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Yu X, Ji Y, Shen X, Le X. Progress in Advanced Infrared Optoelectronic Sensors. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:845. [PMID: 38786801 PMCID: PMC11123936 DOI: 10.3390/nano14100845] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/08/2024] [Revised: 05/09/2024] [Accepted: 05/10/2024] [Indexed: 05/25/2024]
Abstract
Infrared optoelectronic sensors have attracted considerable research interest over the past few decades due to their wide-ranging applications in military, healthcare, environmental monitoring, industrial inspection, and human-computer interaction systems. A comprehensive understanding of infrared optoelectronic sensors is of great importance for achieving their future optimization. This paper comprehensively reviews the recent advancements in infrared optoelectronic sensors. Firstly, their working mechanisms are elucidated. Then, the key metrics for evaluating an infrared optoelectronic sensor are introduced. Subsequently, an overview of promising materials and nanostructures for high-performance infrared optoelectronic sensors, along with the performances of state-of-the-art devices, is presented. Finally, the challenges facing infrared optoelectronic sensors are posed, and some perspectives for the optimization of infrared optoelectronic sensors are discussed, thereby paving the way for the development of future infrared optoelectronic sensors.
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Affiliation(s)
- Xiang Yu
- School of Physics, Beihang University, Beijing 100191, China
- Beijing Advanced Innovation Center for Big Data-Based Precision Medicine, School of Medicine and Engineering, Beihang University, Beijing 100191, China
- Beijing Key Laboratory of Advanced Nuclear Energy Materials and Physics, Beihang University, Beijing 100191, China
| | - Yun Ji
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583, Singapore
| | - Xinyi Shen
- School of Physics, Beihang University, Beijing 100191, China
- Beijing Advanced Innovation Center for Big Data-Based Precision Medicine, School of Medicine and Engineering, Beihang University, Beijing 100191, China
- Beijing Key Laboratory of Advanced Nuclear Energy Materials and Physics, Beihang University, Beijing 100191, China
| | - Xiaoyun Le
- School of Physics, Beihang University, Beijing 100191, China
- Beijing Advanced Innovation Center for Big Data-Based Precision Medicine, School of Medicine and Engineering, Beihang University, Beijing 100191, China
- Beijing Key Laboratory of Advanced Nuclear Energy Materials and Physics, Beihang University, Beijing 100191, China
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2
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Jeddi H, Adham K, Zhao Y, Witzigmann B, Römer F, Bermeo M, Borgström MT, Pettersson H. Enhanced LWIR response of InP/InAsP quantum discs-in-nanowire array photodetectors by photogating and ultra-thin ITO contacts. NANOTECHNOLOGY 2024; 35:215206. [PMID: 38382119 DOI: 10.1088/1361-6528/ad2bd0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/16/2024] [Accepted: 02/21/2024] [Indexed: 02/23/2024]
Abstract
Here we report on an experimental and theoretical investigation of the long-wavelength infrared (LWIR) photoresponse of photodetectors based on arrays of three million InP nanowires with axially embedded InAsP quantum discs. An ultra-thin top indium tin oxide contact combined with a novel photogating mechanism facilitates an improved LWIR normal incidence sensitivity in contrast to traditional planar quantum well photodetectors. The electronic structure of the quantum discs, including strain and defect-induced photogating effects, and optical transition matrix elements were calculated by an 8-bandk·psimulation along with solving drift-diffusion equations to unravel the physics behind the generation of narrow linewidth intersubband signals observed from the quantum discs.
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Affiliation(s)
- Hossein Jeddi
- Solid State Physics and NanoLund, Lund University, Box 118, SE-221 00 Lund, Sweden
- School of Information Technology, Halmstad University, Box 823, SE-301 18 Halmstad, Sweden
| | - Kristi Adham
- Solid State Physics and NanoLund, Lund University, Box 118, SE-221 00 Lund, Sweden
| | - Yue Zhao
- Solid State Physics and NanoLund, Lund University, Box 118, SE-221 00 Lund, Sweden
| | - Bernd Witzigmann
- Institute for Optoelectronics, Friedrich-Alexander Universität Erlangen-Nürnberg, Konrad-Zuse Str. 3/5, D-91052 Erlangen, Germany
| | - Friedhard Römer
- Institute for Optoelectronics, Friedrich-Alexander Universität Erlangen-Nürnberg, Konrad-Zuse Str. 3/5, D-91052 Erlangen, Germany
| | - Marie Bermeo
- Solid State Physics and NanoLund, Lund University, Box 118, SE-221 00 Lund, Sweden
| | - Magnus T Borgström
- Solid State Physics and NanoLund, Lund University, Box 118, SE-221 00 Lund, Sweden
| | - Håkan Pettersson
- Solid State Physics and NanoLund, Lund University, Box 118, SE-221 00 Lund, Sweden
- School of Information Technology, Halmstad University, Box 823, SE-301 18 Halmstad, Sweden
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3
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Jeong HW, Ajay A, Döblinger M, Sturm S, Gómez Ruiz M, Zell R, Mukhundhan N, Stelzner D, Lähnemann J, Müller-Caspary K, Finley JJ, Koblmüller G. Axial Growth Characteristics of Optically Active InGaAs Nanowire Heterostructures for Integrated Nanophotonic Devices. ACS APPLIED NANO MATERIALS 2024; 7:3032-3041. [PMID: 38357219 PMCID: PMC10863613 DOI: 10.1021/acsanm.3c05392] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/10/2023] [Revised: 12/21/2023] [Accepted: 12/26/2023] [Indexed: 02/16/2024]
Abstract
III-V semiconductor nanowire (NW) heterostructures with axial InGaAs active regions hold large potential for diverse on-chip device applications, including site-selectively integrated quantum light sources, NW lasers with high material gain, as well as resonant tunneling diodes and avalanche photodiodes. Despite various promising efforts toward high-quality single or multiple axial InGaAs heterostacks using noncatalytic growth mechanisms, the important roles of facet-dependent shape evolution, crystal defects, and the applicability to more universal growth schemes have remained elusive. Here, we report the growth of optically active InGaAs axial NW heterostructures via completely catalyst-free, selective-area molecular beam epitaxy directly on silicon (Si) using GaAs(Sb) NW arrays as tunable, high-uniformity growth templates and highlight fundamental relationships between structural, morphological, and optical properties of the InGaAs region. Structural, compositional, and 3D-tomographic characterizations affirm the desired directional growth along the NW axis with no radial growth observed. Clearly distinct luminescence from the InGaAs active region is demonstrated, where tunable array-geometry parameters and In content up to 20% are further investigated. Based on the underlying twin-induced growth mode, we further describe the facet-dependent shape and interface evolution of the InGaAs segment and its direct correlation with emission energy.
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Affiliation(s)
- Hyowon W. Jeong
- Walter
Schottky Institute, TUM School of Natural Sciences, Technical University of Munich, 85748 Garching bei München, Germany
| | - Akhil Ajay
- Walter
Schottky Institute, TUM School of Natural Sciences, Technical University of Munich, 85748 Garching bei München, Germany
| | - Markus Döblinger
- Department
of Chemistry and Center for NanoScience, Ludwig-Maximilians-Universität München, 81377 Munich, Germany
| | - Sebastian Sturm
- Department
of Chemistry and Center for NanoScience, Ludwig-Maximilians-Universität München, 81377 Munich, Germany
| | - Mikel Gómez Ruiz
- Paul-Drude-Institute
for Solid State Electronics, Leibniz-Institut
Im Forschungsverbund Berlin e.V., 10117 Berlin, Germany
| | - Richard Zell
- Department
of Chemistry and Center for NanoScience, Ludwig-Maximilians-Universität München, 81377 Munich, Germany
| | - Nitin Mukhundhan
- Walter
Schottky Institute, TUM School of Natural Sciences, Technical University of Munich, 85748 Garching bei München, Germany
| | - Daniel Stelzner
- Walter
Schottky Institute, TUM School of Natural Sciences, Technical University of Munich, 85748 Garching bei München, Germany
| | - Jonas Lähnemann
- Paul-Drude-Institute
for Solid State Electronics, Leibniz-Institut
Im Forschungsverbund Berlin e.V., 10117 Berlin, Germany
| | - Knut Müller-Caspary
- Department
of Chemistry and Center for NanoScience, Ludwig-Maximilians-Universität München, 81377 Munich, Germany
| | - Jonathan J. Finley
- Walter
Schottky Institute, TUM School of Natural Sciences, Technical University of Munich, 85748 Garching bei München, Germany
| | - Gregor Koblmüller
- Walter
Schottky Institute, TUM School of Natural Sciences, Technical University of Munich, 85748 Garching bei München, Germany
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Han D, Liu Q, Zhang Q, Ji J, Sang S, Xu B. Synthesis of highly crystalline black phosphorus thin films on GaN. NANOSCALE 2020; 12:24429-24436. [PMID: 33300892 DOI: 10.1039/d0nr06764d] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Black phosphorus (BP) has recently garnered significant attention due to its specific physical properties. At present, high-quality few-layer and thin-film BP is obtained principally by mechanical exfoliation, restricting its device applications in the future. Here, a facile, direct synthesis of highly crystalline thin-film BP on GaN(001) substrates is achieved by conversion of red phosphorus to BP under atmospheric pressure. The synthesized ≈100-500 nm thick BP thin films with a length ranging from 4 to 15 μm can maintain long-term stability with no sign of oxidation after 5 months of exposure to ambient conditions, as indicated by energy dispersive spectroscopy (EDS). Cross-sectional spherical aberration correction transmission electron microscopy (STEM) analysis of the entire thin-film BP sample did not show any aggregation nucleation through the selected sample. The interface of the BP/GaN heterostructure is atomically sharp, which is very critical for high-performance device fabrication using a direct step in the future. And it is worth noting that there are fluctuations of a few atoms on the surface of GaN. Moreover, using first-principles approaches, here we establish a novel kinetic pathway for fabricating thin-film BP via epitaxial growth. The step of fluctuations with a few atoms on the GaN surface are first preferentially covered by P adatoms, then P adatoms cover the remaining part. Once formed, such a structure of thin-film BP is stable, as tested using EDS and STEM. Combining the results of the experiment and simulation, it can be revealed that the P adatom on undulatory GaN is sufficiently mobile and the undulating surface of GaN plays a major role in forming high-quality thin-films of BP. The preferentially covered nearby step growth mechanism discovered here may enable the mass production of high-quality thin-film BP, and could also be instrumental in achieving the epitaxial growth of thin-film BP on GaN and other 2D materials.
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Affiliation(s)
- Dan Han
- MicroNano System Research Center, Key Lab of Advanced Transducers and Intelligent Control System of the Ministry of Education & College of Information Engineering, Taiyuan University of Technology, Jinzhong 030600, China.
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Spies M, Sadre Momtaz Z, Lähnemann J, Anh Luong M, Fernandez B, Fournier T, Monroy E, I den Hertog M. Correlated and in-situ electrical transmission electron microscopy studies and related membrane-chip fabrication. NANOTECHNOLOGY 2020; 31:472001. [PMID: 32503014 DOI: 10.1088/1361-6528/ab99f0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Understanding the interplay between the structure, composition and opto-electronic properties of semiconductor nano-objects requires combining transmission electron microscopy (TEM) based techniques with electrical and optical measurements on the very same specimen. Recent developments in TEM technologies allow not only the identification and in-situ electrical characterization of a particular object, but also the direct visualization of its modification in-situ by techniques such as Joule heating. Over the past years, we have carried out a number of studies in these fields that are reviewed in this contribution. In particular, we discuss here i) correlated studies where the same unique object is characterized electro-optically and by TEM, ii) in-situ Joule heating studies where a solid-state metal-semiconductor reaction is monitored in the TEM, and iii) in-situ biasing studies to better understand the electrical properties of contacted single nanowires. In addition, we provide detailed fabrication steps for the silicon nitride membrane-chips crucial to these correlated and in-situ measurements.
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6
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Brubaker MD, Roshko A, Berweger S, Blanchard PT, Little CAE, Harvey TE, Sanford NA, Bertness KA. Crystallographic polarity measurements in two-terminal GaN nanowire devices by lateral piezoresponse force microscopy. NANOTECHNOLOGY 2020; 31:424002. [PMID: 32580185 DOI: 10.1088/1361-6528/ab9fb2] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Lateral piezoresponse force microscopy (L-PFM) is demonstrated as a reliable method for determining the crystallographic polarity of individual, dispersed GaN nanowires that were functional components in electrical test structures. In contrast to PFM measurements of vertically oriented (as-grown) nanowires, where a biased probe tip couples to out-of-plane deformations through the d33 piezoelectic coefficient, the L-PFM measurements in this study were implemented on horizontally oriented nanowires that coupled to shear deformations through the d15 coefficient. L-PFM phase-polarity relationships were determined experimentally using a bulk m-plane GaN sample with a known [0001] direction and further indicated that the sign of the d15 piezoelectric coefficient was negative. L-PFM phase images successfully revealed the in-plane [0001] orientation of self-assembed GaN nanowires as part of a growth polarity study and results were validated against scanning transmission electron microscopy lattice images. Combined characterization of electrical properties and crystallographic polarity was also implemented for two-terminal GaN/Al0.1Ga0.9N/GaN nanowires devices, demonstrating L-PFM measurements as a viable tool for assessing correlations between device rectification and polarization-induced band bending.
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Affiliation(s)
- Matt D Brubaker
- Physical Measurement Laboratory, National Institute of Standards and Technology, Boulder, CO, United States of America
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7
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Johar MA, Kim T, Song HG, Waseem A, Kang JH, Hassan MA, Bagal IV, Cho YH, Ryu SW. Three-dimensional hierarchical semi-polar GaN/InGaN MQW coaxial nanowires on a patterned Si nanowire template. NANOSCALE ADVANCES 2020; 2:1654-1665. [PMID: 36132313 PMCID: PMC9417695 DOI: 10.1039/d0na00115e] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/11/2020] [Accepted: 03/12/2020] [Indexed: 05/30/2023]
Abstract
We have demonstrated for the first time the hybrid development of next-generation 3-D hierarchical GaN/InGaN multiple-quantum-well nanowires on a patterned Si nanowire-template. The patterned Si nanowire-template is fabricated using metal-assisted chemical-etching, and the conformal growth of the GaN/InGaN multiple-quantum-well (MQW) coaxial nanowires is conducted using metal-organic-chemical-vapor-deposition by the two-step growth approach of vapor-liquid-solid for the GaN core and vapor-solid for the GaN/InGaN MQW shells. The growth directions of the GaN nanowires are confirmed by transmission electron microscopy and selected area electron diffraction patterns. The emission of the GaN/InGaN MQW nanowire is tuned from 440 nm to 505 nm by increasing the InGaN quantum-well thickness. The carrier dynamics were evaluated by performing temperature-dependent time-resolved photoluminescence measurement, and the radiative lifetime of photogenerated electron-hole pairs was found to range from 30 to 35 ps. A very high IQE of 56% was measured due to the suppressed quantum-confined Stark effect which was enabled by the semi-polar growth facet of the GaN/InGaN MQWs. The demonstration of the growth of the hybrid 3-D hierarchical GaN/InGaN MQW nanowires provides a seamless platform for a broad range of multifunctional optical and electronic applications.
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Affiliation(s)
- Muhammad Ali Johar
- Department of Physics, Chonnam National University Gwangju 61186 Republic of Korea
| | - Taeyun Kim
- Department of Physics, Chonnam National University Gwangju 61186 Republic of Korea
| | - Hyun-Gyu Song
- Department of Physics, Korea Advanced Institute of Science and Technology Daejeon 34141 Republic of Korea
| | - Aadil Waseem
- Department of Physics, Chonnam National University Gwangju 61186 Republic of Korea
| | - Jin-Ho Kang
- Department of Physics, Chonnam National University Gwangju 61186 Republic of Korea
- Department of Electrical Engineering, Yale University New Haven CT USA
| | - Mostafa Afifi Hassan
- Department of Physics, Chonnam National University Gwangju 61186 Republic of Korea
| | - Indrajit V Bagal
- Department of Physics, Chonnam National University Gwangju 61186 Republic of Korea
| | - Yong-Hoon Cho
- Department of Physics, Korea Advanced Institute of Science and Technology Daejeon 34141 Republic of Korea
| | - Sang-Wan Ryu
- Department of Physics, Chonnam National University Gwangju 61186 Republic of Korea
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8
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Liu L, Xia S, Diao Y, Lu F, Tian J. Enhancement of photoemission capability and electron collection efficiency of field-assisted GaN nanowire array photocathode. NANOTECHNOLOGY 2020; 31:025201. [PMID: 31539893 DOI: 10.1088/1361-6528/ab468a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
GaN has interesting prospects in applications for spectrum-tunable solid-state devices with photoelectric conversion function. Similarly, single nanowires or nanowire arrays (NWAs) proceed to exhibit good photon absorbance and photoemission characteristics as vacuum devices based on the external photoelectric effect. However, the collection of photoelectrons emitted from a nanowire surface has become the greatest impediment to the progress of GaN NWAs photocathodes. In this study, a field-assisted GaN NWA photocathode is proposed. The photoemission efficiency and electron collection efficiency of the field-assisted GaN NWA photocathode are derived. The results suggest that the external field can effectively enhance the photoemission capacity and electron collection efficiency of the photocathode. Based on the theoretical model, the structural parameters of NWAs and the field intensity are optimized. When the field intensity is 1 V μm-1, the collected photocurrent of the GaN NWA photocathode reaches a maximum. For NWAs with an aspect ratio of 1:1, the optimal incident angle of light is 70°. This study provides a theoretical guide for the incorporation of an external field in a GaN NWA photocathode with the purpose of enhancing photoemission and electron collection capacity.
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Affiliation(s)
- Lei Liu
- Department of Optoelectronic Technology, School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
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9
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Wang Q, Yuan G, Zhao S, Liu W, Liu Z, Wang J, Li J. Metal-assisted photochemical etching of GaN nanowires: The role of metal distribution. Electrochem commun 2019. [DOI: 10.1016/j.elecom.2019.05.005] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/26/2022] Open
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10
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Lähnemann J, Browne DA, Ajay A, Jeannin M, Vasanelli A, Thomassin JL, Bellet-Amalric E, Monroy E. Near- and mid-infrared intersubband absorption in top-down GaN/AlN nano- and micro-pillars. NANOTECHNOLOGY 2019; 30:054002. [PMID: 30500783 DOI: 10.1088/1361-6528/aaef72] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
We present a systematic study of top-down processed GaN/AlN heterostructures for intersubband optoelectronic applications. Samples containing quantum well superlattices that display either near- or mid-infrared intersubband absorption were etched into nano- and micro-pillar arrays in an inductively coupled plasma. We investigate the influence of this process on the structure and strain-state, on the interband emission and on the intersubband absorption. Notably, for pillar spacings significantly smaller (≤1/3) than the intersubband wavelength, the magnitude of the intersubband absorption is not reduced even when 90% of the material is etched away and a similar linewidth is obtained. The same holds for the interband emission. In contrast, for pillar spacings on the order of the intersubband absorption wavelength, the intersubband absorption is masked by refraction effects and photonic crystal modes. The presented results are a first step towards micro- and nano-structured group-III nitride devices relying on intersubband transitions.
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Affiliation(s)
- Jonas Lähnemann
- Université Grenoble-Alpes, CEA, INAC, PHELIQS, 17 av. des Martyrs, F-38000, Grenoble, France. Paul-Drude-Institut für Festkörperelektronik, Leibniz Institut im Forschugnsverbund Berlin e.V., Hausvogteiplatz 5-7, D-10117, Berlin, Germany
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11
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Coulon PM, Damilano B, Alloing B, Chausse P, Walde S, Enslin J, Armstrong R, Vézian S, Hagedorn S, Wernicke T, Massies J, Zúñiga‐Pérez J, Weyers M, Kneissl M, Shields PA. Displacement Talbot lithography for nano-engineering of III-nitride materials. MICROSYSTEMS & NANOENGINEERING 2019; 5:52. [PMID: 31814992 PMCID: PMC6885515 DOI: 10.1038/s41378-019-0101-2] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/03/2019] [Revised: 08/16/2019] [Accepted: 08/21/2019] [Indexed: 05/05/2023]
Abstract
Nano-engineering III-nitride semiconductors offers a route to further control the optoelectronic properties, enabling novel functionalities and applications. Although a variety of lithography techniques are currently employed to nano-engineer these materials, the scalability and cost of the fabrication process can be an obstacle for large-scale manufacturing. In this paper, we report on the use of a fast, robust and flexible emerging patterning technique called Displacement Talbot lithography (DTL), to successfully nano-engineer III-nitride materials. DTL, along with its novel and unique combination with a lateral planar displacement (D2TL), allow the fabrication of a variety of periodic nanopatterns with a broad range of filling factors such as nanoholes, nanodots, nanorings and nanolines; all these features being achievable from one single mask. To illustrate the enormous possibilities opened by DTL/D2TL, dielectric and metal masks with a number of nanopatterns have been generated, allowing for the selective area growth of InGaN/GaN core-shell nanorods, the top-down plasma etching of III-nitride nanostructures, the top-down sublimation of GaN nanostructures, the hybrid top-down/bottom-up growth of AlN nanorods and GaN nanotubes, and the fabrication of nanopatterned sapphire substrates for AlN growth. Compared with their planar counterparts, these 3D nanostructures enable the reduction or filtering of structural defects and/or the enhancement of the light extraction, therefore improving the efficiency of the final device. These results, achieved on a wafer scale via DTL and upscalable to larger surfaces, have the potential to unlock the manufacturing of nano-engineered III-nitride materials.
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Affiliation(s)
- Pierre-Marie Coulon
- Department of Electrical & Electronic Engineering, University of Bath, Bath, BA2 7AY UK
| | - Benjamin Damilano
- Université Côte d’Azur, CNRS, CRHEA, rue B. Gregory, 06560 Valbonne, France
| | - Blandine Alloing
- Université Côte d’Azur, CNRS, CRHEA, rue B. Gregory, 06560 Valbonne, France
| | - Pierre Chausse
- Department of Electrical & Electronic Engineering, University of Bath, Bath, BA2 7AY UK
| | - Sebastian Walde
- Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
| | - Johannes Enslin
- Technische Universität Berlin, Institute of Solid State Physics, 10623 Berlin, Germany
| | - Robert Armstrong
- Department of Electrical & Electronic Engineering, University of Bath, Bath, BA2 7AY UK
| | - Stéphane Vézian
- Université Côte d’Azur, CNRS, CRHEA, rue B. Gregory, 06560 Valbonne, France
| | - Sylvia Hagedorn
- Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
| | - Tim Wernicke
- Technische Universität Berlin, Institute of Solid State Physics, 10623 Berlin, Germany
| | - Jean Massies
- Université Côte d’Azur, CNRS, CRHEA, rue B. Gregory, 06560 Valbonne, France
| | - Jesus Zúñiga‐Pérez
- Université Côte d’Azur, CNRS, CRHEA, rue B. Gregory, 06560 Valbonne, France
| | - Markus Weyers
- Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
| | - Michael Kneissl
- Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
- Technische Universität Berlin, Institute of Solid State Physics, 10623 Berlin, Germany
| | - Philip A. Shields
- Department of Electrical & Electronic Engineering, University of Bath, Bath, BA2 7AY UK
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12
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III-Nitride Short Period Superlattices for Deep UV Light Emitters. APPLIED SCIENCES-BASEL 2018. [DOI: 10.3390/app8122362] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
Abstract
III-Nitride short period superlattices (SPSLs), whose period does not exceed ~2 nm (~8 monolayers), have a few unique properties allowing engineering of light-emitting devices emitting in deep UV range of wavelengths with significant reduction of dislocation density in the active layer. Such SPSLs can be grown using both molecular beam epitaxy and metal organic chemical vapor deposition approaches. Of the two growth methods, the former is discussed in more detail in this review. The electrical and optical properties of such SPSLs, as well as the design and fabrication of deep UV light-emitting devices based on these materials, are described and discussed.
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Han S, Lee SK, Choi I, Song J, Lee CR, Kim K, Ryu MY, Jeong KU, Kim JS. Highly Efficient and Flexible Photosensors with GaN Nanowires Horizontally Embedded in a Graphene Sandwich Channel. ACS APPLIED MATERIALS & INTERFACES 2018; 10:38173-38182. [PMID: 30360044 DOI: 10.1021/acsami.8b11229] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
In this study, we report highly efficient and flexible photosensors with GaN nanowires (NWs) horizontally embedded in a graphene sandwich structure fabricated on polyethylene terephthalate. GaN NWs and the graphene sandwich structure are used as light-absorbing media and the channel for carrier movement, respectively. To form uniform high-quality crystalline GaN NWs on Si(111) substrates, the initial nucleation behavior of the NWs was manipulated by applying the new growth technique of Ga predeposition. High-resolution transmission electron microscopic images obtained along the vertical direction of GaN NWs showed that stacking faults, typically observed in Si-based (In,Ga)As NWs, were rare. Consequently, narrow and strong optical emission was observed from the GaN NWs at wavelengths of 365.12 nm at 300 K. The photocurrent and photoresponsivity of the flexible photosensor with 802 nm long GaN NWs horizontally embedded in the graphene sandwich channel were measured as 9.17 mA and 91.70 A/W, respectively, at the light intensity of 100 mW/cm2, which are much higher than those previously reported. The high optical-to-electrical conversion characteristics of our flexible photosensors are attributed to the increase in the effective interface between the light-absorbing media and the carrier channel by the horizontal distribution of the GaN NWs within the graphene sandwich structure. After 200 cyclic-bending test of the GaN NW photosensor at the strain of 3%, the photoresponsivity under strain was measured as 89.04 A/W at 100 mW/cm2, corresponding to 97.1% of the photoresponsivity obtained before bending. The photosensor proposed in this study is relatively simple in device design and fabrication, and it requires no sophisticated nanostructural design to minimize the resistance to metal contacts.
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Affiliation(s)
| | - Seoung-Ki Lee
- Applied Quantum Composites Research Center , Korea Institute of Science and Technology , Wanju 55324 , South Korea
| | | | | | | | - Kangmin Kim
- Applied Quantum Composites Research Center , Korea Institute of Science and Technology , Wanju 55324 , South Korea
| | - Mee-Yi Ryu
- Department of Physics , Kangwon National University , Chuncheon 24341 , South Korea
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Ajay A, Blasco R, Polaczyński J, Spies M, Den Hertog MI, Monroy E. Intersubband absorption in GaN nanowire heterostructures at mid-infrared wavelengths. NANOTECHNOLOGY 2018; 29:385201. [PMID: 29947335 DOI: 10.1088/1361-6528/aacf55] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
In this paper, we study intersubband characteristics of GaN/AlN and GaN/Al0.4Ga0.6N heterostructures in GaN nanowires structurally designed to absorb in the mid-infrared wavelength region. Increasing the GaN well width from 1.5 to 5.7 nm leads to a red shift of the intersubband absorption from 1.4 to 3.4 μm. The red shift in larger quantum wells is amplified by the fact that one of the GaN/AlN heterointerfaces (corresponding to the growth of GaN on AlN) is not sharp but rather a graded alloy extending around 1.5-2 nm. Using AlGaN instead of AlN for the same barrier dimensions, we observe the effects of reduced polarization, which blue shifts the band-to-band transitions and red shifts the intersubband transitions. In heavily doped GaN/AlGaN nanowires, a broad absorption band is observed in the 4.5-6.4 μm spectral region.
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Affiliation(s)
- A Ajay
- Univ. Grenoble-Alpes, CEA-INAC-PHELIQS, 17 av. des Martyrs, F-38000 Grenoble, France
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