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Polumati G, Kolli CSR, Flores M, Kumar A, Sanghvi A, Bugallo ADL, Sahatiya P. Mixed-Dimensional van der Waals Heterostructure (2D ReS 2/0D MoS 2 Quantum Dots)-Based Broad Spectral Range with Ultrahigh-Responsive Photodetector. ACS APPLIED MATERIALS & INTERFACES 2024; 16:19261-19270. [PMID: 38588397 DOI: 10.1021/acsami.4c02295] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/10/2024]
Abstract
The remarkable properties of two-dimensional (2D) materials have led to significant advancements in photodetection and optoelectronics research. Currently, there are many successful methods that are employed to improve the responsivity of photodetectors, but the limited spectral range of the device remains a limitation. This work demonstrates the development of a mixed-dimensional (2D/0D) hybrid photodetector device fabricated using chemical vapor deposition (CVD)-grown monolayer ReS2 and solution-processed MoS2 quantum dots (QDs). The mixed dimensionality of 2D (ReS2) and zero-dimensional (0D) MoS2 QDs assist in improving the spectral range of the device [ultraviolet (360 nm) to near-infrared (780 nm)]. Further, due to the work function difference between ReS2 and MoS2 QDs, the built-in electric field across the mixed-dimensional interface promotes effective charge separation and migration, resulting in improved responsivities of the device. The calculated responsivities of the fabricated photodetector are 5.4 × 102, 3.3 × 102, and 2.6 × 102 A/W when subjected to visible, UV, and NIR light illumination, which is remarkable when compared to the existing reports on broadband photodetection. The mixed-dimensionality heterostructure coupled with contact engineering paves the way for highly responsive broadband photodetectors for potential applications in security, healthcare, etc.
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Affiliation(s)
- Gowtham Polumati
- Department of Electrical and Electronics Engineering, BITS Pilani, Hyderabad Campus, Hyderabad 500078, India
| | - Chandra Sekhar Reddy Kolli
- Department of Electrical and Electronics Engineering, BITS Pilani, Hyderabad Campus, Hyderabad 500078, India
| | - Mario Flores
- Centro de Física Aplicada y Tecnología Avanzada, Universidad Nacional Autónoma de México, A.P. 1-1010, Querétaro, Qro CP 76000, México
| | - Aayush Kumar
- Department of Electrical and Electronics Engineering, BITS Pilani, Hyderabad Campus, Hyderabad 500078, India
| | - Aarnav Sanghvi
- Department of Electrical and Electronics Engineering, BITS Pilani, Hyderabad Campus, Hyderabad 500078, India
| | - Andres De Luna Bugallo
- Centro de Física Aplicada y Tecnología Avanzada, Universidad Nacional Autónoma de México, A.P. 1-1010, Querétaro, Qro CP 76000, México
| | - Parikshit Sahatiya
- Department of Electrical and Electronics Engineering, BITS Pilani, Hyderabad Campus, Hyderabad 500078, India
- Materials Center for Sustainable Energy & Environment, Birla Institute of Technology and Science Pilani, Hyderabad Campus, Hyderabad 500078, India
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Elahi E, Ahmad M, Dahshan A, Rabeel M, Saleem S, Nguyen VH, Hegazy HH, Aftab S. Contemporary innovations in two-dimensional transition metal dichalcogenide-based P-N junctions for optoelectronics. NANOSCALE 2023; 16:14-43. [PMID: 38018395 DOI: 10.1039/d3nr04547a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/30/2023]
Abstract
Two-dimensional transition metal dichalcogenides (2D-TMDCs) with various physical characteristics have attracted significant interest from the scientific and industrial worlds in the years following Moore's law. The p-n junction is one of the earliest electrical components to be utilized in electronics and optoelectronics, and modern research on 2D materials has renewed interest in it. In this regard, device preparation and application have evolved substantially in this decade. 2D TMDCs provide unprecedented flexibility in the construction of innovative p-n junction device designs, which is not achievable with traditional bulk semiconductors. It has been investigated using 2D TMDCs for various junctions, including homojunctions, heterojunctions, P-I-N junctions, and broken gap junctions. To achieve high-performance p-n junctions, several issues still need to be resolved, such as developing 2D TMDCs of superior quality, raising the rectification ratio and quantum efficiency, and successfully separating the photogenerated electron-hole pairs, among other things. This review comprehensively details the various 2D-based p-n junction geometries investigated with an emphasis on 2D junctions. We investigated the 2D p-n junctions utilized in current rectifiers and photodetectors. To make a comparison of various devices easier, important optoelectronic and electronic features are presented. We thoroughly assessed the review's prospects and challenges for this emerging field of study. This study will serve as a roadmap for more real-world photodetection technology applications.
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Affiliation(s)
- Ehsan Elahi
- Department of Physics & Astronomy and Graphene Research Institute, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul 05006, South Korea.
| | - Muneeb Ahmad
- Department of Electrical Engineering and Convergence Engineering for Intelligent Drone, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul 05006, South Korea
| | - A Dahshan
- Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia
| | - Muhammad Rabeel
- Department of Electrical Engineering and Convergence Engineering for Intelligent Drone, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul 05006, South Korea
| | - Sidra Saleem
- Division of Science Education, Department of Energy Storage/Conversion Engineering for Graduate School, Jeonbuk National University, Jeonju, Jeonbuk 54896, Republic of Korea
| | - Van Huy Nguyen
- Department of Nanotechnology and Advanced Materials Engineering, and H.M.C., Sejong University, Seoul 05006, South Korea
| | - H H Hegazy
- Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia
- Research Centre for Advanced Materials Science (RCAMS), King Khalid University, P. O. Box 9004, Abha 61413, Saudi Arabia
| | - Sikandar Aftab
- Department of Intelligent Mechatronics Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul, 05006 South Korea.
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Wang W, Wang W, Meng Y, Quan Q, Lai Z, Li D, Xie P, Yip S, Kang X, Bu X, Chen D, Liu C, Ho JC. Mixed-Dimensional Anti-ambipolar Phototransistors Based on 1D GaAsSb/2D MoS 2 Heterojunctions. ACS NANO 2022; 16:11036-11048. [PMID: 35758898 DOI: 10.1021/acsnano.2c03673] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The incapability of modulating the photoresponse of assembled heterostructure devices has remained a challenge for the development of optoelectronics with multifunctionality. Here, a gate-tunable and anti-ambipolar phototransistor is reported based on 1D GaAsSb nanowire/2D MoS2 nanoflake mixed-dimensional van der Waals heterojunctions. The resulting heterojunction shows apparently asymmetric control over the anti-ambipolar transfer characteristics, possessing potential to implement electronic functions in logic circuits. Meanwhile, such an anti-ambipolar device allows the synchronous adjustment of band slope and depletion regions by gating in both components, thereby giving rise to the gate-tunability of the photoresponse. Coupled with the synergistic effect of the materials in different dimensionality, the hybrid heterojunction can be readily modulated by the external gate to achieve a high-performance photodetector exhibiting a large on/off current ratio of 4 × 104, fast response of 50 μs, and high detectivity of 1.64 × 1011 Jones. Due to the formation of type-II band alignment and strong interfacial coupling, a prominent photovoltaic response is explored in the heterojunction as well. Finally, a visible image sensor based on this hybrid device is demonstrated with good imaging capability, suggesting the promising application prospect in future optoelectronic systems.
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Affiliation(s)
- Wei Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Weijun Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - You Meng
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Quan Quan
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Zhengxun Lai
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Dengji Li
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Pengshan Xie
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - SenPo Yip
- Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka 816-8580, Japan
| | - Xiaolin Kang
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Xiuming Bu
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Dong Chen
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Chuntai Liu
- Key Laboratory of Advanced Materials Processing & Mold (Zhengzhou University), Ministry of Education, Zhengzhou 450002, China
| | - Johnny C Ho
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
- Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka 816-8580, Japan
- State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
- Hong Kong Institute for Advanced Study, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
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Jiang J, Cheng R, Yin L, Wen Y, Wang H, Zhai B, Liu C, Shan C, He J. Van der waals epitaxial growth of two-dimensional PbSe and its high-performance heterostructure devices. Sci Bull (Beijing) 2022; 67:1659-1668. [DOI: 10.1016/j.scib.2022.07.005] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/15/2022] [Revised: 06/02/2022] [Accepted: 06/24/2022] [Indexed: 10/17/2022]
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Kucheriv OI, Grygoruk VI, Oliynyk VV, Zagorodnii VV, Launets VL, Rotaru A, Gural'skiy IA. A Vanadium Dioxide‐PMMA Composite For Microwave Radiation Switching. Chempluschem 2022; 87:e202200107. [DOI: 10.1002/cplu.202200107] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/28/2022] [Revised: 05/17/2022] [Indexed: 11/06/2022]
Affiliation(s)
- Olesia I. Kucheriv
- Taras Shevchenko National University of Kyiv: Kiivs'kij nacional'nij universitet imeni Tarasa Sevcenka Department of Chemistry UKRAINE
| | - Valery I. Grygoruk
- Taras Shevchenko National University of Kyiv: Kiivs'kij nacional'nij universitet imeni Tarasa Sevcenka Institute of High Technologies UKRAINE
| | - Viktor V. Oliynyk
- Taras Shevchenko National University of Kyiv: Kiivs'kij nacional'nij universitet imeni Tarasa Sevcenka Institute of High Technologies UKRAINE
| | - Volodymyr V. Zagorodnii
- Taras Shevchenko National University of Kyiv: Kiivs'kij nacional'nij universitet imeni Tarasa Sevcenka Institute of High Technologies UKRAINE
| | - Vilen L. Launets
- Taras Shevchenko National University of Kyiv: Kiivs'kij nacional'nij universitet imeni Tarasa Sevcenka Institute of High Technologies UKRAINE
| | - Aurelian Rotaru
- University of Suceava: Universitatea Stefan cel Mare din Suceava Faculty of Electrical Engineering and Computer Science & Research Center MANSiD UKRAINE
| | - Il'ya A. Gural'skiy
- Taras Shevchenko National University of Kyiv: Kiivs'kij nacional'nij universitet imeni Tarasa Sevcenka Department of Chemistry 64 Volodymyrska St. 01601 Kyiv UKRAINE
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Reddy B KS, Veeralingam S, Borse PH, Badhulika S. 1D NiO-3D Fe 2O 3mixed dimensional heterostructure for fast response flexible broadband photodetector. NANOTECHNOLOGY 2022; 33:235201. [PMID: 35203065 DOI: 10.1088/1361-6528/ac5838] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/30/2021] [Accepted: 02/24/2022] [Indexed: 06/14/2023]
Abstract
Conventional heterojunction photodetectors rely on planar junction architecture which suffer from low interfacial contact area, inferior light absorption characteristics and complex fabrication schemes. Heterojunctions based on mixed dimensional nanostructures such as 0D-1D, 1D-2D, 1D-3D etc have recently garnered exceptional research interest owing to their atomically sharp interfaces, tunable junction properties such as enhanced light absorption cross-section. In this work, a flexible broadband UV-vis photodetector employing mixed dimensional heterostructure of 1D NiO nanofibers and 3D Fe2O3nanoparticles is fabricated. NiO nanofibers were synthesized via economical and scalable electro-spinning technique and made composite with Fe2O3nanoclusters for hetero-structure fabrication. The optical absorption spectra of NiO nanofibers and Fe2O3nanoparticles exhibit peak absorption in UV and visible spectra, respectively. The as-fabricated photodetector displays quick response times of 0.09 s and 0.18 s and responsivities of 5.7 mA W-1(0.03 mW cm-2) and 5.2 mA W-1(0.01 mW cm-2) for UV and visible spectra, respectively. The fabricated NiO-Fe2O3device also exhibits excellent detectivity in the order of 1012jones. The superior performance of the device is ascribed to the type-II heterojunction between NiO-Fe2O3nanostructures, which results in the localized built-in potential at their interface, that aids in the effective carrier separation and transportation. Further, the flexible photodetector displays excellent robustness when bent over ∼1000 cycles thereby proving its potential towards developing reliable, diverse functional opto-electronic devices.
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Affiliation(s)
- Kumaar Swamy Reddy B
- Department of Electrical Engineering, Indian Institute of Technology-Hyderabad, Kandi, Sangareddy, Hyderabad, India
- Centre for Nanomaterials, International Advanced Research Centre for Powder, Metallurgy & New Materials, Balapur, Hyderabad, India
| | - Sushmitha Veeralingam
- Department of Electrical Engineering, Indian Institute of Technology-Hyderabad, Kandi, Sangareddy, Hyderabad, India
| | - Pramod H Borse
- Centre for Nanomaterials, International Advanced Research Centre for Powder, Metallurgy & New Materials, Balapur, Hyderabad, India
| | - Sushmee Badhulika
- Department of Electrical Engineering, Indian Institute of Technology-Hyderabad, Kandi, Sangareddy, Hyderabad, India
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Affiliation(s)
- Zhongzhou Cheng
- MIIT Key Laboratory of Advanced Display Materials and Devices Institute of Optoelectronics & Nanomaterials College of Material Science and Engineering Nanjing University of Science and Technology Nanjing 210094 China
| | - Tong Zhao
- MIIT Key Laboratory of Advanced Display Materials and Devices Institute of Optoelectronics & Nanomaterials College of Material Science and Engineering Nanjing University of Science and Technology Nanjing 210094 China
| | - Haibo Zeng
- MIIT Key Laboratory of Advanced Display Materials and Devices Institute of Optoelectronics & Nanomaterials College of Material Science and Engineering Nanjing University of Science and Technology Nanjing 210094 China
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Wang Y, Yang Z, Li H, Li S, Zhi Y, Yan Z, Huang X, Wei X, Tang W, Wu Z. Ultrasensitive Flexible Solar-Blind Photodetectors Based on Graphene/Amorphous Ga 2O 3 van der Waals Heterojunctions. ACS APPLIED MATERIALS & INTERFACES 2020; 12:47714-47720. [PMID: 33045829 DOI: 10.1021/acsami.0c10259] [Citation(s) in RCA: 18] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Flexible photodetectors (PDs) have become the latest research interest owing to their potential applications in future implantable sensors and foldable/wearable optoelectronics. Ga2O3, an emerging ultrawide band gap semiconductor, is considered as the native photosensitive material for solar-blind PDs. The reported fabrication temperature of Ga2O3 films is usually above 600 °C, which hinders its practical application for flexible devices. In this work, flexible PDs based on graphene/amorphous Ga2O3 van der Waals heterojunctions are fabricated, which demonstrate promising photoresponse to solar-blind ultraviolet light. The device yields a high photo-to-dark current ratio (∼105) and large responsivity (22.75 A/W) under 254 nm light illumination, which could be ascribed to the efficient photogenerated electron-hole pair separation by the strong built-in field. Moreover, flexible PDs also show long-term environmental stability and outstanding mechanical flexibility without any encapsulation. Our work provides a new potential candidate for realizing cost-effective high-performance flexible optoelectronic applications.
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Affiliation(s)
- Yuehui Wang
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, P. R. China
| | - Zhibin Yang
- Center for Terahertz Waves and College of Precision Instrument and Optoelectronics Engineering, Tianjin University, Tianjin 300072, P. R. China
| | - Haoran Li
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, P. R. China
| | - Shan Li
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, P. R. China
| | - Yusong Zhi
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, P. R. China
| | - Zuyong Yan
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, P. R. China
| | - Xu Huang
- State Key Laboratory of Environment-Friendly Energy Materials, Southwest University of Science and Technology, Mianyang 621010, Sichuan, P. R. China
| | - Xianhua Wei
- State Key Laboratory of Environment-Friendly Energy Materials, Southwest University of Science and Technology, Mianyang 621010, Sichuan, P. R. China
| | - Weihua Tang
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, P. R. China
| | - Zhenping Wu
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, P. R. China
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