Uniaxial Strain-Controlled Ground States in Manganite Films

Room-temperature stabilizing strongly competing ferrielectric and antiferroelectric phases in PbZrO3 by strain-mediated phase separation

PbZrO3 has been broadly considered as a prototypical antiferroelectric material for high-power energy storage. A recent theoretical study suggests that the ground state of PbZrO3 is threefold-modulated ferrielectric, which challenges the generally accepted antiferroelectric configuration. However, such a novel ferrielectric phase was predicted only to be accessible at low temperatures. Here, we successfully achieve the room-temperature construction of the strongly competing ferrielectric and antiferroelectric state by strain-mediated phase separation in PbZrO3/SrTiO3 thin film. We demonstrate that the phase separation occurs spontaneously in quasi-periodic stripe-like patterns under a compressive misfit strain and can be tailored by varying the film thickness. The ferrielectric phase strikingly exhibitsa threefold modulation period with a nearly up-up-down configuration, which could be stabilized and manipulated by the formation and evolution of interfacial defects under applied strain. The present results construct a fertile ground for further exploring the physical properties and applications based on the novel ferrielectric phase.

Strain-induced charge ordering above room temperature in rare-earth manganites

Most known mixed manganites containing rare-earth elements demonstrate a pronounced charge ordering (CO) state below room temperature. The behavior of the magnetic susceptibility and electronic magnetic resonance of polycrystalline Pr1-xSrxMnO3/YSZ (x = 0.2 and x = 0.4) films without a pronounced texture indicates the formation of the CO phase in the samples at temperatures close to and above room temperature. Moreover, this phase manifests itself with a typical sign of martensitic transformation. The same phenomenon has been traced for textured polycrystalline La0.7Sr0.3MnO3/YSZ films. Electron microscope data indicate the presence of internal strain within the films, which is probably responsible for the formation of the CO phase. It is assumed that the reasons for the appearance of such strain include the crystallite size and the boundary between them. The results obtained provide the basis for the development of new research and technological tasks for the generation of the high-temperature CO state in various polycrystalline rare-earth manganites, since this state contributes to the manifestation of interesting magnetocaloric, magnetoelectric and multiferroic properties. In addition, recent data has opened up new opportunities for studying the strain-induced phenomena in such materials.

Tailoring of magnetism & electron transport of manganate thin films by controlling the Mn-O-Mn bond angles via strain engineering

Strain engineering beyond substrate limitation of colossal magnetoresistant thin (La0.6Pr0.4)0.7Ca0.3MnO3 (LPCMO) films on LaAlO3-buffered SrTiO3 (LAO/STO) substrates has been demonstrated using metalorganic aerosol deposition technique. By growing partially relaxed 7-27 nm thick heteroepitaxial LAO buffer layers on STO a perfect lattice matching to the LPCMO has been achieved. As a result, strain-free heteroepitaxial 10-20 nm thick LPCMO/LAO/STO films with bulk-like ferromagnetic metallic ground state were obtained. Without buffer the coherently strained thin LPCMO/STO and LPCMO/LAO films were insulating and weakly magnetic. The reason for the optimized magnetotransport in strain-free LPCMO films was found to be a large octahedral Mn-O-Mn bond angle φOOR ~ 166-168° as compared to the significantly smaller one of φOOR ~ 152-156° determined for the tensile (LPCMO/STO) and compressively (LPCMO/LAO) strained films.

Uniaxial Strain and Hydrostatic Pressure Engineering of the Hidden Magnetism in La1-xCaxMnO3 (0 ≤ x ≤ 1/2) Thin Films

Here, using various substrates, we demonstrate that the in-plane uniaxial strain engineering can enhance the Jahn-Teller distortions and promote selective orbital occupancy to induce an emergent antiferromagnetic insulating (AFI) phase at x = 1/3 of La_1-xCa_xMnO₃. Such an AFI phase depends not only on the magnitude of epitaxial strain but also on the symmetry of the substrates. Using the large uniaxial strain imparted by DyScO₃(001) substrate, the AFI ground state is achieved in a wide range of doping levels (0 ≤ x ≤ 1/2), leaving an extended AFI phase diagram. Moreover, it is found that hydrostatic pressure can tune the AFI phase back to a hidden ferromagnetic metallic phase, accompanied by the formation of accommodation strain. The coaction of the accommodation strain, uniaxial strain, and hydrostatic pressure produces complex phase competition and evolution, and the result may shed light on phase space control of other functional perovskites with the competing magnetic interactions.

Strain-Induced Domain Structure and Its Impact on Magnetic and Transport Properties of Gd0.6Ca0.4MnO3 Thin Films

The evolution of lattice strain on crystallographic domain structures and magnetic properties of epitaxial low-bandwidth manganite Gd_0.6Ca_0.4MnO₃ (GCMO) films have been studied with films on different substrates: SrTiO₃, (LaAlO₃)_0.3(Sr₂AlTaO₆)_0.7, SrLaAlO₃, and MgO. The X-ray diffraction data reveals that all of the films, except the films on MgO, are epitaxial and have an orthorhombic structure. Cross-sectional transmission electron microscopy (TEM) shows lattice mismatch-dependent microstructural defects. Large-enough tensile strain can increase oxygen vacancies concentration near the interface and can induce vacancies in the substrate. In addition, a second phase was observed in the films with tensile strain. However, compressive strain causes dislocations in the interface and a mosaic domain structure. On the other hand, the magnetic properties of the films, including saturation magnetization, coercive field, and transport property depend systematically on the substrate-induced strain. Based on these results, the choice of appropriate substrate is an important key to obtaining high-quality GCMO film, which can affect the functionality of potential device applications.

Soliton-Mediated Magnetic Reversal in an All-Oxide-Based Synthetic Antiferromagnetic Superlattice

All-oxide-based synthetic antiferromagnets (SAFs) are attracting intense research interest due to their superior tunability and great potentials for antiferromagnetic spintronic devices. In this work, using the La_2/3Ca_1/3MnO₃/CaRu_1/2Ti_1/2O₃ (LCMO/CRTO) superlattice as a model SAF, we investigated the layer-resolved magnetic reversal mechanism by polarized neutron reflectivity. We found that the reversal of LCMO layer moments is mediated by nucleation, expansion, and shrinkage of a magnetic soliton. This unique magnetic reversal process creates a reversed magnetic configuration of the SAF after a simple field cycling. Therefore, it can enable vertical data transfer from the bottom to the top of the superlattice. The physical origin of this intriguing magnetic reversal process could be attributed to the cooperation of the surface spin-flop effect and enhanced uniaxial magnetic anisotropy of the bottom LCMO layer. This work may pave a way to utilize all-oxide-based SAFs for three-dimensional spintronic devices with vertical data transfer and high-density data storage.

Large Tuning of Electroresistance in an Electromagnetic Device Structure Based on the Ferromagnetic-Piezoelectric Interface

The electrical control of the conducting state through phase transition and/or resistivity switching in heterostructures of strongly correlated oxides is at the core of the large on-going research activity of fundamental and applied interest. In an electromechanical device made of a ferromagnetic-piezoelectric heterostructure, we observe an anomalous negative electroresistance of ∼-282% and a significant tuning of the metal-to-insulator transition temperature when an electric field is applied across the piezoelectric. Supported by finite-element simulations, we identify the electric field applied along the conducting bridge of the device as the plausible origin: stretching the underlying piezoelectric substrate gives rise to a lattice distortion of the ferromagnetic manganite overlayer through epitaxial strain. Large modulations of the resistance are also observed by applying static dc voltages across the thickness of the piezoelectric substrate. These results indicate that the emergent electronic phase separation in the manganites can be selectively manipulated when interfacing with a piezoelectric material, which offers great opportunities in designing oxide-based electromechanical devices.

Misfit Relaxation Mechanisms and Domain Ordering in Anisotropically Strained Manganite Thin Films

The evolution of anisotropic strain in epitaxial Pr_0.5Sr_0.5MnO₃ films grown on (LaAlO₃)_0.3(SrAl_0.5Ta_0.5O₃)_0.7(110) substrates has been characterized by off-specular X-ray reciprocal space mappings on the (130), (310), (222), and (222̅) reflections in the scattering zone containing the [110] axis. We demonstrate that a multistage hierarchical structural evolution (single-domain-like structure, domain ordering, twin domains, and/or periodic structural modulations) occurs as the film thickness increases, and the structural modulation between the two transverse in-plane [11̅0] and [001] directions is quite different due to the monoclinic distortion of the film. We then show the relationship between the distribution of diffraction spots in reciprocal space and their corresponding domain configurations in real space under various thicknesses, which is closely correlated with thickness-dependent magnetic and magnetotransport properties. More importantly, the distribution and annihilation dynamics of the domain ordering are imaged utilizing home-built magnetic force microscope, revealing that the structural domains tilted toward either the [001] or [001̅] direction are arranged along the [11̅1] and [1̅11] crystal orientations. The direct visualization and dynamics of anisotropic-strain-related domain ordering will open a new path toward the control and manipulation of domain engineering in strongly correlated perovskite oxide films.

Magnetoimpedance spectroscopy of phase-separated La0.5Ca0.5MnO3 polycrystalline manganites

Magnetoimpedance spectroscopy was carried out on phase-separated La_0.5Ca_0.5MnO₃ polycrystalline manganites. The La_0.5Ca_0.5MnO₃ powder was synthesized following an adapted sol-gel route. Structural and magnetic data showed the signs of phase coexistence of ferromagnetic (FM) Pnma and charge-ordered antiferromagnetic (CO-AFM) P2₁/m phases. Magnetization vs. temperature (M vs. T) measurements revealed several magnetic transitions from the high temperature paramagnetic (PM) to an FM phase upon cooling (PM-FM) at ≈240 K, FM-AFM (≈170 K) and AFM-FM (≈100 K). Magnetic field (H)-dependent impedance spectroscopy data were collected from sintered pellets and fitted with an equivalent circuit model to separately analyze the different dielectric contributions from the grain boundary (GB) and the grain interior bulk areas. This allowed separating the GB and bulk magnetoresistance (MR), which was shown to amount to a maximum of ≈80% for both GB and bulk at H = 10 T near the metal-insulator transition (MIT) at ≈100 K. The GB resistance was found to be larger than the bulk resistance by a factor of ≈3, which implies that the direct current (DC) resistance and DC MR are dominated by contributions from the GBs. The magnetocapacitance (MC) effects detected were all found to be small below ≈3%, including in the presence of a CO phase.