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Wu P, Li Y, Yang A, Tan X, Chu J, Zhang Y, Yan Y, Tang J, Yuan H, Zhang X, Xiao S. Advances in 2D Materials Based Gas Sensors for Industrial Machine Olfactory Applications. ACS Sens 2024; 9:2728-2776. [PMID: 38828988 DOI: 10.1021/acssensors.4c00431] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/05/2024]
Abstract
The escalating development and improvement of gas sensing ability in industrial equipment, or "machine olfactory", propels the evolution of gas sensors toward enhanced sensitivity, selectivity, stability, power efficiency, cost-effectiveness, and longevity. Two-dimensional (2D) materials, distinguished by their atomic-thin profile, expansive specific surface area, remarkable mechanical strength, and surface tunability, hold significant potential for addressing the intricate challenges in gas sensing. However, a comprehensive review of 2D materials-based gas sensors for specific industrial applications is absent. This review delves into the recent advances in this field and highlights the potential applications in industrial machine olfaction. The main content encompasses industrial scenario characteristics, fundamental classification, enhancement methods, underlying mechanisms, and diverse gas sensing applications. Additionally, the challenges associated with transitioning 2D material gas sensors from laboratory development to industrialization and commercialization are addressed, and future-looking viewpoints on the evolution of next-generation intelligent gas sensory systems in the industrial sector are prospected.
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Affiliation(s)
- Peng Wu
- State Key Laboratory of Power Grid Environmental Protection, School of Electrical Engineering and Automation, Wuhan University, Wuhan, Hubei 430072, China
| | - Yi Li
- State Key Laboratory of Power Grid Environmental Protection, School of Electrical Engineering and Automation, Wuhan University, Wuhan, Hubei 430072, China
| | - Aijun Yang
- State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong, No 28 XianNing West Road, Xi'an, Shanxi 710049, China
| | - Xiangyu Tan
- Electric Power Research Institute, Yunnan Power Grid Co., Ltd., Kunming, Yunnan 650217, China
| | - Jifeng Chu
- State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong, No 28 XianNing West Road, Xi'an, Shanxi 710049, China
| | - Yifan Zhang
- State Key Laboratory of Power Grid Environmental Protection, School of Electrical Engineering and Automation, Wuhan University, Wuhan, Hubei 430072, China
| | - Yongxu Yan
- State Key Laboratory of Power Grid Environmental Protection, School of Electrical Engineering and Automation, Wuhan University, Wuhan, Hubei 430072, China
| | - Ju Tang
- State Key Laboratory of Power Grid Environmental Protection, School of Electrical Engineering and Automation, Wuhan University, Wuhan, Hubei 430072, China
| | - Hongye Yuan
- State Key Laboratory for Mechanical Behavior of Materials, Shaanxi International Research Center for Soft Matter, School of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an, Shanxi 710049, China
| | - Xiaoxing Zhang
- Hubei Engineering Research Center for Safety Monitoring of New Energy and Power Grid Equipment, Hubei University of Technology, Wuhan, Hubei 430068, China
| | - Song Xiao
- State Key Laboratory of Power Grid Environmental Protection, School of Electrical Engineering and Automation, Wuhan University, Wuhan, Hubei 430072, China
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Shi M, Lv Y, Wu G, Cho J, Abid M, Hung KM, Coileáin CÓ, Chang CR, Wu HC. Band Alignment Transition and Enhanced Performance in Vertical SnS 2/MoS 2 van der Waals Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2024; 16:22622-22631. [PMID: 38625091 DOI: 10.1021/acsami.4c00781] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/17/2024]
Abstract
The strong light-matter interaction and naturally passivated surfaces of van der Waals materials make heterojunctions of such materials ideal candidates for high-performance photodetectors. In this study, we fabricated SnS2/MoS2 van der Waals heterojunctions and investigated their photoelectric properties. Using an applied gate voltage, we can effectively alter the band arrangement and achieve a transition in type II and type I junctions. It is found that the SnS2/MoS2 van der Waals heterostructures are type II heterojunctions when the gate voltage is above -25 V. Below this gate voltage, the heterojunctions become type I. Photoelectric measurements under various wavelengths of incident light reveal enhanced sensitivity in the ultraviolet region and a broadband sensing range from 400 to 800 nm. Moreover, due to the transition from type II to type I band alignment, the measured photocurrent saturates at a specific gate voltage, and this value depends crucially on the bias voltage and light wavelength, providing a potential avenue for designing compact spectrometers.
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Affiliation(s)
- Mingyu Shi
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Yanhui Lv
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Gang Wu
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Jiung Cho
- Western Seoul Center, Korea Basic Science Institute, Seoul 03579, Republic of Korea
- Department of Materials Science and Engineering, Hongik University, Sejong 30016, Republic of Korea
| | - Mohamed Abid
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Kuan-Ming Hung
- Department of Electronics Engineering, National Kaohsiung University of Science and Technology, Kaohsiung 807, Taiwan, ROC
| | - Cormac Ó Coileáin
- Institute of Physics, EIT 2, Faculty of Electrical Engineering and Information Technology, University of the Bundeswehr Munich, Neubiberg 85577, Germany
| | - Ching-Ray Chang
- Quantum Information Center, Chung Yuan Christian University, Taoyuan 32023, Taiwan, ROC
- Department of Physics, National Taiwan University, Taipei 106, Taiwan, ROC
| | - Han-Chun Wu
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
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Cao Z, Zhao Y, Wu G, Cho J, Abid M, Choi M, Ó Coileáin C, Hung KM, Chang CR, Wu HC. Enhanced NO 2 Sensitivity of Vertically Stacked van der Waals Heterostructure Gas Sensor and Its Remarkable Electric and Mechanical Tunability. ACS APPLIED MATERIALS & INTERFACES 2024; 16:9495-9505. [PMID: 38334441 DOI: 10.1021/acsami.3c17194] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/10/2024]
Abstract
Nanodevices based on van der Waals heterostructures have been predicted, and shown, to have unprecedented operational principles and functionalities that hold promise for highly sensitive and selective gas sensors with rapid response times and minimal power consumption. In this study, we fabricated gas sensors based on vertical MoS2/WS2 van der Waals heterostructures and investigated their gas sensing capabilities. Compared with individual MoS2 or WS2 gas sensors, the MoS2/WS2 van der Waals heterostructure gas sensors are shown to have enhanced sensitivity, faster response times, rapid recovery, and a notable selectivity, especially toward NO2. In combination with a theoretical model, we show that it is important to take into account created trapped states (flat bands) induced by the adsorption of gas molecules, which capture charges and alter the inherent built-in potential of van der Waals heterostructure gas sensors. Additionally, we note that the performance of these MoS2/WS2 heterostructure gas sensors could be further enhanced using electrical gating and mechanical strain. Our findings highlight the importance of understanding the effects of altered built-in potentials arising from gas molecule adsorption induced flat bands, thus offering a way to enhance the gas sensing performance of van der Waals heterostructure gas sensors.
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Affiliation(s)
- Ze Cao
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Yue Zhao
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Gang Wu
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Jiung Cho
- Western Seoul Center, Korea Basic Science Institute, Seoul 03579, Republic of Korea
- Department of Advanced Materials Engineering, Chung-Ang University, 4726, Seodong-daero, Daedeok-myeon, Anseong-si, Gyeonggi-do 17546, Republic of Korea
| | - Mohamed Abid
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Miri Choi
- Chuncheon Center, Korea Basic Science Institute, Chuncheon 24341, Republic of Korea
| | - Cormac Ó Coileáin
- Institute of Physics, Faculty of Electrical Engineering and Information Technology, University of the Bundeswehr Munich, Neubiberg 85577, Germany
| | - Kuan-Ming Hung
- Department of Electronics Engineering, National Kaohsiung University of Science and Technology, Kaohsiung 807, Taiwan, ROC
| | - Ching-Ray Chang
- Quantum information center, Chung Yuan Christian University, Taoyuan 32023, Taiwan, ROC
- Department of Physics, National Taiwan University, Taipei 106, Taiwan, ROC
| | - Han-Chun Wu
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
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4
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Zhao Y, Wu G, Hung KM, Cho J, Choi M, Ó Coileáin C, Duesberg GS, Ren XK, Chang CR, Wu HC. Field Effect Transistor Gas Sensors Based on Mechanically Exfoliated Van der Waals Materials. ACS APPLIED MATERIALS & INTERFACES 2023; 15:17335-17343. [PMID: 36972407 DOI: 10.1021/acsami.2c23086] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
The high surface-to-volume ratio and flatness of mechanically exfoliated van der Waals (vdW) layered materials make them an ideal platform to investigate the Langmuir absorption model. In this work, we fabricated field effect transistor gas sensors, based on a variety of mechanically exfoliated vdW materials, and investigated their electrical field-dependent gas sensing properties. The good agreement between the experimentally extracted intrinsic parameters, such as equilibrium constant and adsorption energy, and theoretically predicted values suggests validity of the Langmuir absorption model for vdW materials. Moreover, we show that the device sensing behavior depends crucially on the availability of carriers, and giant sensitivities and strong selectivity can be achieved at the sensitivity singularity. Finally, we demonstrate that such features provide a fingerprint for different gases to quickly detect and differentiate between low concentrations of mixed hazardous gases using sensor arrays.
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Affiliation(s)
- Yue Zhao
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Gang Wu
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Kuan-Ming Hung
- Department of Electronics Engineering, National Kaohsiung University of Science and Technology, Kaohsiung, Taiwan 807, ROC
| | - Jiung Cho
- Western Seoul Center, Korea Basic Science Institute, Seoul 03579, Republic of Korea
| | - Miri Choi
- Chuncheon Center, Korea Basic Science Institute, Chuncheon 24341, Republic of Korea
| | - Cormac Ó Coileáin
- Institute of Physics, Faculty of Electrical Engineering and Information Technology (EIT 2) and Center for Integrated Sensor Systems, University of the Bundeswehr Munich, Neubiberg 85577, Germany
| | - Georg S Duesberg
- Institute of Physics, Faculty of Electrical Engineering and Information Technology (EIT 2) and Center for Integrated Sensor Systems, University of the Bundeswehr Munich, Neubiberg 85577, Germany
| | - Xiang-Kui Ren
- School of Chemical Engineering and Technology, Tianjin University, Tianjin 300072, P. R. China
| | - Ching-Ray Chang
- Quantum Information Center, Chung Yuan Christian University, Taoyuan, Taiwan 32023, ROC
- Department of Physics, National Taiwan University, Taipei, Taiwan 106, ROC
| | - Han-Chun Wu
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
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5
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Paghi A, Mariani S, Barillaro G. 1D and 2D Field Effect Transistors in Gas Sensing: A Comprehensive Review. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2206100. [PMID: 36703509 DOI: 10.1002/smll.202206100] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/05/2022] [Revised: 12/04/2022] [Indexed: 06/18/2023]
Abstract
Rapid progress in the synthesis and fundamental understanding of 1D and 2D materials have solicited the incorporation of these nanomaterials into sensor architectures, especially field effect transistors (FETs), for the monitoring of gas and vapor in environmental, food quality, and healthcare applications. Yet, several challenges have remained unaddressed toward the fabrication of 1D and 2D FET gas sensors for real-field applications, which are related to properties, synthesis, and integration of 1D and 2D materials into the transistor architecture. This review paper encompasses the whole assortment of 1D-i.e., metal oxide semiconductors (MOXs), silicon nanowires (SiNWs), carbon nanotubes (CNTs)-and 2D-i.e., graphene, transition metal dichalcogenides (TMD), phosphorene-materials used in FET gas sensors, critically dissecting how the material synthesis, surface functionalization, and transistor fabrication impact on electrical versus sensing properties of these devices. Eventually, pros and cons of 1D and 2D FETs for gas and vapor sensing applications are discussed, pointing out weakness and highlighting future directions.
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Affiliation(s)
- Alessandro Paghi
- Dipartimento di Ingegneria dell'Informazione, via G. Caruso 16, Pisa, 56122, Italy
| | - Stefano Mariani
- Dipartimento di Ingegneria dell'Informazione, via G. Caruso 16, Pisa, 56122, Italy
| | - Giuseppe Barillaro
- Dipartimento di Ingegneria dell'Informazione, via G. Caruso 16, Pisa, 56122, Italy
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Saggu IS, Singh S, Chen K, Xuan Z, Swihart MT, Sharma S. Ultrasensitive Room-Temperature NO 2 Detection Using SnS 2/MWCNT Composites and Accelerated Recovery Kinetics by UV Activation. ACS Sens 2023; 8:243-253. [PMID: 36647806 DOI: 10.1021/acssensors.2c02104] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/18/2023]
Abstract
High performance with lower power consumption is one among the essential features of a sensing device. Minute traces of hazardous gases such as NO2 are difficult to detect. Tin disulfide (SnS2) nanosheets have emerged as a promising NO2 sensor. However, their poor room-temperature conductivity gives rise to inferior sensitivity and sluggish recovery rates, thereby hindering their applications. To mitigate this problem, we present a low-cost ultrasensitive NO2 gas sensor with tin disulfide/multiwalled carbon nanotube (SnS2/MWCNT) nanocomposites, prepared using a single-step hydrothermal method, as sensing elements. Relative to pure SnS2, the conductivity of nanocomposites improved significantly. The sensor displayed a decrease in resistance when exposed to NO2, an oxidizing gas, and exhibited p-type conduction, also confirmed in separate Mott-Schottky measurements. At a temperature of 20 °C, the sensor device has a relative response of about ≈5% (3%) for 25 ppb (1 ppb) of NO2 with complete recovery in air (10 min) and excellent recovery rates with UV activation (0.3 min). A theoretical lower limit of detection (LOD) of 7 ppt implies greater sensitivity than all previously reported SnS2-based gas sensors, to the best of our knowledge. The improved sensing characteristics were attributed to the formation of nano p-n heterojunctions, which enhances the charge transport and gives rise to faster response. The composite sensor also demonstrated good NO2 selectivity against a variety of oxidizing and reducing gases, as well as excellent stability and long-term durability. This work will provide a fresh perspective on SnS2-based composite materials for practical gas sensors.
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Affiliation(s)
- Imtej Singh Saggu
- Department of Physics, Guru Nanak Dev University, Amritsar, Punjab143005, India
| | - Sukhwinder Singh
- Department of Physics, Guru Nanak Dev University, Amritsar, Punjab143005, India
| | - Kaiwen Chen
- Department of Chemical and Biological Engineering, University at Buffalo (SUNY), Buffalo, New York14260, United States
| | - Zhengxi Xuan
- Department of Chemical and Biological Engineering, University at Buffalo (SUNY), Buffalo, New York14260, United States
| | - Mark T Swihart
- Department of Chemical and Biological Engineering, University at Buffalo (SUNY), Buffalo, New York14260, United States
| | - Sandeep Sharma
- Department of Physics, Guru Nanak Dev University, Amritsar, Punjab143005, India
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7
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Zhao Y, Cho J, Choi M, Ó Coileáin C, Arora S, Hung KM, Chang CR, Abid M, Wu HC. Light-Tunable Polarity and Erasable Physisorption-Induced Memory Effect in Vertically Stacked InSe/SnS 2 Self-Powered Photodetector. ACS NANO 2022; 16:17347-17355. [PMID: 36153977 DOI: 10.1021/acsnano.2c08177] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
van der Waals heterojunctions with tunable polarity are being actively explored for more Moore and more-than-Moore device applications, as they can greatly simplify circuit design. However, inadequate control over the multifunctional operational states is still a challenge in their development. Here, we show that a vertically stacked InSe/SnS2 van der Waals heterojunction exhibits type-II band alignment, and its polarity can be tuned by an external electric field and by the wavelength and intensity of an illuminated light source. Moreover, such SnS2/InSe diodes are self-powered broadband photodetectors with good performance. The self-powered performance can be further enhanced significantly with gas adsorption, and the device can be quickly restored to the state before gas injection using a gate voltage pulse. Our results suggest a way to achieve and design multiple functions in a single device with multifield coupling of light, electrical field, gas, or other external stimulants.
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Affiliation(s)
- Yue Zhao
- School of Physics, Beijing Institute of Technology, Beijing 100081, P.R. China
| | - Jiung Cho
- Western Seoul Center, Korea Basic Science Institute, Seoul 03579, Republic of Korea
| | - Miri Choi
- Chuncheon Center, Korea Basic Science Institute, Chuncheon 24341, Republic of Korea
| | - Cormac Ó Coileáin
- Institute of Physics, EIT 2, Faculty of Electrical Engineering and Information Technology, University of the Bundeswehr Munich, Neubiberg 85577, Germany
| | - Sunil Arora
- Centre for Nanoscience and Nanotechnology, Panjab University, Chandigarh 160014, India
| | - Kuan-Ming Hung
- Department of Electronics Engineering, National Kaohsiung University of Science and Technology, Kaohsiung 807, Taiwan, ROC
| | - Ching-Ray Chang
- Quantum information center, Chung Yuan Christian University, Taoyuan 32023, Taiwan, ROC
- Department of Physics, National Taiwan University, Taipei 106, Taiwan, ROC
| | - Mohamed Abid
- School of Physics, Beijing Institute of Technology, Beijing 100081, P.R. China
| | - Han-Chun Wu
- School of Physics, Beijing Institute of Technology, Beijing 100081, P.R. China
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8
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Huang L, Cai G, Zeng R, Yu Z, Tang D. Contactless Photoelectrochemical Biosensor Based on the Ultraviolet-Assisted Gas Sensing Interface of Three-Dimensional SnS 2 Nanosheets: From Mechanism Reveal to Practical Application. Anal Chem 2022; 94:9487-9495. [PMID: 35737647 DOI: 10.1021/acs.analchem.2c02010] [Citation(s) in RCA: 53] [Impact Index Per Article: 26.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
This work reports a contactless photoelectrochemical biosensor based on an ultraviolet-assisted gas sensor (UV-AGS) with a homemade three-dimensional (3D)-SnS2 nanosheet-functionalized interdigitated electrode. After rigorous examination, it was found that the gas responsiveness accelerated and the sensitivity increased using the UV irradiation strategy. The effects of the interlayer structure and the Schottky heterojunction on the gas-sensitive response of O2 and NH3 under UV irradiation were further investigated theoretically by 3D electrostatic field simulations and first-principles density functional theory to reveal the mechanism. Finally, a UV-AGS device was developed to quantify the blood ammonia bioassay in a small-volume whole blood sample by alkalizing blood to release gas-phase ammonia with a linear range of 25-5000 μM with a limit of detection (LOD) of 29.5 μM. The device also enables a rapid immunoassay of human cardiac troponin I (cTnI) with a linear range of 0.4-25.6 ng/mL and an LOD of 0.37 ng/mL using a urease-labeled antibody as the immune recognition molecule. Both analyses showed satisfying specificity and stability, suggesting that the device can be applied to practical assays and is of great potential to increase the value of gas-sensitive sensors in chemical biosensing.
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Affiliation(s)
- Lingting Huang
- Key Laboratory for Analytical Science of Food Safety and Biology (MOE & Fujian Province), Department of Chemistry, Fuzhou University, Fuzhou 350108, People's Republic of China
| | - Guoneng Cai
- Key Laboratory for Analytical Science of Food Safety and Biology (MOE & Fujian Province), Department of Chemistry, Fuzhou University, Fuzhou 350108, People's Republic of China
| | - Ruijin Zeng
- Key Laboratory for Analytical Science of Food Safety and Biology (MOE & Fujian Province), Department of Chemistry, Fuzhou University, Fuzhou 350108, People's Republic of China
| | - Zhichao Yu
- Key Laboratory for Analytical Science of Food Safety and Biology (MOE & Fujian Province), Department of Chemistry, Fuzhou University, Fuzhou 350108, People's Republic of China
| | - Dianping Tang
- Key Laboratory for Analytical Science of Food Safety and Biology (MOE & Fujian Province), Department of Chemistry, Fuzhou University, Fuzhou 350108, People's Republic of China
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9
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Dai C, Liu Y, Wei D. Two-Dimensional Field-Effect Transistor Sensors: The Road toward Commercialization. Chem Rev 2022; 122:10319-10392. [PMID: 35412802 DOI: 10.1021/acs.chemrev.1c00924] [Citation(s) in RCA: 57] [Impact Index Per Article: 28.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
The evolutionary success in information technology has been sustained by the rapid growth of sensor technology. Recently, advances in sensor technology have promoted the ambitious requirement to build intelligent systems that can be controlled by external stimuli along with independent operation, adaptivity, and low energy expenditure. Among various sensing techniques, field-effect transistors (FETs) with channels made of two-dimensional (2D) materials attract increasing attention for advantages such as label-free detection, fast response, easy operation, and capability of integration. With atomic thickness, 2D materials restrict the carrier flow within the material surface and expose it directly to the external environment, leading to efficient signal acquisition and conversion. This review summarizes the latest advances of 2D-materials-based FET (2D FET) sensors in a comprehensive manner that contains the material, operating principles, fabrication technologies, proof-of-concept applications, and prototypes. First, a brief description of the background and fundamentals is provided. The subsequent contents summarize physical, chemical, and biological 2D FET sensors and their applications. Then, we highlight the challenges of their commercialization and discuss corresponding solution techniques. The following section presents a systematic survey of recent progress in developing commercial prototypes. Lastly, we summarize the long-standing efforts and prospective future development of 2D FET-based sensing systems toward commercialization.
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Affiliation(s)
- Changhao Dai
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai 200433, China.,Laboratory of Molecular Materials and Devices, Fudan University, Shanghai 200433, China
| | - Yunqi Liu
- Laboratory of Molecular Materials and Devices, Fudan University, Shanghai 200433, China
| | - Dacheng Wei
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai 200433, China.,Laboratory of Molecular Materials and Devices, Fudan University, Shanghai 200433, China
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10
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Seo J, Nam SH, Lee M, Kim JY, Kim SG, Park C, Seo DW, Kim YL, Kim SS, Kim UJ, Hahm MG. Gate-controlled gas sensor utilizing 1D-2D hybrid nanowires network. iScience 2022; 25:103660. [PMID: 35024590 PMCID: PMC8733229 DOI: 10.1016/j.isci.2021.103660] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/24/2021] [Revised: 11/10/2021] [Accepted: 12/16/2021] [Indexed: 12/15/2022] Open
Abstract
Novel gas sensors that work at room temperature are attracting attention due to their low energy consumption and stability in the presence of toxic gases. However, the development of sensing characteristics at room temperature is still a primary challenge. Diverse reaction pathways and low adsorption energy for gas molecules are required to fabricate a gas sensor that works at room temperature with high sensitivity, selectivity, and efficiency. Therefore, we enhanced the gas sensing performance at room temperature by constructing hybridized nanostructure of 1D-2D hybrid of SnSe2 layers and SnO2 nanowire networks and by controlling the back-gate bias (Vg = 1.5 V). The response time was dramatically reduced by lowering the energy barrier for the adsorption on the reactive sites, which are controlled by the back gate. Consequently, we believe that this research could contribute to improving the performance of gas sensors that work at room temperature.
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Affiliation(s)
- Juyeon Seo
- Department of Materials Science and Engineering, Inha University, 100 Inha-ro, Michuhol-gu, Incheon 22212, Republic of Korea
| | - Seung Hyun Nam
- Department of Materials Science and Engineering, Inha University, 100 Inha-ro, Michuhol-gu, Incheon 22212, Republic of Korea
| | - Moonsang Lee
- Department of Materials Science and Engineering, Inha University, 100 Inha-ro, Michuhol-gu, Incheon 22212, Republic of Korea
| | - Jin-Young Kim
- Department of Materials Science and Engineering, Inha University, 100 Inha-ro, Michuhol-gu, Incheon 22212, Republic of Korea
| | - Seung Gyu Kim
- Department of Materials Science and Engineering, Inha University, 100 Inha-ro, Michuhol-gu, Incheon 22212, Republic of Korea
| | - Changkyoo Park
- Department of Laser and Electron Beam Technologies, Korea Institute of Machinery and Materials, Daejeon 34103, Republic of Korea
| | - Dong-Woo Seo
- Korea Institute of Civil Engineering and Building Technology, 283 Goyangdae-ro, Goyang-Si, Gyeonggi-Do 10223, Republic of Korea
| | - Young Lae Kim
- Department of Electronic Engineering, Gangneung-Wonju National University, Gangneung 25457, Republic of Korea
| | - Sang Sub Kim
- Department of Materials Science and Engineering, Inha University, 100 Inha-ro, Michuhol-gu, Incheon 22212, Republic of Korea
| | - Un Jeong Kim
- Advanced Sensor Laboratory, Samsung Advanced Institute of Technology, Suwon 443-803, Republic of Korea
| | - Myung Gwan Hahm
- Department of Materials Science and Engineering, Inha University, 100 Inha-ro, Michuhol-gu, Incheon 22212, Republic of Korea
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11
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Dong X, Han Q, Kang Y, Li H, Huang X, Fang Z, Yuan H, Elzatahry AA, Chi Z, Wu G, Xie W. Rational construction and triethylamine sensing performance of foam shaped α-MoO3@SnS2 nanosheets. CHINESE CHEM LETT 2022. [DOI: 10.1016/j.cclet.2021.06.022] [Citation(s) in RCA: 13] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/25/2022]
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12
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Barik P, Pradhan M. Selectivity in trace gas sensing: recent developments, challenges, and future perspectives. Analyst 2022; 147:1024-1054. [DOI: 10.1039/d1an02070f] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/30/2022]
Abstract
Selectivity is one of the most crucial figures of merit in trace gas sensing, and thus a comprehensive assessment is necessary to have a clear picture of sensitivity, selectivity, and their interrelations in terms of quantitative and qualitative views.
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Affiliation(s)
- Puspendu Barik
- Technical Research Centre, S. N. Bose National Centre for Basic Sciences, JD Block, Sector-III, Salt Lake City, Kolkata – 700106, India
| | - Manik Pradhan
- Technical Research Centre, S. N. Bose National Centre for Basic Sciences, JD Block, Sector-III, Salt Lake City, Kolkata – 700106, India
- Department of Chemical, Biological and Macromolecular Sciences, S. N. Bose National Centre for Basic Sciences, JD Block, Sector-III, Salt Lake City, Kolkata – 700106, India
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13
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You F, Hou X, Wei P, Qi J. SnS 2 with Flower-like Structure for Efficient CO 2 Photoreduction under Visible-Light Irradiation. Inorg Chem 2021; 60:18598-18602. [PMID: 34757727 DOI: 10.1021/acs.inorgchem.1c02804] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
Photocatalytic CO2 reduction using solar energy is a promising way to obtain renewable-energy sources for replacing fossil fuels. Through a hydrothermal process, we successfully designed and synthesized three-dimensional (3D) flower-like structured SnS2 with a sheet-like structured quasi-hexagon as the building block. The 3D hierarchical structure is conducive to light capture and absorption, the sheet structure can shorten the transmission path and promote separation of the carriers, and the self-supporting effect can effectively prevent catalyst agglomeration during the catalytic reaction. Therefore, when used in photocatalytic CO2 reduction, SnS2 with a flower-like structure showed excellent photocatalytic performance compared with SnS2 nanoparticles (NPs) under visible-light irradiation with a gas-solid reaction system.
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Affiliation(s)
- Feifei You
- College of Textile and Clothing, Yancheng Institute of Technology, Yancheng 224051, P.R. China.,State Key Laboratory of Biochemical Engineering, Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100190, P.R. China
| | - Xiaofan Hou
- Graduate School of Bio-Applications and Systems Engineering, Tokyo University of Agriculture and Technology, 2-24-16, Nakacho, Koganei, Tokyo 184-8588, Japan
| | - Peng Wei
- State Key Laboratory of Biochemical Engineering, Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100190, P.R. China
| | - Jian Qi
- State Key Laboratory of Biochemical Engineering, Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100190, P.R. China
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Zhao Y, Tsai TY, Wu G, Ó Coileáin C, Zhao YF, Zhang D, Hung KM, Chang CR, Wu YR, Wu HC. Graphene/SnS 2 van der Waals Photodetector with High Photoresponsivity and High Photodetectivity for Broadband 365-2240 nm Detection. ACS APPLIED MATERIALS & INTERFACES 2021; 13:47198-47207. [PMID: 34546715 DOI: 10.1021/acsami.1c11534] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The fabrication of graphene/SnS2 van der Waals photodetectors and their photoelectrical properties are systematically investigated. It was found that a dry transferred graphene/SnS2 van der Waals heterostructure had a broadband sensing range from ultraviolet (365 nm) to near-infrared (2.24 μm) and respective improved responsivities and photodetectivities of 7.7 × 103 A/W and 8.9 × 1013 jones at 470 nm and 2 A/W and 1.8 × 1010 jones at 1064 nm. Moreover, positive and negative photoconductance effects were observed when the photodetectors were illuminated by photon sources with energies greater and smaller than the bandgap of SnS2, respectively. The photoresponsivity (R) versus incident power density (P) follows the empirical law R ∝ Pinβ, with β > -1 for positive photoconductance effects and β < -1 for negative photoconductance effects. On the basis of the Fowler-Nordheim tunneling model and a Poisson and drift-diffusion simulation, we show quantitatively that the barrier height and barrier width of the heterostructure photodetector could be controlled by a laser and an external electrical field through a photogating effect generated by carriers trapped at the interface, which could be used to tune the separation and transport of photogenerated carriers. Our results may be useful for the design of high performance van der Waals heterojunction photodetectors.
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Affiliation(s)
- Yue Zhao
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Tsung-Yin Tsai
- Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Gang Wu
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Cormac Ó Coileáin
- Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN) and Advanced Materials and Bioengineering Research (AMBER), School Chemistry, Trinity College, Dublin, Ireland
| | - Yan-Feng Zhao
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Duan Zhang
- Elementary Educational College, Beijing key Laboratory for Nano-Photonics and Nano-Structure, Capital Normal University, Beijing 100048, P. R. China
| | - Kuan-Ming Hung
- Department of Electronics Engineering, National Kaohsiung University of Science and Technology, Kaohsiung 807, Taiwan
| | - Ching-Ray Chang
- Department of Physics, National Taiwan University, Taipei 106, Taiwan
| | - Yuh-Renn Wu
- Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Han-Chun Wu
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
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15
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Strategies for Improving the Sensing Performance of Semiconductor Gas Sensors for High-Performance Formaldehyde Detection: A Review. CHEMOSENSORS 2021. [DOI: 10.3390/chemosensors9070179] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/08/2023]
Abstract
Formaldehyde is a poisonous and harmful gas, which is ubiquitous in our daily life. Long-term exposure to formaldehyde harms human body functions; therefore, it is urgent to fabricate sensors for the real-time monitoring of formaldehyde concentrations. Metal oxide semiconductor (MOS) gas sensors is favored by researchers as a result of their low cost, simple operation and portability. In this paper, the mechanism of formaldehyde detection by gas sensors is introduced, and then the ways of ameliorating the response of gas sensors for formaldehyde detection in recent years are summarized. These methods include the control of the microstructure and morphology of sensing materials, the doping modification of matrix materials, the development of new semiconductor sensing materials, the outfield control strategy and the construction of the filter membrane. These five methods will provide a good prerequisite for the preparation of better performing formaldehyde gas sensors.
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Liu J, Zhang L, Cheng B, Fan J, Yu J. A high-response formaldehyde sensor based on fibrous Ag-ZnO/In 2O 3 with multi-level heterojunctions. JOURNAL OF HAZARDOUS MATERIALS 2021; 413:125352. [PMID: 33930945 DOI: 10.1016/j.jhazmat.2021.125352] [Citation(s) in RCA: 30] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/21/2020] [Revised: 01/19/2021] [Accepted: 02/05/2021] [Indexed: 05/14/2023]
Abstract
Timely detection of formaldehyde is pivotal because formaldehyde is slowly released from the indoor decorative materials, jeopardizing our healthy. Herein, a high-response formaldehyde gas sensor based on Ag-ZnO/In2O3 nanofibers was successfully fabricated. Compared with all the control samples, the hybrid exhibits superior sensitivity (0.65 ppm-1), excellent selectivity (≥ 12.5) and durable stability (the deviation value ≤ 3%). Particularly, an ultra-high response value of about 186 towards 100 ppm of formaldehyde at 260 °C was achieved, heading the list of outstanding candidates. Additionally, the limit of detection is as low as 9 ppb. The enhanced gas sensing properties can be mainly attributed to multi-level heterojunctions (n-n heterojunction and Ohmic junction) and the "spill-over" effect of Ag, ultimately increasing the adsorption of gas molecules on the surface of sensing material. This work verifies that proper design of multi-level heterojunctions significantly upgrade the sensing performance.
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Affiliation(s)
- Jingjing Liu
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, PR China; Foshan Xianhu Laboratory of the Advanced Energy Science and Technology Guangdong Laboratory, Xianhu Hydrogen Valley, Foshan 528200, PR China
| | - Liuyang Zhang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, PR China.
| | - Bei Cheng
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, PR China
| | - Jiajie Fan
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, PR China
| | - Jiaguo Yu
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, PR China; Foshan Xianhu Laboratory of the Advanced Energy Science and Technology Guangdong Laboratory, Xianhu Hydrogen Valley, Foshan 528200, PR China.
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17
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Zhao J, Huang X, Yin Y, Liao Y, Mo H, Qian Q, Guo Y, Chen X, Zhang Z, Hua M. Two-Dimensional Gallium Oxide Monolayer for Gas-Sensing Application. J Phys Chem Lett 2021; 12:5813-5820. [PMID: 34137612 DOI: 10.1021/acs.jpclett.1c01393] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
A two-dimensional (2D) Ga2O3 monolayer with an asymmetric quintuple-layer configuration was reported as a novel 2D material with excellent stability and strain tunability. This unusual asymmetrical structure opens up new possibilities for improving the selectivity and sensitivity of gas sensors by using selected surface orientations. In this study, the surface adsorptions of nine molecular gases, namely, O2, CO2, CO, SO2, NO2, H2S, NO, NH3, and H2O, on the 2D Ga2O3 monolayer are systematically investigated through first-principles calculations. The intrinsic dipole of the system leads to different adsorption energies and changes in the electronic structures between the top- and bottom-surface adsorptions. Analyses of electronic structures and charge transport calculations indicate a potential application of the 2D Ga2O3 monolayer as a room-temperature NO gas-sensing device with high sensitivity and tunable adsorption energy using plenary strain-induced lattice distortion.
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Affiliation(s)
- Junlei Zhao
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Xinran Huang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Yiheng Yin
- School of Electrical and Automation, Wuhan University, Wuhan, Hubei 430072, China
| | - Yikai Liao
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Haowen Mo
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Qingkai Qian
- Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Yuzheng Guo
- School of Electrical and Automation, Wuhan University, Wuhan, Hubei 430072, China
| | - Xiaolong Chen
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Zhaofu Zhang
- Department of Engineering, Cambridge University, Cambridge CB2 1PZ, United Kingdom
| | - Mengyuan Hua
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China
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Wang X, Wei M, Li X, Shao S, Ren Y, Xu W, Li M, Liu W, Liu X, Zhao J. Large-Area Flexible Printed Thin-Film Transistors with Semiconducting Single-Walled Carbon Nanotubes for NO 2 Sensors. ACS APPLIED MATERIALS & INTERFACES 2020; 12:51797-51807. [PMID: 33141551 DOI: 10.1021/acsami.0c13824] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Development of large-area, low-cost, low-voltage, low-power consumption, flexible high-performance printed carbon nanotube thin-film transistors (TFTs) is helpful to promote their future applications in sensors and biosensors, wearable electronics, and the Internet of things. In this work, low-voltage, flexible printed carbon nanotube TFTs with a large-area and low-cost fabrication process were successfully constructed using ultrathin (∼3.6 nm) AlOx thin films formed by plasma oxidation of aluminum as dielectrics and screen-printed silver electrodes as contact electrodes. The as-prepared bottom-gate/bottom-contact carbon nanotube TFTs exhibit a low leakage current (∼10-10 A), a high charge carrier mobility (up to 9.9 cm2 V-1 s-1), high on/off ratios (higher than 105), and small subthreshold swings (80-120 mV/dec) at low operation voltages (from -1.5 to 1 V). At the same time, printed carbon nanotube TFTs showed a high response (ΔR/R = 99.6%) to NO2 gas even at 16 ppm with a faster response and recovery speed (∼8 s, exposure to 0.5 ppm NO2), a lower detection limit (0.069 ppm NO2), and a low power consumption (0.86 μW, exposure to 16 ppm NO2) at a gate voltage of 0.2 V at room temperature. Moreover, the printed carbon nanotube devices exhibited excellent mechanical flexibility and bias stress stability after 12,000 bending cycles at a radius of 5 mm and a bias stress test for 7200 s at a gate voltage of ±1 V, which originated from the ultrathin and compact AlOx dielectric and the super adhesion force between screen-printed silver electrodes and polyethylene terephthalate substrates.
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Affiliation(s)
- Xin Wang
- School of Materials Science and Engineering, Zhengzhou University, No. 100 Science Avenue, Zhengzhou, Henan 450001, P. R. China
- Printable Electronics Research Centre, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
| | - Miaomiao Wei
- Printable Electronics Research Centre, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
| | - Xiaoqian Li
- School of Materials Science and Engineering, Zhengzhou University, No. 100 Science Avenue, Zhengzhou, Henan 450001, P. R. China
- Printable Electronics Research Centre, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
| | - Shuangshuang Shao
- Printable Electronics Research Centre, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
| | - Yunfei Ren
- Printable Electronics Research Centre, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
| | - Wenjing Xu
- Printable Electronics Research Centre, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
| | - Min Li
- Printable Electronics Research Centre, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
| | - Wentao Liu
- School of Materials Science and Engineering, Zhengzhou University, No. 100 Science Avenue, Zhengzhou, Henan 450001, P. R. China
| | - Xuying Liu
- School of Materials Science and Engineering, Zhengzhou University, No. 100 Science Avenue, Zhengzhou, Henan 450001, P. R. China
| | - Jianwen Zhao
- Printable Electronics Research Centre, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
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