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Chen L, Fu S, Li Y, Sun N, Yan Y, Song Z. On the Durability of Tin-Containing Perovskite Solar Cells. Adv Sci (Weinh) 2024; 11:e2304811. [PMID: 37968252 PMCID: PMC10767427 DOI: 10.1002/advs.202304811] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/15/2023] [Revised: 09/20/2023] [Indexed: 11/17/2023]
Abstract
Tin (Sn)-containing perovskite solar cells (PSCs) have gained significant attention in the field of perovskite optoelectronics due to lower toxicity than their lead-based counterparts and their potential for tandem applications. However, the lack of stability is a major concern that hampers their development. To achieve the long-term stability of Sn-containing PSCs, it is crucial to have a clear and comprehensive understanding of the degradation mechanisms of Sn-containing perovskites and develop mitigation strategies. This review provides a compendious overview of degradation pathways observed in Sn-containing perovskites, attributing to intrinsic factors related to the materials themselves and environmental factors such as light, heat, moisture, oxygen, and their combined effects. The impact of interface and electrode materials on the stability of Sn-containing PSCs is also discussed. Additionally, various strategies to mitigate the instability issue of Sn-containing PSCs are summarized. Lastly, the challenges and prospects for achieving durable Sn-containing PSCs are presented.
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Affiliation(s)
- Lei Chen
- Department of Physics and Astronomy and Wright Center for Photovoltaics Innovation and CommercializationThe University of Toledo2801 W. Bancroft StreetToledoOH43606USA
| | - Sheng Fu
- Department of Physics and Astronomy and Wright Center for Photovoltaics Innovation and CommercializationThe University of Toledo2801 W. Bancroft StreetToledoOH43606USA
| | - You Li
- Department of Physics and Astronomy and Wright Center for Photovoltaics Innovation and CommercializationThe University of Toledo2801 W. Bancroft StreetToledoOH43606USA
| | - Nannan Sun
- Department of Physics and Astronomy and Wright Center for Photovoltaics Innovation and CommercializationThe University of Toledo2801 W. Bancroft StreetToledoOH43606USA
| | - Yanfa Yan
- Department of Physics and Astronomy and Wright Center for Photovoltaics Innovation and CommercializationThe University of Toledo2801 W. Bancroft StreetToledoOH43606USA
| | - Zhaoning Song
- Department of Physics and Astronomy and Wright Center for Photovoltaics Innovation and CommercializationThe University of Toledo2801 W. Bancroft StreetToledoOH43606USA
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2
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Li M, He Y, Feng X, Qu W, Wei W, Yang B, Wei H. Reductant Engineering in Stable and High-Quality Tin Perovskite Single Crystal Growth for Heterojunction X-Ray Detectors. Adv Mater 2023; 35:e2307042. [PMID: 37792825 DOI: 10.1002/adma.202307042] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/17/2023] [Revised: 09/08/2023] [Indexed: 10/06/2023]
Abstract
Tin perovskites have emerged as a promising alternative material to address the toxicity of lead perovskites and the low bandgap of around 1.1 eV is also compatible with tandem solar cell applications. Nevertheless, the optoelectronic performance of solution-processed tin perovskite single-crystal counterparts still lags behind because of the tin instability under ambient conditions during crystal growth and limited reductants to protect the Sn2+ ions from oxidation. Here, the reductant engineering to grow high-quality tin perovskite single crystals under ambient conditions is studied. Oxalic acid (H2 C2 O4 ) serves as an excellent reductant and sacrificial agent to protect Sn2+ ions in methanol due to its suitable redox potential of -0.49 V, and the CO2 as the oxidation product in the gas state can be easily separated from the solution. The FPEA2 SnI4 single crystal grown by this strategy exhibits low trap density perovskite surface by constructing an FPEA2 PbI4 -FPEA2 SnI4 (FPI-FSI) single crystal heterojunction for X-ray detection. An improved X-ray sensitivity of 1.7 × 105 µC Gy-1 cm-2 is realized in the heterojunction device, outperforming the control FPEA2 PbI4 counterpart.
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Affiliation(s)
- Mingbian Li
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China
| | - Yuhong He
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China
| | - Xiaopeng Feng
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China
| | - Wei Qu
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China
| | - Wei Wei
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, P. R. China
| | - Bai Yang
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China
- Optical Functional Theragnostic Joint Laboratory of Medicine and Chemistry, The First Hospital of Jilin University, Changchun, 130012, P. R. China
| | - Haotong Wei
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China
- Optical Functional Theragnostic Joint Laboratory of Medicine and Chemistry, The First Hospital of Jilin University, Changchun, 130012, P. R. China
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3
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Rajamanickam P, Narra S, Seetharaman A, Diau EWG. Highly Efficient HTM-Free Tin Perovskite Solar Cells with Outstanding Stability Exceeding 10000 h. ACS Appl Mater Interfaces 2023; 15:40700-40708. [PMID: 37589680 DOI: 10.1021/acsami.3c10268] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/18/2023]
Abstract
The bottleneck in the rapid development of tin-based perovskite solar cells (TPSCs) is the inherent chemical instability. Although this is being addressed continuously, the device performance has not improved further due to the use of PEDOT:PSS as the hole-transport material (HTM), which has poor long-term stability. Herein we have applied commercial ITO nanoparticles over ITO glass substrates and altered the surface chemistry of the ITO electrode via a simple two-step thermal annealing, followed by a UV-ozone treatment. These surface-modified ITO electrodes display promising interfacial characteristics, such as a suitable band alignment owing to significantly reduced surface carbon contamination, increased In-O bonding, and reduced oxygen vacancies, that enabled fabrication of an HTM-free TPSC device according to a two-step method. The fabricated device possessed an outstanding power conversion efficiency (PCE) of 9.7%, along with a superior long-term stability by retaining over 90% of the initial PCE upon shelf storage in a glovebox for a period of over 10000 h. The application of ITO nanoparticles led to effective interfacial passivation, whose impacts on the long-term durability were assessed using electrochemical impedance spectroscopy, time-resolved photoluminescence decay profiles, and femtosecond transient absorption spectroscopy techniques.
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Affiliation(s)
- Parameswaran Rajamanickam
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, 1001 Ta-Hseuh Rd., Hsinchu 300093, Taiwan
| | - Sudhakar Narra
- Department of Applied Chemistry and Institute of Molecular Science, National Yang Ming Chiao Tung University, 1001 Ta-Hseuh Rd., Hsinchu 300093, Taiwan
- Center for Emergent Functional Matter Science, National Yang Ming Chiao Tung University, 1001 Ta-Hseuh Rd., Hsinchu 300093, Taiwan
| | - Ashank Seetharaman
- Department of Applied Chemistry and Institute of Molecular Science, National Yang Ming Chiao Tung University, 1001 Ta-Hseuh Rd., Hsinchu 300093, Taiwan
| | - Eric Wei-Guang Diau
- Department of Applied Chemistry and Institute of Molecular Science, National Yang Ming Chiao Tung University, 1001 Ta-Hseuh Rd., Hsinchu 300093, Taiwan
- Center for Emergent Functional Matter Science, National Yang Ming Chiao Tung University, 1001 Ta-Hseuh Rd., Hsinchu 300093, Taiwan
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4
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Ayaydah W, Raddad E, Hawash Z. Sn-Based Perovskite Solar Cells towards High Stability and Performance. Micromachines (Basel) 2023; 14:806. [PMID: 37421039 DOI: 10.3390/mi14040806] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/09/2023] [Revised: 03/29/2023] [Accepted: 03/30/2023] [Indexed: 07/09/2023]
Abstract
Recent years have witnessed rapid development in the field of tin-based perovskite solar cells (TPSCs) due to their environmental friendliness and tremendous potential in the photovoltaic field. Most of the high-performance PSCs are based on lead as the light-absorber material. However, the toxicity of lead and the commercialization raise concerns about potential health and environmental hazards. TPSCs can maintain all the optoelectronic properties of lead PSCs, as well as feature a favorable smaller bandgap. However, TPSCs tend to undergo rapid oxidation, crystallization, and charge recombination, which make it difficult to unlock the full potential of such perovskites. Here, we shed light on the most critical features and mechanisms affecting the growth, oxidation, crystallization, morphology, energy levels, stability, and performance of TPSCs. We also investigate the recent strategies, such as interfaces and bulk additives, built-in electric field, and alternative charge transport materials that are used to enhance the performance of the TPSCs. More importantly, we have summarized most of the recent best-performing lead-free and lead-mixed TPSCs. This review aims to help future research in TPSCs to produce highly stable and efficient solar cells.
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Affiliation(s)
- Wafa' Ayaydah
- Department of Physics, Birzeit University, Birzeit, Ramallah 71939, Palestine
| | - Eman Raddad
- Department of Physics, Birzeit University, Birzeit, Ramallah 71939, Palestine
| | - Zafer Hawash
- Department of Physics, Birzeit University, Birzeit, Ramallah 71939, Palestine
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Alvarado-Leaños AL, Cortecchia D, Saggau CN, Martani S, Folpini G, Feltri E, Albaqami MD, Ma L, Petrozza A. Lasing in Two-Dimensional Tin Perovskites. ACS Nano 2022; 16:20671-20679. [PMID: 36420860 PMCID: PMC9798858 DOI: 10.1021/acsnano.2c07705] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/02/2022] [Accepted: 11/14/2022] [Indexed: 06/16/2023]
Abstract
Two-dimensional (2D) perovskites have been proposed as materials capable of improving the stability and surpassing the radiative recombination efficiency of three-dimensional perovskites. However, their luminescent properties have often fallen short of what has been expected. In fact, despite attracting considerable attention for photonic applications during the last two decades, lasing in 2D perovskites remains unclear and under debate. Here, we were able to improve the optical gain properties of 2D perovskite and achieve optically pumped lasing. We show that the choice of the spacer cation affects the defectivity and photostability of the perovskite, which in turn influences its optical gain. Based on our synthetic strategy, we obtain PEA2SnI4 films with high crystallinity and favorable optical properties, resulting in amplified spontaneous emission (ASE) with a low threshold (30 μJ/cm2), a high optical gain above 4000 cm-1 at 77 K, and ASE operation up to room temperature.
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Affiliation(s)
- Ada Lilí Alvarado-Leaños
- Istituto
Italiano de Tecnologia, Centre for Nano Science and Technology (CNST@PoliMi), Milan20133, Italy
- Physics
Department, Politecnico di Milano, Piazza Leonardo da Vinci 32, Milan20133, Italy
| | - Daniele Cortecchia
- Istituto
Italiano de Tecnologia, Centre for Nano Science and Technology (CNST@PoliMi), Milan20133, Italy
| | | | - Samuele Martani
- Istituto
Italiano de Tecnologia, Centre for Nano Science and Technology (CNST@PoliMi), Milan20133, Italy
| | - Giulia Folpini
- Istituto
Italiano de Tecnologia, Centre for Nano Science and Technology (CNST@PoliMi), Milan20133, Italy
| | - Elena Feltri
- Istituto
Italiano de Tecnologia, Centre for Nano Science and Technology (CNST@PoliMi), Milan20133, Italy
- Physics
Department, Politecnico di Milano, Piazza Leonardo da Vinci 32, Milan20133, Italy
| | - Munirah D. Albaqami
- Chemistry
Department, College of Science, King Saud
University, Riyadh11451, Saudi Arabia
| | - Libo Ma
- Institute
for Integrative Nanosciences, Leibniz IFW
Dresden, Dresden01069, Germany
| | - Annamaria Petrozza
- Istituto
Italiano de Tecnologia, Centre for Nano Science and Technology (CNST@PoliMi), Milan20133, Italy
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6
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Macdonald TJ, Lanzetta L, Liang X, Ding D, Haque SA. Engineering Stable Lead-Free Tin Halide Perovskite Solar Cells: Lessons from Materials Chemistry. Adv Mater 2022:e2206684. [PMID: 36458662 DOI: 10.1002/adma.202206684] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/22/2022] [Revised: 10/24/2022] [Indexed: 06/17/2023]
Abstract
Substituting toxic lead with tin (Sn) in perovskite solar cells (PSCs) is the most promising route toward the development of high-efficiency lead-free devices. Despite the encouraging efficiencies of Sn-PSCs, they are still yet to surpass 15% and suffer detrimental oxidation of Sn(II) to Sn(IV). Since their first application in 2014, investigations into the properties of Sn-PSCs have contributed to a growing understanding of the mechanisms, both detrimental and complementary to their stability. This review summarizes the evolution of Sn-PSCs, including early developments to the latest state-of-the-art approaches benefitting the stability of devices. The degradation pathways associated with Sn-PSCs are first outlined, followed by describing how composition engineering (A, B site modifications), additive engineering (oxidation prevention), and interface engineering (passivation strategies) can be employed as different avenues to improve the stability of devices. The knowledge about these properties is also not limited to PSCs and also applicable to other types of devices now employing Sn-based perovskite absorber layers. A detailed analysis of the properties and materials chemistry reveals a clear set of design rules for the development of stable Sn-PSCs. Applying the design strategies highlighted in this review will be essential to further improve both the efficiency and stability of Sn-PSCs.
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Affiliation(s)
- Thomas J Macdonald
- Department of Chemistry, Imperial College London, Wood Lane, W12 0BZ, UK
- Centre for Processable Electronics, Imperial College London, London, SW7 2AZ, UK
| | - Luis Lanzetta
- Department of Chemistry, Imperial College London, Wood Lane, W12 0BZ, UK
- Centre for Processable Electronics, Imperial College London, London, SW7 2AZ, UK
| | - Xinxing Liang
- Department of Chemistry, Imperial College London, Wood Lane, W12 0BZ, UK
- Centre for Processable Electronics, Imperial College London, London, SW7 2AZ, UK
| | - Dong Ding
- Department of Chemistry, Imperial College London, Wood Lane, W12 0BZ, UK
- Centre for Processable Electronics, Imperial College London, London, SW7 2AZ, UK
| | - Saif A Haque
- Department of Chemistry, Imperial College London, Wood Lane, W12 0BZ, UK
- Centre for Processable Electronics, Imperial College London, London, SW7 2AZ, UK
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7
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Zhang F, Min H, Zhang Y, Kuang Z, Wang J, Feng Z, Wen K, Xu L, Yang C, Shi H, Zhuo C, Wang N, Chang J, Huang W, Wang J. Vapor-Assisted In Situ Recrystallization for Efficient Tin-Based Perovskite Light-Emitting Diodes. Adv Mater 2022; 34:e2203180. [PMID: 35906760 DOI: 10.1002/adma.202203180] [Citation(s) in RCA: 14] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/08/2022] [Revised: 06/10/2022] [Indexed: 06/15/2023]
Abstract
Tin-based perovskites are a promising candidates to replace their toxic lead-based counterparts in optoelectronic applications, such as light-emitting diodes (LEDs). However, the development of tin perovskite LEDs is slow due to the challenge of obtaining high-quality tin perovskite films. Here, a vapor-assisted spin-coating method is developed to achieve high-quality tin perovskites and high-efficiency LEDs. It is revealed that solvent vapor can lead to in situ recrystallization of tin perovskites during the film-formation process, thus significantly improving the crystalline quality with reduced defects. An antioxidant additive is further introduced to suppress the oxidation of Sn2+ and increase the photoluminescence quantum efficiency up to ≈30%, which is an approximately fourfold enhancement in comparison with that of the control method. As a result, efficient tin perovskite LEDs are achieved with a peak external quantum efficiency of 5.3%, which is among the highest efficiency of lead-free perovskite LEDs.
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Affiliation(s)
- Fang Zhang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, Jiangsu, 211816, China
| | - Hao Min
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, Jiangsu, 211816, China
| | - Ya Zhang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, Jiangsu, 211816, China
| | - Zhiyuan Kuang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, Jiangsu, 211816, China
| | - Jiaqi Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, Jiangsu, 211816, China
| | - Ziqian Feng
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, Jiangsu, 211816, China
| | - Kaichuan Wen
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, Jiangsu, 211816, China
| | - Lei Xu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, Jiangsu, 211816, China
| | - Chao Yang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, Jiangsu, 211816, China
| | - Haokun Shi
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, Jiangsu, 211816, China
| | - Chunxue Zhuo
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, Jiangsu, 211816, China
| | - Nana Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, Jiangsu, 211816, China
| | - Jin Chang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, Jiangsu, 211816, China
| | - Wei Huang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, Jiangsu, 211816, China
- Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an, Shaanxi, 710072, China
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, Fujian, 350117, China
| | - Jianpu Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, Jiangsu, 211816, China
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, Fujian, 350117, China
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8
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Cai S, Ju Y, Wang Y, Li X, Guo T, Zhong H, Huang L. Fast-Response Oxygen Optical Fiber Sensor based on PEA 2 SnI 4 Perovskite with Extremely Low Limit of Detection. Adv Sci (Weinh) 2022; 9:e2104708. [PMID: 35038240 PMCID: PMC8922120 DOI: 10.1002/advs.202104708] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/26/2021] [Indexed: 06/14/2023]
Abstract
Oxygen sensor is an important technique in various applications including industrial process control, medical equipment, biological fabrication, etc. The reported optical fiber-based configurations so far, using gas-sensitive coating do not meet the stringent performance targets, such as fast response time and low limit of detection (LOD). Tin-based halide perovskites are sensitive to oxygen with potential use for sensor applications. Here, the halide perovskite-based oxygen optical fiber sensor by combining phenylethylammonium tin iodide (PEA2 SnI4 ) and tilted fiber Bragg grating (TFBG) is demonstrated. The PEA2 SnI4 -based oxygen optical fiber sensor is reversible at room temperature with a response time of about 10 s, and the experimental LOD approaches to an extremely low oxygen concentration of about 50 ppm. The as-fabricated oxygen sensor shows a relative response change of 0.6 dB for an oxygen concentration increase from 50 ppm to 5% with good gas selection against NO2 , CO, CO2 , H2 . This work extends the sensor applications of halide perovskites, providing a novel technique for rapid and repeatable oxygen gas detection at a low level.
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Affiliation(s)
- Shunshuo Cai
- Beijing Engineering Research Center of Mixed Reality and Advanced DisplaySchool of Optics and PhotonicsBeijing Institute of TechnologyBeijing100081China
| | - Yangyang Ju
- MIIT Key Laboratory for Low‐dimensional Quantum Structure and DevicesSchool of Materials Science & EngineeringBeijing Institute of TechnologyBeijing100081China
| | - Yangming Wang
- MIIT Key Laboratory for Low‐dimensional Quantum Structure and DevicesSchool of Materials Science & EngineeringBeijing Institute of TechnologyBeijing100081China
| | - Xiaowei Li
- Laser Micro/Nano‐Fabrication LaboratorySchool of Mechanical EngineeringBeijing Institute of TechnologyBeijing100081China
| | - Tuan Guo
- Institute of Photonics TechnologyJinan UniversityGuangzhou510632China
| | - Haizheng Zhong
- MIIT Key Laboratory for Low‐dimensional Quantum Structure and DevicesSchool of Materials Science & EngineeringBeijing Institute of TechnologyBeijing100081China
| | - Lingling Huang
- Beijing Engineering Research Center of Mixed Reality and Advanced DisplaySchool of Optics and PhotonicsBeijing Institute of TechnologyBeijing100081China
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Lin JT, Hu YK, Hou CH, Liao CC, Chuang WT, Chiu CW, Tsai MK, Shyue JJ, Chou PT. Superior Stability and Emission Quantum Yield (23% ± 3%) of Single-Layer 2D Tin Perovskite TEA 2 SnI 4 via Thiocyanate Passivation. Small 2020; 16:e2000903. [PMID: 32309909 DOI: 10.1002/smll.202000903] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/12/2020] [Revised: 03/13/2020] [Accepted: 03/16/2020] [Indexed: 05/08/2023]
Abstract
Tin-based perovskite, which exhibits narrower bandgap and comparable photophysical properties to its lead analogs, is one of the most forward-looking lead-free semiconductor materials. However, the poor oxidative stability of tin perovskite hinders the development toward practical application. In this work, the effect of pseudohalide anions on the stability and emission properties of single-layer 2D tin perovskite nanoplates with chemical formula TEA2 SnI4 (TEA = 2-thiophene-ethylammonium) is reported. The results reveal that ammonium thiocyanate (NH4 SCN) is the most effective additive in enhancing the stability and photoluminescence quantum yield of 2D TEA2 SnI4 (23 ± 3%). X-Ray photoelectron spectroscopic investigations on the thiocyanate passivated TEA2 SnI4 nanoplate show less than a 1% increase of Sn4+ signal upon 30 min exposure to air under ambient conditions (298 K, humidity ≈70%). Furthermore, no noticeable decrease in emission intensity of the nanoplate is observed after 20 h in air. The SCN- passivation during the growth stage of TEA2 SnI4 is proposed to play a crucial role in preventing the oxidation of Sn2+ and hence boosts both stability and photoluminescence yield of tin perovskite nanoplates.
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Affiliation(s)
- Jin-Tai Lin
- Department of Chemistry, National Taiwan University, Taipei, 10617, Taiwan
| | - Yu-Kai Hu
- Department of Chemistry, National Taiwan University, Taipei, 10617, Taiwan
| | - Cheng-Hung Hou
- Research Center for Applied Science, Academia Sinica, Taipei, 11529, Taiwan
| | - Chen-Cheng Liao
- Department of Chemistry, Nation Taiwan Normal University, Taipei, 11677, Taiwan
| | - Wei-Tsung Chuang
- National Synchrotron Radiation Research Center, Hsinchu, 30076, Taiwan
| | - Ching-Wen Chiu
- Department of Chemistry, National Taiwan University, Taipei, 10617, Taiwan
| | - Ming-Kang Tsai
- Department of Chemistry, Nation Taiwan Normal University, Taipei, 11677, Taiwan
| | - Jing-Jong Shyue
- Research Center for Applied Science, Academia Sinica, Taipei, 11529, Taiwan
- Department of Materials Science and Engineering, National Taiwan University, Taipei, 10617, Taiwan
| | - Pi-Tai Chou
- Department of Chemistry, National Taiwan University, Taipei, 10617, Taiwan
- Center for Emerging Materials and Advanced Devices, National Taiwan University, Taipei, 10617, Taiwan
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