Design and Fabrication of Silicon Nanowire-Based Biosensors with Integration of Critical Factors: Toward Ultrasensitive Specific Detection of Biomolecules

High-Performance Field-Effect Sensing of Ammonia Based on High-Density and Ultrathin Silicon Nanowire Channels

Ultrathin silicon nanowires (SiNWs), grown via a high-yield and low-cost catalytic approach, are ideal building blocks for the construction of highly sensitive field-effect transistor (FET) sensors. In this work, we demonstrate a high-density growth integration of an ultrathin SiNW array, with diameter down to DNW = 24 ± 3 nm and narrow NW-to-NW spacing of only 120 nm, fabricated via an in-plane solid-liquid-solid (IPSLS) approach. Junctionless bottom-gated SiNW FETs are successfully constructed, exhibiting a high on/off current ratio of >107 and a sharp subthreshold swing of 156 mV/dec These provide an excellent platform for realizing high-performance NH3 sensing at room temperature, with a high response of 96.9% at 25 ppm and 38.6% at 2.5 ppm, rapid response time of 7.9 s for 5% response (or 85.8 s for 50% response), and superior selectivity against common volatile organic compound gases in ambient environments. Finally, the field-effect sensing mechanism is attributed to the Schottky barrier modulation by the adsorbed NH3 molecules at the metal/SiNW interface, as confirmed through an epoxy-masked selective region comparative analysis. These results provide a solid basis for the ultrathin catalytic IPSLS-SiNWs to serve as advantageous one-dimensional (1D) channels for the scalable integration of various high-performance and flexible gas sensing applications.

Nanoscale-localized multiplexed biological activation of field effect transistors for biosensing applications

The rise in antibiotic-resistant pathogens, highly infectious viruses, and chronic diseases has prompted the search for rapid and versatile medical tests that can be performed by the patient. Field-effect transistor (FET)-based electronic biosensing platforms are particularly attractive due to their sensitivity, fast turn-around time, potential for parallel detection of multiple pathogens, and compatibility with semiconductor manufacturing. However, an unmet critical need is a scalable, site-selective multiplexed biofunctionalization method with nanoscale precision for immobilizing different types of pathogen-specific bioreceptors on individual FETs, preventing parallel detection of multiple targets. Here, we propose a paradigm shift in FET biofunctionalization using thermal scanning probe lithography (tSPL) with a thermochemically sensitive polymer. This polymer can be spin-coated on fully-fabricated FET chips, making this approach applicable to any FET sensor material and technology. Crucially, we demonstrate the spatially selective multiplexed functionalization capability of this method by immobilizing different types of bioreceptors at prescribed locations on a chip with sub-20 nm resolution, paving the way for massively parallel FET detection of multiple pathogens. Antibody- and aptamer-modified graphene FET sensors are then realized, achieving ultra-sensitive detection of a minimum measured concentrations of 3 aM of SARS-CoV-2 spike proteins and 10 human SARS-CoV-2 infectious live virus particles per ml, and selectivity against human influenza A (H1N1) live virus.

Nanowire-based biosensors for solving biomedical problems

The review considers modern achievements and prospects of using nanowire biosensors, principles of their operation, methods of fabrication, and the influence of the Debye effect, which plays a key role in improving the biosensor characteristics. Special attention is paid to the practical application of such biosensors for the detection of a variety of biomolecules, demonstrating their capabilities and potential in the detection of a wide range of biomarkers of various diseases. Nanowire biosensors also show excellent results in such areas as early disease diagnostics, patient health monitoring, and personalized medicine due to their high sensitivity and specificity. Taking into consideration their high efficiency and diverse applications, nanowire-based biosensors demonstrate significant promise for commercialization and widespread application in medicine and related fields, making them an important area for future research and development.

Single-Molecule Electrical Profiling of Peptides and Proteins

In recent decades, there has been a significant increase in the application of single-molecule electrical analysis platforms in studying proteins and peptides. These advanced analysis methods have the potential for deep investigation of enzymatic working mechanisms and accurate monitoring of dynamic changes in protein configurations, which are often challenging to achieve in ensemble measurements. In this work, the prominent research progress in peptide and protein-related studies are surveyed using electronic devices with single-molecule/single-event sensitivity, including single-molecule junctions, single-molecule field-effect transistors, and nanopores. In particular, the successful commercial application of nanopores in DNA sequencing has made it one of the most promising techniques in protein sequencing at the single-molecule level. From single peptides to protein complexes, the correlation between their electrical characteristics, structures, and biological functions is gradually being established. This enables to distinguish different molecular configurations of these biomacromolecules through real-time electrical monitoring of their life activities, significantly improving the understanding of the mechanisms underlying various life processes.

Nanobiosensors and their role in detection of adulterants and contaminants in food products

Nanotechnology is a multifaceted technical and scientific field undergoing a fast expansion. Nanoparticles, quantum dots, nanotubes, nanorods, nanowires, nanochips and many more are being increasingly used for fabrication of nanosensors and nanobiosensors to increase the sensitivity and selectivity of reactions. Food safety is an extremely important concern in food industries since it is directly associated with effect of food on human health. Here in our review, we have not only described the newest information regarding methods and use of nanomaterials for construction of nanosensors but also their detection range, limit of detection (LOD) and applications for food safety. Precise nanosensors having improved sensitivity and low limit of detection were discussed in brief. Review is primarily focused on nanosensors employed for detection of adulterants and contaminants in food products such as meat products, milk, fruit juices and water samples.

Solution-Induced Degradation of the Silicon Nanobelt Field-Effect Transistor Biosensors

Field-effect transistor (FET)-based biosensors are powerful analytical tools for detecting trace-specific biomolecules in diverse sample matrices, especially in the realms of pandemics and infectious diseases. The primary concern in applying these biosensors is their stability, a factor directly impacting the accuracy and reliability of sensing over extended durations. The risk of biosensor degradation is substantial, potentially jeopardizing the sensitivity and selectivity and leading to inaccurate readings, including the possibility of false positives or negatives. This paper delves into the documented degradation of silicon nanobelt FET (NBFET) biosensors induced by buffer solutions. The results highlight a positive correlation between immersion time and the threshold voltage of NBFET devices. Secondary ion mass spectrometry analysis demonstrates a gradual increase in sodium and potassium ion concentrations within the silicon as immersion days progress. This outcome is ascribed to the nanobelt's exposure to the buffer solution during the biosensing period, enabling ion penetration from the buffer into the silicon. This study emphasizes the critical need to address buffer-solution-induced degradation to ensure the long-term stability and performance of FET-based biosensors in practical applications.

Estimation of the Depletion Layer Thickness in Silicon Nanowire-Based Biosensors from Attomolar-Level Biomolecular Detection

Silicon nanowire (SiNW) biosensors have attracted a lot of attention due to their superior sensitivity. Recently, the dependence of biomolecule detection sensitivity on the nanowire (NW) width, number, and doping density has been partially investigated. However, the primary reason for achieving ultrahigh sensitivity has not been elucidated thus far. In this study, we designed and fabricated SiNW biosensors with different widths (10.8-155 nm) by integrating a complementary metal-oxide-semiconductor process and electron beam lithography. We aimed to investigate the detection limit of SiNW biosensors and reveal the critical effect of the 10-nm-scaled SiNW width on the detection sensitivity. The sensing performance was evaluated by detecting antiovalbumin immunoglobulin G (IgG) with various concentrations (from 6 aM to 600 nM). The initial thickness of the depletion region of the SiNW and the changes in the depletion region due to biomolecule binding were calculated. The basis of this calculation are the resistance change ratios as functions of IgG concentrations using SiNWs with different widths. The calculation results reveal that the proportion of the depletion region over the entire SiNW channel is the essential reason for high-sensitivity detection. Therefore, this study is crucial for an indepth understanding on how to maximize the sensitivity of SiNW biosensors.

Emerging Methods in Biosensing of Immunoglobin G-A Review

Human antibodies are produced due to the activation of immune system components upon exposure to an external agent or antigen. Human antibody G, or immunoglobin G (IgG), accounts for 75% of total serum antibody content. IgG controls several infections by eradicating disease-causing pathogens from the body through complementary interactions with toxins. Additionally, IgG is an important diagnostic tool for certain pathological conditions, such as autoimmune hepatitis, hepatitis B virus (HBV), chickenpox and MMR (measles, mumps, and rubella), and coronavirus-induced disease 19 (COVID-19). As an important biomarker, IgG has sparked interest in conducting research to produce robust, sensitive, selective, and economical biosensors for its detection. To date, researchers have used different strategies and explored various materials from macro- to nanoscale to be used in IgG biosensing. In this review, emerging biosensors for IgG detection have been reviewed along with their detection limits, especially electrochemical biosensors that, when coupled with nanomaterials, can help to achieve the characteristics of a reliable IgG biosensor. Furthermore, this review can assist scientists in developing strategies for future research not only for IgG biosensors but also for the development of other biosensing systems for diverse targets.

Nanostripe-Confined Catalyst Formation for Uniform Growth of Ultrathin Silicon Nanowires

Uniform growth of ultrathin silicon nanowire (SiNW) channels is the key to accomplishing reliable integration of various SiNW-based electronics, but remains a formidable challenge for catalytic synthesis, largely due to the lack of uniform size control of the leading metallic droplets. In this work, we explored a nanostripe-confined approach to produce highly uniform indium (In) catalyst droplets that enabled the uniform growth of an orderly SiNW array via an in-plane solid-liquid-solid (IPSLS) guided growth directed by simple step edges. It was found that the size dispersion of the In droplets could be reduced substantially from Dcatpl = 20 ± 96 nm on a planar surface to only Dcatns = 88 ± 13 nm when the width of the In nanostripe was narrowed to Wstr= 100 nm, which could be qualitatively explained in a confined diffusion and nucleation model. The improved droplet uniformity was then translated into a more uniform growth of ultrathin SiNWs, with diameter of only Dnw= 28 ± 4 nm, which has not been reported for single-edge guided IPSLS growth. These results lay a solid basis for the construction of advanced SiNW-derived field-effect transistors, sensors and display applications.

Opto Field-Effect Transistors for Detecting Quercetin-Cu2+ Complex

In this study, we explored the potential of applying biosensors based on silicon nanowire field-effect transistors (bio-NWFETs) as molecular absorption sensors. Using quercetin and Copper (Cu²⁺) ion as an example, we demonstrated the use of an opto-FET approach for the detection of molecular interactions. We found that photons with wavelengths of 450 nm were absorbed by the molecular complex, with the absorbance level depending on the Cu²⁺ concentration. Quantitative detection of the molecular absorption of metal complexes was performed for Cu²⁺ concentrations ranging between 0.1 μM and 100 μM, in which the photon response increased linearly with the copper concentration under optimized bias parameters. Our opto-FET approach showed an improved absorbance compared with that of a commercial ultraviolet-visible spectrophotometry.

Functional Devices from Bottom-Up Silicon Nanowires: A Review

This paper summarizes some of the essential aspects for the fabrication of functional devices from bottom-up silicon nanowires. In a first part, the different ways of exploiting nanowires in functional devices, from single nanowires to large assemblies of nanowires such as nanonets (two-dimensional arrays of randomly oriented nanowires), are briefly reviewed. Subsequently, the main properties of nanowires are discussed followed by those of nanonets that benefit from the large numbers of nanowires involved. After describing the main techniques used for the growth of nanowires, in the context of functional device fabrication, the different techniques used for nanowire manipulation are largely presented as they constitute one of the first fundamental steps that allows the nanowire positioning necessary to start the integration process. The advantages and disadvantages of each of these manipulation techniques are discussed. Then, the main families of nanowire-based transistors are presented; their most common integration routes and the electrical performance of the resulting devices are also presented and compared in order to highlight the relevance of these different geometries. Because they can be bottlenecks, the key technological elements necessary for the integration of silicon nanowires are detailed: the sintering technique, the importance of surface and interface engineering, and the key role of silicidation for good device performance. Finally the main application areas for these silicon nanowire devices are reviewed.

Nanosensors in clinical development of CAR-T cell immunotherapy

Immunotherapy using CAR-T cells is a new technological paradigm for cancer treatment. To avoid severe side effects and tumor escape variants observed for conventional CAR-T cells approach, adaptor CAR technologies are under development, where intermediate target modules redirect immune cells against cancer. In this work, silicon nanowire field-effect transistors are used to develop target modules for an optimized CAR-T cell operation. Focusing on a library of seven variants of E5B9 peptide that is used as CAR targeting epitope, we performed multiplexed binding tests using nanosensor chips. These peptides had been immobilized onto the sensor to compare the transistor signals upon titration with anti-La 5B9 antibodies. The correlation of binding affinities and sensor sensitivities enabled a selection of candidates for the interaction between CAR and target modules. An extremely low detection limit was observed for the sensor, down to femtomolar concentration, outperforming the current assay of the same purpose. Finally, the CAR T-cells redirection capability of selected peptides in target modules was proven successful in an in-vitro cytotoxicity assay. Our results open the perspective for the nanosensors to go beyond the early diagnostics in clinical cancer research towards developing and monitoring immunotherapeutic treatment, where the quantitative analysis with the standard techniques is limited.

Molecular Recognition by Silicon Nanowire Field-Effect Transistor and Single-Molecule Force Spectroscopy

Silicon nanowire (SiNW) field-effect transistors (FETs) have been developed as very sensitive and label-free biomolecular sensors. The detection principle operating in a SiNW biosensor is indirect. The biomolecules are detected by measuring the changes in the current through the transistor. Those changes are produced by the electrical field created by the biomolecule. Here, we have combined nanolithography, chemical functionalization, electrical measurements and molecular recognition methods to correlate the current measured by the SiNW transistor with the presence of specific molecular recognition events on the surface of the SiNW. Oxidation scanning probe lithography (o-SPL) was applied to fabricate sub-12 nm SiNW field-effect transistors. The devices were applied to detect very small concentrations of proteins (500 pM). Atomic force microscopy (AFM) single-molecule force spectroscopy (SMFS) experiments allowed the identification of the protein adsorption sites on the surface of the nanowire. We detected specific interactions between the biotin-functionalized AFM tip and individual avidin molecules adsorbed to the SiNW. The measurements confirmed that electrical current changes measured by the device were associated with the deposition of avidin molecules.