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Qin F, Lu M, Lu P, Sun S, Bai X, Zhang Y. Luminescence and Degeneration Mechanism of Perovskite Light-Emitting Diodes and Strategies for Improving Device Performance. SMALL METHODS 2023; 7:e2300434. [PMID: 37434048 DOI: 10.1002/smtd.202300434] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/02/2023] [Revised: 06/17/2023] [Indexed: 07/13/2023]
Abstract
Perovskite light-emitting diodes (PeLEDs) can be a promising technology for next-generation display and lighting applications due to their excellent optoelectronic properties. However, a systematical overview of luminescence and degradation mechanism of perovskite materials and PeLEDs is lacking. Therefore, it is crucial to fully understand these mechanisms and further improve device performances. In this work, the fundamental photophysical processes of perovskite materials, electroluminescence mechanism of PeLEDs including carrier kinetics and efficiency roll-off as well as device degradation mechanism are discussed in detail. In addition, the strategies to improve device performances are summarized, including optimization of photoluminescence quantum yield, charge injection and recombination, and light outcoupling efficiency. It is hoped that this work can provide guidance for future development of PeLEDs and ultimately realize industrial applications.
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Affiliation(s)
- Feisong Qin
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Min Lu
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Po Lu
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Siqi Sun
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Xue Bai
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Yu Zhang
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
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2
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Zhao Y, Feng W, Li M, Lu J, Qin X, Lin K, Luo J, Zhang WH, Lim EL, Wei Z. Efficient Perovskite Light-Emitting Diodes with Chemically Bonded Contact and Regulated Charge Behavior. NANO LETTERS 2023; 23:8560-8567. [PMID: 37676859 DOI: 10.1021/acs.nanolett.3c02335] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/09/2023]
Abstract
Efficient charge injection and radiative recombination are essential to achieving high-performance perovskite light-emitting diodes (Pero-LEDs). However, the perovskite emission layer (EML) and the electron transport layer (ETL) form a poor physically interfacial contact and non-negligible charge injection barrier, limiting the device performance. Herein, we utilize a phosphine oxide, 2,4,6-tris[3-(diphenylphosphinyl)phenyl]-1,3,5-triazine (PO-T2T), to treat the perovskite/ETL interface and form a chemically bonded contact. Specifically, PO-T2T firmly bonds on the perovskite's surface and grain boundaries through a dative bond, effectively passivating the uncoordinated lead defects. Additionally, PO-T2T has high electron mobility and establishes an electron transport highway to bridge the ETL and EML. As a result, a maximum external quantum efficiency (EQEmax) of 22.06% (average EQEmax of 20.02 ± 1.00%) and maximum luminance (Lmax) of 103286 cd m-2 have been achieved for the champion device. Our results indicate that EML/ETL interface modifications are crucial for the fabrication of highly efficient Pero-LEDs.
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Affiliation(s)
- Yaping Zhao
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, People's Republic of China
| | - Wenjing Feng
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, People's Republic of China
| | - Mingliang Li
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, People's Republic of China
- Sichuan Research Center of New Materials, Institute of Chemical Materials, China Academy of Engineering Physics, Chengdu 610200, People's Republic of China
| | - Jianxun Lu
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, People's Republic of China
| | - Xiangqian Qin
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, People's Republic of China
| | - Kebin Lin
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, People's Republic of China
| | - Jiefeng Luo
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, People's Republic of China
| | - Wen-Hua Zhang
- Sichuan Research Center of New Materials, Institute of Chemical Materials, China Academy of Engineering Physics, Chengdu 610200, People's Republic of China
| | - Eng Liang Lim
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, People's Republic of China
| | - Zhanhua Wei
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, People's Republic of China
- Innovation Laboratory for Sciences and Technologies of Energy Materials of Fujian Province (IKKEM), Xiamen 361005, People's Republic of China
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3
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Lin Y, Chen C, Wang Y, Yu M, Yang J, Ni I, Lin B, Zhidkov IS, Kurmaev EZ, Lu Y, Chueh C. Realizing High Brightness Quasi-2D Perovskite Light-Emitting Diodes with Reduced Efficiency Roll-Off via Multifunctional Interface Engineering. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2302232. [PMID: 37400366 PMCID: PMC10502845 DOI: 10.1002/advs.202302232] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/07/2023] [Revised: 06/21/2023] [Indexed: 07/05/2023]
Abstract
Quasi-2D perovskites have recently flourished in the field of luminescence due to the quantum-confinement effect and the efficient energy transfer between different n phases resulting in exceptional optical properties. However, owing to the lower conductivity and poor charge injection, quasi-2D perovskite light-emitting diodes (PeLEDs) typically suffer from low brightness and high-efficiency roll-off at high current densities compared to 3D perovskite-based PeLEDs, which is undoubtedly one of the most critical issues in this field. In this work, quasi-2D PeLEDs with high brightness, reduced trap density, and low-efficiency roll-off are successfully demonstrated by introducing a thin layer of conductive phosphine oxide at the perovskite/electron transport layer interface. The results surprisingly show that this additional layer does not improve the energy transfer between multiple quasi-2D phases in the perovskite film, but purely improves the electronic properties of the perovskite interface. On the one hand, it passivates the surface defects of the perovskite film; on the other hand, it promotes electron injection and prevents hole leakage across this interface. As a result, the modified quasi-2D pure Cs-based device shows a maximum brightness of > 70,000 cd m-2 (twice that of the control device), a maximum external quantum efficiency (EQE) of > 10% and a much lower efficiency roll-off at high bias voltages.
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Affiliation(s)
- Yu‐Kuan Lin
- Department of Chemical EngineeringNational Taiwan UniversityTaipei10617Taiwan
| | - Chiung‐Han Chen
- Department of Chemical EngineeringNational Taiwan UniversityTaipei10617Taiwan
| | - Yen‐Yu Wang
- Research Center for Applied SciencesAcademia SinicaTaipei11529Taiwan
| | - Ming‐Hsuan Yu
- Department of Chemical EngineeringNational Taiwan UniversityTaipei10617Taiwan
| | - Jing‐Wei Yang
- Research Center for Applied SciencesAcademia SinicaTaipei11529Taiwan
| | - I‐Chih Ni
- Graduate Institute of Photonics and OptoelectronicsNational Taiwan UniversityTaipei10617Taiwan
| | - Bi‐Hsuan Lin
- National Synchrotron Radiation Research CenterHsinchu30076Taiwan
| | - Ivan S. Zhidkov
- Institute of Physics and TechnologyUral Federal UniversityYekaterinburg620002Russia
- M. N. Mikheev Institute of Metal Physics of Ural Branch of Russian Academy of SciencesYekaterinburg620108Russia
| | - Ernst Z. Kurmaev
- Institute of Physics and TechnologyUral Federal UniversityYekaterinburg620002Russia
- M. N. Mikheev Institute of Metal Physics of Ural Branch of Russian Academy of SciencesYekaterinburg620108Russia
| | - Yu‐Jung Lu
- Research Center for Applied SciencesAcademia SinicaTaipei11529Taiwan
- Department of PhysicsNational Taiwan UniversityTaipei10617Taiwan
| | - Chu‐Chen Chueh
- Department of Chemical EngineeringNational Taiwan UniversityTaipei10617Taiwan
- Advanced Research Center for Green Materials Science and TechnologyNational Taiwan UniversityTaipei10617Taiwan
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4
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Cai W, Ali MU, Liu P, He M, Zhao C, Chen Z, Zang Y, Tang M, Meng H, Fu H, Wei G, Yip H. Unravelling Alkali-Metal-Assisted Domain Distribution of Quasi-2D Perovskites for Cascade Energy Transfer toward Efficient Blue Light-Emitting Diodes. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2200393. [PMID: 35561063 PMCID: PMC9284168 DOI: 10.1002/advs.202200393] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/20/2022] [Revised: 04/07/2022] [Indexed: 06/15/2023]
Abstract
Solution processable quasi-2D (Q-2D) perovskite materials are emerging as a promising candidate for blue light source in full-color display applications due to their good color saturation property, high brightness, and spectral tunability. Herein, an efficient energy cascade channel is developed by introducing sodium bromide (NaBr) in phenyl-butylammonium (PBA)-containing mixed-halide Q-2D perovskites for a blue perovskite light-emitting diode (PeLED). The incorporation of alkali metal contributes to the nucleation and growth of Q-2D perovskites into graded distribution of domains with different layer number <n>. The study of excitation dynamics by transient absorption (TA) spectroscopy confirms that NaBr induces more Q-2D perovskite phases with small n number, providing a graded energy cascade pathway to facilitate more efficient energy transfer processes. In addition, the nonradiative recombination within the Q-2D perovskites is significantly suppressed upon Na+ incorporation, as validated by the trap density estimation. Consequently, the optimized blue PeLEDs manifest a peak external quantum efficiency (EQE) of 7.0% emitting at 486 nm with a maximum luminance of 1699 cd m-2 . It is anticipated that these findings will improve the understanding of alkali-metal-assisted optimization of Q-2D perovskites and pave the way toward high-performance blue PeLEDs.
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Affiliation(s)
- Wanqing Cai
- Tsinghua‐Berkeley Shenzhen Institute (TBSI)Tsinghua UniversityShenzhen518055China
- Tsinghua Shenzhen International Graduate SchoolTsinghua UniversityShenzhen City518055China
| | - Muhammad Umair Ali
- Tsinghua‐Berkeley Shenzhen Institute (TBSI)Tsinghua UniversityShenzhen518055China
- Tsinghua Shenzhen International Graduate SchoolTsinghua UniversityShenzhen City518055China
| | - Ping Liu
- Tsinghua‐Berkeley Shenzhen Institute (TBSI)Tsinghua UniversityShenzhen518055China
- Tsinghua Shenzhen International Graduate SchoolTsinghua UniversityShenzhen City518055China
| | - Miao He
- Tsinghua‐Berkeley Shenzhen Institute (TBSI)Tsinghua UniversityShenzhen518055China
- Tsinghua Shenzhen International Graduate SchoolTsinghua UniversityShenzhen City518055China
| | - Cong Zhao
- Tsinghua‐Berkeley Shenzhen Institute (TBSI)Tsinghua UniversityShenzhen518055China
- Tsinghua Shenzhen International Graduate SchoolTsinghua UniversityShenzhen City518055China
| | - Ziming Chen
- State Key Laboratory of Luminescent Materials and DevicesInstitute of Polymer Optoelectronic Materials and DevicesSchool of Materials Science and EngineeringSouth China University of Technology381 Wushan RoadGuangzhou510640P. R. China
| | - Yue Zang
- State Key Laboratory of Luminescent Materials and DevicesInstitute of Polymer Optoelectronic Materials and DevicesSchool of Materials Science and EngineeringSouth China University of Technology381 Wushan RoadGuangzhou510640P. R. China
| | - Man‐Chung Tang
- Tsinghua‐Berkeley Shenzhen Institute (TBSI)Tsinghua UniversityShenzhen518055China
- Tsinghua Shenzhen International Graduate SchoolTsinghua UniversityShenzhen City518055China
| | - Hong Meng
- School of Advanced MaterialsPeking University Shenzhen Graduate SchoolShenzhen City518055P. R. China
| | - Hongyan Fu
- Tsinghua‐Berkeley Shenzhen Institute (TBSI)Tsinghua UniversityShenzhen518055China
- Tsinghua Shenzhen International Graduate SchoolTsinghua UniversityShenzhen City518055China
| | - Guodan Wei
- Tsinghua‐Berkeley Shenzhen Institute (TBSI)Tsinghua UniversityShenzhen518055China
- Tsinghua Shenzhen International Graduate SchoolTsinghua UniversityShenzhen City518055China
| | - Hin‐Lap Yip
- State Key Laboratory of Luminescent Materials and DevicesInstitute of Polymer Optoelectronic Materials and DevicesSchool of Materials Science and EngineeringSouth China University of Technology381 Wushan RoadGuangzhou510640P. R. China
- Department of Materials Science and EngineeringCity University of Hong KongKowloon999077Hong Kong
- School of Energy and EnvironmentCity University of Hong KongKowloon999077Hong Kong
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5
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Li B, Tian F, Cui X, Xiang B, Zhao H, Zhang H, Wang D, Li J, Wang X, Fang X, Qiu M, Wang D. Review for Rare-Earth-Modified Perovskite Materials and Optoelectronic Applications. NANOMATERIALS 2022; 12:nano12101773. [PMID: 35630995 PMCID: PMC9145635 DOI: 10.3390/nano12101773] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/18/2022] [Revised: 05/13/2022] [Accepted: 05/16/2022] [Indexed: 12/28/2022]
Abstract
In recent years, rare-earth metals with triply oxidized state, lanthanide ions (Ln3+), have been demonstrated as dopants, which can efficiently improve the optical and electronic properties of metal halide perovskite materials. On the one hand, doping Ln3+ ions can convert near-infrared/ultraviolet light into visible light through the process of up-/down-conversion and then the absorption efficiency of solar spectrum by perovskite solar cells can be significantly increased, leading to high device power conversion efficiency. On the other hand, multi-color light emissions and white light emissions originated from perovskite nanocrystals can be realized via inserting Ln3+ ions into the perovskite crystal lattice, which functioned as quantum cutting. In addition, doping or co-doping Ln3+ ions in perovskite films or devices can effectively facilitate perovskite film growth, tailor the energy band alignment and passivate the defect states, resulting in improved charge carrier transport efficiency or reduced nonradiative recombination. Finally, Ln3+ ions have also been used in the fields of photodetectors and luminescent solar concentrators. These indicate the huge potential of rare-earth metals in improving the perovskite optoelectronic device performances.
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Affiliation(s)
- Bobo Li
- College of New Materials and New Energies, Shenzhen Technology University, Shenzhen 518118, China; (B.L.); (X.C.); (B.X.)
| | - Feng Tian
- State Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, Changchun 130012, China; (F.T.); (D.W.); (J.L.); (X.W.)
| | - Xiangqian Cui
- College of New Materials and New Energies, Shenzhen Technology University, Shenzhen 518118, China; (B.L.); (X.C.); (B.X.)
| | - Boyuan Xiang
- College of New Materials and New Energies, Shenzhen Technology University, Shenzhen 518118, China; (B.L.); (X.C.); (B.X.)
| | - Hongbin Zhao
- State Key Laboratory of Advanced Materials for Smart Sensing, General Research Institute for Nonferrous Metals, Beijing 100088, China;
| | - Haixi Zhang
- School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen 518172, China;
| | - Dengkui Wang
- State Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, Changchun 130012, China; (F.T.); (D.W.); (J.L.); (X.W.)
| | - Jinhua Li
- State Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, Changchun 130012, China; (F.T.); (D.W.); (J.L.); (X.W.)
| | - Xiaohua Wang
- State Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, Changchun 130012, China; (F.T.); (D.W.); (J.L.); (X.W.)
| | - Xuan Fang
- State Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, Changchun 130012, China; (F.T.); (D.W.); (J.L.); (X.W.)
- School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen 518172, China;
- Correspondence: (X.F.); (M.Q.)
| | - Mingxia Qiu
- College of New Materials and New Energies, Shenzhen Technology University, Shenzhen 518118, China; (B.L.); (X.C.); (B.X.)
- Correspondence: (X.F.); (M.Q.)
| | - Dongbo Wang
- Department of Opto-Electronic Information Science, School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China;
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6
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Liu Z, Li X, Lu Y, Zhang C, Zhang Y, Huang T, Zhang D, Duan L. In situ-formed tetrahedrally coordinated double-helical metal complexes for improved coordination-activated n-doping. Nat Commun 2022; 13:1215. [PMID: 35260594 PMCID: PMC8904628 DOI: 10.1038/s41467-022-28921-5] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/20/2021] [Accepted: 02/14/2022] [Indexed: 11/09/2022] Open
Abstract
In situ coordination-activated n-doping by air-stable metals in electron-transport organic ligands has proven to be a viable method to achieve Ohmic electron injection for organic optoelectronics. However, the mutual exclusion of ligands with high nucleophilic quality and strong electron affinity limits the injection efficiency. Here, we propose meta-linkage diphenanthroline-type ligands, which not only possess high electron affinity and good electron transport ability but also favour the formation of tetrahedrally coordinated double-helical metal complexes to decrease the ionization energy of air-stable metals. An electron injection layer (EIL) compatible with various cathodes and electron transport materials is developed with silver as an n-dopant, and the injection efficiency outperforms conventional EILs such as lithium compounds. A deep-blue organic light-emitting diode with an optimized EIL achieves a high current efficiency calibrated by the y colour coordinate (0.045) of 237 cd A-1 and a superb LT95 of 104.1 h at 5000 cd m-2.
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Affiliation(s)
- Ziyang Liu
- Key Lab of Organic Optoelectronics and Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, 100084, China
| | - Xiao Li
- Key Lab of Organic Optoelectronics and Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, 100084, China
| | - Yang Lu
- Institute of Drug Discovery Technology, Ningbo University, Ningbo, 315211, China
| | - Chen Zhang
- Key Lab of Organic Optoelectronics and Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, 100084, China
| | - Yuewei Zhang
- Key Lab of Organic Optoelectronics and Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, 100084, China.,Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084, China
| | - Tianyu Huang
- Key Lab of Organic Optoelectronics and Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, 100084, China
| | - Dongdong Zhang
- Key Lab of Organic Optoelectronics and Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, 100084, China. .,Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084, China.
| | - Lian Duan
- Key Lab of Organic Optoelectronics and Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, 100084, China. .,Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084, China.
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Ren M, Cao S, Zhao J, Zou B, Zeng R. Advances and Challenges in Two-Dimensional Organic-Inorganic Hybrid Perovskites Toward High-Performance Light-Emitting Diodes. NANO-MICRO LETTERS 2021; 13:163. [PMID: 34341878 PMCID: PMC8329153 DOI: 10.1007/s40820-021-00685-5] [Citation(s) in RCA: 29] [Impact Index Per Article: 9.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/20/2021] [Accepted: 06/18/2021] [Indexed: 05/19/2023]
Abstract
Two-dimensional (2D) perovskites are known as one of the most promising luminescent materials due to their structural diversity and outstanding optoelectronic properties. Compared with 3D perovskites, 2D perovskites have natural quantum well structures, large exciton binding energy (Eb) and outstanding thermal stability, which shows great potential in the next-generation displays and solid-state lighting. In this review, the fundamental structure, photophysical and electrical properties of 2D perovskite films were illustrated systematically. Based on the advantages of 2D perovskites, such as special energy funnel process, ultra-fast energy transfer, dense film and low efficiency roll-off, the remarkable achievements of 2D perovskite light-emitting diodes (PeLEDs) are summarized, and exciting challenges of 2D perovskite are also discussed. An outlook on further improving the efficiency of pure-blue PeLEDs, enhancing the operational stability of PeLEDs and reducing the toxicity to push this field forward was also provided. This review provides an overview of the recent developments of 2D perovskite materials and LED applications, and outlining challenges for achieving the high-performance devices.
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Affiliation(s)
- Miao Ren
- School of Physical Science and Technology, MOE Key Laboratory of New Processing Technology for Non-Ferrous Metals and Materials, Guangxi Key Laboratory of Processing for Non-Ferrous Metals and Featured Materials, Guangxi University, Nanning, 530004, People's Republic of China
| | - Sheng Cao
- School of Physical Science and Technology, MOE Key Laboratory of New Processing Technology for Non-Ferrous Metals and Materials, Guangxi Key Laboratory of Processing for Non-Ferrous Metals and Featured Materials, Guangxi University, Nanning, 530004, People's Republic of China
| | - Jialong Zhao
- School of Physical Science and Technology, MOE Key Laboratory of New Processing Technology for Non-Ferrous Metals and Materials, Guangxi Key Laboratory of Processing for Non-Ferrous Metals and Featured Materials, Guangxi University, Nanning, 530004, People's Republic of China
| | - Bingsuo Zou
- School of Physical Science and Technology, MOE Key Laboratory of New Processing Technology for Non-Ferrous Metals and Materials, Guangxi Key Laboratory of Processing for Non-Ferrous Metals and Featured Materials, Guangxi University, Nanning, 530004, People's Republic of China
| | - Ruosheng Zeng
- School of Physical Science and Technology, MOE Key Laboratory of New Processing Technology for Non-Ferrous Metals and Materials, Guangxi Key Laboratory of Processing for Non-Ferrous Metals and Featured Materials, Guangxi University, Nanning, 530004, People's Republic of China.
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8
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Worku M, Ben-Akacha A, Blessed Shonde T, Liu H, Ma B. The Past, Present, and Future of Metal Halide Perovskite Light‐Emitting Diodes. SMALL SCIENCE 2021. [DOI: 10.1002/smsc.202000072] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/14/2022] Open
Affiliation(s)
- Michael Worku
- Materials Science and Engineering Program Florida State University Tallahassee FL 32306 USA
| | - Azza Ben-Akacha
- Department of Chemistry and Biochemistry Florida State University Tallahassee FL 32306 USA
| | - Tunde Blessed Shonde
- Department of Chemistry and Biochemistry Florida State University Tallahassee FL 32306 USA
| | - He Liu
- Department of Chemistry and Biochemistry Florida State University Tallahassee FL 32306 USA
| | - Biwu Ma
- Materials Science and Engineering Program Florida State University Tallahassee FL 32306 USA
- Department of Chemistry and Biochemistry Florida State University Tallahassee FL 32306 USA
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9
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Recent Advances on Cyan‐Emitting (480 ≤
λ
≤ 520 nm) Metal Halide Perovskite Materials. SMALL SCIENCE 2021. [DOI: 10.1002/smsc.202000077] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/07/2022] Open
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10
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Guo Z, Zhou H. Research Progress of Composition and Structure Design in Perovskites for High Performance Light-emitting Diodes. ACTA CHIMICA SINICA 2021. [DOI: 10.6023/a20100463] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/24/2022]
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