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Sharma S, Pandey M, Nagamatsu S, Tanaka H, Takashima K, Nakamura M, Pandey SS. High-Density, Nonvolatile, Flexible Multilevel Organic Memristor Using Multilayered Polymer Semiconductors. ACS APPLIED MATERIALS & INTERFACES 2024; 16:22282-22293. [PMID: 38644562 PMCID: PMC11082853 DOI: 10.1021/acsami.4c03111] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/24/2024] [Revised: 04/07/2024] [Accepted: 04/10/2024] [Indexed: 04/23/2024]
Abstract
Nonvolatile organic memristors have emerged as promising candidates for next-generation electronics, emphasizing the need for vertical device fabrication to attain a high density. Herein, we present a comprehensive investigation of high-performance organic memristors, fabricated in crossbar architecture with PTB7/Al-AlOx-nanocluster/PTB7 embedded between Al electrodes. PTB7 films were fabricated using the Unidirectional Floating Film Transfer Method, enabling independent uniform film fabrication in the Layer-by-Layer (LbL) configuration without disturbing underlying films. We examined the charge transport mechanism of our memristors using the Hubbard model highlighting the role of Al-AlOx-nanoclusters in switching-on the devices, due to the accumulation of bipolarons in the semiconducting layer. By varying the number of LbL films in the device architecture, the resistance of resistive states was systematically altered, enabling the fabrication of novel multilevel memristors. These multilevel devices exhibited excellent performance metrics, including enhanced memory density, high on-off ratio (>108), remarkable memory retention (>105 s), high endurance (87 on-off cycles), and rapid switching (∼100 ns). Furthermore, flexible memristors were fabricated, demonstrating consistent performance even under bending conditions, with a radius of 2.78 mm for >104 bending cycles. This study not only demonstrates the fundamental understanding of charge transport in organic memristors but also introduces novel device architectures with significant implications for high-density flexible applications.
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Affiliation(s)
- Shubham Sharma
- Graduate
School of Life Science and Systems Engineering, Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu, Kitakyushu 808-0196, Japan
| | - Manish Pandey
- Department
of Electronics and Communication Engineering, Indian Institute of Technology, Durg,Bhilai, Chattisgarh 491001, India
| | - Shuichi Nagamatsu
- Department
of Computer Science and Electronics, Kyushu
Institute of Technology, 680-4 Kawazu, Iizuka 820-8502, Japan
| | - Hirofumi Tanaka
- Department
of Human Intelligence Systems, Kyushu Institute
of Technology, 2-4 Hibikino, Wakamatsu, Kitakyushu 808-0196, Japan
| | - Kazuto Takashima
- Graduate
School of Life Science and Systems Engineering, Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu, Kitakyushu 808-0196, Japan
| | - Masakazu Nakamura
- Division
of Materials Science, Nara Institute of
Science and Technology, Ikoma, Nara 630-0192, Japan
| | - Shyam S. Pandey
- Graduate
School of Life Science and Systems Engineering, Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu, Kitakyushu 808-0196, Japan
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2
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Jo IY, Jeong D, Moon Y, Lee D, Lee S, Choi JG, Nam D, Kim JH, Cho J, Cho S, Kim DY, Ahn H, Kim BJ, Yoon MH. High-Performance Organic Electrochemical Transistors Achieved by Optimizing Structural and Energetic Ordering of Diketopyrrolopyrrole-Based Polymers. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307402. [PMID: 37989225 DOI: 10.1002/adma.202307402] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/25/2023] [Revised: 11/15/2023] [Indexed: 11/23/2023]
Abstract
For optimizing steady-state performance in organic electrochemical transistors (OECTs), both molecular design and structural alignment approaches must work in tandem to minimize energetic and microstructural disorders in polymeric mixed ionic-electronic conductor films. Herein, a series of poly(diketopyrrolopyrrole)s bearing various lengths of aliphatic-glycol hybrid side chains (PDPP-mEG; m = 2-5) is developed to achieve high-performance p-type OECTs. PDPP-4EG polymer with the optimized length of side chains exhibits excellent crystallinity owing to enhanced lamellar and backbone interactions. Furthermore, the improved structural ordering in PDPP-4EG films significantly decreases trap state density and energetic disorder. Consequently, PDPP-4EG-based OECT devices produce a mobility-volumetric capacitance product ([µC*]) of 702 F V-1 cm-1 s-1 and a hole mobility of 6.49 ± 0.60 cm2 V-1 s-1 . Finally, for achieving the optimal structural ordering along the OECT channel direction, a floating film transfer method is employed to reinforce the unidirectional orientation of polymer chains, leading to a substantially increased figure-of-merit [µC*] to over 800 F V-1 cm-1 s-1 . The research demonstrates the importance of side chain engineering of polymeric mixed ionic-electronic conductors in conjunction with their anisotropic microstructural optimization to maximize OECT characteristics.
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Affiliation(s)
- Il-Young Jo
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea
| | - Dahyun Jeong
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Yina Moon
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea
| | - Dongchan Lee
- Department of Physics and EHSRC, University of Ulsan, Ulsan, 44610, Republic of Korea
| | - Seungjin Lee
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Jun-Gyu Choi
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea
| | - Donghyeon Nam
- Department of Chemical and Biological Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Ji Hwan Kim
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea
| | - Jinhan Cho
- Department of Chemical and Biological Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Shinuk Cho
- Department of Physics and EHSRC, University of Ulsan, Ulsan, 44610, Republic of Korea
| | - Dong-Yu Kim
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea
| | - HyungJu Ahn
- Industrial Technology Convergence Center, Pohang Accelerator Laboratory, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Bumjoon J Kim
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Myung-Han Yoon
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea
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Sun J, Liu X, Tong Y, Zhao G, Ni Y, Zhao X, Wang B, Wang X, Zhang M, Guo S, Han X, Tang Q, Liu Y. Air/Liquid Interfacial Self-Assembled Intrinsically Stretchable IDT-BT Film Combining a Deliberate Transfer Adherence Strategy for Stretchable Electronics. ACS APPLIED MATERIALS & INTERFACES 2023; 15:46108-46118. [PMID: 37740925 DOI: 10.1021/acsami.3c08330] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/25/2023]
Abstract
Indacenodithiophene-benzothiadiazole (IDT-BT) has emerged as one of the most promising candidates for stretchable electronics due to its good stretchability and high mobility. Here, we present an air/liquid interface self-assembly method for the stretchable IDT-BT films and design an air-side transfer adherence strategy for improving the carrier mobility of IDT-BT. By controlling the cosolvent ratio in solution and the solvent evaporation rate, the large-scale intrinsically stretchable IDT-BT film with the diameter as high as ∼3 cm was self-assembled at the air/liquid interface. The resulting stretchable film with lightweight and good uniformity could be easily transferred to curved objects such as flexible 3 M tape, glass ball, and seashell. It is found that the transfer adherence strategy of the semiconductor film significantly affects the carrier transport. The transfer adherence from air-side can effectively decrease the number of the adsorbed water molecules at semiconductor/dielectric interface, which presents the mobility as high as 2.98 cm2 V-1 s-1. Based on the air/liquid interface self-assembled IDT-BT film, the peeling process of the film for preparation of full stretchable transistors could be eliminated. The resulting intrinsically stretchable transistor exhibits mobility higher than that of the transistor with a conventional spin-coated film. Our research provides new pathways for preparing the stretchable films and intrinsically stretchable organic field-effect transistors and shows the promising potential of the air/liquid interface self-assembly strategy for stretchable electronics.
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Affiliation(s)
- Jing Sun
- Center for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China
| | - Xiaoqian Liu
- Center for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China
| | - Yanhong Tong
- Center for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China
| | - Guodong Zhao
- Center for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China
| | - Yanping Ni
- Center for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China
| | - Xiaoli Zhao
- Center for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China
| | - Bin Wang
- Center for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China
| | - Xue Wang
- Center for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China
| | - Mingxin Zhang
- Center for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China
| | - Shanlei Guo
- Center for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China
| | - Xu Han
- Center for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China
| | - Qingxin Tang
- Center for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China
| | - Yichun Liu
- Center for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China
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Memon WA, Zhang Y, Zhang J, Yan Y, Wang Y, Wei Z. Alignment of organic conjugated molecules for high-performance device applications. Macromol Rapid Commun 2022; 43:e2100931. [PMID: 35338681 DOI: 10.1002/marc.202100931] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/31/2021] [Revised: 03/17/2022] [Indexed: 11/11/2022]
Abstract
High-performance organic semiconductor materials as the electroactive components of optoelectronic devices have attracted much attention and made them ideal candidates for solution-processable, large-area, and low-cost flexible electronics. Especially, organic field-effect transistors (OFETs) based on conjugated semiconductor materials have experienced stunning progress in device performance. To make these materials economically viable, comprehensive knowledge of charge transport mechanisms is required. The alignment of organic conjugated molecules in the active layer is vital to charge transport properties of devices. The present review highlights the recent progress of processing-structure-transport correlations that allow the precise and uniform alignment of organic conjugated molecules over large areas for multiple electronic applications, including OFETs, organic thermoelectric devices (OTEs), and organic phototransistors (OPTs). Different strategies for regulating crystallinity and macroscopic orientation of conjugated molecules are introduced to correlate the molecular packing, the device performance and charge transport anisotropy in multiple organic electronic devices. This article is protected by copyright. All rights reserved.
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Affiliation(s)
- Waqar Ali Memon
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Yajie Zhang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Jianqi Zhang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Yangjun Yan
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Yuheng Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Zhixiang Wei
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China
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Asif M, Latif A, Ali A, Fuwad A, Rafique MS, Nawaz MH, Shahid MK. High energy ion irradiation effect on electrical and optical properties of polymers. Radiat Phys Chem Oxf Engl 1993 2022. [DOI: 10.1016/j.radphyschem.2021.109931] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/26/2022]
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Wang Z, Gao M, He C, Shi W, Deng Y, Han Y, Ye L, Geng Y. Unraveling the Molar Mass Dependence of Shearing-Induced Aggregation Structure of a High-Mobility Polymer Semiconductor. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2108255. [PMID: 34850998 DOI: 10.1002/adma.202108255] [Citation(s) in RCA: 23] [Impact Index Per Article: 11.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/14/2021] [Revised: 11/16/2021] [Indexed: 06/13/2023]
Abstract
Aggregation-structure formation of conjugated polymers is a fundamental problem in the field of organic electronics and remains poorly understood. Herein, the molar mass dependence of the aggregation structure of a high-mobility conjugated copolymer (TDPP-Se) comprising thiophene-flanked diketopyrrolopyrrole and selenophene is thoroughly shown. Five batches of TDPP-Se are prepared with the number-average molecular weights (Mn ) varied greatly from 21 to 135 kg mol-1 . Small-angle neutron scattering and transmission electron microscopy are combined to probe the solution structure of these polymers, consistently using a deuterated solvent. All the polymers adopt 1D rod-like aggregation structures and the radius of the 1D rods is not sensitive to the Mn , while the length increases monotonically with Mn . By utilizing the ordered packing of the aggregated structure in solution, a highly aligned and ordered film is prepared and, thereafter, a reliable hole mobility of 13.8 cm2 V-1 s-1 is realized in organic thin-film transistors with the moderate Mn batch via bar coating. The hole mobility is among the highest values reported for diketopyrrolopyrrole-based polymers. This work paves the way to visualize the real aggregated structure of polymer semiconductors in solution and sheds light on the microstructure control of high-performance electronic devices.
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Affiliation(s)
- Zhongli Wang
- School of Materials Science & Engineering, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Tianjin University, Tianjin, 300350, China
| | - Mengyuan Gao
- School of Materials Science & Engineering, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Tianjin University, Tianjin, 300350, China
| | - Chunyong He
- China Spallation Neutron Source (CSNS), Spallation Neutron Source Science Centre, Dongguan, 523803, China
| | - Weichao Shi
- Key Laboratory of Functional Polymer Materials (Ministry of Education) and Institute of Polymer Chemistry, College of Chemistry, Nankai University, Tianjin, 300071, China
| | - Yunfeng Deng
- School of Materials Science & Engineering, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Tianjin University, Tianjin, 300350, China
| | - Yang Han
- School of Materials Science & Engineering, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Tianjin University, Tianjin, 300350, China
| | - Long Ye
- School of Materials Science & Engineering, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Tianjin University, Tianjin, 300350, China
| | - Yanhou Geng
- School of Materials Science & Engineering, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Tianjin University, Tianjin, 300350, China
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou, 350207, China
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