Single Rare-Earth Ions as Atomic-Scale Probes in Ultrascaled Transistors

3D-Mapping and Manipulation of Photocurrent in an Optoelectronic Diamond Device

Establishing connections between material impurities and charge transport properties in emerging electronic and quantum materials, such as wide-bandgap semiconductors, demands new diagnostic methods tailored to these unique systems. Many such materials host optically-active defect centers which offer a powerful in situ characterization system, but one that typically relies on the weak spin-electric field coupling to measure electronic phenomena. In this work, charge-state sensitive optical microscopy is combined with photoelectric detection of an array of nitrogen-vacancy (NV) centers to directly image the flow of charge carriers inside a diamond optoelectronic device, in 3D and with temporal resolution. Optical control is used to change the charge state of background impurities inside the diamond on-demand, resulting in drastically different current flow such as filamentary channels nucleating from specific, defective regions of the device. Conducting channels that control carrier flow, key steps toward optically reconfigurable, wide-bandgap optoelectronics are then engineered using light. This work might be extended to probe other wide-bandgap semiconductors (SiC, GaN) relevant to present and emerging electronic and quantum technologies.

Bandgap Engineering of Erbium-Metallofullerenes toward Switchable Photoluminescence

Encapsulating photoluminescent lanthanide ions like erbium (Er) into fullerene cages affords photoluminescent endohedral metallofullerenes (EMFs). Few reported photoluminescent Er-EMFs are all based on encapsulation of multiple (two to three) metal atoms, whereas mono-Er-EMFs exemplified by Er@C82 are not photoluminescent due to its narrow optical bandgap. Herein, by entrapping an Er-cyanide cluster into various C82 cages to form novel Er-monometallic cyanide clusterfullerenes (CYCFs), ErCN@C82 (C2 (5), Cs (6), and C2 v (9)), the photoluminescent properties of CYCFs are investigated, and obvious near-infrared (NIR) photoluminescence only is observed for ErCN@C2 (5)-C82 . Combined with a comparative photoluminescence study of three medium-bandgap di-Er-EMFs, including Er2 @Cs (6)-C82 , Er2 O@Cs (6)-C82 , and Er2 C2 @Cs (6)-C82 , this study proposes that the optical bandgap can be used as a simple criterion for switching the photoluminescence of Er-EMFs, and the bandgap threshold is determined to be between 0.83 and 0.74 eV. Furthermore, the photoluminescent patterns of these three di-Er-EMFs differ dramatically. It is found that the location of the Er atom within the same Cs (6)-C82 cage is almost fixed and independent on the endo-unit; thus the previous statement on the key role of metal position in photoluminescence of di-Er-EMFs seems erroneous, and the geometric configuration of the endo-unit, especially the bridging mode of two Er ions, is decisive instead.

Visible and near-infrared photoluminescence of a supramolecular complex constructed from a cycloparaphenylene nanoring and an erbium metallofullerene

Erbium metallofullerenes exhibit near-infrared photoluminescence from the Er³⁺ ions, which has potential applications in telecommunications, optical devices and bioscience. In this manuscript, we report the construction of a supramolecular complex of metallofullerene Er₃N@C₈₀ and cycloparaphenylene [12]CPP to adjust the near-infrared photoluminescence of Er₃N@C₈₀ through host-guest interactions. Moreover, this supramolecular complex shows a multiwavelength luminescence property. Mass spectrometry, electrochemical measurements and proton NMR spectroscopy were used to characterize the structure of Er₃N@C₈₀⊂[12]CPP. The electrochemical results of Er₃N@C₈₀⊂[12]CPP show the negatively shifted redox potentials compared to pristine Er₃N@C₈₀ and the ¹H NMR signals of Er₃N@C₈₀⊂[12]CPP shift upfield compared to pristine [12]CPP. More importantly, the photoluminescence spectra show that the [12]CPP nanoring can affect the near-infrared emission of encapsulated Er³⁺ ions in Er₃N@C₈₀, with the characteristic emission peak of Er³⁺ at 1.5 μm being broadened and enhanced in the Er₃N@C₈₀⊂[12]CPP complex, while the fluorescence lifetime of Er³⁺ also becomes longer after assembly formation. Furthermore, the Er₃N@C₈₀ guest also can influence the photoluminescence property of [12]CPP, whose emission peaks exhibit a slight blue-shift in the Er₃N@C₈₀⊂[12]CPP complex. This study illustrates that the outer nanoring can be employed to adjust the photoluminescence of the encapsulated Er³⁺ ion in Er₃N@C₈₀.

Time-Resolved Photoionization Detection of a Single Er3+ Ion in Silicon

The detection of charge trap ionization induced by resonant excitation enables spectroscopy on single Er³⁺ ions in silicon nanotransistors. In this work, a time-resolved detection method is developed to investigate the resonant excitation and relaxation of a single Er³⁺ ion in silicon. The time-resolved detection is based on a long-lived current signal with a tunable reset and allows the measurement under stronger and shorter resonant excitation in comparison to time-averaged detection. Specifically, the short-pulse study gives an upper bound of 23.7 μs on the decay time of the ⁴I_13/2 state of the Er³⁺ ion. The fast decay and the tunable reset allow faster repetition of the single-ion detection, which is attractive for implementing this method in large-scale quantum systems of single optical centers. The findings on the detection mechanism and dynamics also provide an important basis for applying this technique to detect other single optical centers in solids.

High-fidelity single-shot readout of single electron spin in diamond with spin-to-charge conversion

High fidelity single-shot readout of qubits is a crucial component for fault-tolerant quantum computing and scalable quantum networks. In recent years, the nitrogen-vacancy (NV) center in diamond has risen as a leading platform for the above applications. The current single-shot readout of the NV electron spin relies on resonance fluorescence method at cryogenic temperature. However, the spin-flip process interrupts the optical cycling transition, therefore, limits the readout fidelity. Here, we introduce a spin-to-charge conversion method assisted by near-infrared (NIR) light to suppress the spin-flip error. This method leverages high spin-selectivity of cryogenic resonance excitation and flexibility of photoionization. We achieve an overall fidelity > 95% for the single-shot readout of an NV center electron spin in the presence of high strain and fast spin-flip process. With further improvements, this technique has the potential to achieve spin readout fidelity exceeding the fault-tolerant threshold, and may also find applications on integrated optoelectronic devices.

The NV centre in diamond has been used extensively in quantum information processing; however fault-tolerant readout of its spin remains challenging. Here, Zhang et al demonstrate a robust scheme that achieves high-fidelity readout via spin to charge conversion.

Nanoscale Electrometry Based on a Magnetic-Field-Resistant Spin Sensor

The nitrogen-vacancy (NV) center is a potential atomic-scale spin sensor for electric field sensing. However, its natural susceptibility to the magnetic field hinders effective detection of the electric field. Here we propose a robust electrometric method utilizing continuous dynamic decoupling (CDD) technique. During the CDD period, the NV center evolves in a dressed frame, where the sensor is resistant to magnetic fields but remains sensitive to electric fields. As an example, we use this method to isolate the electric noise from a complex electromagnetic environment near diamond surface via measuring the dephasing rate between dressed states. By reducing the surface electric noise with different covered liquids, we observe an unambiguous relation between the dephasing rate and the relative dielectric permittivity of the liquid, which enables a quantitative investigation of electric noise model near the diamond surface.