Utilizing the Diffusion of Fluorinated Polymers to Modify the Semiconductor/Dielectric Interface in Solution-Processed Conjugated Polymer Field-Effect Transistors

Arylazopyrazole-modulated stable dual-mode phototransistors

High-performance organic devices with dynamic and stable modulation are essential for building devices adaptable to the environment. However, the existing reported devices incorporating light-activated units exhibit either limited device stability or subpar optoelectronic properties. Here, we synthesize a new optically tunable polymer dielectric functionalized with photochromic arylazopyrazole units with a cis-isomer half-life of as long as 90 days. On this basis, stable dual-mode organic transistors that can be reversibly modulated are successfully fabricated. The trans-state devices exhibit high carrier mobility reaching 7.4 square centimeters per volt per second and excellent optical figures of merit, whereas the cis-state devices demonstrate stable but starkly different optoelectronic performance. Furthermore, optical image sensors are prepared with regulatable nonvolatile memories from 36 hours (cis state) to 108 hours (trans state). The achievement of dynamic light modulation shows remarkable prospects for the intelligent application of organic optoelectronic devices.

Mitigating substrate effects of van der Waals semiconductors using perfluoropolyether self-assembled monolayers

The properties of transition metal dichalcogenides (TMDCs) are critically dependent on the dielectric constant of substrates, which significantly limits their application. To address this issue, we used a perfluorinated polyether (PFPE) self-assembled monolayer (SAM) with low surface energy to increase the van der Waals (vdW) gap between TMDCs and the substrate, thereby reducing the interaction between them. This resulted in a reduction in the subthreshold swing value, an increase in the photoluminescence intensity of excitons, and a decrease in the doping effect by the substrate. This work will provide a new way to control the TMDC/dielectric interface and contribute to expanding the applicability of TMDCs.

2D Materials in Flexible Electronics: Recent Advances and Future Prospectives

Flexible electronics have recently gained considerable attention due to their potential to provide new and innovative solutions to a wide range of challenges in various electronic fields. These electronics require specific material properties and performance because they need to be integrated into a variety of surfaces or folded and rolled for newly formatted electronics. Two-dimensional (2D) materials have emerged as promising candidates for flexible electronics due to their unique mechanical, electrical, and optical properties, as well as their compatibility with other materials, enabling the creation of various flexible electronic devices. This article provides a comprehensive review of the progress made in developing flexible electronic devices using 2D materials. In addition, it highlights the key aspects of materials, scalable material production, and device fabrication processes for flexible applications, along with important examples of demonstrations that achieved breakthroughs in various flexible and wearable electronic applications. Finally, we discuss the opportunities, current challenges, potential solutions, and future investigative directions about this field.

Side-Chain-Assisted Transition of Conjugated Polymers from a Semiconductor to Conductor and Comparison of Their NO2 Sensing Characteristics

To investigate the effect of a side chain on the electrical properties of a conjugated polymer (CP), we designed two different CPs containing alkyl and ethylene glycol (EG) derivatives as side chains on the same conjugated backbone with an electron donor-acceptor (D-A) type chain configuration. PTQ-T with an alkyl side chain showed typical p-type semiconducting properties, whereas PTQ-TEG with an EG-based side chain exhibited electrically conductive behavior. Both CPs generated radical species owing to their strong D-A type conjugated structure; however, the spin density was much greater in PTQ-TEG. X-ray photoelectron spectroscopy analysis revealed that the O atoms of the EG-based side chains in PTQ-TEG were intercalated with the conjugated backbone and increased the carrier density. Upon application to a field-effect transistor sensor for PTQ-T and resistive sensor for PTQ-TEG, PTQ-TEG exhibited a better NO₂ detection capability with faster signal recovery characteristics than PTQ-T. Compared with the relatively rigid alkyl side chains of PTQ-T, the flexible EG-based side chains in PTQ-TEG have a higher potential to enlarge the free volume as well as improve NO₂-affinity, which promotes the diffusion of NO₂ in and out of the PTQ-TEG film, and ultimately resulting in better NO₂ detection capabilities.

Combination of Polymer Gate Dielectric and Two-Dimensional Semiconductor for Emerging Field-Effect Transistors

Two-dimensional (2D) materials are considered attractive semiconducting layers for emerging field-effect transistors owing to their unique electronic and optoelectronic properties. Polymers have been utilized in combination with 2D semiconductors as gate dielectric layers in field-effect transistors (FETs). Despite their distinctive advantages, the applicability of polymer gate dielectric materials for 2D semiconductor FETs has rarely been discussed in a comprehensive manner. Therefore, this paper reviews recent progress relating to 2D semiconductor FETs based on a wide range of polymeric gate dielectric materials, including (1) solution-based polymer dielectrics, (2) vacuum-deposited polymer dielectrics, (3) ferroelectric polymers, and (4) ion gels. Exploiting appropriate materials and corresponding processes, polymer gate dielectrics have enhanced the performance of 2D semiconductor FETs and enabled the development of versatile device structures in energy-efficient ways. Furthermore, FET-based functional electronic devices, such as flash memory devices, photodetectors, ferroelectric memory devices, and flexible electronics, are highlighted in this review. This paper also outlines challenges and opportunities in order to help develop high-performance FETs based on 2D semiconductors and polymer gate dielectrics and realize their practical applications.

Surface Polarization Doping in Diketopyrrolopyrrole-Based Conjugated Copolymers Using Cross-Linkable Terpolymer Dielectric Layers Containing Fluorinated Functional Units

It is essential to tune the electrical properties of inorganic semiconductors via a doping process in the fabrication of cutting-edge electronic devices; however, the doping in organic field-effect transistors (OFETs) is limited by the uncontrollable dopant diffusion and low doping efficiencies. This study proposes the use of a fluorinated functional group in a polymer dielectric layer as an effective p-type doping strategy for ambipolar diketopyrrolopyrrole (DPP)-based donor-acceptor (D-A)-type semiconducting copolymer films used in OFETs, without generating structural perturbations. To experimentally verify the surface polarization doping effect of the fluorinated group, two terpolymers─poly(pentafluorostyrene-co-3-azidopropyl-methacrylate-co-propargyl-methacrylate) (5F-SAPMA), wherein fluorinated units are included, and poly(phenyl-methacrylate-co-3-azidopropyl-methacrylate-co-propargyl-methacrylate) (PhAPMA), without fluorinated units─are designed and synthesized for use in OFETs. The synthesized 5F-SAPMA and PhAPMA films were cross-linked through the click reaction between the alkyne and azide units in the terpolymers at 150 °C to provide chemical, thermal, and mechanical stabilities and solvent resistance. The electrical characterization of the OFETs with the newly synthesized terpolymer dielectrics reveals that the surface polarization induced by the fluorinated groups of the 5F-SAPMA dielectrics leads to the generation of additional hole charges and helps minimize the broadening of the extended tail states in the vicinity of the valence band (highest occupied molecular orbital (HOMO) level). This not only enables a transition from the ambipolar to p-type dominant characteristics but also helps increase the hole mobility from 0.023 to 0.305 cm²/(V·s).

Facile photochemical synthesis of main-chain-type semifluorinated alternating copolymers catalyzed by conventional amines or halide salts

In this work, we report a much simpler and low-cost method to prepare main-chain-type semifluorinated alternating copolymers by the formation of a halogen bond (XB) complex between α,ω-diiodoperfluoroalkanes and amines/halide salts. It is interesting that the terminal iodine functional group of the polymer chains is easily lost in the amine-promoted system, while the loss can be significantly reduced by adding a small amount of water. Importantly, the system promoted by halide salts can ensure complete retention of the iodine functional group. Overall, the establishment of this method provides a new strategy for designing smart fluoropolymer materials in a green and environmentally friendly facile manner under irradiation with visible light at room temperature.