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Song W, Sun Y, He X, Li S. Epitaxial Growth of the Large-Scale, Highly-Ordered 3D GaN-Truncated Pyramid Array Toward an Ultrahigh Rejection Ratio and Responsivity Visible-Blind Ultraviolet Photodetection. ACS APPLIED MATERIALS & INTERFACES 2024; 16:35323-35332. [PMID: 38946487 DOI: 10.1021/acsami.4c06060] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/02/2024]
Abstract
The micro- and nanostructures of III-nitride semiconductors captivate strong interest owing to their distinctive properties and myriad potential applications. Nevertheless, challenges endure in managing the damage inflicted on crystals through top-down processes or achieving extensive control over the large-area growth of these microstructures via bottom-up methods, thereby impacting their optical and electronic properties. Here, we present novel epitaxially grown 3D GaN truncated pyramid arrays (TPAs) on patterned Si substrates, devoid of any catalyst. These GaN TPAs feature highly ordered, large-scale structures, attributed to the utilization of 3D Si substrates and thin AlN interlayers to alleviate epitaxial strains and limit dislocation formation. Comprehensive characterization via scanning electron microscopy, transmission electron microscopy, Raman spectroscopy, and cathodoluminescence attests to the superior structural and optical attributes of these crystals. Furthermore, photoluminescence and ultraviolet (UV)-visible diffuse reflectance spectroscopy reveal sharp band-edge emission and significant light trapping in the UV bands. Employing these GaN TPAs, we constructed metal-semiconductor-metal visible-blind UV photodetectors (PDs) incorporating Ti3C2 MXene as Schottky electrodes. These PDs display exceptional responsivity, achieving 5.32 × 103 mA/W at 255 nm and an ultrahigh UV/visible rejection ratio (R255nm/R450nm) approaching 106, which are 1-2 orders of magnitude higher than most recently reported works. This exploration showcases novel GaN-based microstructures characterized by uniformity, ordered geometry, and exemplary crystalline integrity, paving the way for developing optoelectronic applications.
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Affiliation(s)
- Weidong Song
- College of Applied Physics and Materials, Wuyi University, Jiangmen 529020, China
- Jiangmen Key Laboratory of Micro-Nano Functional Materials and Devices, Jiangmen 529020, China
| | - Yiming Sun
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, China
| | - Xin He
- College of Applied Physics and Materials, Wuyi University, Jiangmen 529020, China
- Jiangmen Key Laboratory of Micro-Nano Functional Materials and Devices, Jiangmen 529020, China
| | - Shuti Li
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, China
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Zhang C, Jin X, Liang Y, Yang L, Li J, Wang R, Liu B, Lv X, Jiang X. Homogeneous and well-aligned GaN nanowire arrays via a modified HVPE process and their cathodoluminescence properties. NANOSCALE 2022; 14:1459-1467. [PMID: 35019934 DOI: 10.1039/d1nr07753h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
In this work, we demonstrate the growth of homogeneous and well-aligned [0001]-oriented 1-D GaN nanoarrays via a modified hydride vapor phase epitaxy (HVPE) process using GaCl3 and NH3 as precursors. The density and length of the grown nanowires can be easily controlled by the process parameters. It was found that the growth technique provides Cl-rich growth conditions, which lead to special morphology and optical properties of the GaN nanoarrays. Different from reported GaN nanowires, the as-synthesized GaN nanoarrays in this study exhibit a hollow bamboo-like structure. Also, the cathodoluminescence spectrum shows strong visible luminescence between 400 and 600 nm wavelengths centered at 450 nm, and the disappearance of an intrinsic emission peak, which has been investigated in detail with the assistance of first-principles calculations. The strategy proposed in this work will pave a solid way for the controlled nucleation and growth of well-aligned GaN nanowire arrays which are significant for applications in large-scale integrated optoelectronic nanodevices, functionalized sensors and photoelectrocatalysis.
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Affiliation(s)
- Cai Zhang
- Shenyang National Laboratory for Materials Science (SYNL), Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS), No. 72, Wenhua Road, Shenhe District, Shenyang, 110016, China.
- School of Materials Science and Engineering, University of Science and Technology of China, No. 72 Wenhua Road, Shenyang, China
| | - Xin Jin
- College of Materials Science and Engineering, Chongqing University, Chongqing 400044, China
| | - Yan Liang
- Shenyang National Laboratory for Materials Science (SYNL), Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS), No. 72, Wenhua Road, Shenhe District, Shenyang, 110016, China.
| | - Liu Yang
- Shenyang National Laboratory for Materials Science (SYNL), Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS), No. 72, Wenhua Road, Shenhe District, Shenyang, 110016, China.
- School of Materials Science and Engineering, University of Science and Technology of China, No. 72 Wenhua Road, Shenyang, China
| | - Jing Li
- Foshan Graduate School of Northeastern University, No. 2, Zhihui Road, Foshan, China
| | - Rui Wang
- Institute for Structure and Function and Department of Physics, Chongqing University, Chongqing 400044, China
| | - Baodan Liu
- Foshan Graduate School of Northeastern University, No. 2, Zhihui Road, Foshan, China
| | - Xuewei Lv
- College of Materials Science and Engineering, Chongqing University, Chongqing 400044, China
| | - Xin Jiang
- Shenyang National Laboratory for Materials Science (SYNL), Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS), No. 72, Wenhua Road, Shenhe District, Shenyang, 110016, China.
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Mauser KW, Solà-Garcia M, Liebtrau M, Damilano B, Coulon PM, Vézian S, Shields PA, Meuret S, Polman A. Employing Cathodoluminescence for Nanothermometry and Thermal Transport Measurements in Semiconductor Nanowires. ACS NANO 2021; 15:11385-11395. [PMID: 34156820 PMCID: PMC8320239 DOI: 10.1021/acsnano.1c00850] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/29/2021] [Accepted: 06/16/2021] [Indexed: 06/13/2023]
Abstract
Thermal properties have an outsized impact on efficiency and sensitivity of devices with nanoscale structures, such as in integrated electronic circuits. A number of thermal conductivity measurements for semiconductor nanostructures exist, but are hindered by the diffraction limit of light, the need for transducer layers, the slow scan rate of probes, ultrathin sample requirements, or extensive fabrication. Here, we overcome these limitations by extracting nanoscale temperature maps from measurements of bandgap cathodoluminescence in GaN nanowires of <300 nm diameter with spatial resolution limited by the electron cascade. We use this thermometry method in three ways to determine the thermal conductivities of the nanowires in the range of 19-68 W/m·K, well below that of bulk GaN. The electron beam acts simultaneously as a temperature probe and as a controlled delta-function-like heat source to measure thermal conductivities using steady-state methods, and we introduce a frequency-domain method using pulsed electron beam excitation. The different thermal conductivity measurements we explore agree within error in uniformly doped wires. We show feasible methods for rapid, in situ, high-resolution thermal property measurements of integrated circuits and semiconductor nanodevices and enable electron-beam-based nanoscale phonon transport studies.
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Affiliation(s)
- Kelly W. Mauser
- Center
for Nanophotonics, NWO-Institute AMOLF, Amsterdam, 1098 XG, The Netherlands
| | | | - Matthias Liebtrau
- Center
for Nanophotonics, NWO-Institute AMOLF, Amsterdam, 1098 XG, The Netherlands
| | | | | | | | | | | | - Albert Polman
- Center
for Nanophotonics, NWO-Institute AMOLF, Amsterdam, 1098 XG, The Netherlands
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Pantle F, Becker F, Kraut M, Wörle S, Hoffmann T, Artmeier S, Stutzmann M. Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates. NANOSCALE ADVANCES 2021; 3:3835-3845. [PMID: 36133019 PMCID: PMC9417268 DOI: 10.1039/d1na00221j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/23/2021] [Accepted: 05/04/2021] [Indexed: 05/12/2023]
Abstract
GaN-on-diamond is a promising route towards reliable high-power transistor devices with outstanding performances due to better heat management, replacing common GaN-on-SiC technologies. Nevertheless, the implementation of GaN-on-diamond remains challenging. In this work, the selective area growth of GaN nanostructures on cost-efficient, large-scale available heteroepitaxial diamond (001) substrates by means of plasma-assisted molecular beam epitaxy is investigated. Additionally, we discuss the influence of an AlN buffer on the morphology of the GaN nanostructures. The nanowires and nanofins are characterized by a very high selectivity and controllable dimensions. Low temperature photoluminescence measurements are used to evaluate their structural quality. The growth of two GaN crystal domains, which are in-plane rotated against each other by 30°, is observed. The favoring of a certain domain is determined by the off-cut direction of the diamond substrates. By X-ray diffraction we show that the GaN nanostructures grow perpendicular to the diamond surface on off-cut diamond (001) substrates, which is in contrast to the growth on diamond (111), where the nanostructures are aligned with the substrate lattice. Polarity-selective wet chemical etching and Kelvin probe force microscopy reveal that the GaN nanostructures grow solely in the Ga-polar direction. This is a major advantage compared to the growth on diamond (111) and enables the application of GaN nanostructures on cost-efficient diamond for high-power/high-frequency applications.
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Affiliation(s)
- Florian Pantle
- Walter Schottky Institut and Physics Department, Technische Universität München Am Coulombwall 4 85748 Garching Germany
| | - Fabian Becker
- Walter Schottky Institut and Physics Department, Technische Universität München Am Coulombwall 4 85748 Garching Germany
| | - Max Kraut
- Walter Schottky Institut and Physics Department, Technische Universität München Am Coulombwall 4 85748 Garching Germany
| | - Simon Wörle
- Walter Schottky Institut and Physics Department, Technische Universität München Am Coulombwall 4 85748 Garching Germany
| | - Theresa Hoffmann
- Walter Schottky Institut and Physics Department, Technische Universität München Am Coulombwall 4 85748 Garching Germany
| | - Sabrina Artmeier
- Walter Schottky Institut and Physics Department, Technische Universität München Am Coulombwall 4 85748 Garching Germany
| | - Martin Stutzmann
- Walter Schottky Institut and Physics Department, Technische Universität München Am Coulombwall 4 85748 Garching Germany
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Snyder PJ, Reddy P, Kirste R, LaJeunesse DR, Collazo R, Ivanisevic A. Variably doped nanostructured gallium nitride surfaces can serve as biointerfaces for neurotypic PC12 cells and alter their behavior. RSC Adv 2018; 8:36722-36730. [PMID: 35558918 PMCID: PMC9088830 DOI: 10.1039/c8ra06836d] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/15/2018] [Accepted: 10/19/2018] [Indexed: 11/21/2022] Open
Abstract
Neurotypic PC12 cells behavior was studied on nanostructured GaN and rationalized with respect to surface charge, doping level, and chemical functionalization. The semiconductor analysis included atomic force microscopy, Kelvin probe force microscopy, and X-ray photoelectron spectroscopy. The semiconductor surfaces were then evaluated as biointerfaces, and the in vitro cell behavior was quantified based on cell viability, reactive oxygen species production, as well as time dependent intracellular Ca concentration, [Ca2+]i, a known cell-signaling molecule. In this work, we show that persistent photoconductivity (PPC) can be used to alter the surface properties prior to chemical functionalization, the concentration of dopants can have some effect on cellular behavior, and that chemical functionalization changes the surface potential before and after exposure to UV light. Finally, we describe some competing mechanisms of PPC-induced [Ca2+]i changes, and how researchers looking to control cell behavior non-invasively can consider PPC as a useful control knob. Neurotypic PC12 cells behavior was studied on nanostructured GaN and rationalized with respect to surface charge, doping level, and chemical functionalization.![]()
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Affiliation(s)
- Patrick J. Snyder
- Department of Materials Science and Engineering
- North Carolina State University
- Raleigh
- USA
| | | | | | - Dennis R. LaJeunesse
- Joint School of Nanoscience and Nanoengineering
- University of North Carolina-Greensboro
- North Carolina A & T University
- Greensboro
- USA
| | - Ramon Collazo
- Department of Materials Science and Engineering
- North Carolina State University
- Raleigh
- USA
| | - Albena Ivanisevic
- Department of Materials Science and Engineering
- North Carolina State University
- Raleigh
- USA
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