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Checa M, Fuhr AS, Sun C, Vasudevan R, Ziatdinov M, Ivanov I, Yun SJ, Xiao K, Sehirlioglu A, Kim Y, Sharma P, Kelley KP, Domingo N, Jesse S, Collins L. High-speed mapping of surface charge dynamics using sparse scanning Kelvin probe force microscopy. Nat Commun 2023; 14:7196. [PMID: 37938577 PMCID: PMC10632481 DOI: 10.1038/s41467-023-42583-x] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/10/2023] [Accepted: 10/15/2023] [Indexed: 11/09/2023] Open
Abstract
Unraveling local dynamic charge processes is vital for progress in diverse fields, from microelectronics to energy storage. This relies on the ability to map charge carrier motion across multiple length- and timescales and understanding how these processes interact with the inherent material heterogeneities. Towards addressing this challenge, we introduce high-speed sparse scanning Kelvin probe force microscopy, which combines sparse scanning and image reconstruction. This approach is shown to enable sub-second imaging (>3 frames per second) of nanoscale charge dynamics, representing several orders of magnitude improvement over traditional Kelvin probe force microscopy imaging rates. Bridging this improved spatiotemporal resolution with macroscale device measurements, we successfully visualize electrochemically mediated diffusion of mobile surface ions on a LaAlO3/SrTiO3 planar device. Such processes are known to impact band-alignment and charge-transfer dynamics at these heterointerfaces. Furthermore, we monitor the diffusion of oxygen vacancies at the single grain level in polycrystalline TiO2. Through temperature-dependent measurements, we identify a charge diffusion activation energy of 0.18 eV, in good agreement with previously reported values and confirmed by DFT calculations. Together, these findings highlight the effectiveness and versatility of our method in understanding ionic charge carrier motion in microelectronics or nanoscale material systems.
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Affiliation(s)
- Marti Checa
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA.
| | - Addis S Fuhr
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Changhyo Sun
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Rama Vasudevan
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Maxim Ziatdinov
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
- Computational Sciences and Engineering Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37923, USA
| | - Ilia Ivanov
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Seok Joon Yun
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
- Department of Semiconductor, University of Ulsan, Ulsan, 44610, Korea
| | - Kai Xiao
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Alp Sehirlioglu
- Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH, 44106, USA
| | - Yunseok Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Pankaj Sharma
- College of Science and Engineering, Flinders University, Bedford Park, SA, 5042, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), UNSW Sydney, Sydney, NSW, 2052, Australia
| | - Kyle P Kelley
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Neus Domingo
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Stephen Jesse
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Liam Collins
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA.
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Deiana AM, Tran N, Agar J, Blott M, Di Guglielmo G, Duarte J, Harris P, Hauck S, Liu M, Neubauer MS, Ngadiuba J, Ogrenci-Memik S, Pierini M, Aarrestad T, Bähr S, Becker J, Berthold AS, Bonventre RJ, Müller Bravo TE, Diefenthaler M, Dong Z, Fritzsche N, Gholami A, Govorkova E, Guo D, Hazelwood KJ, Herwig C, Khan B, Kim S, Klijnsma T, Liu Y, Lo KH, Nguyen T, Pezzullo G, Rasoulinezhad S, Rivera RA, Scholberg K, Selig J, Sen S, Strukov D, Tang W, Thais S, Unger KL, Vilalta R, von Krosigk B, Wang S, Warburton TK. Applications and Techniques for Fast Machine Learning in Science. Front Big Data 2022; 5:787421. [PMID: 35496379 PMCID: PMC9041419 DOI: 10.3389/fdata.2022.787421] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/30/2021] [Accepted: 01/31/2020] [Indexed: 01/10/2023] Open
Abstract
In this community review report, we discuss applications and techniques for fast machine learning (ML) in science-the concept of integrating powerful ML methods into the real-time experimental data processing loop to accelerate scientific discovery. The material for the report builds on two workshops held by the Fast ML for Science community and covers three main areas: applications for fast ML across a number of scientific domains; techniques for training and implementing performant and resource-efficient ML algorithms; and computing architectures, platforms, and technologies for deploying these algorithms. We also present overlapping challenges across the multiple scientific domains where common solutions can be found. This community report is intended to give plenty of examples and inspiration for scientific discovery through integrated and accelerated ML solutions. This is followed by a high-level overview and organization of technical advances, including an abundance of pointers to source material, which can enable these breakthroughs.
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Affiliation(s)
| | - Nhan Tran
- Fermi National Accelerator Laboratory, Batavia, IL, United States
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL, United States
| | - Joshua Agar
- Department of Materials Science and Engineering, Lehigh University, Bethlehem, PA, United States
| | | | | | - Javier Duarte
- Department of Physics, University of California, San Diego, San Diego, CA, United States
| | - Philip Harris
- Massachusetts Institute of Technology, Cambridge, MA, United States
| | - Scott Hauck
- Department of Electrical and Computer Engineering, University of Washington, Seattle, WA, United States
| | - Mia Liu
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, United States
| | - Mark S. Neubauer
- Department of Physics, University of Illinois Urbana-Champaign, Champaign, IL, United States
| | | | - Seda Ogrenci-Memik
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL, United States
| | - Maurizio Pierini
- European Organization for Nuclear Research (CERN), Meyrin, Switzerland
| | - Thea Aarrestad
- European Organization for Nuclear Research (CERN), Meyrin, Switzerland
| | - Steffen Bähr
- Karlsruhe Institute of Technology, Karlsruhe, Germany
| | - Jürgen Becker
- Karlsruhe Institute of Technology, Karlsruhe, Germany
| | - Anne-Sophie Berthold
- Institute of Nuclear and Particle Physics, Technische Universität Dresden, Dresden, Germany
| | | | - Tomás E. Müller Bravo
- Department of Physics and Astronomy, University of Southampton, Southampton, United Kingdom
| | - Markus Diefenthaler
- Thomas Jefferson National Accelerator Facility, Newport News, VA, United States
| | - Zhen Dong
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, United States
| | - Nick Fritzsche
- Institute of Nuclear and Particle Physics, Technische Universität Dresden, Dresden, Germany
| | - Amir Gholami
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, United States
| | | | - Dongning Guo
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL, United States
| | | | - Christian Herwig
- Fermi National Accelerator Laboratory, Batavia, IL, United States
| | - Babar Khan
- Department of Computer Science, Technical University Darmstadt, Darmstadt, Germany
| | - Sehoon Kim
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, United States
| | - Thomas Klijnsma
- Fermi National Accelerator Laboratory, Batavia, IL, United States
| | - Yaling Liu
- Department of Bioengineering, Lehigh University, Bethlehem, PA, United States
| | - Kin Ho Lo
- Department of Physics, University of Florida, Gainesville, FL, United States
| | - Tri Nguyen
- Massachusetts Institute of Technology, Cambridge, MA, United States
| | | | | | - Ryan A. Rivera
- Fermi National Accelerator Laboratory, Batavia, IL, United States
| | - Kate Scholberg
- Department of Physics, Duke University, Durham, NC, United States
| | | | - Sougata Sen
- Birla Institute of Technology and Science, Pilani, India
| | - Dmitri Strukov
- Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, CA, United States
| | - William Tang
- Department of Physics, Princeton University, Princeton, NJ, United States
| | - Savannah Thais
- Department of Physics, Princeton University, Princeton, NJ, United States
| | | | - Ricardo Vilalta
- Department of Computer Science, University of Houston, Houston, TX, United States
| | - Belina von Krosigk
- Karlsruhe Institute of Technology, Karlsruhe, Germany
- Department of Physics, Universität Hamburg, Hamburg, Germany
| | - Shen Wang
- Department of Physics, University of Florida, Gainesville, FL, United States
| | - Thomas K. Warburton
- Department of Physics and Astronomy, Iowa State University, Ames, IA, United States
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Aubriet V, Courouble K, Bardagot O, Demadrille R, Borowik Ł, Grévin B. Hidden surface photovoltages revealed by pump probe KPFM. NANOTECHNOLOGY 2022; 33:225401. [PMID: 35168229 DOI: 10.1088/1361-6528/ac5542] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/19/2021] [Accepted: 02/15/2022] [Indexed: 06/14/2023]
Abstract
In this work, we use pump-probe Kelvin probe force microscopy (pp-KPFM) in combination with non-contact atomic force microscopy (nc-AFM) under ultrahigh vacuum, to investigate the nature of the light-induced surface potential dynamics in alumina-passivated crystalline silicon, and in an organic bulk heterojunction thin film based on the PTB7-PC71BM tandem. In both cases, we demonstrate that it is possible to identify and separate the contributions of two different kinds of photo-induced charge distributions that give rise to potential shifts with opposite polarities, each characterized by different dynamics. The data acquired on the passivated crystalline silicon are shown to be fully consistent with the band-bending at the silicon-oxide interface, and with electron trapping processes in acceptors states and in the passivation layer. The full sequence of events that follow the electron-hole generation can be observed on the pp-KPFM curves, i.e. the carriers spatial separation and hole accumulation in the space charge area, the electron trapping, the electron-hole recombination, and finally the electron trap-release. Two dimensional dynamical maps of the organic blend photo-response are obtained by recording the pump-probe KPFM curves in data cube mode, and by implementing a specific batch processing protocol. Sample areas displaying an extra positive SPV component characterized by decay time-constants of a few tens of microseconds are thus revealed, and are tentatively attributed to specific interfaces formed between a polymer-enriched skin layer and recessed acceptor aggregates. Decay time constant images of the negative SPV component confirm that the acceptor clusters act as electron-trapping centres. Whatever the photovoltaic technology, our results exemplify how some of the SPV components may remain completely hidden to conventional SPV imaging by KPFM, with possible consequences in terms of photo-response misinterpretation. This work furthermore highlights the need of implementing time-resolved techniques that can provide a quantitative measurement of the time-resolved potential.
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Affiliation(s)
| | | | - Olivier Bardagot
- Université Grenoble Alpes, CNRS, CEA, IRIG-SyMMES, F-38000 Grenoble, France
| | - Renaud Demadrille
- Université Grenoble Alpes, CNRS, CEA, IRIG-SyMMES, F-38000 Grenoble, France
| | - Łukasz Borowik
- Université Grenoble Alpes, CEA, LETI, F-38000 Grenoble, France
| | - Benjamin Grévin
- Université Grenoble Alpes, CNRS, CEA, IRIG-SyMMES, F-38000 Grenoble, France
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Taguchi T, Chiarella F, Barra M, Chianese F, Kubozono Y, Cassinese A. Balanced Ambipolar Charge Transport in Phenacene/Perylene Heterojunction-Based Organic Field-Effect Transistors. ACS APPLIED MATERIALS & INTERFACES 2021; 13:8631-8642. [PMID: 33583173 PMCID: PMC9289882 DOI: 10.1021/acsami.0c20140] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
Electronic devices relying on the combination of different conjugated organic materials are considerably appealing for their potential use in many applications such as photovoltaics, light emission, and digital/analog circuitry. In this study, the electrical response of field-effect transistors achieved through the evaporation of picene and PDIF-CN2 molecules, two well-known organic semiconductors with remarkable charge transport properties, was investigated. With the main goal to get a balanced ambipolar response, various device configurations bearing double-layer, triple-layer, and codeposited active channels were analyzed. The most suitable choices for the layer deposition processes, the related characteristic parameters, and the electrode position were identified to this purpose. In this way, ambipolar organic field-effect transistors exhibiting balanced mobility values exceeding 0.1 cm2 V-1 s-1 for both electrons and holes were obtained. These experimental results highlight also how the combination between picene and PDIF-CN2 layers allows tuning the threshold voltages of the p-type response. Scanning Kelvin probe microscopy (SKPM) images acquired on picene/PDIF-CN2 heterojunctions suggest the presence of an interface dipole between the two organic layers. This feature is related to the partial accumulation of space charge at the interface being enhanced when the electrons are depleted in the underlayer.
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Affiliation(s)
- Tomoya Taguchi
- Research
Institute for Interdisciplinary Science, Okayama University, Okayama 700-8530, Japan
| | - Fabio Chiarella
- CNR-SPIN, c/o Dip. di Fisica “Ettore
Pancini”, P.le Tecchio, 80, I-80125 Napoli, Italy
- Email
| | - Mario Barra
- CNR-SPIN, c/o Dip. di Fisica “Ettore
Pancini”, P.le Tecchio, 80, I-80125 Napoli, Italy
| | - Federico Chianese
- CNR-SPIN, c/o Dip. di Fisica “Ettore
Pancini”, P.le Tecchio, 80, I-80125 Napoli, Italy
- Dip.
di Fisica “Ettore Pancini”, Università “Federico II”, P.le Tecchio, 80, I-80125 Napoli, Italy
| | - Yoshihiro Kubozono
- Research
Institute for Interdisciplinary Science, Okayama University, Okayama 700-8530, Japan
| | - Antonio Cassinese
- CNR-SPIN, c/o Dip. di Fisica “Ettore
Pancini”, P.le Tecchio, 80, I-80125 Napoli, Italy
- Dip.
di Fisica “Ettore Pancini”, Università “Federico II”, P.le Tecchio, 80, I-80125 Napoli, Italy
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Peng S, Luo Z, Wang S, Liang J, Yuan C, Yuan Z, Hu J, He J, Li Q. Mapping the Space Charge at Nanoscale in Dielectric Polymer Nanocomposites. ACS APPLIED MATERIALS & INTERFACES 2020; 12:53425-53434. [PMID: 33174412 DOI: 10.1021/acsami.0c13669] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Heterogeneous dielectric materials such as dielectric polymer nanocomposites have attracted extensive attention because of their exceptional insulating and dielectric performance, which originates from the unique space charge dynamics associated with the various interfacial regions. However, the space charge distribution and transport in polymer nanocomposites remain elusive due to the lack of analytical methods that can precisely probe the charge profile at the nanoscale resolution. Although a few studies have explored the possibility of using scanning probe techniques for characterizing the local charge distribution, the interference from induced electrical polarization of the material has been unfortunately ignored, leading to inaccurate results. In this contribution, we report an open-loop Kelvin probe force microscopy (KPFM) method with nanoscale resolution for the direct detection of the space charge profile in dielectric polymer nanocomposites. Unlike the conventional studies where a vertical direct current (DC) voltage is applied on the sample through the probe to evoke the charge injection and transport in dielectric polymer nanocomposites, the present method is established based on a delicate electrode configuration where a lateral electric field is allowed to be applied on the sample during the KPFM test. This special testing configuration enables real-time charge injection and transport without inducing the electrical polarization of material along the vertical direction, which gives rise to clean mapping of space charges and reveals the interfacial charge trapping in polymer nanocomposites. This work provides a robust and reliable method for studying the sophisticated charge transport properties associated with the various interfacial regions in heterogeneous dielectric materials.
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Affiliation(s)
- Simin Peng
- State Key Laboratory of Power System, Department of Electrical Engineering, Tsinghua University, Beijing 100084, China
| | - Zhen Luo
- State Key Laboratory of Power System, Department of Electrical Engineering, Tsinghua University, Beijing 100084, China
| | - Shaojie Wang
- State Key Laboratory of Power System, Department of Electrical Engineering, Tsinghua University, Beijing 100084, China
| | - Jiajie Liang
- State Key Laboratory of Power System, Department of Electrical Engineering, Tsinghua University, Beijing 100084, China
| | - Chao Yuan
- State Key Laboratory of Power System, Department of Electrical Engineering, Tsinghua University, Beijing 100084, China
| | - Zhikang Yuan
- State Key Laboratory of Power System, Department of Electrical Engineering, Tsinghua University, Beijing 100084, China
| | - Jun Hu
- State Key Laboratory of Power System, Department of Electrical Engineering, Tsinghua University, Beijing 100084, China
| | - Jinliang He
- State Key Laboratory of Power System, Department of Electrical Engineering, Tsinghua University, Beijing 100084, China
| | - Qi Li
- State Key Laboratory of Power System, Department of Electrical Engineering, Tsinghua University, Beijing 100084, China
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