Ultracompact Silicon-Conductive Oxide Nanocavity Modulator with 0.02 Lambda-Cubic Active Volume

Multi-band reprogrammable phase-change metasurface spectral filters for on-chip spectrometers

Active optical metasurfaces provide a platform for dynamic and real-time manipulation of light at subwavelength scales. However, most active metasurfaces are unable to simultaneously possess a wide wavelength tuning range and narrow resonance peaks, thereby limiting further advancements in the field of high-precision sensing or detection. In the paper, we proposed a reprogrammable active metasurface that employs the non-volatile phase change material Ge2Sb2Te5 and demonstrated its excellent performance in on-chip spectrometer. The active metasurfaces support magnetic modes and feature Friedrich-Wintgen quasi bound states in the continuum, capable of achieving multi-resonant near-perfect absorption, a multilevel tuning range, and narrowband performance in the infrared band. Meanwhile, we numerically investigated the coupling phenomenon and the intrinsic relationship between different resonance modes under various structural parameters. Furthermore, using the active metasurfaces as tunable filters and combined with compressive sensing algorithms, we successfully reconstructed various types of spectral signals with an average fidelity rate exceeding 0.99, utilizing only 51 measurements with a single nanostructure. A spectral resolution of 0.5 nm at a center wavelength 2.538 µm is predicted when the crystallization fractions of GST change from 0 to 20%. This work has promising potential in on-site matter inspection and point-of-care (POC) testing.

Sub-volt high-speed silicon MOSCAP microring modulator driven by high-mobility conductive oxide

Silicon microring modulator plays a critical role in energy-efficient optical interconnect and optical computing owing to its ultra-compact footprint and capability for on-chip wavelength-division multiplexing. However, existing silicon microring modulators usually require more than 2 V of driving voltage (Vpp), which is limited by both material properties and device structures. Here, we present a metal-oxide-semiconductor capacitor microring modulator through heterogeneous integration between silicon photonics and titanium-doped indium oxide, which is a high-mobility transparent conductive oxide (TCO) with a strong plasma dispersion effect. The device is co-fabricated by Intel's photonics fab and our in-house TCO patterning processes, which exhibits a high modulation efficiency of 117 pm/V and consequently can be driven by a very low Vpp of 0.8 V. At a 11 GHz modulation bandwidth where the modulator is limited by the RC bandwidth, we obtained 25 Gb/s clear eye diagrams with energy efficiency of 53 fJ/bit.

ITO film stack engineering for low-loss silicon optical modulators

The Indium Tin Oxide (ITO) platform is one of the promising solutions for state-of-the-art integrated optical modulators towards low-loss silicon photonics applications. One of the key challenges on this way is to optimize ITO-based thin films stacks for electro-optic modulators with both high extinction ratio and low insertion loss. In this paper we demonstrate the e-beam evaporation technology of 20 nm-thick ITO films with low extinction coefficient of 0.14 (N_c = 3.7·10²⁰ cm⁻³) at 1550 nm wavelength and wide range of carrier concentrations (from 1 to 10 × 10²⁰ cm⁻³). We investigate ITO films with amorphous, heterogeneously crystalline, homogeneously crystalline with hidden coarse grains and pronounced coarsely crystalline structure to achieve the desired optical and electrical parameters. Here we report the mechanism of oxygen migration in ITO film crystallization based on observed morphological features under low-energy growth conditions. Finally, we experimentally compare the current–voltage and optical characteristics of three electro-optic active elements based on ITO film stacks and reach strong ITO dielectric permittivity variation induced by charge accumulation/depletion (Δn = 0.199, Δk = 0.240 at λ = 1550 nm under ± 16 V). Our simulations and experimental results demonstrate the unique potential to create integrated GHz-range electro-optical modulators with sub-dB losses.

Optical Interconnects Finally Seeing the Light in Silicon Photonics: Past the Hype

Electrical interconnects are becoming a bottleneck in the way towards meeting future performance requirements of integrated circuits. Moore's law, which observes the doubling of the number of transistors in integrated circuits every couple of years, can no longer be maintained due to reaching a physical barrier for scaling down the transistor's size lower than 5 nm. Heading towards multi-core and many-core chips, to mitigate such a barrier and maintain Moore's law in the future, is the solution being pursued today. However, such distributed nature requires a large interconnect network that is found to consume more than 80% of the microprocessor power. Optical interconnects represent one of the viable future alternatives that can resolve many of the challenges faced by electrical interconnects. However, reaching a maturity level in optical interconnects that would allow for the transition from electrical to optical interconnects for intra-chip and inter-chip communication is still facing several challenges. A review study is required to compare the recent developments in the optical interconnects with the performance requirements needed to reach the required maturity level for the transition to happen. This review paper dissects the optical interconnect system into its components and explains the foundational concepts behind the various passive and active components along with the performance metrics. The performance of different types of on-chip lasers, grating and edge couplers, modulators, and photodetectors are compared. The potential of a slot waveguide is investigated as a new foundation since it allows for guiding and confining light into low index regions of a few tens of nanometers in cross-section. Additionally, it can be tuned to optimize transmissions over 90° bends. Hence, high-density opto-electronic integrated circuits with optical interconnects reaching the dimensions of their electrical counterparts are becoming a possibility. The latest complete optical interconnect systems realized so far are reviewed as well.

Ultra-low loss hybrid ITO/Si thermo-optic phase shifter with optimized power consumption

Typically, materials with large optical losses such as metals are used as microheaters for silicon based thermo-optic phase shifters. Consequently, the heater must be placed far from the waveguide, which could come at the expense of the phase shifter performance. Reducing the gap between the waveguide and the heater allows reducing the power consumption or increasing the switching speed. In this work, we propose an ultra-low loss microheater for thermo-optic tuning by using a CMOS-compatible transparent conducting oxide such as indium tin oxide (ITO) with the aim of drastically reducing the gap. Using finite element method simulations, ITO and Ti based heaters are compared for different cladding configurations and TE and TM polarizations. Furthermore, the proposed ITO based microheaters have also been fabricated using the optimum gap and cladding configuration. Experimental results show power consumption to achieve a π phase shift of 10 mW and switching time of a few microseconds for a 50 µm long ITO heater. The obtained results demonstrate the potential of using ITO as an ultra-low loss microheater for high performance silicon thermo-optic tuning and open an alternative way for enabling the large-scale integration of phase shifters required in emerging integrated photonic applications.

Spatially resolved electrochemistry enabled by thin-film optical interference

Electrochemical reactions occurring on the local surface can be spatially resolved by successive interferometric imaging of the nanochannel membrane coated electrode.

Non-volatile epsilon-near-zero readout memory

The lack of memory effect of silicon makes it unfeasible to store electronic data in photonics. Here we propose a non-volatile readout photonic memory, which is electronically written/erased and optically read. The memory utilizes indium tin oxide as a floating gate and exploits its epsilon-near-zero regime and electro-optic activity. Extinction ratios greater than 10 dB in a bandwidth of 100 nm for a 5 μm long memory are obtained. Furthermore, power consumption in the order of microwatts with retention times of about a decade have been predicted. The proposed structure opens a pathway for developing highly integrated electro-optic devices such as memory banks.

Towards integrated metatronics: a holistic approach on precise optical and electrical properties of Indium Tin Oxide

The class of transparent conductive oxides includes the material indium tin oxide (ITO) and has become a widely used material of modern every-day life such as in touch screens of smart phones and watches, but also used as an optically transparent low electrically-resistive contract in the photovoltaics industry. More recently ITO has shown epsilon-near-zero (ENZ) behavior in the telecommunication frequency band enabling both strong index modulation and other optically-exotic applications such as metatronics. However, the ability to precisely obtain targeted electrical and optical material properties in ITO is still challenging due to complex intrinsic effects in ITO and as such no integrated metatronic platform has been demonstrated to-date. Here we deliver an extensive and accurate description process parameter of RF-sputtering, showing a holistic control of the quality of ITO thin films in the visible and particularly near-infrared spectral region. We are able to custom-engineer the ENZ point across the telecommunication band by explicitly controlling the sputtering process conditions. Exploiting this control, we design a functional sub-wavelength-scale filter based on lumped circuit-elements, towards the realization of integrated metatronic devices and circuits.

Broadband optical waveguide modulators based on strongly coupled hybrid graphene and metal nanoribbons for near-infrared applications

In this paper, we numerically demonstrate a variety of broadband optical waveguide modulators based on the hybrid surface plasmon polariton (HSPP) concept for near-infrared applications. The modulator is composed of strongly coupled double-layer graphene and double rectangle cross-sectional metal nanoribbons separated by three Al2O3 spacers, which are interpolated in a SiO2 waveguide. Owing to the unique strong coupling of HSPPs between metal nanoribbons, the subwavelength confinement, the in-plane electric field component, the light-graphene interaction, and the modulation effect of the modulator are significantly enhanced. The results show the proposed modulator achieves an outstanding performance with a modulation depth (MD) over 2.3 dB μm-1 and a small normalized mode area of ∼10-5 in a wide range of wavelength from 1.3 to 1.8 μm. By optimizing the separation of the double rectangle metal nanoribbons at the telecommunication wavelength of 1.55 μm, the modulator exhibits a high MD of 3.12 dB μm-1, a small footprint of 1.8 μm2, an ultra-wide 3 dB modulation bandwidth of 380.23 GHz, and an ultra-low energy consumption of 29.39 fJ per bit. Furthermore, we also demonstrate a modulator based on two properly apart semicircular (rhombus) metal nanoribbons with a drastically enhanced MD of 11.3 (6.32) dB μm-1 at 1.55 μm. Benefitting from the strong subwavelength confinement and excellent broadband modulation performance, the proposed optical waveguide modulators offer a significant potential to realize various long-wave near-infrared integrated modulators, interconnects and optoelectronic devices.

Intrinsic chirp analysis of a single dual-drive silicon PAM-4 optical modulator

We propose an analytical model to investigate the intrinsic frequency chirp with the method of 4-level pulse-amplitude-modulation (PAM-4) optical modulation by driving a single dual-drive silicon optical modulator. With the analytical model, we calculate the chirp parameters of this PAM-4 generation numerically. The intensity and phase of output signal changes with the PAM levels' switching, which results in the frequency chirp. We find that the modulator operating at different quadrature points (Q_- and Q₊) will have different frequency chirp behavior. The Q_- modulator has mainly negative chirp parameters while Q₊ modulator has mainly positive chirp parameters. We characterize the eye diagrams and BER of the optical PAM-4 signals generated by the Q_- and Q₊ modulator at the modulation rates of 25 Gbaud and 32 Gbaud, respectively, for both back-to-back and 2 km transmission in single mode fiber. The BER results show the Q_- modulator has a small power penalty attribute to the positive fiber dispersion, which is suited for the short-distance transmission in data center application.

One-volt silicon photonic crystal nanocavity modulator with indium oxide gate

The ever-increasing global network traffic requires a high level of seamless integration between optical interconnect systems and complementary metal-oxide-semiconductor (CMOS) circuits. Therefore, it brings stringent requirements for future electro-optic (E-O) modulators, which should be ultracompact, energy efficient, high bandwidth, and in the meanwhile, able to be directly driven by the state-of-the-art CMOS circuits. In this Letter, we report a low-voltage silicon photonic crystal nanocavity modulator using an optimized metal-oxide-semiconductor (MOS) capacitor consisting of an In₂O₃/HfO₂/p-Si stacked nanostructure. The strong light-matter interaction from the accumulated free carriers with the nanocavity resonant mode results in holistic improvement in device performance, including a high tuning efficiency of 250 pm/V and an average modulation strength of 4 dB/V with a moderate Q factor of ∼3700 and insertion loss of ∼6  dB using an ultrashort electrode length of only 350 nm. With 1 V driving voltage over a capacitive loading of only 13 fF, the silicon photonic nanocavity modulator can achieve more than 3 dB extinction ratio with energy consumption of only 3 fJ/bit. Such a low-voltage, low-capacitance silicon nanocavity modulator provides the feasibility to be directly driven by a CMOS logic gate for single-chip integration.

Flexible and Broad-Spectral Hybrid Optical Modulation Transistor Based on a Polymer-Silver Nanoparticle Blend

The light-matter interplay on a soft substrate is critically important for novel optoelectronic applications such as soft robotics, human-machine interfaces, and wearable devices. Here, we for the first time report a flexible and efficiency-enhanced hybrid optical modulation transistor (h-OMT) in the ultraviolet-infrared spectral range by blending a polymer with silver nanoparticles (AgNPs). The h-OMT device exhibits a unipolar transport and an ultrahigh on-off ratio of ∼4.8 × 10⁶ in a small voltage range of ∼2 V. Using charge modulation reflection spectroscopy, we demonstrate that the h-OMT device shows a broad-spectral response from 400 to 2000 nm and maximum optical modulation of ∼15% at λ = 785 nm, 6-fold higher magnitude than that of the device without AgNPs. Furthermore, the incorporation of AgNPs enhances the extinction ratio by 4-fold magnitude without any complex geometry designs. We find that the performance improvement relies on the AgNP-induced electron trap states and electrochemical dopings in the polymer. Importantly, the device exhibits pronounced mechanical flexibility, and the optical modulation is kept down to a bending radius of 0.5 mm. Our data provide the possibility of organic materials for constructing novel optoelectronic systems in the future.