Band-Edge Engineering To Eliminate Radiation-Induced Defect States in Perovskite Scintillators

Bright Innovations: Review of Next-Generation Advances in Scintillator Engineering

This review focuses on modern scintillators, the heart of ionizing radiation detection with applications in medical diagnostics, homeland security, research, and other areas. The conventional method to improve their characteristics, such as light output and timing properties, consists of improving in material composition and doping, etc., which are intrinsic to the material. On the contrary, we review recent advancements in cutting-edge approaches to shape scintillator characteristics via photonic and metamaterial engineering, which are extrinsic and introduce controlled inhomogeneity in the scintillator's surface or volume. The methods to be discussed include improved light out-coupling using photonic crystal (PhC) coating, dielectric architecture modification producing the Purcell effect, and meta-materials engineering based on energy sharing. These approaches help to break traditional bulk scintillators' limitations, e.g., to deal with poor light extraction efficiency from the material due to a typically large refractive index mismatch or improve timing performance compared to bulk materials. In the Outlook section, modern physical phenomena are discussed and suggested as the basis for the next generations of scintillation-based detectors and technology, followed by a brief discussion on cost-effective fabrication techniques that could be scalable.

Design of a SnO2/Zeolite Gas Sensor to Enhance Formaldehyde Sensing Properties: From the Strategy of the Band Gap-Tunable Zeolite

ZSM-5 zeolite is usually used in gas sensors as an auxiliary material to improve the gas-sensitive properties of other semiconductor materials, such as its molecular sieve properties and surface adsorption properties. Here, the gas-sensitive mechanism analysis of SnO2/zeolite gas sensors is studied for the first time based on the perspective of zeolite as a band gap-tunable semiconductor that was reported recently. The gas-sensing mechanism of the zeolite/semiconductor has been modeled based on the surface charge theory, and the work function of the ZSM-5 zeolite has been revealed for the first time. A heterostructure of Ag and ZSM-5 was designed and compounded to tune the band gap of the ZSM-5 zeolite by the ammonia pool effect method. The band gap width of the zeolite decreases from 4.51 to 3.61 eV. A series of characterization techniques were used to analyze the distribution and morphology of silver nanoparticles in zeolites and the variation of the ZSM-5 band gap. Then, SnO2/Ag@ZSM-5 sensors were fabricated, and the gas-sensing performances were measured. The gas-sensing results show that the SnO2/Ag@ZSM-5 sensor has an improved response to formaldehyde in particular compared to the SnO2 sensor. The response value of the SnO2/Ag@ZSM-5 sensor to 70 ppm formaldehyde reached 29.4, which is a 528% improvement compared to the SnO2 sensor. Additionally, the selectivity was greatly enhanced. This study provides a strategy for designing and developing higher-performance gas sensors.

Band Gap and Defect Engineering Enhanced Scintillation from Ce3+-Doped Nanoglass Containing Mixed-Type Fluoride Nanocrystals

Much can be learned from the research and development of scintillator crystals for improving the scintillation performance of glasses. Relying on the concept of "embedding crystalline order in glass", we have demonstrated that the scintillation properties of Ce3+-doped nanoglass composites (nano-GCs) can be optimized via the synergistic effects of Gd3+-sublattice sensitization and band-gap engineering. The nano-GCs host a large volume fraction of KYxGd1-xF4 mixed-type fluoride nanocrystals (NCs) and still retain reasonably good transparency at Ce3+-emitting wavelengths. The light yield of 3455 ± 20 ph/MeV is found, which is the largest value ever reported in fluoride NC-embedded nano-GCs. A comprehensive study is given on the highly selective doping of Ce3+ in the NCs and its positive effect on the scintillation properties. The favorable influence of the Y3+/Gd3+ mixing on the suppression of defects is accounted for by density functional theory and borne out experimentally. As a proof-of-concept, X-ray imaging with a good spatial resolution (7.9 lp/mm) is demonstrated by employing Ce3+-doped nano-GCs. The superior radiation hardness, repeatability, and thermal stability of the designed scintillators bode well for their long-term practical applications.

First-principles studies of defect behaviour in bismuth germanate

Intrinsic defects are known to greatly affect the structural and electronic properties of scintillators thereby impacting performance when these materials are in operation. In order to overcome this effect, an understanding of the defect process is required for the design of more stable materials. Here we employed density functional theory calculations and the PBE0 hybrid functional to study the structural, electronic,defect process and optical properties of [Formula: see text] (BGO), a well know material used as scintillator. We examined possible intrinsic defects and calculated their formation energy and their impact on the properties that affect the scintillation process. Furthermore, we investigated the effect and role of rare earth element (REE = Nd, Pr, Ce and Tm) doping on the properties of the BGO system. While the PBE functional underestimated the band gap, the PBE0 was found to adequately describe the electronic properties of the system. Out of all the defects types considered, it was found that [Formula: see text] antisite is the most favourable defect. Analysis of the effect of this defect on the electronic properties of BGO revealed an opening of ingap states within the valence band. This observation suggests that the [Formula: see text] could be a charge trapping defect in BGO. We found that the calculated dopant substitution formation energy increases with increase in the size of the dopant and it turns out that the formation of O vacancy is easier in doped systems irrespective of the size of the dopant. We analyzed the optical spectra and noted variations in different regions of the photon energy spectra.

Band Gap Engineering and Trap Depths of Intrinsic Point Defects in RAlO3 (R = Y, La, Gd, Yb, Lu) Perovskites

The possibility of band gap engineering (BGE) in RAlO₃ (R = Y, La, Gd, Yb, Lu) perovskites in the context of trap depths of intrinsic point defects was investigated comprehensively using experimental and theoretical approaches. The optical band gap of the materials, E _g, was determined via both the absorption measurements in the VUV spectral range and the spectra of recombination luminescence excitation by synchrotron radiation. The experimentally observed effect of E _g reduction from ∼8.5 to ∼5.5 eV in RAlO₃ perovskites with increasing R³⁺ ionic radius was confirmed by the DFT electronic structure calculations performed for RM^IIIO₃ crystals (R = Lu, Y, La; M^III = Al, Ga, In). The possibility of BGE was also proved by the analysis of thermally stimulated luminescence (TSL) measured above room temperature for the far-red emitting (Y/Gd/La)AlO₃:Mn⁴⁺ phosphors, which confirmed decreasing of the trap depths in the cation sequence Y → Gd → La. Calculations of the trap depths performed within the super cell approach for a number of intrinsic point defects and their complexes allowed recognizing specific trapping centers that can be responsible for the observed TSL. In particular, the electron traps of 1.33 and 1.43 eV (in YAlO₃) were considered to be formed by the energy level of oxygen vacancy (V_O) with different arrangement of neighboring Y_Al and V_Y, while shallower electron traps of 0.9-1.0 eV were related to the energy level of Y_Al antisite complexes with neighboring V_O or (V_O + V_Y). The effect of the lowering of electron trap depths in RAlO₃ was demonstrated for the V_O-related level of the (Y_Al + V_O + V_Y) complex defect for the particular case of La substituting Y.