Enhancing Near-Room-Temperature GeTe Thermoelectrics through In/Pb Co-doping

Phase-Controlled Synthesis and Phase-Change Properties of Colloidal Cu-Ge-Te Nanoparticles

Phase-change memory (PCM) technology has recently attracted a vivid interest for neuromorphic applications, in-memory computing, and photonic integration due to the tunable refractive index and electrical conductivity between the amorphous and crystalline material states. Despite this, it is increasingly challenging to scale down the device dimensions of conventionally sputtered PCM memory arrays, restricting the implementation of PCM technology in mass applications such as consumer electronics. Here, we report the synthesis and structural study of sub-10 nm Cu-Ge-Te (CGT) nanoparticles as suitable candidates for low-cost and ultrasmall PCM devices. We show that our synthesis approach can accurately control the structure of the CGT colloids, such as composition-tuned CGT amorphous nanoparticles as well as crystalline CGT nanoparticles with trigonal α-GeTe and tetragonal Cu2GeTe3 phases. In situ characterization techniques such as high-temperature X-ray diffraction and X-ray absorption spectroscopy reveal that Cu doping in GeTe improves the thermal properties and amorphous phase stability of the nanoparticles, in addition to nanoscale effects, which enhance the nonvolatility characteristics of CGT nanoparticles even further. Moreover, we demonstrate the thin-film fabrication of CGT nanoparticles and characterize their optical properties with spectroscopic ellipsometry measurements. We reveal that CGT nanoparticle thin films exhibit a negative reflectivity change and have good reflectivity contrast in the near-IR spectrum. Our work promotes the possibility to use PCM in nanoparticle form for applications such as electro-optical switching devices, metalenses, reflectivity displays, and phase-change IR devices.

Two-step phase manipulation by tailoring chemical bonds results in high-performance GeSe thermoelectrics

In thermoelectrics, phase engineering serves a crucial function in determining the power factor by affecting the band degeneracy. However, for low-symmetry compounds, the mainstream one-step phase manipulation strategy, depending solely on the valley or orbital degeneracy, is inadequate to attain a high density-of-states effective mass and exceptional zT. Here, we employ a distinctive two-step phase manipulation strategy through stepwise tailoring chemical bonds in GeSe. Initially, we amplify the valley degeneracy via CdTe alloying, which elevates the crystal symmetry from a covalently bonded orthorhombic to a metavalently bonded rhombohedral phase by significantly suppressing the Peierls distortion. Subsequently, we incorporate Pb to trigger the convergence of multivalence bands and further enhance the density-of-states effective mass by moderately restraining the Peierls distortion. Additionally, the atypical metavalent bonding in rhombohedral GeSe enables a high Ge vacancy concentration and a small band effective mass, leading to increased carrier concentration and mobility. This weak chemical bond along with strong lattice anharmonicity also reduces lattice thermal conductivity. Consequently, this unique property ensemble contributes to an outstanding zT of 0.9 at 773 K for Ge0.80Pb0.20Se(CdTe)0.25. This work underscores the pivotal role of the two-step phase manipulation by stepwise tailoring of chemical bonds in improving the thermoelectric performance of p-bonded chalcogenides.

Vacancy Suppression Induced Synergetic Optimization of Thermoelectric Performance in Sb-Doped GeTe Evidenced by Positron Annihilation Spectroscopy

Synergetic optimization of the electrical and thermal transport performance of GeTe has been achieved through Sb doping in this work, resulting in a high thermoelectric figure of merit ZT of 2.2 at 723 K. Positron annihilation measurements provided clear evidence that Sb doping in GeTe can effectively suppress the Ge vacancies, and the decrease of vacancy concentration coincides well with the change of hole carrier concentration after Sb doping. The decreased scattering by hole carriers and vacancies causes notable increase in carrier mobility. Despite this, the density of states effective mass is not enhanced by Sb doping, a maximum power factor of 4562 μW m-1 K-2 at 723 K is obtained for Ge0.94Sb0.06Te with an optimized carrier concentration of ∼3.65 × 1020 cm-3. Meanwhile, the electronic thermal conductivity κe is reduced because of the decreased electrical conductivity σ with the increase of the Sb doping amount. In addition, the lattice thermal conductivity κL is also suppressed due to multiple phonon scattering mechanism, such as the large mass and strain fluctuations by the substitution of Sb for Ge atoms, and also the unique microstructure including grain boundary, nano-pore, and dislocation in the samples. In conclusion, a maximum ZT of 2.2 is gained at 723 K, which contributes to preferable TE property for GeTe-based materials.

GeTe2 Phase Change Material for Terahertz Devices with Reconfigurable Functionalities Using Optical Activation

The phenomenon of phase change transition has been a fascinating research subject over decades due to a possibility of dynamically controlled materials properties, allowing the creation of optical devices with unique features. The present paper unravels the optical characteristics and terahertz (THz) dielectric permittivity of a novel phase change material (PCM), GeTe2, prepared by pulsed laser deposition (PLD) and their remarkable contrast in crystalline and amorphous states, in particular, a difference of 7 orders of magnitude in conductivity. The THz spectra were analyzed using the harmonic oscillator and Drude term. Using GeTe2 PLD films, we designed and prepared a THz metasurface in the form of periodic structure and revealed a possibility of tuning the THz resonance either by a thermal control or light-induced crystallization response, thus achieving the dynamic and tunable functionality of the metastructure. We propose controlling the state of metasurface by observing the intensity characteristics of the Raman peak of 155 cm-1. Density functional theory (DFT) modeling demonstrates that in the process of crystallization the mode intensity of 155 cm-1 assigned to Te-Te stretching in amorphous chain fragments decreases and disappears at full crystallization.

High-Power Factor Enabled by Efficient Manipulation Interaxial Angle for Enhancing Thermoelectrics of GeTe-Cu2Te Alloys

The emerged strategy of manipulating the rhombohedral crystal structure provides another new degree of freedom for optimizing the thermoelectric properties of GeTe-based compounds. However, the concept is difficult to be effectively measured and often depends on heavy doping that scatters carriers severely. Herein, we synergistically manipulate lattice distortion and vacancy concentration to promote the excellent electrical transport of GeTe-Cu2Te alloys and quantify the interaxial angle-dependent density of state effective mass. Distinct from the conventional electronic coupling effect, about 2% substitution of Zr4+ significantly increases the interaxial angle, thereby enhancing the band convergence effect and improving the Seebeck coefficient. In addition, Ge-compensation attenuates the mobility deterioration, leading to improved power factor over the whole temperature range, especially exceeding ∼22 μW cm-1 K-2 at 300 K. Furthermore, the Debye-Callaway model elucidates low lattice thermal conductivity due to strong phonon scattering from Zr/Ge substitutional defects. As a result, the highest figure of merit zT of ∼1.6 (at 650 K) and average zTave of ∼0.9 (300-750 K) are obtained in (Ge1.01Zr0.02Te)0.985(Cu2Te)0.015. This work demonstrates the effective band modulation of Zr on GeTe-based materials, indicating that the modification of the interaxial angle is a deep pathway to improve thermoelectrics.

Room-Temperature High-Performance Thermoelectric Bi0.6 Sb0.4 Te: Elimination of Detrimental Band Inversion in BiTe

Room-temperature thermoelectric materials are the key to miniaturizing refrigeration equipment and have great scientific and social implications, yet their application is hindered by their extreme scarcity. BiTe exhibiting strong spin-orbit coupling peaks ZT at 600 K. Herein, we discover the synergy effect of Sb doping in BiTe that eliminates the detrimental band inversion and leads to an overlap of conduction band (CB) and valence band that significantly increases the S from 33 to 124 μV K^-1 . In addition, this effect enhances the μ from 58 to 92 cm²  V^-1  s^-1 owing to the sharp increase in the CB slope along the Γ-A in the first Brillouin zone. Furthermore, Sb doping increases the anharmonicity, shortens the phonon lifetime and lowers κ_lat . Finally, Se/Sb codoping further optimizes the ZT to 0.6 at 300 K, suggesting that Bi_0.6 Sb_0.4 Te_1-y Se_y is a potential room-temperature TE material.

Synergistic Effect of Work Function and Acoustic Impedance Mismatch for Improved Thermoelectric Performance in GeTe-WC Composite

The preparation of composite materials is a promising methodology for concurrent optimization of electrical and thermal transport properties for improved thermoelectric (TE) performance. This study demonstrates how the acoustic impedance mismatch (AIM) and the work function of components decouple the TE parameters to achieve enhanced TE performance of the (1-z)Ge0.87Mn0.05Sb0.08Te-(z)WC composite. The simultaneous increase in the electrical conductivity (σ) and Seebeck coefficient (α) with WC (tungsten carbide) volume fraction (z) results in an enhanced power factor (α2σ) in the composite. The rise in σ is attributed to the creation of favorable current paths through the WC phase located between grains of Ge0.87Mn0.05Sb0.08Te, which leads to increased carrier mobility in the composite. Detailed analysis of the obtained electrical properties was performed via Kelvin probe force microscopy (work function measurement) and atomic force microscopy techniques (spatial current distribution map and current-voltage (I-V) characteristics), which are further supported by density functional theory (DFT) calculations. Furthermore, the difference in elastic properties (i.e., sound velocity) between Ge0.87Mn0.05Sb0.08Te and WC results in a high AIM, and hence, a large interface thermal resistance (Rint) between the phases is achieved. The correlation between Rint and the Kapitza radius depicts a reduced phonon thermal conductivity (κph) of the composite, which is explained using the Bruggeman asymmetrical model. Moreover, the decrease in κph is further validated by phonon dispersion calculations that indicate the decrease in phonon group velocity in the composite. The simultaneous effect of enhanced α2σ and reduced κph results in a maximum figure of merit (zT) of 1.93 at 773 K for (1-z)Ge0.87Mn0.05Sb0.08Te-(z)WC composite for z = 0.010. It results in an average thermoelectric figure of merit (zTav) of 1.02 for a temperature difference (ΔT) of 473 K. This study shows promise to achieve higher zTav across a wide range of composite materials.

Isotropic Thermoelectric Performance of Layer-Structured n-Type Bi2Te2.7Se0.3 by Cu Doping

The lamellar structure of (Bi,Sb)₂(Te,Se)₃ alloys makes it difficult to achieve isotropic thermoelectric properties in the directions along and perpendicular to the c-axis, especially for n-type samples. In this work, by introducing Cu in polycrystalline n-type Cu_xBi₂Te_2.7Se_0.3 and applying the traditional synthesis process of high-energy ball milling and hot pressing, substantial enhancement of the thermoelectric figure of merit zT is obtained in both in-plane and out-of-plane directions. The intercalated Cu not only provides electron transport media for mobility improvement but also reduces the lattice thermal conductivity owing to the strain fluctuation. Typically, the van der Waals gap in the out-of-plane direction leads to relatively slower mobility and lower lattice thermal conductivity. Taking into account the same average density-of-state effective mass (m_avg^* ∼ 1.5m_e) predicted based on a single parabolic model, the obtained quality factor β is comparable in both directions. As a result, a peak zT ∼ 1.05 at 420 K and the average zT approaching to 1.0 in the temperature range 300-500 K are obtained in both directions for the Cu_0. 02Bi₂Te_2.7Se_0.3 sample. The simple synthesis process and isotropic thermoelectric properties in this work make n-type Bi₂Te₃ more convenient for potential production and application.