Free-Standing Multilayer Molybdenum Disulfide Memristor for Brain-Inspired Neuromorphic Applications

In-Plane Polarization-Triggered WS2-Ferroelectric Heterostructured Synaptic Devices

To date, various kinds of memristors have been proposed as artificial neurons and synapses for neuromorphic computing to overcome the so-called von Neumann bottleneck in conventional computing architectures. However, related working principles are mostly ascribed to randomly distributed conductive filaments or traps, which usually lead to high stochasticity and poor uniformity. In this work, a heterostructure with a two-dimensional WS2 monolayer and a ferroelectric PZT film were demonstrated for memristors and artificial synapses, triggered by in-plane ferroelectric polarization. It is noted that the properties of the WS2/PZT heterostructures, including photoluminescence (PL) and conductivity, can be effectively tuned by in-plane polarization. In contrast to conventional memristors, the resistance switch of our memristors relies on the dynamic regulation of Schottky barriers at the WS2/metal contacts by ferroelectric polarization. PL characterizations verified the existence of lateral fields inside the WS2 originating from the polarization of the PZT. In particular, such memristors can emulate neuromorphic functions, including threshold-driven spiking, excitatory postsynaptic current, paired-pulse promotion (PPF), and so on. The results indicate that the WS2/PZT heterostructures with in-plane polarization are promising for the hardware implementation of artificial neural networks.

Switchable Photovoltaic Effect Induced by Light Intensity

Photovoltaic devices capable of reversible photovoltaic polarity through external signal modulation may enable multifunctional optoelectronic systems. However, such devices are limited to those induced by gate voltage, electrical poling, or optical wavelength by using complicated device architectures. Here, we show that the photovoltaic polarity is also switchable with the intensity of incident light. The modulation in light intensity induces photovoltaic polarity switching in geometrically asymmetric MoS2 Schottky photodiodes, explained by the asymmetric lowering of the Schottky barrier heights due to the trapping of photogenerated holes at the MoS2/Cr interface states. An applied gate voltage can further modulate the carrier concentration in the MoS2 channel, providing a method to tune the threshold light intensity of polarity switching. Finally, a bidirectional optoelectronic logic gate with "AND" and "OR" functions was demonstrated within a single device.

Enhanced Sensitivity in Photovoltaic 2D MoS2/Te Heterojunction VOC Sensors

Volatile organic compound (VOC) sensors have a broad range of applications including healthcare monitoring, product quality control, and air quality management. However, many such applications are demanding, requiring sensors with high sensitivity and selectivity. 2D materials are extensively used in many VOC sensing devices due to their large surface-to-volume ratio and fascinating electronic properties. These properties, along with their exceptional flexibility, low power consumption, room-temperature operation, chemical functionalization potential, and defect engineering capabilities, make 2D materials ideal for high-performance VOC sensing. Here, a 2D MoS2/Te heterojunction is reported that significantly improves the VOC detection compared to MoS2 and Te sensors on their own. Density functional theory (DFT) analysis shows that the MoS2/Te heterojunction significantly enhances the adsorption energy and therefore sensing sensitivity of the sensor. The sensor response, which denotes the percentage change in the sensor's conductance upon VOC exposure, is further enhanced under photo-illumination and zero-bias conditions to values up to ≈7000% when exposed to butanone. The MoS2/Te heterojunction is therefore a promising device architecture for portable and wearable sensing applications.

Organic-Inorganic Hybrid Synaptic Transistors: Methyl-Silsesquioxanes-Based Electric Double Layer for Enhanced Synaptic Functionality and CMOS Compatibility

Electrical double-layer (EDL) synaptic transistors based on organic materials exhibit low thermal and chemical stability and are thus incompatible with complementary metal oxide semiconductor (CMOS) processes involving high-temperature operations. This paper proposes organic-inorganic hybrid synaptic transistors using methyl silsesquioxane (MSQ) as the electrolyte. MSQ, derived from the combination of inorganic silsesquioxanes and the organic methyl (-CH3) group, exhibits exceptional thermal and chemical stability, thus ensuring compatibility with CMOS processes. We fabricated Al/MSQ electrolyte/Pt capacitors, exhibiting a substantial capacitance of 1.89 µF/cm2 at 10 Hz. MSQ-based EDL synaptic transistors demonstrated various synaptic behaviors, such as excitatory post-synaptic current, paired-pulse facilitation, signal pass filtering, and spike-number-dependent plasticity. Additionally, we validated synaptic functions such as information storage and synapse weight adjustment, simulating brain synaptic operations through potentiation and depression. Notably, these synaptic operations demonstrated stability over five continuous operation cycles. Lastly, we trained a multi-layer artificial deep neural network (DNN) using a handwritten Modified National Institute of Standards and Technology image dataset. The DNN achieved an impressive recognition rate of 92.28%. The prepared MSQ-based EDL synaptic transistors, with excellent thermal/chemical stability, synaptic functionality, and compatibility with CMOS processes, harbor tremendous potential as materials for next-generation artificial synapse components.

Pseudocapacitance-Induced Synaptic Plasticity of Tribo-Phototronic Effect Between Ionic Liquid and 2D MoS2

Contact-induced electrification, commonly referred to as triboelectrification, is the subject of extensive investigation at liquid-solid interfaces due to its wide range of applications in electrochemistry, energy harvesting, and sensors. This study examines the triboelectric between an ionic liquid and 2D MoS2 under light illumination. Notably, when a liquid droplet slides across the MoS2 surface, an increase in the generated current and voltage is observed in the forward direction, while a decrease is observed in the reverse direction. This suggests a memory-like tribo-phototronic effect between ionic liquid and 2D MoS2 . The underlying mechanism behind this tribo-phototronic synaptic plasticity is proposed to be ion adsorption/desorption processes resulting from pseudocapacitive deionization/ionization at the liquid-MoS2  interface. This explanation is supported by the equivalent electrical circuit modeling, contact angle measurements, and electronic band diagrams. Furthermore, the influence of various factors such as velocity, step size, light wavelength and intensity, ion concentration, and bias voltage is thoroughly investigated. The artificial synaptic plasticity arising from this phenomenon exhibits significant synaptic features, including potentiation/inhibition, paired-pulse facilitation/depression, and short-term memory (STM) to long-term memory (LTM) transition. This research opens up promising avenues for the development of synaptic memory systems and intelligent sensing applications based on liquid-solid interfaces.

Technology Roadmap for Flexible Sensors

Humans rely increasingly on sensors to address grand challenges and to improve quality of life in the era of digitalization and big data. For ubiquitous sensing, flexible sensors are developed to overcome the limitations of conventional rigid counterparts. Despite rapid advancement in bench-side research over the last decade, the market adoption of flexible sensors remains limited. To ease and to expedite their deployment, here, we identify bottlenecks hindering the maturation of flexible sensors and propose promising solutions. We first analyze challenges in achieving satisfactory sensing performance for real-world applications and then summarize issues in compatible sensor-biology interfaces, followed by brief discussions on powering and connecting sensor networks. Issues en route to commercialization and for sustainable growth of the sector are also analyzed, highlighting environmental concerns and emphasizing nontechnical issues such as business, regulatory, and ethical considerations. Additionally, we look at future intelligent flexible sensors. In proposing a comprehensive roadmap, we hope to steer research efforts towards common goals and to guide coordinated development strategies from disparate communities. Through such collaborative efforts, scientific breakthroughs can be made sooner and capitalized for the betterment of humanity.

Dual Light Temporal Coding Modes Enabled by Nanoparticle-Mediated Phototransistors via Gate Bias Modulation for Brain-Inspired Visual Perception

The core integration and cooperation of the retina, neurons, and synapses in the visual systems enable humans to effectively sense and process visual information with low power consumption. To mimic the human visual system, an artificial sensory nerve, along with optical sensing─a paired-pulse ratio (PPR) of the light pulse stimulated currents─and neural coding has been developed. For performing the artificial visual perception functions, we consistently reveal the positive and negative correlations between the PPR index and light pulse time interval by applying two consecutive light stimuli with gate voltages of -10 and 5 V, respectively, to a phototransistor. This phototransistor contains a heterostructured channel layer composed of zinc-oxide nanoparticles (ZnO NPs) interconnected with a solution-processed zinc-tin oxide (ZTO) film. The oxygen adsorption and desorption on the ZnO NP surface under light illumination are responsible for the positive-sloped PPR; the electron trapping effect at the ZnO NP/SiO2 interface is attributed to the negative-sloped PPR. The various accountable light power densities and number of surface trap states are considered to be directly realizing these spike-timing interval-dependent characteristics. The actual benefit of these characteristics is the dual temporal coding modes based on multiplicative operation using a ZTO/ZnO NP phototransistor realized via the active gate voltage modulation. The contrary tendency of the PPR index and temporal coding─a major biological neural coding─is well demonstrated by the potential of ZTO/ZnO NP phototransistors to be implemented in sensor networks for an artificial visual perception.

Self-Powered, Broadband Photodetector Based on Two-Dimensional Tellurium-Silicon Heterojunction

As a new class of two-dimensional (2D) materials and a group-VI chalcogen, tellurium (Te) has emerged as a p-type semiconductor with high carrier mobility. Potential applications include high-speed opto-electronic devices for communication. One method to enhance the performance of 2D material-based photodetectors is by integration with a IV group of semiconductors such as silicon (Si). In this work, we demonstrate a self-powered, high-speed, broadband photodetector based on the 2D Te/n-type Si heterojunction. The fabricated Te/n-type Si heterojunction exhibits high performance in the UV-vis-NIR light with a high responsivity of up to ∼250 mA/W and a photocurrent-to-dark current ratio (I _on/I _off) of ∼10⁶, fast response time of 8.6 μs, and superior repeatability and stability. The results show that the fabricated Te/n-type Si heterojunction photodetector has a strong potential to be utilized in ultrafast, broadband, and efficient photodetection applications.

Advances in Emerging Photonic Memristive and Memristive-Like Devices

Possessing the merits of high efficiency, low consumption, and versatility, emerging photonic memristive and memristive-like devices exhibit an attractive future in constructing novel neuromorphic computing and miniaturized bionic electronic system. Recently, the potential of various emerging materials and structures for photonic memristive and memristive-like devices has attracted tremendous research efforts, generating various novel theories, mechanisms, and applications. Limited by the ambiguity of the mechanism and the reliability of the material, the development and commercialization of such devices are still rare and in their infancy. Therefore, a detailed and systematic review of photonic memristive and memristive-like devices is needed to further promote its development. In this review, the resistive switching mechanisms of photonic memristive and memristive-like devices are first elaborated. Then, a systematic investigation of the active materials, which induce a pivotal influence in the overall performance of photonic memristive and memristive-like devices, is highlighted and evaluated in various indicators. Finally, the recent advanced applications are summarized and discussed. In a word, it is believed that this review provides an extensive impact on many fields of photonic memristive and memristive-like devices, and lay a foundation for academic research and commercial applications.

Multiwavelength Optoelectronic Synapse with 2D Materials for Mixed-Color Pattern Recognition

Neuromorphic visual systems emulating biological retina functionalities have enormous potential for in-sensor computing, with prospects of making artificial intelligence ubiquitous. Conventionally, visual information is captured by an image sensor, stored by memory units, and eventually processed by the machine learning algorithm. Here, we present an optoelectronic synapse device with multifunctional integration of all the processes required for real time object identification. Ultraviolet-visible wavelength-sensitive MoS₂ FET channel with infrared sensitive PtTe₂/Si gate electrode enables the device to sense, store, and process optical data for a wide range of the electromagnetic spectrum, while maintaining a low dark current. The device exhibits optical stimulation-controlled short-term and long-term potentiation, electrically driven long-term depression, synaptic weight update for multiple wavelengths of light ranging from 300 nm in ultraviolet to 2 μm in infrared. An artificial neural network developed using the extracted weight update parameters of the device can be trained to identify both single wavelength and mixed wavelength patterns. This work demonstrates a device that could potentially be used for realizing a multiwavelength neuromorphic visual system for pattern recognition and object identification.

Graphene-oxide interface for optoelectronic synapse application

Optoelectronic synapses combine the functionalities of a non-volatile memory and photodetection in the same device, paving the path for the realization of artificial retina systems which can capture, pre-process, and identify images on the same platform. Graphene/Ta₂O₅/graphene phototransistor exhibits synapse characteristics when visible electromagnetic radiation of wavelength 405 nm illuminates the device. The photocurrent is retained after light withdrawal when positive gate voltage is applied to the device. The device exhibits distinct conductance states, modulated by different parameters of incident light, such as pulse width and number of pulses. The conductance state can be retained for 10⁴ s, indicating long term potentiation (LTP), similar to biological synapses. By using optical and electrical pulses, the device shows optical potentiation and electrical LTD repeatably, implying their applicability in neural networks for pattern recognition.