Enhanced Kerr Nonlinearity and Nonlinear Figure of Merit in Silicon Nanowires Integrated with 2D Graphene Oxide Films

2D Graphene Oxide Films Expand Functionality of Photonic Chips

On-chip integration of 2D materials with unique structures and properties endow integrated devices with new functionalities and improved performance. With high flexibility in ways to modify its properties and compatibility with integrated platforms, graphene oxide (GO) is an exceptionally attractive 2D material for hybrid integrated photonic chips. Here, by harnessing unique property changes induced by photothermal effects in 2D GO films, novel functionalities beyond the capability of photonic integrated circuits are demonstrated. These include all-optical control and tuning, optical power limiting, and nonreciprocal light transmission. The 2D layered GO films are integrated onto photonic chips with precise control of their thickness and size. Benefitting from the broadband optical response of 2D GO films, all three functionalities feature a very wide operational optical bandwidth. By fitting the experimental results with theory, the changes in GO film properties induced by the photothermal effects are analyzed, revealing interesting insights about the physics of 2D GO films. These results highlight the versatility of 2D GO films in implementing new functions for integrated photonic devices for a wide range of applications.

Facile synthesis of yellow-green fluorescent silicon nanoparticles and their application in detection of nitrophenol isomers

A clear formation mechanism is essential for the controllable synthesis of nanomaterials with different optical properties, which is also one of the challenges facing the preparation of fluorescent silicon nanomaterials. In this work, a one-step room temperature synthesis method was established to prepare yellow-green fluorescent silicon nanoparticles (SiNPs). The obtained SiNPs exhibited excellent pH stability, salt tolerance, anti-photobleaching ability and biocompatibility. Based on X-ray photoelectron spectroscopy, transmission electron microscopy, ultra high performance liquid chromatography tandem mass spectrometry and other characterization data, the formation mechanism of the SiNPs was proposed, which provided a theoretical basis and important reference for the controllable preparation of SiNPs and other fluorescent nanomaterials. In addition, the obtained SiNPs illustrated excellent sensitivity for nitrophenol isomers, the linear range of o-nitrophenol, m-nitrophenol, p-nitrophenol was 0.05-600 μM, 20-600 μM and 0.01-600 μM under the λ_ex and λ_em were set as 440 nm and 549 nm, and related limit detection was 16.7 nM, 6.7 μM and 3.3 nM, respectively. The developed SiNP-based sensor achieved satisfactory recoveries in detecting nitrophenol isomers in a river water sample, showing great promise in practical applications.

Third-Order Optical Nonlinearities of 2D Materials at Telecommunications Wavelengths

All-optical signal processing based on nonlinear optical devices is promising for ultrafast information processing in optical communication systems. Recent advances in two-dimensional (2D) layered materials with unique structures and distinctive properties have opened up new avenues for nonlinear optics and the fabrication of related devices with high performance. This paper reviews the recent advances in research on third-order optical nonlinearities of 2D materials, focusing on all-optical processing applications in the optical telecommunications band near 1550 nm. First, we provide an overview of the material properties of different 2D materials. Next, we review different methods for characterizing the third-order optical nonlinearities of 2D materials, including the Z-scan technique, third-harmonic generation (THG) measurement, and hybrid device characterization, together with a summary of the measured n₂ values in the telecommunications band. Finally, the current challenges and future perspectives are discussed.

Graphene oxide for photonics, electronics and optoelectronics

Graphene oxide (GO) was initially developed to emulate graphene, but it was soon recognized as a functional material in its own right, addressing an application space that is not accessible to graphene and other carbon materials. Over the past decade, research on GO has made tremendous advances in material synthesis and property tailoring. These, in turn, have led to rapid progress in GO-based photonics, electronics and optoelectronics, paving the way for technological breakthroughs with exceptional performance. In this Review, we provide an overview of the optical, electrical and optoelectronic properties of GO and reduced GO on the basis of their chemical structures and fabrication approaches, together with their applications in key technologies such as solar energy harvesting, energy storage, medical diagnosis, image display and optical communications. We also discuss the challenges of this field, together with exciting opportunities for future technological advances.

Photo-Thermal Tuning of Graphene Oxide Coated Integrated Optical Waveguides

We experimentally investigate power-sensitive photo-thermal tuning (PTT) of two-dimensional (2D) graphene oxide (GO) films coated on integrated optical waveguides. We measure the light power thresholds for reversible and permanent GO reduction in silicon nitride (SiN) waveguides integrated with one and two layers of GO. For the device with one layer of GO, the power threshold for reversible and permanent GO reduction are ~20 and ~22 dBm, respectively. For the device with two layers of GO, the corresponding results are ~13 and ~18 dBm, respectively. Raman spectra at different positions of a hybrid waveguide with permanently reduced GO are characterized, verifying the inhomogeneous GO reduction along the direction of light propagation through the waveguide. The differences between the PTT induced by a continuous-wave laser and a pulsed laser are also compared, confirming that the PTT mainly depend on the average input power. These results reveal interesting features for 2D GO films coated on integrated optical waveguides, which are of fundamental importance for the control and engineering of GO’s properties in hybrid integrated photonic devices.

Broadband high-Q multimode silicon concentric racetrack resonators for widely tunable Raman lasers

Multimode silicon resonators with ultralow propagation losses for ultrahigh quality (Q) factors have been attracting attention recently. However, conventional multimode silicon resonators only have high Q factors at certain wavelengths because the Q factors are reduced at wavelengths where fundamental modes and higher-order modes are both near resonances. Here, by implementing a broadband pulley directional coupler and concentric racetracks, we present a broadband high-Q multimode silicon resonator with average loaded Q factors of 1.4 × 10⁶ over a wavelength range of 440 nm (1240–1680 nm). The mutual coupling between the two multimode racetracks can lead to two supermodes that mitigate the reduction in Q factors caused by the mode coupling of the higher-order modes. Based on the broadband high-Q multimode resonator, we experimentally demonstrated a broadly tunable Raman silicon laser with over 516 nm wavelength tuning range (1325–1841 nm), a threshold power of (0.4 ± 0.1) mW and a slope efficiency of (8.5 ± 1.5) % at 25 V reverse bias.

The authors demonstrate a new approach for multimode resonators to maintain high-quality-factor resonances across a broad wavelength range using the detuning between the symmetric and anti-symmetric supermodes in concentric racetrack resonators.

Enhanced Spectral Broadening of Femtosecond Optical Pulses in Silicon Nanowires Integrated with 2D Graphene Oxide Films

We experimentally demonstrate enhanced spectral broadening of femtosecond optical pulses after propagation through silicon-on-insulator (SOI) nanowire waveguides integrated with two-dimensional (2D) graphene oxide (GO) films. Owing to the strong mode overlap between the SOI nanowires and the GO films with a high Kerr nonlinearity, the self-phase modulation (SPM) process in the hybrid waveguides is significantly enhanced, resulting in greatly improved spectral broadening of the femtosecond optical pulses. A solution-based, transfer-free coating method is used to integrate GO films onto the SOI nanowires with precise control of the film thickness. Detailed SPM measurements using femtosecond optical pulses are carried out, achieving a broadening factor of up to ~4.3 for a device with 0.4-mm-long, 2 layers of GO. By fitting the experimental results with the theory, we obtain an improvement in the waveguide nonlinear parameter by a factor of ~3.5 and in the effective nonlinear figure of merit (FOM) by a factor of ~3.8, relative to the uncoated waveguide. Finally, we discuss the influence of GO film length on the spectral broadening and compare the nonlinear optical performance of different integrated waveguides coated with GO films. These results confirm the improved nonlinear optical performance of silicon devices integrated with 2D GO films.

Fabrication Technologies for the On-Chip Integration of 2D Materials

With compact footprint, low energy consumption, high scalability, and mass producibility, chip-scale integrated devices are an indispensable part of modern technological change and development. Recent advances in 2D layered materials with their unique structures and distinctive properties have motivated their on-chip integration, yielding a variety of functional devices with superior performance and new features. To realize integrated devices incorporating 2D materials, it requires a diverse range of device fabrication techniques, which are of fundamental importance to achieve good performance and high reproducibility. This paper reviews the state-of-art fabrication techniques for the on-chip integration of 2D materials. First, an overview of the material properties and on-chip applications of 2D materials is provided. Second, different approaches used for integrating 2D materials on chips are comprehensively reviewed, which are categorized into material synthesis, on-chip transfer, film patterning, and property tuning/modification. Third, the methods for integrating 2D van der Waals heterostructures are also discussed and summarized. Finally, the current challenges and future perspectives are highlighted.

Enhancing Si3N4 Waveguide Nonlinearity with Heterogeneous Integration of Few-Layer WS2

The heterogeneous integration of low-dimensional materials with photonic waveguides has spurred wide research interest. Here, we report on the experimental investigation and the numerical modeling of enhanced nonlinear pulse broadening in silicon nitride waveguides with the heterogeneous integration of few-layer WS2. After transferring a few-layer WS2 flake of ∼14.8 μm length, the pulse spectral broadening in a dispersion-engineered silicon nitride waveguide has been enhanced by ∼48.8% in bandwidth. Through numerical modeling, an effective nonlinear coefficient higher than 600 m-1 W-1 has been retrieved for the heterogeneous waveguide indicating an enhancement factor of larger than 300 with respect to the pristine waveguide at a wavelength of 800 nm. With further advances in two-dimensional material fabrication and integration techniques, on-chip heterostructures will offer another degree of freedom for waveguide engineering, enabling high-performance nonlinear optical devices, such as frequency combs and quantum light sources.

Graphene Oxide for Integrated Photonics and Flat Optics

With superior optical properties, high flexibility in engineering its material properties, and strong capability for large-scale on-chip integration, graphene oxide (GO) is an attractive solution for on-chip integration of 2D materials to implement functional integrated photonic devices capable of new features. Over the past decade, integrated GO photonics, representing an innovative merging of integrated photonic devices and thin GO films, has experienced significant development, leading to a surge in many applications covering almost every field of optical sciences such as photovoltaics, optical imaging, sensing, nonlinear optics, and light emitting. This paper reviews the recent advances in this emerging field, providing an overview of the optical properties of GO as well as methods for the on-chip integration of GO. The main achievements made in GO hybrid integrated photonic devices for diverse applications are summarized. The open challenges as well as the potential for future improvement are also discussed.