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Ngai JHL, Li Z, Wang J, He J, Ding J, Li Y. Strategic Design of Hemi-Isoindigo Polymer for a Highly Sensitive and Selective All-Printed Flexible Nitrogen Dioxide Chemiresistive Sensor. SMALL METHODS 2024; 8:e2301521. [PMID: 38319029 DOI: 10.1002/smtd.202301521] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/02/2023] [Revised: 01/15/2024] [Indexed: 02/07/2024]
Abstract
The study has developed two hemi-isoindigo (HID)-based polymers for printed flexible resistor-type nitrogen oxide (NO2) sensors: poly[2-ethylhexyl 3-((3'",4'-bis(dodecyloxy)-3,4-dimethoxy-[2,2':5',2'"-terthiophen]-5-yl)methylene)-2-oxoindoline-1-carboxylate] (P1) and poly[2-ethylhexyl 2-oxo-3-((3,3'",4,4'-tetrakis(dodecyloxy)-[2,2':5',2'"-terthiophen]-5-yl)methylene)indoline-1-carboxylate] (P2). These polymers feature thermally removable carbamate side chains on the HID units, providing solubility and creating molecular cavities after thermal annealing. These cavities enhance NO2 diffusion, and the liberated unsubstituted amide ─C(═O)NH─ groups readily form robust double hydrogen bonds (DHB), as demonstrated by computer simulations. Furthermore, both polymers possess elevated highest occupied molecular orbital (HOMO) energy levels of -4.74 and -4.77 eV, making them highly susceptible to p-doping by NO2. Gas sensors fabricated from P1 and P2 films, anneal under optimized conditions to partially remove carbamate side chains, exhibit remarkable sensitivities of +1400% ppm-1 and +3844% ppm-1, and low detection limit (LOD) values of 514 ppb and 38.9 ppb toward NO2, respectively. These sensors also demonstrate excellent selectivity for NO2 over other gases.
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Affiliation(s)
- Jenner H L Ngai
- Department of Chemical Engineering and Waterloo Institute of Nanotechnology, (WIN), University of Waterloo, 200 University Ave West, Waterloo, N2L 3G1, Canada
- Security and Disruptive Technologies, National Research Council Canada, 1200 Montreal Road, Ottawa, Ontario, K1A 0R6, Canada
| | - Zhao Li
- Security and Disruptive Technologies, National Research Council Canada, 1200 Montreal Road, Ottawa, Ontario, K1A 0R6, Canada
| | - Jia Wang
- College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, P. R. China
| | - Jinghui He
- College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, P. R. China
| | - Jianfu Ding
- Security and Disruptive Technologies, National Research Council Canada, 1200 Montreal Road, Ottawa, Ontario, K1A 0R6, Canada
| | - Yuning Li
- Department of Chemical Engineering and Waterloo Institute of Nanotechnology, (WIN), University of Waterloo, 200 University Ave West, Waterloo, N2L 3G1, Canada
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Song J, Lu H, Liu M, Hu H, Jiang J, Zhang L, Li H. Dopant Enhanced Conjugated Polymer Thin Film for Low-Power, Flexible and Wearable DMMP Sensor. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2308595. [PMID: 38050930 DOI: 10.1002/smll.202308595] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/26/2023] [Revised: 11/15/2023] [Indexed: 12/07/2023]
Abstract
Conjugated polymer has the potential to be applied on flexible devices as an active layer, but further investigation is still hindered by poor conductivity and mechanical stability. Here, this work demonstrates a dopant-enhanced conductive polymer thin film and its application in dimethyl methylphosphonate (DMMP) sensor. Among five comparable polymers this work employs, poly(bisdodecylthioquaterthiophene) (PQTS12) achieves the highest doping efficiency after doped by FeCl3, with the conductivity increasing by about five orders of magnitude. The changes in Young's modulus are also considered to optimize the conductivity and flexibility of this thin film, and finally the decay of conductivity is only 9.2% after 3000 times of mechanical bending. This work applies this thin film as the active layer of the DMMP gas sensor, which could be operated under 1 mV driving voltage and 28 nW power consumption, with a sustainable durability against bending and compression. In addition, this sensor is provided with alarm capability while exposed to the DMMP atmospheres at different hazard levels. This work expects that this general approach could offer solutions for the fabrication of low-power and flexible gas sensors, and provide guidance for next-generation wearable devices with broader applications.
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Affiliation(s)
- Jian Song
- School of microelectronics, Shanghai University, Shanghai, 201800, China
- Shanghai Engineering Research Center of Organ Repair, Shanghai University, Shanghai, 201800, China
| | - Huimin Lu
- School of microelectronics, Shanghai University, Shanghai, 201800, China
| | - Meng Liu
- College of Chemistry and Materials Science, Shanghai Normal University, Shanghai, 200234, China
| | - Hong Hu
- School of microelectronics, Shanghai University, Shanghai, 201800, China
| | - Jingyan Jiang
- College of Big data and Internet, Shenzhen Technology University, Shenzhen, 518118, China
| | - Lei Zhang
- School of microelectronics, Shanghai University, Shanghai, 201800, China
| | - Hui Li
- State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics Chinese Academy of Sciences, Shanghai, 200050, China
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3
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Song Y, Chen N, Jiang Q, Mukhopadhyay T, Wondmagegn W, Klausen RS, Katz HE. Selective Detection of Functionalized Carbon Particles based on Polymer Semiconducting and Conducting Devices as Potential Particulate Matter Sensors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2310527. [PMID: 38050933 DOI: 10.1002/smll.202310527] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/16/2023] [Indexed: 12/07/2023]
Abstract
This paper reports a new mechanism for particulate matter detection and identification. Three types of carbon particles are synthesized with different functional groups to mimic the real particulates in atmospheric aerosol. After exposing polymer-based organic devices in organic field effect transistor (OFET) architectures to the particle mist, the sensitivity and selectivity of the detection of different types of particles are shown by the current changes extracted from the transfer curves. The results indicate that the sensitivity of the devices is related to the structure and functional groups of the organic semiconducting layers, as well as the morphology. The predominant response is simulated by a model that yielded values of charge carrier density increase and charge carriers delivered per unit mass of particles. The research points out that polymer semiconductor devices have the ability to selectively detect particles with multiple functional groups, which reveals a future direction for selective detection of particulate matter.
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Affiliation(s)
- Yunjia Song
- Department of Materials Science and Engineering, Johns Hopkins University, 206 Maryland Hall, 3400 North Charles Street, Baltimore, MD, 21218, USA
| | - Nan Chen
- Department of Materials Science and Engineering, Johns Hopkins University, 206 Maryland Hall, 3400 North Charles Street, Baltimore, MD, 21218, USA
| | - Qifeng Jiang
- Department of Chemistry, Johns Hopkins University, 3400 North Charles Street, Baltimore, MD, 21218, USA
| | - Tushita Mukhopadhyay
- Department of Materials Science and Engineering, Johns Hopkins University, 206 Maryland Hall, 3400 North Charles Street, Baltimore, MD, 21218, USA
| | - Wudyalew Wondmagegn
- Department of Electrical and Computer Engineering, The College of New Jersey, Ewing, NJ, 08628, USA
| | - Rebekka S Klausen
- Department of Chemistry, Johns Hopkins University, 3400 North Charles Street, Baltimore, MD, 21218, USA
| | - Howard E Katz
- Department of Materials Science and Engineering, Johns Hopkins University, 206 Maryland Hall, 3400 North Charles Street, Baltimore, MD, 21218, USA
- Department of Chemistry, Johns Hopkins University, 3400 North Charles Street, Baltimore, MD, 21218, USA
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4
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Bond CR, Katz HE, Frydrych DJ, Rose DBG, Miranda D. Polymeric Semiconductor in Field-Effect Transistors Utilizing Flexible and High-Surface Area Expanded Poly(tetrafluoroethylene) Membrane Gate Dielectrics. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38437591 DOI: 10.1021/acsami.3c18777] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/06/2024]
Abstract
Organic field-effect transistors (OFETs) were fabricated using three high-surface area and flexible expanded-poly(tetrafluoroethylene) (ePTFE) membranes in gate dielectrics, along with the semiconducting polymer poly[2,5-bis(2-octyldodecyl)pyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione-3,6-diyl)-alt-(2,2':5',2″:5″,2‴-quaterthiophen-5,5‴-diyl)] (PDPP4T). The transistor behavior of these devices was investigated following annealing at 50, 100, 150, and 200 °C, all sustained for 1 h. For annealing temperatures above 50 °C, the OFETs displayed improved transistor behavior and a significant increase in output current while maintaining similar magnitudes of Vth shifts when subjected to static voltage compared to those kept at ambient temperature. We also tested the response to NO2 gas for further characterization and for possible applications. The ePTFE-PDPP4T interface of each membrane was characterized via scanning electron microscopy for all four annealing temperatures to derive a model for the hole mobility of the ePTFE-PDPP4T OFETs that accounts for the microporous structure of the ePTFE and consequently adjusts the channel width of the OFET. Using this model, a maximum hole mobility of 1.8 ± 1.0 cm2/V s was calculated for the polymer in an ePTFE-PDPP4T OFET annealed at 200 °C, whereas a PDPP4T OFET using only the native silicon wafer oxide as a gate dielectric exhibited a hole mobility of just 0.09 ± 0.03 cm2/V s at the same annealing condition. This work demonstrates that responsive semiconducting polymer films can be deposited on nominally nonwetting and extremely bendable membranes, and the charge carrier mobility can be significantly increased compared to their as-prepared state by using thermally durable polymer membranes with unique microstructures as gate dielectrics.
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Affiliation(s)
- Christopher R Bond
- Department of Materials Science and Engineering, Johns Hopkins University, Baltimore, Maryland 21218, United States
| | - Howard E Katz
- Department of Materials Science and Engineering, Johns Hopkins University, Baltimore, Maryland 21218, United States
| | | | - David B G Rose
- W. L. Gore and Associates, Elkton, Maryland 21922, United States
| | - Daniel Miranda
- W. L. Gore and Associates, Elkton, Maryland 21922, United States
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Afzal T, Iqbal MJ, Almutairi BS, Zohaib M, Nadeem M, Raza MA, Naseem S. Tuning phase separation in DPPDTT/PMMA blend to achieve molecular self-assembly in the conducting polymer for organic field effect transistors. J Chem Phys 2024; 160:034902. [PMID: 38230950 DOI: 10.1063/5.0184290] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/25/2023] [Accepted: 12/25/2023] [Indexed: 01/18/2024] Open
Abstract
The semiconductor/insulator blends for organic field-effect transistors are a potential solution to improve the charge transport in the active layer by inducing phase separation in the blends. However, the technique is less investigated for long-chain conducting polymers such as Poly[2,5-(2-octyldodecyl)-3,6-diketopyrrolopyrrole-alt-5,5-(2,5-di(thien-2-yl)thieno [3,2-b]thiophene)] (DPPDTT), and lateral phase separation is generally reported due to the instability during solvent evaporation, which results in degraded device performance. Herein, we report how to tailor the dominant mechanism of phase separation in such blends and the molecular assembly of the polymer. For DPPDTT/PMMA blends, we found that for higher DPPDTT concentrations (more than 75%) where the vertical phase separation mechanism is dominant, PMMA assisted in the self-assembly of DPPDTT to form nanowires and micro-transport channels on top of PMMA. The formation of nanowires yielded 13 times higher mobility as compared to pristine devices. For blend ratios with DPPDTT ≤ 50%, both the competing mechanisms, vertical and lateral phase separation, are taking place. It resulted in somewhat lower charge carrier mobilities. Hence, our results show that by systematic tuning of the blend ratio, PMMA can act as an excellent binding material in long-chain polymers such as DPPDTT and produce vertically stratified and aligned structures to ensure high mobility devices.
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Affiliation(s)
- Tahmina Afzal
- Centre of Excellence in Solid State Physics, University of the Punjab, Quaid-e-Azam Campus, Lahore 54590, Pakistan
| | - M Javaid Iqbal
- Centre of Excellence in Solid State Physics, University of the Punjab, Quaid-e-Azam Campus, Lahore 54590, Pakistan
| | - Badriah S Almutairi
- Department of Physics, College of Science, Princess Nourah Bint Abdulrahman University, P.O. Box 84428, Riyadh 11671, Saudi Arabia
| | - Muhammad Zohaib
- Centre of Excellence in Solid State Physics, University of the Punjab, Quaid-e-Azam Campus, Lahore 54590, Pakistan
| | - Muhammad Nadeem
- Centre of Excellence in Solid State Physics, University of the Punjab, Quaid-e-Azam Campus, Lahore 54590, Pakistan
| | - Mohsin Ali Raza
- Department of Metallurgy and Materials Engineering, University of the Punjab, Lahore 54590, Pakistan
| | - Shahzad Naseem
- Centre of Excellence in Solid State Physics, University of the Punjab, Quaid-e-Azam Campus, Lahore 54590, Pakistan
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Shen Z, Huang W, Li L, Li H, Huang J, Cheng J, Fu Y. Research Progress of Organic Field-Effect Transistor Based Chemical Sensors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2302406. [PMID: 37271887 DOI: 10.1002/smll.202302406] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/21/2023] [Revised: 05/11/2023] [Indexed: 06/06/2023]
Abstract
Due to their high sensitivity and selectivity, chemical sensors have gained significant attention in various fields, including drug security, environmental testing, food safety, and biological medicine. Among them, organic field-effect transistor (OFET) based chemical sensors have emerged as a promising alternative to traditional sensors, exhibiting several advantages such as multi-parameter detection, room temperature operation, miniaturization, flexibility, and portability. This review paper presents recent research progress on OFET-based chemical sensors, highlighting the enhancement of sensor performance, including sensitivity, selectivity, stability, etc. The main improvement programs are improving the internal and external structures of the device, as well as the organic semiconductor layer and dielectric structure. Finally, an outlook on the prospects and challenges of OFET-based chemical sensors is presented.
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Affiliation(s)
- Zhengqi Shen
- State Key Lab of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Wei Huang
- School of Automation Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu, Sichuan, 611731, China
| | - Li Li
- Interdisciplinary Materials Research Center School of Materials Science and Engineering, Tongji University, Shanghai, 201804, China
| | - Huizi Li
- State Key Lab of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jia Huang
- Interdisciplinary Materials Research Center School of Materials Science and Engineering, Tongji University, Shanghai, 201804, China
| | - Jiangong Cheng
- State Key Lab of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yanyan Fu
- State Key Lab of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
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7
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Tran VV, Jeong G, Wi E, Lee D, Chang M. Design and Fabrication of Ultrathin Nanoporous Donor-Acceptor Copolymer-Based Organic Field-Effect Transistors for Enhanced VOC Sensing Performance. ACS APPLIED MATERIALS & INTERFACES 2023; 15:21270-21283. [PMID: 37092808 DOI: 10.1021/acsami.3c00105] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
The development of organic field-effect transistor (OFET) chemical sensors with high sensing performance and good air stability has remained a persistent challenge, thereby hindering their practical application. Herein, an OFET sensor based on a donor-acceptor copolymer is shown to provide high responsivity, sensitivity, and selectivity toward polar volatile organic compounds, as well as good air stability. In detail, a polymer blend of N-alkyl-diketopyrrolo-pyrrole-dithienylthieno[3,2-b]thiophene (DPP-DTT) and polystyrene is coated onto an FET substrate via shearing-assisted phase separation (SAPS) combined with selective solvent etching to fabricate the DPP-DTT-based OFET device having an ultrathin nanoporous structure suitable for gas sensing applications. This is achieved via optimization of the film morphology by varying the shear rate to adjust the dynamic balance between the shear and capillary forces to obtain an ultrathin thickness (∼8 nm) and nanopore size (80 nm) that are favorable for the efficient diffusion and interaction of analytes with the active layer. In particular, the sensor presents high responsivities toward methanol (∼70%), acetone (∼51.3%), ethanol (∼39%), and isopropyl alcohol (IPA) (∼29.8%), along with fast response and recovery times of ∼80 and 234 s, respectively. Moreover, the average sensitivity was determined to be 5.75%/ppm from the linear plot of the responsivity against the methanol concentration in the range of 1-100 ppm. Importantly, the device also exhibits excellent long-term (30-day) air and thermal storage stability, thereby demonstrating its high potential for practical applications.
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Affiliation(s)
- Vinh Van Tran
- Laser and Thermal Engineering Laboratory, Department of Mechanical Engineering, Gachon University, Seongnam 13120, South Korea
| | - Ganghoon Jeong
- Department of Polymer Engineering, Chonnam National University, Gwangju 61186, South Korea
- School of Polymer Science and Engineering, Chonnam National University, Gwangju 61186, South Korea
| | - Eunsol Wi
- Department of Polymer Engineering, Chonnam National University, Gwangju 61186, South Korea
- School of Polymer Science and Engineering, Chonnam National University, Gwangju 61186, South Korea
| | - Daeho Lee
- Laser and Thermal Engineering Laboratory, Department of Mechanical Engineering, Gachon University, Seongnam 13120, South Korea
| | - Mincheol Chang
- Department of Polymer Engineering, Chonnam National University, Gwangju 61186, South Korea
- School of Polymer Science and Engineering, Chonnam National University, Gwangju 61186, South Korea
- Alan G. MacDiarmid Energy Research Institute, Chonnam National University, Gwangju 61186, South Korea
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8
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Sullivan RP, Castellanos-Trejo E, Ma R, Welker ME, Jurchescu OD. Humidity sensors based on molecular rectifiers. NANOSCALE 2022; 15:171-176. [PMID: 36484707 DOI: 10.1039/d2nr04498f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Ambient humidity plays a key role in the health and well-being of us and our surroundings, making it necessary to carefully monitor and control it. To achieve this goal, several types of instruments based on various materials and operating principles have been developed. Reducing the production costs for such systems without affecting their sensitivity and reliability would allow for broader use and greater efficiency. Organic materials are prime candidates for incorporation in humidity sensors given their extraordinary chemical diversity, low cost, and ease of processing. Here, we designed, assembled and tested humidity sensors based on molecular rectifiers that can electrically transduce the changes in the ambient humidity to offer accurate quantitative information in the range of 0 to 70% relative humidity. Their operation relies on the changes occurring in the electric field experienced by the molecular layer upon absorption of the polar water molecules, resulting in modifications in the height and shape of the tunneling barrier. The response is reversible and reproducible upon multiple cycles and, coupled with the simplicity of the device architecture and manufacturing, makes these nanoscale sensors attractive for incorporation in various applications.
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Affiliation(s)
- Ryan P Sullivan
- Department of Physics, Center for Functional Materials, Wake Forest University, Winston-Salem, NC, 27109, USA.
| | - Eduardo Castellanos-Trejo
- Department of Physics, Center for Functional Materials, Wake Forest University, Winston-Salem, NC, 27109, USA.
| | - Renate Ma
- Department of Chemistry, Center for Functional Materials, Wake Forest University, Winston-Salem, NC, 27109, USA
| | - Mark E Welker
- Department of Chemistry, Center for Functional Materials, Wake Forest University, Winston-Salem, NC, 27109, USA
| | - Oana D Jurchescu
- Department of Physics, Center for Functional Materials, Wake Forest University, Winston-Salem, NC, 27109, USA.
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9
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Synthesis of Donor–Acceptor Copolymers Derived from Diketopyrrolopyrrole and Fluorene via Eco-Friendly Direct Arylation: Nonlinear Optical Properties, Transient Absorption Spectroscopy, and Theoretical Modeling. ENERGIES 2022. [DOI: 10.3390/en15113855] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/01/2023]
Abstract
A series of PFDPP copolymers based on fluorene (F) and diketopyrrolopyrrole (DPP) monomers were synthesized via direct arylation polycondensation using Fagnou conditions which involved palladium acetate as catalyst (a gradual catalyst addition of three different percentages were used), potassium carbonate as the base, and neodecanoic acid in N, N-dimethylacetamide. This synthesis provides a low cost compared with traditional methods of transition-metal-catalyzed polymerization. Among the different amounts of catalyst used in the present work, 12% was optimal because it gave the highest reaction yield (81.5%) and one of the highest molecular weights (Mn = 13.8 KDa). Copolymers’ chemical structures, molecular weight distributions, and optical and thermal properties were analyzed. The linear optical properties of PFDPP copolymers resulted very similarly independently to the catalyst amounts used in the synthesis of the PFDPP copolymers: two absorptions bands distinctive of donor–acceptor copolymers, Stokes shifts of 41 nm, a good quantum yield of fluorescence around 47%, and an optical bandgap of 1.7 eV were determined. Electronic nonlinearities were observed in these copolymers with a relatively high two-photon absorption cross-section of 621 GM at 950 nm. The dynamics of excited states and aggregation effects were studied in solutions, nanoparticles, and films of PFDPP. Theoretical calculations modeled the ground-state structures of the (PFDPP)n copolymers with n = 1 to 4 units, determining the charge distribution by the electrostatic potential and modeling the absorption spectra determining the orbital transitions responsible for the experimentally observed leading bands. Experimental and theoretical structure–properties analysis of these donor–acceptor copolymers allowed finding their best synthesis conditions to use them in optoelectronic applications.
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Katz HE. Stabilization and Specification in Polymer Field-Effect Transistor Semiconductors. ACS APPLIED MATERIALS & INTERFACES 2022; 14:15861-15870. [PMID: 35352553 DOI: 10.1021/acsami.2c00649] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The strong and varied chemical interactions between polymer semiconductors and small molecules, and the electronic consequences of these interactions, make polymer organic field-effect transistors (OFETs) attractive as vapor sensing elements. Two hindrances to their wider acceptance and use are their environmental drift and the poor specificity of individual OFETs. Approaches to addressing these two present drawbacks are presented in this Spotlight on Applications. They include the use of semiconducting polymers with greater inherent stability, circuits that add further stability, and arrays that generate patterns that are much more specific to analyte vapors of interest than the individual responses.
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Affiliation(s)
- Howard E Katz
- Johns Hopkins University, 206 Maryland Hall, 3400 North Charles Street, Baltimore, Maryland 21218, United States
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11
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Cheon HJ, An TK, Kim YH. Diketopyrrolopyrrole (DPP)-Based Polymers and Their Organic Field-Effect Transistor Applications: A Review. Macromol Res 2022. [DOI: 10.1007/s13233-022-0015-y] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/18/2022]
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12
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Park KH, Go J, Lim B, Noh Y. Recent progress in lactam‐based polymer semiconductors for organic electronic devices. JOURNAL OF POLYMER SCIENCE 2021. [DOI: 10.1002/pol.20210625] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/17/2022]
Affiliation(s)
- Kwang Hun Park
- Center for Advanced Specialty Chemicals Korea Research Institute of Chemical Technology (KRICT) Ulsan Republic of Korea
| | - Ji‐Young Go
- Department of Chemical Engineering Pohang University of Science and Technology Pohang Republic of Korea
| | - Bogyu Lim
- Center for Advanced Specialty Chemicals Korea Research Institute of Chemical Technology (KRICT) Ulsan Republic of Korea
| | - Yong‐Young Noh
- Department of Chemical Engineering Pohang University of Science and Technology Pohang Republic of Korea
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13
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Zhao X, Sun P, Zhao K. The study of aggregation dynamics of conjugated polymer solutions in UV-vis absorbance spectra by considering the changing rate of average photon energy. Heliyon 2021; 7:e06638. [PMID: 33889772 PMCID: PMC8050370 DOI: 10.1016/j.heliyon.2021.e06638] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/25/2020] [Revised: 12/01/2020] [Accepted: 03/26/2021] [Indexed: 12/22/2022] Open
Abstract
The changing rate of average photon energy ('Eave) can describe the UV-vis absorbance spectra over a wavelength range. During the aggregation process of poly (3-hexylselenophene) (P3HS) and poly (3-hexylthiophene) (P3HT) solutions that form J-aggregates, 'Eave always decrease and the relationship between 'Eave and time is an exponential model. 'Eave can predict the time when the aggregation process is completed or how far the aggregation process is from the completion. Hansen Solubility Parameter (HSP) of the solvent can be used to predict 'Eave of some conjugated polymer solutions without doing experiments. ''E0ave (changing rate of 'Eave at the beginning of the aggregation process) has been calculated to reflect the overall changing trend of 'Eave and reflects the compatibility between solvent and solute. Therefore, 'Eave is suitable to describe the aggregation dynamics of conjugated polymer solutions by evaluating the aggregation process in UV-vis absorbance spectra.
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Affiliation(s)
- Xinyi Zhao
- Zhengzhou University, School of Chemical Engineering, 100 Science Avenue, Zhengzhou, Henan 450002, China
| | - Peiqin Sun
- Zhengzhou University, School of Chemical Engineering, 100 Science Avenue, Zhengzhou, Henan 450002, China
| | - Ke Zhao
- Zhengzhou University, School of Mechanics and Safety Engineering Science, 100 Science Avenue, Zhengzhou, Henan 450002, China
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14
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Zhou J, Järvinen T, Pitkänen O, Kónya Z, Kukovecz A, Kordas K. Composites of ion-in-conjugation polysquaraine and SWCNTs for the detection of H 2S and NH 3 at ppb concentrations. NANOTECHNOLOGY 2021; 32:185502. [PMID: 33624613 DOI: 10.1088/1361-6528/abdf06] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
Abstract
Several different methods are established for the analysis of gases, including optical spectroscopy, photoacoustic spectroscopy as well as colorimetric and resistive sensing, the measurements systems are either too complex or have limited sensitivity. In particular, when the goal is to apply a large number of sensors in networks, it is highly desirable to have devices that are simple, have low cost and energy consumption, yet sensitive and selective to monitor analytes even in traces. Herein, we propose a new type of resistive sensor device based on a composite of single-wall carbon nanotubes and an ion-in-conjugation polymer, poly(1,5-diaminonaphthalene-squaraine), capable of detecting H2S and NH3 in air even at room temperature with a theoretical concentration limit of ∼1 ppb and ∼7 ppb, respectively. Density functional theory calculations revealed that H atoms of the analytes and O atoms of the polymer chain interact and form hydrogen bonds, and the electron withdrawal from the gas molecules by the polymer chain results in the change of its electrical conductivity. To demonstrate the feasibility of the new nanocomposites in sensing, we show the devices for monitoring food safety with good sensor stability of operation for at least 3 months of period of time.
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Affiliation(s)
- Jin Zhou
- Microelectronics Research Unit, Faculty of Information Technology and Electrical Engineering, University of Oulu, PO Box 4500, FI-90014 Oulu, Finland
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Yuvaraja S, Bhyranalyar VN, Bhat SA, Surya SG, Yelamaggad CV, Salama KN. A highly selective electron affinity facilitated H 2S sensor: the marriage of tris(keto-hydrazone) and an organic field-effect transistor. MATERIALS HORIZONS 2021; 8:525-537. [PMID: 34821268 DOI: 10.1039/d0mh01420f] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Conjugated polymers (CPs) are emerging as part of a promising future for gas-sensing applications. However, some of their limitations, such as poor specificity, humidity sensitivity and poor ambient stability, remain persistent. Herein, a novel combination of a polymer-monomer heterostructure, derived from a CP (PDVT-10) and a newly reported monomer [tris(keto-hydrazone)] has been integrated in an organic field-effect transistor (OFET) platform to sense H2S selectively. The hybrid heterostructure shows an unprecedented sensitivity (525% ppm-1) and high selectivity toward H2S gas. In addition, we demonstrated that the PDVT-10/tris(keto-hydrazone) OFET sensor has the lowest limit of detection (1 ppb), excellent ambient stability (∼5% current degradation after 150 days), good response-recovery behavior, and exceptional electrical behavior and gas response reproducibility. This work can help pave the way to incorporate futuristic gas sensors in a multitude of applications.
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Affiliation(s)
- Saravanan Yuvaraja
- Sensors lab, Advanced Membranes and Porous Materials Center, Computer, Electrical and Mathematical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia.
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16
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Feng K, Guo H, Wang J, Shi Y, Wu Z, Su M, Zhang X, Son JH, Woo HY, Guo X. Cyano-Functionalized Bithiophene Imide-Based n-Type Polymer Semiconductors: Synthesis, Structure-Property Correlations, and Thermoelectric Performance. J Am Chem Soc 2021; 143:1539-1552. [PMID: 33445867 DOI: 10.1021/jacs.0c11608] [Citation(s) in RCA: 63] [Impact Index Per Article: 21.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/07/2023]
Abstract
n-Type polymers with deep-positioned lowest unoccupied molecular orbital (LUMO) energy levels are essential for enabling n-type organic thin-film transistors (OTFTs) with high stability and n-type organic thermoelectrics (OTEs) with high doping efficiency and promising thermoelectric performance. Bithiophene imide (BTI) and its derivatives have been demonstrated as promising acceptor units for constructing high-performance n-type polymers. However, the electron-rich thiophene moiety in BTI leads to elevated LUMOs for the resultant polymers and hence limits their n-type performance and intrinsic stability. Herein, we addressed this issue by introducing strong electron-withdrawing cyano functionality on BTI and its derivatives. We have successfully overcome the synthetic challenges and developed a series of novel acceptor building blocks, CNI, CNTI, and CNDTI, which show substantially higher electron deficiencies than does BTI. On the basis of these novel building blocks, acceptor-acceptor type homopolymers and copolymers were successfully synthesized and featured greatly suppressed LUMOs (-3.64 to -4.11 eV) versus that (-3.48 eV) of the control polymer PBTI. Their deep-positioned LUMOs resulted in improved stability in OTFTs and more efficient n-doping in OTEs for the corresponding polymers with a highest electrical conductivity of 23.3 S cm-1 and a power factor of ∼10 μW m-1 K-2. The conductivity and power factor are among the highest values reported for solution-processed molecularly n-doped polymers. The new CNI, CNTI, and CNDTI offer a remarkable platform for constructing n-type polymers, and this study demonstrates that cyano-functionalization of BTI is a very effective strategy for developing polymers with deep-lying LUMOs for high-performance n-type organic electronic devices.
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Affiliation(s)
- Kui Feng
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), No. 1088, Xueyuan Road, Shenzhen, Guangdong 518055, China
| | - Han Guo
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), No. 1088, Xueyuan Road, Shenzhen, Guangdong 518055, China
| | - Junwei Wang
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), No. 1088, Xueyuan Road, Shenzhen, Guangdong 518055, China
| | - Yongqiang Shi
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), No. 1088, Xueyuan Road, Shenzhen, Guangdong 518055, China
| | - Ziang Wu
- Department of Chemistry, Korea University, 145 Anam-Ro, Seongbuk-Gu, Seoul 02841, South Korea
| | - Mengyao Su
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), No. 1088, Xueyuan Road, Shenzhen, Guangdong 518055, China
| | - Xianhe Zhang
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), No. 1088, Xueyuan Road, Shenzhen, Guangdong 518055, China
| | - Jae Hoon Son
- Department of Chemistry, Korea University, 145 Anam-Ro, Seongbuk-Gu, Seoul 02841, South Korea
| | - Han Young Woo
- Department of Chemistry, Korea University, 145 Anam-Ro, Seongbuk-Gu, Seoul 02841, South Korea
| | - Xugang Guo
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), No. 1088, Xueyuan Road, Shenzhen, Guangdong 518055, China
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17
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Liang J, Song Z, Wang S, Zhao X, Tong Y, Ren H, Guo S, Tang Q, Liu Y. Cobweb-like, Ultrathin Porous Polymer Films for Ultrasensitive NO 2 Detection. ACS APPLIED MATERIALS & INTERFACES 2020; 12:52992-53002. [PMID: 33170620 DOI: 10.1021/acsami.0c09821] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Gas sensors based on polymer field-effect transistors (FETs) have drawn much attention owing to the inherent merits of specific selectivity, low cost, and room temperature operation. Ultrathin (<10 nm) and porous polymer semiconductor films offer a golden opportunity for achieving high-performance gas sensors. However, wafer-scale fabrication of such high-quality polymer films is of great challenge and has rarely been realized before. Herein, the first demonstration of 4 in. wafer-scale, cobweb-like, and ultrathin porous polymer films is reported via a one-step phase-inversion process. This approach is extremely simple and universal for constructing various ultrathin porous polymer semiconductor films. Thanks to the abundant pores, ultrathin size, and high charge-transfer efficiency of the prepared polymer films, our gas sensors exhibit many superior advantages, including ultrahigh response (2.46 × 106%), low limit of detection (LOD) (<1 ppm), and excellent selectivity. Thus, the proposed fabrication strategy is exceptionally promising for mass manufacturing of low-cost high-performance polymer FET-based gas sensors.
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Affiliation(s)
- Jing Liang
- Centre for Advanced Optoelectronic Functional Materials Research, and Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China
| | - Zhiqi Song
- School of Mathematics and Statistics, Wuhan University, Wuhan 430072, China
| | - Shuya Wang
- Centre for Advanced Optoelectronic Functional Materials Research, and Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China
| | - Xiaoli Zhao
- Centre for Advanced Optoelectronic Functional Materials Research, and Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China
| | - Yanhong Tong
- Centre for Advanced Optoelectronic Functional Materials Research, and Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China
| | - Hang Ren
- Centre for Advanced Optoelectronic Functional Materials Research, and Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China
| | - Shanlei Guo
- Centre for Advanced Optoelectronic Functional Materials Research, and Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China
| | - Qingxin Tang
- Centre for Advanced Optoelectronic Functional Materials Research, and Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China
| | - Yichun Liu
- Centre for Advanced Optoelectronic Functional Materials Research, and Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China
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18
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Yang Z, Guo C, Shi C, Wang DK, Zhang T, Zhu Q, Lu ZH. Improving Bias-Stress Stability of p-Type Organic Field-Effect Transistors by Constructing an Electron Injection Barrier at the Drain Electrode/Semiconductor Interfaces. ACS APPLIED MATERIALS & INTERFACES 2020; 12:41886-41895. [PMID: 32845606 DOI: 10.1021/acsami.0c12188] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Bias-stress instability has been a challenging problem and a roadblock for developing stable p-type organic field-effect transistors (OFETs). This device instability is hypothesized because of electron-correlated charge carrier trapping, neutralization, and recombination at semiconductor/dielectric interfaces and in semiconductor channels. Here, in this paper, a strategy is demonstrated to improve the bias-stress stability by constructing a multilayered drain electrode with energy-level modification layers (ELMLs). Several organic small molecules with high lowest unoccupied molecular orbital (LUMO) energy levels are experimented as ELMLs. The energy-level offset between the Fermi level of the drain electrode and the LUMOs of the ELMLs is shown to construct the interfacial barrier, which suppresses electron injection from the drain electrode into the channel, leading to significantly improved bias-stress stability of OFETs. The mechanism of the ELMLs on the bias-stress stability is studied by quantitative modeling analysis of charge carrier dynamics. Of all injection models evaluated, it is found that Fowler-Nordheim tunneling describes best the observed experimental data. Both theory and experimental data show that, by using the ELMLs with higher LUMO levels, the electron injection can be suppressed effectively, and the bias-stress stability of p-type OFETs can thereby be improved significantly.
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Affiliation(s)
- Zhenxin Yang
- Department of Physics, Yunnan University, Kunming 650091, China
| | - Chunhua Guo
- Department of Physics, Yunnan University, Kunming 650091, China
| | - Changsheng Shi
- Department of Physics, Yunnan University, Kunming 650091, China
| | - Deng-Ke Wang
- Department of Physics, Yunnan University, Kunming 650091, China
| | - Tao Zhang
- Department of Physics, Yunnan University, Kunming 650091, China
| | - Qiang Zhu
- Department of Physics, Yunnan University, Kunming 650091, China
| | - Zheng-Hong Lu
- Department of Materials Science and Engineering, University of Toronto, Toronto M5S 3E4, Canada
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Zhao Z, Yang H, Wei Z, Xue Y, Sun Y, Zhang W, Li P, Gong W, Zhuiykov S, Hu J. NH 3 Sensor Based on 3D Hierarchical Flower-Shaped n-ZnO/ p-NiO Heterostructures Yields Outstanding Sensing Capabilities at ppb Level. SENSORS 2020; 20:s20174754. [PMID: 32842675 PMCID: PMC7506851 DOI: 10.3390/s20174754] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/05/2020] [Revised: 08/17/2020] [Accepted: 08/20/2020] [Indexed: 11/16/2022]
Abstract
Hierarchical three-dimensional (3D) flower-like n-ZnO/p-NiO heterostructures with various ZnxNiy molar ratios (Zn5Ni1, Zn2Ni1, Zn1Ni1, Zn1Ni2 and Zn1Ni5) were synthesized by a facile hydrothermal method. Their crystal phase, surface morphology, elemental composition and chemical state were comprehensively investigated by XRD, SEM, EDS, TEM and XPS techniques. Gas sensing measurements were conducted on all the as-developed ZnxNiy-based sensors toward ammonia (NH3) detection under various working temperatures from 160 to 340 °C. In particular, the as-prepared Zn1Ni2 sensor exhibited superior NH3 sensing performance under optimum working temperature (280 °C) including high response (25 toward 100 ppm), fast response/recovery time (16 s/7 s), low detection limit (50 ppb), good selectivity and long-term stability. The enhanced NH3 sensing capabilities of Zn1Ni2 sensor could be attributed to both the specific hierarchical structure which facilitates the adsorption of NH3 molecules and produces much more contact sites, and the improved gas response characteristics of p-n heterojunctions. The obtained results clear demonstrated that the optimum n-ZnO/p-NiO heterostructure is indeed very promising sensing material toward NH3 detection for different applications.
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Affiliation(s)
- Zhenting Zhao
- Guangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University, Huizhou 516001, Guangdong, China; (Z.Z.); (W.G.)
- Center of Nano Energy and Devices, College of Information and computer, Taiyuan University of Technology, Taiyuan 030024, Shanxi, China; (H.Y.); (Y.X.); (Y.S.); (W.Z.); (P.L.)
| | - Haoyue Yang
- Center of Nano Energy and Devices, College of Information and computer, Taiyuan University of Technology, Taiyuan 030024, Shanxi, China; (H.Y.); (Y.X.); (Y.S.); (W.Z.); (P.L.)
| | - Zihan Wei
- Department of Solid State Science, Faculty of Science, Ghent University Global Campus, 119 Songdomunhwa-ro, Yeonsu-gu, Incheon 21985, Korea; (Z.W.); (S.Z.)
| | - Yan Xue
- Center of Nano Energy and Devices, College of Information and computer, Taiyuan University of Technology, Taiyuan 030024, Shanxi, China; (H.Y.); (Y.X.); (Y.S.); (W.Z.); (P.L.)
| | - Yongjiao Sun
- Center of Nano Energy and Devices, College of Information and computer, Taiyuan University of Technology, Taiyuan 030024, Shanxi, China; (H.Y.); (Y.X.); (Y.S.); (W.Z.); (P.L.)
| | - Wenlei Zhang
- Center of Nano Energy and Devices, College of Information and computer, Taiyuan University of Technology, Taiyuan 030024, Shanxi, China; (H.Y.); (Y.X.); (Y.S.); (W.Z.); (P.L.)
| | - Pengwei Li
- Center of Nano Energy and Devices, College of Information and computer, Taiyuan University of Technology, Taiyuan 030024, Shanxi, China; (H.Y.); (Y.X.); (Y.S.); (W.Z.); (P.L.)
| | - Weiping Gong
- Guangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University, Huizhou 516001, Guangdong, China; (Z.Z.); (W.G.)
| | - Serge Zhuiykov
- Department of Solid State Science, Faculty of Science, Ghent University Global Campus, 119 Songdomunhwa-ro, Yeonsu-gu, Incheon 21985, Korea; (Z.W.); (S.Z.)
| | - Jie Hu
- Center of Nano Energy and Devices, College of Information and computer, Taiyuan University of Technology, Taiyuan 030024, Shanxi, China; (H.Y.); (Y.X.); (Y.S.); (W.Z.); (P.L.)
- Correspondence:
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