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Chen X, Li H, Wang L, Wang Z, Liu S, Li G, Wang C, Li X, Zhu H, Wang Y, Zhang X, Liu Y. Revealing oxygen effect on efficiency and stability of quantum dot photovoltaics. J Colloid Interface Sci 2024; 676:417-424. [PMID: 39033676 DOI: 10.1016/j.jcis.2024.07.137] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/11/2024] [Revised: 07/11/2024] [Accepted: 07/16/2024] [Indexed: 07/23/2024]
Abstract
Colloidal quantum dot solar cells (CQDSCs) have received great attention in the development of scalable and stable photovoltaic devices. Despite the high power-conversion-efficiency (PCE) reported, stability investigations are still limited and the exact degradation mechanisms of CQDSCs remain unclear under different atmosphere conditions. In this study, the atmospheric influence on the ZnO electron transport layer material (ETL), halide-passivated lead sulfide CQDs (PbS-PbI2) photoactive layer material and 1,2-ethanedithiol-PbS CQDs (PbS-EDT) hole transport material on device stability in PbS CQDSCs is investigated. It was found that O2 had negligible influence on PbS-PbI2, but it did induce the increase in work function of ZnO ETL and PbS-EDT layers. Notably, the increase of the ZnO work function (WFZnO) induces the formation of interface barrier between ZnO and PbS-PbI2, leading to a deterioration in device efficiency. By further replacing ZnO ETL with SnO2, a multi-interface collaborative CQDSC was constructed to realize the PCE with high stability. This study identifies the efficiency evolution that is inherent in CQDSCs under different atmospheric conditions.
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Affiliation(s)
- Xiangshan Chen
- Key Laboratory of UV-Emitting Materials and Technology of Chinese Ministry of Education, Northeast Normal University, Changchun 130024, China
| | - Hao Li
- Key Laboratory of UV-Emitting Materials and Technology of Chinese Ministry of Education, Northeast Normal University, Changchun 130024, China
| | - Lei Wang
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, Henan University, Kaifeng 475004, China
| | - Zihan Wang
- Key Laboratory of UV-Emitting Materials and Technology of Chinese Ministry of Education, Northeast Normal University, Changchun 130024, China
| | - Shuai Liu
- Key Laboratory of UV-Emitting Materials and Technology of Chinese Ministry of Education, Northeast Normal University, Changchun 130024, China
| | - Guodong Li
- Key Laboratory of UV-Emitting Materials and Technology of Chinese Ministry of Education, Northeast Normal University, Changchun 130024, China
| | - Chao Wang
- Key Laboratory of UV-Emitting Materials and Technology of Chinese Ministry of Education, Northeast Normal University, Changchun 130024, China
| | - Xiaofei Li
- Key Laboratory of UV-Emitting Materials and Technology of Chinese Ministry of Education, Northeast Normal University, Changchun 130024, China
| | - Hancheng Zhu
- Key Laboratory of UV-Emitting Materials and Technology of Chinese Ministry of Education, Northeast Normal University, Changchun 130024, China
| | - Yinglin Wang
- Key Laboratory of UV-Emitting Materials and Technology of Chinese Ministry of Education, Northeast Normal University, Changchun 130024, China.
| | - Xintong Zhang
- Key Laboratory of UV-Emitting Materials and Technology of Chinese Ministry of Education, Northeast Normal University, Changchun 130024, China.
| | - Yichun Liu
- Key Laboratory of UV-Emitting Materials and Technology of Chinese Ministry of Education, Northeast Normal University, Changchun 130024, China
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Chiu A, Lu C, Kachman DE, Rong E, Chintapalli SM, Lin Y, Khurgin D, Thon SM. Role of the ZnO electron transport layer in PbS colloidal quantum dot solar cell yield. NANOSCALE 2024; 16:8273-8285. [PMID: 38592692 DOI: 10.1039/d3nr06558h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/10/2024]
Abstract
The development of lead sulfide (PbS) colloidal quantum dot (CQD) solar cells has led to significant power conversion efficiency (PCE) improvements in recent years, with record efficiencies now over 15%. Many of the recent advances in improving PCE have focused on improving the interface between the PbS CQD active layer and the zinc oxide (ZnO) electron transport layer (ETL). Proper optimization of the ZnO ETL also increases yield, or the percentage of functioning devices per fabrication run. Simultaneous improvements in both PCE and yield will be critical as the field approaches commercialization. This review highlights recent advances in the synthesis of ZnO ETLs and discusses the impact and critical role of ZnO synthesis conditions on the PCE and yield of PbS CQD solar cells.
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Affiliation(s)
- Arlene Chiu
- Department of Electrical and Computer Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, Maryland, 21218, USA.
| | - Chengchangfeng Lu
- Department of Electrical and Computer Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, Maryland, 21218, USA.
| | - Dana E Kachman
- Department of Electrical and Computer Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, Maryland, 21218, USA.
| | - Eric Rong
- Department of Electrical and Computer Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, Maryland, 21218, USA.
| | - Sreyas M Chintapalli
- Department of Electrical and Computer Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, Maryland, 21218, USA.
| | - Yida Lin
- Department of Electrical and Computer Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, Maryland, 21218, USA.
| | - Daniel Khurgin
- Department of Electrical and Computer Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, Maryland, 21218, USA.
| | - Susanna M Thon
- Department of Electrical and Computer Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, Maryland, 21218, USA.
- Department of Materials Science and Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, Maryland, 21218, USA
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Song H, Yang J, Jeong WH, Lee J, Lee TH, Yoon JW, Lee H, Ramadan AJ, Oliver RDJ, Cho SC, Lim SG, Jang JW, Yu Z, Oh JT, Jung ED, Song MH, Park SH, Durrant JR, Snaith HJ, Lee SU, Lee BR, Choi H. A Universal Perovskite Nanocrystal Ink for High-Performance Optoelectronic Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209486. [PMID: 36496257 DOI: 10.1002/adma.202209486] [Citation(s) in RCA: 10] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/14/2022] [Revised: 11/22/2022] [Indexed: 06/17/2023]
Abstract
Semiconducting lead halide perovskite nanocrystals (PNCs) are regarded as promising candidates for next-generation optoelectronic devices due to their solution processability and outstanding optoelectronic properties. While the field of light-emitting diodes (LEDs) and photovoltaics (PVs), two prime examples of optoelectronic devices, has recently seen a multitude of efforts toward high-performance PNC-based devices, realizing both devices with high efficiencies and stabilities through a single PNC processing strategy has remained a challenge. In this work, diphenylpropylammonium (DPAI) surface ligands, found through a judicious ab-initio-based ligand search, are shown to provide a solution to this problem. The universal PNC ink with DPAI ligands presented here, prepared through a solution-phase ligand-exchange process, simultaneously allows single-step processed LED and PV devices with peak electroluminescence external quantum efficiency of 17.00% and power conversion efficiency of 14.92% (stabilized output 14.00%), respectively. It is revealed that a careful design of the aromatic rings such as in DPAI is the decisive factor in bestowing such high performances, ease of solution processing, and improved phase stability up to 120 days. This work illustrates the power of ligand design in producing PNC ink formulations for high-throughput production of optoelectronic devices; it also paves a path for "dual-mode" devices with both PV and LED functionalities.
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Affiliation(s)
- Hochan Song
- Department of Chemistry, Research Institute for Convergence of Basic Science, and Research Institute for Natural Sciences, Hanyang University, Seoul, 04763, South Korea
| | - Jonghee Yang
- Institute for Advanced Materials and Manufacturing, Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN, 37996, United States
| | - Woo Hyeon Jeong
- Department of Chemistry, Research Institute for Convergence of Basic Science, and Research Institute for Natural Sciences, Hanyang University, Seoul, 04763, South Korea
| | - Jeongjae Lee
- School of Earth and Environmental Sciences, Seoul National University, Seoul, 08826, South Korea
| | - Tack Ho Lee
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, London, W12 0BZ, United Kingdom
| | - Jung Won Yoon
- Department of Chemistry, Research Institute for Convergence of Basic Science, and Research Institute for Natural Sciences, Hanyang University, Seoul, 04763, South Korea
| | - Hajin Lee
- Department of Applied Chemistry, Center for Bionano Intelligence Education and Research, Hanyang Universitry, Ansan, 15588, South Korea
| | - Alexandra J Ramadan
- Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford, OX1 3PU, United Kingdom
| | - Robert D J Oliver
- Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford, OX1 3PU, United Kingdom
| | - Seong Chan Cho
- Department of Applied Chemistry, Center for Bionano Intelligence Education and Research, Hanyang Universitry, Ansan, 15588, South Korea
| | - Seul Gi Lim
- Department of Chemistry, Research Institute for Convergence of Basic Science, and Research Institute for Natural Sciences, Hanyang University, Seoul, 04763, South Korea
| | - Ji Won Jang
- Department of Chemistry, Research Institute for Convergence of Basic Science, and Research Institute for Natural Sciences, Hanyang University, Seoul, 04763, South Korea
| | - Zhongkai Yu
- Department of Physics, Pukyong National University, Busan, 48513, South Korea
| | - Jae Taek Oh
- Department of Chemistry, Research Institute for Convergence of Basic Science, and Research Institute for Natural Sciences, Hanyang University, Seoul, 04763, South Korea
| | - Eui Dae Jung
- Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 1A4, Canada
| | - Myoung Hoon Song
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, South Korea
| | - Sung Heum Park
- Department of Physics, Pukyong National University, Busan, 48513, South Korea
| | - James R Durrant
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, London, W12 0BZ, United Kingdom
- SPECIFIC IKE, College of Engineering, Swansea University, Swansea, SA2 7AX, United Kingdom
| | - Henry J Snaith
- Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford, OX1 3PU, United Kingdom
| | - Sang Uck Lee
- Department of Applied Chemistry, Center for Bionano Intelligence Education and Research, Hanyang Universitry, Ansan, 15588, South Korea
| | - Bo Ram Lee
- Department of Physics, Pukyong National University, Busan, 48513, South Korea
| | - Hyosung Choi
- Department of Chemistry, Research Institute for Convergence of Basic Science, and Research Institute for Natural Sciences, Hanyang University, Seoul, 04763, South Korea
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Chen M, Hao Q, Luo Y, Tang X. Mid-Infrared Intraband Photodetector via High Carrier Mobility HgSe Colloidal Quantum Dots. ACS NANO 2022; 16:11027-11035. [PMID: 35792103 DOI: 10.1021/acsnano.2c03631] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/17/2023]
Abstract
In this work, a room-temperature mixed-phase ligand exchange method is developed to obtain a relatively high carrier mobility (∼1 cm2/(V s)) on HgSe intraband colloidal quantum dot solids without any observable trap state. What is more, the doping from 1Se to 1Pe state in the conduction band could be precisely controlled by additional salts during this method, proved by optical and transport experiments. The high mobility and controllable doping benefit the mid-infrared photodetector utilizing the 1Se to 1Pe transition, with a 1000-fold improvement in response speed, which is several μs, a 55-fold increase in responsivity, which is 77 mA/W, and a 10-fold increase in specific detectivity, which is above 1.7 × 109 Jones at 80 K. The high-performance photodetector could serve as an intraband infrared camera for thermal imaging, as well as a CO2 gas sensor with a range from 0.25 to 2000 ppm.
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Affiliation(s)
- Menglu Chen
- School of Optics and Photonics, Beijing Institute of Technology, No. 5, Zhongguancun South Street, Beijing, 100081, China
- Beijing Key Laboratory for Precision Optoelectronic Measurement Instrument and Technology, Beijing, 100081, China
- Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing, 314000, China
| | - Qun Hao
- School of Optics and Photonics, Beijing Institute of Technology, No. 5, Zhongguancun South Street, Beijing, 100081, China
- Beijing Key Laboratory for Precision Optoelectronic Measurement Instrument and Technology, Beijing, 100081, China
- Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing, 314000, China
| | - Yuning Luo
- School of Optics and Photonics, Beijing Institute of Technology, No. 5, Zhongguancun South Street, Beijing, 100081, China
| | - Xin Tang
- School of Optics and Photonics, Beijing Institute of Technology, No. 5, Zhongguancun South Street, Beijing, 100081, China
- Beijing Key Laboratory for Precision Optoelectronic Measurement Instrument and Technology, Beijing, 100081, China
- Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing, 314000, China
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Yang J, Cho SC, Lee S, Yoon JW, Jeong WH, Song H, Oh JT, Lim SG, Bae SY, Lee BR, Ahmadi M, Sargent EH, Yi W, Lee SU, Choi H. Guanidinium-Pseudohalide Perovskite Interfaces Enable Surface Reconstruction of Colloidal Quantum Dots for Efficient and Stable Photovoltaics. ACS NANO 2022; 16:1649-1660. [PMID: 35025199 DOI: 10.1021/acsnano.1c10636] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Complete surface passivation of colloidal quantum dots (CQDs) and their strong electronic coupling are key factors toward high-performance CQD-based photovoltaics (CQDPVs). Also, the CQD matrices must be protected from oxidative environments, such as ambient air and moisture, to guarantee air-stable operation of the CQDPVs. Herein, we devise a complementary and effective approach to reconstruct the oxidized CQD surface using guanidinium and pseudohalide. Unlike conventional halides, thiocyanate anions provide better surface passivation with effective replacement of surface oxygen species and additional filling of defective sites, whereas guanidinium cations promote the construction of epitaxial perovskite bridges within the CQD matrix and augment electronic coupling. Additionally, we replace a defective 1,2-ethanedithiol-treated CQD hole transport layer (HTL) with robust polymeric HTLs, based on a judicious consideration of the energy level alignment established at the CQD/HTL interface. These efforts collectively result in high-performance and stable CQDPVs with photocurrents over 30 mA cm-2, ∼80% quantum efficiency at excitonic peaks and stable operation under humid and ambient conditions. Elucidation of carrier dynamics further reveals that interfacial recombination associated with band alignment governs both the CQDPV performance and stability.
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Affiliation(s)
- Jonghee Yang
- Institute for Advanced Materials and Manufacturing, Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Seong Chan Cho
- Department of Applied Chemistry, Center for Bionano Intelligence Education and Research, Hanyang University, Ansan 15588, Republic of Korea
| | - Seungjin Lee
- Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3G4, Canada
| | - Jung Won Yoon
- Department of Chemistry, Hanyang University, Seoul 04763, Republic of Korea
| | - Woo Hyeon Jeong
- Department of Chemistry, Hanyang University, Seoul 04763, Republic of Korea
| | - Hochan Song
- Department of Chemistry, Hanyang University, Seoul 04763, Republic of Korea
| | - Jae Taek Oh
- Department of Chemistry, Hanyang University, Seoul 04763, Republic of Korea
| | - Seul Gi Lim
- Department of Chemistry, Hanyang University, Seoul 04763, Republic of Korea
| | - Sung Yong Bae
- Department of Chemistry, Hanyang University, Seoul 04763, Republic of Korea
| | - Bo Ram Lee
- Department of Physics, Pukyong National University, Busan 48513, Republic of Korea
| | - Mahshid Ahmadi
- Institute for Advanced Materials and Manufacturing, Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Edward H Sargent
- Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3G4, Canada
| | - Whikun Yi
- Department of Chemistry, Hanyang University, Seoul 04763, Republic of Korea
- Research Institute for Natural Sciences, Hanyang University, Seoul 04763, Republic of Korea
| | - Sang Uck Lee
- Department of Applied Chemistry, Center for Bionano Intelligence Education and Research, Hanyang University, Ansan 15588, Republic of Korea
| | - Hyosung Choi
- Department of Chemistry, Hanyang University, Seoul 04763, Republic of Korea
- Research Institute for Natural Sciences, Hanyang University, Seoul 04763, Republic of Korea
- Research Institute for Convergence of Basic Science, Hanyang University, Seoul 04763, Republic of Korea
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