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Vuong VH, Ippili S, Pammi SVN, Bae J, Yang TY, Jeong MJ, Chang HS, Jeon MG, Choi J, Tran MT, Tran VD, Jella V, Yoon SG. Enhanced Responsivity and Photostability of Cs 3Bi 2I 9-Based Self-Powered Photodetector via Chemical Vapor Deposition Engineering. SMALL METHODS 2024:e2400310. [PMID: 39225357 DOI: 10.1002/smtd.202400310] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/03/2024] [Revised: 05/29/2024] [Indexed: 09/04/2024]
Abstract
Lead-based halide perovskites have gained significant prominence in recent years in optoelectronics and photovoltaics, owing to their exceptional optoelectronic properties. Nonetheless, the toxicity of lead (Pb) and the stability concern pose obstacles to their potential for future large-scale market development. Herein, stable lead-free Cs3Bi2I9 (CBI) films are presented with smooth and compact morphologies synthesized via chemical vapor deposition (CVD), demonstrating their application as an UV photodetector in a self-powered way. The self-powered photodetectors (SPDs) exhibit remarkable characteristics, including a responsivity of 1.57 A W-1 and an impressive specific detectivity of 3.38 × 1013 Jones under the illumination of 365 nm at zero bias. Furthermore, the SPDs exhibit a nominal decline (≈2.2%) in the photocurrent under constant illumination over 500 h, highlighting its impressive long-term operational stability. Finally, the real-time UV-detection capability of the device is demonstrated by measuring the photocurrent under various conditions, including room light and sunlight at different times. These findings offer a new platform for synthesizing stable and high-quality perovskite films, and SPDs for advancing the development of wearable and portable electronics.
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Affiliation(s)
- Van-Hoang Vuong
- Department of Materials Science and Engineering, Chungnam National University, Daejeon, 34134, South Korea
| | - Swathi Ippili
- Department of Materials Science and Engineering, Chungnam National University, Daejeon, 34134, South Korea
| | - S V N Pammi
- Department of Physics, School of Sciences & Humanities, SR University, Warangal, Telangana, 506371, India
| | - JeongJu Bae
- Department of Materials Science and Engineering, Chungnam National University, Daejeon, 34134, South Korea
| | - Tae-Youl Yang
- Department of Materials Science and Engineering, Chungnam National University, Daejeon, 34134, South Korea
| | - Min Ji Jeong
- Graduate School of Energy Science and Technology, Chungnam National University, Daejeon, 34134, South Korea
| | - Hyo Sik Chang
- Graduate School of Energy Science and Technology, Chungnam National University, Daejeon, 34134, South Korea
| | - Min-Gi Jeon
- Department of Materials Science and Engineering, Chungnam National University, Daejeon, 34134, South Korea
| | - Jihoon Choi
- Department of Materials Science and Engineering, Chungnam National University, Daejeon, 34134, South Korea
| | - Manh Trung Tran
- Faculty of Materials Science and Engineering, Phenikaa University, Hanoi, 10000, Vietnam
| | - Van-Dang Tran
- School of Materials Science and Engineering, Hanoi University of Science and Technology, Hanoi, 100000, Vietnam
| | - Venkatraju Jella
- Department of Materials Science and Engineering, Chungnam National University, Daejeon, 34134, South Korea
| | - Soon-Gil Yoon
- Department of Materials Science and Engineering, Chungnam National University, Daejeon, 34134, South Korea
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Zhou M, Zhao Y, Zhang Q, Gu X, Zhang J, Jiang M, Lu S. Enhance the responsivity of self-driven ultraviolet photodetector by (Al,Ga)N nanowire/graphene/PVDF heterojunction with high stability. OPTICS LETTERS 2024; 49:338-341. [PMID: 38194555 DOI: 10.1364/ol.509752] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/24/2023] [Accepted: 12/05/2023] [Indexed: 01/11/2024]
Abstract
Due to the low-power consumption, self-driven ultraviolet (UV) photodetectors have great potentials in a broad range of applications, such as optical communication, ozone monitoring, bio-medicine, and flame detection. In this Letter, it is pretty novel to enhance the photocurrent and responsivity of self-driven UV photodetectors by (Al,Ga)N nanowire/graphene/polyvinylidene fluoride (PVDF) heterojunction successfully. Compared to those of the photodetector with only nanowire/graphene heterojunction, it is found that both the photocurrent and responsivity of the photodetector with nanowire/graphene/PVDF heterojunction can be enhanced more than 100%. It is proposed that PVDF could maintain the internal gain by increasing the number of carrier cycles. Furthermore, this photodetector can also have a high detectivity of 5.3×1011 Jones and fast response speed under 310 nm illumination. After preserving for one month without any special protection, both photocurrent and responsivity of the photodetector with nanowire/graphene/PVDF heterojunction are demonstrated to be quite stable. Therefore, this work paves an effective way to improve the performance of photodetectors for their applications in the fields of next-generation optoelectronic devices.
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Nguyen TMH, Tran MH, Bark CW. Deep-Ultraviolet Transparent Electrode Design for High-Performance and Self-Powered Perovskite Photodetector. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2979. [PMID: 37999333 PMCID: PMC10675135 DOI: 10.3390/nano13222979] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/25/2023] [Revised: 11/17/2023] [Accepted: 11/19/2023] [Indexed: 11/25/2023]
Abstract
In this study, a highly crystalline and transparent indium-tin-oxide (ITO) thin film was prepared on a quartz substrate via RF sputtering to fabricate an efficient bottom-to-top illuminated electrode for an ultraviolet C (UVC) photodetector. Accordingly, the 26.6 nm thick ITO thin film, which was deposited using the sputtering method followed by post-annealing treatment, exhibited good transparency to deep-UV spectra (67% at a wavelength of 254 nm), along with high electrical conductivity (11.3 S/cm). Under 254 nm UVC illumination, the lead-halide-perovskite-based photodetector developed on the prepared ITO electrode in a vertical structure exhibited an excellent on/off ratio of 1.05 × 104, a superb responsivity of 250.98 mA/W, and a high specific detectivity of 4.71 × 1012 Jones without external energy consumption. This study indicates that post-annealed ITO ultrathin films can be used as electrodes that satisfy both the electrical conductivity and deep-UV transparency requirements for high-performance bottom-illuminated optoelectronic devices, particularly for use in UVC photodetectors.
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Affiliation(s)
| | | | - Chung Wung Bark
- Department of Electrical Engineering, Gachon University, 1342 Seongnam-daero, Sujeong-gu, Seongnam-si 13120, Gyeonggi-do, Republic of Korea; (T.M.H.N.); (M.H.T.)
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Yan T, Ge J, Su L, Liu X, Fang X. Designing Ordered Organic Small-Molecule Domains for Ultraviolet Detection and Micrometer-Sized Flexible Imaging. NANO LETTERS 2023; 23:8295-8302. [PMID: 37638790 DOI: 10.1021/acs.nanolett.3c02511] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/29/2023]
Abstract
Photodetectors displaying an ultraviolet (UV) spectral response window are typically based on wide-bandgap semiconductors that have long been dominated by inorganic materials that suffer from bottlenecks of low flexibility and a limited material family. Here, we synthesized a novel organic small molecule and controlled its crystallization to suppress leakage currents and facilitate separation of the carriers, and the relationship between the nanoscale phase separation morphology and the optoelectrical performance of the photodetectors is disclosed. Our optimized organic photodetector (OPD) presents a UV spectral response window, with superior self-powered responsivities of 45 mA/W (under 250 nm light) and 70 mA/W (under 300 nm light), outperforming the Si photodiode and rivaling other reported UV self-powered photodetectors. Finally, an imaging system was constructed to demonstrate the application potential of the OPD in UV flexible imaging with high-resolution arrays of 400 pixels × 400 pixels (5 μm × 5 μm per pixel), which could work in bent states and successfully output images of micrometer-sized objects.
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Affiliation(s)
- Tingting Yan
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Institute of Optoelectronics, Fudan University, Shanghai 200438, P. R. China
| | - Jinfeng Ge
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, P. R. China
| | - Li Su
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Institute of Optoelectronics, Fudan University, Shanghai 200438, P. R. China
| | - Xinya Liu
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Institute of Optoelectronics, Fudan University, Shanghai 200438, P. R. China
| | - Xiaosheng Fang
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Institute of Optoelectronics, Fudan University, Shanghai 200438, P. R. China
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Ouyang T, Zhao X, Xun X, Gao F, Zhao B, Bi S, Li Q, Liao Q, Zhang Y. Boosting Charge Utilization in Self-Powered Photodetector for Real-Time High-Throughput Ultraviolet Communication. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2301585. [PMID: 37271884 PMCID: PMC10427366 DOI: 10.1002/advs.202301585] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/14/2023] [Revised: 05/01/2023] [Indexed: 06/06/2023]
Abstract
Ultraviolet (UV) communication is a cutting-edge technology in communication battlefields, and self-powered photodetectors as their optical receivers hold great potential. However, suboptimal charge utilization has largely limited the further performance enhancement of self-powered photodetectors for high-throughput communication application. Herein, a self-powered Ti3 C2 Tx -hybrid poly(3,4 ethylenedioxythiophene):poly-styrene sulfonate (PEDOT:PSS)/ZnO (TPZ) photodetector is designed, which aims to boost charge utilization for desirable applications. The device takes advantage of photothermal effect to intensify pyro-photoelectric effect as well as the increased conductivity of the PEDOT:PSS, which significantly facilitated charge separation, accelerated charge transport, and suppressed interface charge recombination. Consequently, the self-powered TPZ photodetector exhibits superior comprehensive performance with high responsivity of 12.3 mA W-1 and fast response time of 62.2 µs, together with outstanding reversible and stable cyclic operation. Furthermore, the TPZ photodetector has been successfully applied in an integrated UV communication system as the self-powered optical receiver capable of real-time high-throughput information transmission with ASCII code under 9600 baud rate. This work provides the design insight of highly performing self-powered photodetectors to achieve high-efficiency optical communication in the future.
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Affiliation(s)
- Tian Ouyang
- Academy for Advanced Interdisciplinary Science and TechnologyBeijing Advanced Innovation Center for Materials Genome EngineeringUniversity of Science and Technology BeijingBeijing100083P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and TechnologiesSchool of Materials Science and EngineeringUniversity of Science and Technology BeijingBeijing100083P. R. China
| | - Xuan Zhao
- Academy for Advanced Interdisciplinary Science and TechnologyBeijing Advanced Innovation Center for Materials Genome EngineeringUniversity of Science and Technology BeijingBeijing100083P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and TechnologiesSchool of Materials Science and EngineeringUniversity of Science and Technology BeijingBeijing100083P. R. China
| | - Xiaochen Xun
- Academy for Advanced Interdisciplinary Science and TechnologyBeijing Advanced Innovation Center for Materials Genome EngineeringUniversity of Science and Technology BeijingBeijing100083P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and TechnologiesSchool of Materials Science and EngineeringUniversity of Science and Technology BeijingBeijing100083P. R. China
| | - Fangfang Gao
- Academy for Advanced Interdisciplinary Science and TechnologyBeijing Advanced Innovation Center for Materials Genome EngineeringUniversity of Science and Technology BeijingBeijing100083P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and TechnologiesSchool of Materials Science and EngineeringUniversity of Science and Technology BeijingBeijing100083P. R. China
| | - Bin Zhao
- Academy for Advanced Interdisciplinary Science and TechnologyBeijing Advanced Innovation Center for Materials Genome EngineeringUniversity of Science and Technology BeijingBeijing100083P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and TechnologiesSchool of Materials Science and EngineeringUniversity of Science and Technology BeijingBeijing100083P. R. China
| | - Shuxin Bi
- Academy for Advanced Interdisciplinary Science and TechnologyBeijing Advanced Innovation Center for Materials Genome EngineeringUniversity of Science and Technology BeijingBeijing100083P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and TechnologiesSchool of Materials Science and EngineeringUniversity of Science and Technology BeijingBeijing100083P. R. China
| | - Qi Li
- Academy for Advanced Interdisciplinary Science and TechnologyBeijing Advanced Innovation Center for Materials Genome EngineeringUniversity of Science and Technology BeijingBeijing100083P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and TechnologiesSchool of Materials Science and EngineeringUniversity of Science and Technology BeijingBeijing100083P. R. China
| | - Qingliang Liao
- Academy for Advanced Interdisciplinary Science and TechnologyBeijing Advanced Innovation Center for Materials Genome EngineeringUniversity of Science and Technology BeijingBeijing100083P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and TechnologiesSchool of Materials Science and EngineeringUniversity of Science and Technology BeijingBeijing100083P. R. China
| | - Yue Zhang
- Academy for Advanced Interdisciplinary Science and TechnologyBeijing Advanced Innovation Center for Materials Genome EngineeringUniversity of Science and Technology BeijingBeijing100083P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and TechnologiesSchool of Materials Science and EngineeringUniversity of Science and Technology BeijingBeijing100083P. R. China
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Lu H, Wu W, He Z, Han X, Pan C. Recent progress in construction methods and applications of perovskite photodetector arrays. NANOSCALE HORIZONS 2023; 8:1014-1033. [PMID: 37337833 DOI: 10.1039/d3nh00119a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/21/2023]
Abstract
Metal halide perovskites are considered promising materials for next-generation optoelectronic devices due to their excellent optoelectronic performances and simple solution preparation process. Precise micro/nano-scale patterning techniques enable perovskite materials to be used for array integration of photodetectors. In this review, the device types of perovskite-based photodetectors are introduced and the structural characteristics and corresponding device performances are analyzed. Then, the typical construction methods suitable for the fabrication of perovskite photodetector arrays are highlighted, including surface treatment technology, template-assisted construction, inkjet printing technology, and modified photolithography. Furthermore, the current development trends and their applications in image sensing of perovskite photodetector arrays are summarized. Finally, major challenges are presented to guide the development of perovskite photodetector arrays.
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Affiliation(s)
- Hui Lu
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, P. R. China.
| | - Wenqiang Wu
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Zeping He
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, P. R. China.
| | - Xun Han
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, School of Micro-Nano Electronics, Zhejiang University, Hangzhou 311200, China.
| | - Caofeng Pan
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, P. R. China.
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Nguyen TMH, Bark CW. Self-Powered UVC Photodetector Based on Europium Metal-Organic Framework for Facile Monitoring Invisible Fire. ACS APPLIED MATERIALS & INTERFACES 2022; 14:45573-45581. [PMID: 36178426 DOI: 10.1021/acsami.2c13231] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
The effective use of a europium metal-organic framework (Eu-MOF) as a photoabsorber material has been reported. Using the advantages of Eu-MOFs including simple preparation, wide bandgap structure, and stability in the environment, a self-powered and high UVC-selectivity detector based on Eu-MOF nanoparticles was prepared with a simple device geometry. The as-fabricated photodetector was highly sensitive to 254 nm UV illumination without an external power supply. Accordingly, it exhibited a high UVC-to-UVA rejection ratio (I254/I365 ≈ 40) and UVC-to-solar rejection ratio (I254/Isolar light ≈ 34), a fast response time of 98/122 ms, a comparable on/off photocurrent ratio (107.33), and superior stability. The self-powered Eu-MOF photodetector can detect and monitor UV emission from an invisible fire in an early state at room temperature, suggesting practical use as a potential optoelectronic device.
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Affiliation(s)
- Thi My Huyen Nguyen
- Department of Electrical Engineering, Gachon University, 1342 Seongnam-daero, Sujeong-gu, Seongnam-si, Gyeonggi-do13120, South Korea
| | - Chung Wung Bark
- Department of Electrical Engineering, Gachon University, 1342 Seongnam-daero, Sujeong-gu, Seongnam-si, Gyeonggi-do13120, South Korea
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Choi GI, Choi HW. A Study to Improve the Performance of Mixed Cation-Halide Perovskite-Based UVC Photodetectors. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:1132. [PMID: 35407256 PMCID: PMC9000257 DOI: 10.3390/nano12071132] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/28/2022] [Revised: 03/25/2022] [Accepted: 03/26/2022] [Indexed: 01/17/2023]
Abstract
Photodetectors convert optical signals into electrical signals and demonstrate application potential in various fields, such as optical communication, image detection, environmental monitoring, and optoelectronics. In this study, a mixed cation-halide perovskite-based ultraviolet C photodetector was fabricated using a solution process. The higher the mobility of the perovskite carrier, which is one of the factors affecting the performance of electronic power devices, the better the carrier diffusion. The on/off ratio and responsivity indicate the sensitivity of the response, and together with the detectivity and external quantum efficiency, these parameters demonstrate the performance of the detector. The detector fabricated in this study exhibited a mobility of 202.2 cm2/Vs and a high on/off ratio of 105% at a -2 V bias, under 254 nm light irradiation with an intensity of 0.6 mW/cm2. The responsivity, detectivity, and external quantum efficiency of the as-fabricated detector were 5.07 mA/W, 5.49 × 1011 Jones, and 24.8%, respectively. These findings demonstrate that the solution process employed in this study is suitable for the fabrication of mixed cation-halide perovskites which show immense potential for use as photodetectors.
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Affiliation(s)
| | - Hyung Wook Choi
- Department of Electrical Engineering, Gachon University, 1342 Seongnam-daero, Seongnam-si 13120, Korea;
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Yu J, Zheng J, Tian N, Li L, Qu Y, Huang Y, Luo Y, Tan W. High performance of CH 3NH 3PbCl 3 perovskite single crystal photodetector with a large active area using asymmetrical Schottky interdigital contacts. RSC Adv 2022; 12:23578-23583. [PMID: 36090431 PMCID: PMC9386572 DOI: 10.1039/d2ra02976f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/11/2022] [Accepted: 08/11/2022] [Indexed: 11/21/2022] Open
Abstract
The high performance of a Au/CH3NH3PbCl3 single crystal/Ag structured photodetector with a large active area.
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Affiliation(s)
- Ji Yu
- College of Physics Science and Technology, Shenyang Normal University, Shenyang 110034, China
| | - Jie Zheng
- College of Physics Science and Technology, Shenyang Normal University, Shenyang 110034, China
| | - Ning Tian
- College of Physics Science and Technology, Shenyang Normal University, Shenyang 110034, China
| | - Lin Li
- Key Laboratory for Photonic and Electronic Bandgap Materials Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China
| | - Yanmei Qu
- College of Physics Science and Technology, Shenyang Normal University, Shenyang 110034, China
| | - Yongtao Huang
- College of Physics Science and Technology, Shenyang Normal University, Shenyang 110034, China
| | - Yinxian Luo
- College of Physics Science and Technology, Shenyang Normal University, Shenyang 110034, China
| | - Wenzhu Tan
- College of Physics Science and Technology, Shenyang Normal University, Shenyang 110034, China
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