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Chang S, Koo JH, Yoo J, Kim MS, Choi MK, Kim DH, Song YM. Flexible and Stretchable Light-Emitting Diodes and Photodetectors for Human-Centric Optoelectronics. Chem Rev 2024; 124:768-859. [PMID: 38241488 DOI: 10.1021/acs.chemrev.3c00548] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/21/2024]
Abstract
Optoelectronic devices with unconventional form factors, such as flexible and stretchable light-emitting or photoresponsive devices, are core elements for the next-generation human-centric optoelectronics. For instance, these deformable devices can be utilized as closely fitted wearable sensors to acquire precise biosignals that are subsequently uploaded to the cloud for immediate examination and diagnosis, and also can be used for vision systems for human-interactive robotics. Their inception was propelled by breakthroughs in novel optoelectronic material technologies and device blueprinting methodologies, endowing flexibility and mechanical resilience to conventional rigid optoelectronic devices. This paper reviews the advancements in such soft optoelectronic device technologies, honing in on various materials, manufacturing techniques, and device design strategies. We will first highlight the general approaches for flexible and stretchable device fabrication, including the appropriate material selection for the substrate, electrodes, and insulation layers. We will then focus on the materials for flexible and stretchable light-emitting diodes, their device integration strategies, and representative application examples. Next, we will move on to the materials for flexible and stretchable photodetectors, highlighting the state-of-the-art materials and device fabrication methods, followed by their representative application examples. At the end, a brief summary will be given, and the potential challenges for further development of functional devices will be discussed as a conclusion.
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Affiliation(s)
- Sehui Chang
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - Ja Hoon Koo
- Department of Semiconductor Systems Engineering, Sejong University, Seoul 05006, Republic of Korea
- Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea
| | - Jisu Yoo
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Min Seok Kim
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - Moon Kee Choi
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Graduate School of Semiconductor Materials and Devices Engineering, Center for Future Semiconductor Technology (FUST), UNIST, Ulsan 44919, Republic of Korea
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
| | - Dae-Hyeong Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University (SNU), Seoul 08826, Republic of Korea
- Department of Materials Science and Engineering, SNU, Seoul 08826, Republic of Korea
- Interdisciplinary Program for Bioengineering, SNU, Seoul 08826, Republic of Korea
| | - Young Min Song
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Artificial Intelligence (AI) Graduate School, GIST, Gwangju 61005, Republic of Korea
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Noh S, Shin J, Lee J, Oh HM, Yu YT, Kim JS. Improvement in Photoelectrochemical Water Splitting Performance of GaN-nanowire Photoanode Using MXene. ACS APPLIED MATERIALS & INTERFACES 2024; 16:8016-8023. [PMID: 38294420 DOI: 10.1021/acsami.3c15698] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/01/2024]
Abstract
The photoelectrochemical water splitting (PEC-WS) performance of a photoanode consisting of GaN nanowires (NWs) is significantly improved using a Ti3C2-MXene coating as an intermediate layer to promote carrier transfer toward the electrolyte. The maximum current density and applied-bias photon-to-current efficiency of the photoanode comprising GaN NWs coated with Ti3C2-MXene (MGNWs) are measured to be 34.24 mA/cm2 and 14.47% at 1.2 and 0.4 V versus a reversible hydrogen electrode (RHE), respectively. These values are much higher than those of the GaN-NW photoanode without Ti3C2-MXene (4.04 mA/cm2 and 1.95%) and also markedly exceed those of previously reported photoanodes. After 8 days of PEC-WS, the current density was measured to be 31.07 mA/cm2, which corresponds to 97.58% of that measured immediately after the reaction started. Based on the time dependence of the current density, the hydrogen evolution rate over the reaction time is calculated to be 0.58 mmol/cm2·h. The results confirm that the PEC-WS performance of the optimized MGNW photoanode is superior to and more stable than those of previously reported photoanodes.
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Affiliation(s)
- Siyun Noh
- Department of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering and Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, South Korea
| | - Jaehyeok Shin
- Department of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering and Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, South Korea
| | - Jinseong Lee
- Department of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering and Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, South Korea
| | - Hye Min Oh
- Department of Physics, Kunsan National University, Gunsan 54150, South Korea
| | - Yeon-Tae Yu
- Department of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering and Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, South Korea
| | - Jin Soo Kim
- Department of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering and Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, South Korea
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Shin J, Yang H, Noh S, Han S, Kim JS. Flexible 1.3 μm photodetector fabricated with InN nanowires and graphene on overhead projector transparency sheet. NANOSCALE 2022; 14:10793-10800. [PMID: 35838175 DOI: 10.1039/d2nr01802k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
We report the first demonstration of flexible photodetectors, operating at the wavelength window of 1.3 μm, fabricated with InN nanowires (NWs) and graphene on an overhead projector transparency (OHP) sheet. The InN NWs, used as an absorption medium for the device, were formed on a Si substrate and exhibited strong emission with a peak wavelength of 1.3 μm at room temperature. They were randomly and horizontally embedded in the graphene sandwich structure functioned as a carrier channel. The photocurrent and photoresponsivity of the flexible photodetector were found to be 1.17 mA and 0.48 A W-1, respectively, at a voltage of 1 V and a light intensity of 60 mW cm-2 of a xenon lamp. The photocurrent measured when the photodetector was bent under a strain of 3% was 1.15 mA, which corresponds to 98.3% compared to that before bending. Moreover, the photocurrent and photoresponsivity of the flexible photodetector measured after the 200 cyclic-bending tests are comparable to those measured before bending.
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Affiliation(s)
- Jaehyeok Shin
- Department of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering, and Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, Republic of Korea.
| | - Hohyun Yang
- Smart Electronics Research Center, Korea Electronics Technology Institute, Iksan 54596, Republic of Korea
| | - Siyun Noh
- Department of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering, and Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, Republic of Korea.
| | - Sangmoon Han
- Precision Biology Research Center, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Mechanical Engineering & Materials Science, Washington University in Saint Louis, MO 66130, USA
| | - Jin Soo Kim
- Department of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering, and Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, Republic of Korea.
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Tan CS, Huang MH. Surface-dependent band structure variations and bond deviations of GaN. Phys Chem Chem Phys 2022; 24:9135-9140. [PMID: 35403651 DOI: 10.1039/d2cp00100d] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Density functional theory (DFT) calculations on a tunable number of GaN (0001) planes give an invariant band structure, density of states (DOS) diagram, and band gap of the GaN unit cell. Dissimilar band structures and DOS diagrams are obtained for 1, 3, 5, 7, and 9 layers of GaN (101̄0) planes, but the same band structure as that of the (0001) plane returns for 2, 4, 6, and 8 (101̄0) planes. Furthermore, 1 to 4 layers of GaN (101̄1) planes exhibit dissimilar band structures, but the GaN unit cell band structure is obtained for 5 (101̄1) planes. While there are no changes to the Ga-N bond length and bond geometry for the (0001) planes, the (101̄0) planes present bond length variation and bond distortion with odd numbers of layers. Bond length and bond direction deviations are also obtained for 1 to 4 (101̄1) planes. These results suggest that slight structural deviations may be present near the GaN surface to produce facet-dependent properties, and such atomic position deviations in the surface layer can be observed in various semiconductors.
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Affiliation(s)
- Chih-Shan Tan
- Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan.
| | - Michael H Huang
- Department of Chemistry, National Tsing Hua University, Hsinchu 300044, Taiwan.
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Kim JM, Haque MF, Hsieh EY, Nahid SM, Zarin I, Jeong KY, So JP, Park HG, Nam S. Strain Engineering of Low-Dimensional Materials for Emerging Quantum Phenomena and Functionalities. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021:e2107362. [PMID: 34866241 DOI: 10.1002/adma.202107362] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/15/2021] [Revised: 11/11/2021] [Indexed: 06/13/2023]
Abstract
Recent discoveries of exotic physical phenomena, such as unconventional superconductivity in magic-angle twisted bilayer graphene, dissipationless Dirac fermions in topological insulators, and quantum spin liquids, have triggered tremendous interest in quantum materials. The macroscopic revelation of quantum mechanical effects in quantum materials is associated with strong electron-electron correlations in the lattice, particularly where materials have reduced dimensionality. Owing to the strong correlations and confined geometry, altering atomic spacing and crystal symmetry via strain has emerged as an effective and versatile pathway for perturbing the subtle equilibrium of quantum states. This review highlights recent advances in strain-tunable quantum phenomena and functionalities, with particular focus on low-dimensional quantum materials. Experimental strategies for strain engineering are first discussed in terms of heterogeneity and elastic reconfigurability of strain distribution. The nontrivial quantum properties of several strain-quantum coupled platforms, including 2D van der Waals materials and heterostructures, topological insulators, superconducting oxides, and metal halide perovskites, are next outlined, with current challenges and future opportunities in quantum straintronics followed. Overall, strain engineering of quantum phenomena and functionalities is a rich field for fundamental research of many-body interactions and holds substantial promise for next-generation electronics capable of ultrafast, dissipationless, and secure information processing and communications.
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Affiliation(s)
- Jin Myung Kim
- Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA
| | - Md Farhadul Haque
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA
| | - Ezekiel Y Hsieh
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA
| | - Shahriar Muhammad Nahid
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA
| | - Ishrat Zarin
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA
| | - Kwang-Yong Jeong
- Department of Physics, Korea University, Seoul, 02841, Republic of Korea
- Department of Physics, Jeju National University, Jeju, 63243, Republic of Korea
| | - Jae-Pil So
- Department of Physics, Korea University, Seoul, 02841, Republic of Korea
| | - Hong-Gyu Park
- Department of Physics, Korea University, Seoul, 02841, Republic of Korea
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, Republic of Korea
- Center for Molecular Spectroscopy and Dynamics, Institute for Basic Science, Seoul, 02841, Republic of Korea
| | - SungWoo Nam
- Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA
- Department of Mechanical and Aerospace Engineering, University of California Irvine, Irvine, CA, 92697, USA
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