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Zhao B, Chen H, Zhu Z, Yu X, Huang W, Gao S, Li Y. Polycrystalline Lead-Free Perovskite Direct X-Ray Detectors with High Durability and Low Limit of Detection via Low-Temperature Coating. ACS Appl Mater Interfaces 2024; 16:6113-6121. [PMID: 38270060 DOI: 10.1021/acsami.3c16581] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/26/2024]
Abstract
Direct X-ray detectors represent a transformative technology in the realm of radiography and imaging. The double halide-based perovskite cesium silver bismuth bromide (Cs2AgBiBr6) has emerged as a promising material for use in direct X-ray imaging, owing to its nontoxic composition, strong X-ray absorption, decent charge mobility lifetime product (μτ), and low-cost preparation. However, formidable issues related to scalability and ion migration, stemming from intrinsic factors such as halogen vacancies and grain boundaries, have presented significant impediments. These issues have been associated with substantial noise, baseline instability, and a curtailment of detection performance. In response to these multifaceted challenges, we propose a slurry-based in situ treatment technique for fabricating robust Cs2AgBiBr6 thick films. This novel approach adeptly mitigates halogen vacancies, actively passivates grain boundaries, and concurrently elevates the ion migration activation energy, thus effectively suppressing ion migration. Consequently, the obtained X-ray detector exhibits excellent operating stability with minimal signal drift of 8.5 × 10-9 nA cm-1 s-1 V-1 and achieves a remarkable 385% increase in sensitivity with a limit of detection as low as 7.8 nGyair s-1. These results mark a significant step toward the development of high-performance and long-lasting lead-free perovskite direct X-ray detectors.
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Affiliation(s)
- Bo Zhao
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Huiwen Chen
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Ziyao Zhu
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Xuefeng Yu
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Weixiong Huang
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Sheng Gao
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Yunlong Li
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
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Chai Y, Jiang C, Hu X, Han J, Wang Y, Yang W, Li C, Zeng H, Li X. Homogeneous Bridging Induces Compact and Scalable Perovskite Thick Films for X-Ray Flat-Panel Detectors. Small 2023; 19:e2305357. [PMID: 37635124 DOI: 10.1002/smll.202305357] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/27/2023] [Revised: 08/15/2023] [Indexed: 08/29/2023]
Abstract
Solution-processed organic-inorganic hybrid perovskite polycrystalline thick films have shown great potential in X-ray detection. However, the preparation of compact perovskite thick films with large area is still challenging due to the limitation of feasible ink formulation and pinholes caused by solvent volatilization. Post-treatment and hot-pressing are usually involved to improve the film quality, which is however unsuitable for subsequent integration. In this work, a homogeneous bridging strategy is developed to prepare compact perovskite films directly. A stable perovskite slurry with suitable viscosity consisting of undissolved grains and supersaturated solution is formed by adding a weak coordination solvent to the pre-synthesized microcrystalline powders. Small perovskite grains in situ grow from the saturated solution during the annealing, filling the pinholes and connecting the surrounding original grains. As a result, large-area perovskite thick film with tight grain arrangement and ultralow current drift is blade-coated to achieve X-ray imaging. The optimal device displays an impressive mobility-lifetime product of 2.2 × 10-3 cm2 V-1 and a champion ratio of sensitivity to the dark current density of 2.23 × 1011 µC Gyair -1 A-1 . This work provides a simple and effective route to prepare high-quality perovskite thick films, which is instructive for the development of perovskite-based X-ray flat-panel detectors.
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Affiliation(s)
- Yingjun Chai
- MIIT Key Laboratory of Advanced Display Material and Devices, School of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Chaoyan Jiang
- School of Materials Science and Chemical Engineering, Ningbo University, Ningbo, 315211, China
| | - Xudong Hu
- MIIT Key Laboratory of Advanced Display Material and Devices, School of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Jiguang Han
- MIIT Key Laboratory of Advanced Display Material and Devices, School of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Yao Wang
- MIIT Key Laboratory of Advanced Display Material and Devices, School of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Wanqiu Yang
- MIIT Key Laboratory of Advanced Display Material and Devices, School of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Chongkang Li
- MIIT Key Laboratory of Advanced Display Material and Devices, School of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Haibo Zeng
- MIIT Key Laboratory of Advanced Display Material and Devices, School of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Xiaoming Li
- MIIT Key Laboratory of Advanced Display Material and Devices, School of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
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Kim MK, Choi YS, Kim D, Heo K, Oh SJ, Lee S, An J, Yoo H, Kim SH, Kim TS, Shin B. Integration of Large-Area Halide Perovskite Single Crystals and Substrates via Chemical Welding Using an Ionic Liquid for Applications in X-ray Detection. ACS Appl Mater Interfaces 2023. [PMID: 38015650 DOI: 10.1021/acsami.3c09854] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/30/2023]
Abstract
The large carrier lifetime mobility product and strong stopping power for high-energy X-rays make halide perovskites an attractive candidate for next-generation X-ray detectors. In particular, high-energy X-rays in the range of several tens of keV require halide perovskite absorber layers with thicknesses exceeding a few millimeters. To avoid carrier scattering caused by grain boundaries at such thicknesses, the utilization of single crystals is desirable. Large-area single crystals are predominantly grown in a freestanding form, and integration onto a substrate is necessary for the fabrication of commercial devices. However, an effective method for integrating large single crystals onto a substrate has not yet been developed. In this study, a large-area (20 cm2) MAPbBr3 single crystal is bonded to an indium tin oxide (ITO) substrate using an ionic liquid, showing strong adhesion strength of 164 kPa. X-ray detectors based on ITO/MAPbBr3 single crystal bonded by methylammonium acetate achieved excellent sensitivity of 91,200 μC Gyair-1 cm-2, the highest among substrate-integrated halide perovskite single crystal X-ray detectors.
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Affiliation(s)
- Min Kyu Kim
- Department of Materials Science and Engineering, KAIST, 291, Daehak-ro, Yuseong-gu, Daejeon-si 34141, Republic of Korea
| | - Young Seung Choi
- Department of Materials Science and Engineering, KAIST, 291, Daehak-ro, Yuseong-gu, Daejeon-si 34141, Republic of Korea
| | - Dooho Kim
- Strategic Development team, Vieworks Company, Ltd., 41-3, Burim-ro 170 beon-gil, Dongan-gu, Anyang-si, Gyeonggi-do 14055, Republic of Korea
| | - Kang Heo
- Strategic Development team, Vieworks Company, Ltd., 41-3, Burim-ro 170 beon-gil, Dongan-gu, Anyang-si, Gyeonggi-do 14055, Republic of Korea
| | - Seung Jin Oh
- Department of Mechanical Engineering, KAIST, 291, Daehak-ro, Yuseong-gu, Daejeon-si 34141, Republic of Korea
| | - Sujeong Lee
- Department of Nuclear and Quantum Engineering, KAIST, 291, Daehak-ro, Yuseong-gu, Daejeon-si 34141, Republic of Korea
| | - Jeongho An
- Strategic Development team, Vieworks Company, Ltd., 41-3, Burim-ro 170 beon-gil, Dongan-gu, Anyang-si, Gyeonggi-do 14055, Republic of Korea
| | - Hyeonjae Yoo
- Strategic Development team, Vieworks Company, Ltd., 41-3, Burim-ro 170 beon-gil, Dongan-gu, Anyang-si, Gyeonggi-do 14055, Republic of Korea
| | - Sang Hoon Kim
- Strategic Development team, Vieworks Company, Ltd., 41-3, Burim-ro 170 beon-gil, Dongan-gu, Anyang-si, Gyeonggi-do 14055, Republic of Korea
| | - Taek-Soo Kim
- Department of Mechanical Engineering, KAIST, 291, Daehak-ro, Yuseong-gu, Daejeon-si 34141, Republic of Korea
| | - Byungha Shin
- Department of Materials Science and Engineering, KAIST, 291, Daehak-ro, Yuseong-gu, Daejeon-si 34141, Republic of Korea
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4
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Li M, He Y, Feng X, Qu W, Wei W, Yang B, Wei H. Reductant Engineering in Stable and High-Quality Tin Perovskite Single Crystal Growth for Heterojunction X-Ray Detectors. Adv Mater 2023; 35:e2307042. [PMID: 37792825 DOI: 10.1002/adma.202307042] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/17/2023] [Revised: 09/08/2023] [Indexed: 10/06/2023]
Abstract
Tin perovskites have emerged as a promising alternative material to address the toxicity of lead perovskites and the low bandgap of around 1.1 eV is also compatible with tandem solar cell applications. Nevertheless, the optoelectronic performance of solution-processed tin perovskite single-crystal counterparts still lags behind because of the tin instability under ambient conditions during crystal growth and limited reductants to protect the Sn2+ ions from oxidation. Here, the reductant engineering to grow high-quality tin perovskite single crystals under ambient conditions is studied. Oxalic acid (H2 C2 O4 ) serves as an excellent reductant and sacrificial agent to protect Sn2+ ions in methanol due to its suitable redox potential of -0.49 V, and the CO2 as the oxidation product in the gas state can be easily separated from the solution. The FPEA2 SnI4 single crystal grown by this strategy exhibits low trap density perovskite surface by constructing an FPEA2 PbI4 -FPEA2 SnI4 (FPI-FSI) single crystal heterojunction for X-ray detection. An improved X-ray sensitivity of 1.7 × 105 µC Gy-1 cm-2 is realized in the heterojunction device, outperforming the control FPEA2 PbI4 counterpart.
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Affiliation(s)
- Mingbian Li
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China
| | - Yuhong He
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China
| | - Xiaopeng Feng
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China
| | - Wei Qu
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China
| | - Wei Wei
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, P. R. China
| | - Bai Yang
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China
- Optical Functional Theragnostic Joint Laboratory of Medicine and Chemistry, The First Hospital of Jilin University, Changchun, 130012, P. R. China
| | - Haotong Wei
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China
- Optical Functional Theragnostic Joint Laboratory of Medicine and Chemistry, The First Hospital of Jilin University, Changchun, 130012, P. R. China
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Li L, Fang X, Zhang Z, Yang Q, Wang F, Li M, Zhu R, Wang L, Zhu Y, Miao X, Lu Y, Shi J, Wu Y, Liu G, Fang Y, Tian H, Ren Z, Yang D, Han G. Lattice-Gradient Perovskite KTaO 3 Films for an Ultrastable and Low-Dose X-Ray Detector. Adv Mater 2023; 35:e2211026. [PMID: 37796177 DOI: 10.1002/adma.202211026] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/25/2022] [Revised: 09/25/2023] [Indexed: 10/06/2023]
Abstract
Conventional indirect X-ray detectors employ scintillating phosphors to convert X-ray photons into photodiode-detectable visible photons, leading to low conversion efficiencies, low spatial resolutions, and optical crosstalk. Consequently, X-ray detectors that directly convert photons into electric signals have long been desired for high-performance medical imaging and industrial inspection. Although emerging hybrid inorganic-organic halide perovskites, such as CH3 NH3 PbI3 and CH3 NH3 PbBr3 , exhibit high sensitivity, they have salient drawbacks including structural instability, ion motion, and the use of toxic Pb. Here, this work reports an ultrastable, low-dose X-ray detector comprising KTaO3 perovskite films epitaxially grown on a Nb-doped strontium titanate substrate using a low-cost solution method. The detector exhibits a stable photocurrent under high-dose irradiation, high-temperature (200 °C), and aqueous conditions. Moreover, the prototype KTaO3 -film-based detector exhibits a 150-fold higher sensitivity (3150 µC Gyair -1 cm-2 ) and 150-fold lower detection limit (<40 nGyair s-1 ) than those of commercial α-Se-based direct detectors. Systematic investigations reveal that the high stability of the detector originates from the strong covalent bonds within the KTaO3 film, whereas the low detection limit is due to a lattice-gradient-driven built-in electric field and the high insulating property of KTaO3 film. This study unveils a new path toward the fabrication of green, stable, and low-dose X-ray detectors using oxide perovskite films, which have significant application potential in medical imaging and security operations.
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Affiliation(s)
- Liqi Li
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Xuchao Fang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Zijun Zhang
- Center of Electron Microscope, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Qian Yang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Fei Wang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Menglu Li
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Ruixue Zhu
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
| | - Lixiang Wang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Yihan Zhu
- Center for Electron Microscopy, State Key Laboratory Breeding Base of Green Chemistry, Synthesis Technology and College of Chemical Engineering, Zhejiang University of Technology, Hangzhou, 310014, China
| | - Xiaohe Miao
- Instrumentation and Service Center for Physical Sciences, Westlake University, Hangzhou, Zhejiang, 310024, China
| | - Yangfan Lu
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Junhui Shi
- Research Center for Humanoid Sensing, Zhejianglab, Hangzhou, 311100, China
| | - Yongjun Wu
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Gang Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
| | - Yanjun Fang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - He Tian
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
- Center of Electron Microscope, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
- School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052, China
| | - Zhaohui Ren
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
- Research Center for Humanoid Sensing, Zhejianglab, Hangzhou, 311100, China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan, 030024, China
| | - Deren Yang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Gaorong Han
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
- Ningbo Campus, Zhejiang University, Zhejiang, 315100, China
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Leonarski F, Nan J, Matej Z, Bertrand Q, Furrer A, Gorgisyan I, Bjelčić M, Kepa M, Glover H, Hinger V, Eriksson T, Cehovin A, Eguiraun M, Gasparotto P, Mozzanica A, Weinert T, Gonzalez A, Standfuss J, Wang M, Ursby T, Dworkowski F. Kilohertz serial crystallography with the JUNGFRAU detector at a fourth-generation synchrotron source. IUCrJ 2023; 10:729-737. [PMID: 37830774 PMCID: PMC10619449 DOI: 10.1107/s2052252523008618] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/01/2023] [Accepted: 09/28/2023] [Indexed: 10/14/2023]
Abstract
Serial and time-resolved macromolecular crystallography are on the rise. However, beam time at X-ray free-electron lasers is limited and most third-generation synchrotron-based macromolecular crystallography beamlines do not offer the necessary infrastructure yet. Here, a new setup is demonstrated, based on the JUNGFRAU detector and Jungfraujoch data-acquisition system, that enables collection of kilohertz serial crystallography data at fourth-generation synchrotrons. More importantly, it is shown that this setup is capable of collecting multiple-time-point time-resolved protein dynamics at kilohertz rates, allowing the probing of microsecond to second dynamics at synchrotrons in a fraction of the time needed previously. A high-quality complete X-ray dataset was obtained within 1 min from lysozyme microcrystals, and the dynamics of the light-driven sodium-pump membrane protein KR2 with a time resolution of 1 ms could be demonstrated. To make the setup more accessible for researchers, downstream data handling and analysis will be automated to allow on-the-fly spot finding and indexing, as well as data processing.
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Affiliation(s)
- Filip Leonarski
- Photon Science Division, Paul Scherrer Institut, CH-5303 Villigen PSI, Switzerland
| | - Jie Nan
- MAX IV Laboratory, Lund University, POB. 118, SE-22100 Lund, Sweden
| | - Zdenek Matej
- MAX IV Laboratory, Lund University, POB. 118, SE-22100 Lund, Sweden
| | - Quentin Bertrand
- Division of Biology and Chemistry, Paul Scherrer Institut, CH-5303 Villigen PSI, Switzerland
| | - Antonia Furrer
- Division of Biology and Chemistry, Paul Scherrer Institut, CH-5303 Villigen PSI, Switzerland
| | | | - Monika Bjelčić
- MAX IV Laboratory, Lund University, POB. 118, SE-22100 Lund, Sweden
| | - Michal Kepa
- Division of Biology and Chemistry, Paul Scherrer Institut, CH-5303 Villigen PSI, Switzerland
| | - Hannah Glover
- Division of Biology and Chemistry, Paul Scherrer Institut, CH-5303 Villigen PSI, Switzerland
| | - Viktoria Hinger
- Photon Science Division, Paul Scherrer Institut, CH-5303 Villigen PSI, Switzerland
| | - Thomas Eriksson
- MAX IV Laboratory, Lund University, POB. 118, SE-22100 Lund, Sweden
| | | | - Mikel Eguiraun
- MAX IV Laboratory, Lund University, POB. 118, SE-22100 Lund, Sweden
| | - Piero Gasparotto
- Scientific Computing, Theory and Data, Paul Scherrer Institut, CH-5303 Villigen PSI, Switzerland
| | - Aldo Mozzanica
- Photon Science Division, Paul Scherrer Institut, CH-5303 Villigen PSI, Switzerland
| | - Tobias Weinert
- Division of Biology and Chemistry, Paul Scherrer Institut, CH-5303 Villigen PSI, Switzerland
| | - Ana Gonzalez
- MAX IV Laboratory, Lund University, POB. 118, SE-22100 Lund, Sweden
| | - Jörg Standfuss
- Division of Biology and Chemistry, Paul Scherrer Institut, CH-5303 Villigen PSI, Switzerland
| | - Meitian Wang
- Photon Science Division, Paul Scherrer Institut, CH-5303 Villigen PSI, Switzerland
| | - Thomas Ursby
- MAX IV Laboratory, Lund University, POB. 118, SE-22100 Lund, Sweden
| | - Florian Dworkowski
- Photon Science Division, Paul Scherrer Institut, CH-5303 Villigen PSI, Switzerland
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Chen Z, Wang H, Li F, Zhang W, Shao Y, Yang S. Ultrasensitive and Robust CsPbBr 3 Single-Crystal X-ray Detectors Based on Interface Engineering. ACS Appl Mater Interfaces 2023. [PMID: 37883685 DOI: 10.1021/acsami.3c11409] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/28/2023]
Abstract
Halide lead perovskites have shown great development in recent years for ionizing radiation detection. However, the bias-induced interfacial electrochemical reaction between the perovskite and electrode severely deteriorates detector performance. We report that BCP strongly interacts with Al and constructs a stable Al-BCP chelating interface, resulting in the suppression of a detrimental electrochemical reaction. The fabricated Au/Al/BCP/C60/CsPbBr3/Au detector shows a low dark current of 3 nA with a stable baseline at an extremely high bias of 100 V (∼100 V mm-1). The superior high-bias stability enables a high sensitivity of 7.3 × 104 μC Gyair-1 cm-2 at 100 V. Meanwhile, a low detection limit of 15 nGyair s-1 at 40 V is achieved due to the reduced noise. The outstanding performance of our device exceeds that of most advanced detectors based on CsPbBr3 single crystals. Besides, X-ray imaging with 1 mm spatial resolution is well demonstrated at a low dose rate of 200 nGyair s-1. The interfacial chelating strategy overcomes the technical limitation of bias-induced instability of perovskite radiation detectors and can be anticipated to operate under an extremely high electrical field.
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Affiliation(s)
- Zhilong Chen
- Key Laboratory for Ultrafine Materials of Ministry of Education, Shanghai Engineering Research Center of Hierarchical Nanomaterials, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
- Key Laboratory of Materials for High Power Laser, Chinese Academy of Sciences, Shanghai 201800, China
| | - Hu Wang
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Key Laboratory of Materials for High Power Laser, Chinese Academy of Sciences, Shanghai 201800, China
| | - Fenghua Li
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
- Key Laboratory of Materials for High Power Laser, Chinese Academy of Sciences, Shanghai 201800, China
| | - Wenqing Zhang
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Key Laboratory of Materials for High Power Laser, Chinese Academy of Sciences, Shanghai 201800, China
| | - Yuchuan Shao
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Key Laboratory of Materials for High Power Laser, Chinese Academy of Sciences, Shanghai 201800, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
| | - Shuang Yang
- Key Laboratory for Ultrafine Materials of Ministry of Education, Shanghai Engineering Research Center of Hierarchical Nanomaterials, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China
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8
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Qin K, Dun GH, Li YY, Zhao R, Geng X, Zhang JH, Zhang MS, Zhou RL, Peng JL, Tian H, Xie D, Yang Y, Ren TL. Straight Manipulation Annealing in a Solvent Atmosphere for Quality-Improved Cs 2AgBiBr 6 Perovskites. ACS Appl Mater Interfaces 2023; 15:37640-37648. [PMID: 37491709 DOI: 10.1021/acsami.3c05221] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/27/2023]
Abstract
As a new-generation photoelectric material, perovskites have attracted researchers' attention due to their excellent optoelectronic properties. However, the existence of defects inevitably causes structural degradation and restricts their performance, which need to be further improved by post-treatment. At present, post-treatments mostly focus on non-contact treatments, which may constrain the effect since the influence on the perovskites caused by the direct contact is much more straightly. Therefore, we proposed an annealing strategy of straight manipulation in a solvent atmosphere with the assistance of polyimide (PI) tape for the perovskite post-treatment, due to the high heat resistance and less glue residual of this tape. It casts an influence on the perovskite directly, proving the possibility of the straight manipulation by operators, promoting the recrystallization of the perovskite grains and removing the impurity substance. The optimized Pb-free perovskite film exhibits a better X-ray sensitivity of 7.5 × 104 μC Gyair-1 cm-2 and a great detection limit of 47 nGyair s-1, which is comparable to advanced Pb-based perovskite X-ray detectors and all commercial ones. The new annealing strategy provides a facile, effective, and simple method to improve the perovskite quality, exhibiting the potential and harmlessness of the direct contact post-treatment, which paves the way for a broader application of perovskites.
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Affiliation(s)
- Ken Qin
- School of Integrated Circuits, Tsinghua University, Beijing 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Guan-Hua Dun
- School of Integrated Circuits, Tsinghua University, Beijing 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Yuan-Yuan Li
- School of Integrated Circuits, Tsinghua University, Beijing 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Rui Zhao
- National Institute of Metrology, Beijing 100029, China
| | - Xiangshun Geng
- School of Integrated Circuits, Tsinghua University, Beijing 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Jia-He Zhang
- School of Integrated Circuits, Tsinghua University, Beijing 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Min-Shu Zhang
- School of Integrated Circuits, Tsinghua University, Beijing 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Ruo-Long Zhou
- School of Integrated Circuits, Tsinghua University, Beijing 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Jia-Li Peng
- School of Integrated Circuits, Tsinghua University, Beijing 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - He Tian
- School of Integrated Circuits, Tsinghua University, Beijing 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Dan Xie
- School of Integrated Circuits, Tsinghua University, Beijing 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Yi Yang
- School of Integrated Circuits, Tsinghua University, Beijing 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Tian-Ling Ren
- School of Integrated Circuits, Tsinghua University, Beijing 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
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9
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Smolyanskiy P, Burian P, Sitarz M, Bergmann B. Experimental Determination of the Charge Carrier Transport Models for Improving the Simulation of the HR GaAs:Cr Detectors' Response. Sensors (Basel) 2023; 23:6886. [PMID: 37571670 PMCID: PMC10422324 DOI: 10.3390/s23156886] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/01/2023] [Revised: 07/29/2023] [Accepted: 08/02/2023] [Indexed: 08/13/2023]
Abstract
The response of Timepix3 detectors with 300 µm and 500 µm thick HR GaAs:Cr sensors was studied with particle beams at the Danish Centre for Particle Therapy in Aarhus, Denmark. Therefore, the detectors were irradiated at different angles with protons of 240 MeV. The precise per-pixel time and energy measurements were exploited in order to determine the charge carrier transport properties. Using the tracks left by the penetrating charged particles hitting the sensor at the grazing angle, we were able to determine the charge collection efficiency, the charge carrier drift times across the sensor thickness, the dependency of the electron, and for the first time, the hole drift velocity on the electric field. Moreover, extracting the dependence of the charge cloud size on the interaction depth for different bias voltages, it was possible to determine the dependence of the diffusion coefficient on the applied bias voltage. A good agreement was found with the previously reported values for n-type GaAs. The measurements were conducted for different detector assemblies to estimate the systematic differences between them, and to generalize the results. The experimental findings were implemented into the Allpix Squared simulation framework and validated by a comparison of the measurement and simulation for the 241Am γ-ray source.
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Affiliation(s)
- Petr Smolyanskiy
- Institute of Experimental and Applied Physics, Czech Technical University in Prague, Husova 240/5, 110 00 Prague, Czech Republic
| | - Petr Burian
- Institute of Experimental and Applied Physics, Czech Technical University in Prague, Husova 240/5, 110 00 Prague, Czech Republic
- Faculty of Electrical Engineering, University of West Bohemia, Univerzitni 26, 108 00 Pilsen, Czech Republic
| | - Mateusz Sitarz
- Danish Centre for Particle Therapy, Aarhus University Hospital, Palle Juul-Jensens Boulevard 99, 8200 Aarhus, Denmark
| | - Benedikt Bergmann
- Institute of Experimental and Applied Physics, Czech Technical University in Prague, Husova 240/5, 110 00 Prague, Czech Republic
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10
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Geng X, Chen Y, Li Y, Ren J, Dun G, Qin K, Lin Z, Peng J, Tian H, Yang Y, Xie D, Ren T. Lead-Free Halide Perovskites for Direct X-Ray Detectors. Adv Sci (Weinh) 2023; 10:e2300256. [PMID: 37232232 PMCID: PMC10427383 DOI: 10.1002/advs.202300256] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/11/2023] [Revised: 05/06/2023] [Indexed: 05/27/2023]
Abstract
Lead halide perovskites have made remarkable progress in the field of radiation detection owing to the excellent and unique optoelectronic properties. However, the instability and the toxicity of lead-based perovskites have greatly hindered its practical applications. Alternatively, lead-free perovskites with high stability and environmental friendliness thus have fascinated significant research attention for direct X-ray detection. In this review, the current research progress of X-ray detectors based on lead-free halide perovskites is focused. First, the synthesis methods of lead-free perovskites including single crystals and films are discussed. In addition, the properties of these materials and the detectors, which can provide a better understanding and designing satisfactory devices are also presented. Finally, the challenge and outlook for developing high-performance lead-free perovskite X-ray detectors are also provided.
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Affiliation(s)
- Xiangshun Geng
- School of Integrated Circuit & Beijing National Research Center for Information Science and Technology (BNRist)Tsinghua UniversityBeijing100084P. R. China
| | - Yu‐Ang Chen
- School of Integrated Circuit & Beijing National Research Center for Information Science and Technology (BNRist)Tsinghua UniversityBeijing100084P. R. China
| | - Yuan‐Yuan Li
- School of Integrated Circuit & Beijing National Research Center for Information Science and Technology (BNRist)Tsinghua UniversityBeijing100084P. R. China
| | - Jun Ren
- School of Integrated Circuit & Beijing National Research Center for Information Science and Technology (BNRist)Tsinghua UniversityBeijing100084P. R. China
| | - Guan‐Hua Dun
- School of Integrated Circuit & Beijing National Research Center for Information Science and Technology (BNRist)Tsinghua UniversityBeijing100084P. R. China
| | - Ken Qin
- School of Integrated Circuit & Beijing National Research Center for Information Science and Technology (BNRist)Tsinghua UniversityBeijing100084P. R. China
| | - Zhu Lin
- Beijing National Research Center for Information Science and TechnologyTsinghua UniversityBeijing100084P. R. China
| | - Jiali Peng
- School of Integrated Circuit & Beijing National Research Center for Information Science and Technology (BNRist)Tsinghua UniversityBeijing100084P. R. China
| | - He Tian
- School of Integrated Circuit & Beijing National Research Center for Information Science and Technology (BNRist)Tsinghua UniversityBeijing100084P. R. China
| | - Yi Yang
- School of Integrated Circuit & Beijing National Research Center for Information Science and Technology (BNRist)Tsinghua UniversityBeijing100084P. R. China
| | - Dan Xie
- School of Integrated Circuit & Beijing National Research Center for Information Science and Technology (BNRist)Tsinghua UniversityBeijing100084P. R. China
| | - Tian‐Ling Ren
- School of Integrated Circuit & Beijing National Research Center for Information Science and Technology (BNRist)Tsinghua UniversityBeijing100084P. R. China
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11
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Kaa JM, Konôpková Z, Preston TR, Cerantola V, Sahle CJ, Förster M, Albers C, Libon L, Sakrowski R, Wollenweber L, Buakor K, Dwivedi A, Mishchenko M, Nakatsutsumi M, Plückthun C, Schwinkendorf JP, Spiekermann G, Thiering N, Petitgirard S, Tolan M, Wilke M, Zastrau U, Appel K, Sternemann C. A von Hámos spectrometer for diamond anvil cell experiments at the High Energy Density Instrument of the European X-ray Free-Electron Laser. J Synchrotron Radiat 2023:S1600577523003041. [PMID: 37159289 DOI: 10.1107/s1600577523003041] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
A von Hámos spectrometer has been implemented in the vacuum interaction chamber 1 of the High Energy Density instrument at the European X-ray Free-Electron Laser facility. This setup is dedicated, but not necessarily limited, to X-ray spectroscopy measurements of samples exposed to static compression using a diamond anvil cell. Si and Ge analyser crystals with different orientations are available for this setup, covering the hard X-ray energy regime with a sub-eV energy resolution. The setup was commissioned by measuring various emission spectra of free-standing metal foils and oxide samples in the energy range between 6 and 11 keV as well as low momentum-transfer inelastic X-ray scattering from a diamond sample. Its capabilities to study samples at extreme pressures and temperatures have been demonstrated by measuring the electronic spin-state changes of (Fe0.5Mg0.5)O, contained in a diamond anvil cell and pressurized to 100 GPa, via monitoring the Fe Kβ fluorescence with a set of four Si(531) analyser crystals at close to melting temperatures. The efficiency and signal-to-noise ratio of the spectrometer enables valence-to-core emission signals to be studied and single pulse X-ray emission from samples in a diamond anvil cell to be measured, opening new perspectives for spectroscopy in extreme conditions research.
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Affiliation(s)
- Johannes M Kaa
- Technische Universität Dortmund, Fakultät Physik/DELTA, Maria-Goeppert-Mayer-Straße 2, 44227 Dortmund, Germany
| | | | | | | | - Christoph J Sahle
- European Synchrotron Radiation Facility, 71 Avenue des Martyrs, 38000 Grenoble, France
| | - Mirko Förster
- Universität Potsdam, Am Neuen Palais 10, 14469 Potsdam, Germany
| | - Christian Albers
- Technische Universität Dortmund, Fakultät Physik/DELTA, Maria-Goeppert-Mayer-Straße 2, 44227 Dortmund, Germany
| | - Lélia Libon
- Universität Potsdam, Am Neuen Palais 10, 14469 Potsdam, Germany
| | - Robin Sakrowski
- Technische Universität Dortmund, Fakultät Physik/DELTA, Maria-Goeppert-Mayer-Straße 2, 44227 Dortmund, Germany
| | | | | | - Anand Dwivedi
- European XFEL, Holzkoppel 4, 22869 Schenefeld, Germany
| | | | | | | | | | | | - Nicola Thiering
- Technische Universität Dortmund, Fakultät Physik/DELTA, Maria-Goeppert-Mayer-Straße 2, 44227 Dortmund, Germany
| | | | - Metin Tolan
- Technische Universität Dortmund, Fakultät Physik/DELTA, Maria-Goeppert-Mayer-Straße 2, 44227 Dortmund, Germany
| | - Max Wilke
- Universität Potsdam, Am Neuen Palais 10, 14469 Potsdam, Germany
| | - Ulf Zastrau
- European XFEL, Holzkoppel 4, 22869 Schenefeld, Germany
| | - Karen Appel
- European XFEL, Holzkoppel 4, 22869 Schenefeld, Germany
| | - Christian Sternemann
- Technische Universität Dortmund, Fakultät Physik/DELTA, Maria-Goeppert-Mayer-Straße 2, 44227 Dortmund, Germany
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12
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Xue Z, Wei Y, Li H, Peng J, Yao F, Liu Y, Wang S, Zhou Q, Lin Q, Wang Z. Additive-Enhanced Crystallization of Inorganic Perovskite Single Crystals for High-Sensitivity X-Ray Detection. Small 2023; 19:e2207588. [PMID: 36721070 DOI: 10.1002/smll.202207588] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2022] [Revised: 01/03/2023] [Indexed: 05/04/2023]
Abstract
Inorganic cesium lead halide perovskite single crystals are particularly intriguing to ionizing radiation detection by virtue of their material stability and high attenuation coefficients. However, the growth of high-quality inorganic perovskite single crystals remains challenging, mainly due to the limited solubility. In this work, an additive-enhanced crystallization method is proposed for cesium lead perovskites. The additive can remarkably increase the solubility of cesium bromide in dimethyl sulfoxide (DMSO) forming a balanced stoichiometric precursor solution, which prevents the formation of impurity phases. In addition, the additives would react with DMSO generating glyoxylic acid (GLA) via nucleophilic substitution and Kornblum oxidation reactions. The GLA can form stable PbBr2 -DMSO-GLA complexes, which enables better crystallinity, uniformity and much longer carrier lifetimes for the grown single crystals. The X-ray detectors using the additive-enhanced crystals exhibit an ultra-high sensitivity of 3.0 × 104 µC Gyair -1 cm-2 which is more than two orders of magnitude higher than that for the control devices.
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Affiliation(s)
- Zexu Xue
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Hubei Luojia Laboratory, Wuhan University, Wuhan, 430072, China
| | - Yingrui Wei
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Hubei Luojia Laboratory, Wuhan University, Wuhan, 430072, China
| | - Hao Li
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Hubei Luojia Laboratory, Wuhan University, Wuhan, 430072, China
| | - Jiali Peng
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Hubei Luojia Laboratory, Wuhan University, Wuhan, 430072, China
| | - Fang Yao
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Hubei Luojia Laboratory, Wuhan University, Wuhan, 430072, China
| | - Yong Liu
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Hubei Luojia Laboratory, Wuhan University, Wuhan, 430072, China
| | - Sheng Wang
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Hubei Luojia Laboratory, Wuhan University, Wuhan, 430072, China
- Wuhan Institute of Quantum Technology, Wuhan, 430206, China
| | - Qianghui Zhou
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, 430072, China
| | - Qianqian Lin
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Hubei Luojia Laboratory, Wuhan University, Wuhan, 430072, China
| | - Zhiping Wang
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Hubei Luojia Laboratory, Wuhan University, Wuhan, 430072, China
- Wuhan Institute of Quantum Technology, Wuhan, 430206, China
- School of Microelectronics, Wuhan University, Wuhan, 430072, China
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13
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Song X, Cohen H, Yin J, Li H, Wang J, Yuan Y, Huang R, Cui Q, Ma C, Liu SF, Hodes G, Zhao K. Low Dimensional, Metal-Free, Hydrazinium Halide Perovskite-Related Single Crystals and Their Use as X-Ray Detectors. Small 2023:e2300892. [PMID: 37035944 DOI: 10.1002/smll.202300892] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/01/2023] [Revised: 03/12/2023] [Indexed: 06/19/2023]
Abstract
Metal-free halide perovskites (MFHaPs) have garnered significant attention in recent years due to their desirable properties, such as low toxicity, light weight, chemical versatility, and potential for optoelectronics. MFHaPs with the formula A2+ B+ X-3 (where A is a large organic divalent cation, B+ is typically NH4 + , and X is a halide) have been studied extensively, but few studies have examined alternative cations at the B position. This paper reports the synthesis of three MFHaP-related single crystals, DABCO-N2 H5 -X3 (DABCO = N-N-diazabicyclo[2.2.2]octonium, X = Br and I) and (DABCO)3 -N2 H5 (NH4 )2 Cl9 , which feature hydrazinium (N2 H5 ) at the B position. The crystals have a perovskite-like, one-dimensional, edge-connected structure and exhibit optical and band structure properties. The crystals were then tested as X-ray detectors, where they showed excellent photoresponsivity, stability, and low background noise, owing to the large semi-gap that dictates long lifetimes. The detectors exhibited sensitivity as high as 1143 ± 10 µC Gyair -1 cm-2 and a low detection limit of 2.68 µGy s-1 at 10 V. The researchers suggest that the stronger hydrogen bonding in N2 H5 + compounds compared to NH4 + MFHaPs may contribute to the detectors' enhanced stability.
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Affiliation(s)
- Xin Song
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
- KAUST Catalysis Center (KCC), Division of Physical Science and Engineering (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Hagai Cohen
- Department of Chemical Research Support, Weizmann Institute of Science, Rehovot, 76100, Israel
| | - Jun Yin
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, 999077, P. R. China
| | - Haojin Li
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
| | - Jiayi Wang
- KAUST Catalysis Center (KCC), Division of Physical Science and Engineering (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Youyou Yuan
- KAUST Catalysis Center (KCC), Division of Physical Science and Engineering (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Renwu Huang
- KAUST Catalysis Center (KCC), Division of Physical Science and Engineering (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Qingyue Cui
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
| | - Chuang Ma
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
| | - Shengzhong Frank Liu
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
- Dalian National Laboratory for Clean Energy, iChEM, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, 116023, P. R. China
| | - Gary Hodes
- Department of Molecular Chemistry and Materials Science, Weizmann Institute of Science, Rehovot, 76100, Israel
| | - Kui Zhao
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
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14
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Doblas A, Flores D, Hidalgo S, Moffat N, Pellegrini G, Quirion D, Villegas J, Maneuski D, Ruat M, Fajardo P. Inverse LGAD (iLGAD) Periphery Optimization for Surface Damage Irradiation. Sensors (Basel) 2023; 23:3450. [PMID: 37050510 PMCID: PMC10098583 DOI: 10.3390/s23073450] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/17/2022] [Revised: 03/13/2023] [Accepted: 03/16/2023] [Indexed: 06/19/2023]
Abstract
Pixelated LGADs have been established as the baseline technology for timing detectors for the High Granularity Timing Detector (HGTD) and the Endcap Timing Layer (ETL) of the ATLAS and CMS experiments, respectively. The drawback of segmenting an LGAD is the non-gain area present between pixels and the consequent reduction in the fill factor. To overcome this issue, the inverse LGAD (iLGAD) technology has been proposed by IMB-CNM to enhance the fill factor and provide excellent tracking capabilities. In this work, we explore the use of iLGAD sensors for surface damage irradiation by developing a new generation of iLGADs, the periphery of which is optimized to improve the performance of irradiated sensors. The fabricated iLGAD sensors exhibit good electrical performances before and after X-ray irradiation.
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Affiliation(s)
- Albert Doblas
- Centro Nacional de Microelectrónica, IMB-CNM-CSIC, 08193 Barcelona, Spain
| | - David Flores
- Centro Nacional de Microelectrónica, IMB-CNM-CSIC, 08193 Barcelona, Spain
| | - Salvador Hidalgo
- Centro Nacional de Microelectrónica, IMB-CNM-CSIC, 08193 Barcelona, Spain
| | - Neil Moffat
- Centro Nacional de Microelectrónica, IMB-CNM-CSIC, 08193 Barcelona, Spain
| | - Giulio Pellegrini
- Centro Nacional de Microelectrónica, IMB-CNM-CSIC, 08193 Barcelona, Spain
| | - David Quirion
- Centro Nacional de Microelectrónica, IMB-CNM-CSIC, 08193 Barcelona, Spain
| | - Jairo Villegas
- Centro Nacional de Microelectrónica, IMB-CNM-CSIC, 08193 Barcelona, Spain
| | - Dzmitry Maneuski
- School of Physics and Astronomy, University of Glasgow, Glasgow G12 0YN, UK
| | - Marie Ruat
- European Synchrotron Radiation Facility, ESRF, 38000 Grenoble, France
| | - Pablo Fajardo
- European Synchrotron Radiation Facility, ESRF, 38000 Grenoble, France
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15
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Pan L, Liu Z, Welton C, Klepov VV, Peters JA, De Siena MC, Benadia A, Pandey I, Miceli A, Chung DY, Reddy GNM, Wessels BW, Kanatzidis MG. Ultrahigh-Flux X-ray Detection by a Solution-Grown Perovskite CsPbBr 3 Single-Crystal Semiconductor Detector. Adv Mater 2023:e2211840. [PMID: 36943095 DOI: 10.1002/adma.202211840] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/17/2022] [Revised: 03/13/2023] [Indexed: 06/18/2023]
Abstract
Solution-processed perovskites are promising for hard X-ray and gamma-ray detection, but there are limited reports on their performance under extremely intense X-rays. Here, a solution-grown all-inorganic perovskite CsPbBr3 single-crystal semiconductor detector capable of operating at ultrahigh X-ray flux of 1010 photons s-1 mm-2 is reported. High-quality solution-grown CsPbBr3 single crystals are fabricated into detectors with a Schottky diode structure of eutectic gallium indium/CsPbBr3 /Au. A high reverse-bias voltage of 1000 V (435 V mm- 1 ) can be applied with a small and stable dark current of ≈60-70 nA (≈9-10 nA mm- 2 ), which enables a high sensitivity larger than 10 000 µC Gyair -1 cm- 2 and a simultaneous low detection limit of 22 nGyair s- 1 . The CsPbBr3 semiconductor detector shows an excellent photocurrent linearity and reproducibility under 58.61 keV synchrotron X-rays with flux from 106 to 1010 photons s- 1 mm- 2 . Defect characterization by thermally stimulated current spectroscopy shows a similar low defect density of a synchrotron X-ray and a lab X-ray irradiated device. Solid-state nuclear magnetic resonance spectroscopy suggests that the excellent performance of the solution-grown CsPbBr3 single crystal may be associated with its good short-range order, comparable to the spectrometer-grade melt-grown CsPbBr3 .
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Affiliation(s)
- Lei Pan
- Department of Chemistry, Northwestern University, Evanston, IL, 60208, USA
| | - Zhifu Liu
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Claire Welton
- University of Lille, CNRS, Centrale Lille Institut, Univ. Artois, UMR 8181-UCCS- Unité de Catalyse et Chimie du Solide, Lille, F-59000, France
| | - Vladislav V Klepov
- Department of Chemistry, Northwestern University, Evanston, IL, 60208, USA
| | - John A Peters
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
- Department of Chemistry, Physics, & Engineering Studies, Chicago State University, Chicago, IL, 60608, USA
| | - Michael C De Siena
- Department of Chemistry, Northwestern University, Evanston, IL, 60208, USA
| | - Alessandro Benadia
- Department of Chemistry, Northwestern University, Evanston, IL, 60208, USA
| | - Indra Pandey
- Department of Chemistry, Northwestern University, Evanston, IL, 60208, USA
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Antonino Miceli
- X-ray Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Duck Young Chung
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - G N Manjunatha Reddy
- University of Lille, CNRS, Centrale Lille Institut, Univ. Artois, UMR 8181-UCCS- Unité de Catalyse et Chimie du Solide, Lille, F-59000, France
| | - Bruce W Wessels
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Mercouri G Kanatzidis
- Department of Chemistry, Northwestern University, Evanston, IL, 60208, USA
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
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16
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Buttacavoli A, Principato F, Gerardi G, Cascio D, Raso G, Bettelli M, Zappettini A, Taormina V, Abbene L. Window-Based Energy Selecting X-ray Imaging and Charge Sharing in Cadmium Zinc Telluride Linear Array Detectors for Contaminant Detection. Sensors (Basel) 2023; 23:3196. [PMID: 36991907 PMCID: PMC10054609 DOI: 10.3390/s23063196] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/23/2023] [Revised: 03/09/2023] [Accepted: 03/15/2023] [Indexed: 06/19/2023]
Abstract
The spectroscopic and imaging performance of energy-resolved photon counting detectors, based on new sub-millimetre boron oxide encapsulated vertical Bridgman cadmium zinc telluride linear arrays, are presented in this work. The activities are in the framework of the AVATAR X project, planning the development of X-ray scanners for contaminant detection in food industry. The detectors, characterized by high spatial (250 µm) and energy (<3 keV) resolution, allow spectral X-ray imaging with interesting image quality improvements. The effects of charge sharing and energy-resolved techniques on contrast-to-noise ratio (CNR) enhancements are investigated. The benefits of a new energy-resolved X-ray imaging approach, termed window-based energy selecting, in the detection of low- and high-density contaminants are also shown.
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Affiliation(s)
- Antonino Buttacavoli
- Department of Physics and Chemistry (DiFC)—Emilio Segrè, University of Palermo, 90128 Palermo, Italy; (A.B.)
| | - Fabio Principato
- Department of Physics and Chemistry (DiFC)—Emilio Segrè, University of Palermo, 90128 Palermo, Italy; (A.B.)
| | - Gaetano Gerardi
- Department of Physics and Chemistry (DiFC)—Emilio Segrè, University of Palermo, 90128 Palermo, Italy; (A.B.)
| | - Donato Cascio
- Department of Physics and Chemistry (DiFC)—Emilio Segrè, University of Palermo, 90128 Palermo, Italy; (A.B.)
| | - Giuseppe Raso
- Department of Physics and Chemistry (DiFC)—Emilio Segrè, University of Palermo, 90128 Palermo, Italy; (A.B.)
| | | | | | - Vincenzo Taormina
- Department of Mathematics and Informatics, University of Palermo, 90123 Palermo, Italy
| | - Leonardo Abbene
- Department of Physics and Chemistry (DiFC)—Emilio Segrè, University of Palermo, 90128 Palermo, Italy; (A.B.)
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17
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Li N, Li Y, Xie S, Wu J, Liu N, Yu Y, Lin Q, Liu Y, Yang S, Lian G, Fang Y, Yang D, Chen Z, Tao X. High-Performance and Self-Powered X-Ray Detectors Made of Smooth Perovskite Microcrystalline Films with 100-μm Grains. Angew Chem Int Ed Engl 2023; 62:e202302435. [PMID: 36892282 DOI: 10.1002/anie.202302435] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/17/2023] [Revised: 03/08/2023] [Accepted: 03/09/2023] [Indexed: 03/10/2023]
Abstract
Perovskite single crystals and polycrystalline films have complementary merits and deficiencies in X-ray detection and imaging. Herein, we report preparation of dense and smooth perovskite microcrystalline films with both merits of single crystals and polycrystalline films through polycrystal-induced growth and hot-pressing treatment (HPT). Utilizing polycrystalline films as seeds, multi-inch-sized microcrystalline films can be in-situ grown on diverse substrates with maximum grain size reaching 100 μm, which endows the microcrystalline films with comparable carrier mobility-lifetime (μτ) product as single crystals. As a result, self-powered X-ray detectors with impressive sensitivity of 6.1 × 104 μC Gyair-1 cm-2 and low detection limit of 1.5 nGyair s-1 are achieved, leading to high-contrast X-ray imaging at an ultra-low dose rate of 67 nGyair s-1. Combining with the fast response speed (186 μs), this work may contribute to the development of perovskite-based low-dose X-ray imaging.
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Affiliation(s)
- Ning Li
- Shandong University, Institute of Crystal Materials, CHINA
| | - Yuyang Li
- Zhejiang University, School of Materials Science and Engineering, CHINA
| | - Shengdan Xie
- Shandong University, Institute of Crystal Materials, CHINA
| | - Jinming Wu
- Shandong University, Institute of Crystal Materials, CHINA
| | - Nianqiao Liu
- Shandong University, Institute of Crystal Materials, CHINA
| | - Yuan Yu
- Shandong University, School of Microelectronics, CHINA
| | - Qinglian Lin
- Shandong University, Institute of Crystal Materials, CHINA
| | - Yang Liu
- Shandong University, Institute of Crystal Materials, CHINA
| | - Shuang Yang
- Shandong University, Suzhou Research Institute, CHINA
| | - Gang Lian
- Shandong University, Institute of Crystal Materials, CHINA
| | - Yanjun Fang
- Zhejiang University, School of Materials Science and Engineering, CHINA
| | - Deren Yang
- Zhejiang University, School of Materials Science and Engineering, CHINA
| | - Zhaolai Chen
- State Key Lab of Crystal Materials & Institute of Crystal Materials, Shandong University, No. 27 Shanda South Road, Jinan 250100, P.R. China, Jinan, CHINA
| | - Xutang Tao
- Shandong University, Institute of Crystal Materials, CHINA
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18
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Velthuis J, Li Y, Pritchard J, De Sio C, Beck L, Hugtenburg R. Performance of a Full-Scale Upstream MAPS-Based Verification Device for Radiotherapy. Sensors (Basel) 2023; 23:1799. [PMID: 36850398 PMCID: PMC9960806 DOI: 10.3390/s23041799] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/29/2022] [Revised: 01/10/2023] [Accepted: 01/10/2023] [Indexed: 06/18/2023]
Abstract
Intensity-modulated radiotherapy is a widely used technique for accurately targeting cancerous tumours in difficult locations using dynamically shaped beams. This is ideally accompanied by real-time independent verification. Monolithic active pixel sensors are a viable candidate for providing upstream beam monitoring during treatment. We have already demonstrated that a Monolithic Active Pixel Sensor (MAPS)-based system can fulfill all clinical requirements except for the minimum required size. Here, we report the performance of a large-scale demonstrator system consisting of a matrix of 2 × 2 sensors, which is large enough to cover almost all radiotherapy treatment fields when affixed to the shadow tray of the LINAC head. When building a matrix structure, a small dead area is inevitable. Here, we report that with a newly developed position algorithm, leaf positions can be reconstructed over the entire range with a position resolution of below ∼200 μm in the centre of the sensor, which worsens to just below 300 μm in the middle of the gap between two sensors. A leaf position resolution below 300 μm results in a dose error below 2%, which is good enough for clinical deployment.
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Affiliation(s)
- Jaap Velthuis
- School of Physics, University of Bristol, Bristol BS7 1TL, UK
- Swansea University Medical School, Faculty of Medicine, Health and Life Science, Swansea University, Swansea SA2 8PP, UK
- School of Nuclear Science and Technology, University of South China, Hengyang 421001, China
| | - Yutong Li
- School of Physics, University of Bristol, Bristol BS7 1TL, UK
| | | | - Chiara De Sio
- School of Physics, University of Bristol, Bristol BS7 1TL, UK
| | - Lana Beck
- School of Physics, University of Bristol, Bristol BS7 1TL, UK
| | - Richard Hugtenburg
- School of Physics, University of Bristol, Bristol BS7 1TL, UK
- Swansea University Medical School, Faculty of Medicine, Health and Life Science, Swansea University, Swansea SA2 8PP, UK
- Department of Medical Physics and Clinical Engineering, Swansea Bay University Health Board, Swansea SA2 4QA, UK
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19
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Leonarski F, Brückner M, Lopez-Cuenca C, Mozzanica A, Stadler HC, Matěj Z, Castellane A, Mesnet B, Wojdyla JA, Schmitt B, Wang M. Jungfraujoch: hardware-accelerated data-acquisition system for kilohertz pixel-array X-ray detectors. J Synchrotron Radiat 2023; 30:227-234. [PMID: 36601941 PMCID: PMC9814052 DOI: 10.1107/s1600577522010268] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/23/2022] [Accepted: 10/24/2022] [Indexed: 06/17/2023]
Abstract
The JUNGFRAU 4-megapixel (4M) charge-integrating pixel-array detector, when operated at a full 2 kHz frame rate, streams data at a rate of 17 GB s-1. To operate this detector for macromolecular crystallography beamlines, a data-acquisition system called Jungfraujoch was developed. The system, running on a single server with field-programmable gate arrays and general-purpose graphics processing units, is capable of handling data produced by the JUNGFRAU 4M detector, including conversion of raw pixel readout to photon counts, compression and on-the-fly spot finding. It was also demonstrated that 30 GB s-1 can be handled in performance tests, indicating that the operation of even larger and faster detectors will be achievable in the future. The source code is available from a public repository.
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Affiliation(s)
- Filip Leonarski
- Photon Science Division, Paul Scherrer Institute, Forschungsstrasse 111, 5232 Villigen, Switzerland
| | - Martin Brückner
- Photon Science Division, Paul Scherrer Institute, Forschungsstrasse 111, 5232 Villigen, Switzerland
| | - Carlos Lopez-Cuenca
- Photon Science Division, Paul Scherrer Institute, Forschungsstrasse 111, 5232 Villigen, Switzerland
| | - Aldo Mozzanica
- Photon Science Division, Paul Scherrer Institute, Forschungsstrasse 111, 5232 Villigen, Switzerland
| | - Hans-Christian Stadler
- Scientific Computing, Theory and Data Division, Paul Scherrer Institute, Forschungsstrasse 111, 5232 Villigen, Switzerland
| | - Zdeněk Matěj
- MAX IV Laboratory, Lund University, Fotongatan 2, 221 00 Lund, Sweden
| | | | - Bruno Mesnet
- IBM France, 21 av Simone Veil, 06206 Nice, France
| | | | - Bernd Schmitt
- Photon Science Division, Paul Scherrer Institute, Forschungsstrasse 111, 5232 Villigen, Switzerland
| | - Meitian Wang
- Photon Science Division, Paul Scherrer Institute, Forschungsstrasse 111, 5232 Villigen, Switzerland
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20
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Correa J, Mehrjoo M, Battistelli R, Lehmkühler F, Marras A, Wunderer CB, Hirono T, Felk V, Krivan F, Lange S, Shevyakov I, Vardanyan V, Zimmer M, Hoesch M, Bagschik K, Guerrini N, Marsh B, Sedgwick I, Cautero G, Stebel L, Giuressi D, Menk RH, Greer A, Nicholls T, Nichols W, Pedersen U, Shikhaliev P, Tartoni N, Hyun HJ, Kim SH, Park SY, Kim KS, Orsini F, Iguaz FJ, Büttner F, Pfau B, Plönjes E, Kharitonov K, Ruiz-Lopez M, Pan R, Gang S, Keitel B, Graafsma H. The PERCIVAL detector: first user experiments. J Synchrotron Radiat 2023; 30:242-250. [PMID: 36601943 PMCID: PMC9814071 DOI: 10.1107/s1600577522010347] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/29/2022] [Accepted: 10/26/2022] [Indexed: 06/17/2023]
Abstract
The PERCIVAL detector is a CMOS imager designed for the soft X-ray regime at photon sources. Although still in its final development phase, it has recently seen its first user experiments: ptychography at a free-electron laser, holographic imaging at a storage ring and preliminary tests on X-ray photon correlation spectroscopy. The detector performed remarkably well in terms of spatial resolution achievable in the sample plane, owing to its small pixel size, large active area and very large dynamic range; but also in terms of its frame rate, which is significantly faster than traditional CCDs. In particular, it is the combination of these features which makes PERCIVAL an attractive option for soft X-ray science.
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Affiliation(s)
- J. Correa
- Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, 22607 Hamburg, Germany
- Center for Free-Electron Laser Science CFEL, Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, 22607 Hamburg, Germany
| | - M. Mehrjoo
- Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, 22607 Hamburg, Germany
| | - R. Battistelli
- Helmholtz Zentrum Berlin HZB, Hahn-Meitner-Platz 1, Berlin, Germany
| | - F. Lehmkühler
- Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, 22607 Hamburg, Germany
- The Hamburg Centre for Ultrafast Imaging CUI, Luruper Chaussee 149, 22761 Hamburg, Germany
| | - A. Marras
- Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, 22607 Hamburg, Germany
- Center for Free-Electron Laser Science CFEL, Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, 22607 Hamburg, Germany
| | - C. B. Wunderer
- Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, 22607 Hamburg, Germany
- Center for Free-Electron Laser Science CFEL, Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, 22607 Hamburg, Germany
| | - T. Hirono
- Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, 22607 Hamburg, Germany
- Center for Free-Electron Laser Science CFEL, Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, 22607 Hamburg, Germany
| | - V. Felk
- Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, 22607 Hamburg, Germany
- Center for Free-Electron Laser Science CFEL, Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, 22607 Hamburg, Germany
| | - F. Krivan
- Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, 22607 Hamburg, Germany
- Center for Free-Electron Laser Science CFEL, Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, 22607 Hamburg, Germany
| | - S. Lange
- Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, 22607 Hamburg, Germany
- Center for Free-Electron Laser Science CFEL, Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, 22607 Hamburg, Germany
| | - I. Shevyakov
- Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, 22607 Hamburg, Germany
| | - V. Vardanyan
- Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, 22607 Hamburg, Germany
- Center for Free-Electron Laser Science CFEL, Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, 22607 Hamburg, Germany
| | - M. Zimmer
- Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, 22607 Hamburg, Germany
| | - M. Hoesch
- Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, 22607 Hamburg, Germany
| | - K. Bagschik
- Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, 22607 Hamburg, Germany
| | - N. Guerrini
- Science and Technology Faculties STFC, Rutherford Appleton Laboratory RAL, Didcot, United Kingdom
| | - B. Marsh
- Science and Technology Faculties STFC, Rutherford Appleton Laboratory RAL, Didcot, United Kingdom
| | - I. Sedgwick
- Science and Technology Faculties STFC, Rutherford Appleton Laboratory RAL, Didcot, United Kingdom
| | - G. Cautero
- Elettra Sincrotrone Trieste, Trieste, Italy
| | - L. Stebel
- Elettra Sincrotrone Trieste, Trieste, Italy
| | | | - R. H. Menk
- Elettra Sincrotrone Trieste, Trieste, Italy
- University of Saskatchewan, Saskatoon, Saskatchewan, Canada S7N 5A2
| | - A. Greer
- Observatory Sciences Ltd, Cambridge, United Kingdom
| | - T. Nicholls
- Science and Technology Faculties STFC, Rutherford Appleton Laboratory RAL, Didcot, United Kingdom
| | - W. Nichols
- Diamond Light Source, Didcot, United Kingdom
| | - U. Pedersen
- Diamond Light Source, Didcot, United Kingdom
| | | | - N. Tartoni
- Diamond Light Source, Didcot, United Kingdom
| | - H. J. Hyun
- Pohang Accelerator Laboratory PAL, Pohang, Gyeongbuk 37673, Republic of Korea
| | - S. H. Kim
- Pohang Accelerator Laboratory PAL, Pohang, Gyeongbuk 37673, Republic of Korea
| | - S. Y. Park
- Pohang Accelerator Laboratory PAL, Pohang, Gyeongbuk 37673, Republic of Korea
| | - K. S. Kim
- Pohang Accelerator Laboratory PAL, Pohang, Gyeongbuk 37673, Republic of Korea
| | - F. Orsini
- Synchrotron SOLEIL, Saint Aubin, France
| | | | - F. Büttner
- Helmholtz Zentrum Berlin HZB, Hahn-Meitner-Platz 1, Berlin, Germany
| | - B. Pfau
- Max-Born-Institute MBI, Max-Born-Straße 2A, Berlin, Germany
| | - E. Plönjes
- Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, 22607 Hamburg, Germany
| | - K. Kharitonov
- Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, 22607 Hamburg, Germany
| | - M. Ruiz-Lopez
- Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, 22607 Hamburg, Germany
| | - R. Pan
- Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, 22607 Hamburg, Germany
| | - S. Gang
- Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, 22607 Hamburg, Germany
| | - B. Keitel
- Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, 22607 Hamburg, Germany
| | - H. Graafsma
- Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, 22607 Hamburg, Germany
- Center for Free-Electron Laser Science CFEL, Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, 22607 Hamburg, Germany
- Mid Sweden University, Sundsvall, Sweden
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21
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Pauwels K, Douissard PA. Indirect X-ray detectors with single-photon sensitivity. J Synchrotron Radiat 2022; 29:1394-1406. [PMID: 36345747 PMCID: PMC9641558 DOI: 10.1107/s1600577522009584] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/21/2022] [Accepted: 09/29/2022] [Indexed: 06/16/2023]
Abstract
The new generation of synchrotron light sources are pushing X-ray detectors to their limits. Very demanding conditions with unprecedented flux and higher operating energies now require high-performance X-ray detectors combining sensitivity, efficiency and scalability. Over the years, hybrid pixel detectors have supplemented indirect detectors based on scintillation, with undeniable advantages. Such detectors based on silicon are, however, rather expensive to produce and are no more satisfying in terms of X-ray stopping power when targeting energies above 20 keV. An indirect detector with single X-ray photon sensitivity therefore offers promising opportunities for applications operating over a wide range of energies and fluxes. In this work, the performances of such an approach are investigated with state-of-the-art elements: a commercial sCMOS camera with fiber-optics plate coupling and a Gd2O2S:Tb powder-based scintillator. A simple method is presented for evaluation of the single X-ray photon detection limit and single X-ray sensitivity is demonstrated with the studied detector above 20 keV. Geant4 simulations also provide insight to better define the limiting factors. Finally, guidelines are provided for future R&D in the design and assembly of an innovative detector combining advantages of direct and indirect detection schemes.
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Affiliation(s)
- Kristof Pauwels
- ESRF – The European Synchrotron, 71 Avenue des Martyrs, Grenoble, France
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22
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Li H, He Y, Li W, Lu T, Tan M, Wei W, Yang B, Wei H. Perovskite Dimensional Evolution Through Cations Engineering to Tailor the Detection Limit in Hard X-ray Response. Small 2022; 18:e2203884. [PMID: 36117116 DOI: 10.1002/smll.202203884] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/23/2022] [Revised: 08/04/2022] [Indexed: 06/15/2023]
Abstract
Halide perovskites with various compositions are potential candidates in low-dosage X-ray detection due to their large sensitivity and tunable optoelectronic properties. Here, cations engineering induced dimensional evolution of halide perovskites between 0D, 2D, and 3D is reported. Centimeter-sized 2D lead-free perovskite single-crystal of 4-fluorophenethylammonium antimony iodide (FPEA3 SbI6 ) is synthesized. In contrast to the 0D phenethylammonium antimony iodide (PEA3 Sb2 I9 ), face-shared [Sb2 I9 ]3- of the bi-octahedral structure of PEA3 Sb2 I9 is split into corner-shared [SbI6 ]3- by intermolecular interactions and steric hindrance of FPEA+ ions in 2D FPEA3 SbI6 . Two Sb3+ ions share three octahedral [SbI6 ]3- , leaving one-third of Sb3+ vacancies in the framework of FPEA3 SbI6 . Furthermore, Sn2+ ions can be filled into the vacancies to form continuous 2D frameworks to tune the anisotropic conductivity and device sensitivity to hard X-rays. The dimensional evolution of perovskite single-crystals from 3D to 2D or 0D to 2D maximizes the signal/noise ratio to facilize the adjustability of detection limit in hard X-ray detection, which is determined by both device sensitivity and device noise current. A record low detection limit coefficient of 0.65 is achieved in the 2D FPEA3 SbSn0.5 I7 single-crystal sample, which results from selective charges collection over mobile ions/noise current in the 2D perovskite structure.
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Affiliation(s)
- Huayang Li
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China
- Key Laboratory of Photovoltaic Materials, Henan University, Kaifeng, 475004, P. R. China
| | - Yuhong He
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China
| | - Weijun Li
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China
| | - Tong Lu
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China
| | - Mingrui Tan
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China
| | - Wei Wei
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, P. R. China
| | - Bai Yang
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China
- Optical Functional Theragnostic Joint Laboratory of Medicine and Chemistry, The First Hospital of Jilin University, Changchun, 130012, P. R. China
| | - Haotong Wei
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China
- Optical Functional Theragnostic Joint Laboratory of Medicine and Chemistry, The First Hospital of Jilin University, Changchun, 130012, P. R. China
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23
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Liu H, Hussain S, Abbas Z, Lee J, Abbas Jaffery SH, Jung J, Kim HS, Vikraman D, Kang J. Fabrication of High-Performance Solar Cells and X-ray Detectors Using MoX 2@CNT Nanocomposite-Tuned Perovskite Layers. ACS Appl Mater Interfaces 2022; 14:33626-33640. [PMID: 35834414 DOI: 10.1021/acsami.2c08842] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The interface design of inorganic and organic halide perovskite-based devices plays an important role to attain high performance. The modification of transport layers (ETL and HTL) or the perovskite layer is given the crucial inspiration to realize superior power conversion efficiencies (PCEs). The highly conducting 2D materials of CNT, graphene/GO, and transition-metal dichalcogenides (TMDs) are suitable substitutes to tune the electronic structure/work function of perovskite devices. Herein, the nanocomposites composed of molybdenum dichalcogenides (MoX2 = MoS2, MoSe2, and MoTe2) stretched CNT was embedded with HTL or perovskite layer to improve the resulted characteristics of perovskite devices of solar cells and X-ray detectors. A superior solar cell efficiency of 12.57% was realized for the MoTe2@CNT nanocomposites using a modified active layer-composed device. Additionally, X-ray detectors with MoTe2@CNT-modulated active layers achieved 13.32 μA/cm2, 3.99 mA/Gy·cm2, 4.81 × 10-4 cm2/V·s, and 2.13 × 1015 cm2/V·s of CCD-DCD, sensitivity, mobility, and trap density, respectively. Density functional theory approximation was used to realize the improved electronics properties, optical properties, and energy band structures in the MoX2@CNT-doped perovskites evidently. Thus, the current research paves the way for the improvement of highly efficient semiconductor devices based on perovskite-based structures with the use of 2D nanocomposites.
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Affiliation(s)
- Hailiang Liu
- Department of Electronics and Electrical Engineering, Dankook University, Yongin 16890, Korea
- Convergence Semiconductor Research Center, Dankook University, Yongin 16890, Korea
| | - Sajjad Hussain
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, Korea
- Hybrid Materials Center (HMC), Sejong University, Seoul 05006, Korea
| | - Zeesham Abbas
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, Korea
- Hybrid Materials Center (HMC), Sejong University, Seoul 05006, Korea
| | - Jehoon Lee
- Department of Electronics and Electrical Engineering, Dankook University, Yongin 16890, Korea
| | - Syed Hassan Abbas Jaffery
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, Korea
- Hybrid Materials Center (HMC), Sejong University, Seoul 05006, Korea
| | - Jongwan Jung
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, Korea
- Hybrid Materials Center (HMC), Sejong University, Seoul 05006, Korea
| | - Hyun-Seok Kim
- Division of Electronics and Electrical Engineering, Dongguk University-Seoul, Seoul 04620, Korea
| | - Dhanasekaran Vikraman
- Division of Electronics and Electrical Engineering, Dongguk University-Seoul, Seoul 04620, Korea
| | - Jungwon Kang
- Department of Electronics and Electrical Engineering, Dankook University, Yongin 16890, Korea
- Convergence Semiconductor Research Center, Dankook University, Yongin 16890, Korea
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24
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Tsai H, Shrestha S, Pan L, Huang HH, Strzalka J, Williams D, Wang L, Cao LR, Nie W. Quasi-2D Perovskite Crystalline Layers for Printable Direct Conversion X-Ray Imaging. Adv Mater 2022; 34:e2106498. [PMID: 35106838 DOI: 10.1002/adma.202106498] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/18/2021] [Revised: 01/27/2022] [Indexed: 06/14/2023]
Abstract
Polycrystalline perovskite film-based X-ray detector is an appealing technology for assembling large scale imager by printing methods. However, thick crystalline layer without trap and solvent residual is challenging to fabricate. Here, the authors report a solution method to produce high quality quasi-2D perovskite crystalline layers and detectors that are suitable for X-ray imaging. By introducing n-butylamine iodide into methylammonium lead iodide precursor and coating at elevated temperatures, compact and crystalline layers with exceptional uniformity are obtained on both rigid and flexible substrates. Photodiodes built with the quasi-2D layers exhibit a low dark current and stable operation under constant electrical field over 96 h in dark, and over 15 h under X-ray irradiation. The detector responds sensitively under X-ray, delivering a high sensitivity of 1214 µC Gyair -1 cm-2 and a sensitivity gain is observed when operated under higher fields. Finally, high resolution images are demonstrated using a single pixel device that can resolve 80-200 µm features. This work paves the path for printable direct conversion X-ray imager development.
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Affiliation(s)
- Hsinhan Tsai
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, 87544, USA
- Department of Chemistry, University of California, Berkeley, Berkeley, CA, 94720, USA
| | - Shreetu Shrestha
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, 87544, USA
| | - Lei Pan
- Nuclear Engineering Program, Department of Mechanical and Aerospace Engineering, The Ohio State University, Columbus, OH, 43210, USA
| | - Hsin-Hsiang Huang
- Center for Condensed Matter Sciences, National Taiwan University, No. 1, Sec. 4, Roosevelt Rd., Taipei, 10617, Taiwan
- Department of Material Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Rd., Taipei, 10617, Taiwan
| | - Joseph Strzalka
- X-Ray Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Darrick Williams
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, 87544, USA
| | - Leeyih Wang
- Center for Condensed Matter Sciences, National Taiwan University, No. 1, Sec. 4, Roosevelt Rd., Taipei, 10617, Taiwan
| | - Lei R Cao
- Nuclear Engineering Program, Department of Mechanical and Aerospace Engineering, The Ohio State University, Columbus, OH, 43210, USA
| | - Wanyi Nie
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, 87544, USA
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25
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Li M, Li H, Li W, Li B, Lu T, Feng X, Guo C, Zhang H, Wei H, Yang B. Oriented 2D Perovskite Wafers for Anisotropic X-ray Detection through a Fast Tableting Strategy. Adv Mater 2022; 34:e2108020. [PMID: 34865244 DOI: 10.1002/adma.202108020] [Citation(s) in RCA: 22] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/06/2021] [Revised: 12/01/2021] [Indexed: 06/13/2023]
Abstract
2D perovskite single crystals have emerged as excellent optoelectronic materials owing to their unique anisotropic properties. However, growing large 2D perovskite single crystals remains challenging and time-consuming. Here, a new composition of lead-free 2D perovskite-4-fluorophenethylammonium bismuth iodide [(F-PEA)3 BiI6 ] is reported. An oriented bulk 2D wafer with a large area of 1.33 cm2 is obtained by tableting disordered 2D perovskite powders, resulting in anisotropic resistivities of 5 × 1010 and 2 × 1011 Ω cm in the lateral and vertical directions, respectively. Trivalent Bi3+ ions are employed to achieve a stronger ionic bonding energy with I- ions, which intrinsically suppress the ion-migration effect. Thus, the oriented wafer presents good capabilities in both charge collection and ion-migration suppression under a large applied bias along the out-of-plane direction, making it suitable for low-dosage X-ray detection. The large-area wafer shows a sensitive response to hard X-rays operated at a tube voltage of 120 kVp with the lowest detectable dose rate of 30 nGy s-1 . Thus, the fast tableting process is a facile and effective strategy to synthesize large-area, oriented 2D wafers, showing excellent X-ray detection performance and operational stability that are comparable to those of 2D perovskite single crystals.
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Affiliation(s)
- Mingbian Li
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China
| | - Huayang Li
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China
| | - Weijun Li
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China
| | - Bao Li
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China
| | - Tong Lu
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China
| | - Xiaopeng Feng
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China
| | - Chunjie Guo
- Department of Radiology, The First Hospital of Jilin University, Changchun, 130012, P. R. China
| | - Huimao Zhang
- Department of Radiology, The First Hospital of Jilin University, Changchun, 130012, P. R. China
| | - Haotong Wei
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China
- Optical Functional Theragnostic Joint Laboratory of Medicine and Chemistry, The First Hospital of Jilin University, Changchun, 130012, P. R. China
| | - Bai Yang
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China
- Optical Functional Theragnostic Joint Laboratory of Medicine and Chemistry, The First Hospital of Jilin University, Changchun, 130012, P. R. China
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26
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Feng A, Xie S, Fu X, Chen Z, Zhu W. Inch-Sized Thin Metal Halide Perovskite Single-Crystal Wafers for Sensitive X-Ray Detection. Front Chem 2022; 9:823868. [PMID: 35071197 PMCID: PMC8766736 DOI: 10.3389/fchem.2021.823868] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/28/2021] [Accepted: 12/10/2021] [Indexed: 11/16/2022] Open
Abstract
Metal halide perovskite single crystals are a promising candidate for X-ray detection due to their large atomic number and high carrier mobility and lifetime. However, it is still challenging to grow large-area and thin single crystals directly onto substrates to meet real-world applications. In this work, millimeter-thick and inch-sized methylammonium lead tribromide (MAPbBr3) single-crystal wafers are grown directly on indium tin oxide (ITO) substrates through controlling the distance between solution surface and substrates. The single-crystal wafers are polished and treated with O3 to achieve smooth surface, lower trap density, and better electrical properties. X-ray detectors with a high sensitivity of 632 µC Gyair -1 cm-2 under -5 V and 525 µC Gyair -1 cm-2 under -1 V bias can be achieved. This work provides an effective way to fabricate substrate-integrated, large-area, and thickness-controlled perovskite single-crystal X-ray detectors, which is instructive for developing imaging application based on perovskite single crystals.
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Affiliation(s)
- Anbo Feng
- State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan, China
| | - Shengdan Xie
- State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan, China
| | - Xiuwei Fu
- State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan, China
| | - Zhaolai Chen
- State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan, China
| | - Wei Zhu
- Institute of Radiation Medicine, Shandong Academy of Medical Sciences, Shandong First Medical University, Jinan, China
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27
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Di J, Li H, Su J, Yuan H, Lin Z, Zhao K, Chang J, Hao Y. Reveal the Humidity Effect on the Phase Pure CsPbBr 3 Single Crystals Formation at Room Temperature and Its Application for Ultrahigh Sensitive X-Ray Detector. Adv Sci (Weinh) 2022; 9:e2103482. [PMID: 34761562 PMCID: PMC8805584 DOI: 10.1002/advs.202103482] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/10/2021] [Revised: 09/28/2021] [Indexed: 05/25/2023]
Abstract
Generally, growing phase pure CsPbBr3 single crystals is challenging, and CsPb2 Br5 or Cs4 PbBr6 by-products are usually formed due to the different solubilities of CsBr and PbBr2 in the single solvent. Herein, the growth of high-quality phase pure CsPbBr3 perovskite single crystals at room temperature by a humidity controlled solvent evaporation method is reported first. Meanwhile, the room temperature phase transition process from three dimensional (3D) cubic CsPbBr3 to two dimensional (2D) layered tetragonal CsPb2 Br5 and the detailed mechanism induced by humidity are revealed. Moreover, compared with the organic-inorganic perovskite, the prepared CsPbBr3 single crystals are much more stable under high humidity, which satisfies the long-term working conditions of X-ray detectors. The X-ray detectors based on CsPbBr3 single crystals show a high sensitivity and a low detection limit of 1.89 μGyair s-1 , all of which meet the needs of medical diagnosis.
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Affiliation(s)
- Jiayu Di
- State Key Discipline Laboratory of Wide Band Gap Semiconductor TechnologySchool of MicroelectronicsXidian UniversityXi'an710071China
| | - Haojin Li
- Key Laboratory of Applied Surface and Colloid ChemistryNational Ministry of EducationShaanxi Key Laboratory for Advanced Energy DevicesShaanxi Engineering Lab for Advanced Energy TechnologyInstitute for Advanced Energy MaterialsSchool of Materials Science and EngineeringShaanxi Normal UniversityXi'an710119China
| | - Jie Su
- State Key Discipline Laboratory of Wide Band Gap Semiconductor TechnologySchool of MicroelectronicsXidian UniversityXi'an710071China
| | - Haidong Yuan
- State Key Discipline Laboratory of Wide Band Gap Semiconductor TechnologySchool of MicroelectronicsXidian UniversityXi'an710071China
| | - Zhenhua Lin
- State Key Discipline Laboratory of Wide Band Gap Semiconductor TechnologySchool of MicroelectronicsXidian UniversityXi'an710071China
| | - Kui Zhao
- State Key Discipline Laboratory of Wide Band Gap Semiconductor TechnologySchool of MicroelectronicsXidian UniversityXi'an710071China
| | - Jingjing Chang
- State Key Discipline Laboratory of Wide Band Gap Semiconductor TechnologySchool of MicroelectronicsXidian UniversityXi'an710071China
- Advanced Interdisciplinary Research Center for Flexible ElectronicsAcademy of Advanced Interdisciplinary ResearchXidian UniversityXi'an710071China
| | - Yue Hao
- State Key Discipline Laboratory of Wide Band Gap Semiconductor TechnologySchool of MicroelectronicsXidian UniversityXi'an710071China
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28
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Chen D, Niu G, Hao S, Fan L, Zhao J, Wolverton C, Xia M, Liu Q. Decreasing Structural Dimensionality of Double Perovskites for Phase Stabilization toward Efficient X-ray Detection. ACS Appl Mater Interfaces 2021; 13:61447-61453. [PMID: 34927414 DOI: 10.1021/acsami.1c20234] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Halide double perovskites have attracted substantial attention for optoelectronic applications owing to their low toxicity and high stability. However, double perovskites have strict requirements in terms of the halide type, thus rendering many of their properties unchangeable, including the band gap, atomic number, and carrier transport. By introducing long-chain organic amines, the chloride site of double perovskites can be completely replaced by bromide. Using this strategy, two dimensions silver-indium-bromide double perovskites (PEA)4AgInBr8 and (i-BA)4AgInBr8 were successfully synthesized [(PEA)+ = C6H5(CH2)2NH3+, (i-BA)+ = CH(CH3)2CH2NH3+]. Density functional theory calculations and spectroscopy characterizations were performed to unveil the semiconducting behaviors and photoluminescence properties of the title compounds. Electrical characterization confirms their good carrier-transport property (μτ product: 2.0 × 10-3 cm2 V-1) and low dark current. Moreover, the presence of heavy atoms, together with the ultrastable baseline contributes to a high X-ray detection sensitivity (185 μC Gyair-1 cm-2), greater than that of most previous double-perovskite detectors. Our work lays the foundation for broadening the family of potential double perovskites, creating a new path for the realization of long-sought perovskites with low toxicity and high stability that retain good optoelectronic performance.
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Affiliation(s)
- Da Chen
- The Beijing Municipal Key Laboratory of New Energy Materials and Technologies, School of Materials Sciences and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Guangda Niu
- Wuhan National Laboratory for Optoelectronics, Optics Valley Laboratory, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Shiqiang Hao
- Department of Materials Science and Engineering & Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
| | - Liubing Fan
- The Beijing Municipal Key Laboratory of New Energy Materials and Technologies, School of Materials Sciences and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Jing Zhao
- The Beijing Municipal Key Laboratory of New Energy Materials and Technologies, School of Materials Sciences and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Christopher Wolverton
- Department of Materials Science and Engineering & Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
| | - Mengling Xia
- Wuhan National Laboratory for Optoelectronics, Optics Valley Laboratory, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Quanlin Liu
- The Beijing Municipal Key Laboratory of New Energy Materials and Technologies, School of Materials Sciences and Engineering, University of Science and Technology Beijing, Beijing 100083, China
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29
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Song Y, Li L, Hao M, Bi W, Wang A, Kang Y, Li H, Li X, Fang Y, Yang D, Dong Q. Elimination of Interfacial-Electrochemical-Reaction-Induced Polarization in Perovskite Single Crystals for Ultrasensitive and Stable X-Ray Detector Arrays. Adv Mater 2021; 33:e2103078. [PMID: 34637161 DOI: 10.1002/adma.202103078] [Citation(s) in RCA: 30] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/23/2021] [Revised: 10/06/2021] [Indexed: 06/13/2023]
Abstract
Organic-inorganic halide perovskites have exhibited bright prospects in high-sensitivity X-ray detection. However, they generally suffer from the severe field-driven polarization issue that remarkably deteriorates the detection performance. Here, it is demonstrated that the interfacial electrochemical reaction between Au electrodes and halogen in MAPbI3 single crystals (SCs) is the major source of the dark current polarization in the metal-semiconductor-metal (MSM)-structured perovskite X-ray detectors at the initial stage of biasing. By introducing the p- and n-type charge transport layers to isolate the electrodes from contacting the SC surface, the polarization is fully eliminated under a large electric field up to 1000 V cm-1 . Moreover, the resultant lateral p-i-n heterojunction suppresses the dark current of the devices by nearly 3 orders of magnitude as compared to the MSM counterparts and therefore enables a high sensitivity of 5.2 × 106 µC Gy-1 air cm-2 and a record low X-ray detection limit down to 0.1 nGyair s-1 . The excellent biasing stability and sensitivity of the devices allow to prepare the linear detector arrays for X-ray imaging applications.
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Affiliation(s)
- Yilong Song
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China
| | - Liqi Li
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Mingwei Hao
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China
| | - Weihui Bi
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China
| | - Anran Wang
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China
| | - Yifei Kang
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China
| | - Hanming Li
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China
| | - Xiaohui Li
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China
| | - Yanjun Fang
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Deren Yang
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Qingfeng Dong
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China
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30
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Pettinato S, Girolami M, Olivieri R, Stravato A, Caruso C, Salvatori S. A Diamond-Based Dose-per-Pulse X-ray Detector for Radiation Therapy. Materials (Basel) 2021; 14:5203. [PMID: 34576426 DOI: 10.3390/ma14185203] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/30/2021] [Revised: 09/03/2021] [Accepted: 09/08/2021] [Indexed: 11/17/2022]
Abstract
One of the goals of modern dynamic radiotherapy treatments is to deliver high-dose values in the shortest irradiation time possible. In such a context, fast X-ray detectors and reliable front-end readout electronics for beam diagnostics are crucial to meet the necessary quality assurance requirements of care plans. This work describes a diamond-based detection system able to acquire and process the dose delivered by every single pulse sourced by a linear accelerator (LINAC) generating 6-MV X-ray beams. The proposed system is able to measure the intensity of X-ray pulses in a limited integration period around each pulse, thus reducing the inaccuracy induced by unnecessarily long acquisition times. Detector sensitivity under 6-MV X-photons in the 0.1–10 Gy dose range was measured to be 302.2 nC/Gy at a bias voltage of 10 V. Pulse-by-pulse measurements returned a charge-per-pulse value of 84.68 pC, in excellent agreement with the value estimated (but not directly measured) with a commercial electrometer operating in a continuous integration mode. Significantly, by intrinsically holding the acquired signal, the proposed system enables signal processing even in the millisecond period between two consecutive pulses, thus allowing for effective real-time dose-per-pulse monitoring.
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31
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Gao Y, Ge Y, Wang X, Liu J, Liu W, Cao Y, Gu K, Guo Z, Wei YM, Zhou N, Yu D, Meng H, Yu XF, Zheng H, Huang W, Li J. Ultrathin and Ultrasensitive Direct X-ray Detector Based on Heterojunction Phototransistors. Adv Mater 2021; 33:e2101717. [PMID: 34219296 DOI: 10.1002/adma.202101717] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/03/2021] [Revised: 04/21/2021] [Indexed: 06/13/2023]
Abstract
Most contemporary X-ray detectors adopt device structures with non/low-gain energy conversion, such that a fairly thick X-ray photoconductor or scintillator is required to generate sufficient X-ray-induced charges, and thus numerous merits for thin devices, such as mechanical flexibility and high spatial resolution, have to be compromised. This dilemma is overcome by adopting a new high-gain device concept of a heterojunction X-ray phototransistor. In contrast to conventional detectors, X-ray phototransistors allow both electrical gating and photodoping for effective carrier-density modulation, leading to high photoconductive gain and low noise. As a result, ultrahigh sensitivities of over 105 μC Gyair -1 cm-2 with low detection limit are achieved by just using an ≈50 nm thin photoconductor. The employment of ultrathin photoconductors also endows the detectors with superior flexibility and high imaging resolution. This concept offers great promise in realizing well-balanced detection performance, mechanical flexibility, integration, and cost for next-generation X-ray detectors.
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Affiliation(s)
- Yuanhong Gao
- Materials Interfaces Center, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China
| | - Yongshuai Ge
- Paul C. Lauterbur Research Center for Biomedical Imaging, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China
- Center for Medical Artificial Intelligence, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China
| | - Xinwei Wang
- School of Advanced Materials, Shenzhen Graduate School, Peking University, Shenzhen, 518055, P. R. China
| | - Jin Liu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Tat-sen University, Guangzhou, 510275, P. R. China
| | - Wenquan Liu
- Center for Opto-Electronic Engineering and Technology, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China
| | - Yong Cao
- Materials Interfaces Center, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China
| | - Kaichen Gu
- Department of Chemical and Biological Engineering, Princeton University, Princeton, NJ, 08544, USA
| | - Zheng Guo
- School of Advanced Materials, Shenzhen Graduate School, Peking University, Shenzhen, 518055, P. R. China
| | - Yu-Ming Wei
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Tat-sen University, Guangzhou, 510275, P. R. China
| | - Ni Zhou
- Materials Interfaces Center, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China
| | - De Yu
- Materials Interfaces Center, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China
| | - Hong Meng
- School of Advanced Materials, Shenzhen Graduate School, Peking University, Shenzhen, 518055, P. R. China
| | - Xue-Feng Yu
- Materials Interfaces Center, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China
| | - Hairong Zheng
- Paul C. Lauterbur Research Center for Biomedical Imaging, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China
- Center for Medical Artificial Intelligence, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China
| | - Wei Huang
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, P. R. China
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, P. R. China
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), South Puzhu Road, Nanjing, 211816, P. R. China
| | - Jia Li
- Materials Interfaces Center, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China
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32
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Jang J, Ji S, Grandhi GK, Cho HB, Im WB, Park JU. Multimodal Digital X-ray Scanners with Synchronous Mapping of Tactile Pressure Distributions using Perovskites. Adv Mater 2021; 33:e2008539. [PMID: 34145641 DOI: 10.1002/adma.202008539] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/18/2020] [Revised: 02/05/2021] [Indexed: 06/12/2023]
Abstract
Visual and tactile information are the key intuitive perceptions in sensory systems, and the synchronized detection of these two sensory modalities can enhance accuracy of object recognition by providing complementary information between them. Herein, multimodal integration of flexible, high-resolution X-ray detectors with a synchronous mapping of tactile pressure distributions for visualizing internal structures and morphologies of an object simultaneously is reported. As a visual-inspection method, perovskite materials that convert X-rays into charge carriers directly are synthesized. By incorporating pressure-sensitive air-dielectric transistors in the perovskite components, X-ray detectors with dual modalities (i.e., vision and touch) are attained as an active-matrix platform for digital visuotactile examinations. Also, in vivo X-ray imaging and pressure sensing are demonstrated using a live rat. This multiplexed platform has high spatial resolution and good flexibility, thereby providing highly accurate inspection and diagnoses even for the distorted images of nonplanar objects.
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Affiliation(s)
- Jiuk Jang
- Nano Science Technology Institute, Department of Materials Science and Engineering, Yonsei University, Seoul, 03722, Republic of Korea
| | - Sangyoon Ji
- Nano Science Technology Institute, Department of Materials Science and Engineering, Yonsei University, Seoul, 03722, Republic of Korea
| | - G Krishnamurthy Grandhi
- Division of Materials Science and Engineering, Hanyang University, Seoul, 04763, Republic of Korea
| | - Han Bin Cho
- Division of Materials Science and Engineering, Hanyang University, Seoul, 04763, Republic of Korea
| | - Won Bin Im
- Division of Materials Science and Engineering, Hanyang University, Seoul, 04763, Republic of Korea
| | - Jang-Ung Park
- Nano Science Technology Institute, Department of Materials Science and Engineering, Yonsei University, Seoul, 03722, Republic of Korea
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33
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Yao M, Jiang J, Xin D, Ma Y, Wei W, Zheng X, Shen L. High-Temperature Stable FAPbBr 3 Single Crystals for Sensitive X-ray and Visible Light Detection toward Space. Nano Lett 2021; 21:3947-3955. [PMID: 33881887 DOI: 10.1021/acs.nanolett.1c00700] [Citation(s) in RCA: 29] [Impact Index Per Article: 9.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Organolead trihalide perovskite single crystals (SCs) offer unprecedented opportunity for X-ray and visible light detection. Nevertheless, it remains a challenge to keep simultaneous high-performance and stability at a high-temperature working mode. Herein, formamidinium lead bromide (FAPbBr3) SCs are developed to successfully address these issues. Low-temperature crystallized induced FAPbBr3 SCs possess an excellent mobility-lifetime product and an ultralow surface charge recombination velocity, thus exhibiting an X-ray dose rate as low as 0.3 μGyair s-1 as a sensitive radiation detector. Furthermore, it also contributes a specific detectivity as high as 3.5 × 1012 cm Hz1/2 W-1, keeping stable at high-temperature of 460 K as a photodetector. A prototype of an imaging system with diffuse reflection mode is constructed using detectors as receivers, enabling defined scanning images in a high temperature environment. The bifunctional FAPbBr3 SC detectors will motivate new strategies for stable detection in an extreme space environment.
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Affiliation(s)
- Mengnan Yao
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, P. R. China
| | - Jizhong Jiang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, P. R. China
| | - Deyu Xin
- Sichuan Research Center of New Materials, Institute of Chemical Materials, China Academy of Engineering Physics, Chengdu 610200, P. R. China
| | - Yao Ma
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, P. R. China
| | - Wei Wei
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, P. R. China
| | - Xiaojia Zheng
- Sichuan Research Center of New Materials, Institute of Chemical Materials, China Academy of Engineering Physics, Chengdu 610200, P. R. China
| | - Liang Shen
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, P. R. China
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34
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Tsigaridas S, Zanettini S, Bettelli M, Amadè NS, Calestani D, Ponchut C, Zappettini A. Fabrication of Small-Pixel CdZnTe Sensors and Characterization with X-rays. Sensors (Basel) 2021; 21:s21092932. [PMID: 33922055 PMCID: PMC8122653 DOI: 10.3390/s21092932] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/01/2021] [Revised: 04/18/2021] [Accepted: 04/21/2021] [Indexed: 11/23/2022]
Abstract
Over the past few years, sensors made from high-Z compound semiconductors have attracted quite some attention for use in applications which require the direct detection of X-rays in the energy range 30–100 keV. One of the candidate materials with promising properties is cadmium zinc telluride (CdZnTe). In the context of this article, we have developed pixelated sensors from CdZnTe crystals grown by Boron oxide encapsulated vertical Bridgman technique. We demonstrate the successful fabrication of CdZnTe pixel sensors with a fine pitch of 55 m and thickness of 1 mm and 2 mm. The sensors were bonded on Timepix readout chips to evaluate their response to X-rays provided by conventional sources. Despite the issues related to single-chip fabrication procedure, reasonable uniformity was achieved along with low leakage current values at room temperature. In addition, the sensors show stable performance over time at moderate incoming fluxes, below 106 photons mm−2s−1.
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Affiliation(s)
- Stergios Tsigaridas
- European Synchrotron Radiation Facility (ESRF), 71 Avenue des Martyrs, F-38043 Grenoble, France;
- Correspondence:
| | | | - Manuele Bettelli
- IMEM-CNR, Istituto Materiali per l’Elettronica e il Magnetismo, Consiglio Nazionale delle Ricerche, Parco Area delle Scienze 37/A, 43124 Parma, Italy; (M.B.); (N.S.A.); (D.C.); (A.Z.)
| | - Nicola Sarzi Amadè
- IMEM-CNR, Istituto Materiali per l’Elettronica e il Magnetismo, Consiglio Nazionale delle Ricerche, Parco Area delle Scienze 37/A, 43124 Parma, Italy; (M.B.); (N.S.A.); (D.C.); (A.Z.)
| | - Davide Calestani
- IMEM-CNR, Istituto Materiali per l’Elettronica e il Magnetismo, Consiglio Nazionale delle Ricerche, Parco Area delle Scienze 37/A, 43124 Parma, Italy; (M.B.); (N.S.A.); (D.C.); (A.Z.)
| | - Cyril Ponchut
- European Synchrotron Radiation Facility (ESRF), 71 Avenue des Martyrs, F-38043 Grenoble, France;
| | - Andrea Zappettini
- IMEM-CNR, Istituto Materiali per l’Elettronica e il Magnetismo, Consiglio Nazionale delle Ricerche, Parco Area delle Scienze 37/A, 43124 Parma, Italy; (M.B.); (N.S.A.); (D.C.); (A.Z.)
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35
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Liu Y, Zhang Y, Zhu X, Feng J, Spanopoulos I, Ke W, He Y, Ren X, Yang Z, Xiao F, Zhao K, Kanatzidis M, Liu SF. Triple-Cation and Mixed-Halide Perovskite Single Crystal for High-Performance X-ray Imaging. Adv Mater 2021; 33:e2006010. [PMID: 33475209 DOI: 10.1002/adma.202006010] [Citation(s) in RCA: 67] [Impact Index Per Article: 22.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/02/2020] [Revised: 12/17/2020] [Indexed: 05/17/2023]
Abstract
Low ionic migration is required for a semiconductor material to realize stable high-performance X-ray detection. In this work, successful controlled incorporation of not only methylammonium (MA+ ) and cesium (Cs+ ) cations, but also bromine (Br- ) anions into the FAPbI3 lattice to grow inch-sized stable perovskite single crystal (FAMACs SC) is reported. The smaller cations and anions, comparing to the original FA+ and I- help release lattice stress so that the FAMACs SC shows lower ion migration, enhanced hardness, lower trap density, longer carrier lifetime and diffusion length, higher charge mobility and thermal stability, and better uniformity. Therefore, X-ray detectors made of the superior FAMACs SCs show the highest sensitivity of (3.5 ± 0.2) × 106 μC Gyair -1 cm-2 , about 29 times higher than the latest record of 1.22 × 105 μC Gyair -1 cm-2 for polycrystalline MAPbI3 wafer under the same 40 keV X-ray radiation. Furthermore, the FAMACs SC X-ray detector shows a low detection limit of 42 nGy s-1 , stable dark current, and photocurrent response. Finally, it is demonstrated that high contrast X-ray imaging is realized using the FAMACs SC detector. The effective triple-cation mixed halide strategy and the high crystalline quality make the present FAMACs SCs promising for next-generation X-ray imaging systems.
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Affiliation(s)
- Yucheng Liu
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China
- Department of Chemistry, Northwestern University, Evanston, IL, 60208, USA
| | - Yunxia Zhang
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China
| | - Xuejie Zhu
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China
| | - Jiangshan Feng
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China
| | | | - Weijun Ke
- Department of Chemistry, Northwestern University, Evanston, IL, 60208, USA
| | - Yihui He
- Department of Chemistry, Northwestern University, Evanston, IL, 60208, USA
| | - Xiaodong Ren
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China
| | - Zhou Yang
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China
| | - Fengwei Xiao
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China
| | - Kui Zhao
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China
| | | | - Shengzhong Frank Liu
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China
- Dalian National Laboratory for Clean Energy, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, Liaoning, 116023, China
- University of the Chinese Academy of Sciences, Beijing, 100039, China
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36
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Jaeckel FT, Ambarish CV, Dai H, Liu S, McCammon D, McPheron M, Nelms KL, Roy A, Stueber HR, Bandler SR, Chervenak JA, Sakai K, Smith SJ. Calibration and Testing of Small High-Resolution Transition Edge Sensor Microcalorimeters with Optical Photons. IEEE Trans Appl Supercond 2021; 1:1. [PMID: 33531792 PMCID: PMC7849770 DOI: 10.1109/tasc.2021.3053506] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Pulses of narrow line-width optical photons can be used to calibrate and test sub-2 eV full-width at halfmaximum (FWHM) energy resolution transition-edge sensor (TES) microcalorimeters at low energies (< 1 keV), where it is very challenging to obtain X-ray calibration lines comparable to (or narrower than) the detector resolution. This scheme depends on the ability to resolve the number of 3 eV photons in each pulse, which we have recently demonstrated up to photon numbers of about 300. At LTD-18 we showed preliminary results obtained with this technique on a 0.25 eV baseline resolution TES microcalorimeter designed for the ultra-high-resolution subarray of the Lynx mission. The line-shape was well described by a simple Gaussian. However, the difficulty of delivering photons to the small 46 μm square absorbers resulted in a large thermal crosstalk signal, whose random nature is expected to rapidly degrade the observed energy resolution towards higher photon numbers/energies. We have since improved the coupling between the optical fiber and the TES absorber and report here our current results.
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Affiliation(s)
- Felix T Jaeckel
- Department of Physics, University of Wisconsin-Madison, Madison, WI 53706 USA
| | - C V Ambarish
- Department of Physics, University of Wisconsin-Madison, Madison, WI 53706 USA
| | - Haoran Dai
- Department of Physics, University of Wisconsin-Madison, Madison, WI 53706 USA
| | - Shukai Liu
- Department of Physics, University of Wisconsin-Madison, Madison, WI 53706 USA
| | - Dan McCammon
- Department of Physics, University of Wisconsin-Madison, Madison, WI 53706 USA
| | - Mari McPheron
- Department of Physics, University of Wisconsin-Madison, Madison, WI 53706 USA
| | - Kari L Nelms
- Department of Physics, University of Wisconsin-Madison, Madison, WI 53706 USA
| | - Avirup Roy
- Department of Physics, University of Wisconsin-Madison, Madison, WI 53706 USA
| | - Haley R Stueber
- Department of Physics, University of Wisconsin-Madison, Madison, WI 53706 USA
| | | | | | - Kazuhiro Sakai
- NASA Goddard Space Flight Center, Greenbelt, MD 20771, USA
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37
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Li W, Xu Y, Peng J, Li R, Song J, Huang H, Cui L, Lin Q. Evaporated Perovskite Thick Junctions for X-Ray Detection. ACS Appl Mater Interfaces 2021; 13:2971-2978. [PMID: 33399446 DOI: 10.1021/acsami.0c20973] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
X-ray detection is widely utilized in our daily life, such as in medical diagnosis, security checking, and environmental monitoring. However, most of the commercial X-ray detectors are based on inorganic semiconductors, e.g., Si, CdTe, and Ge, which require complex and costly fabrication processes. Metal halide perovskites have recently emerged as a set of promising candidates for ionizing radiation detection, owing to the high attenuation coefficient, long carrier lifetime, and excellent charge transport properties. Perovskite single crystals have been successfully implemented in X-ray detection, but the fragile single crystals limit the device fabrication and the integration with a read-out circuit. In addition, it is hard to reach inch-size single crystals for real application. Flexible devices based on perovskite films or composite films have also been reported, but either the thickness or charge transport properties are limited by the solution processes. In this work, we introduced thermal co-evaporation to deposit highly efficient formamidinium lead iodide perovskite films. Considering the trade-off between X-ray absorption and charge transport, we optimized the active layer thickness and achieved large-area and flexible X-ray detectors with state-of-the-art device performance, including extremely low dark current and noise, fast response, and high sensitivity of 142.1 μC Gyair-1 cm-2.
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Affiliation(s)
- Wei Li
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan 430072, P. R. China
| | - Yalun Xu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan 430072, P. R. China
| | - Jiali Peng
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan 430072, P. R. China
| | - Ruiming Li
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan 430072, P. R. China
| | - Jiannan Song
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan 430072, P. R. China
| | - Huihuang Huang
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan 430072, P. R. China
| | - Lihao Cui
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan 430072, P. R. China
| | - Qianqian Lin
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan 430072, P. R. China
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38
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Desjardins K, Medjoubi K, Sacchi M, Popescu H, Gaudemer R, Belkhou R, Stanescu S, Swaraj S, Besson A, Vijayakumar J, Pautard S, Noureddine A, Mercère P, Da Silva P, Orsini F, Menneglier C, Jaouen N. Backside-illuminated scientific CMOS detector for soft X-ray resonant scattering and ptychography. J Synchrotron Radiat 2020; 27:1577-1589. [PMID: 33147182 DOI: 10.1107/s160057752001262x] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/03/2020] [Accepted: 09/16/2020] [Indexed: 06/11/2023]
Abstract
The impressive progress in the performance of synchrotron radiation sources is nowadays driven by the so-called `ultimate storage ring' projects which promise an unprecedented improvement in brightness. Progress on the detector side has not always been at the same pace, especially as far as soft X-ray 2D detectors are concerned. While the most commonly used detectors are still based on microchannel plates or CCD technology, recent developments of CMOS (complementary metal oxide semiconductor)-type detectors will play an ever more important role as 2D detectors in the soft X-ray range. This paper describes the capabilities and performance of a camera equipped with a newly commercialized backside-illuminated scientific CMOS (sCMOS-BSI) sensor, integrated in a vacuum environment, for soft X-ray experiments at synchrotron sources. The 4 Mpixel sensor reaches a frame rate of up to 48 frames s-1 while matching the requirements for X-ray experiments in terms of high-intensity linearity (>98%), good spatial homogeneity (<1%), high charge capacity (up to 80 ke-), and low readout noise (down to 2 e- r.m.s.) and dark current (3 e- per second per pixel). Performance evaluations in the soft X-ray range have been carried out at the METROLOGIE beamline of the SOLEIL synchrotron. The quantum efficiency, spatial resolution (24 line-pairs mm-1), energy resolution (<100 eV) and radiation damage versus the X-ray dose (<600 Gy) have been measured in the energy range from 40 to 2000 eV. In order to illustrate the capabilities of this new sCMOS-BSI sensor, several experiments have been performed at the SEXTANTS and HERMES soft X-ray beamlines of the SOLEIL synchrotron: acquisition of a coherent diffraction pattern from a pinhole at 186 eV, a scattering experiment from a nanostructured Co/Cu multilayer at 767 eV and ptychographic imaging in transmission at 706 eV.
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Affiliation(s)
| | - Kadda Medjoubi
- Synchrotron SOLEIL, Saint-Aubin, Gif-sur-Yvette, 91192, France
| | - Maurizio Sacchi
- Synchrotron SOLEIL, Saint-Aubin, Gif-sur-Yvette, 91192, France
| | - Horia Popescu
- Synchrotron SOLEIL, Saint-Aubin, Gif-sur-Yvette, 91192, France
| | - Roland Gaudemer
- Synchrotron SOLEIL, Saint-Aubin, Gif-sur-Yvette, 91192, France
| | - Rachid Belkhou
- Synchrotron SOLEIL, Saint-Aubin, Gif-sur-Yvette, 91192, France
| | - Stefan Stanescu
- Synchrotron SOLEIL, Saint-Aubin, Gif-sur-Yvette, 91192, France
| | - Sufal Swaraj
- Synchrotron SOLEIL, Saint-Aubin, Gif-sur-Yvette, 91192, France
| | - Adrien Besson
- Synchrotron SOLEIL, Saint-Aubin, Gif-sur-Yvette, 91192, France
| | | | | | | | - Pascal Mercère
- Synchrotron SOLEIL, Saint-Aubin, Gif-sur-Yvette, 91192, France
| | - Paulo Da Silva
- Synchrotron SOLEIL, Saint-Aubin, Gif-sur-Yvette, 91192, France
| | - Fabienne Orsini
- Synchrotron SOLEIL, Saint-Aubin, Gif-sur-Yvette, 91192, France
| | | | - Nicolas Jaouen
- Synchrotron SOLEIL, Saint-Aubin, Gif-sur-Yvette, 91192, France
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39
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Song X, Cui Q, Liu Y, Xu Z, Cohen H, Ma C, Fan Y, Zhang Y, Ye H, Peng Z, Li R, Chen Y, Wang J, Sun H, Yang Z, Liu Z, Yang Z, Huang W, Hodes G, Liu SF, Zhao K. Metal-Free Halide Perovskite Single Crystals with Very Long Charge Lifetimes for Efficient X-ray Imaging. Adv Mater 2020; 32:e2003353. [PMID: 32930461 DOI: 10.1002/adma.202003353] [Citation(s) in RCA: 31] [Impact Index Per Article: 7.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/16/2020] [Revised: 08/13/2020] [Indexed: 06/11/2023]
Abstract
Metal-free halide perovskites, as a specific category of the perovskite family, have recently emerged as novel semiconductors for organic ferroelectrics and promise the wide chemical diversity of the ABX3 perovskite structure with mechanical flexibility, light weight, and eco-friendly processing. However, after the initial discovery 17 years ago, there has been no experimental information about their charge transport properties and only one brief mention of their optoelectronic properties. Here, growth of large single crystals of metal-free halide perovskite DABCO-NH4 Br3 (DABCO = N-N'-diazabicyclo[2.2.2]octonium) is reported together with characterization of their instrinsic optical and electronic properties and demonstration, of metal-free halide perovskite optoelectronics. The results reveal that the crystals have an unusually large semigap of ≈16 eV and a specific band nature with the valence band maximum and the conduction band minimum mainly dominated by the halide and DABCO2+ , respectively. The unusually large semigap rationalizes extremely long lifetimes approaching the millisecond regime, leading to very high charge diffusion lengths (tens of μm). The crystals also exhibit high X-ray attenuation as well as being lightweight. All these properties translate to high-performance X-ray imaging with sensitivity up to 173 μC Gyair -1 cm-2 . This makes metal-free perovskites novel candidates for the next generation of optoelectronics.
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Affiliation(s)
- Xin Song
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China
| | - Qingyue Cui
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China
- Dalian National Laboratory for Clean Energy, iChEM, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, 116023, China
- Department of Chemical Physics, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), University of Science and Technology of China, Hefei, 230026, China
| | - Yucheng Liu
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China
| | - Zhuo Xu
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China
| | - Hagai Cohen
- Department of Chemical Research Support, Weizmann Institute of Science, Rehovot, 76100, Israel
| | - Chuang Ma
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China
| | - Yuanyuan Fan
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China
| | - Yunxia Zhang
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China
| | - Haochen Ye
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China
| | - Zhanhui Peng
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China
| | - Ruipeng Li
- NSLS II, Brookhaven National Lab, Upton, NY, 11973, USA
| | - Yonghua Chen
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), Nanjing, Jiangsu, 211800, China
| | - Jianpu Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), Nanjing, Jiangsu, 211800, China
| | - Huaming Sun
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China
| | - Zhou Yang
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China
| | - Zhike Liu
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China
| | - Zupei Yang
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China
| | - Wei Huang
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an, Shaanxi, 710072, China
| | - Gary Hodes
- Department of Materials and Interfaces, Weizmann Institute of Science, Rehovot, 76100, Israel
| | - Shengzhong Frank Liu
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China
- Dalian National Laboratory for Clean Energy, iChEM, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, 116023, China
| | - Kui Zhao
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China
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40
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Xin B, Alaal N, Mitra S, Subahi A, Pak Y, Almalawi D, Alwadai N, Lopatin S, Roqan IS. Identifying Carrier Behavior in Ultrathin Indirect-Bandgap CsPbX 3 Nanocrystal Films for Use in UV/Visible-Blind High-Energy Detectors. Small 2020; 16:e2004513. [PMID: 33006244 DOI: 10.1002/smll.202004513] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/26/2020] [Indexed: 06/11/2023]
Abstract
High-energy radiation detectors such as X-ray detectors with low light photoresponse characteristics are used for several applications including, space, medical, and military devices. Here, an indirect bandgap inorganic perovskite-based X-ray detector is reported. The indirect bandgap nature of perovskite materials is revealed through optical characterizations, time-resolved photoluminescence (TRPL), and theoretical simulations, demonstrating that the differences in temperature-dependent carrier lifetime related to CsPbX3 (X = Br, I) perovskite composition are due to the changes in the bandgap structure. TRPL, theoretical analyses, and X-ray radiation measurements reveal that the high response of the UV/visible-blind yellow-phase CsPbI3 under high-energy X-ray exposure is attributed to the nature of the indirect bandgap structure of CsPbX3 . The yellow-phase CsPbI3 -based X-ray detector achieves a relatively high sensitivity of 83.6 μCGyair-1 cm-2 (under 1.7 mGyair s-1 at an electron field of 0.17 V μm-1 used for medical diagnostics) although the active layer is based solely on an ultrathin (≈6.6 μm) CsPbI3 nanocrystal film, exceeding the values obtained for commercial X-ray detectors, and further confirming good material quality. This CsPbX3 X-ray detector is sufficient for cost-effective device miniaturization based on a simple design.
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Affiliation(s)
- Bin Xin
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Naresh Alaal
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Somak Mitra
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Ahmad Subahi
- College of Science and Health Professions, King Saud Bin Abdulaziz University for Health Sciences (KSAU-HS), Jeddah, 22384, Saudi Arabia
| | - Yusin Pak
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Dhaifallah Almalawi
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
- Physics Department, Faculty of Science, Taif University, P. O. Box 888, Taif, 21974, Saudi Arabia
| | - Norah Alwadai
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
- Department of Physics, College of Sciences, Princess Nourah bint Abdulrahman University (PNU), Riyadh, 11671, Saudi Arabia
| | - Sergei Lopatin
- Imaging and Characterization Core Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Iman S Roqan
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
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41
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Kato K, Shigeta K. On-demand correction for X-ray response non-uniformity in microstrip detectors by a data-driven approach. J Synchrotron Radiat 2020; 27:1172-1179. [PMID: 32876591 PMCID: PMC7467352 DOI: 10.1107/s1600577520008929] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/22/2020] [Accepted: 07/01/2020] [Indexed: 06/11/2023]
Abstract
A statistical approach, which was previously developed to correct scattering data for X-ray response non-uniformity (XRNU) in microstrip detectors, has been improved to significantly reduce the correcting time. The improved algorithm has succeeded in increasing the utilization rate of data acquired for reference intensity to 98%. As a result, the correcting time was reduced from half a day to half an hour, which was shorter than the typical measuring time of a sample. Moreover, the present approach was found to yield better correction results than the previous one. The data-driven approach enabled the on-demand correction for XRNU according to the detector and experimental settings. The present study will encourage the correction of scattering data for XRNU in area detectors.
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Affiliation(s)
- Kenichi Kato
- RIKEN SPring-8 Center, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5148, Japan
- JST, PRESTO, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan
| | - Kazuya Shigeta
- Nippon Gijutsu Center Co. Ltd, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5148, Japan
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42
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Tie S, Zhao W, Xin D, Zhang M, Long J, Chen Q, Zheng X, Zhu J, Zhang WH. Robust Fabrication of Hybrid Lead-Free Perovskite Pellets for Stable X-ray Detectors with Low Detection Limit. Adv Mater 2020; 32:e2001981. [PMID: 32588518 DOI: 10.1002/adma.202001981] [Citation(s) in RCA: 64] [Impact Index Per Article: 16.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/22/2020] [Revised: 05/26/2020] [Indexed: 05/21/2023]
Abstract
X-ray detectors are widely utilized in medical diagnostics and nondestructive product inspection. Halide perovskites are recently demonstrated as excellent candidates for direct X-ray detection. However, it is still challenging to obtain high quality perovskites with millimeter-thick over a large area for high performance, stable X-ray detectors. Here, methylammonium bismuth iodide (MA3 Bi2 I9 ) polycrystalline pellets (PPs) are developed by a robust, cost effective, and scalable cold isostatic-pressing for fabricating X-ray detectors with low limit of detection (LoD) and superior operational stability. The MA3 Bi2 I9 -PPs possess a high resistivity of 2.28 × 1011 Ω cm and low dark carrier concentration of ≈107 cm-3 , and balanced mobility of ≈2 cm2 V-1 s-1 for electrons and holes. These merits enable a sensitivity of 563 μC Gyair -1 cm-2 , a detection efficiency of 28.8%, and an LoD of 9.3 nGyair s-1 for MA3 Bi2 I9 -PPs detectors, and the LoD is much lower than the dose rate required for X-ray diagnostics used currently (5.5 μGyair s-1 ). In addition, the MA3 Bi2 I9 -PPs detectors work stably under high working bias field up to 2000 V cm-1 after sensing an integrated dose >320 Gyair with continuous X-ray radiation, demonstrating its competitive advantage in practical application. These findings provide an approach to explore a new generation of low LoD, stable and green X-ray detectors based on MA3 Bi2 I9 -PPs.
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Affiliation(s)
- Shujie Tie
- Sichuan Research Center of New Materials, Institute of Chemical Materials, China Academy of Engineering Physics, Chengdu, 610200, China
- Department of Materials Science, Sichuan University, Chengdu, 610064, China
| | - Wei Zhao
- Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang, 621900, China
| | - Deyu Xin
- Sichuan Research Center of New Materials, Institute of Chemical Materials, China Academy of Engineering Physics, Chengdu, 610200, China
- Department of Materials Science, Sichuan University, Chengdu, 610064, China
| | - Min Zhang
- Sichuan Research Center of New Materials, Institute of Chemical Materials, China Academy of Engineering Physics, Chengdu, 610200, China
- School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Jidong Long
- Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang, 621900, China
| | - Qi Chen
- School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Xiaojia Zheng
- Sichuan Research Center of New Materials, Institute of Chemical Materials, China Academy of Engineering Physics, Chengdu, 610200, China
| | - Jianguo Zhu
- Department of Materials Science, Sichuan University, Chengdu, 610064, China
| | - Wen-Hua Zhang
- Sichuan Research Center of New Materials, Institute of Chemical Materials, China Academy of Engineering Physics, Chengdu, 610200, China
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Wang W, Meng H, Qi H, Xu H, Du W, Yang Y, Yi Y, Jing S, Xu S, Hong F, Qin J, Huang J, Xu Z, Zhu Y, Xu R, Lai J, Xu F, Wang L, Zhu J. Electronic-Grade High-Quality Perovskite Single Crystals by a Steady Self-Supply Solution Growth for High-Performance X-ray Detectors. Adv Mater 2020; 32:e2001540. [PMID: 32627892 DOI: 10.1002/adma.202001540] [Citation(s) in RCA: 25] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/03/2020] [Revised: 05/01/2020] [Indexed: 05/21/2023]
Abstract
High-quality perovskite single crystals with large size are highly desirable for the fundamental research and high energy detection application. Here, a simple and convenient solution method, featuring continuous-mass transport process (CMTP) by a steady self-supply way, is shown to keep the growth of semiconductor single crystals continuously stable at a constant growth rate until an expected crystal size is achieved. A significantly reduced full width at half-maximum (36 arcsec) of the (400) plane from the X-ray rocking curve indicates a low angular dislocation of 6.8 × 106 cm-2 and hence a higher crystalline quality for the CH3 NH3 PbI3 (MAPbI3 ) single crystals grown by CMTP as compared to the conventional inverse temperature crystallization (ITC) method. Furthermore, the CMTP-based single crystals have lower trap density, reduced by nearly 200% to 4.5 × 109 cm-3 , higher mobility increased by 187% to 150.2 cm2 V-1 s-1 , and higher mobility-lifetime product increased by around 450% to 1.6 × 10-3 cm2 V-1 , as compared with the ITC-grown reference sample. The high performance of the CMTP-based MAPbI3 X-ray detector is comparable to that of a traditional high-quality CdZnTe device, indicating the CMTP method as being a cost-efficient strategy for high-quality electronic-grade semiconductor single crystals.
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Affiliation(s)
- Wenzhen Wang
- School of Materials Science and Engineering, Shanghai University, Nanchen Road, Shanghai, 200444, China
| | - Hua Meng
- School of Materials Science and Engineering, Shanghai University, Nanchen Road, Shanghai, 200444, China
| | - Huanzhen Qi
- School of Materials Science and Engineering, Shanghai University, Nanchen Road, Shanghai, 200444, China
| | - Haitao Xu
- Department of Physics, Shaoxing University, 508 Huancheng West Road, Shaoxing, 312000, China
| | - Wenbin Du
- School of Materials Science and Engineering, Shanghai University, Nanchen Road, Shanghai, 200444, China
| | - Yiheng Yang
- School of Materials Science and Engineering, Shanghai University, Nanchen Road, Shanghai, 200444, China
| | - Yongsheng Yi
- School of Materials Science and Engineering, Shanghai University, Nanchen Road, Shanghai, 200444, China
| | - Shengqi Jing
- School of Materials Science and Engineering, Shanghai University, Nanchen Road, Shanghai, 200444, China
| | - Shanhu Xu
- School of Materials Science and Engineering, Shanghai University, Nanchen Road, Shanghai, 200444, China
| | - Feng Hong
- SHU-Solar E R&D Lab, Department of Physics, College of Sciences, Shanghai Key Laboratory of High Temperature Superconductors, Shanghai University, 99 Shangda Road, Shanghai, 200444, China
| | - Juan Qin
- School of Materials Science and Engineering, Shanghai University, Nanchen Road, Shanghai, 200444, China
| | - Jian Huang
- School of Materials Science and Engineering, Shanghai University, Nanchen Road, Shanghai, 200444, China
| | - Zhan Xu
- School of Materials Science and Engineering, Shanghai University, Nanchen Road, Shanghai, 200444, China
| | - Yanyan Zhu
- School of Materials Science and Engineering, Shanghai University, Nanchen Road, Shanghai, 200444, China
| | - Run Xu
- School of Materials Science and Engineering, Shanghai University, Nanchen Road, Shanghai, 200444, China
| | - Jianming Lai
- School of Materials Science and Engineering, Shanghai University, Nanchen Road, Shanghai, 200444, China
| | - Fei Xu
- SHU-Solar E R&D Lab, Department of Physics, College of Sciences, Shanghai Key Laboratory of High Temperature Superconductors, Shanghai University, 99 Shangda Road, Shanghai, 200444, China
| | - Linjun Wang
- School of Materials Science and Engineering, Shanghai University, Nanchen Road, Shanghai, 200444, China
| | - Jingtao Zhu
- MOE Key Laboratory of Advanced Micro-structured Materials, School of Physics Science and Engineering, Tongji University, 1239 Siping Road, Shanghai, 200092, China
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44
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Pan W, Yang B, Niu G, Xue KH, Du X, Yin L, Zhang M, Wu H, Miao XS, Tang J. Hot-Pressed CsPbBr 3 Quasi-Monocrystalline Film for Sensitive Direct X-ray Detection. Adv Mater 2019; 31:e1904405. [PMID: 31523875 DOI: 10.1002/adma.201904405] [Citation(s) in RCA: 81] [Impact Index Per Article: 16.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/10/2019] [Revised: 08/30/2019] [Indexed: 05/03/2023]
Abstract
An X-ray detector with high sensitivity would be able to increase the generated signal and reduce the dose rate; thus, this type of detector is beneficial for applications such as medical imaging and product inspection. The inorganic lead halide perovskite CsPbBr3 possesses relatively larger density and a higher atomic number in contrast to its hybrid counterpart. Therefore, it is expected to provide high detection sensitivity for X-rays; however, it has rarely been studied as a direct X-ray detector. Here, a hot-pressing method is employed to fabricate thick quasi-monocrystalline CsPbBr3 films, and a record sensitivity of 55 684 µC Gyair -1 cm-2 is achieved, surpassing all other X-ray detectors (direct and indirect). The hot-pressing method is simple and produces thick quasi-monocrystalline CsPbBr3 films with uniform orientations. The high crystalline quality of the CsPbBr3 films and the formation of self-formed shallow bromide vacancy defects during the high-temperature process result in a large µτ product and, therefore, a high photoconductivity gain factor and high detection sensitivity. The detectors also exhibit relatively fast response speed, negligible baseline drift, and good stability, making a CsPbBr3 X-ray detector extremely competitive for high-contrast X-ray detections.
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Affiliation(s)
- Weicheng Pan
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, Hubei Province, China
| | - Bo Yang
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, Hubei Province, China
| | - Guangda Niu
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, Hubei Province, China
| | - Kan-Hao Xue
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, Hubei Province, China
| | - Xinyuan Du
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, Hubei Province, China
| | - Lixiao Yin
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, Hubei Province, China
| | - Muyi Zhang
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, Hubei Province, China
| | - Haodi Wu
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, Hubei Province, China
| | - Xiang-Shui Miao
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, Hubei Province, China
| | - Jiang Tang
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, Hubei Province, China
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45
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Jaeckel FT, Ambarish CV, Christensen N, Gruenke R, Hu L, McCammon D, McPheron M, Meyer M, Nelms KL, Roy A, Wulf D, Zhang S, Zhou Y, Adams JS, Bandler SR, Chervenak JA, Datesman AM, Eckart ME, Ewin AJ, Finkbeiner FM, Kelley R, Kilbourne CA, Miniussi AR, Porter FS, Sadleir JE, Sakai K, Smith SJ, Wakeham N, Wassell E, Yoon W, Morgan KM, Schmidt DR, Swetz DS, Ullom JN. Energy calibration of high-resolution X-Ray TES microcalorimeters with 3 eV optical photons. IEEE Trans Appl Supercond 2019; 29:2100104. [PMID: 31186605 PMCID: PMC6557579 DOI: 10.1109/tasc.2019.2899856] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
With the improving energy resolution of transitionedge sensor (TES) based microcalorimeters, performance verification and calibration of these detectors has become increasingly challenging, especially in the energy range below 1 keV where fluorescent atomic X-ray lines have linewidths that are wider than the detector energy resolution and require impractically high statistics to determine the gain and deconvolve the instrumental profile. Better behaved calibration sources such as grating monochromators are too cumbersome for space missions and are difficult to use in the lab. As an alternative, we are exploring the use of pulses of 3 eV optical photons delivered by an optical fiber to generate combs of known energies with known arrival times. Here, we discuss initial results of this technique obtained with 2 eV and 0.7 eV resolution X-ray microcalorimeters. With the 2 eV detector, we have achieved photon number resolution for pulses with mean photon number up to 133 (corresponding to 0.4 keV).
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Affiliation(s)
- F T Jaeckel
- Department of Physics, University of Wisconsin-Madison, 1150 University Avenue, Madison, WI 53706
| | - C V Ambarish
- Department of Physics, University of Wisconsin-Madison, 1150 University Avenue, Madison, WI 53706
| | - N Christensen
- Department of Physics, University of Wisconsin-Madison, 1150 University Avenue, Madison, WI 53706
| | - R Gruenke
- Department of Physics, University of Wisconsin-Madison, 1150 University Avenue, Madison, WI 53706
| | - L Hu
- Department of Physics, University of Wisconsin-Madison, 1150 University Avenue, Madison, WI 53706
| | - D McCammon
- Department of Physics, University of Wisconsin-Madison, 1150 University Avenue, Madison, WI 53706
| | - M McPheron
- Department of Physics, University of Wisconsin-Madison, 1150 University Avenue, Madison, WI 53706
| | - M Meyer
- Department of Physics, University of Wisconsin-Madison, 1150 University Avenue, Madison, WI 53706
| | - K L Nelms
- Department of Physics, University of Wisconsin-Madison, 1150 University Avenue, Madison, WI 53706
| | - A Roy
- Department of Physics, University of Wisconsin-Madison, 1150 University Avenue, Madison, WI 53706
| | - D Wulf
- Department of Physics, University of Wisconsin-Madison, 1150 University Avenue, Madison, WI 53706
| | - S Zhang
- Department of Physics, University of Wisconsin-Madison, 1150 University Avenue, Madison, WI 53706
| | - Y Zhou
- Department of Physics, University of Wisconsin-Madison, 1150 University Avenue, Madison, WI 53706
| | - J S Adams
- NASA Goddard Space Flight Center, 8800 Greenbelt Rd, Greenbelt, MD 20771
| | - S R Bandler
- NASA Goddard Space Flight Center, 8800 Greenbelt Rd, Greenbelt, MD 20771
| | - J A Chervenak
- NASA Goddard Space Flight Center, 8800 Greenbelt Rd, Greenbelt, MD 20771
| | - A M Datesman
- NASA Goddard Space Flight Center, 8800 Greenbelt Rd, Greenbelt, MD 20771
| | - M E Eckart
- NASA Goddard Space Flight Center, 8800 Greenbelt Rd, Greenbelt, MD 20771
| | - A J Ewin
- NASA Goddard Space Flight Center, 8800 Greenbelt Rd, Greenbelt, MD 20771
| | - F M Finkbeiner
- NASA Goddard Space Flight Center, 8800 Greenbelt Rd, Greenbelt, MD 20771
| | - R Kelley
- NASA Goddard Space Flight Center, 8800 Greenbelt Rd, Greenbelt, MD 20771
| | - C A Kilbourne
- NASA Goddard Space Flight Center, 8800 Greenbelt Rd, Greenbelt, MD 20771
| | - A R Miniussi
- NASA Goddard Space Flight Center, 8800 Greenbelt Rd, Greenbelt, MD 20771
| | - F S Porter
- NASA Goddard Space Flight Center, 8800 Greenbelt Rd, Greenbelt, MD 20771
| | - J E Sadleir
- NASA Goddard Space Flight Center, 8800 Greenbelt Rd, Greenbelt, MD 20771
| | - K Sakai
- NASA Goddard Space Flight Center, 8800 Greenbelt Rd, Greenbelt, MD 20771
| | - S J Smith
- NASA Goddard Space Flight Center, 8800 Greenbelt Rd, Greenbelt, MD 20771
| | - N Wakeham
- NASA Goddard Space Flight Center, 8800 Greenbelt Rd, Greenbelt, MD 20771
| | - E Wassell
- NASA Goddard Space Flight Center, 8800 Greenbelt Rd, Greenbelt, MD 20771
| | - W Yoon
- NASA Goddard Space Flight Center, 8800 Greenbelt Rd, Greenbelt, MD 20771
| | - K M Morgan
- National Institute for Standards and Technology, 325 Broadway, Boulder, CO 80305
| | - D R Schmidt
- National Institute for Standards and Technology, 325 Broadway, Boulder, CO 80305
| | - D S Swetz
- National Institute for Standards and Technology, 325 Broadway, Boulder, CO 80305
| | - J N Ullom
- National Institute for Standards and Technology, 325 Broadway, Boulder, CO 80305
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46
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Tinti G, Marchetto H, Vaz CAF, Kleibert A, Andrä M, Barten R, Bergamaschi A, Brückner M, Cartier S, Dinapoli R, Franz T, Fröjdh E, Greiffenberg D, Lopez-Cuenca C, Mezza D, Mozzanica A, Nolting F, Ramilli M, Redford S, Ruat M, Ruder C, Schädler L, Schmidt T, Schmitt B, Schütz F, Shi X, Thattil D, Vetter S, Zhang J. The EIGER detector for low-energy electron microscopy and photoemission electron microscopy. J Synchrotron Radiat 2017; 24:963-974. [PMID: 28862618 DOI: 10.1107/s1600577517009109] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/16/2017] [Accepted: 06/18/2017] [Indexed: 06/07/2023]
Abstract
EIGER is a single-photon-counting hybrid pixel detector developed at the Paul Scherrer Institut, Switzerland. It is designed for applications at synchrotron light sources with photon energies above 5 keV. Features of EIGER include a small pixel size (75 µm × 75 µm), a high frame rate (up to 23 kHz), a small dead-time between frames (down to 3 µs) and a dynamic range up to 32-bit. In this article, the use of EIGER as a detector for electrons in low-energy electron microscopy (LEEM) and photoemission electron microscopy (PEEM) is reported. It is demonstrated that, with only a minimal modification to the sensitive part of the detector, EIGER is able to detect electrons emitted or reflected by the sample and accelerated to 8-20 keV. The imaging capabilities are shown to be superior to the standard microchannel plate detector for these types of applications. This is due to the much higher signal-to-noise ratio, better homogeneity and improved dynamic range. In addition, the operation of the EIGER detector is not affected by radiation damage from electrons in the present energy range and guarantees more stable performance over time. To benchmark the detector capabilities, LEEM experiments are performed on selected surfaces and the magnetic and electronic properties of individual iron nanoparticles with sizes ranging from 8 to 22 nm are detected using the PEEM endstation at the Surface/Interface Microscopy (SIM) beamline of the Swiss Light Source.
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Affiliation(s)
- G Tinti
- Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - H Marchetto
- ELMITEC Elektronenmikroskopie GmbH, D-38678 Clausthal-Zellerfeld, Germany
| | - C A F Vaz
- Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - A Kleibert
- Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - M Andrä
- Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - R Barten
- Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - A Bergamaschi
- Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - M Brückner
- Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - S Cartier
- Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - R Dinapoli
- Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - T Franz
- ELMITEC Elektronenmikroskopie GmbH, D-38678 Clausthal-Zellerfeld, Germany
| | - E Fröjdh
- Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - D Greiffenberg
- Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - C Lopez-Cuenca
- Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - D Mezza
- Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - A Mozzanica
- Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - F Nolting
- Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - M Ramilli
- Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - S Redford
- Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - M Ruat
- Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - Ch Ruder
- Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - L Schädler
- Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - Th Schmidt
- Fritz-Haber-Institute of the Max-Planck-Society, Department of Chemical Physics, D-14195 Berlin, Germany
| | - B Schmitt
- Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - F Schütz
- ELMITEC Elektronenmikroskopie GmbH, D-38678 Clausthal-Zellerfeld, Germany
| | - X Shi
- Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - D Thattil
- Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - S Vetter
- Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - J Zhang
- Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
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47
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Tinti G, Marchetto H, Vaz CAF, Kleibert A, Andrä M, Barten R, Bergamaschi A, Brückner M, Cartier S, Dinapoli R, Franz T, Fröjdh E, Greiffenberg D, Lopez-Cuenca C, Mezza D, Mozzanica A, Nolting F, Ramilli M, Redford S, Ruat M, Ruder C, Schädler L, Schmidt T, Schmitt B, Schütz F, Shi X, Thattil D, Vetter S, Zhang J. The EIGER detector for low-energy electron microscopy and photoemission electron microscopy. J Synchrotron Radiat 2017. [PMID: 28862618 DOI: 10.1088/1748-0221/13/01/c01027] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/11/2023]
Abstract
EIGER is a single-photon-counting hybrid pixel detector developed at the Paul Scherrer Institut, Switzerland. It is designed for applications at synchrotron light sources with photon energies above 5 keV. Features of EIGER include a small pixel size (75 µm × 75 µm), a high frame rate (up to 23 kHz), a small dead-time between frames (down to 3 µs) and a dynamic range up to 32-bit. In this article, the use of EIGER as a detector for electrons in low-energy electron microscopy (LEEM) and photoemission electron microscopy (PEEM) is reported. It is demonstrated that, with only a minimal modification to the sensitive part of the detector, EIGER is able to detect electrons emitted or reflected by the sample and accelerated to 8-20 keV. The imaging capabilities are shown to be superior to the standard microchannel plate detector for these types of applications. This is due to the much higher signal-to-noise ratio, better homogeneity and improved dynamic range. In addition, the operation of the EIGER detector is not affected by radiation damage from electrons in the present energy range and guarantees more stable performance over time. To benchmark the detector capabilities, LEEM experiments are performed on selected surfaces and the magnetic and electronic properties of individual iron nanoparticles with sizes ranging from 8 to 22 nm are detected using the PEEM endstation at the Surface/Interface Microscopy (SIM) beamline of the Swiss Light Source.
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Affiliation(s)
- G Tinti
- Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - H Marchetto
- ELMITEC Elektronenmikroskopie GmbH, D-38678 Clausthal-Zellerfeld, Germany
| | - C A F Vaz
- Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - A Kleibert
- Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - M Andrä
- Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - R Barten
- Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - A Bergamaschi
- Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - M Brückner
- Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - S Cartier
- Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - R Dinapoli
- Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - T Franz
- ELMITEC Elektronenmikroskopie GmbH, D-38678 Clausthal-Zellerfeld, Germany
| | - E Fröjdh
- Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - D Greiffenberg
- Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - C Lopez-Cuenca
- Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - D Mezza
- Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - A Mozzanica
- Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - F Nolting
- Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - M Ramilli
- Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - S Redford
- Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - M Ruat
- Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - Ch Ruder
- Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - L Schädler
- Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - Th Schmidt
- Fritz-Haber-Institute of the Max-Planck-Society, Department of Chemical Physics, D-14195 Berlin, Germany
| | - B Schmitt
- Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - F Schütz
- ELMITEC Elektronenmikroskopie GmbH, D-38678 Clausthal-Zellerfeld, Germany
| | - X Shi
- Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - D Thattil
- Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - S Vetter
- Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - J Zhang
- Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
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48
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Casanas A, Warshamanage R, Finke AD, Panepucci E, Olieric V, Nöll A, Tampé R, Brandstetter S, Förster A, Mueller M, Schulze-Briese C, Bunk O, Wang M. EIGER detector: application in macromolecular crystallography. Acta Crystallogr D Struct Biol 2016; 72:1036-48. [PMID: 27599736 PMCID: PMC5013597 DOI: 10.1107/s2059798316012304] [Citation(s) in RCA: 82] [Impact Index Per Article: 10.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/09/2016] [Accepted: 07/29/2016] [Indexed: 11/24/2022] Open
Abstract
The development of single-photon-counting detectors, such as the PILATUS, has been a major recent breakthrough in macromolecular crystallography, enabling noise-free detection and novel data-acquisition modes. The new EIGER detector features a pixel size of 75 × 75 µm, frame rates of up to 3000 Hz and a dead time as low as 3.8 µs. An EIGER 1M and EIGER 16M were tested on Swiss Light Source beamlines X10SA and X06SA for their application in macromolecular crystallography. The combination of fast frame rates and a very short dead time allows high-quality data acquisition in a shorter time. The ultrafine ϕ-slicing data-collection method is introduced and validated and its application in finding the optimal rotation angle, a suitable rotation speed and a sufficient X-ray dose are presented. An improvement of the data quality up to slicing at one tenth of the mosaicity has been observed, which is much finer than expected based on previous findings. The influence of key data-collection parameters on data quality is discussed.
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Affiliation(s)
- Arnau Casanas
- Swiss Light Source, Paul Scherrer Institute, 5232 Villigen, Switzerland
| | | | - Aaron D. Finke
- Swiss Light Source, Paul Scherrer Institute, 5232 Villigen, Switzerland
| | | | - Vincent Olieric
- Swiss Light Source, Paul Scherrer Institute, 5232 Villigen, Switzerland
| | - Anne Nöll
- Institute of Biochemistry, Biocenter, Goethe University Frankfurt, Max-von-Laue-Strasse 9, 60438 Frankfurt am Main, Germany
| | - Robert Tampé
- Institute of Biochemistry, Biocenter, Goethe University Frankfurt, Max-von-Laue-Strasse 9, 60438 Frankfurt am Main, Germany
| | | | | | - Marcus Mueller
- DECTRIS Ltd, Taefernweg 1, 5405 Baden-Dättwil, Switzerland
| | | | - Oliver Bunk
- Swiss Light Source, Paul Scherrer Institute, 5232 Villigen, Switzerland
| | - Meitian Wang
- Swiss Light Source, Paul Scherrer Institute, 5232 Villigen, Switzerland
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Ciavatti A, Capria E, Fraleoni-Morgera A, Tromba G, Dreossi D, Sellin PJ, Cosseddu P, Bonfiglio A, Fraboni B. Toward Low-Voltage and Bendable X-Ray Direct Detectors Based on Organic Semiconducting Single Crystals. Adv Mater 2015; 27:7213-7220. [PMID: 26445101 DOI: 10.1002/adma.201503090] [Citation(s) in RCA: 29] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/26/2015] [Revised: 07/24/2015] [Indexed: 06/05/2023]
Abstract
Organic materials have been mainly proposed as ionizing radiation detectors in the indirect conversion approach. The first thin and bendable X-ray direct detectors are realized (directly converting X-photons into an electric signal) based on organic semiconducting single crystals that possess enhanced sensitivity, low operating voltage (≈5 V), and a minimum detectable dose rate of 50 μGy s(-1) .
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Affiliation(s)
- Andrea Ciavatti
- Department of Physics and Astronomy, University of Bologna, Viale Berti-Pichat 6/2, 40127, Bologna, Italy
| | - Ennio Capria
- Elettra-Sincrotrone Trieste, Area Science Park, Strada Statale 14, km 163.5, 34149, Basovizza, Trieste, Italy
| | - Alessandro Fraleoni-Morgera
- Elettra-Sincrotrone Trieste, Area Science Park, Strada Statale 14, km 163.5, 34149, Basovizza, Trieste, Italy
- Department of Engineering and Architecture, University of Trieste, Via Alfonso Valerio 6/1, Trieste, 34127, Italy
| | - Giuliana Tromba
- Elettra-Sincrotrone Trieste, Area Science Park, Strada Statale 14, km 163.5, 34149, Basovizza, Trieste, Italy
| | - Diego Dreossi
- Elettra-Sincrotrone Trieste, Area Science Park, Strada Statale 14, km 163.5, 34149, Basovizza, Trieste, Italy
| | - Paul J Sellin
- Department of Physics, University of Surrey, GU2 7XH, Guildford, Surrey, UK
| | - Piero Cosseddu
- Department of Electrical and Electronic Engineering, University of Cagliari, Via Marengo 2, 09123, Cagliari, Italy
| | - Annalisa Bonfiglio
- Department of Electrical and Electronic Engineering, University of Cagliari, Via Marengo 2, 09123, Cagliari, Italy
| | - Beatrice Fraboni
- Department of Physics and Astronomy, University of Bologna, Viale Berti-Pichat 6/2, 40127, Bologna, Italy
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Figueroa RG, Santibañez M, Valdes CN, Valente M. Characterization of hemispherical area X-ray detector based on set of proportional counters with needle anodes. Appl Radiat Isot 2016; 107:191-4. [PMID: 26519921 DOI: 10.1016/j.apradiso.2015.10.027] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/09/2012] [Revised: 10/22/2015] [Accepted: 10/22/2015] [Indexed: 11/21/2022]
Abstract
This work introduces a new, versatile and robust X-ray detector with hemispherical 2π geometry, based on a set of 15 small cylindrical proportional counters located in a hexagonal and pentagonal fullerene C60 pattern, at the same distance from the center (where a sample is placed). The counteranode consists of stainless steel sewing needles with spherical tips measuring approximately 80 μm in diameter. The space between the counters and the sample could contain air, the same gas as the counters or vacuum. This allows a significant increase in the count rates by a factor approximately equal to the number of counters connected. It is shown that an energy resolution of 20% for 5.9 keV photons can be obtained, and a global counting rate of around 10(6)counts/s is achievable by the 15 Needle Anode Proportional Counters (NAPCs) operating in parallel mode, in our setup.
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