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Xu Y, Li D. Enhanced electron transport and optical properties of experimentally synthesized monolayer Si 9C 15: a comprehensive DFT study for nanoelectronics and photocatalytic applications. Phys Chem Chem Phys 2024; 26:21789-21800. [PMID: 39101563 DOI: 10.1039/d4cp01456a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/06/2024]
Abstract
Two-dimensional silicon-carbide (SixCy) materials stand out for their compatibility with current silicon-based technologies, offering unique advantages in nanoelectronics and photocatalysis. In this study, we employ density functional theory and nonequilibrium Green's function methods to investigate the electronic properties, electron transport characteristics, and optoelectronic qualities of experimentally synthesized monolayer Si9C15. Utilizing the modified deformation potential theory formula, we unveil Si9C15's significant directional anisotropy in electron mobility (706.42 cm2 V-1 s-1) compared to holes (432.84 cm2 V-1 s-1) in the a direction. The electrical transport calculations reveal that configurations with a 3 nm channel length demonstrate an ON state when biased, reaching a peak current of 150 nA. Moreover, this maximum current value escalates to 200 nA under tensile strain, marking an increase of approximately 100 times compared to the 5 nm channel, which remains in an OFF state. Si9C15 exhibits high light absorption coefficients (∼105 cm-1) and suitable band edge positions for water splitting at pH 0-7. Applying 1-5% tensile strain can tune the conduction band minimum and valence band maximum closer to the standard redox potentials, enhancing photocatalytic water splitting efficiency. Remarkably, under illumination at pH 0 and 7, Si9C15 can spontaneously catalyze water splitting, demonstrating its potential as a highly efficient photocatalyst. Our findings emphasize the importance of strain control and device length optimization for performance enhancement in nanoelectronics and renewable energy applications, positioning Si9C15 as a promising material for high-performance field-effect transistors and photocatalytic water splitting.
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Affiliation(s)
- Yuehua Xu
- School of Microelectronics and Control Engineering, Changzhou University, Changzhou 213164, Jiangsu, China.
| | - Daqing Li
- School of Microelectronics and Control Engineering, Changzhou University, Changzhou 213164, Jiangsu, China.
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2
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Gao Z, He Y, Xiong K. Two-dimensional Janus monolayers SPtAZ 2 (A = Si and Ge; Z = N, P, and As): insight into their photocatalytic properties via first-principles calculations. Phys Chem Chem Phys 2024; 26:21173-21185. [PMID: 39072651 DOI: 10.1039/d4cp01838a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/30/2024]
Abstract
As a derivative of the two-dimensional material family, two-dimensional Janus materials have garnered widespread attention in recent years. Consequently, in this work, we systematically investigated the stability, electronic properties, photocatalytic properties, optical properties, and carrier mobility of SPtAZ2 (A = Si and Ge; Z = N, P, and As) monolayers using first-principles calculations. In the equilibrium state, we identified four stable structures that exhibited the properties of indirect band gap semiconductors using the HSE06 hybrid functional. Through the exploration of the photocatalytic and optical properties of these four stable structures, we observed that SPtSiN2, SPtSiP2, and SPtGeAs2 monolayers possess favorable band edge positions, high solar-to-hydrogen efficiency (up to 30.74%), and light absorption efficiency, thus endowing these three structures with commendable photocatalytic and light absorption performance. We additionally calculated the carrier mobility of these three structures and identified significant differences in electron and hole mobilities in the same direction, facilitating the effective separation of electrons and holes. Finally, we explored the effects of biaxial strain on the electronic properties, photocatalysis, and light absorption of stable SPtAZ2 monolayers. Our research results not only expand the 2D Janus material family, but also successfully predict a type of photocatalyst capable of utilizing visible light for overall water splitting.
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Affiliation(s)
- Zhen Gao
- Department of Physics, Yunnan University, Kunming 650091, People's Republic of China.
| | - Yao He
- Department of Physics, Yunnan University, Kunming 650091, People's Republic of China.
| | - Kai Xiong
- Materials Genome Institute, School of Materials and Energy, Yunnan University, Kunming 650091, P. R. China.
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Jia M, Jin C, Wang B, Wang B. Ferroelectric polarization promotes a CdS/In 2Se 3 heterostructure for photocatalytic water splitting. Phys Chem Chem Phys 2024; 26:16637-16645. [PMID: 38808387 DOI: 10.1039/d3cp05551e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/30/2024]
Abstract
The rapid recombination of photogenerated electrons and holes greatly limits the efficiency of photocatalyst based on semiconductor. In order to address this issue, we predicted a novel ferroelectric polarized heterojunction photocatalyst, CdS/In2Se3, which enables the spontaneous overall water splitting reaction. The CdS/In2Se3 heterojunction exhibits a band-edge staggered alignment and it is easy to form a direct Z-scheme charge transfer pathway. Besides, the built-in electric field (Eint) in the CdS/In2Se3 heterojunction promoted the charge transfer of CdS/In2Se3, leading to an improved separating efficiency of photo-generated carriers. Moreover, the vertical intrinsic polarized electric field (Ep) not only alters the position of the band edge but also reduces the bandgap limitations commonly associated with photocatalytic materials. Furthermore, the CdS/In2Se3 heterojunctions demonstrate separate catalytic activity for the hydrogen evolution reaction (HER) on the surface of the CdS monolayer and oxygen evolution reaction (OER) on the surface of In2Se3, respectively. Notably, the CdS/In2Se3-down configuration enables spontaneous photocatalytic water splitting in pH = 7, while the CdS/In2Se3-up configuration efficiently facilitates the HER process. This study highlights the significant advantages of CdS/In2Se3 heterojunctions as photocatalytic materials, offering unique insights into the development and research of this promising heterojunction architecture.
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Affiliation(s)
- Minglei Jia
- School of Electro-Mechanical Engineering, Zhongyuan Institute of Science and Technology, Xuchang 461000, China.
| | - Chao Jin
- Institute for Computational Materials Science, Joint Center for Theoretical Physics (JCTP), School of Physics and Electronics, Henan University, Kaifeng, 475004, China.
| | - Baoshan Wang
- Zibo Huatian Rubber Plastic Technology CO. LTD, Zibo, 256410, China
| | - Bing Wang
- Institute for Computational Materials Science, Joint Center for Theoretical Physics (JCTP), School of Physics and Electronics, Henan University, Kaifeng, 475004, China.
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4
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Sun Z, Guan R, Li H, Feng S, Ma L, Shen Q, Ling L, Jia H, Xue J. A novel two-dimensional Janus TiSiGeN 4 monolayer with N vacancies for efficient photocatalytic nitrogen reduction. Phys Chem Chem Phys 2024; 26:12199-12209. [PMID: 38591717 DOI: 10.1039/d3cp06302j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/10/2024]
Abstract
The photocatalytic nitrogen reduction reaction (pNRR) is a clean technology that converts H2O and N2 into NH3 under environmental conditions using inexhaustible sunlight. Herein, we designed a novel two-dimensional (2D) Janus TiSiGeN4 structure and evaluated the pNRR performance of the structure with the presence of nitrogen vacancies at different positions using density functional theory (DFT) calculations. The intrinsic dipoles in the Janus TiSiGeN4 structure generate a built-in electric field, which promotes the migration of photogenerated electrons and holes towards the (001) and (00-1) surfaces, respectively, to achieve efficient charge separation. For the pNRR, the Si atoms exposed after the formation of top N vacancies can realize the efficient activation of N2 through the "acceptance-donation" mechanism, while the presence of middle N vacancies not only suppresses the hydrogen evolution reaction, a competition reaction, but also lowers the reaction barrier for the protonation of N atoms. The limiting potential of TiSiGeN4 with the coexistence of both top and middle N vacancies (TiSiGeN4-VN-mt) is as low as -0.44 V. In addition, the introduction of N vacancies generates defect levels, narrowing the band gap and improving the light response. This work provides theoretical guidance for the design of efficient pNRR photocatalysts under mild conditions.
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Affiliation(s)
- Zhe Sun
- Key Laboratory of Interface Science and Engineering in Advanced Materials (Taiyuan University of Technology), Ministry of Education, Taiyuan 030024, P. R. China.
- College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, P. R. China
| | - Rongfeng Guan
- Key Laboratory for Advanced Technology in Environmental Protection of Jiangsu Province, Yancheng Institute of Technology, Yancheng 224051, P. R. China
| | - Huimin Li
- Key Laboratory of Interface Science and Engineering in Advanced Materials (Taiyuan University of Technology), Ministry of Education, Taiyuan 030024, P. R. China.
- College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, P. R. China
| | - Shilong Feng
- Key Laboratory of Interface Science and Engineering in Advanced Materials (Taiyuan University of Technology), Ministry of Education, Taiyuan 030024, P. R. China.
- College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, P. R. China
| | - Lin Ma
- Key Laboratory of Interface Science and Engineering in Advanced Materials (Taiyuan University of Technology), Ministry of Education, Taiyuan 030024, P. R. China.
- College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, P. R. China
| | - Qianqian Shen
- Key Laboratory of Interface Science and Engineering in Advanced Materials (Taiyuan University of Technology), Ministry of Education, Taiyuan 030024, P. R. China.
- College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, P. R. China
| | - Lixia Ling
- College of Chemistry and Chemical Engineering, Taiyuan University of Technology, Taiyuan 030024, P. R. China
| | - Husheng Jia
- Key Laboratory of Interface Science and Engineering in Advanced Materials (Taiyuan University of Technology), Ministry of Education, Taiyuan 030024, P. R. China.
- College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, P. R. China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan 030032, P. R. China
| | - Jinbo Xue
- Key Laboratory of Interface Science and Engineering in Advanced Materials (Taiyuan University of Technology), Ministry of Education, Taiyuan 030024, P. R. China.
- College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, P. R. China
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5
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Li P, Wang X, Wang H, Tian Q, Xu J, Yu L, Qin G, Qin Z. Biaxial strain modulated electronic structures of layered two-dimensional MoSiGeN 4 Rashba systems. Phys Chem Chem Phys 2024; 26:1891-1903. [PMID: 38053401 DOI: 10.1039/d3cp03833e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
The two-dimensional (2D) MA2Z4 family has received extensive attention in manipulating its electronic structure and achieving intriguing physical properties. However, engineering the electronic properties remains a challenge. Herein, based on first-principles calculations, we systematically investigate the effect of biaxial strains on the electronic structure of 2D Rashba MoSiGeN4 (MSGN), and further explore how the interlayer interactions affect the Rashba spin splitting (RSS) in such strained layered MSGN systems. After applying biaxial strains, the band gap decreases monotonically with increasing tensile strains but increases when the compressive strains are applied. An indirect-direct-indirect band gap transition is induced by applying a moderate compressive strain (<5%) in the MSGN systems. Due to the symmetry breaking and moderate spin-orbit coupling (SOC), the monolayer MSGN possesses an isolated RSS near the Fermi level, which could be effectively regulated to the Lifshitz-type spin splitting (LSS) by biaxial strain. For instance, the LSS ← RSS → LSS transformation of the Fermi surface is presented in the monolayer and a more complex and changeable LSS ← RSS → LSS → RSS evolution is observed in bilayer and trilayer MSGN systems as the biaxial strain varies from -8% to 12%, which actually depends on the appearance, variation, and vanish of the Mexican hat band in the absence of SOC under different strains. The contribution of the Mo-dz2 orbital hybridized with the N-pz orbital in the highest valence band plays a dominant role in band evolution under biaxial strains, where the RSS → LSS evolution corresponds to the decreased Mo-dz2 orbital contribution. Our study highlights the biaxial strain controllable RSS, in particular the introduction and even the evolution of LSS near the Fermi surface, which makes the strained MSGN systems promising candidates for future applications in spintronic devices.
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Affiliation(s)
- Puxuan Li
- International Laboratory for Quantum Functional Materials of Henan, and School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, P. R. China.
| | - Xuan Wang
- International Laboratory for Quantum Functional Materials of Henan, and School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, P. R. China.
- Institute for Frontiers in Astronomy and Astrophysics, Department of Astronomy, Beijing Normal University, Beijing 100875, P. R. China
| | - Haoyu Wang
- International Laboratory for Quantum Functional Materials of Henan, and School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, P. R. China.
| | - Qikun Tian
- International Laboratory for Quantum Functional Materials of Henan, and School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, P. R. China.
- National Key Laboratory of Advanced Design and Manufacturing Technology for Vehicle, College of Mechanical and Vehicle Engineering, Hunan University, Changsha 410082, P. R. China.
| | - Jinyuan Xu
- National Key Laboratory of Advanced Design and Manufacturing Technology for Vehicle, College of Mechanical and Vehicle Engineering, Hunan University, Changsha 410082, P. R. China.
| | - Linfeng Yu
- National Key Laboratory of Advanced Design and Manufacturing Technology for Vehicle, College of Mechanical and Vehicle Engineering, Hunan University, Changsha 410082, P. R. China.
| | - Guangzhao Qin
- National Key Laboratory of Advanced Design and Manufacturing Technology for Vehicle, College of Mechanical and Vehicle Engineering, Hunan University, Changsha 410082, P. R. China.
| | - Zhenzhen Qin
- International Laboratory for Quantum Functional Materials of Henan, and School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, P. R. China.
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6
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Liu MY, Li GQ, He Y, Xiong K. Tunable polarization properties of charge, spin, and valley in Janus VSiGeZ 4 (Z = N, P, As) monolayers. Phys Chem Chem Phys 2024; 26:2341-2354. [PMID: 38165967 DOI: 10.1039/d3cp04889f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/04/2024]
Abstract
Polarization, as an important characterization of the symmetry breaking systems, has attracted tremendous attention in two-dimensional (2D) materials. Due to their significant symmetry breaking, Janus 2D ferrovalley materials provide a desirable platform to investigate the charge, spin, and valley polarization, as well as their coupling effects. Herein, using first-principles calculations, the polarization properties of charge, spin, and valley in Janus VSiGeZ4 (Z = N, P, and As) monolayers are systematically studied. The mirror symmetry breaking leads to a non-zero dipole moment and surface work function difference, indicating the presence of out-of-plane charge polarization. Magnetic properties calculations demonstrate that VSiGeN4 is a 2D-XY magnet with a Berezinskii-Kosterlitz-Thouless temperature of 342 K, while VSiGeP4 and VSiGeAs4 have an out-of-plane magnetization with a Curie temperature below room temperature. The magnetization can be rotated by applying biaxial strain, allowing manipulation of the spin polarization via nonmagnetic means. The spontaneous valley polarization is predicted to be 46, 49, and 70 meV for VSiGeN4, VSiGeP4, and VSiGeAs4, respectively, whose physical origin can be elucidated by employing the model analysis. In particular, the biaxial strain can induce the valley polarization switching from the valence (conduction) band to conduction (valence) band, but it hardly changes the valley polarization strength. Meanwhile, the valley extremum is transformed from the K' (K) to K (K') points. The present work not only provides an underlying insight into the polarization properties of Janus VSiGeZ4 but also offers a class of promising materials for spintronic and valleytronic devices.
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Affiliation(s)
- Ming-Yang Liu
- Department of Physics and Electronic Science, Chuxiong Normal University, Chuxiong 675000, P. R. China.
| | - Guang-Qiang Li
- Department of Physics and Electronic Science, Chuxiong Normal University, Chuxiong 675000, P. R. China.
| | - Yao He
- Department of Physics, Yunnan University, Kunming 650091, P. R. China
| | - Kai Xiong
- Materials Genome Institute, School of Materials and Energy, Yunnan University, Kunming 650091, P. R. China
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7
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Gao Z, He Y, Xiong K. Two-dimensional SPdAZ 2 (A = Si, Ge; Z = N, P, As) monolayers with an intrinsic electric field for high-performance photocatalysis. Phys Chem Chem Phys 2023; 26:185-197. [PMID: 38053430 DOI: 10.1039/d3cp04936a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
Two-dimensional materials exhibiting exceptional photocatalytic properties and a low carrier recombination rate have garnered significant attention. However, such attributes are relatively scarce among conventional two-dimensional materials. Two-dimensional Janus materials, owing to their intrinsic electric field, hold substantial promise in the realm of photocatalysis. In this study, we conducted a comprehensive investigation of the electronic, optical and photocatalytic properties, as well as the carrier mobility of SPdAZ2 (A = Si, Ge; Z = N, P, As) monolayers employing first-principles calculations. Employing the HSE06 hybrid density functional, we discovered that all six structures exhibit semiconductor characteristics with indirect band gaps under equilibrium conditions. Notably, SPdSiP2, SPdSiAs2, and SPdGeP2 monolayers displayed advantageous band edge positions, facilitating effective photocatalytic water decomposition. Furthermore, we computed the carrier mobility of SPdAZ2 monolayers, revealing significant variations in the electron and hole mobility along the same direction, which enhances the effective separation of electrons and holes. Finally, we explored the impact of biaxial strain and an applied electric field on the electronic properties, photocatalysis, and light absorption of SPdAZ2 monolayers. These compelling features underscore the broad potential applications of SPdAZ2 (A = Si, Ge; Z = N, P, As) monolayers in the realm of photocatalytic water decomposition.
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Affiliation(s)
- Zhen Gao
- Department of Physics, Yunnan University, Kunming 650091, People's Republic of China.
| | - Yao He
- Department of Physics, Yunnan University, Kunming 650091, People's Republic of China.
| | - Kai Xiong
- Materials Genome Institute, School of Materials and Energy, Yunnan University, Kunming 650091, P. R. China.
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8
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Wang C, Zhao YN, Lang ZL, Li YG, Su ZM, Tan HQ. Tunable covalent benzo-heterocyclic rings constructed using two-dimensional conjugated polymers for visible-light-driven water splitting. NANOSCALE 2023; 15:18883-18890. [PMID: 37974481 DOI: 10.1039/d3nr04049f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/19/2023]
Abstract
Developing highly efficient, stable, and cost-effective two-dimensional (2D) conjugated polymers (CPs) for overall water splitting (OWS) is critical for producing clean and renewable hydrogen energy, yet it remains a great challenge. Here, we designed eight 2D CPs through the topological assembly of diacetylene and benzene-derived molecular linkers that can offer active sites for hydrogen and oxygen evolution reactions, and explored their structural, electronic, optical, and photocatalytic OWS properties by performing first-principles computations. It is shown that incorporating benzo-heterocyclic rings into CPs can significantly modulate the electronic structures of CPs and broaden the spectral absorption, suitable for visible-light-driven OWS. Remarkably, through a range of screening criteria, including stability, electronic band structures, band edge alignments, and photocatalytic activity, we found that CP-4 based on diacetylene and benzotrifuran can spontaneously trigger the OWS in a neutral environment under its own light-induced bias, eliminating the need for sacrificial agents or cocatalysts. Specifically, the HER active site is primarily located at diacetylene moieties, while the OER active site is mainly concentrated on the benzo-heterocyclic rings. Moreover, the ideal STH efficiency for OWS on CP-4 was estimated to be 13.87%, highlighting its potential as a prospective photocatalyst for large-scale industrial OWS. Our findings open a door to the rational design of novel polymer photocatalysts for OWS.
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Affiliation(s)
- Cong Wang
- School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun, 130022, China
- Engineering Research Center of Optoelectronic Functional Materials, Ministry of Education, Changchun 130022, China
| | - Ying-Nan Zhao
- Key Laboratory of Polyoxometalate and Reticular Material Chemistry of Ministry of Education, Faculty of Chemistry, Northeast Normal University, Changchun 130024, China.
| | - Zhong-Ling Lang
- Centre for Advanced Optoelectronic Functional Materials Research, Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun 130024, China.
| | - Yang-Guang Li
- Key Laboratory of Polyoxometalate and Reticular Material Chemistry of Ministry of Education, Faculty of Chemistry, Northeast Normal University, Changchun 130024, China.
| | - Zhong-Min Su
- School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun, 130022, China
- Key Laboratory of Polyoxometalate and Reticular Material Chemistry of Ministry of Education, Faculty of Chemistry, Northeast Normal University, Changchun 130024, China.
- State Key Laboratory of Supramolecular Structure and Materials, Institute of Theoretical Chemistry, College of Chemistry, Jilin University, Changchun 130021, China
| | - Hua-Qiao Tan
- Key Laboratory of Polyoxometalate and Reticular Material Chemistry of Ministry of Education, Faculty of Chemistry, Northeast Normal University, Changchun 130024, China.
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Zhao J, Qi Y, Yao C, Zeng H. Modulating the electronic properties and band alignments of the arsenene/MoSi 2N 4 van der Waals heterostructure via applying strain and electric field. Phys Chem Chem Phys 2023. [PMID: 38032541 DOI: 10.1039/d3cp04877b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/01/2023]
Abstract
The two-dimensional (2D) MoSi2N4 monolayer fabricated recently has attracted extensive attention due to its exotic electronic properties and excellent stability for future applications. Using first-principles calculations, we have shown that the electronic properties of the arsenene/MoSi2N4 van der Waals (vdW) heterostructure can be effectively modulated by applying in-plane/vertical strain and vertical electric field. The arsenene/MoSi2N4 vdW heterostructure has type-II band alignment, facilitating the separation of photogenerated electron-hole pairs. The heterostructure is predicted to have an indirect bandgap of about 0.52 eV by using the PBE functional (0.87 eV by using the hybrid functional). Furthermore, under εz = 0.5 Å vertical tensile strain or -0.05 V Å-1 vertical electric field, the arsenene/MoSi2N4 heterostructure can not only experience transition from an indirect to a direct bandgap semiconductor, but also exhibit type-II to type-I band alignment transition. The calculated optical absorption properties reveal that the formation of the vdW heterostructure can effectively enhance the light absorption, and the absorption coefficient in visible and ultraviolet regions is much higher than those of the arsenene and the MoSi2N4 monolayer. Most importantly, based on charge transfer analysis, we proposed the modulation mechanism of the electronic properties of the vdW heterostructure influenced by vertical strain and electric field. Our study provides physical insights into manipulating the electronic and optoelectronic properties of MoSi2N4 based vdW heterostructures, which may be helpful for their practical applications.
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Affiliation(s)
- Jun Zhao
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu 210023, China.
| | - Yunxi Qi
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu 210023, China.
| | - Can Yao
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu 210023, China.
| | - Hui Zeng
- School of Microelectronics, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, China.
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10
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Oreshonkov AS, Sukhanova EV, Popov ZI. Phonon dynamics in MoSi 2N 4: insights from DFT calculations. Phys Chem Chem Phys 2023; 25:29831-29841. [PMID: 37888343 DOI: 10.1039/d3cp02921b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/28/2023]
Abstract
We have reported the density functional theory investigations on the monolayered, 2 layered and bulk MoSi2N4 in three structural modifications called α1 [Y.-L. Hong, et al., Chemical Vapor Deposition of Layered Two-Dimensional MoSi2N4 Materials, Science, 2020, 369(6504), 670-674, DOI: 10.1126/science.abb7023], α2 and α3 [Y. Yin, Q. Gong, M. Yi and W. Guo, Emerging Versatile Two-Dimensional MoSi2N4 Family, Adv. Funct. Mater., 2023, 2214050, DOI: 10.1002/adfm.202214050]. We showed that in the case of monolayers the difference in total energies is less than 0.1 eV between α1 and α3 phases, and less than 0.2 eV between α1 and α2 geometries. The most energetically favorable layer stacking for the bulk structures of each phase was investigated. All considered modifications are dynamically stable from a single layer to a bulk structure in energetically favorable stacking. Raman spectra for the monolayered, 2 layered and bulk structures were simulated and the vibrational analysis was performed. The main difference in the obtained spectra is associated with the position of the strongest band which depends on the Mo-N bond length. According to the obtained data, we can conclude that the Raman line at 348 cm-1 in the experimental spectra of MoSi2N4 can have more complex explanation than just Γ-point Raman-active vibration as was discussed before in [Y.-L. Hong, et al., Chemical Vapor Deposition of Layered Two-Dimensional MoSi2N4 Materials, Science, 2020, 369(6504), 670-674, DOI: 10.1126/science.abb7023].
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Affiliation(s)
- A S Oreshonkov
- Emanuel Institute of Biochemical Physics of Russian Academy of Sciences, Moscow 119334, Russia
- Laboratory of Molecular Spectroscopy, Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk 660036, Russia.
- School of Engineering and Construction, Siberian Federal University, Krasnoyarsk 660041, Russia
| | - E V Sukhanova
- Emanuel Institute of Biochemical Physics of Russian Academy of Sciences, Moscow 119334, Russia
- Moscow Institute of Physics and Technology, Institutsky lane 9, Dolgoprudny, Moscow region, 141700, Russia
| | - Z I Popov
- Emanuel Institute of Biochemical Physics of Russian Academy of Sciences, Moscow 119334, Russia
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Cai X, Chen G, Li R, Yu W, Yang X, Jia Y. Janus MoAZ 3H (A = Ge, Si; Z = N, P, As) monolayers: a new class of semiconductors exhibiting excellent photovoltaic and catalytic performances. Phys Chem Chem Phys 2023; 25:29594-29602. [PMID: 37877368 DOI: 10.1039/d3cp02622a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/26/2023]
Abstract
Due to the asymmetrical structure in the vertical direction, Janus two-dimensional (2D) monolayer (ML) materials possess some unique physical properties, holding great promise for nanoscale devices. In this paper, based on the newly discovered MoA2Z4 (A = Si, Ge; Z = N, P, As) ML, we propose a class of 2D Janus MoAZ3H ML materials with good stability and excellent mechanical properties using first-principles calculations. We demonstrate that the novel Janus MoAZ3H ML materials are all semiconductors with bandgaps ranging from 0.69 to 2.44 eV, giving rise to good absorption in the visible light region. Especially, both MoSiN3H and MoGeN3H MLs can be used as catalysts for producing hydrogen through water splitting. This catalytic property is much more efficient than that of the MoA2Z4 ML, attributed to the intrinsic electric field induced by the vertical asymmetry effectively separating electrons and holes. More importantly, the carrier mobility of the MoAZ3H ML is up to 103-104 cm2 V-1 s-1 due to the large elastic modulus or small effective mass. Additionally, the electronic properties of the MoAZ3H ML can be easily tuned by strain. Our results suggest a new strategy for designing novel 2D Janus materials, which not only expands the members in the 2D MA2Z4-based Janus family, but also provide candidates with excellent performances in photovoltaic and catalytic fields.
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Affiliation(s)
- Xiaolin Cai
- School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo 454000, China.
| | - Guoxing Chen
- School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo 454000, China.
| | - Rui Li
- School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo 454000, China.
| | - Weiyang Yu
- School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo 454000, China.
| | - Xuefeng Yang
- School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo 454000, China.
| | - Yu Jia
- Key Laboratory for Special Functional Materials of Ministry of Education, Collaborative Innovation Center of Nano Functional Materials and Applications, School of Material Science and Engineering, Henan University, Kaifeng 475004, China.
- International Laboratory for Quantum Functional Materials of Henan, and School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, China
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12
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Gao Z, He Y, Xiong K. Strain and electric field induced electronic property modifications in two-dimensional Janus SZrAZ 2 (A = Si, Ge; Z = P, As) monolayers. Dalton Trans 2023; 52:15918-15927. [PMID: 37840521 DOI: 10.1039/d3dt02904b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/17/2023]
Abstract
Recently, significant attention has been directed towards two-dimensional Janus materials owing to their unique structure and novel properties. In this work, we have introduced novel two-dimensional Janus monolayers, SZrAZ2 (A = Si, Ge; Z = P, As), through first principles. Our primary focus was the investigation of the controllable electronic properties exhibited by the Janus SZrAZ2 structures under the influence of strain and an external electric field. Our research findings indicate the dynamic and thermodynamic stability of Janus SZrAZ2 (A = Si, Ge; Z = P, As) monolayers. In the equilibrium state, these monolayers exhibit properties of an indirect band gap semiconductor. When subjected to biaxial strain and an external electric field, we observed that the dependency of SZrSiAs2 and SZrGeAs2 monolayers on an external electric field is very weak. Their electronic properties can only be modulated by applying biaxial strain. For SZrSiP2 and SZrGeP2 monolayers, their electronic properties can be modulated under biaxial strain and an external electric field, resulting in a transition from semiconducting to metallic behavior. Finally, we calculated the carrier mobility of these four structures and observed that the SZrGeAs2 monolayer exhibits a hole mobility of up to 597.52 cm2 s-1 V-1 in the x-direction, whereas the SZrSiP2 monolayer demonstrates an electron mobility of up to 479.30 cm2 s-1 V-1 in the y-direction. In the x-direction, the electron mobility of SZrSiAs2 and SZrGeP2 monolayers was measured to be 189.88 and 528.44 cm2 s-1 V-1, respectively. These values are greater than or equivalent to that of experimentally synthesized MoS2 (∼200 cm2 s-1 V-1). Our research lays the foundation for utilizing two-dimensional Janus materials in electronic devices.
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Affiliation(s)
- Zhen Gao
- Department of Physics, Yunnan University, Kunming 650091, People's Republic of China.
| | - Yao He
- Department of Physics, Yunnan University, Kunming 650091, People's Republic of China.
| | - Kai Xiong
- Materials Genome Institute, School of Materials and Energy, Yunnan University, Kunming 650091, P. R. China.
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13
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Li J, Li Y, Pun EYB, Lin H. Recyclable and flexible Bi(Ho 3+-Yb 3+)OBr/g-C 3N 4 composite porous fiber for efficient water purification and real-time temperature sensing. ENVIRONMENTAL SCIENCE AND POLLUTION RESEARCH INTERNATIONAL 2023; 30:117545-117561. [PMID: 37872340 DOI: 10.1007/s11356-023-30484-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/20/2023] [Accepted: 10/11/2023] [Indexed: 10/25/2023]
Abstract
Herein, an electrospinning porous nanofiber with large specific surface area, excellent flexibility, remarkable tensile strength, and high stability of thermal degradation has been developed by loading Ho3+/Yb3+ co-doped BiOBr/g-C3N4 (BHY/CN) heterojunction photocatalysts on polyacrylonitrile (PAN) nanofibers. The optimized BHY/CN-2 nanofiber demonstrates outstanding photocatalytic activity for the degradation of 98.83% tetracycline (TC, 60 min) and 99.06% rhodamine B (RhB, 90 min) under simulated sunlight irradiation, and maintains a high level of reusability and recycling stability in three cycles. In addition, temperature monitoring of the catalytic degradation process can be feedback by (5F4, 5S2) → 5I8 and 5F5 → 5I8 radiation transitions of Ho3+ with excellent sensitivity. More importantly, the nanofiber luminescence performance is enhanced by the doping of g-C3N4, which maintain the effective upconversion luminescence properties even in water, providing a reliable reference for real-time monitoring and feedback of the operating temperature, and further expanding the application fields of photocatalysts.
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Affiliation(s)
- Junhan Li
- School of Textile and Material Engineering, Dalian Polytechnic University, Dalian, 116034, People's Republic of China
| | - Yue Li
- Department of Electrical Engineering and State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Hong Kong Special Administrative Region, People's Republic of China
| | - Edwin Yue Bun Pun
- Department of Electrical Engineering and State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Hong Kong Special Administrative Region, People's Republic of China
| | - Hai Lin
- School of Textile and Material Engineering, Dalian Polytechnic University, Dalian, 116034, People's Republic of China.
- Department of Electrical Engineering and State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Hong Kong Special Administrative Region, People's Republic of China.
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14
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Liu D, Fang C, Zhang Q, Zhang X, Cui X, Shi C, Xu J, Yang M. Kagome-like BiP 3 Monolayer: An Emerging Quasi-Direct Auxetic Semiconductor Coupled with High Anisotropic Mobility toward Visible-Light-Driven Photoelectrocatalytic pH-Robust Overall Water-Splitting. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2023; 39:12890-12909. [PMID: 37650549 DOI: 10.1021/acs.langmuir.3c01840] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/01/2023]
Abstract
Two-dimensional (2D) Janus materials exhibit an outstanding potential that can meet the rigorous requirements of photocatalytic water splitting resulting from their unique atomic arrangement. However, these materials are quite scarce. Through ab initio density functional theory calculations, we introduce a kagome topology into the honeycomb lattice of blue phosphorene using phosphorus and bismuth atoms to build a hybrid honeycomb-like kagome lattice, realized by a hitherto unknown kagome-like Janus-like BiP3 monolayer with robust stability. Excitingly, the out-of-plane asymmetry benefiting from kagome and honeycomb topologies gives rise to a significantly negative out-of-plane Poisson's ratio and an obvious built-in electric field pointing from the sublayer of the P atom to the sublayer of the Bi atom. In conjunction with the investigations that encompass semiconducting properties, such as a quasi-direct gap, suitable band-edge positions, effective visible-light absorption, and high carrier mobility, the BiP3 monolayer achieves overall water splitting at pH 0-14 regardless of strain. Moreover, this intrinsic electric field provides a sufficient photogenerated carrier driving force for water splitting. The bare BiP3 comprises P and Bi atoms that function as catalysts for the hydrogen evolution reaction (HER) and oxygen evolution reaction (OER) active sites, respectively. Upon exposure to light, the reaction of water into H2 and O2 can be observed across a pH range of 0-14. Meanwhile, by designing a transition-metal single-atom catalyst (TM@BiP3), our investigations have shown that embedding a single TM on BiP3 is a feasible route to improving the HER/OER activity by reducing the overpotentials to -0.039 and 0.58 eV for Mo and Os atoms, respectively. In this case, the positive value of the external potential acts as a sufficient OER driving force, i.e., in the light environment, the Os@BiP3 system can promote water molecules spontaneously oxidized into O2 at pH 0-14.
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Affiliation(s)
- Di Liu
- Department of Physics, University of Shanghai for Science and Technology, Shanghai 200093, People's Republic of China
| | - Chunyao Fang
- Department of Physics, University of Shanghai for Science and Technology, Shanghai 200093, People's Republic of China
| | - Qiang Zhang
- Department of Physics, University of Shanghai for Science and Technology, Shanghai 200093, People's Republic of China
| | - Xihang Zhang
- Department of Physics, University of Shanghai for Science and Technology, Shanghai 200093, People's Republic of China
| | - Xiaomeng Cui
- Department of Physics, University of Shanghai for Science and Technology, Shanghai 200093, People's Republic of China
| | - Chenglong Shi
- Department of Physics, University of Shanghai for Science and Technology, Shanghai 200093, People's Republic of China
| | - Jingcheng Xu
- School of Materials and Chemistry, University of Shanghai for Science and Technology, Shanghai 200093, People's Republic of China
| | - Mengyu Yang
- Department of Physics, University of Shanghai for Science and Technology, Shanghai 200093, People's Republic of China
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15
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He M, Chen X, Zhou Y, Xu C, Li X, Luo Q, Yang J. A First-Principles Study of Regulating Spin States of MoSi 2N 4 Supported Single-Atom Catalysts Via Doping Strategy for Enhancing Electrochemical Nitrogen Fixation Activity. J Phys Chem Lett 2023; 14:7100-7107. [PMID: 37530607 DOI: 10.1021/acs.jpclett.3c01576] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/03/2023]
Abstract
Regulating the spin states of catalysts to enhance activity is fascinating but challenging. Herein, by using first-principles calculations, single transition-metal (TM) atoms Mo, Re, and Os embedded in nitrogen vacancy of the MoSi2N4 monolayer (TM1/VN-MoSi2N4) were screened out as potential catalysts for electrochemical nitrogen reduction reaction to ammonia. Our findings suggest that the spin states of these active centers can be precisely and gradually tuned through a simple doping strategy. Additionally, doping one O atom into the Mo1/VN-MoSi2N4 system as an example significantly improves catalytic activity. The spin state of Mo1 transitions from high to intermediate while simultaneously breaking the C3v symmetry of the supported atom. These factors synergistically lead to better orbital overlap between the catalyst and intermediates, facilitating subsequent protonation processes and overall catalytic activity. This work provides novel insight into designing, precisely controlling, and revisiting the spin-related catalytic performance in heterogeneous catalysis.
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Affiliation(s)
- Mingqi He
- Department of Chemical Physics, Key Laboratory of Precision and Intelligent Chemistry, Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, Anhui, China
| | - Xing Chen
- Institutes of Physical Science and Information Technology, Department of Chemistry, Anhui University, Hefei 230601, Anhui, China
| | - Yanan Zhou
- School of Material Science and Chemical Engineering, Ningbo University, Ningbo 315211, China
| | - Chang Xu
- Institutes of Physical Science and Information Technology, Department of Chemistry, Anhui University, Hefei 230601, Anhui, China
| | - Xingxing Li
- Department of Chemical Physics, Key Laboratory of Precision and Intelligent Chemistry, Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, Anhui, China
| | - Qiquan Luo
- Institutes of Physical Science and Information Technology, Department of Chemistry, Anhui University, Hefei 230601, Anhui, China
| | - Jinlong Yang
- Department of Chemical Physics, Key Laboratory of Precision and Intelligent Chemistry, Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, Anhui, China
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16
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Liu MY, He Y, Li X, Xiong K. Tuning of the electronic and photocatalytic properties of Janus WSiGeZ 4 (Z = N, P, and As) monolayers via strain engineering. Phys Chem Chem Phys 2023; 25:7278-7288. [PMID: 36810916 DOI: 10.1039/d2cp05224e] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/05/2023]
Abstract
Recently, MA2Z4 materials have received tremendous attention due to their amazing electronic, spintronic, and optoelectronic properties. In this work, we propose a class of 2D Janus materials WSiGeZ4 (Z = N, P, and As). It was found that their electronic and photocatalytic properties are sensitive to the change of the Z element. Biaxial strain results in an indirect-direct band gap transition in WSiGeN4 and a semiconductor-metal transition in WSiGeP4 and WSiGeAs4. Comprehensive studies demonstrate that these transitions as well as valley-contrasting physics are closely related to the crystal field induced orbital distribution. By taking into account several features of the excellent photocatalysts reported for water splitting, we predict three promising photocatalytic materials WSi2N4, WGe2N4, and WSiGeN4. Their optical and photocatalytic properties can be well modulated by applying biaxial strain. Our work not only provides a class of potential electronic and optoelectronic materials but also enriches the study of Janus MA2Z4 materials.
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Affiliation(s)
- Ming-Yang Liu
- School of Physics and Electronic Science, Chuxiong Normal University, Chuxiong 675000, P. R. China.
| | - Yao He
- Department of Physics, Yunnan University, Kunming 650091, P. R. China
| | - Xuan Li
- College of Physics and Information Engineering, Zhaotong University, Zhaotong 657000, P. R. China
| | - Kai Xiong
- Materials Genome Institute, School of Materials and Energy, Yunnan University, Kunming 650091, P. R. China
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17
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Vi VT, Linh TP, Nguyen CQ, Hieu NN. Tunable Electronic Properties of Novel 2D Janus MSiGeN
4
(M = Ti, Zr, Hf) Monolayers by Strain and External Electric Field. ADVANCED THEORY AND SIMULATIONS 2022. [DOI: 10.1002/adts.202200499] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
Affiliation(s)
- Vo T.T. Vi
- Faculty of Basic Sciences University of Medicine and Pharmacy Hue University Hue 530000 Viet Nam
| | - Tran P.T. Linh
- Faculty of Physics Hanoi National University of Education Ha Noi 100000 Viet Nam
| | - Cuong Q. Nguyen
- Institute of Research and Development Duy Tan University Da Nang 550000 Viet Nam
- Faculty of Natural Sciences Duy Tan University Da Nang 550000 Viet Nam
| | - Nguyen N. Hieu
- Institute of Research and Development Duy Tan University Da Nang 550000 Viet Nam
- Faculty of Natural Sciences Duy Tan University Da Nang 550000 Viet Nam
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18
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Weng Y, Ma X, Yuan G, Lv H, Yuan Z. Novel Janus MoSiGeN 4 nanosheet: adsorption behaviour and sensing performance for NO and NO 2 gas molecules. RSC Adv 2022; 12:24743-24751. [PMID: 36199889 PMCID: PMC9433950 DOI: 10.1039/d2ra03957e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/27/2022] [Accepted: 08/17/2022] [Indexed: 11/21/2022] Open
Abstract
A novel Janus MoSiGeN4 nanosheet is proposed for detecting poisonous gas molecules. Herein, the adsorption behaviour and sensing performance of both sides of the MoSiGeN4 monolayer to NO and NO2 gas molecules were investigated by first-principles calculations. Firstly, it is found that the MoSiGeN4 monolayer exhibits structural stability and indirect gap semiconductor characteristics. The largest adsorption energy of NO2 molecules on the MoSiGeN4 monolayer is -0.24 eV, which is higher than the -0.13 eV for NO molecules. Of course, the physisorption between gas molecules and the MoSiGeN4 monolayer appears with slight charge transfer. It is confirmed that NO molecules and NO2 molecules act as electron donors and electron acceptors, respectively. Meanwhile, the generation of small band gaps and impurity levels in the electronic structures after gas adsorption is in favour of the enhancement of electronic conductivity. Furthermore, the longest recovery times of NO and NO2 molecules are predicted to be 0.15 and 10.67 ns at room temperature, and the lateral diffusion at the surface requires crossing a large energy barrier. These findings provide indisputable evidence for further design and fabrication of highly sensitive gas sensors based on the MoSiGeN4 monolayer.
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Affiliation(s)
- Yixin Weng
- School of Science, Hubei University of Technology Wuhan 430068 China
| | - Xinguo Ma
- School of Science, Hubei University of Technology Wuhan 430068 China
| | - Gang Yuan
- School of Science, Hubei University of Technology Wuhan 430068 China
| | - Hui Lv
- Hubei Engineering Technology Research Centre of Energy Photoelectric Device and System, Hubei University of Technology Wuhan 430068 China
| | - Zhongyong Yuan
- Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), College of Chemistry, Nankai University Tianjin 300071 China
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19
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Li Y, Li J, Wan L, Li J, Qu H, Ding C, Li M, Yu D, Fan K, Yao H. The First-Principle Study on Tuning Optical Properties of MA 2Z 4 by Cr Replacement of Mo Atoms in MoSi 2N 4. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:2822. [PMID: 36014687 PMCID: PMC9415143 DOI: 10.3390/nano12162822] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/01/2022] [Revised: 08/11/2022] [Accepted: 08/14/2022] [Indexed: 06/15/2023]
Abstract
Recently, with the successful preparation of MoSi2N4, an emerging family of two-dimensional (2D) layered materials has been predicted with a general formula of MA2Z4 (M: an early transition metal, A: Si or Ge and Z: N, P, or As). In terms of this new type of 2D material, how to effectively tune its light absorption properties is unclear. We systematically discuss the effects of replacing Mo with Cr atoms on the lattice structure, energy bands, and light absorption properties of 2D monolayer MoSi2N4 using density functional theory (DFT) and the Vienna Ab initio Simulation Package (VASP). Additionally, the results show that the single replacement of the atom Cr has no significant effect on the lattice structure of the outermost and sub-outer layers but plays a major role in the accumulation of electrons. In addition, the 2D MoSi2N4, Mo0.5Cr0.5Si2N4, and CrSi2N4 all have effective electron-hole separation properties. In the visible region, as the excited state increases, the required excitation energy is higher and the corresponding wavelength of light is shorter. It was found that the ultraviolet (UV)-visible spectra are red-shifted when Cr atoms replace Mo atoms in MoSi2N4; when Cr atoms and Mo atoms coexist, the coupling between Cr atoms and Mo atoms achieves modulation of the ultraviolet (UV)-visible spectra. Finally, we reveal that doping M-site atoms can effectively tune the light absorption properties of MA2Z4 materials. These results provide a strategy for the design of new 2D materials with high absorption properties.
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Affiliation(s)
- Yongsheng Li
- Center on Nano-Energy Research, Guangxi Key Laboratory for Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University, Nanning 530004, China
| | - Jiawei Li
- Center on Nano-Energy Research, Guangxi Key Laboratory for Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University, Nanning 530004, China
| | - Lingyu Wan
- Center on Nano-Energy Research, Guangxi Key Laboratory for Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University, Nanning 530004, China
| | - Jiayu Li
- Center on Nano-Energy Research, Guangxi Key Laboratory for Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University, Nanning 530004, China
| | - Hang Qu
- Center on Nano-Energy Research, Guangxi Key Laboratory for Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University, Nanning 530004, China
| | - Cui Ding
- Center on Nano-Energy Research, Guangxi Key Laboratory for Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University, Nanning 530004, China
| | - Mingyang Li
- State Key Laboratory of Pollution Control and Resource Reuse, School of the Environment, Nanjing University, Nanjing 210023, China
| | - Dan Yu
- Center on Nano-Energy Research, Guangxi Key Laboratory for Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University, Nanning 530004, China
| | - Kaidi Fan
- Center on Nano-Energy Research, Guangxi Key Laboratory for Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University, Nanning 530004, China
| | - Huilu Yao
- Center on Nano-Energy Research, Guangxi Key Laboratory for Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University, Nanning 530004, China
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20
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Zhang C, Wei F, Zhang X, Chen W, Chen C, Hao J, Jia B. Thermoelectric properties of monolayer MoSi2N4 and MoGe2N4 with large Seebeck coefficient and high carrier mobility: A first principles study. J SOLID STATE CHEM 2022. [DOI: 10.1016/j.jssc.2022.123447] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/31/2022]
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21
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Zhou Y, Zhou L, He J. 2D Nb 3SBr 7 and Ta 3SBr 7: Experimentally Achievable Janus Photocatalysts with Robust Coexistence of Strong Optical Absorption, Intrinsic Charge Separation, and Ultrahigh Solar-to-Hydrogen Efficiency. ACS APPLIED MATERIALS & INTERFACES 2022; 14:1643-1651. [PMID: 34939780 DOI: 10.1021/acsami.1c17721] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Recently, two-dimensional (2D) Janus semiconductors have attracted great attention in photocatalytic applications owing to their extraordinary properties, especially the intrinsic polarization-induced spontaneous carrier separation, strong optical absorption, and ultrahigh solar-to-hydrogen (STH) efficiency. However, experimental achievable candidates for 2D intrinsic Janus semiconductors are rarely reported. Herein, based on density functional theory (DFT) calculations, we uncovered two new 2D photocatalysts, namely, Janus Nb3SBr7 and Ta3SBr7 bilayers. We revealed that both structures are highly feasible to be obtained from their bulk counterparts. Excitingly, intrinsic charge separations emerge in both structures, which are beneficial to the repression of recombinations of their photoexcited carriers. Optical absorptions of both structures can be activated in the visible and even infrared regions. Most interestingly, Nb3SBr7 and Ta3SBr7 bilayers can exhibit ultrahigh STH efficiencies of 35% and 31%, respectively, which are larger than those of most 2D Janus structures. In addition, we further found that these distinguished photocatalytic properties are rather robust and are independent of their stacking modes. Experimental feasibilities and robust coexistences of intrinsic charge separations, ultrahigh STH efficiencies, and strong absorptions endow Nb3SBr7 and Ta3SBr7 bilayers as hopeful photocatalysts for water splitting.
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Affiliation(s)
- Yungang Zhou
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Liujiang Zhou
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Junjie He
- Bremen Center for Computational Materials Science, University of Bremen, Am Fallturm 1, Bremen 28359, Germany
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22
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Xiong R, Shu Y, Yang X, Zhang Y, Wen C, Anpo M, Wu B, Sa B. Direct Z-scheme WTe 2/InSe van der Waals heterostructure for overall water splitting. Catal Sci Technol 2022. [DOI: 10.1039/d2cy00107a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
WTe2/InSe is a direct Z-scheme vdW heterostructure for water splitting. The Te-vacancy can effectively lower the energy of the HER, and the overall water splitting can proceed spontaneously on the surface of the WTe2/InSe heterostructure when pH > 7.
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Affiliation(s)
- Rui Xiong
- Key Laboratory of Eco-materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, P. R. China
| | - Yu Shu
- Key Laboratory of Eco-materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, P. R. China
| | - Xuhui Yang
- College of Environmental Science and Engineering, Fujian Key Laboratory of Pollution Control & Resource Reuse, Fujian Normal University, Fuzhou, 350007 Fujian, P. R. China
| | - Yinggan Zhang
- College of Materials, Fujian Provincial Key Laboratory of Theoretical and Computational Chemistry, Xiamen University, Xiamen 361005, P. R. China
| | - Cuilian Wen
- Key Laboratory of Eco-materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, P. R. China
| | - Masakazu Anpo
- State Key Laboratory of Photocatalysis on Energy and Environment, Fuzhou University, Fuzhou 350116, P. R. China
| | - Bo Wu
- Key Laboratory of Eco-materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, P. R. China
| | - Baisheng Sa
- Key Laboratory of Eco-materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, P. R. China
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23
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Gao X, Shen Y, Liu J, Lv L, Zhou M, Zhou Z, Feng YP, Shen L. Boost the large driving photovoltages for overall water splitting in direct Z-scheme heterojunctions by interfacial polarization. Catal Sci Technol 2022. [DOI: 10.1039/d2cy00333c] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Using direct Z-scheme heterojunction photocatalysts has been regarded as one of the most effective methods to separate photogenerated carriers for photocatalytic redox reactions of water splitting.
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Affiliation(s)
- Xu Gao
- School of Physics, Harbin Institute of Technology, Harbin 150001, PR China
| | - Yanqing Shen
- School of Physics, Harbin Institute of Technology, Harbin 150001, PR China
| | - Jiajia Liu
- School of Physics, Harbin Institute of Technology, Harbin 150001, PR China
| | - Lingling Lv
- School of Physics, Harbin Institute of Technology, Harbin 150001, PR China
| | - Min Zhou
- School of Physics, Harbin Institute of Technology, Harbin 150001, PR China
| | - Zhongxiang Zhou
- School of Physics, Harbin Institute of Technology, Harbin 150001, PR China
| | - Yuan Ping Feng
- Department of Physics, National University of Singapore, 117551 Singapore
| | - Lei Shen
- Department of Mechanical Engineering, National University of Singapore, 117575 Singapore
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24
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Nguyen ST, Cuong PV, Cuong N, Nguyen CV. First principles prediction of two-dimensional Janus XMoGeN2 (X = S, Se and Te) materials. Dalton Trans 2022; 51:14338-14344. [DOI: 10.1039/d2dt02222b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Motivated by the successful synthesis of two-dimensional MoSi$_2$N$_4$ [Science 369 (2020) 670-674] and Janus MoSSe [Nature Nanotechnol. 12 (2017) 744-749], in this work, we propose a novel 2D Janus XMoGeN$_2$...
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25
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Pham KD. First principles prediction of electronic, mechanical, transport and optical properties of the silicane/Ga 2SSe heterostructure. RSC Adv 2022; 12:31935-31942. [PMID: 36380915 PMCID: PMC9641579 DOI: 10.1039/d2ra05723a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/11/2022] [Accepted: 10/27/2022] [Indexed: 11/11/2022] Open
Abstract
In this work, we investigated the electronic structure, and mechanical, transport and optical properties of the van der Waals heterostructure formed from silicane (SiH) and Janus Ga2SSe monolayers using first-principles prediction. The out-of-plane symmetry in the Janus Ga2SSe monolayer leads to the formation of two different types of Ga2SSe/SiH heterostructure, namely SGa2Se/SiH and SeGa2S/SiH stacking patterns. All stacking patterns of the SiH/Ga2SSe heterostructure are thermodynamically, mechanically and energetically stable at room temperature. Furthermore, the generation of the SiH/Ga2SSe heterostructure gives rise to a reduction in the band gap, demonstrating that the electrons move faster from the valence bands to the conduction bands. The SiH/Ga2SSe heterostructure is a semiconductor with a direct band gap of about 0.68 or 0.95 eV, depending on the stacking pattern. The SiH/Ga2SSe heterostructure forms type-II band alignment for all stacking patterns, indicating that the photogenerated carriers are separated effectively, thus enhancing the photocatalytic performance. Moreover, the carrier mobilities for electrons and holes of the Ga2SSe/SiH heterostructure are higher than those of the constituent SiH and Ga2SSe monolayers in both the x and y directions, suggesting that the performances of electronic devices based on the Ga2SSe/SiH heterostructure would be excellent and reliable. The formation of the Ga2SSe/SiH heterostructure also gives rise to an enhancement of the absorption coefficient in both the visible and ultraviolet regions. Our findings could give valuable guidance for the design of high-efficiency devices based on the SiH/Ga2SSe heterostructure. In this work, we investigated the electronic structure, and mechanical, transport and optical properties of the van der Waals heterostructure formed from silicane (SiH) and Janus Ga2SSe monolayers using first-principles prediction.![]()
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Affiliation(s)
- Khang D. Pham
- Institute of Applied Technology, Thu Dau Mot University, Binh Duong Province, Vietnam
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Wang Z, Zhao J, Wan Q, Lin S. Halogen-driven bandgap opening in graphdiyne for overall photocatalytic water splitting. CHINESE J CHEM PHYS 2021. [DOI: 10.1063/1674-0068/cjcp2110195] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022]
Affiliation(s)
- Zhonghui Wang
- State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fuzhou 350002, China
| | - Jia Zhao
- State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fuzhou 350002, China
| | - Qiang Wan
- State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fuzhou 350002, China
| | - Sen Lin
- State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fuzhou 350002, China
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Zhao J, Zhao Y, He H, Zhou P, Liang Y, Frauenheim T. Stacking Engineering: A Boosting Strategy for 2D Photocatalysts. J Phys Chem Lett 2021; 12:10190-10196. [PMID: 34644080 DOI: 10.1021/acs.jpclett.1c03089] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
Two-dimensional (2D) photocatalytic material is a vital project for modern solar energy conversion and storage. Despite a vast family of potential 2D photocatalysts that is demonstrated, their commercial applications are severely limited because of fast photogenerated electron-hole recombination. Here, based on first-principles, we propose a general paradigm to boost the separation of photoexcited charge carriers in 2D photocatalysts by stacking engineering. Taking the emerging water splitting photocatalyst MoSi2N4 as an example, we show that specific interlayer stacking-induced electric polarization plays a significant role in altering the electronic properties and thus the suppressed recombination rate of photoexcited carriers. Moreover, we find that the catalytic performance can be further controlled by vertical strain. These generalized findings not only highlight the importance of stacking-induced electric polarization but also offer new prospects for the design and application of 2D photocatalysts.
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Affiliation(s)
- Jinfeng Zhao
- Institute of Molecular Sciences and Engineering, Institute of Frontier and Interdisciplinary Science, Shandong University, Qingdao 266237, China
| | - Yanliang Zhao
- Institute of Molecular Sciences and Engineering, Institute of Frontier and Interdisciplinary Science, Shandong University, Qingdao 266237, China
| | - Huijie He
- Institute of Molecular Sciences and Engineering, Institute of Frontier and Interdisciplinary Science, Shandong University, Qingdao 266237, China
| | - Panwang Zhou
- Institute of Molecular Sciences and Engineering, Institute of Frontier and Interdisciplinary Science, Shandong University, Qingdao 266237, China
| | - Yan Liang
- Bremen Center for Computational Materials Science, University of Bremen, 28359 Bremen, Germany
| | - Thomas Frauenheim
- Bremen Center for Computational Materials Science, University of Bremen, 28359 Bremen, Germany
- Beijing Computational Science Research Center, 100193 Beijing, P.R. China
- Shenzhen JL Computational Science and Applied Research Institute, 518109 Shenzhen, P.R. China
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