Realizing a High ZT of 1.6 in N-Type Mg3Sb2-Based Zintl Compounds through Mn and Se Codoping

Low-Cost Magnesium-Based Thermoelectric Materials: Progress, Challenges, and Enhancements

Magnesium-based thermoelectric (TE) materials have attracted considerable interest due to their high ZT values, coupled with their low cost, widespread availability, nontoxicity, and low density. In this review, we provide a succinct overview of the advances and strategies pertaining to the development of Mg-based materials aimed at enhancing their performance. Following this, we delve into the major challenges posed by the severe working conditions, such as high temperature and thermal cycling, which adversely impact the behavior and long-term stability of the TE modules. Challenges include issues like the lack of mechanical strength, chemical instability, and unreliable contact. Subsequently, we focus on the key methodologies aimed at addressing these challenges to facilitate the broader application of the TE modules. These include boosting the mechanical strength, especially the toughness, through grain refining and additions of second phases. Furthermore, strategies targeted at enhancing the chemical stability through coatings and modifying the microstructure, as well as improving the contact design and materials, are discussed. In the end, we highlight the perspectives for boosting the practical applications of Mg-based TE materials in the future.

Simultaneously Boosting Thermoelectric and Mechanical Properties of n-Type Mg3Sb1.5Bi0.5-Based Zintls through Energy-Band and Defect Engineering

Incorporating donor doping into Mg3Sb1.5Bi0.5 to achieve n-type conductivity is one of the crucial strategies for performance enhancement. In pursuit of higher thermoelectric performance, we herein report co-doping with Te and Y to optimize the thermoelectric properties of Mg3Sb1.5Bi0.5, achieving a peak ZT exceeding 1.7 at 703 K in Y0.01Mg3.19Sb1.5Bi0.47Te0.03. Guided by first-principles calculations for compositional design, we find that Te-doping shifts the Fermi level into the conduction band, resulting in n-type semiconductor behavior, while Y-doping further shifts the Fermi level into the conduction band and reduces the bandgap, leading to enhanced thermoelectric performance with a power factor as high as >20 μW cm-1 K-2. Additionally, through detailed micro/nanostructure characterizations, we discover that Te and Y co-doping induces dense crystal and lattice defects, including local lattice distortions and strains caused by point defects, and densely distributed grain boundaries between nanocrystalline domains. These defects efficiently scatter phonons of various wavelengths, resulting in a low thermal conductivity of 0.83 W m-1 K-1 and ultimately achieving a high ZT. Furthermore, the dense lattice defects induced by co-doping can further strengthen the mechanical performance, which is crucial for its service in devices. This work provides guidance for the composition and structure design of thermoelectric materials.

Mg Compensating Design in the Melting-Sintering Method For High-Performance Mg3 (Bi, Sb)2 Thermoelectric Devices

N-type Mg3 (Bi, Sb)2 -based thermoelectric (TE) alloys show great promise for solid-state power generation and refrigeration, owing to their excellent figure-of-merit (ZT) and using cheap Mg. However, their rigorous preparation conditions and poor thermal stability limit their large-scale applications. Here, this work develops an Mg compensating strategy to realize n-type Mg3 (Bi, Sb)2 by a facile melting-sintering approach. "2D roadmaps" of TE parameters versus sintering temperature and time are plotted to understand the Mg-vacancy-formation and Mg-diffusion mechanisms. Under this guidance, high weight mobility of 347 cm2  V-1  s-1 and power factor of 34 µW cm-1  K-2 can be obtained for Mg3.05 Bi1.99 Te0.01 , and a peak ZT≈1.55 at 723 K and average ZT≈1.25 within 323-723 K can be obtained for Mg3.05 (Sb0.75 Bi0.25 )1.99 Te0.01 . Moreover, this Mg compensating strategy can also improve the interfacial connecting and thermal stability of corresponding Mg3 (Bi, Sb)2 /Fe TE legs. As a consequence, this work fabricates an 8-pair Mg3 Sb2 -GeTe-based power-generation device reaching an energy conversion efficiency of ≈5.0% at a temperature difference of 439 K, and a one-pair Mg3 Sb2 -Bi2 Te3 -based cooling device reaching -10.7 °C at the cold side. This work paves a facile way to obtain Mg3 Sb2 -based TE devices at low cost and also provides a guide to optimize the off-stoichiometric defects in other TE materials.

Strained Lamellar Structures Leading to Improved Thermoelectric Performance in Mg3Sb1.5Bi0.5

Mg3Sb2-xBix solid-solutions represent an important class of thermoelectric (TE) materials due to their high efficiency and variable operating temperature range. Of particular significance for midtemperature applications is the Mg3Sb1.5Bi0.5 composition whose superior thermoelectric (TE) performance is attributed to the complex conduction band edge in conjunction with alloy dominated phonon scattering. In this work, we show that microstructure also plays a significant role in lowering the lattice thermal conductivity which in turn affects the overall TE performance (change in peak zT values between 1.1 and 1.4 have been observed). Temperature dependent TE properties of Mg3+xSb1.5Bi0.5 compositions with varying nominal Mg content (x = 0.2, 0.3, 0.4) have been studied. A marked reduction of the lattice thermal conductivity (κL) is observed in compositions with low nominal Mg content (x = 0.2), which is due to the presence of lamellar structures within the grains. These lamellar regions are isostructural to the matrix with a low misfit angle and represent compositional fluctuations in the Bi to Sb ratio. Both the size (200 nm-500 nm) and the interfacial strain contribute to the enhanced phonon scattering. A quantitative estimate of κL reduction due to these structures have been carried out using a mean free path (MFP) spectrum analysis which reveal a good match with experiments at room temperature. Further, the electrical properties are not influenced by these lamellar structures as observed from the similar power-factor (S2σ) and weighted mobilities in all of the compositions. This is due to their similar orientation to the adjacent matrix region. Thus, the zT parameter in the various compositions with similar carrier concentration can be significantly altered (∼25%) by adjusting the nominal Mg content. The results demonstrate that preferential phonon scattering by microstructure modification can be a new route for property improvement in Mg3+xSb2-yBiy solid-solutions.

Accessing the thermal conductivities of Sb2Te3 and Bi2Te3/Sb2Te3 superlattices by molecular dynamics simulations with a deep neural network potential

Phonon thermal transport is a key feature for the operation of thermoelectric materials, but it is challenging to accurately calculate the thermal conductivity of materials with strong anharmonicity or large cells. In this work, a deep neural network potential (NNP) is developed using a dataset based on density functional theory (DFT) and applied to describe the lattice dynamics of Sb₂Te₃ and Bi₂Te₃/Sb₂Te₃ superlattices. The lattice thermal conductivities of Sb₂Te₃ are first predicted using equilibrium molecular dynamics (EMD) simulations combined with an NNP and the results match well with experimental values. Then, through further exploration of weighted phase spaces and the Grüneisen parameter, we find that there is a stronger anharmonicity in the out-of-plane direction in Sb₂Te₃, which is the reason why the thermal conductivities are overestimated more in the out-of-plane direction than in the in-plane direction by solving the phonon Boltzmann transport equation (BTE) with only three-phonon scattering processes being considered. More importantly, the lattice thermal conductivities of Bi₂Te₃/Sb₂Te₃ superlattices with different periods are accurately predicted using non-equilibrium molecular dynamics (NEMD) simulations together with an NNP, which serves as a good example to explore the thermal transport physics of superlattices using a deep neural network potential.

Insight into the Strategies for Improving the Thermal Stability of Efficient N-Type Mg3Sb2-Based Thermoelectric Materials

N-type Mg₃(Sb,Bi)₂ compounds have recently been demonstrated as promising low-cost efficient thermoelectric materials in low and intermediate temperature ranges; however, the thermal stability of this type of material still poses a great challenge for practical applications. In this work, we conduct a systematic investigation of the thermal stability of several high-performing n-type Mg₃(Sb,Bi)₂-based thermoelectric materials in both bulk and powdered forms using X-ray and neutron diffraction. It is found that the bulk sample exhibits a much slower degradation rate based on the evolution of the secondary Bi/Sb phase in comparison with the powdered sample, revealing a clear kinetic effect. Moreover, the surface of the bulk sample will gradually become Mg-poor or Bi-rich even at room temperature when exposed to air for a long time, highlighting the importance of surface encapsulation for applications. An underlying mechanism based on the Mg loss/migration is proposed to account for the property degradation. Importantly, to address the property degradation, we discuss possible solutions and propose Mg-vapor annealing as an effective approach to enhance thermal stability by suppressing the Mg loss/migration through saturating grains and grain boundaries with elemental Mg. We expect a combination of the Mg-vapor annealing and surface coating to further improve the long-term thermal stability. This work sheds light on the strategies for enhancing the long-term stability of n-type Mg₃Sb₂-based thermoelectrics for practical applications.