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Yu L, Mi M, Xiao H, Wang S, Sun Y, Lyu B, Bai L, Shen B, Liu M, Wang S, Wang Y. Intercalation-Induced Monolayer Behavior in Bulk NbSe 2. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 39418477 DOI: 10.1021/acsami.4c12617] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/19/2024]
Abstract
Superconductivity at the 2D limit is significant for advancing fundamental physics, leading to extensive research on monolayer two-dimensional materials. In particular, monolayer transition metal dichalcogenides such as NbSe2 exhibit Ising superconductivity due to broken in-plane inversion symmetry and strong spin-orbit coupling, which has garnered significant attention. In this letter, we adopted an organic cation intercalation technique to modulate the interlayer interaction of NbSe2 by expanding the interlayer distance, thereby making intercalated NbSe2 behave similarly to monolayer NbSe2. The interlayer distances of NbSe2 intercalated with THA+, CTA+, and TDA+ cations are almost double or triple that of pristine NbSe2. The superconducting transition temperature (Tc) of THA-NbSe2 is comparable to that of pristine NbSe2, while the charge density wave (CDW) transition temperature is higher. The Tc of intercalated NbSe2 decreases with a reduced hole concentration, and the enhanced CDW is ascribed to the dimensional reduction. Notably, the in-plane upper critical field of intercalated NbSe2 significantly exceeds the Pauli paramagnetic limit, which is similar to the Ising superconductivity observed in monolayer NbSe2. Our work demonstrates that the organic cations intercalated two-dimensional materials exhibit behavior similar to their monolayer counterparts, providing a convenient platform for exploring and modulating physical phenomena at the two-dimensional limit.
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Affiliation(s)
- Lixuan Yu
- School of Integrated Circuits, Shandong Technology Center of Nanodevices and Integration, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Mengjuan Mi
- School of Integrated Circuits, Shandong Technology Center of Nanodevices and Integration, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Han Xiao
- School of Integrated Circuits, Shandong Technology Center of Nanodevices and Integration, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Shilei Wang
- State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan 250100, China
| | - Yitong Sun
- School of Physics, Shandong University, Jinan 250100, China
| | - Bingbing Lyu
- School of Integrated Circuits, Shandong Technology Center of Nanodevices and Integration, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Lihui Bai
- School of Physics, Shandong University, Jinan 250100, China
| | - Bing Shen
- School of Physics, Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, Sun Yat-sen University, Guangzhou 510275, China
| | - Min Liu
- School of Integrated Circuits, Shandong Technology Center of Nanodevices and Integration, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Shanpeng Wang
- State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan 250100, China
| | - Yilin Wang
- School of Integrated Circuits, Shandong Technology Center of Nanodevices and Integration, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
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2
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Henríquez-Guerra E, Almonte L, Li H, Elvira D, Calvo MR, Castellanos-Gomez A. Modulation of the Superconducting Phase Transition in Multilayer 2H-NbSe 2 Induced by Uniform Biaxial Compressive Strain. NANO LETTERS 2024; 24:10504-10509. [PMID: 39075987 PMCID: PMC11363131 DOI: 10.1021/acs.nanolett.4c02421] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/23/2024] [Revised: 07/24/2024] [Accepted: 07/24/2024] [Indexed: 07/31/2024]
Abstract
Strain is a powerful tool for tuning the properties of two-dimensional materials. Here, we investigated the effects of large, uniform biaxial compressive strain on the superconducting phase transition of multilayered 2H-NbSe2 flakes. We observed a consistent decrease in the critical temperature of NbSe2 flakes induced by the large thermal compression of a polymeric substrate (>1.2%) at cryogenic temperatures. For thin flakes (∼10 nm thick), a strong modulation of the critical temperature up to 1.5 K is observed, which monotonically decreases with increasing flake thickness. The effects of biaxial compressive strain remain significant even for relatively thick samples up to 80 nm thick, indicating efficient transfer of strain not only from the substrate to the flakes but also across several van der Waals layers. This work demonstrates that compressive strain induced from substrate thermal deformation can effectively tune phase transitions at low temperatures in 2D materials.
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Affiliation(s)
- Eudomar Henríquez-Guerra
- Departamento
de Física Aplicada, Universidad de
Alicante, 03690 Alicante, Spain
- Instituto
Universitario de Materiales IUMA, Universidad
de Alicante, 03690 Alicante, Spain
- BCMaterials,
Basque Center for Materials, Applications and Nanostructures, 48940 Leioa, Spain
| | - Lisa Almonte
- Departamento
de Física Aplicada, Universidad de
Alicante, 03690 Alicante, Spain
- Instituto
Universitario de Materiales IUMA, Universidad
de Alicante, 03690 Alicante, Spain
- BCMaterials,
Basque Center for Materials, Applications and Nanostructures, 48940 Leioa, Spain
| | - Hao Li
- 2D
Foundry Group, Instituto de Ciencia de Materiales
de Madrid, Consejo Superior de Investigaciones Científicas, 28049 Madrid, Spain
| | - Daniel Elvira
- Departamento
de Física Aplicada, Universidad de
Alicante, 03690 Alicante, Spain
- Instituto
Universitario de Materiales IUMA, Universidad
de Alicante, 03690 Alicante, Spain
| | - M. Reyes Calvo
- Departamento
de Física Aplicada, Universidad de
Alicante, 03690 Alicante, Spain
- Instituto
Universitario de Materiales IUMA, Universidad
de Alicante, 03690 Alicante, Spain
- BCMaterials,
Basque Center for Materials, Applications and Nanostructures, 48940 Leioa, Spain
- IKERBASQUE,
Basque Foundation for Science, Plaza Euskadi 5, 48009 Bilbao, Spain
| | - Andres Castellanos-Gomez
- 2D
Foundry Group, Instituto de Ciencia de Materiales
de Madrid, Consejo Superior de Investigaciones Científicas, 28049 Madrid, Spain
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3
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Wang X, Wang H, Ma L, Zhang L, Yang Z, Dong D, Chen X, Li H, Guan Y, Zhang B, Chen Q, Shi L, Li H, Qin Z, Tu X, Zhang L, Jia X, Chen J, Kang L, Wu P. Topotactic fabrication of transition metal dichalcogenide superconducting nanocircuits. Nat Commun 2023; 14:4282. [PMID: 37463894 DOI: 10.1038/s41467-023-39997-y] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/13/2023] [Accepted: 07/07/2023] [Indexed: 07/20/2023] Open
Abstract
Superconducting nanocircuits, which are usually fabricated from superconductor films, are the core of superconducting electronic devices. While emerging transition-metal dichalcogenide superconductors (TMDSCs) with exotic properties show promise for exploiting new superconducting mechanisms and applications, their environmental instability leads to a substantial challenge for the nondestructive preparation of TMDSC nanocircuits. Here, we report a universal strategy to fabricate TMDSC nanopatterns via a topotactic conversion method using prepatterned metals as precursors. Typically, robust NbSe2 meandering nanowires can be controllably manufactured on a wafer scale, by which a superconducting nanowire circuit is principally demonstrated toward potential single photon detection. Moreover, versatile superconducting nanocircuits, e.g., periodical circle/triangle hole arrays and spiral nanowires, can be prepared with selected TMD materials (NbS2, TiSe2, or MoTe2). This work provides a generic approach for fabricating nondestructive TMDSC nanocircuits with precise control, which paves the way for the application of TMDSCs in future electronics.
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Affiliation(s)
- Xiaohan Wang
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Hao Wang
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China.
- Hefei National Laboratory, Hefei, 230088, China.
| | - Liang Ma
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Labao Zhang
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China.
- Hefei National Laboratory, Hefei, 230088, China.
| | - Zhuolin Yang
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Daxing Dong
- Department of Applied Physics, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China
| | - Xi Chen
- Department of Physics, Tsinghua University, Beijing, 100084, China
| | - Haochen Li
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Yanqiu Guan
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Biao Zhang
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Qi Chen
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Lili Shi
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Hui Li
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Zhi Qin
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Xuecou Tu
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Lijian Zhang
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Xiaoqing Jia
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
- Hefei National Laboratory, Hefei, 230088, China
| | - Jian Chen
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Lin Kang
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
- Hefei National Laboratory, Hefei, 230088, China
| | - Peiheng Wu
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China.
- Hefei National Laboratory, Hefei, 230088, China.
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4
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Sevik C, Bekaert J, Milošević MV. Superconductivity in functionalized niobium-carbide MXenes. NANOSCALE 2023; 15:8792-8799. [PMID: 37102593 DOI: 10.1039/d3nr00347g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/19/2023]
Abstract
We detail the effects of Cl and S functionalization on the superconducting properties of layered (bulk) and monolayer niobium carbide (Nb2C) MXene crystals, based on first-principles calculations combined with Eliashberg theory. For bulk layered Nb2CCl2, the calculated superconducting transition temperature (Tc) is in very good agreement with the recently measured value of 6 K. We show that Tc is enhanced to 10 K for monolayer Nb2CCl2, due to an increase in the density of states at the Fermi level, and the corresponding electron-phonon coupling. We further demonstrate feasible gate- and strain-induced enhancements of Tc for both bulk-layered and monolayer Nb2CCl2 crystals, resulting in Tc values of around 38 K. In the S-functionalized Nb2CCl2 crystals, our calculations reveal the importance of phonon softening in understanding their superconducting properties. Finally, we predict that Nb3C2S2 in bulk-layered and monolayer forms is also superconducting, with a Tc of around 28 K. Considering that Nb2C is not superconducting in pristine form, our findings promote functionalization as a pathway towards robust superconductivity in MXenes.
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Affiliation(s)
- Cem Sevik
- Department of Physics & NANOlab Center of Excellence, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium.
- Department of Mechanical Engineering, Faculty of Engineering, Eskisehir Technical University, 26555 Eskisehir, Turkey
| | - Jonas Bekaert
- Department of Physics & NANOlab Center of Excellence, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium.
| | - Milorad V Milošević
- Department of Physics & NANOlab Center of Excellence, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium.
- Instituto de Física, Universidade Federal de Mato Grosso, Cuiabá, Mato Grosso 78060-900, Brazil
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5
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Qi Y, Sadi MA, Hu D, Zheng M, Wu Z, Jiang Y, Chen YP. Recent Progress in Strain Engineering on Van der Waals 2D Materials: Tunable Electrical, Electrochemical, Magnetic, and Optical Properties. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2205714. [PMID: 35950446 DOI: 10.1002/adma.202205714] [Citation(s) in RCA: 24] [Impact Index Per Article: 24.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/22/2022] [Revised: 08/01/2022] [Indexed: 06/15/2023]
Abstract
Strain engineering is a promising way to tune the electrical, electrochemical, magnetic, and optical properties of 2D materials, with the potential to achieve high-performance 2D-material-based devices ultimately. This review discusses the experimental and theoretical results from recent advances in the strain engineering of 2D materials. Some novel methods to induce strain are summarized and then the tunable electrical and optical/optoelectronic properties of 2D materials via strain engineering are highlighted, including particularly the previously less-discussed strain tuning of superconducting, magnetic, and electrochemical properties. Also, future perspectives of strain engineering are given for its potential applications in functional devices. The state of the survey presents the ever-increasing advantages and popularity of strain engineering for tuning properties of 2D materials. Suggestions and insights for further research and applications in optical, electronic, and spintronic devices are provided.
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Affiliation(s)
- Yaping Qi
- Department of Engineering Science, Faculty of Innovation Engineering, Macau University of Science and Technology, Av. Wai Long, Macao SAR, China
| | - Mohammad A Sadi
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, 47907, USA
| | - Dan Hu
- Department of Engineering Science, Faculty of Innovation Engineering, Macau University of Science and Technology, Av. Wai Long, Macao SAR, China
| | - Ming Zheng
- School of Materials Science and Physics, China University of Mining and Technology, Xuzhou, 221116, China
| | - Zhenping Wu
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing, 100876, China
| | - Yucheng Jiang
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu, 215009, P. R. China
| | - Yong P Chen
- Department of Engineering Science, Faculty of Innovation Engineering, Macau University of Science and Technology, Av. Wai Long, Macao SAR, China
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, 47907, USA
- Department of Physics and Astronomy and Birck Nanotechnology Center and Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, IN, 47907, USA
- Institute of Physics and Astronomy and Villum Center for Hybrid Quantum Materials and Devices, Aarhus University, Aarhus-C, 8000, Denmark
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6
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Cho CW, Lyu J, An L, Han T, Lo KT, Ng CY, Hu J, Gao Y, Li G, Huang M, Wang N, Schmalian J, Lortz R. Nodal and Nematic Superconducting Phases in NbSe_{2} Monolayers from Competing Superconducting Channels. PHYSICAL REVIEW LETTERS 2022; 129:087002. [PMID: 36053703 DOI: 10.1103/physrevlett.129.087002] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/08/2022] [Accepted: 07/26/2022] [Indexed: 06/15/2023]
Abstract
Transition metal dichalcogenides like 2H-NbSe_{2} in their two-dimensional (2D) form exhibit Ising superconductivity with the quasiparticle spins being firmly pinned in the direction perpendicular to the basal plane. This enables them to withstand exceptionally high magnetic fields beyond the Pauli limit for superconductivity. Using field-angle-resolved magnetoresistance experiments for fields rotated in the basal plane we investigate the field-angle dependence of the upper critical field (H_{c2}), which directly reflects the symmetry of the superconducting order parameter. We observe a sixfold nodal symmetry superposed on a twofold symmetry. This agrees with theoretical predictions of a nodal topological superconducting phase near H_{c2}, together with a nematic superconducting state. We demonstrate that in NbSe_{2} such unconventional superconducting states can arise from the presence of several competing superconducting channels.
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Affiliation(s)
- Chang-Woo Cho
- Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
| | - Jian Lyu
- Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
- Department of Physics, Southern University of Science and Technology, 1088 Xueyuan Road, Nanshan District, 518000 Shenzhen, Guangdong Province, China
| | - Liheng An
- Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
| | - Tianyi Han
- Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
| | - Kwan To Lo
- Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
| | - Cheuk Yin Ng
- Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
| | - Jiaqi Hu
- Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
| | - Yuxiang Gao
- Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
| | - Gaomin Li
- Department of Physics, Southern University of Science and Technology, 1088 Xueyuan Road, Nanshan District, 518000 Shenzhen, Guangdong Province, China
| | - Mingyuan Huang
- Department of Physics, Southern University of Science and Technology, 1088 Xueyuan Road, Nanshan District, 518000 Shenzhen, Guangdong Province, China
| | - Ning Wang
- Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
| | - Jörg Schmalian
- Institute for Theory of Condensed Matter and Institute for Quantum Materials and Technologies, Karlsruhe Institute of Technology, 76131 Karlsruhe, Germany
| | - Rolf Lortz
- Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
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