Giant Mechano-Optoelectronic Effect in an Atomically Thin Semiconductor

Layer-number and strain effects on the structural and electronic properties of PtSe2material

Bandgap engineering of low-dimensional materials forms a robust basis for advancements in optoelectronic technologies. Platinum diselenide (PtSe2) material exhibits a transition from semi-metal to semiconductor (SM-SC) when going from bulk to monolayer. In this work, density functional theory (DFT) with various van der Waals (vdW) corrections has been tested to study the effect of the layer-number on the structural and electronic properties of the PtSe2material. The considered vdW corrections gave different results regarding the number of layers at which the SM-SC transition occurs. This variation is due to the different interlayer distances found for each correction, revealing the sensitivity of the bandgap to this distance in addition to the layer number. In fact, the bandgap increases with the increasing of the interlayer distance, due to the energy shift of conduction and valence bands dominated by Se-pzorbitals. According to the comparison with the available experimental data, the vdW corrections vdW-DF and rVV10 gave the most accurate results. Moreover, the control of the interlayer distance via vertical compressive strain led to the bandgap tuning of semiconductor PtSe2BL. Indeed, a semi-metal character of PtSe2BL can be obtained under 17% vertical strain. Our work shows a deep understanding of the correlation between the structural and electronic properties, and thus a possibility to tune the bandgap by strain means.

Direct Measurement of the Thermal Expansion Coefficient of Epitaxial WSe2 by Four-Dimensional Scanning Transmission Electron Microscopy

Current reports of thermal expansion coefficients (TEC) of two-dimensional (2D) materials show large discrepancies that span orders of magnitude. Determining the TEC of any 2D material remains difficult due to approaches involving indirect measurement of samples that are atomically thin and optically transparent. We demonstrate a methodology to address this discrepancy and directly measure TEC of nominally monolayer epitaxial WSe2 using four-dimensional scanning transmission electron microscopy (4D-STEM). Experimentally, WSe2 from metal-organic chemical vapor deposition (MOCVD) was heated through a temperature range of 18-564 °C using a barrel-style heating sample holder to observe temperature-induced structural changes without additional alterations or destruction of the sample. By combining 4D-STEM measurements with quantitative structural analysis, the thermal expansion coefficient of nominally monolayer polycrystalline epitaxial 2D WSe2 was determined to be (3.5 ± 0.9) × 10-6 K-1 and (5.7 ± 2) × 10-5 K-1 for the in- and out-of-plane TEC, respectively, and (3.6 ± 0.2) × 10-5 K-1 for the unit cell volume TEC, in good agreement with historically determined values for bulk crystals.

Biaxial strain tuned upconversion photoluminescence of monolayer WS2

Monolayer tungsten disulfide (1L-WS2) is a direct bandgap atomic-layered semiconductor material with strain tunable optical and optoelectronic properties among the monolayer transition metal dichalcogenides (1L-TMDs). Here, we demonstrate biaxial strain tuned upconversion photoluminescence (UPL) from exfoliated 1L-WS2 flakes transferred on a flexible polycarbonate cruciform substrate. When the biaxial strain applied to 1L-WS2 increases from 0 to 0.51%, it is observed that the UPL peak position is redshifted by up to 60 nm/% strain, while the UPL intensity exhibits exponential growth with the upconversion energy difference varying from - 303 to - 120 meV. The measured power dependence of UPL from 1L-WS2 under biaxial strain reveals the one photon involved multiphonon-mediated upconversion mechanism. The demonstrated results provide new opportunities in advancing TMD-based optical upconversion devices for future flexible photonics and optoelectronics.

2D Materials in Flexible Electronics: Recent Advances and Future Prospectives

Flexible electronics have recently gained considerable attention due to their potential to provide new and innovative solutions to a wide range of challenges in various electronic fields. These electronics require specific material properties and performance because they need to be integrated into a variety of surfaces or folded and rolled for newly formatted electronics. Two-dimensional (2D) materials have emerged as promising candidates for flexible electronics due to their unique mechanical, electrical, and optical properties, as well as their compatibility with other materials, enabling the creation of various flexible electronic devices. This article provides a comprehensive review of the progress made in developing flexible electronic devices using 2D materials. In addition, it highlights the key aspects of materials, scalable material production, and device fabrication processes for flexible applications, along with important examples of demonstrations that achieved breakthroughs in various flexible and wearable electronic applications. Finally, we discuss the opportunities, current challenges, potential solutions, and future investigative directions about this field.

Tuning of the electronic and vibrational properties of epitaxial MoS2through He-ion beam modification

Atomically thin transition metal dichalcogenides (TMDs), like MoS₂with high carrier mobilities and tunable electron dispersions, are unique active material candidates for next generation opto-electronic devices. Previous studies on ion irradiation show great potential applications when applied to two-dimensional (2D) materials, yet have been limited to micron size exfoliated flakes or smaller. To demonstrate the scalability of this method for industrial applications, we report the application of relatively low power (50 keV)⁴He⁺ion irradiation towards tuning the optoelectronic properties of an epitaxially grown continuous film of MoS₂at the wafer scale, and demonstrate that precise manipulation of atomistic defects can be achieved in TMD films using ion implanters. The effect of⁴He⁺ion fluence on the PL and Raman signatures of the irradiated film provides new insights into the type and concentration of defects formed in the MoS₂lattice, which are quantified through ion beam analysis. PL and Raman spectroscopy indicate that point defects are generated without causing disruption to the underlying lattice structure of the 2D films and hence, this technique can prove to be an effective way to achieve defect-mediated control over the opto-electronic properties of MoS₂and other 2D materials.

Large-Scale Ultrafast Strain Engineering of CVD-Grown Two-Dimensional Materials on Strain Self-Limited Deformable Nanostructures toward Enhanced Field-Effect Transistors

Strain engineering of 2D materials is capable of tuning the electrical and optical properties of the materials without introducing additional atoms. Here, a method for large-scale ultrafast strain engineering of CVD-grown 2D materials is proposed. Locally nonuniform strains are introduced through the cooperative deformation of materials and metal@metal oxide nanoparticles through cold laser shock. The tensile strain of MoS₂ changes and the band gap decreases after laser shock. The mechanism of the ultrafast straining is investigated by MD simulations. MoS₂ FETs were fabricated, and the field-effect mobility of devices could be increased from 1.9 to 44.5 cm² V^-1 s^-1 by adjusting the strain level of MoS₂. This is currently the maximum value of MoS₂ FETs grown by CVD with SiO₂ as the dielectric. As a large-scale and ultrafast manufacturing method, laser shock provides a universal strategy for large-scale adjustment of 2D material strain, which will help to promote the manufacturing of 2D nanoelectronic devices.

Strain engineering of lateral heterostructures based on group-V enes (As, Sb, Bi) for infrared optoelectronic applications calculated by first principles

In this work, the electronic structure, and optical properties of As/Sb and Sb/Bi lateral heterostructures (LHS) along armchair and zigzag interfaces affected by strain were investigated by density functional theory. The LHSs presented strain-dependent band transformation characteristics and sensitivity features. And a reduction and transition of the bandgap was observed when the As/Sb and Sb/Bi LHS existed under compressive strain. The density of states and the conduction band minimum-valence band maximum characteristics exhibited corresponding changes under the strain. Then a spatial charge-separation phenomenon and strong optical absorption properties in the mid-infrared range can also be observed from calculated results. Theoretical research into As/Sb and Sb/Bi LHSs has laid a solid foundation for As/Sb and Sb/Bi LHS device manufacture.

The band gap of the heterojunction decreases with increasing strain and becomes metallic at larger strains.

Exceptional Elasticity of Microscale Constrained MoS2 Domes

The outstanding mechanical performances of two-dimensional (2D) materials make them appealing for the emerging fields of flextronics and straintronics. However, their manufacturing and integration in 2D crystal-based devices rely on a thorough knowledge of their hardness, elasticity, and interface mechanics. Here, we investigate the elasticity of highly strained monolayer-thick MoS₂ membranes, in the shape of micrometer-sized domes, by atomic force microscopy (AFM)-based nanoindentation experiments. A dome's crushing procedure is performed to induce a local re-adhesion of the dome's membrane to the bulk substrate under the AFM tip's load. It is worth noting that no breakage, damage, or variation in size and shape are recorded in 95% of the crushed domes upon unloading. Furthermore, such a procedure paves the way to address quantitatively the extent of the van der Waals interlayer interaction and adhesion of MoS₂ by studying pull-in instabilities and hysteresis of the loading-unloading cycles. The fundamental role and advantage of using a superimposed dome's constraint are also discussed.

Tuning the physical properties of ultrathin transition-metal dichalcogenides via strain engineering

Transition-metal dichalcogenides (TMDs) have become one of the recent frontiers and focuses in two-dimensional (2D) materials fields thanks to their superior electronic, optical, and photoelectric properties. Triggered by the growing demand for developing nano-electronic devices, strain engineering of ultrathin TMDs has become a hot topic in the scientific community. In recent years, both theoretical and experimental research on the strain engineering of ultrathin TMDs have suggested new opportunities to achieve high-performance ultrathin TMDs based devices. However, recent reviews mainly focus on the experimental progress and the related theoretical research has long been ignored. In this review, we first outline the currently employed approaches for introducing strain in ultrathin TMDs, both their characteristics and advantages are explained in detail. Subsequently, the recent research progress in the modification of lattice and electronic structure, and physical properties of ultrathin TMDs under strain are systematically reviewed from both experimental and theoretical perspectives. Despite much work being done in this filed, reducing the distance of experimental progress from the theoretical prediction remains a great challenge in realizing wide applications of ultrathin TMDs in nano-electronic devices.

Efficient strain modulation of 2D materials via polymer encapsulation

Strain engineering is a promising method to manipulate the electronic and optical properties of two-dimensional (2D) materials. However, with weak van der Waals interaction, severe slippage between 2D material and substrate could dominate the bending or stretching processes, leading to inefficiency strain transfer. To overcome this limitation, we report a simple strain engineering method by encapsulating the monolayer 2D material in the flexible PVA substrate through spin-coating approach. The strong interaction force between spin-coated PVA and 2D material ensures the mechanical strain can be effectively transferred with negligible slippage or decoupling. By applying uniaxial strain to monolayer MoS₂, we observe a higher bandgap modulation up to ~300 meV and a highest modulation rate of ~136 meV/%, which is approximate two times improvement compared to previous results achieved. Moreover, this simple strategy could be well extended to other 2D materials such as WS₂ or WSe₂, leading to enhanced bandgap modulation.

Strain engineering is a promising method to manipulate properties of two-dimensional (2D) materials but slippage between material and substrate makes strain transfer inefficient. Here the authors overcome slipping effects by encapsulating a 2D material in a polymer substrate.

Strain Engineering of 2D Materials: Issues and Opportunities at the Interface

Triggered by the growing needs of developing semiconductor devices at ever-decreasing scales, strain engineering of 2D materials has recently seen a surge of interest. The goal of this principle is to exploit mechanical strain to tune the electronic and photonic performance of 2D materials and to ultimately achieve high-performance 2D-material-based devices. Although strain engineering has been well studied for traditional semiconductor materials and is now routinely used in their manufacturing, recent experiments on strain engineering of 2D materials have shown new opportunities for fundamental physics and exciting applications, along with new challenges, due to the atomic nature of 2D materials. Here, recent advances in the application of mechanical strain into 2D materials are reviewed. These developments are categorized by the deformation modes of the 2D material-substrate system: in-plane mode and out-of-plane mode. Recent state-of-the-art characterization of the interface mechanics for these 2D material-substrate systems is also summarized. These advances highlight how the strain or strain-coupled applications of 2D materials rely on the interfacial properties, essentially shear and adhesion, and finally offer direct guidelines for deterministic design of mechanical strains into 2D materials for ultrathin semiconductor applications.

Unveiling the Interfacial Effects for Enhanced Hydrogen Evolution Reaction on MoS2 /WTe2 Hybrid Structures

Using the MoS₂ -WTe₂ heterostructure as a model system combined with electrochemical microreactors and density function theory calculations, it is shown that heterostructured contacts enhance the hydrogen evolution reaction (HER) activity of monolayer MoS₂ . Two possible mechanisms are suggested to explain this enhancement: efficient charge injection through large-area heterojunctions between MoS₂ and WTe₂ and effective screening of mirror charges due to the semimetallic nature of WTe₂ . The dielectric screening effect is proven minor, probed by measuring the HER activity of monolayer MoS₂ on various support substrates with dielectric constants ranging from 4 to 300. Thus, the enhanced HER is attributed to the increased charge injection into MoS₂ through large-area heterojunctions. Based on this understanding, a MoS₂ /WTe₂ hybrid catalyst is fabricated with an HER overpotential of -140 mV at 10 mA cm^-2 , a Tafel slope of 40 mV dec^-1 , and long stability. These results demonstrate the importance of interfacial design in transition metal dichalcogenide HER catalysts. The microreactor platform presents an unambiguous approach to probe interfacial effects in various electrocatalytic reactions.

Thermal Conductivity Enhancement in MoS_{2} under Extreme Strain

Because of their weak interlayer bonding, van der Waals (vdW) solids are very sensitive to external stimuli such as strain. Experimental studies of strain tuning of thermal properties in vdW solids have not yet been reported. Under ∼9% cross-plane compressive strain created by hydrostatic pressure in a diamond anvil cell, we observed an increase of cross-plane thermal conductivity in bulk MoS_{2} from 3.5 to about 25  W m^{-1} K^{-1}, measured with a picosecond transient thermoreflectance technique. First-principles calculations and coherent phonon spectroscopy experiments reveal that this drastic change arises from the strain-enhanced interlayer interaction, heavily modified phonon dispersions, and decrease in phonon lifetimes due to the unbundling effect along the cross-plane direction. The contribution from the change of electronic thermal conductivity is negligible. Our results suggest possible parallel tuning of structural, thermal, and electrical properties of vdW solids with strain in multiphysics devices.

Isotope Effect in Bilayer WSe2

Isotopes of an element have the same electron number but differ in neutron number and atomic mass. However, due to the thickness-dependent properties in MX₂ (M = Mo, W; X = S, Se, Te) transition metal dichalcogenides (TMDs), the isotopic effect in atomically thin TMDs still remains unclear especially for phonon-assisted indirect excitonic transitions. Here, we report the first observation of the isotope effect on the electronic and vibrational properties of a TMD material, using naturally abundant ^NAW^NASe₂ and isotopically pure ¹⁸⁶W⁸⁰Se₂ bilayer single crystals over a temperature range of 4.4-300 K. We demonstrate a higher optical band gap energy in ¹⁸⁶W⁸⁰Se₂ than in ^NAW^NASe₂ (3.9 ± 0.7 meV from 4.41 to 300 K), which is surprising as isotopes are neutral impurities. Phonon energies decrease in the isotopically pure crystal due to the atomic mass dependence of harmonic oscillations, with correspondingly longer E_2g and A²_1g phonon lifetimes than in the naturally abundant sample. The change in electronic band gap renormalization energy is postulated as being the dominant mechanism responsible for the change in optical emission spectra.

Nanoscale self-assembly of thermoelectric materials: a review of chemistry-based approaches

This review is concerned with the leading methods of bottom-up material preparation for thermal-to-electrical energy interconversion. The advantages, capabilities, and challenges from a material synthesis perspective are surveyed and the methods are discussed with respect to their potential for improvement (or possibly deterioration) of application-relevant transport properties. Solution chemistry-based synthesis approaches are re-assessed from the perspective of thermoelectric applications based on reported procedures for nanowire, quantum dot, mesoporous, hydro/solvothermal, and microwave-assisted syntheses as these techniques can effectively be exploited for industrial mass production. In terms of energy conversion efficiency, the benefit of self-assembly can occur from three paths: suppressing thermal conductivity, increasing thermopower, and boosting electrical conductivity. An ideal thermoelectric material gains from all three improvements simultaneously. Most bottom-up materials have been shown to exhibit very low values of thermal conductivity compared to their top-down (solid-state) counterparts, although the main challenge lies in improving their poor electrical properties. Recent developments in the field discussed in this review reveal that the traditional view of bottom-up thermoelectrics as inferior materials suffering from poor performance is not appropriate. Thermopower enhancement due to size and energy filtering effects, electrical conductivity enhancement, and thermal conductivity reduction mechanisms inherent in bottom-up nanoscale self-assembly syntheses are indicative of the impact that these techniques will play in future thermoelectric applications.

Origins of Moiré Patterns in CVD-grown MoS2 Bilayer Structures at the Atomic Scales

The chemical vapor deposition (CVD)-grown two-dimensional molybdenum disulfide (MoS₂) structures comprise of flakes of few layers with different dimensions. The top layers are relatively smaller in size than the bottom layers, resulting in the formation of edges/steps across adjacent layers. The strain response of such few-layer terraced structures is therefore likely to be different from exfoliated few-layered structures with similar dimensions without any terraces. In this study, the strain response of CVD-grown few-layered MoS₂ terraced structures is investigated at the atomic scales using classic molecular dynamics (MD) simulations. MD simulations suggest that the strain relaxation of CVD-grown triangular terraced structures is observed in the vertical displacement of the atoms across the layers that results in the formation of Moiré patterns. The Moiré islands are observed to nucleate at the corners or edges of the few-layered structure and propagate inwards under both tensile and compressive strains. The nucleation of these islands is observed to happen at tensile strains of ~ 2% and at compressive strains of ~2.5%. The vertical displacements of the atoms and the dimensions of the Moiré islands predicted using the MD simulation are in excellent agreement with that observed experimentally.