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Sanchez-Diaz J, Rodriguez-Pereira J, Das Adhikari S, Mora-Seró I. Synthesis of Hybrid Tin-Based Perovskite Microcrystals for LED Applications. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2403835. [PMID: 38973344 PMCID: PMC11425840 DOI: 10.1002/advs.202403835] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/11/2024] [Revised: 06/11/2024] [Indexed: 07/09/2024]
Abstract
Considerable focus on tin-based perovskites lies on substitution to leadhalide perovskites for the fabrication of eco-friendly optoelectronic devices. The major concern related to tin-based perovskite devices are mainly the stability and the efficiency. However, thinking on the final commercialization scope, other considerations such as precursor stability and cost are major factors to carry about. In this regard, this work presents a robust and facile synthesis of 2D A2SnX4 (A = 4-fluorophenethylammonium(4-FPEA); X = I, Br, I/Br) and 3D FASnI3 perovskite microcrystals following a developed synthesis strategy with low-cost starting materials. In this developed methodology, acetic acid is used as a solvent, which helps to protect from water by making a hydrophobic network over the perovskite surface, and hence provides sufficient ambient and long-term inert atmosphere stability of the microcrystals. Further, the microcrystals are recrystallized in thin films for LED application, allowing the fabrication of orange, near-infrared and purered emitting LEDs. The two-step recrystallized devices show better performance and stability in comparison to the reference devices made by using commercial precursors. Importantly, the developed synthesis methodology is defined as a generic method for the preparation of varieties of hybrid tin-based perovskites microcrystals and application in optoelectronic devices.
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Affiliation(s)
- Jesus Sanchez-Diaz
- Institute of Advanced Materials (INAM), Universitat Jaume I. Av. de Vicent Sos Baynat, Castellón de la Plana, 12006, Spain
| | - Jhonatan Rodriguez-Pereira
- Center of Materials and Nanotechnologies, Faculty of Chemical Technology, University of Pardubice, Nam. Cs. Legii 565, Pardubice, 53002, Czech Republic
- Central European Institute of Technology, Brno University of Technology, Purkynova 123, Brno, 61200, Czech Republic
| | - Samrat Das Adhikari
- Institute of Advanced Materials (INAM), Universitat Jaume I. Av. de Vicent Sos Baynat, Castellón de la Plana, 12006, Spain
| | - Iván Mora-Seró
- Institute of Advanced Materials (INAM), Universitat Jaume I. Av. de Vicent Sos Baynat, Castellón de la Plana, 12006, Spain
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Chen CH, Yu MH, Wang YY, Tseng YC, Chao IH, Ni IC, Lin BH, Lu YJ, Chueh CC. Enhancing the Performance of 2D Tin-Based Pure Red Perovskite Light-Emitting Diodes through the Synergistic Effect of Natural Antioxidants and Cyclic Molecular Additives. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2307774. [PMID: 38200683 DOI: 10.1002/smll.202307774] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/06/2023] [Revised: 12/27/2023] [Indexed: 01/12/2024]
Abstract
Tin (Sn)-based perovskites are being investigated in many optoelectronic applications given their similar valence electron configuration to that of lead-based perovskites and the potential environmental hazards of lead-based perovskites. However, the formation of high-quality Sn-based perovskite films faces several challenges, mainly due to the easy oxidation of Sn2+ to Sn4+ and the fast crystallization rate. Here, to develop an environmentally friendly process for Sn-based perovskite fabrication, a series of natural antioxidants are studied as additives and ascorbic acid (VitC) is found to have a superior ability to inhibit the oxidation problem. A common cyclic molecule, 18-Crown-6, is further added as a second additive, which synergizes with VitC to significantly reduce the nonradiative recombination pathways in the PEA2SnI4 film. This synergistic effect greatly improves the performance of 2D red Sn-based PeLED, with a maximum external quantum efficiency of 1.87% (≈9 times that of the pristine device), a purer color, and better bias stability. This work demonstrates the potential of the dual-additive approach in enhancing the performance of 2D Sn-based PeLEDs, while the use of these environmentally friendly additives contributes to their future sustainability.
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Affiliation(s)
- Chiung-Han Chen
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan
| | - Ming-Hsuan Yu
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan
| | - Yen-Yu Wang
- Research Center for Applied Sciences, Academia Sinica, Taipei, 11529, Taiwan
| | - Yu-Cheng Tseng
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan
| | - I-Hsiang Chao
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan
| | - I-Chih Ni
- Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, 10617, Taiwan
| | - Bi-Hsuan Lin
- National Synchrotron Radiation Research Center, Hsinchu, 30076, Taiwan
| | - Yu-Jung Lu
- Research Center for Applied Sciences, Academia Sinica, Taipei, 11529, Taiwan
| | - Chu-Chen Chueh
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan
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Min H, Wang N, Chen N, Tong Y, Wang Y, Wang J, Liu J, Wang S, Wu X, Yang P, Shi H, Zhuo C, Chen Q, Li J, Zhang D, Lu X, Zhu C, Peng Q, Zhu L, Chang J, Huang W, Wang J. Spin coating epitaxial heterodimensional tin perovskites for light-emitting diodes. NATURE NANOTECHNOLOGY 2024; 19:632-637. [PMID: 38216685 DOI: 10.1038/s41565-023-01588-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/21/2023] [Accepted: 11/29/2023] [Indexed: 01/14/2024]
Abstract
Environmentally friendly tin (Sn) perovskites have received considerable attention due to their great potential for replacing their toxic lead counterparts in applications of photovoltaics and light-emitting diodes (LEDs). However, the device performance of Sn perovskites lags far behind that of lead perovskites, and the highest reported external quantum efficiencies of near-infrared Sn perovskite LEDs are below 10%. The poor performance stems mainly from the numerous defects within Sn perovskite crystallites and grain boundaries, leading to serious non-radiative recombination. Various epitaxy methods have been introduced to obtain high-quality perovskites, although their sophisticated processes limit the scalable fabrication of functional devices. Here we demonstrate that epitaxial heterodimensional Sn perovskite films can be fabricated using a spin-coating process, and efficient LEDs with an external quantum efficiency of 11.6% can be achieved based on these films. The film is composed of a two-dimensional perovskite layer and a three-dimensional perovskite layer, which is highly ordered and has a well-defined interface with minimal interfacial areas between the different dimensional perovskites. This unique nanostructure is formed through direct spin coating of the perovskite precursor solution with tryptophan and SnF2 additives onto indium tin oxide glass. We believe that our approach will provide new opportunities for further developing high-performance optoelectronic devices based on heterodimensional perovskites.
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Affiliation(s)
- Hao Min
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Nana Wang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Nana Chen
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Yunfang Tong
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Yujiao Wang
- Multi-scale Porous Materials Center, Institute of Advanced Interdisciplinary Studies & School of Chemistry and Chemical Engineering, Chongqing University, Chongqing, China
| | - Jiaqi Wang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Jinglong Liu
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Saixue Wang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Xiao Wu
- Department of Physics, The Chinese University of Hong Kong, Hong Kong, China
| | - Pinghui Yang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Haokun Shi
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Chunxue Zhuo
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Qi Chen
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Jingwei Li
- Multi-scale Porous Materials Center, Institute of Advanced Interdisciplinary Studies & School of Chemistry and Chemical Engineering, Chongqing University, Chongqing, China
| | - Daliang Zhang
- Multi-scale Porous Materials Center, Institute of Advanced Interdisciplinary Studies & School of Chemistry and Chemical Engineering, Chongqing University, Chongqing, China
| | - Xinhui Lu
- Department of Physics, The Chinese University of Hong Kong, Hong Kong, China
| | - Chao Zhu
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Southeast University, Nanjing, China
| | - Qiming Peng
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Lin Zhu
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Jin Chang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China.
| | - Wei Huang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China.
- Shaanxi Institute of Flexible Electronics (SIFE), Xi'an Institute of Biomedical Materials & Engineering (IBME), Northwestern Polytechnical University (NPU), Xi'an, China.
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, China.
- Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University, Fuzhou, China.
| | - Jianpu Wang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China.
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, China.
- Changzhou University, Changzhou, China.
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Bai W, Liang M, Xuan T, Gong T, Bian L, Li H, Xie RJ. Ligand Engineering Enables Efficient Pure Red Tin-Based Perovskite Light-Emitting Diodes. Angew Chem Int Ed Engl 2023; 62:e202312728. [PMID: 37888877 DOI: 10.1002/anie.202312728] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/29/2023] [Revised: 10/19/2023] [Accepted: 10/27/2023] [Indexed: 10/28/2023]
Abstract
With increasing ecological and environmental concerns, tin (Sn)-based perovskite light-emitting diodes (PeLEDs) are competitive candidates for future displays because of their environmental friendliness, excellent photoelectric properties, and low-cost solution-processed fabrication. Nonetheless, their electroluminescence (EL) performance still lags behind that of lead (Pb)-based PeLEDs due to the fast crystallization rate of Sn-based perovskite films and undesired oxidation from Sn2+ to Sn4+ , leading to poor film morphology and coverage, as well as high density defects. Here, we propose a ligand engineering strategy to construct high-quality phenethylammonium tin iodide (PEA2 SnI4 ) perovskite films by using L-glutathione reduced (GSH) as surface ligands toward efficient pure red PEA2 SnI4 -based PeLEDs. We show that the hydrogen-bond and coordinate interactions between GSH and PEA2 SnI4 effectively reduce the crystallization rate of the perovskites and suppress the oxidation of Sn2+ and formation of defects. The improved pure red perovskite films not only show excellent uniformity, density, and coverage but also exhibit enhanced optical properties and stability. Finally, state-of-the-art pure red PeLEDs achieve a record external quantum efficiency of 9.32 % in the field of PEA2 SnI4 -based devices. This work demonstrates that ligand engineering represents a feasible route to enhance the EL performance of Sn-based PeLEDs.
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Affiliation(s)
- Wenhao Bai
- Fujian Key Laboratory of Surface and Interface Engineering for High Performance Materials, College of Materials, Xiamen University, Xiamen, 361005, P. R. China
| | - Mingming Liang
- Fujian Key Laboratory of Surface and Interface Engineering for High Performance Materials, College of Materials, Xiamen University, Xiamen, 361005, P. R. China
| | - Tongtong Xuan
- Fujian Key Laboratory of Surface and Interface Engineering for High Performance Materials, College of Materials, Xiamen University, Xiamen, 361005, P. R. China
- Shenzhen Research Institute of Xiamen University, Shenzhen, 518000, P. R. China
| | - Ting Gong
- Fujian Key Laboratory of Surface and Interface Engineering for High Performance Materials, College of Materials, Xiamen University, Xiamen, 361005, P. R. China
| | - Liang Bian
- State Key Laboratory of Environment-friendly Energy Materials, Southwest University of Science and Technology, Sichuan, 621010, P. R. China
| | - Huili Li
- Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, P. R. China
| | - Rong-Jun Xie
- Fujian Key Laboratory of Surface and Interface Engineering for High Performance Materials, College of Materials, Xiamen University, Xiamen, 361005, P. R. China
- State Key Laboratory of Physical Chemistry of Solid Surfaces, Xiamen, 361005, P. R. China
- Shenzhen Research Institute of Xiamen University, Shenzhen, 518000, P. R. China
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Kim DY, Jung JG, Lee YJ, Park MH. Lead-Free Halide Perovskite Nanocrystals for Light-Emitting Diodes. MATERIALS (BASEL, SWITZERLAND) 2023; 16:6317. [PMID: 37763594 PMCID: PMC10532894 DOI: 10.3390/ma16186317] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/13/2023] [Revised: 09/11/2023] [Accepted: 09/18/2023] [Indexed: 09/29/2023]
Abstract
Lead-based halide perovskite nanocrystals (PeNCs) have demonstrated remarkable potential for use in light-emitting diodes (LEDs). This is because of their high photoluminescence quantum yield, defect tolerance, tunable emission wavelength, color purity, and high device efficiency. However, the environmental toxicity of Pb has impeded their commercial viability owing to the restriction of hazardous substances directive. Therefore, Pb-free PeNCs have emerged as a promising solution for the development of eco-friendly LEDs. This review article presents a detailed analysis of the various compositions of Pb-free PeNCs, including tin-, bismuth-, antimony-, and copper-based perovskites and double perovskites, focusing on their stability, optoelectronic properties, and device performance in LEDs. Furthermore, we address the challenges encountered in using Pb-free PeNC-LEDs and discuss the prospects and potential of these Pb-free PeNCs as sustainable alternatives to lead-based PeLEDs. In this review, we aim to shed light on the current state of Pb-free PeNC LEDs and highlight their significance in driving the development of eco-friendly LED technologies.
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Affiliation(s)
- Do-Young Kim
- Department of Materials Science and Engineering, Soongsil University, 369 Sangdo-ro, Dongjak-gu, Seoul 06978, Republic of Korea; (D.-Y.K.); (J.-G.J.); (Y.-J.L.)
- Department of Green Chemistry and Materials Engineering, Soongsil University, 369 Sangdo-ro, Dongjak-gu, Seoul 06978, Republic of Korea
| | - Jae-Geun Jung
- Department of Materials Science and Engineering, Soongsil University, 369 Sangdo-ro, Dongjak-gu, Seoul 06978, Republic of Korea; (D.-Y.K.); (J.-G.J.); (Y.-J.L.)
- Department of Green Chemistry and Materials Engineering, Soongsil University, 369 Sangdo-ro, Dongjak-gu, Seoul 06978, Republic of Korea
| | - Ye-Ji Lee
- Department of Materials Science and Engineering, Soongsil University, 369 Sangdo-ro, Dongjak-gu, Seoul 06978, Republic of Korea; (D.-Y.K.); (J.-G.J.); (Y.-J.L.)
| | - Min-Ho Park
- Department of Materials Science and Engineering, Soongsil University, 369 Sangdo-ro, Dongjak-gu, Seoul 06978, Republic of Korea; (D.-Y.K.); (J.-G.J.); (Y.-J.L.)
- Department of Green Chemistry and Materials Engineering, Soongsil University, 369 Sangdo-ro, Dongjak-gu, Seoul 06978, Republic of Korea
- Integrative Institute of Basic Science, Soongsil University, 369 Sangdo-ro, Dongjak-gu, Seoul 06978, Republic of Korea
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He J, Wang S, Li X, Zhang F. Seeding Agents in Metal Halide Perovskite Solar Cells: From Material to Mechanism. CHEMSUSCHEM 2023; 16:e202202109. [PMID: 36624051 DOI: 10.1002/cssc.202202109] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/10/2022] [Revised: 01/05/2023] [Indexed: 06/17/2023]
Abstract
Metal halide perovskite solar cells (PSCs) have been showing up in the commercial field, with an inspiring power conversion efficiency (PCE) of over 26 % in the laboratory. The quality of perovskite films is still a bottleneck due to the random and fast crystallization of ionic perovskite materials. Seeding agent-mediated crystallization has consistently been recognized as an efficient method for preparing bulk single crystals and high-quality films. Herein, we summarized the seeding mechanism, characterization techniques, and seeding agents working in different locations during PSC device fabrication. This Review could further facilitate researchers with a deeper understanding of seeding agents and enhance more choices for seeding crystallization to improve the performance further and the device's large-scale fabrication toward commercialization.
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Affiliation(s)
- Jun He
- School of Chemical Engineering and Technology, Tianjin University, Tianjin, 300072, P. R. China
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, P. R. China
| | - Shirong Wang
- School of Chemical Engineering and Technology, Tianjin University, Tianjin, 300072, P. R. China
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, P. R. China
| | - Xianggao Li
- School of Chemical Engineering and Technology, Tianjin University, Tianjin, 300072, P. R. China
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, P. R. China
| | - Fei Zhang
- School of Chemical Engineering and Technology, Tianjin University, Tianjin, 300072, P. R. China
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, P. R. China
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Lanzetta L, Webb T, Marin‐Beloqui JM, Macdonald TJ, Haque SA. Halide Chemistry in Tin Perovskite Optoelectronics: Bottlenecks and Opportunities. Angew Chem Int Ed Engl 2023; 62:e202213966. [PMID: 36369761 PMCID: PMC10107305 DOI: 10.1002/anie.202213966] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/21/2022] [Revised: 11/07/2022] [Accepted: 11/07/2022] [Indexed: 11/13/2022]
Abstract
Tin halide perovskites (Sn HaPs) are the top lead-free choice for perovskite optoelectronics, but the oxidation of perovskite Sn2+ to Sn4+ remains a key challenge. However, the role of inconspicuous chemical processes remains underexplored. Specifically, the halide component in Sn HaPs (typically iodide) has been shown to play a key role in dictating device performance and stability due to its high reactivity. Here we describe the impact of native halide chemistry on Sn HaPs. Specifically, molecular halogen formation in Sn HaPs and its influence on degradation is reviewed, emphasising the benefits of iodide substitution for improving stability. Next, the ecological impact of halide products of Sn HaP degradation and its mitigation are considered. The development of visible Sn HaP emitters via halide tuning is also summarised. Lastly, halide defect management and interfacial engineering for Sn HaP devices are discussed. These insights will inspire efficient and robust Sn HaP optoelectronics.
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Affiliation(s)
- Luis Lanzetta
- Physical Science and Engineering DivisionKAUST Solar Center (KSC)King Abdullah University of Science and Technology (KAUST)Thuwal23955-6900Saudi Arabia
| | - Thomas Webb
- Department of Chemistry and Centre for Processable ElectronicsMolecular Sciences Research HubImperial College LondonLondonW12 0BZUK
| | - Jose Manuel Marin‐Beloqui
- Department of Physical ChemistryUniversity of MálagaAndalucia-Tech Campus de Teatinos s/n29071MálagaSpain
| | - Thomas J. Macdonald
- Department of Chemistry and Centre for Processable ElectronicsMolecular Sciences Research HubImperial College LondonLondonW12 0BZUK
- School of Engineering and Materials ScienceQueen Mary University of LondonLondonE1 4NSUK
| | - Saif A. Haque
- Department of Chemistry and Centre for Processable ElectronicsMolecular Sciences Research HubImperial College LondonLondonW12 0BZUK
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