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Swetha SV, Gayathri R, Ardra M, Imran PM, Nagarajan S. Inherent D-A Architecture in Indoloquinoxalines with an Array of Substituents for Non-Volatile Memory Device Applications. Chemphyschem 2024; 25:e202400003. [PMID: 38372587 DOI: 10.1002/cphc.202400003] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/01/2024] [Revised: 01/30/2024] [Accepted: 02/19/2024] [Indexed: 02/20/2024]
Abstract
Donor-acceptor (D-A)-based architecture has been the key to increase storage capability efficiency through the enhanced charge transportation in the fabricated device. We have designed and synthesized a series of functionalized indoloquinoxalines (IQ) for non-volatile organic memory devices. The investigation on UV-visible spectra reveals the absorption maxima of the compounds around 420 nm, attributed to the intramolecular charge transfer between indole and quinoxaline moiety. The irreversible anodic peak in the 1.0 to 1.5 V range indicates the indole moiety's oxidation ability. Besides, the cathodic peak in the range of -0.5 to -1.0 V, contributed to the stability of the reduced quinoxaline unit. All the compounds exhibited uniformly covered thin film in SEM analysis, potentially facilitating the seamless charge carrier migration between adjacent molecules. The methoxyphenyl substituted compound exhibited the binary write-once read-many (WORM) memory behavior with the lowest threshold voltage of -0.81 V. The molecular simulations displayed the efficient intramolecular charge transfer, providing the fabricated device's distinctive conductive states. Except for the tert-butylphenyl compound, which showed volatile dynamic random-access memory (DRAM) behavior, all the other compounds exhibited non-volatile WORM memory behavior, suggesting IQs potential as an intrinsic D-A molecule in organic memory devices on further structural refinement.
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Affiliation(s)
- Senthilkumar V Swetha
- Department of Chemistry, Central University of TamilNadu, Thiruvarur, 610 005, India
| | - Ramesh Gayathri
- Department of Chemistry, Central University of TamilNadu, Thiruvarur, 610 005, India
| | - Murali Ardra
- Department of Chemistry, Central University of TamilNadu, Thiruvarur, 610 005, India
| | | | - Samuthira Nagarajan
- Department of Chemistry, Central University of TamilNadu, Thiruvarur, 610 005, India
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Sharma S, Pandey M, Nagamatsu S, Tanaka H, Takashima K, Nakamura M, Pandey SS. High-Density, Nonvolatile, Flexible Multilevel Organic Memristor Using Multilayered Polymer Semiconductors. ACS Appl Mater Interfaces 2024; 16:22282-22293. [PMID: 38644562 DOI: 10.1021/acsami.4c03111] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/23/2024]
Abstract
Nonvolatile organic memristors have emerged as promising candidates for next-generation electronics, emphasizing the need for vertical device fabrication to attain a high density. Herein, we present a comprehensive investigation of high-performance organic memristors, fabricated in crossbar architecture with PTB7/Al-AlOx-nanocluster/PTB7 embedded between Al electrodes. PTB7 films were fabricated using the Unidirectional Floating Film Transfer Method, enabling independent uniform film fabrication in the Layer-by-Layer (LbL) configuration without disturbing underlying films. We examined the charge transport mechanism of our memristors using the Hubbard model highlighting the role of Al-AlOx-nanoclusters in switching-on the devices, due to the accumulation of bipolarons in the semiconducting layer. By varying the number of LbL films in the device architecture, the resistance of resistive states was systematically altered, enabling the fabrication of novel multilevel memristors. These multilevel devices exhibited excellent performance metrics, including enhanced memory density, high on-off ratio (>108), remarkable memory retention (>105 s), high endurance (87 on-off cycles), and rapid switching (∼100 ns). Furthermore, flexible memristors were fabricated, demonstrating consistent performance even under bending conditions, with a radius of 2.78 mm for >104 bending cycles. This study not only demonstrates the fundamental understanding of charge transport in organic memristors but also introduces novel device architectures with significant implications for high-density flexible applications.
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Affiliation(s)
- Shubham Sharma
- Graduate School of Life Science and Systems Engineering, Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu, Kitakyushu 808-0196, Japan
| | - Manish Pandey
- Department of Electronics and Communication Engineering, Indian Institute of Technology, Durg,Bhilai, Chattisgarh 491001, India
| | - Shuichi Nagamatsu
- Department of Computer Science and Electronics, Kyushu Institute of Technology, 680-4 Kawazu, Iizuka 820-8502, Japan
| | - Hirofumi Tanaka
- Department of Human Intelligence Systems, Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu, Kitakyushu 808-0196, Japan
| | - Kazuto Takashima
- Graduate School of Life Science and Systems Engineering, Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu, Kitakyushu 808-0196, Japan
| | - Masakazu Nakamura
- Division of Materials Science, Nara Institute of Science and Technology, Ikoma, Nara 630-0192, Japan
| | - Shyam S Pandey
- Graduate School of Life Science and Systems Engineering, Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu, Kitakyushu 808-0196, Japan
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Liu X, Fan Z, Zheng Y, Zha J, Zhang Y, Zhu S, Zhang Z, Zhang X, Huang F, Liang T, Li C, Wang Q, Tan C. Controlled Synthesis of Lead-Free Double Perovskite Colloidal Nanocrystals for Nonvolatile Resistive Memory Devices. ACS Appl Mater Interfaces 2023; 15:55991-56002. [PMID: 37987746 DOI: 10.1021/acsami.3c12576] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/22/2023]
Abstract
Although lead-free double perovskites such as Cs2AgBiBr6 have been widely explored, they still remain a daunting challenge for the controlled synthesis of lead-free double perovskite nanocrystals with highly tunable morphology and band structure. Here, we report the controlled synthesis of lead-free double perovskite colloidal nanocrystals including Cs2AgBiBr6 and Cs2AgInxBi1-xBr6 via a facile wet-chemical synthesis method for the fabrication of high-performance nonvolatile resistive memory devices. Cs2AgBiBr6 colloidal nanocrystals with well-defined cuboidal, hexagonal, and triangular morphologies are synthesized through a facile wet-chemical approach by tuning the reaction temperature from 150 to 190 °C. Further incorporating indium into Cs2AgBiBr6 to synthesize alloyed Cs2AgInxBi1-xBr6 nanocrystals not only can induce the indirect-to-direct bandgap transition with enhanced photoluminescence but also can improve its structural stability. After optimizing the active layers and device structure, the fabricated Ag/polymethylene acrylate@Cs2AgIn0.25Bi0.75Br6/ITO resistive memory device exhibits a low power consumption (the operating voltage is ∼0.17 V), excellent cycling stability (>10 000 cycles), and good synaptic property. Our study would enable the facile wet-chemical synthesis of lead-free double perovskite colloidal nanocrystals in a highly controllable manner for the development of high-performance resistive memory devices.
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Affiliation(s)
- Xingyu Liu
- School of Chemistry, Guangzhou Key Laboratory of Analytical Chemistry for Biomedicine, South China Normal University, Guangzhou 510006, P. R. China
| | - Zhen Fan
- Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, P. R. China
| | - Yuhui Zheng
- School of Chemistry, Guangzhou Key Laboratory of Analytical Chemistry for Biomedicine, South China Normal University, Guangzhou 510006, P. R. China
| | - Jiajia Zha
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR 999077, P. R. China
| | - Yong Zhang
- Institute of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, P. R. China
| | - Siyuan Zhu
- Institute of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, P. R. China
| | - Zhang Zhang
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, P. R. China
| | - Xuyan Zhang
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, P. R. China
| | - Fei Huang
- School of Chemistry, Guangzhou Key Laboratory of Analytical Chemistry for Biomedicine, South China Normal University, Guangzhou 510006, P. R. China
| | - Tong Liang
- School of Chemistry, Guangzhou Key Laboratory of Analytical Chemistry for Biomedicine, South China Normal University, Guangzhou 510006, P. R. China
| | - Chunxia Li
- School of Chemistry, Guangzhou Key Laboratory of Analytical Chemistry for Biomedicine, South China Normal University, Guangzhou 510006, P. R. China
| | - Qianming Wang
- School of Chemistry, Guangzhou Key Laboratory of Analytical Chemistry for Biomedicine, South China Normal University, Guangzhou 510006, P. R. China
| | - Chaoliang Tan
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong SAR 999077, P. R. China
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Abstract
Recently, reticular materials, such as metal-organic frameworks and covalent organic frameworks, have been proposed as an active insulating layer in resistive switching memory systems through their chemically tunable porous structure. A resistive random access memory (RRAM) cell, a digital memristor, is one of the most outstanding emergent memory devices that achieves high-density electrical information storage with variable electrical resistance states between two terminals. The overall design of the RRAM devices comprises an insulating layer sandwiched between two metal electrodes (metal/insulator/metal). RRAM devices with fast switching speeds and enhanced storage density have the potential to be manufactured with excellent scalability owing to their relatively simple device architecture. In this review, recent progress on the development of reticular material-based RRAM devices and the study of their operational mechanisms are reviewed, and new challenges and future perspectives related to reticular material-based RRAM are discussed.
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Affiliation(s)
- Jongwon Oh
- Department of Chemistry, Wonkwang University, 460 Iksandae-ro, Iksan, Jeonbuk 54538, Republic of Korea
- Wonkwang Materials Institute of Science and Technology, 460 Iksandae-ro, Iksan, Jeonbuk 54538, Republic of Korea
| | - Seok Min Yoon
- Department of Chemistry, Wonkwang University, 460 Iksandae-ro, Iksan, Jeonbuk 54538, Republic of Korea
- Wonkwang Materials Institute of Science and Technology, 460 Iksandae-ro, Iksan, Jeonbuk 54538, Republic of Korea
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