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Zeng L, Zhang S, Meng J, Chen J, Jiang J, Shi Y, Huang J, Yin Z, Wu J, Zhang X. Single-Photon Emission from Point Defects in Hexagonal Boron Nitride Induced by Plasma Treatment. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38687622 DOI: 10.1021/acsami.4c02601] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/02/2024]
Abstract
Solid-state quantum emitters are gaining significant attention for many quantum information applications. Hexagonal boron nitride (h-BN) is an emerging host material for generating bright, stable, and tunable single-photon emission with narrow line widths at room temperature. In this work, we present a facile and efficient approach to generate high-density single-photon emitters (SPEs) in mechanically exfoliated h-BN through H- or Ar-plasma treatment followed by high-temperature annealing in air. It is notable that the postannealing is essential to suppress the fluorescence background in photoluminescence spectra and enhance emitter stability. These quantum emitters exhibit excellent optical properties, including high purity, brightness, stability, polarization degree, monochromaticity, and saturation intensity. The effects of process parameters on the quality of quantum emitters were systematic investigated. We find that there exists an optimal plasma power and h-BN thickness to achieve a high SPE density. This work offers a practical avenue for generating SPEs in h-BN and holds promise for future research and applications in quantum photonics.
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Affiliation(s)
- Libin Zeng
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Siyu Zhang
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Junhua Meng
- School of Physics and Optoelectronic Engineering, Beijing University of Technology, Beijing 100124, P. R. China
| | - Jingren Chen
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Ji Jiang
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Yiming Shi
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- School of Physics and Optoelectronic Engineering, Beijing University of Technology, Beijing 100124, P. R. China
| | - Jidong Huang
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Zhigang Yin
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Jinliang Wu
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
| | - Xingwang Zhang
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P.R. China
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2
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Shukla R, Sen A. Exploring the electron donor-acceptor duality of B 3N 3 in noncovalent interactions. Phys Chem Chem Phys 2023; 25:32040-32050. [PMID: 37982166 DOI: 10.1039/d3cp02656f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2023]
Abstract
Boron nitrides are very important and are used as lubricants, insulating agents, etc. Interactions of such systems with small molecules are important. This study examined the potential of B3N3 (triboron trinitride) to act as both an electron acceptor and an electron donor in the formation of noncovalent interactions. The anisotropic electronic distribution observed in the electrostatic potential map supported the B3N3's ability to exhibit the predicted electron donor-acceptor duality. Further computational investigations on optimized gas-phase complexes of B3N3:(NH3)n=1-3, B3N3:(NCH)n=1-6, B3N3:(N2H2)n=1-3 and (B3N3)2 confirmed that the B3N3 molecule can participate in B⋯N triel bonding interactions and H···N hydrogen bonding interactions. These energetically stable complexes are primarily governed by electrostatic and polarization interactions.
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Affiliation(s)
- Rahul Shukla
- Department of Chemistry (NCI Lab), GITAM School of Science, GITAM (Deemed to be University), Rushikonda, Visakhapatnam, Andhra Pradesh, 530045, India.
| | - Anik Sen
- Department of Chemistry (CMDD Lab), GITAM School of Science, GITAM (Deemed to be University), Rushikonda, Visakhapatnam, Andhra Pradesh, 530045, India.
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Jordan JW, Chernov AI, Rance GA, Stephen Davies E, Lanterna AE, Alves Fernandes J, Grüneis A, Ramasse Q, Newton GN, Khlobystov AN. Host-Guest Chemistry in Boron Nitride Nanotubes: Interactions with Polyoxometalates and Mechanism of Encapsulation. J Am Chem Soc 2022; 145:1206-1215. [PMID: 36586130 PMCID: PMC9853852 DOI: 10.1021/jacs.2c10961] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/01/2023]
Abstract
Boron nitride nanotubes (BNNTs) are an emerging class of molecular container offering new functionalities and possibilities for studying molecules at the nanoscale. Herein, BNNTs are demonstrated as highly effective nanocontainers for polyoxometalate (POM) molecules. The encapsulation of POMs within BNNTs occurs spontaneously at room temperature from an aqueous solution, leading to the self-assembly of a POM@BNNT host-guest system. Analysis of the interactions between the host-nanotube and guest-molecule indicate that Lewis acid-base interactions between W═O groups of the POM (base) and B-atoms of the BNNT lattice (acid) likely play a major role in driving POM encapsulation, with photoactivated electron transfer from BNNTs to POMs in solution also contributing to the process. The transparent nature of the BNNT nanocontainer allows extensive investigation of the guest-molecules by photoluminescence, Raman, UV-vis absorption, and EPR spectroscopies. These studies revealed considerable energy and electron transfer processes between BNNTs and POMs, likely mediated via defect energy states of the BNNTs and resulting in the quenching of BNNT photoluminescence at room temperature, the emergence of new photoluminescence emissions at cryogenic temperatures (<100 K), a photochromic response, and paramagnetic signals from guest-POMs. These phenomena offer a fresh perspective on host-guest interactions at the nanoscale and open pathways for harvesting the functional properties of these hybrid systems.
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Affiliation(s)
- Jack W. Jordan
- School
of Chemistry, University of Nottingham, University Park, Nottingham NG7 2RD, U.K.
| | - Alexander I. Chernov
- II.
Physikalisches Institut, Universität
zu Köln, Zülpicher Strasse 77, Köln 50937, Germany,Russian
Quantum Center, Skolkovo Innovation City, Moscow 121205, Russia
| | - Graham A. Rance
- School
of Chemistry, University of Nottingham, University Park, Nottingham NG7 2RD, U.K.,Nanoscale
& Microscale Research Centre, University
of Nottingham, University Park, Nottingham NG7 2RD, U.K.
| | - E. Stephen Davies
- School
of Chemistry, University of Nottingham, University Park, Nottingham NG7 2RD, U.K.
| | - Anabel E. Lanterna
- School
of Chemistry, University of Nottingham, University Park, Nottingham NG7 2RD, U.K.
| | - Jesum Alves Fernandes
- School
of Chemistry, University of Nottingham, University Park, Nottingham NG7 2RD, U.K.
| | - Alexander Grüneis
- II.
Physikalisches Institut, Universität
zu Köln, Zülpicher Strasse 77, Köln 50937, Germany
| | - Quentin Ramasse
- SuperSTEM,
Laboratory, Keckwick
Lane, Daresbury WA4 4AD, U.K.,School of
Chemical and Process Engineering & School of Physics and Astronomy, University of Leeds, Leeds LS2 9JT, U.K.
| | - Graham N. Newton
- School
of Chemistry, University of Nottingham, University Park, Nottingham NG7 2RD, U.K.
| | - Andrei N. Khlobystov
- School
of Chemistry, University of Nottingham, University Park, Nottingham NG7 2RD, U.K.,. Phone.: (044)-115-9513917
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Pashaei Adl H, Gorji S, Gualdrón-Reyes AF, Mora-Seró I, Suárez I, Martínez-Pastor JP. Enhanced Spontaneous Emission of CsPbI 3 Perovskite Nanocrystals Using a Hyperbolic Metamaterial Modified by Dielectric Nanoantenna. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 13:11. [PMID: 36615920 PMCID: PMC9824778 DOI: 10.3390/nano13010011] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/24/2022] [Revised: 12/10/2022] [Accepted: 12/13/2022] [Indexed: 06/17/2023]
Abstract
In this work, we demonstrate, theoretically and experimentally, a hybrid dielectric-plasmonic multifunctional structure able to provide full control of the emission properties of CsPbI3 perovskite nanocrystals (PNCs). The device consists of a hyperbolic metamaterial (HMM) composed of alternating thin metal (Ag) and dielectric (LiF) layers, covered by TiO2 spherical MIE nanoresonators (i.e., the nanoantenna). An optimum HMM leads to a certain Purcell effect, i.e., an increase in the exciton radiative rate, but the emission intensity is reduced due to the presence of metal in the HMM. The incorporation of TiO2 nanoresonators deposited on the top of the HMM is able to counteract such an undesirable intensity reduction by the coupling between the exciton and the MIE modes of the dielectric nanoantenna. More importantly, MIE nanoresonators result in a preferential light emission towards the normal direction to the HMM plane, increasing the collected signal by more than one order of magnitude together with a further increase in the Purcell factor. These results will be useful in quantum information applications involving single emitters based on PNCs together with a high exciton emission rate and intensity.
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Affiliation(s)
- Hamid Pashaei Adl
- Instituto de Ciencia de Materiales, Universidad de Valencia (ICMUV), 46071 Valencia, Spain
| | - Setatira Gorji
- Instituto de Ciencia de Materiales, Universidad de Valencia (ICMUV), 46071 Valencia, Spain
| | - Andrés F. Gualdrón-Reyes
- Institute of Advanced Materials (INAM), Universitat Jaume I, Avenida de Vicent Sos Baynat, s/n, 12071 Castello de la Plana, Spain
- Facultad de Ciencias Instituto de Ciencias Químicas, Isla Teja, Universidad Austral de Chile, Valdivia 5090000, Chile
| | - Iván Mora-Seró
- Institute of Advanced Materials (INAM), Universitat Jaume I, Avenida de Vicent Sos Baynat, s/n, 12071 Castello de la Plana, Spain
| | - Isaac Suárez
- Escuela Técnica Superior de Ingeniería, Universidad de Valencia, 46100 Valencia, Spain
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Shtansky DV, Matveev AT, Permyakova ES, Leybo DV, Konopatsky AS, Sorokin PB. Recent Progress in Fabrication and Application of BN Nanostructures and BN-Based Nanohybrids. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:2810. [PMID: 36014675 PMCID: PMC9416166 DOI: 10.3390/nano12162810] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/28/2022] [Revised: 08/11/2022] [Accepted: 08/12/2022] [Indexed: 05/27/2023]
Abstract
Due to its unique physical, chemical, and mechanical properties, such as a low specific density, large specific surface area, excellent thermal stability, oxidation resistance, low friction, good dispersion stability, enhanced adsorbing capacity, large interlayer shear force, and wide bandgap, hexagonal boron nitride (h-BN) nanostructures are of great interest in many fields. These include, but are not limited to, (i) heterogeneous catalysts, (ii) promising nanocarriers for targeted drug delivery to tumor cells and nanoparticles containing therapeutic agents to fight bacterial and fungal infections, (iii) reinforcing phases in metal, ceramics, and polymer matrix composites, (iv) additives to liquid lubricants, (v) substrates for surface enhanced Raman spectroscopy, (vi) agents for boron neutron capture therapy, (vii) water purifiers, (viii) gas and biological sensors, and (ix) quantum dots, single photon emitters, and heterostructures for electronic, plasmonic, optical, optoelectronic, semiconductor, and magnetic devices. All of these areas are developing rapidly. Thus, the goal of this review is to analyze the critical mass of knowledge and the current state-of-the-art in the field of BN-based nanomaterial fabrication and application based on their amazing properties.
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Affiliation(s)
- Dmitry V. Shtansky
- Labotoary of Inorganic Nanomaterials, National University of Science and Technology “MISiS”, Leninsky Prospect 4, 119049 Moscow, Russia
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Towards Integration of Two-Dimensional Hexagonal Boron Nitride (2D h-BN) in Energy Conversion and Storage Devices. ENERGIES 2022. [DOI: 10.3390/en15031162] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/10/2022]
Abstract
The prominence of two-dimensional hexagonal boron nitride (2D h-BN) nanomaterials in the energy industry has recently grown rapidly due to their broad applications in newly developed energy systems. This was necessitated as a response to the demand for mechanically and chemically stable platforms with superior thermal conductivity for incorporation in next-generation energy devices. Conventionally, the electrical insulation and surface inertness of 2D h-BN limited their large integration in the energy industry. However, progress on surface modification, doping, tailoring the edge chemistry, and hybridization with other nanomaterials paved the way to go beyond those conventional characteristics. The current application range, from various energy conversion methods (e.g., thermoelectrics) to energy storage (e.g., batteries), demonstrates the versatility of 2D h-BN nanomaterials for the future energy industry. In this review, the most recent research breakthroughs on 2D h-BN nanomaterials used in energy-based applications are discussed, and future opportunities and challenges are assessed.
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Liu H, Mendelson N, Abidi IH, Li S, Liu Z, Cai Y, Zhang K, You J, Tamtaji M, Wong H, Ding Y, Chen G, Aharonovich I, Luo Z. Rational Control on Quantum Emitter Formation in Carbon-Doped Monolayer Hexagonal Boron Nitride. ACS APPLIED MATERIALS & INTERFACES 2022; 14:3189-3198. [PMID: 34989551 DOI: 10.1021/acsami.1c21781] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Single-photon emitters (SPEs) in hexagonal boron nitride (hBN) are promising candidates for quantum light generation. Despite this, techniques to control the formation of hBN SPEs down to the monolayer limit are yet to be demonstrated. Recent experimental and theoretical investigations have suggested that the visible wavelength single-photon emitters in hBN originate from carbon-related defects. Here, we demonstrate a simple strategy for controlling SPE creation during the chemical vapor deposition growth of monolayer hBN via regulating surface carbon concentration. By increasing the surface carbon concentration during hBN growth, we observe increases in carbon doping levels by 2.4-fold for B-C bonds and 1.6-fold for N-C bonds. For the same samples, we observe an increase in the SPE density from 0.13 to 0.30 emitters/μm2. Our simple method enables the reliable creation of hBN SPEs in monolayer samples for the first time, opening the door to advanced two-dimensional (2D) quantum state engineering.
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Affiliation(s)
- Hongwei Liu
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology, and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, P. R. China
| | - Noah Mendelson
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
| | - Irfan H Abidi
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology, and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, P. R. China
- Centre for Advanced 2D Materials, National University of Singapore, 117542 Singapore
| | - Shaobo Li
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, P. R. China
| | - Zhenjing Liu
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology, and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, P. R. China
| | - Yuting Cai
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology, and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, P. R. China
| | - Kenan Zhang
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology, and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, P. R. China
| | - Jiawen You
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology, and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, P. R. China
| | - Mohsen Tamtaji
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology, and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, P. R. China
| | - Hoilun Wong
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology, and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, P. R. China
| | - Yao Ding
- School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, P. R. China
| | - Guojie Chen
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, Foshan University, Foshan 528225, P. R. China
- School of Physics and Optoelectronic Engineering, Foshan University, Foshan 528225, P. R. China
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Zhengtang Luo
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology, and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, P. R. China
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