Thermal Conductive Encapsulation Enables Stable High-Power Perovskite-Converted Light-Emitting Diodes

Low-temperature strain-free encapsulation for perovskite solar cells and modules passing multifaceted accelerated ageing tests

Perovskite solar cells promise to be part of the future portfolio of photovoltaic technologies, but their instability is slow down their commercialization. Major stability assessments have been recently achieved but reliable accelerated ageing tests on beyond small-area cells are still poor. Here, we report an industrial encapsulation process based on the lamination of highly viscoelastic semi-solid/highly viscous liquid adhesive atop the perovskite solar cells and modules. Our encapsulant reduces the thermomechanical stresses at the encapsulant/rear electrode interface. The addition of thermally conductive two-dimensional hexagonal boron nitride into the polymeric matrix improves the barrier and thermal management properties of the encapsulant. Without any edge sealant, encapsulated devices withstood multifaceted accelerated ageing tests, retaining >80% of their initial efficiency. Our encapsulation is applicable to the most established cell configurations (direct/inverted, mesoscopic/planar), even with temperature-sensitive materials, and extended to semi-transparent cells for building-integrated photovoltaics and Internet of Things systems.

Highly efficient and stable Cs3Mn0.93Zn0.07Br5@SiO2 for wide color gamut backlight displays

Mn-based perovskites have become a new candidate material for backlight display applications. However, low efficiency and poor stability are the key problems limiting the application of Mn-based perovskites. In this work, Zn-doped and SiO2-encapsulated Cs3MnBr5, denoted as Cs3Mn0.93Zn0.07Br5@SiO2 (CMZBS), was successfully synthesized to improve the photoluminescence quantum yield (PLQY) and stability. After Zn doping, the PLQY increased from 51% to 72% due to the reduction in the energy transfer between [MnBr4]2-. The PLQY can be further improved to 80% after coating SiO2. Compared with Cs3MnBr5 (CMB), CMZBS showed better stability against thermal, air, light, and polar solvents (ethanol and isopropanol). In addition, a white LED (WLED) device with a CIE of (0.323, 0.325) was fabricated by integrating CMZBS and the red phosphor K2SiF6:Mn4+ on a 465 nm blue GaN chip, which exhibited a high luminous efficiency of 92 lm W-1 and excellent stability, demonstrating its great potential application in wide color gamut displays.

Strategies to Extend the Lifetime of Perovskite Downconversion Films for Display Applications

Metal halide perovskite nanocrystals (PeNCs) have outstanding luminescent properties that are suitable for displays that have high color purity and high absorption coefficient; so they are evaluated for application as light emitters for organic light-emitting diodes, light-converters for downconversion displays, and future near-eye augmented reality/virtual reality displays. However, PeNCs are chemically vulnerable to heat, light, and moisture, and these weaknesses must be overcome before devices that use PeNCs can be commercialized. This review examines strategies to overcome the low stability of PeNCs and thereby permit the fabrication of stable downconversion films, and summarizes downconversion-type display applications and future prospects. First, methods to increase the chemical stability of PeNCs are examined. Second, methods to encapsulate PeNC downconversion films to increase their lifetime are reviewed. Third, methods to increase the long-term compatibility of resin with PeNCs, and finally, how to secure stability using fillers added to the resin are summarized. Fourth, the method to manufacture downconversion films and the procedure to evaluate their reliability for commercialization is then described. Finally, the prospects of a downconversion system that exploits the properties of PeNCs and can be employed to fabricate fine pixels for high-resolution displays and for near-eye augmented reality/virtual reality devices are explored.

Room temperature nondestructive encapsulation via self-crosslinked fluorosilicone polymer enables damp heat-stable sustainable perovskite solar cells

Encapsulation engineering is an effective strategy to improve the stability of perovskite solar cells. However, current encapsulation materials are not suitable for lead-based devices because of their complex encapsulation processes, poor thermal management, and inefficient lead leakage suppression. In this work, we design a self-crosslinked fluorosilicone polymer gel, achieving nondestructive encapsulation at room temperature. Moreover, the proposed encapsulation strategy effectively promotes heat transfer and mitigates the potential impact of heat accumulation. As a result, the encapsulated devices maintain 98% of the normalized power conversion efficiency after 1000 h in the damp heat test and retain 95% of the normalized efficiency after 220 cycles in the thermal cycling test, satisfying the requirements of the International Electrotechnical Commission 61215 standard. The encapsulated devices also exhibit excellent lead leakage inhibition rates, 99% in the rain test and 98% in the immersion test, owing to excellent glass protection and strong coordination interaction. Our strategy provides a universal and integrated solution for achieving efficient, stable, and sustainable perovskite photovoltaics.

Degradation mechanisms of perovskite light-emitting diodes under electrical bias

Metal-halide perovskite light-emitting diodes (PeLEDs) are considered as new-generation highly efficient luminescent materials for application in displays and solid-state lighting. Since the first successful demonstration of PeLEDs in 2014, the research on the development of efficient PeLEDs has progressed significantly. Although the device efficiency has significantly improved over a short period of time, their overall performance has not yet reached the levels of mature technologies for practical applications. Various degradation processes are the major impediment to improving the performance and stability of PeLED devices. In this review, we discuss various analysis techniques that are necessary to gain insights into the effects of various degradation mechanisms on the performance and stability of PeLEDs. Based on the causes and effects of external and internal factors, the degradation processes and associated mechanisms are examined in terms of critical physical and chemical parameters. Further, according to the progress of the current research, the challenges faced in studying degradation mechanisms are also elucidated. Given the universality of the degradation behavior, an in-depth understanding of the device degradation may promote the development of optimization strategies and further improve the performance and stability of PeLEDs.

Highly efficient silica coated perovskite nanocrystals with the assistance of ionic liquids for warm white LEDs

Given the inherent characteristics of defect-tolerant, tunable emission performance, and high extinction coefficient, lead halide perovskite nanocrystals (NCs) have attracted widespread attention as a promising material in optoelectronic fields. However, their poor structural stability greatly impedes their practical applications. Herein, a novel strategy for synthesizing stable CsPbBr₃@SiO₂ NCs via the hydrolytic polycondensation of (3-aminopropyl)triethoxysilane (APTES) in the presence of ionic liquids (ILs) is deliberately designed. The problems of fluorescence quenching and undesirable agglomeration of NCs resulting from ligand loss and surface erosion existing in common encapsulation methods can be effectively resolved. The fast and controllable growth of the SiO₂ shell around the CsPbBr₃ NCs is realized owing to the high polarity and hygroscopicity of the IL. Moreover, the dual effects of the IL for passivating the surface defects and avoiding the structural degradation of NCs during the hydrolysis process of APTES are demonstrated. As a result, CsPbBr₃@SiO₂ NCs with a high photoluminescence quantum yield of 85.7% and excellent stability are realized. Furthermore, this method proves to be a versatile tool to obtain CsPbX₃@SiO₂ NCs with different halide compositions, realizing a broad tunable wavelength from 421.2 nm to 651.6 nm. A warm white LED with a high color rending index was assembled through packaging CsPbBr₃@SiO₂ NCs and Cu-In-Zn-S/ZnS/PVP composites on a commercial blue chip. These findings are expected to facilitate the development of perovskite NCs, which provides access to their optoelectronic applications.

Enhancing oxygen/moisture resistance of quantum dots by short-chain, densely cross-linked silica glass network

Quantum dots (QDs) are facing significant photoluminescence degradation in moisture environment. In QDs-silicone composites, the poor water resistance of silicone matrix makes it easy for water and oxygen molecules to erode QDs. To tackle this issue, we proposed a new QDs protection strategy by introducing short-chain silica precursors onto the QDs' surface, so that a dense silica passivation layer could be formed onto the QDs nanoparticles. Sol-gel method based on 3-aminopropyl triethoxysilane (APTES), 3-mercaptopropyl trimethoxysilane (MPTMS), and 3-mercaptopropyl triethoxysilane (MPTES) were adopted to prepare the uniform and crack-free QDs-silica glass (QD-glass). Because of the crosslinking of short-chain precursors, the formed silica glass possesses 38.6% smaller pore width and 68.6% lower pore volume than silicone, indicating its denser cross-linked network surrounding QDs. After 360 h water immersion, the QDs-glass demonstrated a 6% enhancement in red-light peak intensity, and maintained a stable full width at half maximum (FWHM) and peak wavelength, proving its excellent water-resistant ability. However, the conventional QDs-silicone composites not only showed a decrease of 75.3% in red-light peak intensity, but also a broadened FWHM and a redshifted peak wavelength after water immersion. QDs-glass also showed superior photostability after 132 h exposure to blue light. Red-light peak intensity of QDs-glass remained 87.3% of the initial while that of QDs-silicone decreased to 19.8%. And the intensity of QDs-glass dropped to 62.3% of that under 20 °C after thermal treatment of 160 °C. Besides, under increasing driving currents, the light conversion efficiency drop of QDs-glass is only one fifth that of QDs-silicone. Based on the QDs-glass, the white light-emitting diodes was achieved with a high luminous efficiency of 126.5 lm W^-1and a high color rendering index of 95.4. Thus, the newly proposed QD-glass has great significance in guaranteeing the working reliability of QDs-converted devices against moisture and high-power environment.