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LaDuca Z, Samanta T, Hagopian N, Jung T, Su K, Genser K, Rabe KM, Voyles PM, Arnold MS, Kawasaki JK. Cold Seeded Epitaxy and Flexomagnetism in GdAuGe Membranes Exfoliated From Graphene/Ge(111). NANO LETTERS 2024; 24:10284-10289. [PMID: 39133900 DOI: 10.1021/acs.nanolett.4c02731] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/22/2024]
Abstract
Remote and van der Waals epitaxy are promising approaches for synthesizing single crystalline membranes for flexible electronics and discovery of new properties via extreme strain; however, a fundamental challenge is that most materials do not wet the graphene surface. We develop a cold seed approach for synthesizing smooth intermetallic films on graphene that can be exfoliated to form few nanometer thick single crystalline membranes. Our seeded GdAuGe films have narrow X-ray rocking curve widths of 9-24 arc seconds, which is 2 orders of magnitude lower than their counterparts grown by typical high temperature methods, and have atomically sharp interfaces observed by transmission electron microscopy. Upon exfoliation and rippling, strain gradients in GdAuGe membranes induce an antiferromagnetic to ferri/ferromagnetic transition. Our smooth, ultrathin membranes provide a clean platform for discovering new flexomagnetic effects in quantum materials.
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Affiliation(s)
- Zachary LaDuca
- Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States of America
| | - Tamalika Samanta
- Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States of America
| | - Nicholas Hagopian
- Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States of America
| | - Taehwan Jung
- Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States of America
| | - Katherine Su
- Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States of America
| | - Konrad Genser
- Physics and Astronomy, Rutgers University, New Brunswick, New Jersey 08854, United States of America
| | - Karin M Rabe
- Physics and Astronomy, Rutgers University, New Brunswick, New Jersey 08854, United States of America
| | - Paul M Voyles
- Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States of America
| | - Michael S Arnold
- Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States of America
| | - Jason K Kawasaki
- Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States of America
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2
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Lee S, Song MK, Zhang X, Suh JM, Ryu JE, Kim J. Mixed-Dimensional Integration of 3D-on-2D Heterostructures for Advanced Electronics. NANO LETTERS 2024. [PMID: 39037750 DOI: 10.1021/acs.nanolett.4c02663] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/23/2024]
Abstract
Two-dimensional (2D) materials have garnered significant attention due to their exceptional properties requisite for next-generation electronics, including ultrahigh carrier mobility, superior mechanical flexibility, and unusual optical characteristics. Despite their great potential, one of the major technical difficulties toward lab-to-fab transition exists in the seamless integration of 2D materials with classic material systems, typically composed of three-dimensional (3D) materials. Owing to the self-passivated nature of 2D surfaces, it is particularly challenging to achieve well-defined interfaces when forming 3D materials on 2D materials (3D-on-2D) heterostructures. Here, we comprehensively review recent progress in 3D-on-2D incorporation strategies, ranging from direct-growth- to layer-transfer-based approaches and from non-epitaxial to epitaxial integration methods. Their technological advances and obstacles are rigorously discussed to explore optimal, yet viable, integration strategies of 3D-on-2D heterostructures. We conclude with an outlook on mixed-dimensional integration processes, identifying key challenges in state-of-the-art technology and suggesting potential opportunities for future innovation.
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Affiliation(s)
- Sangho Lee
- Department of Mechanical Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
| | - Min-Kyu Song
- Department of Mechanical Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
| | - Xinyuan Zhang
- Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
- Department of Materials Science and Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
| | - Jun Min Suh
- Department of Mechanical Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
| | - Jung-El Ryu
- Department of Mechanical Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
| | - Jeehwan Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
- Department of Materials Science and Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
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3
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Park BI, Kim J, Lu K, Zhang X, Lee S, Suh JM, Kim DH, Kim H, Kim J. Remote Epitaxy: Fundamentals, Challenges, and Opportunities. NANO LETTERS 2024; 24:2939-2952. [PMID: 38477054 DOI: 10.1021/acs.nanolett.3c04465] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/14/2024]
Abstract
Advanced heterogeneous integration technologies are pivotal for next-generation electronics. Single-crystalline materials are one of the key building blocks for heterogeneous integration, although it is challenging to produce and integrate these materials. Remote epitaxy is recently introduced as a solution for growing single-crystalline thin films that can be exfoliated from host wafers and then transferred onto foreign platforms. This technology has quickly gained attention, as it can be applied to a wide variety of materials and can realize new functionalities and novel application platforms. Nevertheless, remote epitaxy is a delicate process, and thus, successful execution of remote epitaxy is often challenging. Here, we elucidate the mechanisms of remote epitaxy, summarize recent breakthroughs, and discuss the challenges and solutions in the remote epitaxy of various material systems. We also provide a vision for the future of remote epitaxy for studying fundamental materials science, as well as for functional applications.
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Affiliation(s)
- Bo-In Park
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Jekyung Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Kuangye Lu
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Xinyuan Zhang
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Sangho Lee
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Jun Min Suh
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Dong-Hwan Kim
- School of Chemical Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
- Biomedical Institute for Convergence at SKKU (BICS), Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Hyunseok Kim
- Department of Electrical and Computer Engineering, University of Illinois Urbana-Champaign, Urbana, Illinois 61801, United States
- Nick Holonyak, Jr. Micro and Nanotechnology Laboratory, University of Illinois Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Jeehwan Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
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Chang CS, Kim KS, Park BI, Choi J, Kim H, Jeong J, Barone M, Parker N, Lee S, Zhang X, Lu K, Suh JM, Kim J, Lee D, Han NM, Moon M, Lee YS, Kim DH, Schlom DG, Hong YJ, Kim J. Remote epitaxial interaction through graphene. SCIENCE ADVANCES 2023; 9:eadj5379. [PMID: 37862426 DOI: 10.1126/sciadv.adj5379] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/02/2023] [Accepted: 09/19/2023] [Indexed: 10/22/2023]
Abstract
The concept of remote epitaxy involves a two-dimensional van der Waals layer covering the substrate surface, which still enable adatoms to follow the atomic motif of the underlying substrate. The mode of growth must be carefully defined as defects, e.g., pinholes, in two-dimensional materials can allow direct epitaxy from the substrate, which, in combination with lateral epitaxial overgrowth, could also form an epilayer. Here, we show several unique cases that can only be observed for remote epitaxy, distinguishable from other two-dimensional material-based epitaxy mechanisms. We first grow BaTiO3 on patterned graphene to establish a condition for minimizing epitaxial lateral overgrowth. By observing entire nanometer-scale nuclei grown aligned to the substrate on pinhole-free graphene confirmed by high-resolution scanning transmission electron microscopy, we visually confirm that remote epitaxy is operative at the atomic scale. Macroscopically, we also show variations in the density of GaN microcrystal arrays that depend on the ionicity of substrates and the number of graphene layers.
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Affiliation(s)
- Celesta S Chang
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Ki Seok Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Bo-In Park
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Joonghoon Choi
- GRI-TPC International Research Center and Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, Republic of Korea
| | - Hyunseok Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Junseok Jeong
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Matthew Barone
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14850, USA
| | - Nicholas Parker
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14850, USA
| | - Sangho Lee
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Xinyuan Zhang
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Kuangye Lu
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Jun Min Suh
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Jekyung Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Doyoon Lee
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Ne Myo Han
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Mingi Moon
- Department of Mechanical Engineering, Seoul National University, Seoul, Republic of Korea
| | - Yun Seog Lee
- Department of Mechanical Engineering, Seoul National University, Seoul, Republic of Korea
| | - Dong-Hwan Kim
- School of Chemical Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
- Biomedical Institute for Convergence at SKKU (BICS), Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Darrell G Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14850, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY 14853, USA
- Leibniz-Institut für Kristallzüchtung, 12489 Berlin, Germany
| | - Young Joon Hong
- GRI-TPC International Research Center and Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, Republic of Korea
| | - Jeehwan Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
- Microelectronic Technology Laboratory, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
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Wang Y, Qu Y, Xu Y, Li D, Lu Z, Li J, Su X, Wang G, Shi L, Zeng X, Wang J, Cao B, Xu K. Modulation of Remote Epitaxial Heterointerface by Graphene-Assisted Attenuative Charge Transfer. ACS NANO 2023; 17:4023-4033. [PMID: 36744849 DOI: 10.1021/acsnano.3c00026] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Remote epitaxy (RE), substrate polarity can "penetrate" two-dimensional materials (2DMs) and act on the epi-layer, showing a prospective universal growth strategy. However, essentially, the role that 2DMs plays in RE has not been deeply investigated so far. Here, the RE of single-crystal films on the weakest polarity/iconicity substrate is realized to reveal its essence physical properties. Graphene facilitates attenuative charge transfer (ACT) from a substrate to epi-layer to construct remote interactions. Interfacial atoms are assembled into "incommensurate" epitaxial relationships through graphene to reduce misfit dislocations in the epi-layer. Moreover, graphene reduces the atomic migration barrier, leading to a tendency toward a "layer-by-layer" growth mode. Such film growth mode is different with the conventional epitaxy (CE), and it is beneficial for the fast growth of epi-layers and the reduction of dislocations at coalescence boundaries. The insightful revelation of the role of graphene reveals the interface physics of RE and provides a more valuable guide to using 2DMs to expand three-dimensional materials (3DMs) for application in devices.
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Affiliation(s)
- Yuning Wang
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, Anhui230026, China
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu215123, China
| | - Yipu Qu
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, Anhui230026, China
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu215123, China
- School of Electrical and Information Engineering, Zhengzhou University, Zhengzhou, Henan450001, China
| | - Yu Xu
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu215123, China
- Suzhou Nanowin Science and Technology Co., Ltd., Suzhou215123, China
| | - Didi Li
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu215123, China
- School of Physical Science and Technology, Shanghai Tech University, Shanghai201210, China
| | - Zhengqian Lu
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu215123, China
- School of Electrical and Information Engineering, Zhengzhou University, Zhengzhou, Henan450001, China
| | - Jianjie Li
- School of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, Jiangsu215006, China
- Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province & Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou, Jiangsu215006, China
| | - Xujun Su
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu215123, China
- Shenyang National Laboratory for Materials Science, Shenyang, Liaoning110010, China
| | - Guobin Wang
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu215123, China
- Shenyang National Laboratory for Materials Science, Shenyang, Liaoning110010, China
| | - Lin Shi
- School of Materials Science and Engineering, Yancheng Institute of Technology, Yancheng224051, China
| | - Xionghui Zeng
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu215123, China
| | - Jianfeng Wang
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu215123, China
- Suzhou Nanowin Science and Technology Co., Ltd., Suzhou215123, China
- Shenyang National Laboratory for Materials Science, Shenyang, Liaoning110010, China
| | - Bing Cao
- School of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, Jiangsu215006, China
- Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province & Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou, Jiangsu215006, China
| | - Ke Xu
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu215123, China
- Suzhou Nanowin Science and Technology Co., Ltd., Suzhou215123, China
- Shenyang National Laboratory for Materials Science, Shenyang, Liaoning110010, China
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6
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Kim JY, Ju X, Ang KW, Chi D. Van der Waals Layer Transfer of 2D Materials for Monolithic 3D Electronic System Integration: Review and Outlook. ACS NANO 2023; 17:1831-1844. [PMID: 36655854 DOI: 10.1021/acsnano.2c10737] [Citation(s) in RCA: 12] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Two-dimensional materials (2DMs) have attracted a great deal of interest due to their immense potential for scientific breakthroughs and technological innovations. While some 2D transition metal dichalcogenides (TMDC) such as MoS2 and WS2 are considered as the ultimate channel materials in unltrascaled transistors as replacements for Si, there has also been increasing interest in the monolithic 3D integration of 2DMs on the Si CMOS platform or in flexible electronics as back-end-of-line transistors, memory devices/selectors, and sensors, taking advantage of 2DM properties such as a high current driving capability with low leakage current, nonvolatile switching characteristics, a large surface-to-volume ratio, and a tunable bandgap. However, the realization of both of these scenarios critically depends on the development of manufacturing-viable high-yield 2DM layers transfer from the growth substrate to the Si, since the growth of high-quality 2DM layers often requires a high-temperature growth process on template substrates. Motivated by this, extensive efforts have been made by the 2DM research community to develop various 2DM layer transfer methods, leveraging the van der Waals transfer capability of the layer-structured 2DMs. These efforts have led to a number of successful demonstrations of wafer-scale 2D TMDC layer transfer, while 2DM-enabled template growth/transfer of some functional bulk materials such as III-V, Ge, and AlN has also been demonstrated. This review surveys and compares different 2DM transfer methods developed recently, with a focus on large-area 2D TMDC film transfer along with an introduction of 2DM template-assisted van der Waals growth/transfer of non-2D thin films. We will also briefly present an outlook of our envisioned multifunctionalities in 3D integrated electronic systems enabled by monolithic 3D integration of 2DMs and III-V via van der Waals transfer and discuss possible technology options for overcoming remaining challenges.
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Affiliation(s)
- Jun-Young Kim
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, 2 Fusionopolis Way, Singapore 138634, Singapore
| | - Xin Ju
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, 2 Fusionopolis Way, Singapore 138634, Singapore
| | - Kah-Wee Ang
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, 2 Fusionopolis Way, Singapore 138634, Singapore
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583, Singapore
| | - Dongzhi Chi
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, 2 Fusionopolis Way, Singapore 138634, Singapore
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Wang H, Wang H, Sun R, Yao L, Zuo H, Ruan F, Feng Q, Wang J. Preparation of hierarchical micro-meso porous carbon and carbon nanofiber from polyacrylonitrile/polysulfone polymer via one-step carbonization for supercapacitor electrodes. Electrochim Acta 2023. [DOI: 10.1016/j.electacta.2023.141827] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/03/2023]
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Manzo S, Strohbeen PJ, Lim ZH, Saraswat V, Du D, Xu S, Pokharel N, Mawst LJ, Arnold MS, Kawasaki JK. Pinhole-seeded lateral epitaxy and exfoliation of GaSb films on graphene-terminated surfaces. Nat Commun 2022; 13:4014. [PMID: 35851271 PMCID: PMC9293962 DOI: 10.1038/s41467-022-31610-y] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/05/2021] [Accepted: 06/17/2022] [Indexed: 11/25/2022] Open
Abstract
Remote epitaxy is a promising approach for synthesizing exfoliatable crystalline membranes and enabling epitaxy of materials with large lattice mismatch. However, the atomic scale mechanisms for remote epitaxy remain unclear. Here we experimentally demonstrate that GaSb films grow on graphene-terminated GaSb (001) via a seeded lateral epitaxy mechanism, in which pinhole defects in the graphene serve as selective nucleation sites, followed by lateral epitaxy and coalescence into a continuous film. Remote interactions are not necessary in order to explain the growth. Importantly, the small size of the pinholes permits exfoliation of continuous, free-standing GaSb membranes. Due to the chemical similarity between GaSb and other III-V materials, we anticipate this mechanism to apply more generally to other materials. By combining molecular beam epitaxy with in-situ electron diffraction and photoemission, plus ex-situ atomic force microscopy and Raman spectroscopy, we track the graphene defect generation and GaSb growth evolution a few monolayers at a time. Our results show that the controlled introduction of nanoscale openings in graphene provides an alternative route towards tuning the growth and properties of 3D epitaxial films and membranes on 2D material masks. Remote epitaxy represents a promising method for the synthesis of thin films on lattice-mismatched substrates, but its atomic-scale mechanisms are still unclear. Here, the authors demonstrate the growth of exfoliatable GaSb films on graphene-terminated GaSb (001) via seeded lateral epitaxy, showing that pinhole defects in graphene serve as selective nucleation sites.
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Affiliation(s)
- Sebastian Manzo
- Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA
| | - Patrick J Strohbeen
- Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA
| | - Zheng Hui Lim
- Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA
| | - Vivek Saraswat
- Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA
| | - Dongxue Du
- Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA
| | - Shining Xu
- Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA
| | - Nikhil Pokharel
- Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA
| | - Luke J Mawst
- Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA
| | - Michael S Arnold
- Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA
| | - Jason K Kawasaki
- Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA.
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9
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Ru F, Xia J, Li X, Liu P, Qiao P, Li Y, Cao J, Tian L, Zhang W, Meng XM. Epitaxial growth of structure-tunable ZnO/ZnS core/shell nanowire arrays using HfO 2 as the buffer layer. NANOSCALE 2022; 14:7579-7588. [PMID: 35506868 DOI: 10.1039/d2nr01560a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Synthesis of high-quality ZnO/ZnS heterostructures with tunable phase and controlled structures is in high demand due to their adjustable band gap and efficient electron-hole pair separation. In this report, for the first time, remote heteroepitaxy of single-crystalline ZnO/ZnS core/shell nanowire arrays has been realized using amorphous HfO2 as the buffer layer. Zinc blende or wurtzite ZnS epilayer can be efficiently fabricated under the same thermal deposition condition by adjusting the buffer layer thickness, even among the same batch of products, respectively. Structural characterization reveals "(01-10)ZnOwz//(2-20)ZnSZB, [0001]ZnOWZ//[001]ZnSZB" and "(01-10)ZnOWZ//(01-10)ZnSWZ, [0002]ZnOWZ//[0002]ZnSWZ" epitaxial relationships between the core and the shell, respectively. The cathodoluminescence measurement demonstrates that the tuning of the optical properties can be accomplished by preparing a heterostructure with HfO2, in which a strong green emission increases at the expense of the quenching of UV emission. In addition, the core/shell heterostructure based Schottky diode exhibits an asymmetrical rectifying behavior and an outstanding photo-electronic switching-effect. We believe that the aforementioned results could provide fundamental insights for epitaxial growth of structure-tunable ZnO/ZnS heterostructures on the nanoscale. Furthermore, this promising route buffered by the high-k material can broaden the options for fabricating heterojunctions and promote their application in photoelectric nanodevices.
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Affiliation(s)
- Fan Ru
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
- Centre of Material Science and Optoelectronic Engineering, University of Chinese Academy of Science, Beijing, 10049, P. R. China
| | - Jing Xia
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
- Centre of Material Science and Optoelectronic Engineering, University of Chinese Academy of Science, Beijing, 10049, P. R. China
| | - Xuanze Li
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
- Centre of Material Science and Optoelectronic Engineering, University of Chinese Academy of Science, Beijing, 10049, P. R. China
| | - Pei Liu
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
- Centre of Material Science and Optoelectronic Engineering, University of Chinese Academy of Science, Beijing, 10049, P. R. China
| | - Peiyu Qiao
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
- Centre of Material Science and Optoelectronic Engineering, University of Chinese Academy of Science, Beijing, 10049, P. R. China
| | - Yuye Li
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
- Centre of Material Science and Optoelectronic Engineering, University of Chinese Academy of Science, Beijing, 10049, P. R. China
| | - Jianyu Cao
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
- Centre of Material Science and Optoelectronic Engineering, University of Chinese Academy of Science, Beijing, 10049, P. R. China
| | - Lifeng Tian
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
- Centre of Material Science and Optoelectronic Engineering, University of Chinese Academy of Science, Beijing, 10049, P. R. China
| | - Wenjun Zhang
- Center of Super-Diamond and Advanced Films (COSADF) and Department of Materials Science and Engineering, City University of Hong Kong SAR, P.R.China
| | - Xiang-Min Meng
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
- Centre of Material Science and Optoelectronic Engineering, University of Chinese Academy of Science, Beijing, 10049, P. R. China
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10
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Badokas K, Kadys A, Augulis D, Mickevičius J, Ignatjev I, Skapas M, Šebeka B, Juška G, Malinauskas T. MOVPE Growth of GaN via Graphene Layers on GaN/Sapphire Templates. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:785. [PMID: 35269273 PMCID: PMC8912371 DOI: 10.3390/nano12050785] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/02/2022] [Revised: 02/21/2022] [Accepted: 02/22/2022] [Indexed: 02/04/2023]
Abstract
The remote epitaxy of GaN epilayers on GaN/sapphire templates was studied by using different graphene interlayer types. Monolayer, bilayer, double-stack of monolayer, and triple-stack of monolayer graphenes were transferred onto GaN/sapphire templates using a wet transfer technique. The quality of the graphene interlayers was examined by Raman spectroscopy. The impact of the interlayer type on GaN nucleation was analyzed by scanning electron microscopy. The graphene interface and structural quality of GaN epilayers were studied by transmission electron microscopy and X-ray diffraction, respectively. The influence of the graphene interlayer type is discussed in terms of the differences between remote epitaxy and van der Waals epitaxy. The successful exfoliation of GaN membrane is demonstrated.
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Affiliation(s)
- Kazimieras Badokas
- Institute of Photonics and Nanotechnology, Vilnius University, LT-10257 Vilnius, Lithuania; (A.K.); (D.A.); (G.J.); (T.M.)
| | - Arūnas Kadys
- Institute of Photonics and Nanotechnology, Vilnius University, LT-10257 Vilnius, Lithuania; (A.K.); (D.A.); (G.J.); (T.M.)
| | - Dominykas Augulis
- Institute of Photonics and Nanotechnology, Vilnius University, LT-10257 Vilnius, Lithuania; (A.K.); (D.A.); (G.J.); (T.M.)
| | - Jūras Mickevičius
- Institute of Photonics and Nanotechnology, Vilnius University, LT-10257 Vilnius, Lithuania; (A.K.); (D.A.); (G.J.); (T.M.)
| | - Ilja Ignatjev
- Center for Physical Sciences and Technology, LT-10257 Vilnius, Lithuania; (I.I.); (M.S.); (B.Š.)
| | - Martynas Skapas
- Center for Physical Sciences and Technology, LT-10257 Vilnius, Lithuania; (I.I.); (M.S.); (B.Š.)
| | - Benjaminas Šebeka
- Center for Physical Sciences and Technology, LT-10257 Vilnius, Lithuania; (I.I.); (M.S.); (B.Š.)
| | - Giedrius Juška
- Institute of Photonics and Nanotechnology, Vilnius University, LT-10257 Vilnius, Lithuania; (A.K.); (D.A.); (G.J.); (T.M.)
| | - Tadas Malinauskas
- Institute of Photonics and Nanotechnology, Vilnius University, LT-10257 Vilnius, Lithuania; (A.K.); (D.A.); (G.J.); (T.M.)
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11
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Ma H, Xiao X, Wang Y, Sun Y, Wang B, Gao X, Wang E, Jiang K, Liu K, Zhang X. Wafer-scale freestanding vanadium dioxide film. SCIENCE ADVANCES 2021; 7:eabk3438. [PMID: 34878834 PMCID: PMC8654297 DOI: 10.1126/sciadv.abk3438] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/14/2023]
Abstract
Vanadium dioxide (VO2), with well-known metal-to-insulator phase transition, has been used to realize intriguing smart functions in photodetectors, modulators, and actuators. Wafer-scale freestanding VO2 (f-VO2) films are desirable for integrating VO2 with other materials into multifunctional devices. Unfortunately, their preparation has yet to be achieved because the wafer-scale etching needs ultralong time and damages amphoteric VO2 whether in acid or alkaline etchants. Here, we achieved wafer-scale f-VO2 films by a nano-pinhole permeation-etching strategy in 6 min, far less than that by side etching (thousands of minutes). The f-VO2 films retain their pristine metal-to-insulator transition and intrinsic mechanical properties and can be conformably transferred to arbitrary substrates. Integration of f-VO2 films into diverse large-scale smart devices, including terahertz modulators, camouflageable photoactuators, and temperature-indicating strips, shows advantages in low insertion loss, fast response, and low triggering power. These f-VO2 films find more intriguing applications by heterogeneous integration with other functional materials.
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Affiliation(s)
- He Ma
- Institute of Information Photonics Technology, Faculty of Science, Beijing University of Technology, Beijing 100124, P. R. China
| | - Xiao Xiao
- Institute of Information Photonics Technology, Faculty of Science, Beijing University of Technology, Beijing 100124, P. R. China
| | - Yu Wang
- Institute of Information Photonics Technology, Faculty of Science, Beijing University of Technology, Beijing 100124, P. R. China
| | - Yufei Sun
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
| | - Bolun Wang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
| | - Xinyu Gao
- State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua-Foxconn Nanotechnology Research Center, Department of Physics, Collaborative Innovation Center of Quantum Matter, Tsinghua University, Beijing 100084, P. R. China
| | - Enze Wang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
| | - Kaili Jiang
- State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua-Foxconn Nanotechnology Research Center, Department of Physics, Collaborative Innovation Center of Quantum Matter, Tsinghua University, Beijing 100084, P. R. China
| | - Kai Liu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
- Corresponding author. (K.L.); (X.Z.)
| | - Xinping Zhang
- Institute of Information Photonics Technology, Faculty of Science, Beijing University of Technology, Beijing 100124, P. R. China
- Corresponding author. (K.L.); (X.Z.)
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12
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Choi J, Jin DK, Jeong J, Kang BK, Yang WS, Ali A, Yoo J, Kim MJ, Yi GC, Hong YJ. Facet-selective morphology-controlled remote epitaxy of ZnO microcrystals via wet chemical synthesis. Sci Rep 2021; 11:22697. [PMID: 34811457 PMCID: PMC8608950 DOI: 10.1038/s41598-021-02222-1] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/13/2021] [Accepted: 11/11/2021] [Indexed: 11/09/2022] Open
Abstract
We report on morphology-controlled remote epitaxy via hydrothermal growth of ZnO micro- and nanostructure crystals on graphene-coated GaN substrate. The morphology control is achieved to grow diverse morphologies of ZnO from nanowire to microdisk by changing additives of wet chemical solution at a fixed nutrient concentration. Although the growth of ZnO is carried out on poly-domain graphene-coated GaN substrate, the direction of hexagonal sidewall facet of ZnO is homogeneous over the whole ZnO-grown area on graphene/GaN because of strong remote epitaxial relation between ZnO and GaN across graphene. Atomic-resolution transmission electron microscopy corroborates the remote epitaxial relation. The non-covalent interface is applied to mechanically lift off the overlayer of ZnO crystals via a thermal release tape. The mechanism of facet-selective morphology control of ZnO is discussed in terms of electrostatic interaction between nutrient solution and facet surface passivated with functional groups derived from the chemical additives.
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Affiliation(s)
- Joonghoon Choi
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, 05006, Republic of Korea
- GRI-TPC International Research Center, Sejong University, Seoul, 05006, Republic of Korea
| | - Dae Kwon Jin
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, 05006, Republic of Korea
- GRI-TPC International Research Center, Sejong University, Seoul, 05006, Republic of Korea
| | - Junseok Jeong
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, 05006, Republic of Korea
- GRI-TPC International Research Center, Sejong University, Seoul, 05006, Republic of Korea
| | - Bong Kyun Kang
- Nano Materials Research Center, Korea Electronics Technology Institute (KETI), Seongnam, Gyeonggi-do, 13509, Republic of Korea
- Department of Electronic Materials and Devices Engineering, Department of Display Materials Engineering, Soonchunhyang University, Asan, Chungnam, 31538, Republic of Korea
| | - Woo Seok Yang
- Nano Materials Research Center, Korea Electronics Technology Institute (KETI), Seongnam, Gyeonggi-do, 13509, Republic of Korea
| | - Asad Ali
- Department of Physics and Astronomy, Institute of Applied Physics, Seoul National University, Seoul, 151-747, Republic of Korea
| | - Jinkyoung Yoo
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Moon J Kim
- Department of Materials Science & Engineering, The University of Texas at Dallas, Richardson, TX, 75080, USA
| | - Gyu-Chul Yi
- Department of Physics and Astronomy, Institute of Applied Physics, Seoul National University, Seoul, 151-747, Republic of Korea
| | - Young Joon Hong
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, 05006, Republic of Korea.
- GRI-TPC International Research Center, Sejong University, Seoul, 05006, Republic of Korea.
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13
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Heterogeneous integration of single-crystalline rutile nanomembranes with steep phase transition on silicon substrates. Nat Commun 2021; 12:5019. [PMID: 34408136 PMCID: PMC8373986 DOI: 10.1038/s41467-021-24740-2] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/24/2020] [Accepted: 06/29/2021] [Indexed: 11/28/2022] Open
Abstract
Unrestricted integration of single-crystal oxide films on arbitrary substrates has been of great interest to exploit emerging phenomena from transition metal oxides for practical applications. Here, we demonstrate the release and transfer of a freestanding single-crystalline rutile oxide nanomembranes to serve as an epitaxial template for heterogeneous integration of correlated oxides on dissimilar substrates. By selective oxidation and dissolution of sacrificial VO2 buffer layers from TiO2/VO2/TiO2 by H2O2, millimeter-size TiO2 single-crystalline layers are integrated on silicon without any deterioration. After subsequent VO2 epitaxial growth on the transferred TiO2 nanomembranes, we create artificial single-crystalline oxide/Si heterostructures with excellent sharpness of metal-insulator transition (\documentclass[12pt]{minimal}
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\begin{document}$$\triangle \rho /\rho$$\end{document}△ρ/ρ > 103) even in ultrathin (<10 nm) VO2 films that are not achievable via direct growth on Si. This discovery offers a synthetic strategy to release the new single-crystalline oxide nanomembranes and an integration scheme to exploit emergent functionality from epitaxial oxide heterostructures in mature silicon devices. Unrestricted integration of single-crystal oxide films on Si substrates allows for exploitation of emerging functionality of new materials in mature silicon devices. Here the authors integrate epitaxial oxide films with sharp metal-insulator transition on Si substrates by epitaxial lift-off of a freestanding nanomembrane.
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14
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Kim H, Lu K, Liu Y, Kum HS, Kim KS, Qiao K, Bae SH, Lee S, Ji YJ, Kim KH, Paik H, Xie S, Shin H, Choi C, Lee JH, Dong C, Robinson JA, Lee JH, Ahn JH, Yeom GY, Schlom DG, Kim J. Impact of 2D-3D Heterointerface on Remote Epitaxial Interaction through Graphene. ACS NANO 2021; 15:10587-10596. [PMID: 34081854 DOI: 10.1021/acsnano.1c03296] [Citation(s) in RCA: 25] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Remote epitaxy has drawn attention as it offers epitaxy of functional materials that can be released from the substrates with atomic precision, thus enabling production and heterointegration of flexible, transferrable, and stackable freestanding single-crystalline membranes. In addition, the remote interaction of atoms and adatoms through two-dimensional (2D) materials in remote epitaxy allows investigation and utilization of electrical/chemical/physical coupling of bulk (3D) materials via 2D materials (3D-2D-3D coupling). Here, we unveil the respective roles and impacts of the substrate material, graphene, substrate-graphene interface, and epitaxial material for electrostatic coupling of these materials, which governs cohesive ordering and can lead to single-crystal epitaxy in the overlying film. We show that simply coating a graphene layer on wafers does not guarantee successful implementation of remote epitaxy, since atomically precise control of the graphene-coated interface is required, and provides key considerations for maximizing the remote electrostatic interaction between the substrate and adatoms. This was enabled by exploring various material systems and processing conditions, and we demonstrate that the rules of remote epitaxy vary significantly depending on the ionicity of material systems as well as the graphene-substrate interface and the epitaxy environment. The general rule of thumb discovered here enables expanding 3D material libraries that can be stacked in freestanding form.
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Affiliation(s)
- Hyunseok Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Kuangye Lu
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Yunpeng Liu
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Hyun S Kum
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Ki Seok Kim
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Kuan Qiao
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Sang-Hoon Bae
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Sangho Lee
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - You Jin Ji
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Ki Hyun Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Hanjong Paik
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14850, United States
| | - Saien Xie
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14850, United States
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14850, United States
| | - Heechang Shin
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Chanyeol Choi
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - June Hyuk Lee
- Neutron Science Division, Korea Atomic Energy Research Institute, Daejeon 34057, Republic of Korea
| | - Chengye Dong
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- 2D Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Joshua A Robinson
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- 2D Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Jae-Hyun Lee
- Department of Energy Systems Research and Department of Materials Science and Engineering, Ajou University, Suwon 16499, Republic of Korea
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Geun Young Yeom
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Darrell G Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14850, United States
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14850, United States
- Leibniz-Institut für Kristallzüchtung, Berlin 12489, Germany
| | - Jeehwan Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
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