Highly Dense and Stable p-Type Thin-Film Transistor Based on Atomic Layer Deposition SnO Fabricated by Two-Step Crystallization

Low-Voltage Solution-Processed Zinc-Doped CuI Thin Film Transistors with NOR Logic and Artificial Synaptic Function

Low-voltage Zn-doped CuI thin film transistors (TFTs) gated by chitosan dielectric were fabricated at a low temperature. The Zn-doped CuI TFT exhibited a more superior on/off current ratio than CuI TFT due to the substitution or supplementation of copper vacancies by Zn ions. The Zn-doped CuI films were characterized by scanning electron microscope, X-ray diffraction, and X-ray photoelectron spectroscopy. The Zn-doped CuI TFTs exhibited an on/off current ratio of 1.58 × 104, a subthreshold swing of 70 mV/decade, and a field effect mobility of 0.40 cm2V-1s-1, demonstrating good operational stability. Due to the electric-double-layer (EDL) effect and high specific capacitance (17.3 μF/cm2) of chitosan gate dielectric, Zn-doped CuI TFT operates at a voltage below -2 V. The threshold voltage is -0.2 V. In particular, we have prepared Zn-doped CuI TFTs with two in-plane gates and NOR logic operation is implemented on such TFTs. In addition, using the ion relaxation effect and EDL effect of chitosan film, a simple pain neuron simulation is realized on such a p-type TFTs for the first time through the bottom gate to regulate the carrier transport of the channel. This p-type device has promising applications in low-cost electronic devices, complementary electronic circuit, and biosensors.

Atmospheric-pressure atomic layer deposition: recent applications and new emerging applications in high-porosity/3D materials

Atomic layer deposition (ALD) is a widely recognized technique for depositing ultrathin conformal films with excellent thickness control at Ångström or (sub)monolayer level. Atmospheric-pressure ALD is an upcoming ALD process with a potentially lower ownership cost of the reactor. In this review, we provide a comprehensive overview of the recent applications and development of ALD approaches emphasizing those based on operation at atmospheric pressure. Each application determines its own specific reactor design. Spatial ALD (s-ALD) has been recently introduced for the commercial production of large-area 2D displays, the surface passivation and encapsulation of solar cells and organic light-emitting diode (OLED) displays. Atmospheric temporal ALD (t-ALD) has opened up new emerging applications such as high-porosity particle coatings, functionalization of capillary columns for gas chromatography, and membrane modification in water treatment and gas purification. The challenges and opportunities for highly conformal coating on porous substrates by atmospheric ALD have been identified. We discuss in particular the pros and cons of both s-ALD and t-ALD in combination with their reactor designs in relation to the coating of 3D and high-porosity materials.

Room-Temperature Fabrication of p-Type SnO Semiconductors Using Ion-Beam-Assisted Deposition

Over the past decade, SnO has been considered a promising p-type oxide semiconductor. However, achieving high mobility in the fabrication of p-type SnO films is still highly dependent on the post-annealing procedure, which is often used to make SnO, due to its metastable nature, readily convertible to SnO₂ and/or intermediate phases. This paper demonstrates a fully room-temperature fabrication of p-type SnO_x thin films using ion-beam-assisted deposition. This technique offers independent control between ion density, via the ion-gun anode current and oxygen flow rate, and ion energy, via the ion-gun anode voltage, thus being able to optimize the optical band gap and the hole mobility of the SnO films to reach 2.70 eV and 7.89 cm² V^-1 s^-1, respectively, without the need for annealing. Remarkably, this is the highest mobility reported for p-type SnO films whose fabrication was carried out entirely at room temperature. Using first-principles calculations, we rationalize that the high mobility is associated with the fine-tuning of the Sn-rich-related defects and lattice densification, obtained by controlling the density and energy of the oxygen ions, both of which optimize the spatial overlap of the valence bands to form a continuous conduction path for the holes. Moreover, due to the absence of the annealing process, the Raman spectra reveal no significant signatures of microcrystal formation in the films. This behavior contrasts with the case involving the air-annealing procedure, where a complex interaction occurs between the formation of SnO microcrystals and the formation of SnO_x intermediate phases. This interplay results in variations in grain texture within the film, leading to a lower optimum Hall mobility of only 5.17 cm² V^-1 s^-1. Finally, we demonstrate the rectification characteristics of all-fabricated-at-room-temperature SnO_x-based p-n devices to confirm the viability of the p-type SnO_x films.

Vertically Integrated Electronics: New Opportunities from Emerging Materials and Devices

Vertical three-dimensional (3D) integration is a highly attractive strategy to integrate a large number of transistor devices per unit area. This approach has emerged to accommodate the higher demand of data processing capability and to circumvent the scaling limitation. A huge number of research efforts have been attempted to demonstrate vertically stacked electronics in the last two decades. In this review, we revisit materials and devices for the vertically integrated electronics with an emphasis on the emerging semiconductor materials that can be processable by bottom-up fabrication methods, which are suitable for future flexible and wearable electronics. The vertically stacked integrated circuits are reviewed based on the semiconductor materials: organic semiconductors, carbon nanotubes, metal oxide semiconductors, and atomically thin two-dimensional materials including transition metal dichalcogenides. The features, device performance, and fabrication methods for 3D integration of the transistor based on each semiconductor are discussed. Moreover, we highlight recent advances that can be important milestones in the vertically integrated electronics including advanced integrated circuits, sensors, and display systems. There are remaining challenges to overcome; however, we believe that the vertical 3D integration based on emerging semiconductor materials and devices can be a promising strategy for future electronics.

Enhanced performance of p-type SnOxthin film transistors through defect compensation

Due to the unique outermost orbitals of Sn, hole carriers in tin monoxide (SnO) possess small effective mass and high mobility among oxide semiconductors, making it a promising p-channel material for thin film field-effect transistors (TFTs). However, the Sn vacancy induced field-effect mobility deterioration and threshold voltage (V_th) shift in experiments greatly limit its application in complementary metal-oxide-semiconductor (CMOS) transistors. In this study, the internal mechanism of vacancy defect compensation by aluminum (Al) doping in SnO_xfilm is studied combining experiments with the density functional theory (DFT). The doping is achieved by an argon (Ar) plasma treatment of Al₂O₃deposited onto the SnO_xfilm, in which the Al₂O₃provides both the surface passivation and Al doping source. Experimental results show a wideV_thmodulation range (6.08 to -19.77 V) and notable mobility enhancement (11.56 cm²V^-1s^-1) in the SnO_xTFTs after the Al doping by Ar plasma. DFT results reveal that the most possible positions of Al in SnO and SnO₂segments are the compensation to Sn vacancy and interstitial. The compensation will create an n-type doping effect and improve the hole carrier transport by reducing the hole effective mass (m_h*), which is responsible for the device performance variation, while the interstitial in the SnO₂segment can hardly affect the valence transport of the film. The defect compensation is suitable for the electronic property modulation of SnO towards the high-performance CMOS application.

Research Progress of p-Type Oxide Thin-Film Transistors

The development of transparent electronics has advanced metal–oxide–semiconductor Thin-Film transistor (TFT) technology. In the field of flat-panel displays, as basic units, TFTs play an important role in achieving high speed, brightness, and screen contrast ratio to display information by controlling liquid crystal pixel dots. Oxide TFTs have gradually replaced silicon-based TFTs owing to their field-effect mobility, stability, and responsiveness. In the market, n-type oxide TFTs have been widely used, and their preparation methods have been gradually refined; however, p-Type oxide TFTs with the same properties are difficult to obtain. Fabricating p-Type oxide TFTs with the same performance as n-type oxide TFTs can ensure more energy-efficient complementary electronics and better transparent display applications. This paper summarizes the basic understanding of the structure and performance of the p-Type oxide TFTs, expounding the research progress and challenges of oxide transistors. The microstructures of the three types of p-Type oxides and significant efforts to improve the performance of oxide TFTs are highlighted. Finally, the latest progress and prospects of oxide TFTs based on p-Type oxide semiconductors and other p-Type semiconductor electronic devices are discussed.

Facile synthesis of an organic/inorganic hybrid 2D structure tincone film by molecular layer deposition

Organic/inorganic hybrid tincone films were deposited by molecular layer deposition (MLD) using N,N'-tert-butyl-1,1-dimethylethylenediamine stannylene(II) as a precursor and hydroquinone (HQ) as an organic reactant. From previous studies it is known that SnO can be fabricated through a reaction with H₂O, which has low oxidizing power. Similarly, when combined with HQ having a bi-functional hydroxyl group, SnO-based 2D hybrid tincones can be produced. In most aromatic ring-based metalcones described in previous studies, graphitization by pyrolysis occurred during post-annealing. In this study of tincones fabricated with a divalent precursor after a vacuum post-annealing process, the structural rearrangement of the SnO and the benzene ring bonds proceeded to form a SnO-based hybrid 2D structure. The rearrangement of the resulting structure occurred through π-π stacking (without pyrolysis) of the benzene ring. To understand the mechanism of fabrication of 2D hybrid tincones by π-π stacking of the benzene ring and the increase of the crystallinity of SnO after the annealing process, the structural rearrangement was observed using X-ray photoelectron spectroscopy (XPS), grazing incidence X-ray diffraction (GIXRD), grazing-incidence wide-angle X-ray scattering (GIWAXS), and Raman spectroscopy. Thereafter, the design of the crystal structure was investigated.

Tin(II) Ureide Complexes: Synthesis, Structural Chemistry, and Evaluation as SnO Precursors

In an attempt to tailor precursors for application in the deposition of phase pure SnO, we have evaluated a series of tin (1-6) ureide complexes. The complexes were successfully synthesized by employing N,N'-trialkyl-functionalized ureide ligands, in which features such as stability, volatility, and decomposition could be modified with variation of the substituents on the ureide ligand in an attempt to find the complex with the ideal electronic, steric, or coordinative properties, which determine the fate of the final products. The tin(II) ureide complexes 1-6 were synthesized by direct reaction [Sn{NMe₂}₂] with aryl and alkyl isocyanates in a 1:2 molar ratio. All the complexes were characterized by NMR spectroscopy as well as elemental analysis and, where applicable, thermogravimetric (TG) analysis. The single-crystal X-ray diffraction studies of 2, 3, 4, and 6 revealed that the complexes crystallize in the monoclinic space group P2(1)/n (2 and 4) or in the triclinic space group P-1 (3 and 6) as monomers. Reaction with phenyl isocyanate results in the formation of the bimetallic species 5, which crystallizes in the triclinic space group P-1, a consequence of incomplete insertion into the Sn-NMe₂ bonds, versus mesityl isocyanate, which produces a monomeric double insertion product, 6, under the same conditions, indicating a difference in reactivity between phenyl isocyanate and mesityl isocyanate with respect to insertion into Sn-NMe₂ bonds. The metal centers in these complexes are all four-coordinate, displaying either distorted trigonal bipyramidal or trigonal bipyramidal geometries. The steric influence of the imido-ligand substituent has a clear effect on the coordination mode of the ureide ligands, with complexes 2 and 6, which contain the cyclohexyl and mesityl ligands, displaying κ²-O,N coordination modes, whereas κ²-N,N' coordination modes are observed for the sterically bulkier tert-butyl and adamantyl derivatives, 3 and 4. The thermogravimetric analysis of the complexes 3 and 4 exhibited excellent physicochemical properties with clean single-step curves and low residual masses in their TG analyses suggesting their potential utility of these systems as MOCVD and ALD precursors.