Monolithically Integrated Perovskite Semiconductor Lasers on Silicon Photonic Chips by Scalable Top-Down Fabrication

Metal-Halide Perovskite Lasers: Cavity Formation and Emission Characteristics

Hybrid metal-halide perovskites (MHPs) have shown remarkable optoelectronic properties as well as facile and cost-effective processability. With the success of MHP solar cells and light-emitting diodes, MHPs have also exhibited great potential as gain media for on-chip lasers. However, to date, stable operation of optically pumped MHP lasers and electrically driven MHP lasers-an essential requirement for MHP laser's insertion into chip-scale photonic integrated circuits-is not yet demonstrated. The main obstacles include the instability of MHPs in the atmosphere, rudimentary MHP laser cavity patterning methods, and insufficient understanding of emission mechanisms in MHP materials and cavities. This review aims to provide a detailed overview of different strategies to improve the intrinsic properties of MHPs in the atmosphere and to establish an optimal MHP cavity patterning method. In addition, this review discusses different emission mechanisms in MHP materials and cavities and how to distinguish them.

Integrated PbS Colloidal Quantum Dot Photodiodes on Silicon Nitride Waveguides

Colloidal quantum dots (QDs) have become a versatile optoelectronic material for emitting and detecting light that can overcome the limitations of a range of electronic and photonic technology platforms. Photonic integrated circuits (PICs), for example, face the persistent challenge of combining active materials with passive circuitry ideally suited for guiding light. Here, we demonstrate the integration of photodiodes (PDs) based on PbS QDs on silicon nitride waveguides (WG). Analyzing planar QDPDs first, we argue that the main limitation WG-coupled QDPDs face is detector saturation induced by the high optical power density of the guided light. Using the cladding thickness and waveguide width as design parameters, we mitigate this issue, and we demonstrate WG-QDPDs with an external quantum efficiency of 67.5% at 1275 nm that exhibit a linear photoresponse for input powers up to 400 nW. In the next step, we demonstrate a compact infrared spectrometer by integrating these WG-QDPDs on the output channels of an arrayed waveguide grating demultiplexer. This work provides a path toward a low-cost PD solution for PICs, which are attractive for large-scale production.

Quasi-2D Dion-Jacobson phase perovskites as a promising material platform for stable and high-performance lasers

Metal halide perovskites have shown outstanding optoelectronic and nonlinear optical properties; yet, to realize wafer-scale high-performance perovskite-integrated photonics, the materials also need to have excellent ambient stability and compatibility with nanofabrication processes. In this work, we introduce Dion-Jacobson (D-J) phase perovskites for photonic device applications. By combining self-assembled monolayer-assisted film growth with thermal pressing, we obtain a series of compact and extremely smooth D-J phase perovskite thin films that exhibit excellent stability during electron-beam lithography, solvent development, and rinse. Combining spectroscopic and morphological characterizations, we further demonstrate how organic spacers can be used to fine-tune the photophysical properties and processability of the perovskite films. The distributed-feedback lasers based on the D-J phase perovskites exhibit a low lasing threshold (5.5 μJ cm-2 pumped with nanosecond laser), record high Q factor (up to 30,000), and excellent stability, with an unencapsulated device demonstrating a T90 beyond 60 hours in ambient conditions (50% relative humidity).

Perovskite Microlaser Integration with Metasurface Supporting Topological Waveguiding

Halide perovskite nano- and microlasers have become a very convenient tool for many applications from sensing to reconfigurable optical chips. Indeed, they exhibit outstanding emission robustness to crystalline defects due to so-called "defect tolerance" allowing for their simple chemical synthesis and further integration with various photonic designs. Here we demonstrate that such robust microlasers can be combined with another class of resilient photonic components, namely, with topological metasurfaces supporting topological guided boundary modes. We show that this approach allows to outcouple and deliver the generated coherent light over tens of microns despite the presence of defects of different nature in the structure: sharp corners in the waveguide, random location of the microlaser, and defects in the microlaser caused by mechanical pressure applied during its transfer to the metasurface. As a result, the developed platform provides a strategy to attain robust integrated lasing-waveguiding designs resilient to a broad range of structural imperfections, both for electrons in a laser and for pseudo-spin-polarized photons in a waveguide.

Distributed Feedback Lasers by Thermal Nanoimprint of Perovskites Using Gelatin Gratings

To date, thermal nanoimprint lithography (NIL) for patterning hybrid perovskites has always involved an intricate etching step of a hard stamp material or its master. Here, we demonstrate for the first time the successful nanopatterning of a perovskite film by NIL with a low-cost polymeric stamp. The stamp consists of a dichromated gelatin grating structured by holographic lithography. The one-dimensional grating is imprinted into a perovskite film at 95 °C and 90 MPa for 10 min, resulting in a high quality second-order distributed feedback (DFB) laser. The laser exhibits an excellent performance with a threshold of 81 μJ/cm2, a line width of 0.32 nm, and a pronounced linear polarization. This novel approach enables cost-effective fabrication of high-quality DFB lasers compatible with different perovskite compositions and photonic nanostructures for a wide range of applications.

Ultralow-threshold quasi-CW lasing from FAPbBr3perovskite first-order DFB laser

Metal halide perovskites are emerging materials for integrated photonics. Here we report a quasi-CW pumped ultra-low ASE/lasing threshold formamidinium lead bromide (FAPbBr₃) laser. The laser achieved stable lasing at 555 nm with a full width at half maximum (FWHM) of 0.6 nm, showing a low lasing threshold of 22.6μJ cm^-2under 3.5 nanosecond quasi-CW excitation at room temperature. The material also showed an ultra-low ASE threshold of 46μJ cm^-2under the same pumping condition. Through polymer doping, we showed that the material's performance can be improved by increasing bimolecular recombination rate with reduced grain size.

Interplay of Purcell effect and extraction efficiency in CsPbBr3 quantum dots coupled to Mie resonators

Inorganic halide perovskite quantum dots have risen in recent years as efficient active materials in numerous optoelectronic applications ranging from solar cells to light-emitting diodes and lasers, and have lately been tested as quantum emitters. Perovskite quantum dots are often coupled to photonic structures either to enhance their emission properties, by accelerating their emission rate thanks to the Purcell effect, or to increase light extraction. From a theoretical point of view, the first effect is often considered at the single-dipole level while the latter is often treated at the mesoscopic level, except possibly for quantum emitters. In this work we employ a layer of perovskite quantum dots coupled to dielectric Mie resonators to exploit both effects simultaneously and achieve an 18-fold increase in luminescence. Our numerical simulations, combined with spatially- and time-resolved photoluminescence measurements, reveal how the macroscopic response of the perovskite-on-Mie resonator structure results from the interplay of the two effects averaged over the whole spatial distribution of emitters. Our work provides thus guiding principles for maximizing the output intensity of quantum emitters embedded into photonic resonators as well as classical emitters integrated in perovskite-based optoelectronic devices.

Facet Engineering for Amplified Spontaneous Emission in Metal Halide Perovskite Nanocrystals

Auger recombination and thermalization time are detrimental in reducing the gain threshold of optically pumped semiconductor nanocrystal (NC) lasers for future on-chip nanophotonic devices. Here, we report the design strategy of facet engineering to reduce the gain threshold of amplified spontaneous emission by manyfold in NCs of the same concentration and edge length. We achieved this hallmark result by controlling the Auger recombination rates dominated by processes involving NC volume and thermalization time to the emitting states by optimizing the number of facets from 6 (cube) to 12 (rhombic dodecahedron) and 26 (rhombicuboctahedrons) in CsPbBr₃ NCs. For instance, we demonstrate a 2-fold reduction in Auger recombination rates and thermalization time with increased number of facets. The gain threshold can be further reduced ∼50% by decreasing the sample temperature to 4 K. Our systematic studies offer a new method to reduce the gain threshold that ultimately forms the basis of nanolasers.

High-Quality Patterning of CsPbBr3 Perovskite Films through Lamination-Assisted Femtosecond Laser Ablation toward Light-Emitting Diodes

Metal halide perovskites have exhibited promising potential for practical applications such as image sensors and displays benefiting from their outstanding optoelectronic properties. However, owing to the instability of the perovskite materials, producing patterned perovskite films with adequately high quality and high precision for such practical applications poses a challenge for existing patterning methods. Herein, the lamination-assisted femtosecond laser ablation (LA-FsLA) technique was successfully applied to fabricate patterned CsPbBr₃ films with sufficiently high quality and high precision. A sandwich-laminated structure (glass/CsPbBr₃/glass) was introduced to avoid the impact of debris on the patterned perovskite film. As a result, arbitrarily patterned perovskite films with high quality, submicron precision, and well-defined edges were successfully prepared. Moreover, the light-emitting diodes (LEDs) based on the patterned perovskite films also exhibit good emission characteristics. This work provides a promising strategy for the fabrication of patterned perovskite films with adequately high quality and high precision toward perovskite-based optoelectronic devices.

Toward temperature-insensitive near-infrared optical gain using low-toxicity Ag2Se quantum dots

With the growing demand for developing lasers with high stability and integration, temperature-insensitive gain materials are highly desirable. Here, temperature-insensitive near-infrared (NIR) optical gain from low-toxicity Ag₂Se quantum dots (QDs) is reported. Due to the large energy splitting between the band-edge hole state and the following state (∼430 meV), the thermal depopulation of the band-edge hole state in Ag₂Se QDs is significantly suppressed. The long biexciton lifetime (245 ps at 300 K) of the QDs is sufficient to support the establishment of amplified spontaneous emission (ASE). Consequently, the characteristic temperature of the ASE threshold for the Ag₂Se QD film is as high as 360 K, and efficient NIR ASE is observed up to 340 K. In addition, when the temperature is lower than 200 K, the ASE peak position is temperature insensitive because acoustic phonons cannot be effectively excited. Our findings reveal that Ag₂Se QDs can be utilized as an excellent gain material for environmentally friendly temperature-insensitive NIR lasers.

Integration of on-chip perovskite nanocrystal laser and long-range surface plasmon polariton waveguide with etching-free process

Perovskite materials prepared in the form of solution-processed nanocrystals and used in top-down fabrication techniques are very attractive to develop low-cost and high-quality integrated optoelectronic circuits. Particularly, integrated miniaturized coherent light sources that can be connected to light-guiding structures on a chip are highly desired. To control light propagating on a small footprint with low-loss optical modes, long-range surface plasmon polariton (LRSPP) waveguides are employed. Herein, we demonstrate an on-chip fabricated photonic-plasmonic hybrid system consisting of a perovskite lasing structure coupled to an LRSPP waveguide achieving a low lasing threshold and a propagation length over 100 μm. Preventing perovskite material degradation and the formation of surface roughness of the laser cavity during fabrication is made possible by designing a fabrication technique without any etching step.

Coupling Localized Laser Writing and Nonlocal Recrystallization in Perovskite Crystals for Reversible Multidimensional Optical Encryption

The ability to generate and manipulate photoluminescence (PL) with high spatial resolution has been of primary importance for applications in micro-optoelectronics, while the emerging metal halide perovskites offer novel material platforms where diverse photonic functionalities and fine structuring are constantly explored. Herein, micro-PL patterns consisting of highly luminescent CsPbBr₃ nanocrystals (NCs) in nonluminescent perovskite crystals are directly fabricated by focused femtosecond laser irradiation. Further modulation with a moisture field leads to the selective dissolution of the laser-destabilized perovskite structures as revealed by density functional theory simulations, thus allowing for facile control of the reversible PL from the recrystallization of moisture-induced CsPbBr₃ NCs. By leveraging the coupled laser writing and moisture modulation, multimodal information encryption is realized by reversible encryption-reading and repeatable erasing-refreshing. This optical storage mechanism is also extended to 3D and 4D by realizing spatially and temporally resolved optical encryption. The coupled multifield modulation on perovskite crystals can enable potential applications in optical storage and encryption, and offer a novel solution for the creation and manipulation of localized PL structures with high temporal and spatial resolutions.

Lithographic in-mold patterning for CsPbBr3 nanocrystals distributed Bragg reflector single-mode laser

Extensive studies on lead halide perovskites have shown that these materials are excellent candidates as gain mediums. Recently, many efforts have been made to incorporate perovskite lasers in integrated optical circuits. Possible solutions would be to utilize standard lithography with an etching/lift-off process or a direct laser etching technique. However, due to the fragile nature of the lead halide perovskites which gives rise to significant material deterioration during the lithography and etching processes, realizing a small-size, low-roughness, and single-mode laser remains a challenge. Here, a lithographic in-mold patterning method realized by nanocrystal concentration control and a multi-step filling-drying process is proposed to demonstrate CsPbBr₃ nanocrystals distributed-Bragg-reflector (DBR) waveguide lasers. This method realizes the patterning of the CsPbBr₃ nanocrystal laser cavity and DBR grating without lift-off and etching processes, and the smallest fabricated structures are obtained in a few hundred nanometers. The single-mode lasing is demonstrated at room temperature with a threshold of 23.5 μJ cm^-2. The smallest full width at half maximum FWHM of the laser output is 0.4 nm. Due to the fabrication process and the DBR laser geometry, the lasers can be fabricated in a compact array, which is important for incorporating perovskite-based lasers in complex optoelectronic circuits.

Microsteganography on all inorganic perovskite micro-platelets by direct laser writing

Direct laser writing (DLW) is a mask-free and cost-efficient micro-fabrication technology, which has been explored to pattern structures on perovskites. However, there is still a lack of research on DLW methods for microsteganography. Herein, we developed a sophisticated DLW condition to pattern on CsPbBr₃ perovskite micro-platelets (MPs). In addition to the reversible PL quenching caused by photo-induced ion migration, permanent nonradiative centers are also produced by the DLW treatment. Therefore, the patterned information is retained after long-term storage. Meanwhile, the mild DLW condition only results in a faint trace, which is almost invisible under a regular optical microscope. Thus, the patterned information is hidden unless applying an excitation source, which paves the way for applications in microsteganography and anti-counterfeiting. As a proof-of-concept, different patterns are drawn on the CsPbBr₃ MPs by DLW, which are only observable under a fluorescence microscope.

Halide Perovskite Semiconductor Lasers: Materials, Cavity Design, and Low Threshold

Solution-processable semiconductor lasers have been a long-standing challenge for next-generation displays, light sources, and communication technologies. Metal halide perovskites, which combine the advantages of inorganic and organic semiconductors, have recently emerged not only as excellent candidates for solution-processable lasers but also as potential complementary gain materials for filling the "green gap" and supplement industrial nanolasers based on classic II-VI/III-V semiconductors. Numerous perovskite lasers have been developed successfully with superior performance in terms of cost-effectiveness, low threshold, high coherence, and multicolor tunability. This mini review surveys the development, current status, and perspectives of perovskite lasers, categorized into thin film lasers, nanocrystals lasers, microlasers, and device concepts including polariton and bound-in-continuum lasers with a focus on material fundamentals, cavity design, and low-threshold devices in addition to critical issues such as mass fabrication and applications.

Ultralow-Threshold Continuous-Wave Room-Temperature Crystal-Fiber/Nanoperovskite Hybrid Lasers for All-Optical Photonic Integration

Continuous-wave (CW) room-temperature (RT) laser operation with low energy consumption is an ultimate goal for electrically driven lasers. A monolithically integrated perovskite laser in a chip-level fiber scheme is ideal. However, because of the well-recognized air and thermal instabilities of perovskites, laser action in a perovskite has mostly been limited to either pulsed or cryogenic-temperature operations. Most CW laser operations at RT have had poor durability. Here, crystal fibers that have robust and high-heat-load nature are shown to be the key to enabling the first demonstration of ultralow-threshold CW RT laser action in a compact, monolithic, and inexpensive crystal fiber/nanoperovskite hybrid architecture that is directly pumped with a 405 nm diode laser. Purcell-enhanced light-matter coupling between the atomically smooth fiber microcavity and the perovskite nanocrystallites gain medium enables a high Q (≈1500) and a high β (0.31). This 762 nm laser outperforms previously reported structures with a record-low threshold of 132 nW and an optical-to-optical slope conversion efficiency of 2.93%, and it delivers a stable output for CW and RT operation. These results represent a significant advancement toward monolithic all-optical integration.

Micro- and Nanostructured Lead Halide Perovskites: From Materials to Integrations and Devices

In the past decade, lead halide perovskites have been intensively explored due to their promising future in photovoltaics. Owing to their remarkable material properties such as solution processability, nice defect tolerance, broad bandgap tunability, high quantum yields, large refractive index, and strong nonlinear effects, this family of materials has also shown advantages in many other optoelectronic devices including microlasers, photodetectors, waveguides, and metasurfaces. Very recently, the stability of perovskite devices has been improved with the optimization of synthesis methods and device architectures. It is widely accepted that it is the time to integrate all the perovskite devices into a real system. However, for integrated photonic circuits, the shapes and distributions of chemically synthesized perovskites are quite random and not suitable for integration. Consequently, controlled synthesis and the top-down fabrication process are highly desirable to break the barriers. Herein, the developments of patterning and integration techniques for halide perovskites, as well as the structure/function relationships, are systematically reviewed. The recent progress in the study of optical responses originating from nanostructured perovskites is also presented. Lastly, the challenges and perspective for nanostructured-perovskite devices are discussed.

Emerging Light-Emitting Materials for Photonic Integration

The arrival of the information explosion era is urging the development of large-bandwidth high-data-rate optical interconnection technology. Up to now, the biggest stumbling block in optical interconnections has been the lack of efficient light sources despite significant progress that has been made in germanium-on-silicon (Ge-on-Si) and III-V-on-silicon (III-V-on-Si) lasers. 2D materials and metal halide perovskites have attracted much attention in recent years, and exhibit distinctive advantages in the application of on-chip light emitters. Herein, this Progress Report reviews the recent progress made in light-emitting materials with a focus on new materials, i.e., 2D materials and metal halide perovskites. The report briefly introduces the current status of Ge-on-Si and III-V-on-Si lasers and discusses the advances of 2D and perovskite light-emitting materials for photonic integration, including their optical properties, preparation methods, as well as the light sources based on these materials. Finally, challenges and perspectives of these emerging materials on the way to the efficient light sources are discussed.

Metamaterial Enhancement of Metal-Halide Perovskite Luminescence

Metal-halide perovskites are rapidly emerging as solution-processable optical materials for light-emitting applications. Here, we adopt a plasmonic metamaterial approach to enhance photoluminescence emission and extraction of methylammonium lead iodide (MAPbI₃) thin films based on the Purcell effect. We show that hybridization of the active metal-halide film with resonant nanoscale sized slits carved into a gold film can yield more than 1 order of magnitude enhancement of luminescence intensity and nearly 3-fold reduction of luminescence lifetime corresponding to a Purcell enhancement factor of more than 300. These results show the effectiveness of resonant nanostructures in controlling metal-halide perovskite light emission properties over a tunable spectral range, a viable approach toward highly efficient perovskite light-emitting devices and single-photon emitters.

Lead halide perovskite vortex microlasers

Lead halide perovskite microlasers have been very promising for versatile optoelectronic applications. However, most perovskite microlasers are linearly polarized with uniform wavefront. The structured laser beams carrying orbital angular momentum have rarely been studied and the applications of perovskites in next-generation optical communications are thus hindered. Herein, we experimentally demonstrate the perovskite vortex microlasers with highly directional outputs and well−controlled topological charges. High quality gratings have been experimentally fabricated in perovskite film and the subsequent vertical cavity surface emitting lasers (VCSELs) with divergent angles of 3^o are achieved. With the control of Archimedean spiral gratings, the wavefront of the perovskite VCSELs has been switched to be helical with topological charges of q = −4 to 4. This research is able to expand the potential applications of perovskite microlasers in hybrid integrated photonic networks, as well as optical computing.

Integration of III-V semiconductor microlasers into modern Si or Si3N4 based photonic integrated circuits remains a challenge. Here, the authors demonstrate a perovskite vortex microlaser with highly directional outputs and well-controlled topological charges that is highly compatible with most materials.

Perovskite-Gallium Phosphide Platform for Reconfigurable Visible-Light Nanophotonic Chip

Reduction of the wavelength in on-chip light circuitry is critically important not only for the sake of keeping up with Moore's law for photonics but also for reaching toward the spectral ranges of operation of emerging materials, such as atomically thin semiconductors, vacancy-based single-photon emitters, and quantum dots. This requires efficient and tunable light sources as well as compatible waveguide networks. For the first challenge, halide perovskites are prospective materials that enable cost-efficient fabrication of micro- and nanolasers. On the other hand, III-V semiconductor nanowires are optimal for guiding of visible light as they exhibit a high refractive index as well as excellent shape and crystalline quality beneficial for strong light confinement and long-range waveguiding. Here, we develop an integrated platform for visible light that comprises gallium phosphide (GaP) nanowires directly embedded into compact CsPbBr₃-based light sources. In our devices, perovskite microcrystals support stable room-temperature lasing and broadband chemical tuning of the emission wavelength in the range of 530-680 nm, whereas GaP nanowaveguides support efficient outcoupling of light, its subwavelength (<200 nm) confinement, and long-range guiding over distances more than 20 μm. As a highlight of our approach, we demonstrate sequential transfer and conversion of light using an intermediate perovskite nanoparticle in a chain of GaP nanowaveguides.

Micro- and Nanopatterning of Halide Perovskites Where Crystal Engineering for Emerging Photoelectronics Meets Integrated Device Array Technology

Tremendous efforts have been devoted to developing thin film halide perovskites (HPs) for use in high-performance photoelectronic devices, including solar cells, displays, and photodetectors. Furthermore, structured HPs with periodic micro- or nanopatterns have recently attracted significant interest due to their potential to not only improve the efficiency of an individual device via the controlled arrangement of HP crystals into a confined geometry, but also to technologically pixelate the device into arrays suitable for future commercialization. However, micro- or nanopatterning of HPs is not usually compatible with conventional photolithography, which is detrimental to ionic HPs and requires special techniques. Herein, a comprehensive overview of the state-of-the-art technologies used to develop micro- and nanometer-scale HP patterns, with an emphasis on their controlled microstructures based on top-down and bottom-up approaches, and their potential for future applications, is provided. Top-down approaches include modified conventional lithographic techniques and soft-lithographic methods, while bottom-up approaches include template-assisted patterning of HPs based on lithographically defined prepatterns and self-assembly. HP patterning is shown here to not only improve device performance, but also to reveal the unprecedented functionality of HPs, leading to new research areas that utilize their novel photophysical properties.

Light-Emitting Nanophotonic Designs Enabled by Ultrafast Laser Processing of Halide Perovskites

Nanophotonics based on resonant nanostructures and metasurfaces made of halide perovskites have become a prospective direction for efficient light manipulation at the subwavelength scale in advanced photonic designs. One of the main challenges in this field is the lack of large-scale low-cost technique for subwavelength perovskite structures fabrication preserving highly efficient luminescence. Here, unique properties of halide perovskites addressed to their extremely low thermal conductivity (lower than that of silica glass) and high defect tolerance to apply projection femtosecond laser lithography for nanofabrication with precise spatial control in all three dimensions preserving the material luminescence efficiency are employed. Namely, with CH₃ NH₃ PbI₃ perovskite highly ordered nanoholes and nanostripes of width as small as 250 nm, metasurfaces with periods less than 400 nm, and nanowire lasers as thin as 500 nm, corresponding to the state-of-the-art in multistage expensive lithographical methods are created. Remarkable performance of the developed approach allows to demonstrate a number of advanced optical applications, including morphology-controlled photoluminescence yield, structural coloring, optical- information encryption, and lasing.

Structural and spectroscopic studies of a nanostructured silicon-perovskite interface

While extensively investigated in thin film form for energy materials applications, this work investigates the formation of APbBr3 structures (A = CH3NH3+ (MA), Cs+) in silicon and oxidized silicon nanotubes (SiNTs) with varying inner diameter. We carefully control the extent of oxidation of the nanotube host and correlate the relative Si/Si oxide content in a given nanotube host with the photoluminescence quantum efficiency (PLQE) of the perovskite. Complementing these measurements is an evaluation of average PL lifetimes of a given APbBr3 nanostructure, as evaluated by time-resolved confocal photoluminescence measurements. Increasing Si (decreasing oxide) content in the nanotube host results in a sensitive reduction of MAPbBr3 PLQE, with a concomitant decrease in average lifetime (τave). We interpret these observations in terms of decreased defect passivation by a lower concentration of oxide species surrounding the perovskite. In addition, we show that the use of selected nanotube templates leads to more stable perovskite PL in air over time (weeks). Taken in concert, such fundamental observations have implications for interfacial carrier interactions in tandem Si/perovskite photovoltaics.

Lasing in Si3N4-organic hybrid (SiNOH) waveguides

Silicon nitride (Si₃N₄) waveguides offer low-loss wave propagation over a wide spectral range including visible wavelengths and lend themselves to photonic integrated circuits for bio-photonic applications. The Si₃N₄ device portfolio, however, is so far limited to passive devices that need to be fed by external light sources. This often requires delicate and costly fiber-chip coupling schemes that are subject to stringent alignment tolerances. In this paper, we present and investigate a class of lasers that combine Si₃N₄ waveguides with light-emitting organic cladding materials in a hybrid approach. These Si₃N₄-organic hybrid (SiNOH) lasers are operated by optical pumping from the top with low alignment precision. We theoretically and experimentally investigate different SiNOH laser concepts based on spiral-shaped ring resonators and distributed feedback (DFB) resonators. While our devices are designed for an emission wavelength of approximately 600 nm, the SiNOH laser concept can be transferred to a large range of wavelengths in the visible spectrum. The devices are amenable to cost-efficient mass production and have the potential to address a wide range of applications in bio-photonics and point-of-care diagnostics.

Inorganic and Layered Perovskites for Optoelectronic Devices

Organic-inorganic halide perovskites are making breakthroughs in a range of optoelectronic devices. Reports of >23% certified power conversion efficiency in photovoltaic devices, external quantum efficiency >21% in light-emitting diodes (LEDs), continuous-wave lasing and ultralow lasing thresholds in optically pumped lasers, and detectivity in photodetectors on a par with commercial GaAs rivals are being witnessed, making them the fastest ever emerging material technology. Still, questions on their toxicity and long-term stability raise concerns toward their market entry. The intrinsic instability in these materials arises due to the organic cation, typically the volatile methylamine (MA), which contributes to hysteresis in the current-voltage characteristics and ion migration. Alternative inorganic substitutes to MA, such as cesium, and large organic cations that lead to a layered structure, enhance structural as well as device operational stability. These perovskites also provide a high exciton binding energy that is a prerequisite to enhance radiative emission yield in LEDs. The incorporation of inorganic and layered perovskites, in the form of polycrystalline films or as single-crystalline nanostructure morphologies, is now leading to the demonstration of stable devices with excellent performance parameters. Herein, key developments made in various optoelectronic devices using these perovskites are summarized and an outlook toward stable yet efficient devices is presented.

Room-Temperature Stimulated Emission and Lasing in Recrystallized Cesium Lead Bromide Perovskite Thin Films

Cesium lead halide perovskites are of interest for light-emitting diodes and lasers. So far, thin-films of CsPbX₃ have typically afforded very low photoluminescence quantum yields (PL-QY < 20%) and amplified spontaneous emission (ASE) only at cryogenic temperatures, as defect related nonradiative recombination dominated at room temperature (RT). There is a current belief that, for efficient light emission from lead halide perovskites at RT, the charge carriers/excitons need to be confined on the nanometer scale, like in CsPbX₃ nanoparticles (NPs). Here, thin films of cesium lead bromide, which show a high PL-QY of 68% and low-threshold ASE at RT, are presented. As-deposited layers are recrystallized by thermal imprint, which results in continuous films (100% coverage of the substrate), composed of large crystals with micrometer lateral extension. Using these layers, the first cesium lead bromide thin-film distributed feedback and vertical cavity surface emitting lasers with ultralow threshold at RT that do not rely on the use of NPs are demonstrated. It is foreseen that these results will have a broader impact beyond perovskite lasers and will advise a revision of the paradigm that efficient light emission from CsPbX₃ perovskites can only be achieved with NPs.

Single-Mode Lasing from Imprinted Halide-Perovskite Microdisks

Halide-perovskite microlasers have demonstrated fascinating performance owing to their low-threshold lasing at room temperature and low-cost fabrication. However, being synthesized chemically, controllable fabrication of such microlasers remains challenging, and it requires template-assisted growth or complicated nanolithography. Here, we suggest and implement an approach for the fabrication of microlasers by direct laser ablation of a thin film on glass with donut-shaped femtosecond laser beams. The fabricated microlasers represent MAPbBr _xI _y microdisks with 760 nm thickness and diameters ranging from 2 to 9 μm that are controlled by a topological charge of the vortex beam. As a result, this method allows one to fabricate single-mode perovskite microlasers operating at room temperature in a broad spectral range (550-800 nm) with Q-factors up to 5500. High-speed fabrication and reproducibility of microdisk parameters, as well as a precise control of their location on a surface, make it possible to fabricate centimeter-sized arrays of such microlasers. Our finding is important for direct writing of fully integrated coherent light sources for advanced photonic and optoelectronic circuitry.