Sub-Band Gap Absorption and Optical Nonlinear Response of MnPSe3 Nanosheets for Pulse Generation in the L-Band

Generation of a switchable and tunable rectangular pulse and multi-pulse with different peak powers at the L-band

A novel, to our knowledge, L-band erbium-doped fiber laser, utilizing a nonlinear optical loop mirror (NOLM) as a mode-locker, is presented in this study. Through precise adjustments of the polarization controllers (PCs), the laser achieves the generation of rectangular pulses with distinct single wavelengths, λ 1=1593n m and λ 2=1571n m, as well as dual-wavelength operation. The laser's operational mode can extend further to include harmonic mode-locking (HML). Furthermore, the investigation reveals the emergence of trapezoidal pulses and low-peak-power rectangular pulses within proximity of the conventional rectangular pulses. Notably, the evolutions of these low-peak-power pulses with the pump power also adhere to the peak power clamping (PPC) effect. Remarkably, the relative positioning of these pulses remains consistent across varying pump power levels or harmonic orders. Intriguingly, the evolution of the trapezoidal pulse with respect to pump power stands in stark contrast to that of the h-shaped pulse.

VTe2: Broadband Saturable Absorber for Passively Q-Switched Lasers in the Near- and Mid-Infrared Regions

In this study, we demonstrate the fabrication of a novel 2D transition metal dichalcogenide, VTe2, into a saturable absorber (SA) by using the liquid phase exfoliation method. Furthermore, the first-principles calculations were conducted to elucidate the electronic band structures and absorption spectrum. The nonlinear optical absorption properties of VTe2 at 1.0, 2.0, and 3.0 μm were measured using open-aperture Z-scan and P-scan methods, which showed saturation intensities and modulation depths of 95.57 GW/cm2 and 9.24%, 3.11 GW/cm2 and 7.26%, and 15.8 MW/cm2 and 17.1%, respectively. Furthermore, in the realm of practical implementation, the achievement of stable passively Q-switched (PQS) lasers employing SA composed of few-layered VTe2 nanosheets has manifested itself with broadband operating wavelengths from 1.0 to ∼3.0 μm. Specifically, PQS laser operations from near-infrared to mid-infrared with pulse durations of 195 and 563 ns for 1.0 and 2.0 μm solid-state lasers, respectively, and 749 ns for an Er3+-doped fluoride fiber laser at 3.0 μm were obtained. Our experimental results demonstrate that VTe2 is a potential broadband SA device for achieving PQS lasers. To the best of our knowledge, this is the first demonstration of using VTe2 as an SA in PQS lasers in the near- and mid-infrared regions, which highlights the potential of VTe2 for future research and applications in optoelectronic devices.

Co doping promotes the alkaline overall seawater electrolysis performance over MnPSe3 nanosheets

Herein, two-dimensional cobalt-doped MnPSe3 nanosheets (CMPS) were constructed, which served as an outstanding bifunctional catalyst for alkaline seawater splitting, i.e., offering the current density of 10 mA cm-2 with applied overpotentials of 59 and 300 mV for the hydrogen evolution reaction (HER) and oxygen evolution reaction (OER), respectively. The assembled two-electrode system of CMPS//CMPS also demonstrated excellent catalytic activity (10 mA cm-2, 1.59 V) and can remain stable for more than 100 h. Moreover, the theoretical calculations showed that CMPS features a suitable H* adsorption beneficial for the HER, as well as a lower free energy barrier favorable for the OER.

Nonlinear optical properties and photoexcited carrier dynamics of MnPS3 nanosheets

Here, we systematically report on the preparation of high-quality few-layered MnPS₃ nanosheets (NSs) by chemical vapor transport (CVT) and mechanical stripping method, and its carrier dynamics and third-order nonlinear optical properties were studied. Using the classical technique of open aperture Z-scan, a typical phenomenon of saturable absorption (SA) was observed at 475 nm, which indicates that the material is expected to be used as a saturable absorber in ultrafast lasers. The typical phenomenon of reverse saturation absorption (RSA) is observed at 800 and 1550 nm, which shows its potential in the field of broadband optical limiting. Compared with graphene, BP, MXene, MoS₂ and other typical two-dimensional materials, MnPS₃ NSs has a higher modulation depth. Using the non-degenerate transient absorption spectroscopy technology at room temperature, a slower cooling process of thermal carrier of MnPS₃ was observed. Moreover, the carrier lifetime can be tuned according to the wavelength. This work is of great significance to the improvement of MnPS₃ based devices, and lays a foundation for the application of MnPS₃ in short-wavelength photovoltaic cell, photoelectric detection and other fields.

Observation of Topological Flat Bands in the Kagome Semiconductor Nb3Cl8

The destructive interference of wavefunctions in a kagome lattice can give rise to topological flat bands (TFBs) with a highly degenerate state of electrons. Recently, TFBs have been observed in several kagome metals, including Fe₃Sn₂, FeSn, CoSn, and YMn₆Sn₆. Nonetheless, kagome materials that are both exfoliable and semiconducting are lacking, which seriously hinders their device applications. Herein, we show that Nb₃Cl₈, which hosts a breathing kagome lattice, is gapped out because of the absence of inversion symmetry, while the TFBs survive because of the protection of the mirror reflection symmetry. By angle-resolved photoemission spectroscopy measurements and first-principles calculations, we directly observe the TFBs and a moderate band gap in Nb₃Cl₈. By mechanical exfoliation, we successfully obtain monolayer Nb₃Cl₈, which is stable under ambient conditions. In addition, our calculations show that monolayer Nb₃Cl₈ has a magnetic ground state, thus providing opportunities to study the interplay among geometry, topology, and magnetism.

Controllable Synthesis of Narrow-Gap van der Waals Semiconductor Nb2GeTe4 with Asymmetric Architecture for Ultrafast Photonics

Ultrafast photonics has become an interdisciplinary topic of great consequence due to the spectacular progress of compact and efficient ultrafast pulse generation. Wide spectrum bandwidth is the key element for ultrafast pulse generation due to the Fourier transform limitation. Herein, monoclinic Nb₂GeTe₄, an emerging class of ternary narrow-gap semiconductors, was used as a real saturable absorber (SA), which manifests superior wide-range optical absorption. The crystallization form and growth mechanism of Nb₂GeTe₄ were revealed by a thermodynamic phase diagram. Furthermore, the Nb₂GeTe₄-SA showed reliable saturation intensity and larger modulation depth, ascribed to a built-in electric field driven by the asymmetric crystal architecture confirmed via X-ray diffraction, polarized Raman spectra, and scanning transmission electron microscopy. Based on the Nb₂GeTe₄-SA, femtosecond mode-locked operation with good overall performance was achieved by a properly designed ring cavity. These results suggest that Nb₂GeTe₄ shows great promise for ultrafast photonic applications and arouse interests in exploring the intriguing properties of the ternary van der Waals material family.

Synthesis of Hexagonal Structured GaS Nanosheets for Robust Femtosecond Pulse Generation

Gallium sulfide (GaS), with a hexagonal structure, has received extensive attention due to its graphene-like structure and derived optical properties. Here, high-quality GaS was obtained via chemical vapor synthesis and then prepared as a saturable absorber by the stamp-assisted localization-transfer technique onto fiber end face. The stability of the material and the laser damage threshold are maintained due to the optimized thickness and the cavity integration form. The potential of the GaS for nonlinear optics is explored by constructing a GaS-based Erbium-doped mode-locked fiber laser. Stable femtosecond (~448 fs) mode-locking operation of the single pulse train is achieved, and the robust mode-locked operation (>30 days) was recorded. Experimental results show the potential of GaS for multi-functional ultrafast high-power lasers and promote continuous research on graphene-like materials in nonlinear optics and photonics.

Femtosecond ultrafast pulse generation with high-quality 2H-TaS2 nanosheets via top-down empirical approach

Tantalum disulfide (TaS₂), an emerging group VB transition metal dichalcogenide, with unique layered structure, rich phase diagrams, metallic behavior, higher carrier concentration and mobility is emerging as a prototype for revealing basic physical phenomena and developing practical applications. However, its photonics properties and even engineering-related processes are still rare. Here, the top-down experiment demonstration, including synthesis, thickness optimization and nonlinear optical application, has been reported. In addition, the ultrafast (∼373 fs) erbium-doped fiber pulse with a small time-bandwidth product (∼0.34) and long-term stability (∼25 days) was realized using the nonlinear absorption properties of the high-quality 2H-TaS₂ nanosheet. These results suggest an experimental route for further ultrafast photonics exploration based on metallic transition metal dichalcogenides.

Black phosphorus for near-infrared ultrafast lasers in the spatial/temporal domain

Two-dimensional (2D) materials have attracted extensive interests due to their wide range of electronic and optical properties. After continuous and extensive research, black phosphorus (BP), a novel member of 2D layered semiconductor material, benefit for the unique in-plane anisotropic structure, controllable direct bandgap characteristic, and high charge carrier mobility, has attracted tremendous attention and successfully applied in ultrafast pulse generation. This article, which focuses on near-infrared ultrafast laser demonstration of BP, present discussion of preparation methods for high quality BP nanosheet, various BP based ultrafast lasers in the spatial/temporal domain, and the future research needs.