Accurate Adjusting the Lattice Strain of Triple-Cation and Mixed-Halide Perovskites for High-Performance Photodetector

Multicolor vision perception of flexible optoelectronic synapse with high sensitivity for skin sunburn warning

The development of flexible synaptic devices with multicolor signal response is important to exploit advanced artificial visual perception systems. The Sn vacancy-dominant memory and narrow gap characteristics of PEA2SnI4 make it suitable as a functional layer in ultraviolet-visible (UV-Vis) light-stimulated synaptic devices. However, such device tends to have high dark current and poor sensitivity, which is not conducive to subsequent information processing. Here, we proposed a self-powered flexible optoelectronic synapse based on PEA2SnI4 films. By introducing the electron transport layer (ETL), the dark current of the device is decreased by 5 orders of magnitude as compared to the Au/PEA2SnI4/ITO device, and the sensitivity is increased from 10.3% to 99.2% at 1.25 mW cm-2 light illumination (520 nm), indicating the vital role of the introduced ETL in promoting the separation of excitons in the interface and inhibiting the free carrier transfer. On this basis, the optoelectronic synaptic functions with integrated sensing, recognition, and memory features were realized. The array device exhibits UV-Vis light sensitivity and tunable synaptic plasticity, enabling its application for multicolor visual sensing and skin sunburn warning. This work provides an effective strategy for fabricating multicolor intelligent sensors and artificial vision systems, which facilitate the practical application of artificial optoelectronic synapses.

Dimensional and Optoelectronic Tuning of Lead-free Perovskite Cs3 Bi2 I9-n Brn Single Crystals for Enhanced Hard X-ray Detection

Inorganic Bi-based perovskites have shown great potential in X-ray detection for their large absorption to X-rays, diverse low-dimensional structures, and eco-friendliness without toxic metals. However, they suffer from poor carrier transport properties compared to Pb-based perovskites. Here, we propose a mixed-halogen strategy to tune the structural dimensions and optoelectronic properties of Cs3 Bi2 I9-n Brn (0≤n≤9). Ten centimeter-sized single crystals are successfully grown by the Bridgman technique. Upon doping bromine to zero-dimensional Cs3 Bi2 I9 , the crystal transforms into a two-dimensional structure as the bromine content reaches Cs3 Bi2 I8 Br. Correspondingly, the optoelectronic properties are adjusted. Among these crystals, Cs3 Bi2 I8 Br exhibits negligible ion migration, moderate resistivity, and the best carrier transport capability. The sensitivities in 100 keV hard X-ray detection are 1.33×104 and 1.74×104  μC Gyair -1  cm-2 at room temperature and 75 °C, respectively, which are the highest among all reported bismuth perovskites. Moreover, the lowest detection limit of 28.6 nGyair  s-1 and ultralow dark current drift of 9.12×10-9  nA cm-1  s-1  V-1 are obtained owing to the high ionic activation energy. Our work demonstrates that Br incorporation is an effective strategy to enhance the X-ray detection performance by tuning the dimensional and optoelectronic properties.

Mixed-Cation Halide Perovskite Doped with Rb+ for Highly Efficient Photodetector

Photodetectors are widely employed as fundamental devices in optical communication, automatic control, image sensors, night vision, missile guidance, and many other industrial or military fields. Mixed-cation perovskites have emerged as promising optoelectronic materials for application in photodetectors due to their superior compositional flexibility and photovoltaic performance. However, their application involves obstacles such as phase segregation and poor-quality crystallization, which introduce defects in perovskite films and adversely affect devices' optoelectronic performance. The application prospects of mixed-cation perovskite technology are significantly constrained by these challenges. Therefore, it is necessary to investigate strategies that combine crystallinity control and defect passivation to obtain high-quality thin films. In this study, we incorporated different Rb⁺ ratios in triple-cation (CsMAFA) perovskite precursor solutions and studied their effects on crystal growth. Our results show that a small amount of Rb⁺ was enough to induce the crystallization of the α-FAPbI₃ phase and suppress the formation of the yellow non-photoactive phase; the grain size increased, and the product of the carrier mobility and the lifetime (μτ) improved. As a result, the fabricated photodetector exhibited a broad photo-response region, from ultraviolet to near-infrared, with maximum responsivity (R) up to 11.8 mA W^-1 and excellent detectivity (D*) values up to 5.33 × 10¹¹ Jones. This work provides a feasible strategy to improve photodetectors' performance via additive engineering.

Revealing the effect of substitutional cation doping in the A-site of nanoscale APbI3 perovskite layers for enhanced retention and endurance in optoelectronic resistive switching for non-volatile bipolar memory devices

The effect of substitutional cation doping in the A-site of the nanoscale APbI₃ perovskite layer has been systematically investigated to achieve improvements in the charge-carrier dynamics and endurance of non-volatile bipolar (NVB) memory devices. We successfully adopted an energy-efficient, ultra-fast microwave-assisted solvothermal (MW-ST) synthesis route to prepare a sequence of APbI₃ (A = MA⁺, FA⁺, MAFA⁺, CsMA⁺ and CsMAFA⁺) perovskite powders with morphological transitions from cube-like polyhedrons to mixed polyhedrons and rods within 10 minutes at 120 °C without requiring any inert-gas atmosphere under high-humid ambient conditions. As-prepared APbI₃ powders were dissolved in DMSO:DMF, followed by the fabrication of a thin film via spin-coating. Upon annealing at 120 °C, the nanoscale self-assembled thin-film layer was formed. We observed that devices with the inorganic Cs⁺ cation with organic cations, (CsMAPI and CsMAFAPI) device showed improved endurance (3500 and 5000 cycles, respectively) and outstanding retention (60 000 s) owing to effective charge-carrier dynamics, compared to organic cation-based MAPI, FAPI and MAFAPI (1800, 1200 and 1300 cycles, respectively). Significantly, various cation-doped APbI₃-powders obtained via the MW-ST method remained to be stable for up to 5-months under high-humid conditions. Thus, enhanced optoelectronic-memory performance studies could provide an opportunity for next-generation nanoscale ORSNVB-memory devices for artificial intelligence (AI) and Internet of Things (IoT) applications.

High-order harmonics generation in nanosecond-pulses-induced plasma containing Ni-doped CsPbBr3perovskite nanocrystals using chirp-free and chirped femtosecond pulses

We demonstrate high-order harmonic generation in Ni-doped CsPbBr₃perovskite nanocrystals ablated by nanosecond pulses using chirp-free 35 fs, and chirped 135 fs pulses in the case of single-color pump (800 nm) and a two-color pump (800 and 400 nm). We analyzed the spectral shift, cut-off, and intensity distribution of harmonics in the case of chirped drving pulses compared to chirp-free pulses. It is shown that the presence of Ni dopants and CsPbBr₃plasma components improves the harmonics emission. Also, we measured the third-order nonlinear optical (NLO) properties of these nanocrystals using 800 nm, 60 fs, 1 kHz pulses. The variations of measured NLO parameters of CsPbBr₃perovskite nanocrystals containing different concentrations of nickel correlate with variations of generated high-order harmonics from laser induced plasmas of studied nanocrystals in terms of harmonics intensity, cut-off, and spectral shift (in case of chirped driving pulses). The spectral shift of the harmonics generated from the Ni-doped CsPbBr₃perovskite nanocrystals can be used to form tunable extreme ultraviolet sources.