1
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Mallik G, Kabiraj A, Swain DK, Dash PP, Kumari P, Rath S. Entropy-driven nonequilibrium phonon-stimulated electron-phonon coupling in tin dioxide nanorods. Phys Rev E 2024; 109:024213. [PMID: 38491670 DOI: 10.1103/physreve.109.024213] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/28/2023] [Accepted: 01/15/2024] [Indexed: 03/18/2024]
Abstract
Nonequilibrium (NEQ) phonon fluctuation in a nanosystem has been studied through the statistical assessment of the entropy-production and -consumption events in ultrasmall tin dioxide (SnO_{2}) nanorods. Size- and shape-dependent alteration in free energy leading to modulation of the probability distribution function of the phonon dynamics has been observed from the x-ray diffraction and Raman scattering characterizations. The Gallavotti-Cohen nonequilibrium fluctuation theorem has been utilized to qualitatively describe the aforementioned behaviors under the influence of a global flux. The observation of entropy consumption and thermodynamically favorable entropy-production events indicates the presence of NEQ fluctuations in the phonon modes. The effective energy scale of fluctuation in driven phonon modes, dissipating energy faster than relaxation time, is quantified on the order of nanojoules. From optical absorption and photoluminescence studies, the observation of the electron-phonon coupled state confirms the interaction of the NEQ phonons with electrons. The strength of the coupling has been estimated from the temperature-independent Barry center shift and found to be enhanced to 5.35. Valence band x-ray photoelectron spectroscopy and Fourier transformed infrared spectroscopy analyses reconcile NEQ phonon mediated alteration of the valence band density of states, activation of silent phonon modes, and superior excitonic transitions, suitable for the new generation of ultrafast quantum device applications.
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Affiliation(s)
- G Mallik
- School of Basic Sciences, Indian Institute of Technology Bhubaneswar, Jatni-752050, Khordha, Odisha, India
| | - A Kabiraj
- School of Basic Sciences, Indian Institute of Technology Bhubaneswar, Jatni-752050, Khordha, Odisha, India
| | - D K Swain
- School of Basic Sciences, Indian Institute of Technology Bhubaneswar, Jatni-752050, Khordha, Odisha, India
| | - P P Dash
- School of Basic Sciences, Indian Institute of Technology Bhubaneswar, Jatni-752050, Khordha, Odisha, India
| | - P Kumari
- School of Basic Sciences, Indian Institute of Technology Bhubaneswar, Jatni-752050, Khordha, Odisha, India
| | - S Rath
- School of Basic Sciences, Indian Institute of Technology Bhubaneswar, Jatni-752050, Khordha, Odisha, India
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2
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Moradifar P, Liu Y, Shi J, Siukola Thurston ML, Utzat H, van Driel TB, Lindenberg AM, Dionne JA. Accelerating Quantum Materials Development with Advances in Transmission Electron Microscopy. Chem Rev 2023. [PMID: 37979189 DOI: 10.1021/acs.chemrev.2c00917] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/20/2023]
Abstract
Quantum materials are driving a technology revolution in sensing, communication, and computing, while simultaneously testing many core theories of the past century. Materials such as topological insulators, complex oxides, superconductors, quantum dots, color center-hosting semiconductors, and other types of strongly correlated materials can exhibit exotic properties such as edge conductivity, multiferroicity, magnetoresistance, superconductivity, single photon emission, and optical-spin locking. These emergent properties arise and depend strongly on the material's detailed atomic-scale structure, including atomic defects, dopants, and lattice stacking. In this review, we describe how progress in the field of electron microscopy (EM), including in situ and in operando EM, can accelerate advances in quantum materials and quantum excitations. We begin by describing fundamental EM principles and operation modes. We then discuss various EM methods such as (i) EM spectroscopies, including electron energy loss spectroscopy (EELS), cathodoluminescence (CL), and electron energy gain spectroscopy (EEGS); (ii) four-dimensional scanning transmission electron microscopy (4D-STEM); (iii) dynamic and ultrafast EM (UEM); (iv) complementary ultrafast spectroscopies (UED, XFEL); and (v) atomic electron tomography (AET). We describe how these methods could inform structure-function relations in quantum materials down to the picometer scale and femtosecond time resolution, and how they enable precision positioning of atomic defects and high-resolution manipulation of quantum materials. For each method, we also describe existing limitations to solve open quantum mechanical questions, and how they might be addressed to accelerate progress. Among numerous notable results, our review highlights how EM is enabling identification of the 3D structure of quantum defects; measuring reversible and metastable dynamics of quantum excitations; mapping exciton states and single photon emission; measuring nanoscale thermal transport and coupled excitation dynamics; and measuring the internal electric field and charge density distribution of quantum heterointerfaces- all at the quantum materials' intrinsic atomic and near atomic-length scale. We conclude by describing open challenges for the future, including achieving stable sample holders for ultralow temperature (below 10K) atomic-scale spatial resolution, stable spectrometers that enable meV energy resolution, and high-resolution, dynamic mapping of magnetic and spin fields. With atomic manipulation and ultrafast characterization enabled by EM, quantum materials will be poised to integrate into many of the sustainable and energy-efficient technologies needed for the 21st century.
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Affiliation(s)
- Parivash Moradifar
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
| | - Yin Liu
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, United States
| | - Jiaojian Shi
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
- SLAC National Accelerator Laboratory, 2575 Sand Hill Road MS69, Menlo Park, California 94025, United States
| | | | - Hendrik Utzat
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
- Department of Chemistry, University of California Berkeley, Berkeley, California 94720, United States
| | - Tim B van Driel
- Linac Coherent Light Source, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, United States
| | - Aaron M Lindenberg
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
- SLAC National Accelerator Laboratory, 2575 Sand Hill Road MS69, Menlo Park, California 94025, United States
| | - Jennifer A Dionne
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
- Department of Radiology, Stanford University, Stanford, California 94305, United States
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3
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Prasad AK, Šebesta J, Esteban-Puyuelo R, Maldonado P, Ji S, Sanyal B, Grånäs O, Weissenrieder J. Nonequilibrium Phonon Dynamics and Its Impact on the Thermal Conductivity of the Benchmark Thermoelectric Material SnSe. ACS NANO 2023; 17:21006-21017. [PMID: 37862596 PMCID: PMC10655201 DOI: 10.1021/acsnano.3c03827] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/22/2023]
Abstract
Thermoelectric materials play a vital role in the pursuit of a sustainable energy system by allowing the conversion of waste heat to electric energy. Low thermal conductivity is essential to achieving high-efficiency conversion. The conductivity depends on an interplay between the phononic and electronic properties of the nonequilibrium state. Therefore, obtaining a comprehensive understanding of nonequilibrium dynamics of the electronic and phononic subsystems as well as their interactions is key for unlocking the microscopic mechanisms that ultimately govern thermal conductivity. A benchmark material that exhibits ultralow thermal conductivity is SnSe. We study the nonequilibrium phonon dynamics induced by an excited electron population using a framework combining ultrafast electron diffuse scattering and nonequilibrium kinetic theory. This in-depth approach provides a fundamental understanding of energy transfer in the spatiotemporal domain. Our analysis explains the dynamics leading to the observed low thermal conductivity, which we attribute to a mode-dependent tendency to nonconservative phonon scattering. The results offer a penetrating perspective on energy transport in condensed matter with far-reaching implications for rational design of advanced materials with tailored thermal properties.
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Affiliation(s)
- Amit Kumar Prasad
- Materials and Nano Physics, School of Engineering Sciences, KTH Royal Institute of Technology, SE-100 44 Stockholm, Sweden
| | - Jakub Šebesta
- Materials Theory, Department of Physics and Astronomy, Uppsala University, Box 516, 751 20 Uppsala, Sweden
| | - Raquel Esteban-Puyuelo
- Materials Theory, Department of Physics and Astronomy, Uppsala University, Box 516, 751 20 Uppsala, Sweden
| | - Pablo Maldonado
- Materials Theory, Department of Physics and Astronomy, Uppsala University, Box 516, 751 20 Uppsala, Sweden
| | - Shaozheng Ji
- Materials and Nano Physics, School of Engineering Sciences, KTH Royal Institute of Technology, SE-100 44 Stockholm, Sweden
| | - Biplab Sanyal
- Materials Theory, Department of Physics and Astronomy, Uppsala University, Box 516, 751 20 Uppsala, Sweden
| | - Oscar Grånäs
- Materials Theory, Department of Physics and Astronomy, Uppsala University, Box 516, 751 20 Uppsala, Sweden
| | - Jonas Weissenrieder
- Materials and Nano Physics, School of Engineering Sciences, KTH Royal Institute of Technology, SE-100 44 Stockholm, Sweden
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4
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Shi J, Bie YQ, Zong A, Fang S, Chen W, Han J, Cao Z, Zhang Y, Taniguchi T, Watanabe K, Fu X, Bulović V, Kaxiras E, Baldini E, Jarillo-Herrero P, Nelson KA. Intrinsic 1[Formula: see text] phase induced in atomically thin 2H-MoTe 2 by a single terahertz pulse. Nat Commun 2023; 14:5905. [PMID: 37737233 PMCID: PMC10516973 DOI: 10.1038/s41467-023-41291-w] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/15/2022] [Accepted: 08/29/2023] [Indexed: 09/23/2023] Open
Abstract
The polymorphic transition from 2H to 1[Formula: see text]-MoTe2, which was thought to be induced by high-energy photon irradiation among many other means, has been intensely studied for its technological relevance in nanoscale transistors due to the remarkable improvement in electrical performance. However, it remains controversial whether a crystalline 1[Formula: see text] phase is produced because optical signatures of this putative transition are found to be associated with the formation of tellurium clusters instead. Here we demonstrate the creation of an intrinsic 1[Formula: see text] lattice after irradiating a mono- or few-layer 2H-MoTe2 with a single field-enhanced terahertz pulse. Unlike optical pulses, the low terahertz photon energy limits possible structural damages. We further develop a single-shot terahertz-pump-second-harmonic-probe technique and reveal a transition out of the 2H-phase within 10 ns after photoexcitation. Our results not only provide important insights to resolve the long-standing debate over the light-induced polymorphic transition in MoTe2 but also highlight the unique capability of strong-field terahertz pulses in manipulating quantum materials.
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Affiliation(s)
- Jiaojian Shi
- Department of Chemistry, Massachusetts Institute of Technology, Cambridge, MA 02139 USA
| | - Ya-Qing Bie
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139 USA
- State Key Lab of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275 People’s Republic of China
| | - Alfred Zong
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139 USA
- Department of Chemistry, University of California, Berkeley, CA 94720 USA
| | - Shiang Fang
- Department of Physics, Harvard University, Cambridge, MA 02138 USA
- Department of Physics and Astronomy, Center for Materials Theory, Rutgers University, Piscataway, NJ 08854 USA
- Present Address: Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139 USA
| | - Wei Chen
- Department of Physics, Harvard University, Cambridge, MA 02138 USA
| | - Jinchi Han
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139 USA
- School of Integrated Circuits, Peking University, Beijing, 100871 People’s Republic of China
| | - Zhaolong Cao
- State Key Lab of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275 People’s Republic of China
| | - Yong Zhang
- Center for Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139 USA
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044 Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044 Japan
| | - Xuewen Fu
- Ultrafast Electron Microscopy Laboratory, The MOE Key Laboratory of Weak-Light Nonlinear Photonics, School of Physics, Nankai University, Tianjin, 300071 People’s Republic of China
| | - Vladimir Bulović
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139 USA
| | | | - Edoardo Baldini
- Department of Physics, Center for Complex Quantum System, The University of Texas at Austin, Austin, TX 78712 USA
| | - Pablo Jarillo-Herrero
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139 USA
| | - Keith A. Nelson
- Department of Chemistry, Massachusetts Institute of Technology, Cambridge, MA 02139 USA
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5
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Yue L, Li J, Qi Y, Chen J, Wang X, Cao J. Auger Recombination and Carrier-Lattice Thermalization in Semiconductor Quantum Dots under Intense Excitation. NANO LETTERS 2023; 23:2578-2585. [PMID: 36972411 DOI: 10.1021/acs.nanolett.2c04804] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
A thorough understanding of the photocarrier relaxation dynamics in semiconductor quantum dots (QDs) is essential to optimize their device performance. However, resolving hot carrier kinetics under high excitation conditions with multiple excitons per dot is challenging because it convolutes several ultrafast processes, including Auger recombination, carrier-phonon scattering, and phonon thermalization. Here, we report a systematic study of the lattice dynamics induced by intense photoexcitation in PbSe QDs. By probing the dynamics from the lattice perspective using ultrafast electron diffraction together with modeling the correlated processes collectively, we can differentiate their roles in photocarrier relaxation. The results reveal that the observed lattice heating time scale is longer than that of carrier intraband relaxation obtained previously using transient optical spectroscopy. Moreover, we find that Auger recombination efficiently annihilates excitons and speeds up lattice heating. This work can be readily extended to other semiconductor QDs systems with varying dot sizes.
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Affiliation(s)
- Luye Yue
- Center for Ultrafast Science and Technology, Key Laboratory for Laser Plasmas (Ministry of Education) and School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Jingjun Li
- Center for Ultrafast Science and Technology, Key Laboratory for Laser Plasmas (Ministry of Education) and School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Yingpeng Qi
- Center for Ultrafast Science and Technology, Key Laboratory for Laser Plasmas (Ministry of Education) and School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Jie Chen
- Center for Ultrafast Science and Technology, Key Laboratory for Laser Plasmas (Ministry of Education) and School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Xuan Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Jianming Cao
- Center for Ultrafast Science and Technology, Key Laboratory for Laser Plasmas (Ministry of Education) and School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
- Physics Department and National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32310, United States
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6
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Linker T, Nomura KI, Aditya A, Fukshima S, Kalia RK, Krishnamoorthy A, Nakano A, Rajak P, Shimmura K, Shimojo F, Vashishta P. Exploring far-from-equilibrium ultrafast polarization control in ferroelectric oxides with excited-state neural network quantum molecular dynamics. SCIENCE ADVANCES 2022; 8:eabk2625. [PMID: 35319991 PMCID: PMC8942355 DOI: 10.1126/sciadv.abk2625] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/02/2021] [Accepted: 01/31/2022] [Indexed: 06/14/2023]
Abstract
Ferroelectric materials exhibit a rich range of complex polar topologies, but their study under far-from-equilibrium optical excitation has been largely unexplored because of the difficulty in modeling the multiple spatiotemporal scales involved quantum-mechanically. To study optical excitation at spatiotemporal scales where these topologies emerge, we have performed multiscale excited-state neural network quantum molecular dynamics simulations that integrate quantum-mechanical description of electronic excitation and billion-atom machine learning molecular dynamics to describe ultrafast polarization control in an archetypal ferroelectric oxide, lead titanate. Far-from-equilibrium quantum simulations reveal a marked photo-induced change in the electronic energy landscape and resulting cross-over from ferroelectric to octahedral tilting topological dynamics within picoseconds. The coupling and frustration of these dynamics, in turn, create topological defects in the form of polar strings. The demonstrated nexus of multiscale quantum simulation and machine learning will boost not only the emerging field of ferroelectric topotronics but also broader optoelectronic applications.
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Affiliation(s)
- Thomas Linker
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, CA 90089-0242, USA
| | - Ken-ichi Nomura
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, CA 90089-0242, USA
| | - Anikeya Aditya
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, CA 90089-0242, USA
| | - Shogo Fukshima
- Department of Physics, Kumamoto University, Kumamoto 860-8555, Japan
| | - Rajiv K. Kalia
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, CA 90089-0242, USA
| | - Aravind Krishnamoorthy
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, CA 90089-0242, USA
| | - Aiichiro Nakano
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, CA 90089-0242, USA
| | - Pankaj Rajak
- Amazon, 410 Terry Ave. North, Seattle, WA 98109-5210 USA
| | - Kohei Shimmura
- Department of Physics, Kumamoto University, Kumamoto 860-8555, Japan
| | - Fuyuki Shimojo
- Department of Physics, Kumamoto University, Kumamoto 860-8555, Japan
| | - Priya Vashishta
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, CA 90089-0242, USA
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7
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Guan MX, Liu XB, Chen DQ, Li XY, Qi YP, Yang Q, You PW, Meng S. Optical Control of Multistage Phase Transition via Phonon Coupling in MoTe_{2}. PHYSICAL REVIEW LETTERS 2022; 128:015702. [PMID: 35061482 DOI: 10.1103/physrevlett.128.015702] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/05/2021] [Revised: 11/28/2021] [Accepted: 12/07/2021] [Indexed: 06/14/2023]
Abstract
The temporal characters of laser-driven phase transition from 2H to 1T^{'} has been investigated in the prototype MoTe_{2} monolayer. This process is found to be induced by fundamental electron-phonon interactions, with an unexpected phonon excitation and coupling pathway closely related to the nonequilibrium relaxation of photoexcited electrons. The order-to-order phase transformation is dissected into three substages, involving energy and momentum scattering processes from optical (A_{1}^{'} and E^{'}) to acoustic phonon modes [LA(M)] in subpicosecond timescale. An intermediate metallic state along the nonadiabatic transition pathway is also identified. These results have profound implications on nonequilibrium phase engineering strategies.
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Affiliation(s)
- Meng-Xue Guan
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Xin-Bao Liu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Da-Qiang Chen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Xuan-Yi Li
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Ying-Peng Qi
- Center for Ultrafast Science and Technology, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Qing Yang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Pei-Wei You
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Sheng Meng
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
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8
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Costantini R, Cilento F, Salvador F, Morgante A, Giorgi G, Palummo M, Dell’Angela M. Photo-induced lattice distortion in 2H-MoTe2 probed by time-resolved core level photoemission. Faraday Discuss 2022; 236:429-441. [DOI: 10.1039/d1fd00105a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The technological interest in MoTe2 as a phase engineered material is related to the possibility of triggering the 2H-1T’ phase transition by optical excitation, potentially allowing for an accurate patterning...
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9
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Recent advancements and future submissions of silica core-shell nanoparticles. Int J Pharm 2021; 609:121173. [PMID: 34627997 DOI: 10.1016/j.ijpharm.2021.121173] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/04/2021] [Revised: 09/22/2021] [Accepted: 10/04/2021] [Indexed: 12/18/2022]
Abstract
The core-shell silica-based nanoparticles (CSNPs) possess outstanding properties for developing next-generation therapeutics. CSNPs provide greater surface area owing to their mesoporous structure, which offers a high opportunity for surface modification. This review highlights the potential of core-shell silica-based nanoparticle (CSNP) based injectable nanotherapeutics (INT); its role in drug delivery, biomedical imaging, light-triggered phototherapy, Plasmonic enhancers, gene delivery, magnetic hyperthermia, immunotherapy, and potential as next-generation theragnostic. Specifically, the conceptual crosstalk on modern synthetic strategies, biodistribution profiles with a mechanistic view on the therapeutics loading and release modeling are dealt in detail. The manuscript also converses the challenges associated with CSNPs, regulatory hurdles, and their current market position.
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10
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Zacharias M, Seiler H, Caruso F, Zahn D, Giustino F, Kelires PC, Ernstorfer R. Efficient First-Principles Methodology for the Calculation of the All-Phonon Inelastic Scattering in Solids. PHYSICAL REVIEW LETTERS 2021; 127:207401. [PMID: 34860053 DOI: 10.1103/physrevlett.127.207401] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/18/2021] [Revised: 04/09/2021] [Accepted: 09/22/2021] [Indexed: 06/13/2023]
Abstract
Inelastic scattering experiments are key methods for mapping the full dispersion of fundamental excitations of solids in the ground as well as nonequilibrium states. A quantitative analysis of inelastic scattering in terms of phonon excitations requires identifying the role of multiphonon processes. Here, we develop an efficient first-principles methodology for calculating the all-phonon quantum mechanical structure factor of solids. We demonstrate our method by obtaining excellent agreement between measurements and calculations of the diffuse scattering patterns of black phosphorus, showing that multiphonon processes play a substantial role. The present approach constitutes a step towards the interpretation of static and time-resolved electron, x-ray, and neutron inelastic scattering data.
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Affiliation(s)
- Marios Zacharias
- Department of Mechanical and Materials Science Engineering, Cyprus University of Technology, P.O. Box 50329, 3603 Limassol, Cyprus
| | - Hélène Seiler
- Fritz-Haber-Institut, Physical Chemistry Department, Berlin 14195, Germany
| | - Fabio Caruso
- Institut für Theoretische Physik und Astrophysik, Christian-Albrechts-Universität zu Kiel, D-24098 Kiel, Germany
| | - Daniela Zahn
- Fritz-Haber-Institut, Physical Chemistry Department, Berlin 14195, Germany
| | - Feliciano Giustino
- Oden Institute for Computational Engineering and Sciences, The University of Texas at Austin, Austin, Texas 78712, USA
- Department of Physics, The University of Texas at Austin, Austin, Texas 78712, USA
| | - Pantelis C Kelires
- Department of Mechanical and Materials Science Engineering, Cyprus University of Technology, P.O. Box 50329, 3603 Limassol, Cyprus
| | - Ralph Ernstorfer
- Fritz-Haber-Institut, Physical Chemistry Department, Berlin 14195, Germany
- Institut für Optik und Atomare Physik, Technische Universität Berlin, 10623 Berlin, Germany
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11
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Han X, Liang X, He D, Jiao L, Wang Y, Zhao H. Photocarrier Dynamics in MoTe 2 Nanofilms with 2 H and Distorted 1 T Lattice Structures. ACS APPLIED MATERIALS & INTERFACES 2021; 13:44703-44710. [PMID: 34494811 DOI: 10.1021/acsami.1c09698] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Molybdenum telluride (MoTe2), an emerging layered two-dimensional (2D) material, possesses excellent phase-changing properties. Previous studies revealed its reversible transition between 2H and 1T' phases with a transition energy as small as 35 meV. Since 1T'-MoTe2 is metallic, it can serve as an electrical contact for semiconducting 2H-MoTe2-based optoelectronic devices. Here, the photocarrier dynamics in MoTe2 nanofilms synthesized by a one-step method and with coexisting multiple phases are investigated by transient absorption measurements. Both the energy relaxation time and the recombination lifetime of the excitons are shorter in the 1T'-MoTe2 compared to its 2H phase. These results provide information on the different photocarrier dynamical properties of these two phases, which is important for future 2D optoelectronic and phase-change electronic devices based on MoTe2.
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Affiliation(s)
- Xiuxiu Han
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Xingyao Liang
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084, China
| | - Dawei He
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Liying Jiao
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084, China
| | - Yongsheng Wang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Hui Zhao
- Department of Physics and Astronomy, The University of Kansas, Lawrence, Kansas 66045, United States
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12
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Seiler H, Zahn D, Zacharias M, Hildebrandt PN, Vasileiadis T, Windsor YW, Qi Y, Carbogno C, Draxl C, Ernstorfer R, Caruso F. Accessing the Anisotropic Nonthermal Phonon Populations in Black Phosphorus. NANO LETTERS 2021; 21:6171-6178. [PMID: 34279103 PMCID: PMC8323122 DOI: 10.1021/acs.nanolett.1c01786] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/07/2021] [Revised: 07/14/2021] [Indexed: 05/21/2023]
Abstract
We combine ultrafast electron diffuse scattering experiments and first-principles calculations of the coupled electron-phonon dynamics to provide a detailed momentum-resolved picture of lattice thermalization in black phosphorus. The measurements reveal the emergence of highly anisotropic nonthermal phonon populations persisting for several picoseconds after exciting the electrons with a light pulse. Ultrafast dynamics simulations based on the time-dependent Boltzmann formalism are supplemented by calculations of the structure factor, defining an approach to reproduce the experimental signatures of nonequilibrium structural dynamics. The combination of experiments and theory enables us to identify highly anisotropic electron-phonon scattering processes as the primary driving force of the nonequilibrium lattice dynamics in black phosphorus. Our approach paves the way toward unravelling and controlling microscopic energy flows in two-dimensional materials and van der Waals heterostructures, and may be extended to other nonequilibrium phenomena involving coupled electron-phonon dynamics such as superconductivity, phase transitions, or polaron physics.
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Affiliation(s)
- Hélène Seiler
- Fritz
Haber Institute of the Max Planck Society, Faradayweg 4-6, 14195 Berlin, Germany
| | - Daniela Zahn
- Fritz
Haber Institute of the Max Planck Society, Faradayweg 4-6, 14195 Berlin, Germany
| | - Marios Zacharias
- Fritz
Haber Institute of the Max Planck Society, Faradayweg 4-6, 14195 Berlin, Germany
- Department
of Mechanical and Materials Science Engineering, Cyprus University of Technology, P.O.
Box 50329, 3603 Limassol, Cyprus
| | | | - Thomas Vasileiadis
- Fritz
Haber Institute of the Max Planck Society, Faradayweg 4-6, 14195 Berlin, Germany
| | - Yoav William Windsor
- Fritz
Haber Institute of the Max Planck Society, Faradayweg 4-6, 14195 Berlin, Germany
| | - Yingpeng Qi
- Fritz
Haber Institute of the Max Planck Society, Faradayweg 4-6, 14195 Berlin, Germany
| | - Christian Carbogno
- Fritz
Haber Institute of the Max Planck Society, Faradayweg 4-6, 14195 Berlin, Germany
| | - Claudia Draxl
- Institut
für Physik and IRIS Adlershof, Humboldt-Universität
zu Berlin, Berlin, Germany
| | - Ralph Ernstorfer
- Fritz
Haber Institute of the Max Planck Society, Faradayweg 4-6, 14195 Berlin, Germany
| | - Fabio Caruso
- Institut
für Theoretische Physik und Astrophysik, Christian-Albrechts-Universität zu Kiel, D-24098 Kiel, Germany
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13
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Otto MR, Pöhls JH, René de Cotret LP, Stern MJ, Sutton M, Siwick BJ. Mechanisms of electron-phonon coupling unraveled in momentum and time: The case of soft phonons in TiSe 2. SCIENCE ADVANCES 2021; 7:7/20/eabf2810. [PMID: 33980488 PMCID: PMC8115930 DOI: 10.1126/sciadv.abf2810] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/15/2020] [Accepted: 03/26/2021] [Indexed: 06/12/2023]
Abstract
The complex coupling between charge carriers and phonons is responsible for diverse phenomena in condensed matter. We apply ultrafast electron diffuse scattering to unravel electron-phonon coupling phenomena in 1T-TiSe2 in both momentum and time. We are able to distinguish effects due to the real part of the many-body bare electronic susceptibility, [Formula: see text], from those due to the electron-phonon coupling vertex, g q , by following the response of semimetallic (normal-phase) 1T-TiSe2 to the selective photo-doping of carriers into the electron pocket at the Fermi level. Quasi-impulsive and wave vector-specific renormalization of soft zone-boundary phonon frequencies (stiffening) is observed, followed by wave vector-independent electron-phonon equilibration. These results unravel the underlying mechanisms driving the phonon softening that is associated with the charge density wave transition at lower temperatures.
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Affiliation(s)
- Martin R Otto
- Department of Physics, Center for the Physics of Materials, McGill University, 3600 rue Université, Montréal, Québec H3A 2T8, Canada
| | - Jan-Hendrik Pöhls
- Department of Physics, Center for the Physics of Materials, McGill University, 3600 rue Université, Montréal, Québec H3A 2T8, Canada
| | - Laurent P René de Cotret
- Department of Physics, Center for the Physics of Materials, McGill University, 3600 rue Université, Montréal, Québec H3A 2T8, Canada
| | - Mark J Stern
- Department of Physics, Center for the Physics of Materials, McGill University, 3600 rue Université, Montréal, Québec H3A 2T8, Canada
| | - Mark Sutton
- Department of Physics, Center for the Physics of Materials, McGill University, 3600 rue Université, Montréal, Québec H3A 2T8, Canada
| | - Bradley J Siwick
- Department of Physics, Center for the Physics of Materials, McGill University, 3600 rue Université, Montréal, Québec H3A 2T8, Canada.
- Department of Chemistry, McGill University, 801 rue Sherbrooke Ouest, Montréal, Québec H3A 0B8, Canada
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14
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Abstract
The coupled nonequilibrium dynamics of electrons and phonons in monolayer MoS2 is investigated by combining first-principles calculations of the electron-phonon and phonon-phonon interactions with the time-dependent Boltzmann equation. Strict phase-space constraints in the electron-phonon scattering are found to influence profoundly the decay path of excited electrons and holes, restricting the emission of phonons to crystal momenta close to a few high-symmetry points in the Brillouin zone. As a result of momentum selectivity in the phonon emission, the nonequilibrium lattice dynamics is characterized by the emergence of a highly anisotropic population of phonons in reciprocal space, which persists for up to 10 ps until thermal equilibrium is restored by phonon-phonon scattering. Achieving control of the nonequilibrium dynamics of the lattice may provide unexplored opportunities to selectively enhance the phonon population of two-dimensional crystals and, thereby, transiently tailor electron-phonon interactions over subpicosecond time scales.
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Affiliation(s)
- Fabio Caruso
- Institut für Theoretische Physik und Astrophysik, Christian-Albrechts-Universität zu Kiel, Kiel, Germany
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15
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Attar AR, Chang HT, Britz A, Zhang X, Lin MF, Krishnamoorthy A, Linker T, Fritz D, Neumark DM, Kalia RK, Nakano A, Ajayan P, Vashishta P, Bergmann U, Leone SR. Simultaneous Observation of Carrier-Specific Redistribution and Coherent Lattice Dynamics in 2H-MoTe 2 with Femtosecond Core-Level Spectroscopy. ACS NANO 2020; 14:15829-15840. [PMID: 33085888 DOI: 10.1021/acsnano.0c06988] [Citation(s) in RCA: 19] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We employ few-femtosecond extreme ultraviolet (XUV) transient absorption spectroscopy to reveal simultaneously the intra- and interband carrier relaxation and the light-induced structural dynamics in nanoscale thin films of layered 2H-MoTe2 semiconductor. By interrogating the valence electronic structure via localized Te 4d (39-46 eV) and Mo 4p (35-38 eV) core levels, the relaxation of the photoexcited hole distribution is directly observed in real time. We obtain hole thermalization and cooling times of 15 ± 5 fs and 380 ± 90 fs, respectively, and an electron-hole recombination time of 1.5 ± 0.1 ps. Furthermore, excitations of coherent out-of-plane A1g (5.1 THz) and in-plane E1g (3.7 THz) lattice vibrations are visualized through oscillations in the XUV absorption spectra. By comparison to Bethe-Salpeter equation simulations, the spectral changes are mapped to real-space excited-state displacements of the lattice along the dominant A1g coordinate. By directly and simultaneously probing the excited carrier distribution dynamics and accompanying femtosecond lattice displacement in 2H-MoTe2 within a single experiment, our work provides a benchmark for understanding the interplay between electronic and structural dynamics in photoexcited nanomaterials.
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Affiliation(s)
- Andrew R Attar
- Stanford PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
- Linac Coherent Light Source, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Hung-Tzu Chang
- Department of Chemistry, University of California, Berkeley, California 94720, United States
| | - Alexander Britz
- Stanford PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
- Linac Coherent Light Source, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Xiang Zhang
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Ming-Fu Lin
- Linac Coherent Light Source, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Aravind Krishnamoorthy
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, California 90089, United States
| | - Thomas Linker
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, California 90089, United States
| | - David Fritz
- Linac Coherent Light Source, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Daniel M Neumark
- Department of Chemistry, University of California, Berkeley, California 94720, United States
- Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Rajiv K Kalia
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, California 90089, United States
| | - Aiichiro Nakano
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, California 90089, United States
| | - Pulickel Ajayan
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Priya Vashishta
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, California 90089, United States
| | - Uwe Bergmann
- Stanford PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Stephen R Leone
- Department of Chemistry, University of California, Berkeley, California 94720, United States
- Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Department of Physics, University of California, Berkeley, California 94720, United States
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16
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Linker T, Tiwari S, Fukushima S, Kalia RK, Krishnamoorthy A, Nakano A, Nomura KI, Shimamura K, Shimojo F, Vashishta P. Optically Induced Three-Stage Picosecond Amorphization in Low-Temperature SrTiO 3. J Phys Chem Lett 2020; 11:9605-9612. [PMID: 33124829 DOI: 10.1021/acs.jpclett.0c02873] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Photoexcitation can drastically modify potential energy surfaces of materials, allowing access to hidden phases. SrTiO3 (STO) is an ideal material for photoexcitation studies due to its prevalent use in nanostructured devices and its rich range of functionality-changing lattice motions. Recently, a hidden ferroelectric phase in STO was accessed through weak terahertz excitation of polarization-inducing phonon modes. In contrast, whereas strong laser excitation was shown to induce nanostructures on STO surfaces and control nanopolarization patterns in STO-based heterostructures, the dynamic pathways underlying these optically induced structural changes remain unknown. Here nonadiabatic quantum molecular dynamics reveals picosecond amorphization in photoexcited STO at temperatures as low as 10 K. The three-stage pathway involves photoinduced charge transfer and optical phonon activation followed by nonlinear charge and lattice dynamics that ultimately lead to amorphization. This atomistic understanding could guide not only rational laser nanostructuring of STO but also broader "quantum materials on demand" technologies.
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Affiliation(s)
- Thomas Linker
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, California 90089-0242, United States
| | - Subodh Tiwari
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, California 90089-0242, United States
| | - Shogo Fukushima
- Department of Physics, Kumamoto University, Kumamoto 860-8555, Japan
| | - Rajiv K Kalia
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, California 90089-0242, United States
| | - Aravind Krishnamoorthy
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, California 90089-0242, United States
| | - Aiichiro Nakano
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, California 90089-0242, United States
| | - Ken-Ichi Nomura
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, California 90089-0242, United States
| | - Kohei Shimamura
- Department of Physics, Kumamoto University, Kumamoto 860-8555, Japan
| | - Fuyuki Shimojo
- Department of Physics, Kumamoto University, Kumamoto 860-8555, Japan
| | - Priya Vashishta
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, California 90089-0242, United States
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17
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Reisbick SA, Zhang Y, Flannigan DJ. Influence of Discrete Defects on Observed Acoustic-Phonon Dynamics in Layered Materials Probed with Ultrafast Electron Microscopy. J Phys Chem A 2020; 124:1877-1884. [PMID: 32068411 DOI: 10.1021/acs.jpca.9b12026] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/15/2022]
Abstract
The structural anisotropy of layered materials leads to disparate lattice responses along different crystallographic directions following femtosecond photoexcitation. Ultrafast scattering methods are well-suited to resolving such responses, though probe size and specimen structure and morphology must be considered when interpreting results. Here we use ultrafast electron microscopy (UEM) imaging and diffraction to study the influence of individual multilayer terraces and few-layer step-edges on acoustic-phonon dynamics in 1T-TaS2 and 2H-MoS2. In TaS2, we find that a multilayer terrace produces distinct, localized responses arising from thickness-dependent c-axis phonon dynamics. Convolution of the responses is demonstrated with ultrafast selected-area diffraction by limiting the probe size and training it on the region of interest. This results in a reciprocal-space frequency response that is a convolution of the spatially separated behaviors. Sensitivity of phonon dynamics to few-layer step-edges in MoS2 and the capability of UEM imaging to resolve the influence of such defects are also demonstrated. Spatial frequency maps from the UEM image series reveal regions separated by a four-layer step-edge having 60.0 GHz and 63.3 GHz oscillation frequencies, again linked to c-axis phonon propagation. As with ultrafast diffraction, signal convolution is demonstrated by continuous increase of the size of the selected region of interest used in the analysis.
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Affiliation(s)
- Spencer A Reisbick
- Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Avenue SE, Minneapolis, Minnesota 55455, United States
| | - Yichao Zhang
- Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Avenue SE, Minneapolis, Minnesota 55455, United States
| | - David J Flannigan
- Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Avenue SE, Minneapolis, Minnesota 55455, United States
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18
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Zhang Y, Flannigan DJ. Observation of Anisotropic Strain-Wave Dynamics and Few-Layer Dephasing in MoS 2 with Ultrafast Electron Microscopy. NANO LETTERS 2019; 19:8216-8224. [PMID: 31658814 DOI: 10.1021/acs.nanolett.9b03596] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/06/2023]
Abstract
The large elastic strains that can be sustained by transition metal dichalcogenides (TMDs), and the sensitivity of electronic properties to that strain, make these materials attractive targets for tunable optoelectronic devices. Defects have also been shown to influence the optical and electronic properties, characteristics that are especially important to understand for applications requiring high precision and sensitivity. Importantly, photoexcitation of TMDs is known to generate transient strain effects but the associated intralayer and interlayer low-frequency (tens of GHz) acoustic-phonon modes are largely unexplored, especially in relation to defects common to such materials. Here, with femtosecond electron imaging in an ultrafast electron microscope (UEM), we directly observe distinct photoexcited strain-wave dynamics specific to both the ab basal planes and the principal c-axis crystallographic stacking direction in multilayer 2H-MoS2, and we elucidate the microscopic interconnectedness of these modes to one another and to discrete defects, such as few-layer crystal step edges. By probing 3D structural information within a nanometer-picosecond 2D projected UEM image series, we were able to observe the excitation and evolution of both modes simultaneously. In this way, we found evidence of a delay between mode excitations; initiation of the interlayer (c-axis) strain-wave mode precedes the intralayer (ab plane) mode by 2.4 ps. Further, the intralayer mode is preferentially excited at free basal-plane edges, thus suggesting the initial impulsive structural changes along the c-axis direction and the increased freedom of motion of the MoS2 layer edges at terraces and step edges combine to launch in-plane strain waves at the longitudinal speed of sound (here observed to be 7.8 nm/ps). Sensitivity of the c-axis mode to layer number is observed through direct imaging of a picosecond spatiotemporal dephasing of the lattice oscillation in discrete crystal regions separated by a step edge consisting of four MoS2 layers. These results uncover new insights into the fundamental nanoscale structural responses of layered materials to ultrafast photoexcitation and illustrate the influence defects common to these materials have on behaviors that may impact the emergent optoelectronic properties.
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Affiliation(s)
- Yichao Zhang
- Department of Chemical Engineering and Materials Science , University of Minnesota , 421 Washington Avenue SE , Minneapolis , Minnesota 55455 , United States
| | - David J Flannigan
- Department of Chemical Engineering and Materials Science , University of Minnesota , 421 Washington Avenue SE , Minneapolis , Minnesota 55455 , United States
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