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Rossi M, van Schijndel TAJ, Lueb P, Badawy G, Jung J, Peeters WHJ, Kölling S, Moutanabbir O, Verheijen MA, Bakkers EPAM. Stemless InSb nanowire networks and nanoflakes grown on InP. NANOTECHNOLOGY 2024; 35:415602. [PMID: 38991513 DOI: 10.1088/1361-6528/ad61ef] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/25/2024] [Accepted: 07/11/2024] [Indexed: 07/13/2024]
Abstract
Among the experimental realization of fault-tolerant topological circuits are interconnecting nanowires with minimal disorder. Out-of-plane indium antimonide (InSb) nanowire networks formed by merging are potential candidates. Yet, their growth requires a foreign material stem usually made of InP-InAs. This stem imposes limitations, which include restricting the size of the nanowire network, inducing disorder through grain boundaries and impurity incorporation. Here, we omit the stem allowing for the growth of stemless InSb nanowire networks on an InP substrate. To enable the growth without the stem, we show that a preconditioning step using arsine (AsH3) is required before InSb growth. High-yield of stemless nanowire growth is achieved by patterning the substrate with a selective-area mask with nanohole cavities, containing restricted gold droplets from which nanowires originate. Interestingly, these nanowires are bent, posing challenges for the synthesis of interconnecting nanowire networks due to merging failure. We attribute this bending to the non-homogeneous incorporation of arsenic impurities in the InSb nanowires and the interposed lattice-mismatch. By tuning the growth parameters, we can mitigate the bending, yielding large and single crystalline InSb nanowire networks and nanoflakes. The improved size and crystal quality of these nanostructures broaden the potential of this technique for fabricating advanced quantum devices.
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Affiliation(s)
- Marco Rossi
- Applied Physics and Science Education Department, Eindhoven University of Technology, 5600 MB, Eindhoven, The Netherlands
| | - Teun A J van Schijndel
- Applied Physics and Science Education Department, Eindhoven University of Technology, 5600 MB, Eindhoven, The Netherlands
- Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA 93106, United States of America
| | - Pim Lueb
- Applied Physics and Science Education Department, Eindhoven University of Technology, 5600 MB, Eindhoven, The Netherlands
| | - Ghada Badawy
- Applied Physics and Science Education Department, Eindhoven University of Technology, 5600 MB, Eindhoven, The Netherlands
| | - Jason Jung
- Applied Physics and Science Education Department, Eindhoven University of Technology, 5600 MB, Eindhoven, The Netherlands
| | - Wouter H J Peeters
- Applied Physics and Science Education Department, Eindhoven University of Technology, 5600 MB, Eindhoven, The Netherlands
| | - Sebastian Kölling
- Department of Engineering Physics, École Polytechnique de Montréal, Montreal, Québec, Canada
| | - Oussama Moutanabbir
- Department of Engineering Physics, École Polytechnique de Montréal, Montreal, Québec, Canada
| | - Marcel A Verheijen
- Applied Physics and Science Education Department, Eindhoven University of Technology, 5600 MB, Eindhoven, The Netherlands
- Eurofins Materials Science Netherlands B.V., High Tech Campus 11, 5656 AE, Eindhoven, The Netherlands
| | - Erik P A M Bakkers
- Applied Physics and Science Education Department, Eindhoven University of Technology, 5600 MB, Eindhoven, The Netherlands
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Zhang L, Li X, Cheng S, Shan C. Microscopic Understanding of the Growth and Structural Evolution of Narrow Bandgap III-V Nanostructures. MATERIALS 2022; 15:ma15051917. [PMID: 35269147 PMCID: PMC8911728 DOI: 10.3390/ma15051917] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/29/2021] [Revised: 02/23/2022] [Accepted: 02/24/2022] [Indexed: 12/02/2022]
Abstract
III–V group nanomaterials with a narrow bandgap have been demonstrated to be promising building blocks in future electronic and optoelectronic devices. Thus, revealing the underlying structural evolutions under various external stimuli is quite necessary. To present a clear view about the structure–property relationship of III–V nanowires (NWs), this review mainly focuses on key procedures involved in the synthesis, fabrication, and application of III–V materials-based devices. We summarized the influence of synthesis methods on the nanostructures (NWs, nanodots and nanosheets) and presented the role of catalyst/droplet on their synthesis process through in situ techniques. To provide valuable guidance for device design, we further summarize the influence of structural parameters (phase, defects and orientation) on their electrical, optical, mechanical and electromechanical properties. Moreover, the dissolution and contact formation processes under heat, electric field and ionic water environments are further demonstrated at the atomic level for the evaluation of structural stability of III–V NWs. Finally, the promising applications of III–V materials in the energy-storage field are introduced.
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Affiliation(s)
| | - Xing Li
- Correspondence: (X.L.); (C.S.)
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Wen L, Pan D, Liu L, Tong S, Zhuo R, Zhao J. Large-Composition-Range Pure-Phase Homogeneous InAs 1-xSb x Nanowires. J Phys Chem Lett 2022; 13:598-605. [PMID: 35019661 DOI: 10.1021/acs.jpclett.1c04001] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Narrow bandgap InAs1-xSbx nanowires show broad prospects for applications in wide spectrum infrared detectors, high-performance transistors, and quantum computation. Realizing such applications requires a fine control of the composition and crystal structure of nanowires. However, the fabrication of large-composition-range pure-phase homogeneous InAs1-xSbx nanowires remains a huge challenge. Here, we first report the growth of large-composition-range stemless InAs1-xSbx nanowires (0 ≤ x ≤ 0.63) on Si (111) substrates by molecular beam epitaxy. We find that pure-phase InAs1-xSbx nanowires can be successfully obtained by controlling the antimony content x, nanowire diameter, and nanowire growth direction. Detailed energy dispersive spectrum data show that the antimony is uniformly distributed along the axial and radial directions of InAs1-xSbx nanowires and no spontaneous core-shell nanostructures form in the nanowires. On the basis of field-effect measurements, we confirm that InAs1-xSbx nanowires exhibit good conductivity and their mobilities can reach 4200 cm2 V-1 s-1 at 7 K. Our work lays the foundation for the development of InAs1-xSbx nanowire optoelectronic, electronic, and quantum devices.
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Affiliation(s)
- Lianjun Wen
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China
- College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Dong Pan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China
- College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Lei Liu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China
- College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Shucheng Tong
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China
| | - Ran Zhuo
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China
- College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jianhua Zhao
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China
- College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100049, China
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