Strain, Doping, and Electronic Transport of Large Area Monolayer MoS2 Exfoliated on Gold and Transferred to an Insulating Substrate

Disentangling doping and strain effects at defects of grown MoS2 monolayers with nano-optical spectroscopy

The role of defects in two-dimensional semiconductors and how they affect the intrinsic properties of these materials have been a widely researched topic over the past few decades. Optical characterization techniques such as photoluminescence and Raman spectroscopies are important tools to probe the physical properties of semiconductors and the impact of defects. However, confocal optical techniques present a spatial resolution limitation lying in a μm-scale, which can be overcome by the use of near-field optical measurements. Here, we use tip-enhanced photoluminescence and Raman spectroscopies to unveil the nanoscale optical properties of grown MoS2 monolayers, revealing that the impact of doping and strain can be disentangled by the combination of both techniques. A noticeable enhancement of the exciton peak intensity corresponding to trion emission quenching is observed at narrow regions down to a width of 47 nm at grain boundaries related to doping effects. Besides, localized strain fields inside the sample lead to non-uniformities in the intensity and energy position of photoluminescence peaks. Finally, two distinct MoS2 samples present different nano-optical responses at their edges associated with opposite strains. The edge of the first sample shows a photoluminescence intensity enhancement and energy blueshift corresponding to a frequency blueshift for E2g and 2LA Raman modes. In contrast, the other sample displays a photoluminescence energy redshift and frequency red shifts for E2g and 2LA Raman modes at their edges. Our work highlights the potential of combining tip-enhanced photoluminescence and Raman spectroscopies to probe localized strain fields and doping effects related to defects in two-dimensional materials.

Molecular dynamics simulation-based study to analyse the properties of entrapped water between gold and graphene 2D interfaces

Heterostructures based on graphene and other 2D materials have received significant attention in recent years. However, it is challenging to fabricate them with an ultra-clean interface due to unwanted foreign molecules, which usually get introduced during their transfer to a desired substrate. Clean nanofabrication is critical for the utilization of these materials in 2D nanoelectronics devices and circuits, and therefore, it is important to understand the influence of the "non-ideal" interface. Inspired by the wet-transfer process of the CVD-grown graphene, herein, we present an atomistic simulation of the graphene-Au interface, where water molecules often get trapped during the transfer process. By using molecular dynamics (MD) simulations, we investigated the structural variations of the trapped water and the traction-separation curve derived from the graphene-Au interface at 300 K. We observed the formation of an ice-like structure with square-ice patterns when the thickness of the water film was <5 Å. This could cause undesirable strain in the graphene layer and hence affect the performance of devices developed from it. We also observed that at higher thicknesses the water film is predominantly present in the liquid state. The traction separation curve showed that the adhesion of graphene is better in the presence of an ice-like structure. This study explains the behaviour of water confined at the nanoscale region and advances our understanding of the graphene-Au interface in 2D nanoelectronics devices and circuits.

Analysis of p-Type Doping in Graphene Induced by Monolayer-Oxidized TMDs

Doping is one of the most difficult technological challenges for realizing reliable two-dimensional (2D) material-based semiconductor devices, arising from their ultrathinness. Here, we systematically investigate the impact of different types of nonstoichiometric solid MOx (M are W or Mo) dopants obtained by oxidizing transition metal dichalcogenides (TMDs: WSe2 or MoS2) formed on graphene FETs, which results in p-type doping along with disorders. From the results obtained in this study, we were able to suggest an analytical technique to optimize the optimal UV-ozone (UVO) treatment to achieve high p-type doping concentration in graphene FETs (∼2.5 × 1013 cm-2 in this study) without generating defects, mainly by analyzing the time dependency of D and D' peaks measured by Raman spectroscopy. Furthermore, an analysis of the structure of graphene sheets using TEM indicates that WOx plays a better protective role in graphene, compared to MoOx, suggesting that WOx is more effective for preventing the degradation of graphene during UVO treatment. To enhance the practical application aspect of our work, we have fabricated a graphene photodetector by selectively doping the graphene through oxidized TMDs, creating a p-n junction, which resulted in improved photoresponsivity compared to the intrinsic graphene device. Our results offer a practical guideline for the utilization of surface charge transfer doping of graphene toward CMOS applications.

Tailored Synthesis of Heterogenous 2D TMDs and Their Spectroscopic Characterization

Two-dimensional (2D) vertical van der Waals heterostructures (vdWHs) show great potential across various applications. However, synthesizing large-scale structures poses challenges owing to the intricate growth parameters, forming unexpected hybrid film structures. Thus, precision in synthesis and thorough structural analysis are essential aspects. In this study, we successfully synthesized large-scale structured 2D transition metal dichalcogenides (TMDs) via chemical vapor deposition using metal oxide (WO3 and MoO3) thin films and a diluted H2S precursor, individual MoS2, WS2 films and various MoS2/WS2 hybrid films (Type I: MoxW1-xS2 alloy; Type II: MoS2/WS2 vdWH; Type III: MoS2 dots/WS2). Structural analyses, including optical microscopy, Raman spectroscopy, transmission electron microscopy (TEM) with energy-dispersive X-ray spectroscopy, and cross-sectional imaging revealed that the A1g and E2g modes of WS2 and MoS2 were sensitive to structural variations, enabling hybrid structure differentiation. Type II showed minimal changes in the MoS2's A1g mode, while Types I and III exhibited a ~2.8 cm-1 blue shift. Furthermore, the A1g mode of WS2 in Type I displayed a 1.4 cm-1 red shift. These variations agreed with the TEM-observed microstructural features, demonstrating strain effects on the MoS2-WS2 interfaces. Our study provides insights into the structural features of diverse hybrid TMD materials, facilitating their differentiation through Raman spectroscopy.

Direct Characterization of Buried Interfaces in 2D/3D Heterostructures Enabled by GeO2 Release Layer

Inconsistent interface control in devices based on two-dimensional materials (2DMs) has limited technological maturation. Astounding variability of 2D/three-dimensional (2D/3D) interface properties has been reported, which has been exacerbated by the lack of direct investigations of buried interfaces commonly found in devices. Herein, we demonstrate a new process that enables the assembly and isolation of device-relevant heterostructures for buried interface characterization. This is achieved by implementing a water-soluble substrate (GeO2), which enables deposition of many materials onto the 2DM and subsequent heterostructure release by dissolving the GeO2 substrate. Here, we utilize this novel approach to compare how the chemistry, doping, and strain in monolayer MoS2 heterostructures fabricated by direct deposition vary from those fabricated by transfer techniques to show how interface properties differ with the heterostructure fabrication method. Direct deposition of thick Ni and Ti films is found to react with the monolayer MoS2. These interface reactions convert 50% of MoS2 into intermetallic species, which greatly exceeds the 10% conversion reported previously and 0% observed in transfer-fabricated heterostructures. We also measure notable differences in MoS2 carrier concentration depending on the heterostructure fabrication method. Direct deposition of thick Au, Ni, and Al2O3 films onto MoS2 increases the hole concentration by >1012 cm-2 compared to heterostructures fabricated by transferring MoS2 onto these materials. Thus, we demonstrate a universal method to fabricate 2D/3D heterostructures and expose buried interfaces for direct characterization.

Investigation of Interface Interactions Between Monolayer MoS2 and Metals: Implications on Strain and Surface Roughness

Achieving a low contact resistance has been an important issue in the design of two-dimensional (2D) semiconductor-metal interfaces. The metal contact resistance is dominated by interfacial interactions. Here, we systematically investigate 2D semiconductor-metal interfaces formed by transferring monolayer MoS2 onto prefabricated metal surfaces, such as Au and Pd, using X-ray photoelectron spectroscopy (XPS), atomic force microscopy, and Raman spectroscopy. In contrast to the MoS2/HOPG interface, the interfaces of MoS2/Au and MoS2/Pd feature the formation of weak covalent bonds. The XPS spectra reveal distinct peak positions for S-Au and S-Pd, indicating a higher doping concentration at the S-Au interface. This difference is a key factor in understanding the electronic interactions at the metal-MoS2 interfaces. Additionally, we observe that the metal surface roughness is a critical determinant of the adhesion behavior of transferred monolayer MoS2, resulting in different strains and doping concentrations. The strain on transferred MoS2 increases with an increase in substrate roughness. However, the strain is released when the roughness of metal surface surpasses a certain threshold. The dependence of the contact material and the influence of the substrate roughness on the contact interface provide critical information for improving 2D semiconductor-metal contacts and device performance.

Interface Properties of MoS2 van der Waals Heterojunctions with GaN

The combination of the unique physical properties of molybdenum disulfide (MoS2) with those of gallium nitride (GaN) and related group-III nitride semiconductors have recently attracted increasing scientific interest for the realization of innovative electronic and optoelectronic devices. A deep understanding of MoS2/GaN interface properties represents the key to properly tailor the electronic and optical behavior of devices based on this heterostructure. In this study, monolayer (1L) MoS2 was grown on GaN-on-sapphire substrates by chemical vapor deposition (CVD) at 700 °C. The structural, chemical, vibrational, and light emission properties of the MoS2/GaN heterostructure were investigated in detail by the combination of microscopic/spectroscopic techniques and ab initio calculations. XPS analyses on as-grown samples showed the formation of stoichiometric MoS2. According to micro-Raman spectroscopy, monolayer MoS2 domains on GaN exhibit an average n-type doping of (0.11 ± 0.12) × 1013 cm-2 and a small tensile strain (ε ≈ 0.25%), whereas an intense light emission at 1.87 eV was revealed by PL analyses. Furthermore, a gap at the interface was shown by cross-sectional TEM analysis, confirming the van der Waals (vdW) bond between MoS2 and GaN. Finally, density functional theory (DFT) calculations of the heterostructure were carried out, considering three different configurations of the interface, i.e., (i) an ideal Ga-terminated GaN surface, (ii) the passivation of Ga surface by a monolayer of oxygen (O), and (iii) the presence of an ultrathin Ga2O3 layer. This latter model predicts the formation of a vdW interface and a strong n-type doping of MoS2, in closer agreement with the experimental observations.

Substrate Engineering for Chemical Vapor Deposition Growth of Large-Scale 2D Transition Metal Dichalcogenides

The large-scale production of 2D transition metal dichalcogenides (TMDs) is essential to realize their industrial applications. Chemical vapor deposition (CVD) has been considered as a promising method for the controlled growth of high-quality and large-scale 2D TMDs. During a CVD process, the substrate plays a crucial role in anchoring the source materials, promoting the nucleation and stimulating the epitaxial growth. It thus significantly affects the thickness, microstructure, and crystal quality of the products, which are particularly important for obtaining 2D TMDs with expected morphology and size. Here, an insightful review is provided by focusing on the recent development associated with the substrate engineering strategies for CVD preparation of large-scale 2D TMDs. First, the interaction between 2D TMDs and substrates, a key factor for the growth of high-quality materials, is systematically discussed by combining the latest theoretical calculations. Based on this, the effect of various substrate engineering approaches on the growth of large-area 2D TMDs is summarized in detail. Finally, the opportunities and challenges of substrate engineering for the future development of 2D TMDs are discussed. This review might provide deep insight into the controllable growth of high-quality 2D TMDs toward their industrial-scale practical applications.

Large-scale and stacked transfer of bilayers MoS2devices on a flexible polyimide substrate

Two-dimensional transition metal dichalcogenides (TMDs), as flexible and stretchable materials, have attracted considerable attention in the field of novel flexible electronics due to their excellent mechanical, optical, and electronic properties. Among the various TMD materials, atomically thin MoS2has become the most widely used material due to its advantageous properties, such as its adjustable bandgap, excellent performance, and ease of preparation. In this work, we demonstrated the practicality of a stacked wafer-scale two-layer MoS2film obtained by transferring multiple single-layer films grown using chemical vapor deposition. The MoS2field-effect transistor cell had a top-gated device structure with a (PI) film as the substrate, which exhibited a high on/off ratio (108), large average mobility (∼8.56 cm2V-1s-1), and exceptional uniformity. Furthermore, a range of flexible integrated logic devices, including inverters, NOR gates, and NAND gates, were successfully implemented via traditional lithography. These results highlight the immense potential of TMD materials, particularly MoS2, in enabling advanced flexible electronic and optoelectronic devices, which pave the way for transformative applications in future-generation electronics.

A resistance-driven H2 gas sensor: high-entropy alloy nanoparticles decorated 2D MoS2

The need to use hydrogen (H2) gas has increasingly become important due to the growing demand for carbon-free energy sources. However, the explosive nature of H2 gas has raised significant safety concerns, driving the development of efficient and reliable detection. Although 2D materials have emerged as promising materials for hydrogen gas sensing applications due to their relatively high sensitivity, the incorporation of other nanomaterials into 2D materials can drastically improve both the selectivity and the sensitivity of sensors. In this work, high-entropy alloy nanoparticles using non-noble metals were used to develop a sensor for H2 gas detection. This chemical sensor was realized by decorating 2D MoS2 surfaces with multicomponent body-centered cubic (BCC) equiatomic Ti-Zr-V-Nb-Hf high-entropy alloy (HEA) nanoparticles. It was selective towards H2, over NH3, H2S, CH4, and C4H10, demonstrating widespread applications of this sensor. To understand the mechanisms behind the abnormal selectivity and sensitivity, density functional theory (DFT) calculations were performed, showing that the HEA nanoparticles can act as a chemical hub for H2 adsorption and dissociation, ultimately improving the performance of 2D material-based gas sensors.

Plasmon-exciton couplings in the MoS2/AuNP plasmonic hybrid structure

The understanding and engineering of the plasmon-exciton coupling are necessary to control the innovative optoelectronic device platform. In this study, we investigated the intertwined mechanism of each plasmon-exciton couplings in monolayer molybdenum disulfide (MoS₂) and plasmonic hybrid structure. The results of absorption, simulation, electrostatics, and emission spectra show that interaction between photoexcited carrier and exciton modes are successfully coupled by energy transfer and exciton recombination processes. Especially, neutral exciton, trion, and biexciton can be selectively enhanced by designing the plasmonic hybrid platform. All of these results imply that there is another degree of freedom to control the individual enhancement of each exciton mode in the development of nano optoelectronic devices.

Enhancing and Broadening the Photoresponse of Monolayer MoS2 Based on Au Nanoslit Array

Two-dimensional molybdenum disulfide (MoS₂), featuring unique optoelectronic properties, has attracted tremendous interest in developing novel photodetection devices. However, the limited light absorption and small carrier transport rate of the monolayer MoS₂ result in low photoresponse, and the large band gap limits its detection range in the visible region. In this study, we propose a nanoslit array-MoS₂ hybrid device architecture with enhanced and broadened photoresponse. The nanoslit array can localize free-space light to achieve strong interactions with MoS₂, and acts as the channel to improve charge transport. As a result, the Au nanoslit array-MoS₂ hybrid detector exhibits a nearly 100-fold increase in photocurrent compared to the pure MoS₂ device. More importantly, the hybrid device can broaden the photoresponse to the optical communication band of 1550 nm which is lower than the band gap of MoS₂, by efficiently utilizing the hot carriers generated by the Au nanoslits. The experimental results are supported by both theoretical analysis and numerical simulation. Since our demonstration leverages the engineering of the hybrid photodetectors with metal nanostructures rather than semiconductor materials, it should be universal and applicable to other devices for broadband, high-efficiency photoelectric conversion.

Electrostatic control of photoluminescence from A and B excitons in monolayer molybdenum disulfide

Tailoring excitonic photoluminescence (PL) in molybdenum disulfide (MoS₂) is critical for its various applications. Although significant efforts have been devoted to enhancing the PL intensity of monolayer MoS₂, simultaneous tailoring of emission from both A excitons and B excitons remains largely unexplored. Here, we demonstrate that both A-excitonic and B-excitonic PL of chemical vapor deposition (CVD)-grown monolayer MoS₂ can be tuned by electrostatic doping in air. Our results indicate that the B-excitonic PL changed in the opposite direction compared to A-excitonic PL when a gate voltage (V _g) was applied, both in S-rich and Mo-rich monolayer MoS₂. Through the combination of gas adsorption and electrostatic doping, a 12-fold enhancement of the PL intensity for A excitons in Mo-rich monolayer MoS₂ was achieved at V _g = -40 V, and a 26-fold enhancement for the ratio of B/A excitonic PL was observed at V _g = +40 V. Our results demonstrate not only the control of the conversion between A⁰ and A^-, but also the modulation of intravalley and intervalley conversion between A excitons and B excitons. With electrostatic electron doping, the population of B excitons can be promoted due to the enhanced intravalley and intervalley transition process through electron-phonon coupling. The electrostatic control of excitonic PL has potential applications in exciton physics and valleytronics involving the B excitons.

Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization

In this paper, we report a multiscale investigation of the compositional, morphological, structural, electrical, and optical emission properties of 2H-MoS2 obtained by sulfurization at 800 °C of very thin MoO3 films (with thickness ranging from ~2.8 nm to ~4.2 nm) on a SiO2/Si substrate. XPS analyses confirmed that the sulfurization was very effective in the reduction of the oxide to MoS2, with only a small percentage of residual MoO3 present in the final film. High-resolution TEM/STEM analyses revealed the formation of few (i.e., 2-3 layers) of MoS2 nearly aligned with the SiO2 surface in the case of the thinnest (~2.8 nm) MoO3 film, whereas multilayers of MoS2 partially standing up with respect to the substrate were observed for the ~4.2 nm one. Such different configurations indicate the prevalence of different mechanisms (i.e., vapour-solid surface reaction or S diffusion within the film) as a function of the thickness. The uniform thickness distribution of the few-layer and multilayer MoS2 was confirmed by Raman mapping. Furthermore, the correlative plot of the characteristic A1g-E2g Raman modes revealed a compressive strain (ε ≈ -0.78 ± 0.18%) and the coexistence of n- and p-type doped areas in the few-layer MoS2 on SiO2, where the p-type doping is probably due to the presence of residual MoO3. Nanoscale resolution current mapping by C-AFM showed local inhomogeneities in the conductivity of the few-layer MoS2, which are well correlated to the lateral changes in the strain detected by Raman. Finally, characteristic spectroscopic signatures of the defects/disorder in MoS2 films produced by sulfurization were identified by a comparative analysis of Raman and photoluminescence (PL) spectra with CVD grown MoS2 flakes.

Self-Limiting Opto-Electrochemical Thinning of Transition-Metal Dichalcogenides

Two-dimensional monolayer and few-layer transition-metal dichalcogenides (TMDs) are promising for advanced electronic and photonic applications due to their extraordinary optoelectronic and mechanical properties. However, it has remained challenging to produce high-quality TMD thin films with controlled thickness and desired micropatterns, which are essential for their practical implementation in functional devices. In this work, a self-limiting opto-electrochemical thinning (sOET) technique is developed for on-demand thinning and patterning of TMD flakes at high efficiency. Benefiting from optically enhanced electrochemical reactions, sOET features a low operational optical power density of down to 70 μW μm^-2 to avoid photodamage and thermal damage to the thinned TMD flakes. Through selective optical excitation with different laser wavelengths based on the thickness-dependent band gaps of TMD materials, sOET enables precise control over the final thickness of TMD flakes. With the capability of thickness control and site-specific patterning, our sOET offers an effective route to fabricating high-quality TMD materials for a broad range of applications in nanoelectronics, nanomechanics, and nanophotonics.

Multi-scale modeling of 2D GaSe FETs with strained channels

Electronic devices based on bidimensional materials (2DMs) are the subject of an intense experimental research, that demands a tantamount theoretical activity. The latter must be hold up by a varied set of tools able to rationalize, explain and predict the operation principles of the devices. However, in the broad context of multi-scale computational nanoelectronics, there is currently a lack of simulation tools connecting atomistic descriptions with semi-classical mesoscopic device-level simulations and able to properly explain the performance of many state-of-the-art devices. To contribute to filling this gap we present a multi-scale approach that combines fine-level material calculations with a semi-classical drift-diffusion transport model. Its use is exemplified by assessing 2DM field effect transistors with strained channels, showing excellent capabilities to capture the changes in the crystal structure and their impact into the device performance. Interestingly, we verify the capacity of strain in monolayer GaSe to enhance the conduction of one type of carrier, enabling the possibility to mimic the effect of chemical doping on 2D materials. These results illustrate the great potential of the proposed approach to bridge levels of abstraction rarely connected before and thus contribute to the theoretical modeling of state-of-the-art 2DM-based devices.

Substrate-Driven Atomic Layer Deposition of High-κ Dielectrics on 2D Materials

Atomic layer deposition (ALD) of high-κ dielectrics on two-dimensional (2D) materials (including graphene and transition metal dichalcogenides) still represents a challenge due to the lack of out-of-plane bonds on the pristine surfaces of 2D materials, thus making the nucleation process highly disadvantaged. The typical methods to promote the nucleation (i.e., the predeposition of seed layers or the surface activation via chemical treatments) certainly improve the ALD growth but can affect, to some extent, the electronic properties of 2D materials and the interface with high-κ dielectrics. Hence, direct ALD on 2D materials without seed and functionalization layers remains highly desirable. In this context, a crucial role can be played by the interaction with the substrate supporting the 2D membrane. In particular, metallic substrates such as copper or gold have been found to enhance the ALD nucleation of Al2O3 and HfO2 both on monolayer (1 L) graphene and MoS2. Similarly, uniform ALD growth of Al2O3 on the surface of 1 L epitaxial graphene (EG) on SiC (0001) has been ascribed to the peculiar EG/SiC interface properties. This review provides a detailed discussion of the substrate-driven ALD growth of high-κ dielectrics on 2D materials, mainly on graphene and MoS2. The nucleation mechanism and the influence of the ALD parameters (namely the ALD temperature and cycle number) on the coverage as well as the structural and electrical properties of the deposited high-κ thin films are described. Finally, the open challenges for applications are discussed.