach to fabricate large-area 2D Schottky junction films by solution-coating for high-temperature infrared photodetectors.

Constrained patterning of orientated metal chalcogenide nanowires and their growth mechanism

One-dimensional metallic transition-metal chalcogenide nanowires (TMC-NWs) hold promise for interconnecting devices built on two-dimensional (2D) transition-metal dichalcogenides, but only isotropic growth has so far been demonstrated. Here we show the direct patterning of highly oriented Mo6Te6 NWs in 2D molybdenum ditelluride (MoTe2) using graphite as confined encapsulation layers under external stimuli. The atomic structural transition is studied through in-situ electrical biasing the fabricated heterostructure in a scanning transmission electron microscope. Atomic resolution high-angle annular dark-field STEM images reveal that the conversion of Mo6Te6 NWs from MoTe2 occurs only along specific directions. Combined with first-principles calculations, we attribute the oriented growth to the local Joule-heating induced by electrical bias near the interface of the graphite-MoTe2 heterostructure and the confinement effect generated by graphite. Using the same strategy, we fabricate oriented NWs confined in graphite as lateral contact electrodes in the 2H-MoTe2 FET, achieving a low Schottky barrier of 11.5 meV, and low contact resistance of 43.7 Ω µm at the metal-NW interface. Our work introduces possible approaches to fabricate oriented NWs for interconnections in flexible 2D nanoelectronics through direct metal phase patterning.

van der Waals Engineering of Charge Density Waves in One-Dimensional Nb6Te6 Nanowires

One-dimensional (1D) systems have played a crucial role in the development of fundamental physics and practical applications. Recently, transition metal monochalcogenide (TMM) wires based on molybdenum (Mo) and tungsten (W) have emerged as promising platforms for investigating 1D physics in pure van der Waals (vdW) platforms. Here, we report on the bottom-up fabrication of Nb6Te6 wires down to the single-wire limit. The unique properties of Nb6Te6 single wire enable the realization of 1D charge density wave (CDW) phases in an isolated single TMM wire. Moreover, we revealed the appealing regulation of 1D CDW orders by van der Waals interactions at either the 1D-2D interface (i.e., rotation of a single wire along its wire axis) or the 1D-1D interface. Two rotation angles (30° and 0°) give rise to 3 × 1 and zigzag chain CDW morphologies, respectively, which exhibit pronounced differences in atomic displacement by a factor of 2. The interwire vdW coupling overwhelms its counterpart at the 1D-2D interface, thus locking the rotation angle (at 0°) as well as the interwire atomic registries. In contrast, interestingly, the phases of the charge oscillations are independent of the adjacent wires. The ability to tailor 1D charge orders provides a crucial addition to the toll set of vdW integrations beyond two-dimensional materials.

Phase transformations in single-layer MoTe2stimulated by electron irradiation and annealing

Among two-dimensional (2D) transition metal dichalcogenides (TMDs), MoTe2is predestined for phase-engineering applications due to the small difference in free energy between the semiconducting H-phase and metallic 1T'-phase. At the same time, the complete picture of the phase evolution originating from point defects in single-layer of semiconducting H-MoTe2via Mo6Te6nanowires to cubic molybdenum has not yet been reported so far, and it is the topic of the present study. The occurring phase transformations in single-layer H-MoTe2were initiated by 40-80 kV electrons in the spherical and chromatic aberration-corrected high-resolution transmission electron microscope and/or when subjected to high temperatures. We analyse the damage cross-section at voltages between 40 kV and 80 kV and relate the results to previously published values for other TMDs. Then we demonstrate that electron beam irradiation offers a route to locally transform freestanding single-layer H-MoTe2into one-dimensional (1D) Mo6Te6nanowires. Combining the experimental data with the results of first-principles calculations, we explain the transformations in MoTe2single-layers and Mo6Te6nanowires by an interplay of electron-beam-induced energy transfer, atom ejection, and oxygen absorption. Further, the effects emerging from electron irradiation are compared with those produced byin situannealing in a vacuum until pure molybdenum crystals are obtained at temperatures of about 1000 °C. A detailed understanding of high-temperature solid-to-solid phase transformation in the 2D limit can provide insights into the applicability of this material for future device fabrication.

Electronic Janus lattice and kagome-like bands in coloring-triangular MoTe2 monolayers

Polymorphic structures of transition metal dichalcogenides (TMDs) host exotic electronic states, like charge density wave and superconductivity. However, the number of these structures is limited by crystal symmetries, which poses a challenge to achieving tailored lattices and properties both theoretically and experimentally. Here, we report a coloring-triangle (CT) latticed MoTe2 monolayer, termed CT-MoTe2, constructed by controllably introducing uniform and ordered mirror-twin-boundaries into a pristine monolayer via molecular beam epitaxy. Low-temperature scanning tunneling microscopy and spectroscopy (STM/STS) together with theoretical calculations reveal that the monolayer has an electronic Janus lattice, i.e., an energy-dependent atomic-lattice and a Te pseudo-sublattice, and shares the identical geometry with the Mo5Te8 layer. Dirac-like and flat electronic bands inherently existing in the CT lattice are identified by two broad and two prominent peaks in STS spectra, respectively, and verified with density-functional-theory calculations. Two types of intrinsic domain boundaries were observed, one of which maintains the electronic-Janus-lattice feature, implying potential applications as an energy-tunable electron-tunneling barrier in future functional devices.

Observations of Charge-Density-Wave States in W6Te6 Wires

Determining the electronic ground state of a one-dimensional system is crucial to understanding the underlying physics of electronic behavior. Here, we demonstrate the discovery of charge-density wave states in few-wire W6Te6 arrays using scanning tunneling microscopy/spectroscopy. We directly visualize incommensurate charge orders, energy gaps with prominent coherence peaks, and the picometer-scale lattice distortion in nearly disorder-free double-wire systems, thereby demonstrating the existence of Peierls-type charge density waves. In the presence of disorder-induced charge order fluctuations, the coherence peaks resulting from phase correlation disappear and gradually transform the system into the pseudogap states. The power-law zero-bias anomaly and quasi-particle interference analysis further suggest the Tomonaga-Luttinger liquid behavior in such pseudogap region. In addition, we explicitly determined the evolution of the CDW energy gap as a function of stacking-wire numbers. The present study demonstrates the existence of electron-phonon interactions in few-wire W6Te6 that can be tuned by disorders and van der Waals stacking.

Controllable dimensionality conversion between 1D and 2D CrCl3 magnetic nanostructures

The fabrication of one-dimensional (1D) magnetic systems on solid surfaces, although of high fundamental interest, has yet to be achieved for a crossover between two-dimensional (2D) magnetic layers and their associated 1D spin chain systems. In this study, we report the fabrication of 1D single-unit-cell-width CrCl₃ atomic wires and their stacked few-wire arrays on the surface of a van der Waals (vdW) superconductor NbSe₂. Scanning tunneling microscopy/spectroscopy and first-principles calculations jointly revealed that the single wire shows an antiferromagnetic large-bandgap semiconducting state in an unexplored structure different from the well-known 2D CrCl₃ phase. Competition among the total energies and nanostructure-substrate interfacial interactions of these two phases result in the appearance of the 1D phase. This phase was transformable to the 2D phase either prior to or after the growth for in situ or ex situ manipulations, in which the electronic interactions at the vdW interface play a nontrivial role that could regulate the dimensionality conversion and structural transformation between the 1D-2D CrCl₃ phases.

Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications

The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.

Molecular beam epitaxy growth and scanning tunneling microscopy study of 2D layered materials on epitaxial graphene/silicon carbide

Since the advent of atomically flat graphene, two-dimensional (2D) layered materials have gained extensive interest due to their unique properties. The 2D layered materials prepared on epitaxial graphene/silicon carbide (EG/SiC) surface by molecular beam epitaxy (MBE) have high quality, which can be directly applied without further transfer to other substrates. Scanning tunneling microscopy and spectroscopy (STM/STS) with high spatial resolution and high-energy resolution are often used to study the morphologies and electronic structures of 2D layered materials. In this review, recent progress in the preparation of various 2D layered materials that are either monoelemental or transition metal dichalcogenides on EG/SiC surface by MBE and their STM/STS investigations are introduced.

Phase control and lateral heterostructures of MoTe2 epitaxially grown on graphene/Ir(111)

Engineering the growth of the different phases of two-dimensional transition metal dichalcogenides (2D-TMDs) is a promising way to exploit their potential since the phase determines their physical and chemical properties. Here, we report on the epitaxial growth of monolayer MoTe₂ on graphene on an Ir(111) substrate. Scanning tunneling microscopy and spectroscopy provide insights into the structural and electronic properties of the different polymorphic phases, which remain decoupled from the substrate due to the weak interaction with graphene. In addition, we demonstrate a great control of the relative coverage of the relevant 1T' and 1H MoTe₂ phases by varying the substrate temperature during the growth. In particular, we obtain large areas of the 1T' phase exclusively or the coexistence of both phases with different ratios.

Multiple 2D Phase Transformations in Monolayer Transition Metal Chalcogenides

Phase transformation lies at the heart of materials science because it allows for the control of structural phases of solids with desired properties. It has long been a challenge to manipulate phase transformations in crystals at the nanoscale with designed interfaces and compositions. Here in situ electron microscopy is employed to fabricate novel 2D phases with different stoichiometries in monolayer MoS₂ and MoSe₂ . The multiphase transformations: MoS₂  → Mo₄ S₆ and MoSe₂  → Mo₆ Se₆ which are highly localized with atomically sharp boundaries are observed. Their atomic mechanisms are determined as chalcogen 2H ↔ 1T sliding, cation shift, and commensurate lattice reconstructions, resulting in decreasing direct bandgaps and even a semiconductor-metal transition. These results will be a paradigm for the manipulation of multiphase heterostructures with controlled compositions and sharp interfaces, which will guide the future phase engineered electronics and optoelectronics of metal chalcogenides.

2D-1D mixed-dimensional heterostructures: progress, device applications and perspectives

Two-dimensional (2D) materials have attracted broad interests and been extensively exploited for a variety of functional applications. Moreover, one-dimensional (1D) atomic crystals can also be integrated into 2D templates to create mixed-dimensional heterostructures, and the versatility of combinations provides 2D-1D heterostructures plenty of intriguing physical properties, making them promising candidate to construct novel electronic and optoelectronic nanodevices. In this review, we first briefly present an introduction of relevant fabrication methods and structural configurations for 2D-1D heterostructures integration. We then discuss the emerged intriguing physics, including high optical absorption, efficient carrier separation, fast charge transfer and plasmon-exciton interconversion. Their potential applications such as electronic/optoelectronic devices, photonic devices, spintronic devices and gas sensors, are also discussed. Finally, we provide a brief perspective for the future opportunities and challenges in this emerging field.

Correlating the electronic structures of metallic/semiconducting MoTe2 interface to its atomic structures

Contact interface properties are important in determining the performances of devices that are based on atomically thin two-dimensional (2D) materials, especially for those with short channels. Understanding the contact interface is therefore important to design better devices. Herein, we use scanning transmission electron microscopy, electron energy loss spectroscopy, and first-principles calculations to reveal the electronic structures within the metallic (1T')-semiconducting (2H) MoTe2 coplanar phase boundary across a wide spectral range and correlate its properties to atomic structures. We find that the 2H-MoTe2 excitonic peaks cross the phase boundary into the 1T' phase within a range of approximately 150 nm. The 1T'-MoTe2 crystal field can penetrate the boundary and extend into the 2H phase by approximately two unit-cells. The plasmonic oscillations exhibit strong angle dependence, that is a red-shift of π+σ (approximately 0.3-1.2 eV) occurs within 4 nm at 1T'/2H-MoTe2 boundaries with large tilt angles, but there is no shift at zero-tilted boundaries. These atomic-scale measurements reveal the structure-property relationships of the 1T'/2H-MoTe2 boundary, providing useful information for phase boundary engineering and device development based on 2D materials.

Wafer-Scale Growth of One-Dimensional Transition-Metal Telluride Nanowires

The development of bulk synthetic processes to prepare functional nanomaterials is crucial to achieve progress in fundamental and applied science. Transition-metal chalcogenide (TMC) nanowires, which are one-dimensional (1D) structures having three-atom diameters and van der Waals surfaces, have been reported to possess a 1D metallic nature with great potential in electronics and energy devices. However, their mass production remains challenging. Here, a wafer-scale synthesis of highly crystalline transition-metal telluride nanowires is demonstrated by chemical vapor deposition. The present technique enables formation of either aligned, atomically thin two-dimensional (2D) sheets or random networks of three-dimensional (3D) bundles, both composed of individual nanowires. These nanowires exhibit an anisotropic 1D optical response and superior conducting properties. The findings not only shed light on the controlled and large-scale synthesis of conductive thin films but also provide a platform for the study on physics and device applications of nanowire-based 2D and 3D crystals.

Precise Tuning of Band Structures and Electron Correlations by van der Waals Stacking of One-dimensional W6Te6 Wires

Stacking of two-dimensional (2D) van der Waals (vdW) atomic sheets has been established as a powerful approach to fabricating new materials with broad versatilities and emergent functionalities. Here we demonstrate a bottom-up approach to fabricating isolated single W₆Te₆ wires and their lateral assemblies, offering a unique platform for investigating the elegant role of vdW coupling in 1D systems with atomic precision. We find experimentally and theoretically a single W₆Te₆ wire is a 1D semiconductor with a band gap of ∼60 meV, and a semiconductor-to-metal transition takes place upon interwire vdW stacking. The metallic multiwires exhibit strong Tomonaga-Luttinger liquid characteristics with the correlation parameter g varying from g = 0.086 for biwire to g = 0.136 for six-wire assemblies, all much reduced from the Fermi liquid regime (g = 1). The present study demonstrates wire-by-wire vdW stacking is a versatile means for fabrication of 1D systems with tunable electronic properties.

Mixed-Dimensional In-Plane Heterostructures from 1D Mo6 Te6 and 2D MoTe2 Synthesized by Te-Flux-Controlled Chemical Vapor Deposition

Mixed-dimensional van der Waals heterostructures are scientifically important and practically useful because of their interesting exotic properties resulting from their novel hybrid structures. This study reports the composition- and phase-selective fabrication of low-dimensional molybdenum/tellurium (Mo/Te) compounds and the direct synthesis of mixed-dimensional in-plane 1D-2D Mo₆ Te₆ -MoTe₂ heterostructures. The composition and phase of the Mo/Te compounds are controlled by changing the Te atomic flux that is adjusted by the Te temperature. Metallic 1D Mo₆ Te₆ wires with an intrinsic 1D structure with a diameter of 3-8 nm and length of 100-300 nm are synthesized to form wire networks under low Te flux conditions, whereas the semiconducting few-layer 2H MoTe₂ films preferentially oriented along the <0001> direction are obtained under high Te flux. Under medium Te flux, the mixed-dimensional in-plane 1D-2D Mo₆ Te₆ -MoTe₂ heterostructures are synthesized in which the semiconducting few-layer 2H MoTe₂ circular domains are edge-contacted by the metallic 1D Mo₆ Te₆ wire networks. Furthermore, the present Te-flux-controlled method reveals that the 1D Mo₆ Te₆ networks change to few-layer MoTe₂ films as the Te flux increases. The in-plane 1D-2D Mo₆ Te₆ -MoTe₂ heterostructures synthesized by this method can be considered as advanced edge-contacted 2D semiconductors for high-performance 2D electronics.

Efficient growth and characterization of one-dimensional transition metal tellurides inside carbon nanotubes

Atomically thin one-dimensional (1D) van der Waals wires of transition metal monochalocogenides (TMMs) have been anticipated as promising building blocks for integrated nanoelectronics. While reliable production of TMM nanowires has eluded scientists over the past few decades, we finally demonstrated a bottom-up fabrication of MoTe nanowires inside carbon nanotubes (CNTs). Still, the current synthesis method is based on vacuum annealing of reactive MoTe₂, and limits access to a variety of TMMs. Here we report an expanded framework for high-yield synthesis of the 1D tellurides including WTe, an previously unknown family of TMMs. Experimental and theoretical analyses revealed that the choice of suitable metal oxides as a precursor provides a useful yield for their characterization. These TMM nanowires exhibit a significant optical absorption in the visible-light region. More important, electronic properties of CNTs can be tuned by encapsulating different TMM nanowires.

Direct Observation of One-Dimensional Peierls-type Charge Density Wave in Twin Boundaries of Monolayer MoTe2

One-dimensional (1D) metallic mirror-twin boundaries (MTBs) in monolayer transition-metal dichalcogenides exhibit a periodic charge modulation and provide an ideal platform for exploring collective electron behavior in the confined system. The underlying mechanism of the charge modulation and how the electrons travel in 1D structures remain controversial. Here, for the first time, we observed atomic-scale structures of the charge distribution within one period in MTB of monolayer MoTe₂ by using scanning tunneling microscopy/spectroscopy. The coexisting apparent periodic lattice distortions and U-shaped energy gap clearly demonstrate a Peierls-type charge density wave (CDW). Equidistant quantized energy levels with varied periodicity are further discovered outside the CDW gap along the metallic MTB. Density functional theory calculations are in good agreement with the gapped electronic structures and reveal that they originate mainly from a Mo 4d orbital. Our work presents hallmark evidence of the 1D Peierls-type CDW on the metallic MTBs and offers opportunities to study the underlying physics of 1D charge modulation.

1D topological phases in transition-metal monochalcogenide nanowires

The Su-Schrieffer-Heeger (SSH) model is a prototypical one-dimensional (1D) diatomic lattice model for non-trivial topological phases and topological excitations. Theoretically, many variations and extensions of the SSH model have been proposed and explored to better understand the novel aspects of topological physics in low dimensions on the nanoscale. However, the outstanding challenge remains to find real nanomaterials with robust structural stability for realizing the 1D topological states. Here, we develop an extended version of the SSH model with multi-atomic bases of four, six and eight atoms and an imposed screw rotation symmetry. Furthermore, based on first-principles calculations, we demonstrate the realization of this model in transition metal monochalcogenide M6X6 (M = Mo and W; X = S, Se and Te) nanowires. The topological features of the doped M6X6 nanowires are confirmed with non-trivial edge modes and e/2 fractional charges, representative of the 1D non-trivial Zak phase. Our finding not only sheds new light on our fundamental understanding of 1D topological physics, but also significantly extends the scope of 1D topological materials that will attract immediate experimental interest, since isolated M6X6 nanowires have already been synthesized in experiments.

Transition-metal monochalcogenide nanowires: highly efficient bi-functional catalysts for the oxygen evolution/reduction reactions

Stable bi-functional electrocatalysts for the oxygen evolution/reduction reactions (OER/ORR) are desirable for rechargeable metal-air batteries and regenerative fuel cell technologies. In this study, the electronic structures and catalytic performance of recently synthesized transition-metal monochalcogenide (MX, M = Cr, Mo, W; X = S, Se, Te) nanowires (NWs) were systemically investigated based on first-principles calculations. The results demonstrate that these MX NWs can be deemed as efficient bi-functional catalysts for the OER/ORR. In particular, the low overpotentials of CrTe NWs are even superior to those of the well-known noble catalysts. To study the origin of excellent electrocatalytic performance, we establish linear relationships between the adsorption strength of intermediates and the overpotentials. A comparison study reveals that the NWs exhibit better catalytic performance than the corresponding two-dimensional materials, indicating the superiority of the unique NW structures for catalysis. These computational results offer not only a new family of bi-functional OER/ORR catalysts, but also a promising perspective for the development of stable, low-cost and highly active non-noble electrocatalysts.

Substrate temperature dependence of the crystalline quality for the synthesis of pure-phase MoTe2 on graphene/6H-SiC(0001) by molecular beam epitaxy

MoTe₂ has two stable solid phases. 2H-MoTe₂ is semiconducting while 1T' is semimetallic. The selective synthesis of pure-phase thin films is still challenging. In this study, we have investigated the growth temperature dependence of MoTe₂ synthesized by molecular beam epitaxy and have identified the optimum temperature for growing the stoichiometric films. It is confirmed that the crystalline quality of MoTe₂ strongly depends on the substrate temperature. Post-growth annealing of grown layers at 400 °C stabilizes the semiconducting phase. The structural properties and the phase change in our materials are analyzed in details by reflection high energy electron diffraction, low energy electron diffraction, auger electron spectroscopy, x-ray photoemission spectroscopy, and scanning tunneling microscopy.

Isolation of Single-Wired Transition-Metal Monochalcogenides by Carbon Nanotubes

The successful isolation of single layers from two-dimensional (2D) van der Waals (vdW)-layered materials has opened new frontiers in condensed matter physics and materials science. Their discovery and unique properties laid the foundation for exploring 1D counterparts. However, the isolation of 1D vdW-wired materials has thus far remained a challenge, and effective techniques are demanded. Here we report the facile synthesis of isolated transition-metal monochalcogenide MoTe nanowires by using carbon nanotubes (CNTs) as molds. Individual nanowires are perfectly separated by CNTs with a minimal interaction, enabling detailed characterization of the single wires. Transmission electron microscopy revealed unusual torsional motion of MoTe nanowires inside CNTs. Confinement of 1D vdW-wired materials to the nanotest tubes might open up possibilities for exploring unprecedented properties of the nanowires and their potential applications such as electromechanical switching devices.

High-Performance, Room Temperature, Ultra-Broadband Photodetectors Based on Air-Stable PdSe2

Photodetection over a broad spectral range is crucial for optoelectronic applications such as sensing, imaging, and communication. Herein, a high-performance ultra-broadband photodetector based on PdSe₂ with unique pentagonal atomic structure is reported. The photodetector responds from visible to mid-infrared range (up to ≈4.05 µm), and operates stably in ambient and at room temperature. It promises improved applications compared to conventional mid-infrared photodetectors. The highest responsivity and external quantum efficiency achieved are 708 A W^-1 and 82 700%, respectively, at the wavelength of 1064 nm. Efficient optical absorption beyond 8 µm is observed, indicating that the photodetection range can extend to longer than 4.05 µm. Owing to the low crystalline symmetry of layered PdSe₂ , anisotropic properties of the photodetectors are observed. This emerging material shows potential for future infrared optoelectronics and novel devices in which anisotropic properties are desirable.

van der Waals Epitaxy of High-Mobility Polymorphic Structure of Mo6Te6 Nanoplates/MoTe2 Atomic Layers with Low Schottky Barrier Height

High contact resistance between two-dimensional (2D) transition metal dichalcogenides (TMDs) and metal electrodes is a practical barrier for applications of 2D TMDs to conventional devices. A promising solution to this is polymorphic integration of 1T'-phase semimetallic and 2H-phase semiconducting TMD crystals, which can lower the Schottky barrier of the TMDs. Here, we demonstrate the van der Waals epitaxy of density-controlled single isolated 1T'-Mo₆Te₆ nanoplates on 2H-MoTe₂ atomic layers by using metal-organic chemical vapor deposition. Importantly, in situ grown 1T'-Mo₆Te₆ nanoplates significantly reduce the contact resistance of the 2H-MoTe₂ atomic layers, providing a record high mobility of 1139 cm²/V·s for Pd/1T'-Mo₆Te₆/2H-MoTe₂ back-gated field-effect transistors, along with a low Schottky barrier height ( qϕ_b) of 8.7 meV. These results lead to the possibility of ameliorating the high contact resistance faced by other TMDs and, furthermore, offer polymorphic structures for realizing higher-mobility TMD devices.